TWI456662B - 修補氧化物半導體層之缺陷的方法 - Google Patents

修補氧化物半導體層之缺陷的方法 Download PDF

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Publication number
TWI456662B
TWI456662B TW100134784A TW100134784A TWI456662B TW I456662 B TWI456662 B TW I456662B TW 100134784 A TW100134784 A TW 100134784A TW 100134784 A TW100134784 A TW 100134784A TW I456662 B TWI456662 B TW I456662B
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TW
Taiwan
Prior art keywords
semiconductor layer
oxide semiconductor
repairing
organic gas
defect
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TW100134784A
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English (en)
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TW201314779A (zh
Inventor
Yih Chyun Kao
Chen Yuan Tu
Chun Nan Lin
shu feng Wu
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Au Optronics Corp
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Priority to TW100134784A priority Critical patent/TWI456662B/zh
Priority to CN201110359413.5A priority patent/CN102354657B/zh
Publication of TW201314779A publication Critical patent/TW201314779A/zh
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Publication of TWI456662B publication Critical patent/TWI456662B/zh

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  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Claims (8)

  1. 一種修補氧化物半導體層之缺陷的方法，包括：提供一基板，並於該基板上形成一氧化物半導體層；將該基板載入一反應室內，並於該反應室內通入至少一有機氣體，以使該反應室內形成一有機氣體環境；以及在該有機氣體環境下對該氧化物半導體層進行一退火製程，以修補該氧化物半導體層之缺陷。
  2. 如請求項1所述之修補氧化物半導體層之缺陷的方法，其中該退火製程之一製程溫度大體上介於200℃至400℃之間。
  3. 如請求項1所述之修補氧化物半導體層之缺陷的方法，其中該退火製程係於常壓下進行。
  4. 如請求項1所述之修補氧化物半導體層之缺陷的方法，其中該退火製程之一製程時間大體上係介於1小時至2小時之間。
  5. 如請求項1所述之修補氧化物半導體層之缺陷的方法，其中該有機氣體包括丙二醇甲醚(Propylene Glycol Monomethyl Ether,PGME)之蒸氣、丙二醇甲醚醋酸酯(Propylene Glycol Monomethyl Ether Acetate,PGMEA)之蒸氣或N-甲基吡咯酮(N-methyl pyrrolidinone,NMP)之蒸氣。
  6. 如請求項1所述之修補氧化物半導體層之缺陷的方法，更包括利用一載流氣體將該有機氣體通入該反應室內以形成該有機氣體環境。
  7. 如請求項1所述之修補氧化物半導體層之缺陷的方法，更包括直接於該反應室內通入該有機氣體而形成該有機氣體環境。
  8. 如請求項1所述之修補氧化物半導體層之缺陷的方法，其中該氧化物半導體層包括一銦鎵鋅氧化物(IGZO)半導體層。
TW100134784A 2011-09-27 2011-09-27 修補氧化物半導體層之缺陷的方法 TWI456662B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW100134784A TWI456662B (zh) 2011-09-27 2011-09-27 修補氧化物半導體層之缺陷的方法
CN201110359413.5A CN102354657B (zh) 2011-09-27 2011-11-14 修补氧化物半导体层的缺陷的方法

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TW100134784A TWI456662B (zh) 2011-09-27 2011-09-27 修補氧化物半導體層之缺陷的方法

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TW201314779A TW201314779A (zh) 2013-04-01
TWI456662B true TWI456662B (zh) 2014-10-11

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CN109722632A (zh) * 2017-10-31 2019-05-07 陕西南水汽车配件制造有限公司 一种铝合金控制臂锻件表面粗晶环控制方法

Citations (1)

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Publication number Priority date Publication date Assignee Title
US20090230821A1 (en) * 2001-06-13 2009-09-17 Seiko Epson Corporation Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element

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JPH05323366A (ja) * 1992-05-19 1993-12-07 Mitsubishi Electric Corp 液晶ディスプレイの欠陥修復方法
JP2000133806A (ja) * 1998-10-28 2000-05-12 Sony Corp 薄膜トランジスタの水素化方法
US7659138B2 (en) * 2003-12-26 2010-02-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an organic semiconductor element
JP4873726B2 (ja) * 2007-03-26 2012-02-08 独立行政法人物質・材料研究機構 酸化亜鉛薄膜の形成方法
WO2011055856A1 (ja) * 2009-11-05 2011-05-12 住友金属鉱山株式会社 透明導電膜の製造方法及び透明導電膜、それを用いた素子、透明導電基板並びにそれを用いたデバイス
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090230821A1 (en) * 2001-06-13 2009-09-17 Seiko Epson Corporation Ceramic and method of manufacturing the same, dielectric capacitor, semiconductor device, and element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
高逸群 "退火溫度和表面處理對IGZO元件的影響" 2011年六月 *

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CN102354657B (zh) 2015-03-11
CN102354657A (zh) 2012-02-15
TW201314779A (zh) 2013-04-01

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