TWI456747B - 背照式影像偵測元件與其形成方法 - Google Patents

背照式影像偵測元件與其形成方法 Download PDF

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Publication number
TWI456747B
TWI456747B TW100106616A TW100106616A TWI456747B TW I456747 B TWI456747 B TW I456747B TW 100106616 A TW100106616 A TW 100106616A TW 100106616 A TW100106616 A TW 100106616A TW I456747 B TWI456747 B TW I456747B
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Taiwan
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layer
substrate
illuminated image
image detecting
reflective layer
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TW100106616A
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TW201208048A (en
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Chih Hui Huang
Cheng Yuan Tsai
Yeur Luen Tu
Chia Shiung Tsai
Dun Nian Yaung
Jen Cheng Liu
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Taiwan Semiconductor Mfg
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Claims (8)

  1. 一種背照式影像偵測元件，包括：一基板，具有正面與背面；一光感測區位於該基板正面中；以及一抗反射層位於該基板背面上；其中該抗反射層之折射率大於或等於2.2，且該抗反射層對小於700nm之光波長的消光係數小於或等於0.05，其中該抗反射層為碳化矽層，且該碳化矽層中矽與碳的比例介於20%至30%之間。
  2. 如申請專利範圍第1項所述之背照式影像偵測元件，其中該抗反射層對大於550nm之光波長的消光係數為0，且該抗反射層之折射率大於或等於2.4。
  3. 如申請專利範圍第1項所述之背照式影像偵測元件，其中該抗反射層不具有矽氧鍵與矽氮鍵，且該抗反射層之厚度介於100Å至600Å之間。
  4. 一種背照式影像偵測元件，包括：一基板，具有正面與背面；一光感測區位於該基板正面中；以及一碳化矽抗反射層位於該基板背面上，其中該碳化矽層中矽與碳的比例介於20%至30%之間。
  5. 如申請專利範圍第4項所述之背照式影像偵測元件，其中該碳化矽抗反射層對介於450nm至700nm之光波長的折射率大於或等於2.4。
  6. 如申請專利範圍第4項所述之背照式影像偵測元件，其中一介於450nm至550nm之光波長對該碳化矽抗 反射層具有高穿透率。
  7. 如申請專利範圍第4項所述之背照式影像偵測元件，其中該碳化矽抗反射層的消光係數小於或等於0.05。
  8. 一種背照式影像偵測元件的形成方法，包括：提供一基板，且該基板具有正面及背面；形成一光感測區於該基板正面中；以及形成一抗反射層於該基板背面上；其中該抗反射層之折射率大於或等於2.2，且該抗反射層對小於700nm之光波長的消光係數小於或等於0.05，其中形成該抗反射層於該基板背面上之步驟包括以電漿增強式化學氣相沉積製程形成一碳化矽抗反射層，使該碳化矽抗反射層中矽與碳之比例介於20%至30%之間，且該電漿增強式化學氣相沉積製程採用氦氣與四甲基矽烷之混合氣體。
TW100106616A 2010-08-13 2011-03-01 背照式影像偵測元件與其形成方法 TWI456747B (zh)

Applications Claiming Priority (2)

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US37350010P 2010-08-13 2010-08-13
US12/890,913 US8377733B2 (en) 2010-08-13 2010-09-27 Antireflective layer for backside illuminated image sensor and method of manufacturing same

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TWI456747B true TWI456747B (zh) 2014-10-11

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US (1) US8377733B2 (zh)
KR (1) KR20120024361A (zh)
CN (1) CN102376724B (zh)
DE (1) DE102011014010A1 (zh)
TW (1) TWI456747B (zh)

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TWI777172B (zh) * 2019-06-21 2022-09-11 台灣積體電路製造股份有限公司 影像感測器以及形成影像感測器的方法

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CN103857096A (zh) * 2012-11-28 2014-06-11 胡能忠 最佳视觉照明装置及方法
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US8377733B2 (en) 2013-02-19
TW201208048A (en) 2012-02-16
US20120038015A1 (en) 2012-02-16
CN102376724B (zh) 2013-11-20
KR20120024361A (ko) 2012-03-14
CN102376724A (zh) 2012-03-14
DE102011014010A1 (de) 2012-02-16

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