TWI382547B - 薄膜型太陽能電池及其製造方法 - Google Patents
薄膜型太陽能電池及其製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 40
- 239000012780 transparent material Substances 0.000 claims description 20
- 238000002834 transmittance Methods 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 40
- 239000011787 zinc oxide Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- OMSFUHVZHUZHAW-UHFFFAOYSA-N [Ag].[Mo] Chemical compound [Ag].[Mo] OMSFUHVZHUZHAW-UHFFFAOYSA-N 0.000 description 2
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- -1 silver aluminum Chemical compound 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000575 Ir alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- BEHSQFZSTNVEGP-UHFFFAOYSA-N [Ag].[Ir] Chemical compound [Ag].[Ir] BEHSQFZSTNVEGP-UHFFFAOYSA-N 0.000 description 1
- RQCJDSANJOCRMV-UHFFFAOYSA-N [Mn].[Ag] Chemical compound [Mn].[Ag] RQCJDSANJOCRMV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/02—Details
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Description
本發明係關於一種太陽能電池,尤其係關於一種薄膜型太陽能電池。
通常,具有半導體特性之太陽能電池可將光能轉化為電能。
下面將對習知太陽能電池之結構及原理進行簡單描述。其中,太陽能電池具有PN結,其中正極型半導體(P型半導體)可與負極型半導體(N型半導體)形成接面。當太陽光線射入具有PN接面結構之太陽能電池上時,太陽光線之能量可於此半導體中產生電洞(+)與電子(-)。同時,透過PN接面中所形成之電場的作用,電洞(+)可向P型半導體漂移,而電子(-)可向N型半導體漂移,進而隨著電位的形成便可產生電能。
大體上,太陽能電池可分為:晶圓型太陽能電池與薄膜型太陽能電池。
其中,晶圓型太陽能電池係透過半導體材料,如矽所製成之晶圓形成。而薄膜型太陽能電池係透過於玻璃基板上形成薄膜型半導體製成。
從效能的角度上看,晶圓型太陽能電池優於薄膜型太陽能電池。但是,對於晶圓型太陽能電池而言,由於在製程中存在著困難,所以這種晶圓型太陽能電池無法具有很薄的厚度。此外,由於這種晶圓型太陽能電池使用了價格昂貴的半導體基板,因此增大了製造成本。
盡管薄膜型太陽能電池在效能上不及晶圓型太陽能電池,但這種薄膜型太陽能電池也具有優點,如可具有較薄的外形,以及使用價格低廉的材料。因此,薄膜型太陽能電池更適於進行大量生產。
其中,薄膜型太陽能電池之製造方法包含有下列步驟:於玻璃基板上形成前置電極;於此前置電極上形成半導體層;以及於此半導體層上形成後置電極。
此處,將結合「第1圖」對習知的薄膜型太陽能電池進行描述。
其中,「第1圖」為習知的薄膜型太陽能電池之剖面圖。
如「第1圖」所示,習知的薄膜型太陽能電池,係包含:基板10;前置電極30,係位於基板10上;半導體層40,係位於前置電極30上;以及後置電極60,係位於半導體層40上。
其中,前置電極30可形成此薄膜型太陽能電池之正極。同時,此前置電極30係由透明導電材料製成,藉以使此前置電極30作為太陽光線入射面。
其中,半導體層40係由半導體材料,如矽所製成。此處,可依次沈積P型矽層(正極層)、I型矽層(本質層)及N型矽層(負極層),藉以形成正本負結構。
此處,後置電極60可作為這種薄膜型太陽能電池的負極(一)。其中,此後置電極60係由導電金屬材料,如:鋁製成。
但是,習知的薄膜型太陽能電池具有下列缺點。
總體而言,習知的薄膜型太陽能電池可應用玻璃製成的基板10。但是,若製造這種具有由玻璃形成之基板10的薄膜型太陽能電池,則射入此基板10之太陽光線的方向不會與透過基板10進入前置電極30之太陽光線的方向之間不會產生太大差異。因此,由於在太陽光線之收集過程中受到限制,因此難以提高太陽能電池之效能。
同時,這種透明導電材料所製成的前置電極30與基板10之間的結合強度較低。
鑒於以上的問題,本發明的主要目的在於提供一種薄膜型太陽能電池及其製造方法,藉以透過提高前置電極與基板間之結合強度,改善太陽能電池之能效,並透過較高的太陽光線吸收效率提高太陽光線之透射率。
為了獲得本發明之優點且依照本發明之目的,現對本發明作具體化和概括性地描述,本發明之一方面提供了一種薄膜型太陽能電池,這種薄膜型太陽能電池係具有依次設置於基板上的前置電極、半導體層及後置電極,同時這種薄膜型太陽能電池還包含有緩衝層,此緩衝層係位於基板與前置電極之間,藉以提高基板與前置電極間的結合強度,並可提高透過基板射入之太陽光線的透射率。
此時,可用透明材料形成緩衝層,其中這種透明材料之折射率大於基板之折射率。
同時,可使用於形成此緩衝層之透明材料的折射率介於1.9至2.3之間。
此處,緩衝層之厚度係介於1000至3000之間。
其中,形成此緩衝層之材料係為從氧化鈦、氮化矽或氧化矽中所選取之組份。
而此緩衝層係由複數個子層組成。
此外,這種薄膜型太陽能電池還包含:透明導電層,係位於半導體層與後置電極之間。
本發明之另一方面提供了一種薄膜型太陽能電池的製造方法,係包含:於基本上形成緩衝層;於此緩衝層上形成前置電極;於此前置電極上形成半導體層;以及於此半導體層上形成後置電極。
同時,可用透明材料形成此緩衝層,其中此透明材料之折射率高於基板之折射率。
此處,用於形成此緩衝層之透明材料的折射率係位於1.9至2.3之間。
此處,緩衝層之厚度係介於1000至3000之間。
其中,形成此緩衝層之材料係為從氧化鈦、氮化矽或氧化矽中所選取之組份。
而此緩衝層係由複數個子層組成。
此外,這種薄膜型太陽能電池的製造方法還包含:於半導體層與後置電極之間形成透明導電層。
因此,本發明實施例之薄膜型太陽能電池及其製造方法具有下列優點:由於在基板與前置電極之間形成了緩衝層,所以可增強基板與前置電極間之結合強度,並提高了透過基板射入的太陽光線之透射率,進而提高了太陽能電池之效能。
由於採用折射率介於1.9至2.3之間的透明材料形成緩衝層,所以可透過最大化地減小太陽光線之折射率而射太陽光線之透射率達到最大化。
同時,可使此緩衝層之厚度介於1000至3000之間,藉以使太陽光線之透射率達到最大化,並最大化地減小太陽光線之折射率。
下面,將結合附圖對本發明之實施例進行詳細描述。其中,在這些圖式部分中所使用的相同的參考標號代表相同或同類部件。
以下,將結合附圖對本發明實施例之薄膜型太陽能電池及其製造方法進行描述。
「第2圖」為本發明一實施例之薄膜型太陽能電池的剖面圖。
如「第2圖」所示,本發明實施例之薄膜型太陽能電池,係包含:基板100;緩衝層200;前置電極300;半導體層400;透明導電層500;以及後置電極600。
此時,可用玻璃或透明塑料形成此基板100。
可在基板100與前置電極300之間形成緩衝層200,藉以增強二者之間的結合強度,同時,此緩衝層200可提供透過基板100之太陽光線之透射率。
其中,最後使用於形成此緩衝層200之透明材料的折射率大於基板100的折射率。而當形成高折射率的緩衝層200時,透過此緩衝層200之太陽光線的路徑可發生不同的變化,因此可提高薄膜型太陽能電池之內部所傳輸的太陽光線之總量。特別是,最後使用於形成緩衝層200之透明材料之折射率保持在1.9至2.3之間,藉以在此範圍內最大化地減小太陽能之反射作用。
為了使太陽光線之透射率達到最大化,使太陽光線之路徑發生不同的變化是十分重要的,藉以防止太陽光線因反射產生損失。因此,折射率之上述範圍可最大化地減小太陽光線的反射。
此處,最好用折射率在1.9至2.3之間的透明材料,如:氧化鈦(TiO2)、氮化矽(SiN)或氧化矽(SiO2)形成此緩衝層200,而此緩衝層200可提高太陽光線之透射率並可提高基板100與前置電極300之間的結合強度。
同時,緩衝層200之厚度介於1000Å至3000Å之間。為了最大化地減小太陽光線的反射,可使緩衝層200之厚度至少為1000Å。若此緩衝層200之厚度大於3000Å,則可降低太陽光線之透射率。
其中,此緩衝層200係由具有不同折射率之複數個子層組成。
同時,前置電極300可由透明導電材料,例如:氧化鋅、氧化鋅:硼、氧化鋅:鋁、氧化鋅:氫、二氧化錫、二氧化錫:氟或氧化銦錫(ITO,Indium Tin Oxide)形成。
而在用於形成前置電極300之上述透明導電材料中,但即使氧化鋅:硼具有較高的膜特性,由於氧化鋅:硼與玻璃間具有較低的結合強度,氧化鋅:硼也不適用於大量地生產太陽能電池。
但是,由於本發明實施例之薄膜型太陽能電池還包含有緩衝層200,藉以提高基板100與3前置電極00間之結合強度,藉以使用於形成前置電極300之氧化鋅:硼具有較高的膜特性,進而使這種太陽能電池具有較高的效能。
若由氧化鋅:硼形成此前置電極300,則最好以氧化鈦形成緩衝層200,進而提高基板100與前端電極前置電極300間之結合強度。
此外,還可對前置電極300進行紋理化製程。透過進行紋理
化製程,可使材料層之表面成為不平坦的表面,換言之,可透過應用光刻法的蝕刻製程,應用化學溶液之非等向性蝕刻製程或機械雕繪製程形成這種紋理化結構。由於可對前置電極300進行紋理化製程,所以太陽光線之分散可降低太陽能電池上之太陽光線反射率,同時可提高太陽能電池之太陽光線吸收率,進而可提高太陽能電池之效能。
其中,可用矽基半導體材料形成半導體層400。同時,可依次沈積P型半導體層、I型半導體層基N型半導體層,藉以形成正本負結構,進而形成半導體層400。而在具有正本負結構之半導體層400中,透過形成之電場的P型半導體層與N型半導體層可使I型半導體層內產生耗盡作用。進而,此電場可使由太陽光線所產生的電子與電洞發生漂移,同時可透過N型半導體層與P型半導體層分別收集發生漂移的電子與電洞。
此處,若形成具有正本負結構之半導體層400,則須在前置電極300上沈積P型半導體層,並且最好於此P型形成I型半導體層與N型半導體層。同時,由於電洞的遷移率小於電子的遷移率,所以為了透過入射光線使收集效率達到最大化,可於太陽光線入射面附近沈積P型半導體層。
同時,可透過如:氧化鋅、氧化鋅:硼、氧化鋅:鋁或銀等透明導電材料形成透明導電層500。而此處也可省略透明導電層500。但是,最好配設此透明導電層500,藉以提高太陽能電池之
能效。換言之,當形成此透明導電層500時,使太陽光線穿過半導體層400,而後再穿過透明導電層500。在這種狀況中,可使穿過此透明導電層500之太陽光線以不同角度進行擴散。因此,在使太陽光線在後置電極600上發生反射後,可增大半導體層400上的太陽光線之入射率。
而後置電極600可透過金屬材料形成如:銀、鋁、銀鉬合金、銀鎳合金或銀銅合金。
〈薄膜型太陽能電池之製造方法〉
「第3A圖」至「第3E圖」為用於對本發明實施例之薄膜型太陽能電池之製造方法進行說明的剖面圖,其中不再對與上述實施例之相同部件進行詳盡地描述。
首先,如「第3A圖」所示,可於基板100上形成緩衝層200。其中,最好使由透明材料形成的緩衝層200之折射率大於基板100之折射率。具體而言,可用折射率為1.9至2.3的透明材料形成此緩衝層200,進而可最大化地降低太陽光線之反射,進而提高太陽光線之透射率。
其中,可用氧化銻、氮化矽或氧化矽形成此緩衝層200。
同時,最好使緩衝層200之厚度介於1000Å至3000Å之間。此處,可用具有不同折射率之複數個子層組成此緩衝層200。
接下來,如「第3B圖」所示,可於此緩衝層200上形成前置電極300。
其中,此前置電極300可透過對透明導電材料,如:氧化鋅、氧化鋅:硼、氧化鋅:鋁、氧化鋅:氫、二氧化錫、二氧化錫:氟或氧化銦錫(ITO,Indium Tin Oxide)進行濺鍍處理或金屬有機化學氣相沈積(MOCVD,Metal Organic Chemical Vapor Deposition)處理而形成。
為了最大化地最大化地對太陽光線進行吸收,可透過紋理化處理使此前置電極300具有不平整的表面。
如「第3C圖」所示,可於此前置電極300上形成半導體層400。
此處,半導體層400可具有正本負結構,而在這種正本負結構中可透過電漿化學氣相沈積發依次P型半導體層、I型半導體層以及N型半導體層。
如「第3D圖」所示,可於半導體層400上形成透明導電層500。
其中,透過對透明導電材料如:氧化鋅、氧化鋅:硼、氧化鋅:鋁、氧化鋅:氫或銀進行濺鍍或金屬有機化學氣相沈積處理,可形成透明導電層500。同時,也可不形成此透明導電層500。
如「第3E圖」所示,可於此透明導電層500上形成後置電極600。
其中,還可透過網板印刷法、噴墨印刷法、凹版印刷法或微觸印刷法用金屬,如:銀、鋁、銀鋁合金、銀鎂合金、銀錳合金、銀銻合金、銀鋅合金、銀鉬合金、銀鎳合金、銀銅合金或銀一鋁一鋅合金形成此後置電極600。
在使用網板印刷法之狀況中,可透過噴嘴將材料噴射至預定物體上。而噴墨印刷法可透過噴墨接觸將材料噴塗至預定物體上,藉以在此預定物體上形成預定型樣。在使用凹版印刷法之狀況中,可將材料塗覆於凹板上,進而可將所塗覆之材料轉移之預定物體上,藉以於預定物體上形成預定型樣。而微觸印刷法可透過預定模具在預定物體上形成材料之預定型樣。
雖然本發明以前述之較佳實施例揭露如上,然其並非用以限定本發明,任何熟習相像技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。
10...基板
30...前置電極
40...半導體層
60...後置電極
100...基板
200...緩衝層
300...前置電極
400...半導體層
500...透明導電層
600...後置電極
第1圖為習知的薄膜型太陽能電池之剖面圖;
第2圖為本發明一實施例之薄膜型太陽能電池的剖面圖;以及
第3A圖至第3E圖為用於對本發明一實施例之薄膜型太陽能電池的製造方法進行說明的剖面圖。
100...基板
200...緩衝層
300...前置電極
400...半導體層
500...透明導電層
600...後置電極
Claims (14)
- 一種薄膜型太陽能電池,係配設有依次沈積於一基板上的一前端電極、一半導體層及一後端電極,該薄膜型太陽能電池係包含:一緩衝層,係位於該基板與該前端電極之間,藉以提高該基板與該前端電極間之結合強度,並提高透過該基板入射之太陽光線的透射率。
- 如請求項1所述之薄膜型太陽能電池,其中該緩衝層係由一透明材料製成,且該透明材料之折射率高於該基板之折射率。
- 如請求項1所述之薄膜型太陽能電池,其中該緩衝層係由一透明材料製成,且該透明材料之折射率介於1.9至2.3之間。
- 如請求項1所述之薄膜型太陽能電池,其中該緩衝層之厚度介於1000至3000之間。
- 如請求項1所述之薄膜型太陽能電池,其中該緩衝層係由從氧化鈦、氮化矽或氧化矽所組成組份中選取之一材料製成。
- 如請求項1所述之薄膜型太陽能電池,其中該緩衝層係由複數個子層組成。
- 如請求項1所述之薄膜型太陽能電池,還包含一透明導電層,該透明導電層係位於該半導體層與該後置電極之間。
- 一種薄膜型太陽能電池的製造方法,係包含:於一基板上形成一緩衝層;於該緩衝層上形成一前置電極;於該前置電極上形成一半導體層;以及於該半導體層上形成一後置電極。
- 如請求項8所述之薄膜型太陽能電池的製造方法,其中該緩衝層係由一透明材料製成,且該透明材料之折射率高於該基板之折射率。
- 如請求項8所述之薄膜型太陽能電池的製造方法,其中該緩衝層係由一透明材料製成,且該透明材料之折射率介於1.9至2.3之間。
- 如請求項8所述之薄膜型太陽能電池的製造方法,其中該緩衝層之厚度介於1000至3000之間。
- 如請求項8所述之薄膜型太陽能電池的製造方法,其中該緩衝層係由從氧化鈦、氮化矽或氧化矽所組成組份中選取之一材料製成。
- 如請求項8所述之薄膜型太陽能電池的製造方法,其中該緩衝層係由複數個子層組成。
- 如請求項8所述之薄膜型太陽能電池的製造方法,還包含:於該半導體層與該後置電極之間形成一透明導電層。
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