TWI460780B - Grinding and dicing method of wafer and production line apparatus thereof - Google Patents

Description

Method for grinding and cutting wafer and its production line machine

The present invention relates to a semiconductor process, and more particularly to a wafer polishing process.

As technology advances, integrated circuit (IC) components have been widely used in our daily lives. In general, the production of integrated circuits is mainly divided into three stages: the manufacture of semiconductor wafers, the fabrication of integrated circuits, and the packaging of integrated circuits.

Further, after the integrated circuit is fabricated on the semiconductor wafer, the semiconductor wafer is diced to form a plurality of chips. Generally, the above-mentioned cutting process usually attaches a grinding tape to the front side of the wafer and polishes the back side of the wafer to reduce the thickness of the wafer. Then, remove the abrasive patch. Next, a dicing tape is attached to the back surface of the wafer, and the front surface of the wafer is diced to form a plurality of wafers separated from each other.

In the current semiconductor industry, in addition to the above-mentioned conventional wafer dicing process, most of the wafers need to be processed in a higher order, such as a B-stage epoxy process and a wafer bonding pre-cut process (die attach). Film (DAF) precutting process) and so on. However, at present, a production line machine can only do one process. When the wafer needs to be processed in a higher order, the polished and uncut wafer must be moved to another production line machine. Accordingly, wafers having a thickness of 200 to 300 micrometers and having a hard and brittle material property are likely to be damaged during handling. In addition, different processes in different production line machines will not only increase the process cycle, but also increase the cost of manufacturing and working hours.

In view of the above, the present invention provides a method for grinding and cutting a wafer, which can integrate a general wafer cutting process, a die bonding process, and a wafer bonding pre-cut process into the same production line.

The invention provides a production line machine for grinding and cutting a wafer, which can simultaneously perform a general wafer cutting process, a die bonding curing process and a wafer bonding pre-cutting process.

The invention provides a method for grinding and cutting a wafer, which is suitable for performing on a production line machine for grinding and cutting a wafer. The method for grinding and cutting a wafer comprises the following steps: First, providing a wafer, wherein the wafer has a front side and a relative On the back side of the front side; then, placing the wafer on a carrier board and performing wafer alignment; attaching a polishing patch to the front side of the wafer; and subsequently grinding the back side of the wafer to achieve the wafer a predetermined thickness; then, selecting one of the following multiple operations to obtain a wafer to be cut: performing a die bonding operation, performing a wafer pasting pre-cut operation, or attaching a dicing patch to the wafer a backside; then, placing the wafer on a wafer carrier; tearing apart the abrasive patch attached to the front side of the wafer; and subsequently cutting the front side of the wafer to be cut to form a plurality of wafers separated from each other Finally, the cut wafer is taken out.

The invention further provides a production line machine for grinding and cutting a wafer, which is suitable for grinding and cutting a wafer, and the production line machine for grinding and cutting the wafer comprises a carrier plate suitable for carrying a wafer and performing wafer processing. Alignment operation; a polishing patch attaching unit adapted to attach a polishing patch to the front side of the wafer; a polishing unit adapted to polish the back side of the wafer to achieve a predetermined thickness of the wafer; Suitable for selecting one of the following multiple operations to obtain a wafer to be cut: performing a die bonding operation, performing a wafer pasting pre-cutting operation, or attaching a cutting chip to the back side of the wafer; a unit adapted to place the wafer on a wafer carrier; a tear film unit adapted to tear open the abrasive patch attached to the front side of the wafer; and a cutting unit adapted to cut the wafer to be cut The front side is formed to form a plurality of wafers separated from each other.

In an embodiment of the invention, the performing a die-hardening operation comprises the steps of: attaching a die-bonding material to the back surface of the wafer, wherein the die-bonding material is a B-stage curing adhesive material; and performing heat curing operation.

In an embodiment of the invention, the performing a wafer pasting pre-cutting operation comprises the steps of: attaching a die attach film to the back side of the wafer; and pre-cutting the back side of the wafer to form a plurality of surfaces on the back side of the wafer. cutting line.

In an embodiment of the invention, the step of selecting one of the following plurality of operations to obtain a wafer to be cut is performed by a control unit disposed on a line machine of the abrasive cutting wafer.

In one embodiment of the invention, the step of polishing the back side of the wafer is performed by a chemical mechanical polisher disposed on a line machine that polishes the diced wafer.

Based on the above, by the process integration, the method for grinding and cutting a wafer of the present invention can be performed in addition to the conventional wafer cutting process. A die bonding process and a wafer pasting pre-cut process are performed on a production line machine. Therefore, the process steps can be reduced to simplify the process, and a higher order process can be selected in the wafer grinding and cutting process. In addition, since different processes are integrated into the same production line machine, the thinned wafers can be transported to different production lines for different processes, so that wafer damage can be avoided.

The above described features and advantages of the present invention will be more apparent from the following description.

1 is a flow chart of a method of grinding a diced wafer according to an embodiment of the invention. 2 is a schematic diagram of a production line machine for grinding and cutting a wafer according to an embodiment of the invention. Referring to FIG. 1 and FIG. 2, the line machine 100 for grinding and cutting a wafer of the present invention is suitable for performing polishing and cutting operations on a wafer 110. The wafer 110 has an active surface and a back surface with respect to the front surface after manufacturing the integrated circuit by the semiconductor process. Generally, the back surface of the wafer 110 without the integrated circuit is subjected to a polishing process so that after the wafer 110 reaches a certain thickness, the wafer 110 is subjected to a dicing process to make a chip on the wafer 110. Separated from each other.

In this embodiment, first, on the production line machine 100 for grinding and cutting the wafer, a wafer 110 is provided (S110), and then the wafer 110 is carried to a carrier plate 120 and the wafer 110 is aligned (S120). ). The alignment operation can be performed by aligning the pre-made marks on the wafer 110 with the pre-made marks on the carrier 120, and the present invention does not impose any limitation. Next, a polishing patch is attached to the front surface of the wafer 110 by a polishing patch attaching unit 130 (S130). After attaching the abrasive patch, the wafer 110 is carried to a polishing unit 140, and the back surface of the wafer 110 is polished to make the wafer 110 reach a predetermined thickness (S140), wherein the wafer polishing process is configured by grinding and cutting. A chemical mechanical polishing (CMP) machine (not shown) of the wafer production line machine 100 is used for grinding.

In this embodiment, after the thickness of the wafer 110 reaches a predetermined standard, one of the following multiple operations can be selected by a control unit 150 to obtain a wafer to be cut (S150). The wafer processing operation that can be selected is a B-stage epoxy process (S152) by a die bonding curing unit 152, and a wafer bonding pre-cutting operation is performed by a wafer bonding pre-cutting unit 154. (die attach film (DAF) precutting process) (S154) or attaching a dicing patch to the back surface of the wafer 110 by a attaching unit 156 (S156). In the above wafer processing operation, in addition to the work of attaching a dicing patch to the back surface of the wafer, a higher-order viscous curing operation and a wafer bonding pre-cutting operation can be performed, and the above three operations can be performed simultaneously or One to carry on.

In this embodiment, the performing a die-hardening operation includes the following steps: first, attaching a die bonding material to the back surface of the wafer 110, wherein the die bonding material may be a B-stage curing adhesive material (B-stage) The epoxy coating material (S152a) is then subjected to a heat curing operation (S152b) to cure the die bonding material to form a film equivalent to a dicing patch to form a wafer to be diced.

In the embodiment, performing the wafer pasting pre-cutting operation includes the following steps: first, attaching a die attach film to the back surface of the wafer 110 (S154a), and then performing precutting. A back surface of the wafer 110 forms a plurality of dicing streets (S154b) on the back surface of the wafer 110 to form a wafer to be diced.

If the wafer 110 does not need to perform the higher-order die bonding operation and the wafer pasting pre-cutting operation, a cutting tape or blue tape is attached to the back surface of the wafer 110 to obtain a cutting tape to be cut. The wafer is taken to the next step.

Next, after the above steps are completed, the wafer 110 is placed on a wafer carrier 160 by a mounting unit 160 (S160). The wafer carrier 160 may be an annular frame made of a steel material, and the wafer 110 may be fixed to the inner ring. However, the present invention does not impose any limitation on the material and appearance of the wafer carrier. Next, the wafer carrier 160 holding the wafer 110 is moved to a tear film unit 170, and the abrasive patch attached to the front surface of the wafer 110 is torn off (S170). Finally, the wafer 110 exposing the front side is transferred to a cutting unit 180, and the front side of the wafer to be cut is cut to form a plurality of chips separated from each other (S180). After the cutting, the individual wafers are arranged in an orderly manner on the cutting patch, and the support of the wafer carrier 160 can avoid the chip wrinkles and the wafers collide with each other, and the wafer carrier 160 supports Hold the cutting patch for easy handling. Therefore, the cut wafer can be conveniently taken out (S190) to perform other processes such as wafer packaging, testing, and the like by a package unit 190.

In summary, the method for polishing and cutting a wafer of the present invention can be carried out on the same production line machine by the process integration, and the method of grinding and dicing the wafer can be performed on the same production line machine. Cutting process. Therefore, the process steps can be reduced to simplify the process, and a higher order process can be selected in the wafer grinding and cutting process. In addition, since different processes are integrated into the same production line machine, the thinned wafers can be transported to different production lines for different processes, so that wafer damage can be avoided, thereby reducing process cycle, manufacturing and man-hours. When the cost is equal, the space of the production line can be saved.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100. . . Grinding and cutting wafer production line machine

110. . . Wafer

120. . . Carrier board

130. . . Grinding patch attachment unit

140. . . Grinding unit

150. . . control unit

152. . . Clay curing unit

154. . . Wafer bonding pre-cutting unit

156. . . Attachment unit

160. . . Wafer carrier

170. . . Tear film unit

180. . . Cutting unit

190. . . Package unit

S110～S190. . . step

1 is a flow chart of a method of grinding a diced wafer according to an embodiment of the invention.

2 is a schematic diagram of a production line machine for grinding and cutting a wafer according to an embodiment of the invention.

S110～S190. . . step

Claims (10)

A method of grinding a dicing wafer, suitable for performing on a line machine for grinding a dicing wafer, the method of dicing a wafer comprising: providing a wafer, wherein the wafer has a front side and one of the front side a backside; placing the wafer on a carrier and performing alignment of the wafer; attaching a polishing patch to the front side of the wafer; grinding the back side of the wafer to achieve a predetermined thickness of the wafer Select one of the following multiple jobs to obtain a wafer to be cut: (a) perform a die bonding operation; (b) perform a wafer pasting pre-cut operation; (c) attach a cut patch to the a backside of the wafer; placing the wafer on a wafer carrier; tearing the abrasive patch attached to the front side of the wafer; cutting the front side of the wafer to be cut to form a plurality of separate wafers Wafers; and removing the cut wafers. The method of grinding and cutting a wafer according to claim 1, wherein the (a) performing a die bonding operation comprises: attaching a die bonding material to a back surface of the wafer, wherein the die bonding material is a B-stage curing adhesive material; and heat curing operation. The method of grinding and cutting a wafer according to claim 1, wherein the (b) performing a wafer pasting pre-cutting operation comprises: attaching a wafer adhesive film to a back surface of the wafer; and pre-cutting the wafer The back side forms a plurality of dicing streets on the back side of the wafer. The method of grinding a diced wafer according to claim 1, wherein the step of selecting one of the following plurality of operations to obtain a wafer to be diced is by a line machine disposed on the diced wafer One of the control units of the station makes a selection. The method of grinding and cutting a wafer according to claim 1, wherein the step of grinding the back surface of the wafer is performed by a chemical mechanical polishing machine disposed on a production line machine of the abrasive cutting wafer. . A production line machine for grinding and cutting a wafer, which is suitable for performing a grinding and cutting operation of a wafer, the wafer having a front surface and a back surface opposite to the front surface, the production line machine for grinding and cutting the wafer comprises: a bearing a plate adapted to carry a wafer and perform alignment operation of the wafer; a polishing patch attaching unit adapted to attach a polishing patch to a front surface of the wafer; and a polishing unit adapted to polish the crystal a back surface of the circle to bring the wafer to a predetermined thickness; a control unit adapted to select one of the following plurality of operations to obtain a wafer to be cut: (a) performing a die bonding operation; (b) Performing a wafer bonding pre-cut operation; (c) attaching a dicing patch to the back side of the wafer; a mounting unit adapted to place the wafer on a wafer carrier; a tear film unit adapted to The abrasive patch attached to the front side of the wafer is torn open; and a cutting unit adapted to cut the front side of the wafer to be cut to form a plurality of wafers separated from each other. The production line machine for grinding and cutting a wafer according to claim 6 of the patent application further comprises: a die bonding curing unit adapted to perform a die bonding operation; and a wafer bonding pre-cutting unit adapted to perform a wafer bonding. a pre-cutting operation; and an attaching unit adapted to attach a cutting patch to the back of the wafer. The production line machine for grinding and cutting a wafer according to claim 6, wherein the die bonding curing unit is more suitable for attaching a die bonding material to the back surface of the wafer, and then performing a heat curing operation, wherein The die-bonding material is a B-stage curing adhesive material. The production line machine for grinding and cutting a wafer according to claim 6, wherein the wafer pasting pre-cutting unit is more suitable for attaching a wafer adhesive film to the back surface of the wafer, and then pre-cutting the wafer. The back side forms a plurality of dicing streets on the back side of the wafer. The production line machine for grinding and cutting a wafer according to claim 6, wherein the grinding unit comprises a chemical mechanical polishing machine.