TWI456768B - 薄膜電晶體用閘絕緣膜形成劑 - Google Patents

薄膜電晶體用閘絕緣膜形成劑 Download PDF

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TWI456768B
TWI456768B TW097120278A TW97120278A TWI456768B TW I456768 B TWI456768 B TW I456768B TW 097120278 A TW097120278 A TW 097120278A TW 97120278 A TW97120278 A TW 97120278A TW I456768 B TWI456768 B TW I456768B
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thin film
film transistor
gate insulating
chemical formula
insulating film
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TW200913277A (en
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Shinichi Maeda
Takahiro Kishioka
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Nissan Chemical Ind Ltd
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Claims (9)

  1. 一種使用薄膜電晶體用閘絕緣膜形成劑所形成之具有閘絕緣膜之薄膜電晶體，其特徵為含有包含具備將具有含羥烷基之基來作為氮原子上之取代基之三嗪三酮環之重複單位之寡聚物化合物或聚合物化合物。
  2. 如申請專利範圍第1項所記載之使用薄膜電晶體用閘絕緣膜形成劑所形成之具有閘絕緣膜之薄膜電晶體，其中，還包含溶劑。
  3. 如申請專利範圍第1或2項所記載之使用薄膜電晶體用閘絕緣膜形成劑所形成之具有閘絕緣膜之薄膜電晶體，其中，前述之寡聚物化合物或聚合物化合物係包含具有三嗪三酮環之氮原子透過羥基亞烷基而結合於其他之三嗪三酮環之氮原子之構造之重複單位之化合物。
  4. 如申請專利範圍第1項所記載之使用薄膜電晶體用閘絕緣膜形成劑所形成之具有閘絕緣膜之薄膜電晶體，其中，前述之寡聚物化合物或聚合物化合物係包含以下列之化學式(1)所表示之重複單位之化合物； (在化學式中，R1 、R2 係分別獨立地表示碳原子數1至6之烷基、碳原子數3至6之鏈烯基、三氟甲基或五氟 乙基，A1 、A2 及A3 係分別獨立地表示氫原子、甲基或乙基)。
  5. 如申請專利範圍第1項所記載之使用薄膜電晶體用閘絕緣膜形成劑所形成之具有閘絕緣膜之薄膜電晶體，其中，前述之寡聚物化合物或聚合物化合物係包含以下列之化學式(2)和化學式(3)所表示之兩化合物之反應生成物； (在化學式中，R1 、R2 、A1 、A2 及A3 係分別同義於前述化學式(1)之定義)。
  6. 如申請專利範圍第4項所記載之使用薄膜電晶體用閘絕緣膜形成劑所形成之具有閘絕緣膜之薄膜電晶體，其中，以前述化學式(1)所表示之重複單位之末端係以下列之化學式(4)或化學式(5)所表示之基而進行密封； (在化學式中，R1 、R2 、A1 、A2 及A3 係分別同義於前述化學式(1)之定義)。
  7. 如申請專利範圍第5項所記載之使用薄膜電晶體用閘絕緣膜形成劑所形成之具有閘絕緣膜之薄膜電晶體，其中，以下列之化學式(6)或化學式(7)所表示之化合物，來作為末端密封劑，與前述以化學式(2)及化學式(3)所表示之兩化合物之反應生成物進行反應而成； (在化學式中，R1 、R2 、A1 、A2 及A3 係分別同義於前述化學式(1)之定義)。
  8. 一種薄膜電晶體用閘絕緣膜之製造方法，其特徵為：包含在如申請專利範圍第1至7項中任一項所記載之薄膜電晶體用閘絕緣膜形成劑塗佈於基板後，於180℃以下之溫度，進行燒成之步驟。
  9. 一種薄膜電晶體之製造方法，其特徵為：包含在如申請專利範圍第1至7項中任一項所記載之薄膜電晶體用閘絕緣膜形成劑塗佈於基板後，於180℃以下之溫度，進行燒成而得到薄膜電晶體用閘絕緣膜之步驟；以及，藉由有機半導體之塗佈而形成薄膜電晶體之半導體層之步驟。
TW097120278A 2007-05-30 2008-05-30 薄膜電晶體用閘絕緣膜形成劑 TWI456768B (zh)

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US9245542B1 (en) * 2015-07-28 2016-01-26 Seagate Technology Llc Media cleaning with self-assembled monolayer material
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