TWI455906B - 介電體陶瓷組合物 - Google Patents

介電體陶瓷組合物 Download PDF

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Publication number
TWI455906B
TWI455906B TW097118283A TW97118283A TWI455906B TW I455906 B TWI455906 B TW I455906B TW 097118283 A TW097118283 A TW 097118283A TW 97118283 A TW97118283 A TW 97118283A TW I455906 B TWI455906 B TW I455906B
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TW
Taiwan
Prior art keywords
dielectric ceramic
ceramic composition
ionic radius
effective ionic
mol
Prior art date
Application number
TW097118283A
Other languages
English (en)
Other versions
TW200946476A (en
Inventor
Yono Kentei
Masuno Atsunobu
Yoda Shinichi
Natsui Hidesada
Original Assignee
Japan Aerospace Exploration
Tdk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Aerospace Exploration, Tdk Corp filed Critical Japan Aerospace Exploration
Publication of TW200946476A publication Critical patent/TW200946476A/zh
Application granted granted Critical
Publication of TWI455906B publication Critical patent/TWI455906B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Claims (2)

  1. 一種介電體陶瓷組合物，其特徵在於：具有以具有六方晶構造之鈦酸鋇為主成分之鈦酸鋇與元素M，前述M之有效離子半徑，對於在12配位時之Ba2+ 之有效離子半徑或6配位時之Ti4+ 之有效離子半徑，為在±20%以內，前述M之離子價數較前述Ba或前述Ti之離子價數大，前述M係由La及Ce之至少1種。
  2. 如申請專利範圍第1項之介電體陶瓷組合物，其中，相對於前述介電體陶瓷組合物100莫耳，所包含之前述M為較0莫耳多而為10莫耳以下。
TW097118283A 2008-05-09 2008-05-15 介電體陶瓷組合物 TWI455906B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2008/058653 WO2009136443A1 (ja) 2008-05-09 2008-05-09 誘電体磁器組成物

Publications (2)

Publication Number Publication Date
TW200946476A TW200946476A (en) 2009-11-16
TWI455906B true TWI455906B (zh) 2014-10-11

Family

ID=41264505

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097118283A TWI455906B (zh) 2008-05-09 2008-05-15 介電體陶瓷組合物

Country Status (5)

Country Link
US (1) US8293668B2 (zh)
KR (1) KR101216702B1 (zh)
DE (1) DE212008000120U1 (zh)
TW (1) TWI455906B (zh)
WO (2) WO2009136443A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136443A1 (ja) * 2008-05-09 2009-11-12 独立行政法人宇宙航空研究開発機構 誘電体磁器組成物
JP5548924B2 (ja) * 2009-11-06 2014-07-16 Ｔｄｋ株式会社 誘電体磁器組成物および電子部品
JP5883217B2 (ja) * 2009-11-06 2016-03-09 Tdk株式会社 六方晶系チタン酸バリウム粉末、その製造方法、誘電体磁器組成物および電子部品
JP5734688B2 (ja) * 2010-02-10 2015-06-17 キヤノン株式会社 配向性酸化物セラミックスの製造方法、配向性酸化物セラミックス、圧電素子、液体吐出ヘッド、超音波モータおよび塵埃除去装置
CN102696083B (zh) * 2010-09-29 2015-12-16 Tdk株式会社 电介质陶瓷组合物及电子元件
JP5978553B2 (ja) 2010-09-30 2016-08-24 Tdk株式会社 六方晶系チタン酸バリウム粉末、その製造方法、誘電体磁器組成物、電子部品および電子部品の製造方法
JP5668569B2 (ja) * 2011-03-28 2015-02-12 Tdk株式会社 誘電体磁器組成物および電子部品
JP2012243841A (ja) * 2011-05-17 2012-12-10 Japan Aerospace Exploration Agency チューナブル素子及びチューナブルアンテナ
BR112014011422A2 (pt) 2011-11-16 2017-05-16 A Stuart Martin dispositivo de armazenamento de alta densidade de energia
US9396880B2 (en) 2011-11-16 2016-07-19 Martin A. Stuart High energy density storage device
KR102483896B1 (ko) 2017-12-19 2022-12-30 삼성전자주식회사 세라믹 유전체 및 그 제조 방법, 세라믹 전자 부품 및 전자장치
KR102620993B1 (ko) * 2021-07-30 2024-01-05 한국과학기술원 고유전율 및 저유전손실을 가지는 세라믹 유전체 및 이의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200814111A (en) * 2006-06-12 2008-03-16 Tdk Corp Electronic components, dielectric ceramic composition and method of manufacturing the same

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JPH0413226A (ja) 1990-05-01 1992-01-17 Nec Corp 光デイスク装置
JPWO2003016237A1 (ja) * 2001-08-09 2004-12-02 大里　齊 マイクロ波誘電体複合組成物
JP3941871B2 (ja) 2003-08-01 2007-07-04 独立行政法人 宇宙航空研究開発機構 無容器凝固法によるバリウムチタン酸化物セラミックス材料の製造方法
JP4013226B2 (ja) * 2004-01-29 2007-11-28 独立行政法人 宇宙航空研究開発機構 無容器凝固法によるバリウムチタン酸化物単結晶材料片の製造方法
JP4644856B2 (ja) * 2005-06-06 2011-03-09 独立行政法人科学技術振興機構 強誘電体ペロブスカイト型チタン酸バリウム単結晶の製造方法
WO2009136443A1 (ja) * 2008-05-09 2009-11-12 独立行政法人宇宙航空研究開発機構 誘電体磁器組成物
JP5883217B2 (ja) * 2009-11-06 2016-03-09 Tdk株式会社 六方晶系チタン酸バリウム粉末、その製造方法、誘電体磁器組成物および電子部品
JP5779860B2 (ja) * 2009-11-06 2015-09-16 Tdk株式会社 六方晶系チタン酸バリウム粉末、その製造方法、誘電体磁器組成物および電子部品

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200814111A (en) * 2006-06-12 2008-03-16 Tdk Corp Electronic components, dielectric ceramic composition and method of manufacturing the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"镧、铈掺杂对钛酸钡基介电陶瓷性能的影响" 硅酸盐通报, 2006/08/31, 第25卷, 第4期, 第76-79页 *

Also Published As

Publication number Publication date
DE212008000120U1 (de) 2011-01-13
US20110059838A1 (en) 2011-03-10
TW200946476A (en) 2009-11-16
US8293668B2 (en) 2012-10-23
WO2009136449A1 (ja) 2009-11-12
WO2009136443A1 (ja) 2009-11-12
KR20110004904A (ko) 2011-01-14
KR101216702B1 (ko) 2012-12-28

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