TWI454872B - An etching solution mixing device and an etching solution concentration measuring device - Google Patents

An etching solution mixing device and an etching solution concentration measuring device Download PDF

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TWI454872B
TWI454872B TW098112317A TW98112317A TWI454872B TW I454872 B TWI454872 B TW I454872B TW 098112317 A TW098112317 A TW 098112317A TW 98112317 A TW98112317 A TW 98112317A TW I454872 B TWI454872 B TW I454872B
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concentration
liquid
etching
solution
absorbance
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TW201003348A (en
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Toshimoto Nakagawa
Hisakuni Sato
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Hirama Lab Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/20Acidic compositions for etching aluminium or alloys thereof
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D21/00Control of chemical or physico-chemical variables, e.g. pH value
    • G05D21/02Control of chemical or physico-chemical variables, e.g. pH value characterised by the use of electric means

Description

蝕刻液調合裝置及蝕刻液濃度測定裝置Etching solution blending device and etching solution concentration measuring device

本發明係關於在半導體製造工程或平面面板顯示器製造工程(液晶基板製造工程,有機EL顯示器製造工程等)以管路連接至鋁膜(例如鋁或鋁合金之薄膜、鉬或者鉬合金之第1薄膜與鋁或者鋁合金之第2薄膜;以下稱為鋁膜)用之蝕刻裝置之蝕刻液調合裝置。The present invention relates to a semiconductor film manufacturing process or a flat panel display manufacturing process (liquid crystal substrate manufacturing engineering, organic EL display manufacturing engineering, etc.) connected to an aluminum film (for example, a film of aluminum or aluminum alloy, molybdenum or molybdenum alloy) An etching solution blending device for an etching device for a film and a second film of aluminum or aluminum alloy; hereinafter referred to as an aluminum film.

於液晶基板製造工程等之鋁膜的蝕刻工程,作為蝕刻液之硝酸與磷酸之混合水溶液、硝酸與磷酸與醋酸之混合水溶液、硝酸與磷酸與丙二酸之混合水溶液等以酸為主成分的混酸水溶液以噴霧方式或者以浸入方式等使用。主要多半使用硝酸、磷酸與醋酸之混合水溶液。例如,可以舉出磷酸濃度為70.0%、醋酸濃度為10.0%、硝酸濃度為4.0%剩下之水分濃度為16.0%之水溶液。An etching process for an aluminum film such as a liquid crystal substrate manufacturing process, a mixed aqueous solution of nitric acid and phosphoric acid as an etching solution, a mixed aqueous solution of nitric acid and phosphoric acid and acetic acid, a mixed aqueous solution of nitric acid and phosphoric acid and malonic acid, and the like as an acid component. The mixed acid aqueous solution is used by spraying or by immersion. Mostly, a mixed aqueous solution of nitric acid, phosphoric acid and acetic acid is used. For example, an aqueous solution having a phosphoric acid concentration of 70.0%, an acetic acid concentration of 10.0%, a nitric acid concentration of 4.0%, and a water concentration of 16.0% may be mentioned.

液晶基板製造工程之鋁膜用蝕刻液,為了要配合蝕刻工程得到最高的解像力,圖案的清晰、特定的梯度(taper)角度、安定性以及高的生產良率,其組成以及濃度必須嚴格控管。特別是伴隨著近年來圖案化的高精細化,圖案寬幅的微細化開始被要求。伴此,開始強烈要求蝕刻液濃度的調合精度的提高。The etching solution for the aluminum film for the liquid crystal substrate manufacturing process, in order to obtain the highest resolution with the etching process, the pattern is clear, the specific taper angle, the stability and the high production yield, the composition and concentration must be strictly controlled. . In particular, with the recent high definition of patterning, the miniaturization of the pattern width has been demanded. Along with this, the improvement of the blending precision of the etching liquid concentration is strongly demanded.

此外,蝕刻液的使用量,隨著液晶顯示器的大型化、單片基板取多面所導致的玻璃基板大型化、大量生產化等,使得大量的蝕刻液變成必要的。進而,隨著國際上液晶顯示器的低價格競爭,對於蝕刻液的降低成本也被強烈地要求著。In addition, as the amount of the etching liquid used increases, the size of the liquid crystal display increases, the size of the glass substrate increases due to the multi-faceted single-piece substrate, mass production, and the like, so that a large amount of etching liquid becomes necessary. Furthermore, with the low price competition of liquid crystal displays in the world, the cost of reducing the etching liquid is also strongly demanded.

為了對應這樣的問題,例如依序切換複數個蝕刻槽,以1個測定系連續測定管理藥液的濃度或溫度之藥液監視裝置也已被提出(例如,參照專利文獻1)。In order to cope with such a problem, for example, a chemical liquid monitoring device that continuously switches a plurality of etching grooves in order to continuously measure the concentration or temperature of the chemical solution in one measurement system has been proposed (for example, see Patent Document 1).

[專利文獻1]日本專利特開2003-086565號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-086565

然而,在以前,蝕刻液要在液晶顯示器等之製造工廠把調合(配方)以及濃度調整為目標值之後再使用,不僅在設備以及運轉成本等方面,由濃度測定等技術的觀點來看,都是極為困難的。混合硝酸原液、磷酸原液、醋酸原液與純水之蝕刻液,為了驗證其是否成為特定組成以及濃度,有必要測定各成分的濃度。However, in the past, the etching liquid was used after the blending (recipe) and the concentration were adjusted to the target value in a manufacturing plant such as a liquid crystal display, not only in terms of equipment and running costs, but also from the viewpoints of techniques such as concentration measurement. It is extremely difficult. It is necessary to measure the concentration of each component in order to verify whether or not it is a specific composition and concentration in order to mix the nitric acid stock solution, the phosphoric acid stock solution, the acetic acid stock solution, and the pure water etching solution.

然而,在線上或者離線都不進行正確地測定蝕刻液的硝酸、磷酸以及醋酸的濃度,要即時測定調合後的酸濃度是不可能的。However, it is impossible to accurately measure the concentration of nitric acid, phosphoric acid, and acetic acid in the etching solution either online or offline. It is impossible to immediately measure the acid concentration after blending.

從前,為了分別定量這樣的3種類的混合酸之適用的測定法並非習知。於蝕刻液製造商,例如將一次調合後的蝕刻液進行採樣,以離線的離子色層分析計測定酸濃度,再補充調整不足部分的原液進行二次調合。一部份係藉由非水中和滴定法間歇地進行測定而批次進行濃度調合之裝置,但是卻有著裝置很複雜、而且有必要使用滴定試藥以及會產生廢棄液、以及因為是間歇性地測定所以控制性不佳等很多問題存在。In the past, it has not been conventionally known to measure the application of such three kinds of mixed acids. The etchant manufacturer, for example, samples the etched liquid after one adjustment, measures the acid concentration by an off-line ion chromatography analyzer, and replenishes the under-adjusted stock solution for secondary blending. One part is a device for batch concentration adjustment by intermittent measurement by non-aqueous and titration methods, but it has a complicated device, and it is necessary to use a titration reagent and waste liquid, and because it is intermittently There are many problems such as poor control and so on.

亦即,在液晶顯示器等之製造工廠(以下稱為「使用側」)不得不使用已經在蝕刻液製造商(以下稱為「供給側」)就調整好組成以及濃度之蝕刻液。In other words, in a manufacturing plant such as a liquid crystal display (hereinafter referred to as "use side"), it is necessary to use an etching liquid which has been adjusted in composition and concentration by an etchant manufacturer (hereinafter referred to as "supply side").

在此場合,採用在供給側混合調整為特定濃度的硝酸原液、磷酸原液、醋酸原液與純水,以成為特定組成以及濃度的方式調合的蝕刻液充填於容器,再供給至使用側的方法。In this case, a method in which an etchant prepared by mixing a nitric acid raw solution, a phosphoric acid stock solution, an acetic acid stock solution, and pure water adjusted to a specific concentration on a supply side to a specific composition and concentration is filled in a container and then supplied to the use side is used.

在供給側調製的蝕刻液直到在使用側被使用為止需要相應於運送以及保管之期間,於這段期間有著蝕刻液劣化的問題。進而,蝕刻液中的醋酸具有揮發性所以有醋酸濃度降低的問題,硝酸會揮發為NOx氣體而會有硝酸濃度降低的問題。The etching liquid prepared on the supply side needs to be in a period corresponding to transportation and storage until it is used on the use side, and there is a problem that the etching liquid is deteriorated during this period. Further, since acetic acid in the etching liquid is volatile, there is a problem that the concentration of acetic acid is lowered, and nitric acid is volatilized into NOx gas, which causes a problem that the concentration of nitric acid is lowered.

此外,連續調合方式之蝕刻液調合裝置,不僅在使用側不曾見到,在供給側亦未曾出現。這是因為沒有連續測定蝕刻液的成分濃度之濃度測定裝置。這些問題,也可以作為蝕刻液的調合未在液晶顯示器等製造工廠(使用側)來進行的重大理由。Further, the etchant blending device of the continuous blending method has not been seen not only on the use side but also on the supply side. This is because there is no concentration measuring device that continuously measures the component concentration of the etching liquid. These problems can also be used as a major reason why the blending of the etching liquid is not performed in a manufacturing plant (use side) such as a liquid crystal display.

在此,本發明係有鑑於前述情形而發明者,目的在於提供於使用側可以精度佳而且迅速地由蝕刻原液調合出所要濃度的蝕刻液,同時可以精度佳地管理調合出來的蝕刻液的組成以及濃度之蝕刻液調合裝置。Here, the present invention has been made in view of the above circumstances, and an object of the present invention is to provide an etching liquid which can be accurately and quickly adjusted from a etching stock solution to a desired concentration on the use side, and which can accurately manage the composition of the etched liquid which is blended. And a concentration of etching solution blending device.

本案發明人為了達成前述目的,首先藉由實驗確認了調合槽的蝕刻液之硝酸濃度,與如圖9所示以純水將蝕刻液稀釋至特定倍率之稀釋液的導電率之間的相關關係。此外,藉由實驗確認了調合槽的蝕刻液之硝酸濃度,係如圖10所示與其吸光度有相關關係。此外,藉由實驗確認了調合槽的蝕刻液之水分濃度,係如圖11所示與其吸光度有相關關係。進而,藉由實驗確認了蝕刻液之磷酸濃度,係如圖12所示與其吸光度有相關關係。此外,藉由實驗確認了蝕刻液之磷酸濃度,係如圖13所示與其密度有相關關係。In order to achieve the above object, the inventors of the present invention first confirmed the correlation between the nitric acid concentration of the etching solution in the blending tank and the conductivity of the diluent which diluted the etching solution to a specific magnification with pure water as shown in FIG. . Further, it was confirmed by experiments that the nitric acid concentration of the etching solution of the blending tank was correlated with the absorbance as shown in FIG. Further, it was confirmed by experiments that the water concentration of the etching liquid in the blending tank was correlated with the absorbance as shown in FIG. Further, it was confirmed by experiments that the phosphoric acid concentration of the etching solution was correlated with the absorbance as shown in FIG. Further, the phosphoric acid concentration of the etching solution was confirmed by experiments as shown in Fig. 13 in relation to its density.

本發明,藉由稀釋水溶液的導電率測定來調整、控制硝酸濃度,此外,藉由吸光度測定來調整、控制硝酸濃度,藉由吸光度測定來調整、控制水分濃度,藉由吸光度測定來調整、控制磷酸濃度,此外,藉由密度測定來調整、控制磷酸濃度,所以成為綜合地調整、控制硝酸濃度、水分濃度以及磷酸濃度之3成分的濃度。In the present invention, the nitric acid concentration is adjusted and controlled by measuring the conductivity of the diluted aqueous solution, and the nitric acid concentration is adjusted and controlled by the absorbance measurement, and the water concentration is adjusted and controlled by the absorbance measurement, and the absorbance is adjusted and controlled. In addition, since the phosphoric acid concentration is adjusted and controlled by the density measurement, the concentration of the three components of the nitric acid concentration, the water concentration, and the phosphoric acid concentration is comprehensively adjusted and controlled.

此外,本發明意圖提高根據相關關係之濃度演算精度,由檢測出以純水稀釋調合槽內的蝕刻液後之稀釋液的導電率之導電率計的導電率值(或者蝕刻液的吸光光度計之吸光度值)與檢測出蝕刻液的水分濃度之吸光光度計之吸光度值與檢測出蝕刻液的磷酸濃度之吸光光度計之吸光度值(或者密度計之密度值)來藉由多成分演算法(重回歸分析法、多變量解析法)演算而調整、控制更為正確的蝕刻液的成分濃度。在此場合,藉由從100%減去硝酸濃度、水分濃度以及磷酸濃度,可以算出醋酸濃度。Further, the present invention is intended to improve the conductivity value of the conductivity meter based on the correlation calculation, and to measure the conductivity of the diluent after diluting the etching liquid in the mixing tank with pure water (or the illuminating meter of the etching solution) The absorbance value) and the absorbance value of the absorbance photometer that detects the water concentration of the etching solution and the absorbance value (or the density value of the densitometer) of the absorbance photometer that detects the phosphoric acid concentration of the etching solution are performed by a multi-component algorithm ( The double regression analysis method and the multivariate analysis method are used to adjust and control the component concentration of the etching liquid which is more correct. In this case, the acetic acid concentration can be calculated by subtracting the nitric acid concentration, the water concentration, and the phosphoric acid concentration from 100%.

亦即,為了達成前述目的,本發明之蝕刻液調合裝置,如圖1及圖5所示,係具備:調合鋁膜用蝕刻液之調合槽、被連接於前述調合槽之管路、往前述管路送出前述蝕刻液或被使用於前述蝕刻液的調合之液之泵;藉由前述管路連接至蝕刻裝置之蝕刻液調合裝置,其特徵為:根據藉由導電率計檢測出以純水稀釋前述調合槽內的蝕刻液之稀釋液的導電率而得的前述蝕刻液的硝酸濃度或者以吸光光度計檢測出前述蝕刻液的吸光度所得到的前述蝕刻液的硝酸濃度而將單酸原液、混酸原液或者純水之至少一種對前述調合槽補給之硝酸濃度檢測/液補給手段,及根據藉由以吸光光度計檢測前述蝕刻液所得到之前述蝕刻液的水分濃度而將單酸原液、混酸原液或者純水之至少一種對前述調合槽補給之水分濃度檢測/液補給手段,及根據藉由吸光光度計檢測前述蝕刻液之吸光度而得的前述蝕刻液的磷酸濃度或者以密度計檢測前述蝕刻液的密度所得到的前述蝕刻液的磷酸濃度而將單酸原液、混酸原液或者純水之至少一種對前述調合槽補給之磷酸濃度檢測/液補給手段。In other words, in order to achieve the above object, the etching solution mixing device of the present invention includes a mixing tank for arranging an etching solution for an aluminum film, a pipe connected to the mixing groove, and the like, as shown in Figs. 1 and 5 a pump for feeding the etchant or the liquid used for the immersion of the etchant; an etchant blending device connected to the etching device by the pipeline, characterized in that: pure water is detected by a conductivity meter a nitric acid stock solution obtained by diluting a nitric acid concentration of the etching liquid obtained by diluting a conductivity of a diluent of the etching liquid in the mixing tank or a nitric acid concentration of the etching liquid obtained by detecting an absorbance of the etching liquid by an absorption photometer At least one of a mixed acid solution or pure water, a nitric acid concentration detecting/liquid replenishing means for replenishing the mixing tank, and a monoacid stock solution and a mixed acid according to a water concentration of the etching liquid obtained by detecting the etching liquid by an absorption photometer At least one of a raw liquid or pure water, a water concentration detecting/liquid replenishing means for replenishing the mixing tank, and detecting the suction of the etching liquid by an absorption photometer Phosphoric acid concentration of the etching liquid obtained by luminosity or phosphoric acid concentration of the etching liquid obtained by detecting the density of the etching liquid by density, and at least one of a monoacid stock solution, a mixed acid stock solution or pure water is supplied to the blending tank Concentration detection / liquid replenishment means.

此外,本發明之蝕刻液調合裝置,如圖2及圖6所示,係具備:調合鋁膜用蝕刻液之調合槽、被連接於前述調合槽之管路、往前述管路送出前述蝕刻液或被使用於前述蝕刻液的調合之液之泵;藉由前述管路連接至蝕刻裝置之 蝕刻液調合裝置,其特徵為具備:由檢測出以純水稀釋前述調合槽內的蝕刻液的稀釋液的導電率之導電率計或者檢測出前述蝕刻液的硝酸濃度之吸光光度計,及檢測出前述蝕刻液的水分濃度之吸光光度計,及檢測出前述蝕刻液的磷酸濃度之吸光光度計或密度計,及檢測出硝酸濃度的前述導電率計之導電率值或者檢測出硝酸濃度之前述吸光光度計之吸光度值,及檢測出水分濃度之前述吸光光度計之吸光度值,檢測出磷酸濃度之前述吸光光度計之吸光度值或檢測出磷酸濃度之前述密度計之密度值等來藉由多成分演算法(重回歸分析法、多變量解析法)來演算前述蝕刻液的成分濃度之成分濃度演算手段,及將單酸原液、混酸原液及純水之至少一種補給至前述調合槽之液補給手段。In addition, as shown in FIG. 2 and FIG. 6, the etching liquid mixing device of the present invention includes a mixing tank for arranging an etching solution for an aluminum film, a pipe connected to the mixing tank, and the etching liquid sent to the pipe. Or a pump for the liquid of the aforementioned etching liquid; connected to the etching device by the aforementioned pipe An etching solution mixing device characterized by comprising: a conductivity meter for detecting a conductivity of a diluent for diluting an etching liquid in the mixing tank with pure water; or an absorption photometer for detecting a nitric acid concentration of the etching solution, and detecting An absorptiometer for extracting a water concentration of the etching solution, an absorbance photometer or a densitometer for detecting a phosphoric acid concentration of the etching solution, and a conductivity value of the conductivity meter for detecting a nitric acid concentration or detecting the nitric acid concentration The absorbance value of the absorptiometer, and the absorbance value of the absorbance photometer that detects the water concentration, the absorbance value of the spectrophotometer that detects the phosphoric acid concentration, or the density value of the densitometer that detects the phosphoric acid concentration, etc. a component calculation algorithm (regression analysis method, multivariate analysis method) for calculating a component concentration calculation method of a component concentration of the etching liquid, and a liquid supply for supplying at least one of a monoacid stock solution, a mixed acid stock solution, and pure water to the blending tank means.

此外,本發明之蝕刻液調合裝置,特徵點還包括前述蝕刻液係包含磷酸、硝酸之水溶液,前述蝕刻液係進而包含有機酸、鹽酸、硫酸、過氯酸之至少1種的水溶液,前述有機酸係醋酸、丙二酸,前述蝕刻液調合裝置係連續調合方式。Further, the etching liquid mixing device according to the present invention is characterized in that the etching liquid further contains an aqueous solution of phosphoric acid or nitric acid, and the etching liquid further contains an aqueous solution of at least one of an organic acid, hydrochloric acid, sulfuric acid, and perchloric acid. The acid-based acetic acid and malonic acid, and the etching liquid blending device are continuously blended.

如以上所說明的,根據本發明之蝕刻液調合裝置的話,可以發揮以下的效果。As described above, according to the etching liquid blending device of the present invention, the following effects can be exhibited.

(1)於半導體製造工廠或平面面板顯示器製造工廠之使用側,可以實現從前非常困難的鋁膜的蝕刻液調合裝置。(1) An etching liquid blending device of an aluminum film which is extremely difficult in the past can be realized on the use side of a semiconductor manufacturing factory or a flat panel display manufacturing factory.

(2)可以即時連續地測定蝕刻液之硝酸濃度、水分濃度、磷酸濃度以及醋酸濃度,可以固定地精度佳地連續調合為特定濃度。(2) The nitric acid concentration, the water concentration, the phosphoric acid concentration, and the acetic acid concentration of the etching solution can be measured continuously and continuously, and can be continuously adjusted to a specific concentration with a high degree of accuracy.

(3)即使蝕刻液中的醋酸具有揮發性而醋酸濃度降低,硝酸會揮發為NOx氣體而硝酸濃度降低的場合,也因為連續地測定濃度,所以被自動調整為目標值的濃度。。(3) Even if the acetic acid in the etching solution is volatile and the acetic acid concentration is lowered, and the nitric acid is volatilized into NOx gas and the concentration of nitric acid is lowered, the concentration is continuously measured, so that the concentration is automatically adjusted to the target value. .

(4)因為被調和的蝕刻液的濃度可以精度佳地維持一定,所以鋁薄膜的高精細尺寸的控制可以一定化,此外鋁薄膜的梯度(taper)角度的控制也一定化而使製品的生產良率大幅提高。(4) Since the concentration of the etched liquid to be tempered can be accurately maintained, the control of the high-definition size of the aluminum film can be made constant, and the control of the taper angle of the aluminum film is also fixed to produce the product. The yield has increased significantly.

(5)於使用側可以進行蝕刻液的調合以及濃度的驗證,所以可以達成大量蝕刻液的製造、對蝕刻裝置以管線直接供給以及降低成本。(5) The etchant can be blended and the concentration can be verified on the use side, so that a large amount of etching liquid can be produced, the etching device can be directly supplied to the pipeline, and the cost can be reduced.

以下,參照圖面詳細說明本發明之適切的實施型態。但是,在這些實施型態所記載的構成機器的形狀、其相對配置等,在沒有特定記載的情況下,並不將本發明的範圍侷限於圖式而已,圖式僅為說明例而已。Hereinafter, a suitable embodiment of the present invention will be described in detail with reference to the drawings. However, the shapes of the constituent devices described in the embodiments, the relative arrangement thereof, and the like are not intended to limit the scope of the invention to the drawings, and the drawings are merely illustrative examples.

圖1係顯示本發明之第1實施型態之裝置系統圖。圖中之參考編號,係構成蝕刻液調合裝置的機器及零件。亦即,此蝕刻液調合裝置,係由調合蝕刻液的調合槽1、液面高度計2、供蝕刻液的清淨化與攪拌之用的循環泵11( 也兼用往蝕刻裝置送液)、管路12、除去蝕刻液中的微細粒子等之用的過濾器13、循環攪拌用之空氣閥14、磷酸原液供給罐20、磷酸原液供給用之流量調節閥24、醋酸原液供給罐21、醋酸原液供給用之流量調節閥25、硝酸原液供給罐22、硝酸原液供給用之流量調節閥26、純水供給用之流量調節閥27、往使用點(POU)送液用之空氣閥29、及連接這些各機器的配管類,以及N2 氣體配管23、純水等之配管類等所構成。Fig. 1 is a system diagram showing a device according to a first embodiment of the present invention. The reference numerals in the figures are the machines and parts that constitute the etching solution blending device. That is, the etching liquid mixing device is a mixing tank 1 for adjusting the etching liquid, a liquid level meter 2, a circulation pump 11 for purifying and stirring the etching liquid, and also for supplying the liquid to the etching device, and piping 12. The filter 13 for removing fine particles in the etching liquid, the air valve 14 for circulating agitation, the phosphate raw material supply tank 20, the flow rate adjusting valve 24 for supplying the phosphate raw liquid, the acetic acid raw liquid supply tank 21, and the acetic acid raw liquid supply The flow rate adjusting valve 25, the nitric acid raw material supply tank 22, the flow rate adjusting valve 26 for supplying the raw nitric acid liquid, the flow rate adjusting valve 27 for supplying pure water, the air valve 29 for supplying the liquid to the point of use (POU), and the connection The piping of each machine, the N 2 gas piping 23, piping of pure water, etc. are comprised.

根據本發明,被附設於前述蝕刻液調合裝置的機器,係採樣泵3、稀釋泵38、純水泵39、檢測出硝酸濃度的導電率計15、檢測出水分濃度的吸光光度計16、檢測出磷酸濃度的吸光光度計17、電氣儀表類或者空氣儀表類等。According to the present invention, the apparatus attached to the etching liquid mixing device is a sampling pump 3, a dilution pump 38, a pure water pump 39, a conductivity meter 15 that detects a nitric acid concentration, and an absorptiometer 16 that detects a water concentration, and detects An absorbance photometer of phosphoric acid concentration, an electric instrument or an air meter.

作為供給液,係磷酸原液、醋酸原液、硝酸原液、混酸原液及純水,但並不是全部都是必要的,隨著蝕刻液的組成、設備條件、運轉條件、供給液之取得條件等,而選擇最佳的供給液及供給裝置,針對圖2至圖8也相同。The supply liquid is a phosphate stock solution, an acetic acid stock solution, a nitric acid stock solution, a mixed acid stock solution, and pure water, but not all of them are required, and depending on the composition of the etching liquid, equipment conditions, operating conditions, and conditions for obtaining the supply liquid, etc. The selection of the optimum supply liquid and supply device is the same for FIGS. 2 to 8.

作為調合方式,以連續調合方式較佳,但亦可為批次調合方式。連續調合方式的場合,於一次調合,使用純水、磷酸原液、醋酸原液、硝酸原液,先調製增大醋酸濃度之富有醋酸的一次調合液,再藉由純水、磷酸原液、硝酸原液的補充而微調整至特定濃度亦可。批次調合方式的場合,原液之調合順序以純水、磷酸原液、醋酸原液、硝酸原液較佳。As a blending method, it is preferable to use a continuous blending method, but it may also be a batch blending method. In the case of continuous blending, use one-time blending, using pure water, phosphoric acid stock solution, acetic acid stock solution, and nitric acid stock solution, first prepare a once-adjusted acetic acid-rich blending solution that increases the concentration of acetic acid, and then supplement it with pure water, phosphoric acid stock solution, and nitric acid stock solution. Micro adjustment to a specific concentration is also possible. In the case of the batch blending method, the order of mixing the raw liquids is preferably pure water, a phosphoric acid stock solution, an acetic acid stock solution, or a nitric acid stock solution.

貯留磷酸原液之磷酸原液供給罐20,以來自配管23 的N2 氣體加壓至0.1~0.2MPa,藉由磷酸原液流量調節閥24的打開而被壓送。貯留醋酸原液之醋酸原液供給罐21,以來自配管23的N2 氣體加壓至0.1~0.2MPa,藉由醋酸原液流量調節閥25的打開而被壓送。貯留硝酸原液之硝酸原液供給罐22,以來自配管23的N2 氣體加壓至0.1~0.2MPa,藉由硝酸原液流量調節閥26的打開而被壓送。純水連通來自既設配管的分歧管,藉由純水流量調節閥27之打開而被送液。這些供給液自動調節個別的閥而送液,被供給至調合槽1。The phosphate raw material supply tank 20 storing the phosphoric acid stock solution is pressurized to 0.1 to 0.2 MPa with N 2 gas from the pipe 23, and is pressurized by the opening of the phosphoric acid raw material flow rate adjusting valve 24. The acetic acid stock solution supply tank 21 in which the acetic acid stock solution is stored is pressurized to 0.1 to 0.2 MPa with N 2 gas from the piping 23, and is pressurized by the opening of the acetic acid raw liquid flow rate adjusting valve 25. The nitric acid raw material supply tank 22 that stores the nitric acid raw liquid is pressurized to 0.1 to 0.2 MPa by the N 2 gas from the pipe 23, and is pressurized by the opening of the nitric acid raw material flow rate adjusting valve 26. The pure water communicates with the branch pipe from the existing pipe, and is supplied by the opening of the pure water flow regulating valve 27. These supply liquids are automatically adjusted by individual valves and supplied to the mixing tank 1.

此外,藉由管路18之採樣泵3由調合槽1採樣之蝕刻液的一部份藉由管路34的稀釋泵38而分取,與來自管路35的純水泵39之純水合流藉由管路36混合攪拌而被稀釋至特定比率,之後以檢測出硝酸濃度的導電率計15連續測定稀釋液的導電率,已經測定過的稀釋液由管路37排放。Further, a portion of the etching liquid sampled by the mixing tank 1 by the sampling pump 3 of the line 18 is separated by the dilution pump 38 of the line 34, and is mixed with the pure water of the pure water pump 39 from the line 35. The mixture is mixed and stirred by the line 36 to be diluted to a specific ratio, and then the conductivity of the diluent is continuously measured by the conductivity meter 15 which detects the concentration of the nitric acid, and the already measured diluent is discharged from the line 37.

蝕刻液之根據純水的稀釋方式,以連續稀釋方式為佳,亦可採用以攪拌槽承接蝕刻液與純水之批次稀釋方式。The etching solution is preferably diluted in a continuous manner according to the dilution method of the pure water, and a batch dilution method in which the etching solution and the pure water are supported by the stirring tank may be used.

藉由測定稀釋液的導電率可以測定稀釋液的硝酸濃度,但因為是被稀釋為特定比率(例如10倍)所以可測定稀釋前的蝕刻液的硝酸濃度。又,若要測定稀釋前的蝕刻液的導電率以測定硝酸濃度,因為磷酸濃度或醋酸濃度會對導電率影響很大所以很困難。The nitric acid concentration of the diluent can be measured by measuring the conductivity of the diluent, but since it is diluted to a specific ratio (for example, 10 times), the nitric acid concentration of the etching solution before dilution can be measured. Further, if the conductivity of the etching liquid before dilution is measured to measure the nitric acid concentration, it is difficult because the phosphoric acid concentration or the acetic acid concentration greatly affects the conductivity.

圖2係顯示本發明之第2實施型態之裝置系統圖。本實施型態,係為了提高第1實施型態的測定精度而附加了 多成分演算器33。其他之構成與圖1的場合相同。Fig. 2 is a system diagram showing a second embodiment of the present invention. This embodiment is added to improve the measurement accuracy of the first embodiment. Multi-component calculator 33. The other configuration is the same as that in the case of Fig. 1 .

圖3係顯示本發明之第3實施型態之裝置系統圖。在本實施型態,藉由採樣泵3由調合槽1採樣,於離線設置的檢測硝酸濃度的吸光光度計19、檢測水分濃度的吸光光度計16以及檢測磷酸濃度的吸光光度計17,從管路18導入試料液而連續測定吸光度,測定完畢之液則返回調合槽1。其他之構成與圖1的場合相同。Fig. 3 is a system diagram showing a third embodiment of the present invention. In the present embodiment, the sampling pump 3 is sampled by the mixing tank 1, the absorptiometer 19 for detecting the nitric acid concentration set offline, the absorptiometer 16 for detecting the water concentration, and the absorptiometer 17 for detecting the phosphoric acid concentration, from the tube. The path 18 is introduced into the sample solution to continuously measure the absorbance, and the measured liquid is returned to the mixing tank 1. The other configuration is the same as that in the case of Fig. 1 .

圖4係顯示本發明之第4實施型態之裝置系統圖。本實施型態,係為了提高第3實施型態的測定精度而附加了多成分演算器33。其他之構成與圖1及圖3的場合相同。Fig. 4 is a system diagram showing the apparatus of the fourth embodiment of the present invention. In the present embodiment, the multi-component calculator 33 is added in order to improve the measurement accuracy of the third embodiment. The other configurations are the same as those in the case of Figs. 1 and 3.

圖5係顯示本發明之第5實施型態之裝置系統圖。本實施型態,為了進行批次調合,於圖1之調合槽1,替代液面高度計2而安裝測壓元件(load cell)4,正確地測定調合槽1的調合液之重量,根據一次調合之控制以及濃度測定值來進行濃度調整。其他之構成與圖1的場合相同。Fig. 5 is a system diagram showing the apparatus of the fifth embodiment of the present invention. In this embodiment, in order to perform batch blending, a load cell 4 is attached to the blending tank 1 of FIG. 1 instead of the liquid level altimeter 2, and the weight of the blending liquid of the blending tank 1 is accurately measured, according to one blending The concentration and the concentration measurement value are used for concentration adjustment. The other configuration is the same as that in the case of Fig. 1 .

圖6係顯示本發明之第6實施型態之裝置系統圖。本實施型態,為了進行批次調合,於圖2之調合槽1,替代液面高度計2而安裝測壓元件(load cell)4,正確地測定調合槽1的調合液之重量,而從濃度測定值進行補充重量的計算以及進行補充重量的控制。其他之構成與圖2的場合相同。Fig. 6 is a system diagram showing the apparatus of the sixth embodiment of the present invention. In this embodiment, in order to perform batch blending, a load cell 4 is attached to the blending tank 1 of FIG. 2 instead of the liquid level altimeter 2, and the weight of the blending liquid of the blending tank 1 is accurately measured, and the concentration is from the concentration. The measured value is used to calculate the supplementary weight and to control the supplementary weight. The other configuration is the same as that in the case of Fig. 2 .

圖7係顯示本發明之第7實施型態之裝置系統圖。本實施型態,為了進行批次調合,於圖3之調合槽1,替代液面高度計2而安裝測壓元件(load cell)4,正確地測定調合槽1的調合液之重量,根據一次調合之控制以及濃度測定值來進行濃度調整。其他之構成與圖3的場合相同。Fig. 7 is a system diagram showing the apparatus of the seventh embodiment of the present invention. In this embodiment, in order to perform batch blending, a load cell 4 is attached to the blending tank 1 of FIG. 3 instead of the liquid level altimeter 2, and the weight of the blending liquid of the blending tank 1 is accurately measured, according to one round of blending. The concentration and the concentration measurement value are used for concentration adjustment. The other configuration is the same as that in the case of FIG.

圖8係顯示本發明之第8實施型態之裝置系統圖。本實施型態,為了進行批次調合,於圖4之調合槽1,替代液面高度計2而安裝測壓元件(load cell)4,正確地測定調合槽1的調合液之重量,而從濃度測定值進行補充重量的計算以及進行補充重量的控制。其他之構成與圖4的場合相同。Fig. 8 is a system diagram showing the apparatus of the eighth embodiment of the present invention. In the present embodiment, in order to perform batch blending, a load cell 4 is attached to the blending tank 1 of FIG. 4 instead of the liquid level altimeter 2, and the weight of the blending liquid of the blending tank 1 is accurately measured, and the concentration is from the concentration. The measured value is used to calculate the supplementary weight and to control the supplementary weight. The other configuration is the same as that in the case of Fig. 4 .

其次,說明根據圖1至圖8所示之實施型態之裝置的控制系統。於圖1~4中,液面高度計2與調合槽1之液面高度、導電率計15(或者吸光光度計19)與蝕刻液的硝酸濃度、吸光光度計16與蝕刻液的水分濃度、吸光光度計17(或者密度計17)與蝕刻液之磷酸濃度,在本質上係分別作為獨立功能而發揮作用,本發明之特徵則是以相互補充的關連而使這些發揮功能。蝕刻液的濃度,為了要以最佳的蝕刻速度來進行蝕刻,以最佳的蝕刻剖面(profile)來進行蝕刻,必須要管理為特定的濃度。此外,首先在製品基板的品質管理上所必要的蝕刻液的硝酸濃度的目標值、水分濃度的目標值、磷酸濃度的目標值、醋酸濃度的目標值等,必須要根據操作實務或者計算而預先設定於各控制器。Next, a control system of the apparatus according to the embodiment shown in Figs. 1 to 8 will be described. In FIGS. 1 to 4, the liquid level of the liquid level meter 2 and the mixing tank 1, the conductivity meter 15 (or the absorptiometer 19), the nitric acid concentration of the etching solution, the absorbance photometer 16 and the moisture concentration of the etching solution, and the light absorption. The phosphorometer 17 (or the densitometer 17) and the phosphoric acid concentration of the etching solution essentially function as independent functions, respectively, and the present invention is characterized in that they complement each other and function. The concentration of the etching solution must be managed to a specific concentration in order to perform etching at an optimum etching rate and to perform etching with an optimum etching profile. In addition, the target value of the nitric acid concentration of the etching solution, the target value of the water concentration, the target value of the phosphoric acid concentration, and the target value of the acetic acid concentration, which are necessary for the quality management of the product substrate, must be advanced in advance according to the operation practice or calculation. Set to each controller.

以下,針對作為蝕刻液混合硝酸、磷酸、醋酸與純水的溶液之實施例進行說明。Hereinafter, an example in which a solution of nitric acid, phosphoric acid, acetic acid, and pure water is mixed as an etching liquid will be described.

蝕刻液的硝酸濃度,為了發揮最適之蝕刻性能必須管理為特定的濃度範圍。硝酸濃度有必要調合為特定的目標值,例如4.0±0.5%。The nitric acid concentration of the etching solution must be managed to a specific concentration range in order to exert optimum etching performance. It is necessary to adjust the concentration of nitric acid to a specific target value, for example, 4.0 ± 0.5%.

本案發明人,藉由實驗檢討蝕刻液之硝酸濃度與導電率之關係,藉由實驗確認了調合槽之蝕刻液的硝酸濃度,與以純水將蝕刻液稀釋至特定倍率之稀釋液的導電率之間的相關關係。如圖9所示,確認了以純水將蝕刻液稀釋至特定倍率之稀釋液的導電率與蝕刻液之硝酸濃度為直線關係,藉由檢測出以水將蝕刻液稀釋至特定倍率的稀釋液的導電率可以測定硝酸濃度。如圖1、5所示,被設置於管路37的導電率計15,具備使測定誤差為最小限度內的各種補償功能與導電率控制器30。把以純水稀釋至特定倍率之液的導電率測定值,輸入至導電率控制器30,以該值成為目標值的方式,藉由輸出訊號將磷酸原液、醋酸原液、硝酸原液及純水之至少一方,藉由流量調節閥24、25、26、27而分別自動控制,補給至使硝酸濃度調整為目標值The inventor of the present invention experimentally reviews the relationship between the nitric acid concentration of the etching solution and the conductivity, and experimentally confirms the nitric acid concentration of the etching solution in the blending tank, and the conductivity of the diluent which is diluted with pure water to a specific ratio. The relationship between them. As shown in FIG. 9, it was confirmed that the conductivity of the diluted solution in which the etching solution was diluted to a specific magnification with pure water was linearly related to the nitric acid concentration of the etching liquid, and the dilution liquid which diluted the etching liquid to a specific magnification with water was detected. The conductivity can be determined by the concentration of nitric acid. As shown in FIGS. 1 and 5, the conductivity meter 15 provided in the conduit 37 is provided with various compensation functions and conductivity controllers 30 for minimizing measurement errors. The measured value of the conductivity of the liquid diluted to a specific magnification with pure water is input to the conductivity controller 30, and the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water are outputted by the output signal so that the value becomes the target value. At least one of them is automatically controlled by the flow regulating valves 24, 25, 26, and 27, and is supplied to adjust the concentration of nitric acid to a target value.

本案發明人,藉由實驗檢討蝕刻液之硝酸濃度與吸光度之關係,藉由實驗確認了調合槽之蝕刻液的硝酸濃度,與蝕刻液的吸光度之間的相關關係。吸光度之測定波長,以從紫外線區域之250nm至320nm之範圍為佳,在290nm附近感度很大特別適合。如圖10所示,確認了測定波長λ=290nm之紫外吸光光度計之吸光度與硝酸濃度成高度的直線關係,藉由測定吸光度可以正確地測定硝酸濃度。如圖3、7所示,被線上設置於管路18的吸光光度計19,具備使測定誤差為最小限度內的各種補償功能與吸光度控制器40。把從管路18導入的試料液之吸光度測定值,輸入至吸光度控制器40,以該值成為目標值的方式,藉由輸出訊號將磷酸原液、醋酸原液、硝酸原液及純水之至少一方,藉由流量調節閥24、25、26、27而分別自動控制,補給至使硝酸濃度調整為目標值The inventors of the present invention examined the relationship between the nitric acid concentration of the etching solution and the absorbance by an experiment, and confirmed the correlation between the nitric acid concentration of the etching solution of the mixing tank and the absorbance of the etching solution. The measurement wavelength of the absorbance is preferably in the range of 250 nm to 320 nm in the ultraviolet region, and the sensitivity is particularly suitable in the vicinity of 290 nm. As shown in Fig. 10, it was confirmed that the absorbance of the ultraviolet absorption spectrophotometer having a measurement wavelength of λ = 290 nm was linear with respect to the concentration of nitric acid, and the concentration of nitric acid was accurately measured by measuring the absorbance. As shown in FIGS. 3 and 7, the absorptiometer 19 provided on the line 18 is provided with various compensation functions and absorbance controller 40 for minimizing the measurement error. The absorbance measurement value of the sample liquid introduced from the line 18 is input to the absorbance controller 40, and at least one of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is outputted by the output signal so that the value becomes the target value. Automatically controlled by the flow regulating valves 24, 25, 26, 27, respectively, to adjust the nitric acid concentration to the target value

此外,蝕刻液的水分濃度,為了發揮最適之蝕刻性能必須管理為特定的濃度範圍。因此,水分濃度有必要調合為特定的目標值,例如16.0±1.0%。In addition, the moisture concentration of the etching solution must be managed to a specific concentration range in order to exhibit optimum etching performance. Therefore, it is necessary to blend the water concentration to a specific target value, for example, 16.0 ± 1.0%.

本案發明人,藉由實驗檢討蝕刻液之水分濃度與吸光度之關係,藉由實驗確認了調合槽之蝕刻液的水分濃度,與蝕刻液的吸光度之間的相關關係。吸光度之測定波長,以從近紅外線區域之1920nm至1960nm之範圍為佳,在1931nm附近感度很大特別適合。如圖11所示,確認了測定波長λ=1931nm之吸光度與水分濃度成高度的直線關係,藉由測定吸光度可以正確地測定水分濃度。如圖1、3、5、7所示,被線上設置於管路18的吸光光度計16,具備使測定誤差為最小限度內的各種補償功能與吸光度控制器31。把從管路18導入的試料液之吸光度測定值,輸入至吸光度控制器31,以該值成為目標值的方式,藉由輸出訊號將磷酸原液、醋酸原液、硝酸原液及純水之至少一方,藉由流量調節閥24、25、26、27而分別自動控制,補給至使水分濃度調整為目標值The inventors of the present invention examined the relationship between the water concentration of the etching solution and the absorbance of the etching solution by experimentally reviewing the relationship between the water concentration and the absorbance of the etching solution. The measurement wavelength of the absorbance is preferably in the range of 1920 nm to 1960 nm in the near-infrared region, and the sensitivity is particularly suitable in the vicinity of 1931 nm. As shown in FIG. 11, the linear relationship between the absorbance at the measurement wavelength λ=1931 nm and the water concentration was confirmed, and the water concentration was accurately measured by measuring the absorbance. As shown in Figs. 1, 3, 5, and 7, the absorptiometer 16 provided on the line 18 is provided with various compensation functions and absorbance controllers 31 for minimizing measurement errors. The absorbance measurement value of the sample liquid introduced from the line 18 is input to the absorbance controller 31, and at least one of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is outputted by the output signal so that the value becomes the target value. Automatically controlled by flow regulating valves 24, 25, 26, 27, respectively, to adjust the water concentration to the target value

此外,蝕刻液的磷酸濃度,為了發揮最適之蝕刻性能必須管理為特定的濃度範圍。因此,磷酸濃度有必要調合 為特定的目標值,例如70.0±1.0%。In addition, the phosphoric acid concentration of the etching solution must be managed to a specific concentration range in order to exhibit optimum etching performance. Therefore, it is necessary to blend the phosphoric acid concentration. For a specific target value, for example, 70.0 ± 1.0%.

本案發明人,藉由實驗檢討蝕刻液的磷酸濃度與吸光度之關係,發現吸光度之測定波長,以從近紅外線區域之2050nm至2200nm之範圍為佳,在2101nm附近感度很大特別適合。如圖12所示,確認了測定波長λ=2101nm之吸光度與磷酸濃度成直線關係,藉由測定吸光度可以測定水分濃度。如圖1、3、5、7所示,被線上設置於管路18的吸光光度計17,具備使測定誤差為最小限度內的各種補償功能與吸光度控制器32。把從管路18導入的試料液之吸光度測定值,輸入至吸光度控制器32,以該值成為目標值的方式,藉由輸出訊號將磷酸原液、醋酸原液、硝酸原液及純水之至少一方,藉由流量調節閥24、25、26、27而分別自動控制,補給至使磷酸濃度調整為目標值。The inventors of the present invention have experimentally reviewed the relationship between the phosphoric acid concentration of the etching solution and the absorbance, and found that the measurement wavelength of the absorbance is preferably in the range of 2050 nm to 2200 nm in the near-infrared region, and is particularly suitable in the vicinity of 2101 nm. As shown in Fig. 12, it was confirmed that the absorbance at the measurement wavelength λ = 2101 nm is linear with the phosphoric acid concentration, and the water concentration can be measured by measuring the absorbance. As shown in Figs. 1, 3, 5, and 7, the absorptiometer 17 provided on the line 18 is provided with various compensation functions and absorbance controllers 32 for minimizing measurement errors. The absorbance measurement value of the sample liquid introduced from the line 18 is input to the absorbance controller 32, and at least one of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is outputted by the output signal so that the value becomes the target value. The flow rate adjusting valves 24, 25, 26, and 27 are automatically controlled and supplied to adjust the phosphoric acid concentration to a target value.

此外,本案發明人藉由實驗檢討蝕刻液的磷酸濃度與密度之關係,發現隨著磷酸濃度的上升,密度也跟著變高。如圖13所示,確認了密度與磷酸濃度成直線關係,藉由測定密度可以測定磷酸濃度。於圖1、3、5、7,係將吸光光度計17置換為密度計,將吸光度控制器32置換為密度控制器,針對機能關連與在吸光光度計17及吸光度控制器32的場合相同。Further, the inventors of the present invention examined the relationship between the phosphoric acid concentration of the etching solution and the density by an experiment, and found that as the concentration of phosphoric acid increases, the density also increases. As shown in Fig. 13, it was confirmed that the density was linear with the phosphoric acid concentration, and the phosphoric acid concentration was measured by measuring the density. 1, 3, 5, and 7, the absorptiometer 17 is replaced with a densitometer, and the absorbance controller 32 is replaced with a density controller, which is the same as the function of the absorptiometer 17 and the absorbance controller 32.

進而,本案發明人,藉由根據相關關係之研究及解析,如後述之表1所示,可以由測定以純水稀釋調合槽內的蝕刻液後之稀釋液的導電率之導電率計的導電率值(或者蝕刻液之測定硝酸濃度的吸光光度計之吸光度值)與測定蝕刻液的水分濃度之吸光光度計之吸光度值與測定蝕刻液的磷酸濃度之吸光光度計之吸光度值(或者密度計之密度值)之3種類的特性值來藉由線性重回歸分析法(MLR-ILS)而演算求出更為正確的蝕刻液的成分濃度。在此場合,藉由從100%減去硝酸濃度、水分濃度以及磷酸濃度,可以算出醋酸濃度。Further, the inventors of the present invention can conduct conductivity by measuring the conductivity of the diluent after the etching liquid in the mixing tank by pure water, as shown in Table 1 below, according to the research and analysis of the correlation. The absorbance value of the absorbance photometer (or the absorbance value of the absorbance photometer of the etchant for measuring the nitric acid concentration) and the absorbance photometer of the etchant solution and the absorbance of the phosphoric acid concentration of the etchant (or the densitometer) The characteristic values of the three types of density values are calculated by linear regression analysis (MLR-ILS) to obtain a more accurate concentration of the component of the etching solution. In this case, the acetic acid concentration can be calculated by subtracting the nitric acid concentration, the water concentration, and the phosphoric acid concentration from 100%.

如圖2所示,來自導電率計15、吸光光度計16與吸光光度計17之測定值的輸出,被輸入至多成分演算器33,藉由多成分演算法(重回歸分析法/多變量解析法),演算而調整、控制正確的蝕刻液之成分濃度。以硝酸濃度、醋酸濃度、水分濃度以及磷酸濃度成為目標值的方式,藉由多成分演算器33之輸出訊號將磷酸原液、醋酸原液、硝酸原液及純水之至少一方,藉由流量調節閥24、25、26、27而分別自動控制,補給至使各成分濃度調整為目標值。圖4、圖6、圖8之說明也與圖2之說明相同,因此省略。As shown in Fig. 2, the outputs from the measured values of the conductivity meter 15, the absorptiometer 16, and the absorptiometer 17 are input to the multi-component calculator 33, and the multi-component algorithm (multi-regression analysis/multivariate analysis) Method), adjust and control the concentration of the correct etching solution. At least one of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is passed through the flow rate adjusting valve 24 by the output signal of the multi-component calculator 33 so that the nitric acid concentration, the acetic acid concentration, the water concentration, and the phosphoric acid concentration are the target values. , 25, 26, and 27 are automatically controlled, and the supply is adjusted to the target value. The description of FIGS. 4, 6, and 8 is also the same as that of FIG. 2, and therefore will be omitted.

圖1~圖4之實施型態,在批次調合方式也可以使用,但在此係以連續調合方式使用。此處,針對圖1所示之第1實施型態之裝置所意圖之控制系統的機能性關連加以說明。液面高度計2,被連接於末圖示的液面高度控制器。調合槽1為空時,液面高度計2檢測出其係空的,藉由液面高度控制器的輸出訊號而將磷酸原液、醋酸原液、硝酸原液以及純水,分別藉由流量調節閥24、25、26、27而自動控制送液,使液面高度達到設定位置。於一次調合,使用純水、磷酸原液、醋酸原液、硝酸原液,先調製醋酸濃度比蝕刻新液還要大的富有醋酸的一次調合液,再藉由磷酸原液、硝酸原液、純水的補充而往特定濃度微調整亦可。又,藉由液面高度控制器之輸出訊號,以使磷酸原液、醋酸原液、硝酸原液以及純水成為與蝕刻新液同等的濃度的方式於適切的流量比,藉由流量調節閥24、25、26、27調節閥開度而送液亦可。The embodiment of Fig. 1 to Fig. 4 can also be used in the batch blending mode, but it is used in a continuous blending manner. Here, the functional relationship of the control system intended for the apparatus of the first embodiment shown in Fig. 1 will be described. The liquid level altimeter 2 is connected to the liquid level controller shown at the end. When the mixing tank 1 is empty, the liquid level altimeter 2 detects that it is empty, and the phosphate raw liquid, the acetic acid raw liquid, the nitric acid raw liquid and the pure water are respectively passed through the flow regulating valve 24 by the output signal of the liquid level controller. 25, 26, 27 and automatically control the liquid supply, so that the liquid level reaches the set position. In one round of mixing, pure water, phosphoric acid stock solution, acetic acid stock solution, and nitric acid stock solution are used to prepare a once-adjusted acetic acid-containing mixed solution having a concentration of acetic acid larger than that of the etching new liquid, and then supplemented by a phosphoric acid stock solution, a nitric acid stock solution, and pure water. It is also possible to finely adjust to a specific concentration. Further, the output signal of the liquid level controller is such that the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water have the same concentration as the etching new liquid, and the flow rate adjusting valves 24 and 25 are used. 26, 27 adjust the valve opening and send liquid.

接著,導電率計15連續測定蝕刻液的稀釋液之導電率,藉由導電率控制器30的輸出訊號,磷酸原液、醋酸原液、硝酸原液以及純水之至少一方於適切的微小流量,藉由流量調節閥24、25、26、27之至少一方調節閥開度而送液,以成為目標值的硝酸濃度的方式自動控制。Next, the conductivity meter 15 continuously measures the conductivity of the diluent of the etching solution, and at least one of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is at an appropriate minute flow rate by the output signal of the conductivity controller 30. At least one of the flow rate adjusting valves 24, 25, 26, and 27 adjusts the valve opening degree to supply the liquid, and automatically controls the concentration of the nitric acid to a target value.

硝酸濃度小的場合,導電率計15連續測定蝕刻液的稀釋液之導電率,藉由導電率控制器30的輸出訊號,於磷酸原液為適切的微小流量藉由流量調節閥26調節閥開度而送液,以成為目標值的硝酸濃度的方式自動控制。此外,吸光光度計16連續測定蝕刻液的水分濃度,藉由吸光度控制器31的輸出訊號,磷酸原液、醋酸原液、硝酸原液以及純水之至少一方於適切的微小流量,藉由流量調節閥24、25、26、27之至少一方調節閥開度而送液,以成為目標值的硝酸濃度的方式自動控制。When the concentration of nitric acid is small, the conductivity meter 15 continuously measures the conductivity of the diluent of the etching solution, and the output of the conductivity controller 30 adjusts the valve opening degree by the flow regulating valve 26 at a suitable minute flow rate of the phosphoric acid solution. The liquid supply is automatically controlled in such a manner as to achieve a target nitric acid concentration. Further, the absorptiometer 16 continuously measures the water concentration of the etching solution, and at least one of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is at a suitable minute flow rate by the output signal of the absorbance controller 31, by the flow regulating valve 24 At least one of 25, 26, and 27 adjusts the valve opening degree to supply the liquid, and automatically controls the concentration of the nitric acid to be the target value.

水分濃度小的場合,吸光光度計16連續測定蝕刻液的水分濃度,藉由吸光度控制器31的輸出訊號,於純水在適切的微小流量藉由流量調節閥27調節閥開度而送液,以成為目標值的水分濃度的方式自動控制。When the water concentration is small, the absorption photometer 16 continuously measures the water concentration of the etching liquid, and the liquid output is adjusted by the flow rate adjusting valve 27 at a suitable minute flow rate by the output signal of the absorbance controller 31. It is automatically controlled in such a manner as to become the target water concentration.

此外,吸光光度計17連續測定蝕刻液的磷酸濃度,藉由吸光度控制器32的輸出訊號,磷酸原液、醋酸原液、硝酸原液以及純水之至少一方於適切的微小流量,藉由流量調節閥24、25、26、27之至少一方調節閥開度而送液,以成為目標值的硝酸濃度的方式自動控制。Further, the absorptiometer 17 continuously measures the phosphoric acid concentration of the etching solution, and at least one of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is at a suitable minute flow rate by the output signal of the absorbance controller 32, by the flow regulating valve 24 At least one of 25, 26, and 27 adjusts the valve opening degree to supply the liquid, and automatically controls the concentration of the nitric acid to be the target value.

磷酸濃度小的場合,吸光光度計17連續測定蝕刻液的磷酸濃度,藉由吸光度控制器32的輸出訊號,於磷酸原液在適切的微小流量藉由流量調節閥24調節閥開度而送液,以成為目標值的磷酸濃度的方式自動控制。When the phosphoric acid concentration is small, the absorption photometer 17 continuously measures the phosphoric acid concentration of the etching solution, and the liquid crystal is supplied by the flow rate adjusting valve 24 at a suitable minute flow rate by the output signal of the absorbance controller 32. It is automatically controlled in such a manner as to achieve a target concentration of phosphoric acid.

其次,針對圖2所示之第2實施型態之裝置所意圖之控制系統的機能性關連加以說明。本實施型態,主要適用於正確地測定而調合硝酸濃度、水分濃度、磷酸濃度以及醋酸濃度的場合等。如圖2所示,來自導電率計15、吸光光度計16與吸光光度計17之測定值的輸出,被輸入至多成分演算器33,藉由多成分演算法(重回歸分析法/多變量解析法),演算而調整、控制正確的蝕刻液之成分濃度。調合槽1為空時,液面高度計2檢測出其係空的,藉由液面高度控制器的輸出訊號而將磷酸原液、醋酸原液、硝酸原液以及純水,分別藉由流量調節閥24、25、26、27而自動控制送液,使液面高度達到設定位置。於一次調合,以使磷酸原液、醋酸原液、硝酸原液以及純水成為與蝕刻新液同等的濃度的方式於適切的流量比,藉由流量調節閥24、25、26、27調節閥開度而送液。接著以硝酸濃度、醋酸濃度、水分濃度以及磷酸濃度成為目標值的方式,藉由多成分演算器33之輸出訊號將磷酸原液、醋酸原液、硝酸原液及純水,藉由流量調節閥24、25、26、27而分別自動控制而送液,補給至使各成分濃度調整為目標值。藉由來自使用點(use point)的要求訊號,運轉循環送液泵11,使送液用之空氣閥29為開而送液至使用點。送液開始後液面高度會降低,所以液面高度計2檢測出降低,藉由液面高度控制器的輸出訊號而將磷酸原液、醋酸原液、硝酸原液以及純水,分別藉由流量調節閥24、25、26、27而自動控制送液,使液面高度回到設定位置。其他之控制系統的機能性關連,與圖1的場合相同。Next, the functional relationship of the control system intended for the apparatus of the second embodiment shown in Fig. 2 will be described. In the present embodiment, it is mainly applied to a case where the nitric acid concentration, the water concentration, the phosphoric acid concentration, and the acetic acid concentration are adjusted in a proper manner. As shown in Fig. 2, the outputs from the measured values of the conductivity meter 15, the absorptiometer 16, and the absorptiometer 17 are input to the multi-component calculator 33, and the multi-component algorithm (multi-regression analysis/multivariate analysis) Method), adjust and control the concentration of the correct etching solution. When the mixing tank 1 is empty, the liquid level altimeter 2 detects that it is empty, and the phosphate raw liquid, the acetic acid raw liquid, the nitric acid raw liquid and the pure water are respectively passed through the flow regulating valve 24 by the output signal of the liquid level controller. 25, 26, 27 and automatically control the liquid supply, so that the liquid level reaches the set position. By adjusting the valve opening degree by the flow regulating valves 24, 25, 26, 27 at a suitable flow ratio in such a manner that the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water have the same concentration as the etching new liquid. Give liquid. Next, the nitric acid concentration, the acetic acid stock solution, the nitric acid stock solution, and the pure water are passed through the flow regulating valves 24 and 25 by the output signals of the multi-component calculator 33 so that the nitric acid concentration, the acetic acid concentration, the water concentration, and the phosphoric acid concentration become the target values. In addition, 26 and 27 are automatically controlled to supply liquid, and the supply is adjusted to adjust the concentration of each component to the target value. The circulating liquid supply pump 11 is operated by a request signal from a use point, and the liquid supply valve 29 is opened to supply liquid to the point of use. After the liquid supply starts, the liquid level is lowered, so that the liquid level altimeter 2 detects a decrease, and the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water are respectively passed through the flow regulating valve 24 by the output signal of the liquid level controller. , 25, 26, 27 and automatically control the liquid supply, so that the liquid level returns to the set position. The functional relationship of other control systems is the same as in the case of Figure 1.

[多成分演算器33][Multi-component calculator 33]

本案發明人,藉由實驗,發現硝酸、磷酸以及醋酸共存的場合,硝酸濃度的稀釋水溶液之導電率、硝酸濃度之吸光度、水分濃度之吸光度、磷酸濃度之吸光度、磷酸濃度之密度之測定值,並不是分別只感應於一個成分而已,因為彼此相互相關,所以必須藉由重回歸分析才能求出正確的濃度。The inventors of the present invention found out that the conductivity of the dilute aqueous solution of nitric acid concentration, the absorbance of the nitric acid concentration, the absorbance of the water concentration, the absorbance of the phosphoric acid concentration, and the density of the phosphoric acid concentration are measured by experiments in the presence of nitric acid, phosphoric acid, and acetic acid. It is not only sensitive to one component, but because they are related to each other, the correct concentration must be obtained by heavy regression analysis.

此外,本案發明人,藉由根據相關關係之研究及解析的結果,發現由3種類的特性值(測定以純水稀釋鋁膜用蝕刻處理槽內的蝕刻液後之稀釋液的導電率之導電率計的導電率值或者測定蝕刻液之硝酸濃度的吸光光度計之吸光度值、測定蝕刻液的水分濃度之吸光光度計之吸光度值、測定蝕刻液的磷酸濃度之吸光光度計之吸光度值(或者密度計之密度值)),來藉由線性重回歸分析法(MLR-ILS)而演算求出正確的蝕刻液的成分濃度(硝酸濃度、水分濃度、及磷酸濃度),可以由100%減去這些被算出的硝酸濃度、水分濃度、及磷酸濃度而算出醋酸濃度。In addition, the inventors of the present invention found the conductivity values of the three kinds of characteristic values (measuring the conductivity of the dilution liquid after etching the etching liquid in the etching treatment tank for the aluminum film with pure water by the results of the research and analysis of the correlation relationship). The conductivity value of the meter or the absorbance value of the spectrophotometer for measuring the nitric acid concentration of the etching solution, the absorbance value of the spectrophotometer for measuring the water concentration of the etching solution, and the absorbance value of the absorptiometer for measuring the phosphoric acid concentration of the etching solution (or The density value of the densitometer)) is calculated by linear regression analysis (MLR-ILS) to determine the component concentration (nitric acid concentration, water concentration, and phosphoric acid concentration) of the correct etching solution, which can be subtracted from 100%. The calculated nitric acid concentration, water concentration, and phosphoric acid concentration were used to calculate the acetic acid concentration.

此處,例示重回歸分析之演算式。重回歸分析係由校正與預測兩個階段所構成。假設n成分系之重回歸分析,準備m個校正標準溶液。存在於第i個溶液中之第j個成分的濃度以Cij表示。此處,i=1~m、j=1~n。針對m個標準溶液,分別測定p個特性質(例如,某個波長之吸光度或導電率)Aik(k=1~p)。濃度資料與特性值資料分別可以統合表示為行列的形式(C,A)。Here, the calculation formula of the double regression analysis is exemplified. The heavy regression analysis consists of two stages of correction and prediction. Assuming a heavy regression analysis of the n component system, m calibration standard solutions were prepared. The concentration of the jth component present in the i-th solution is represented by Cij. Here, i=1 to m and j=1 to n. For each of the m standard solutions, p characteristic properties (for example, absorbance or conductivity at a certain wavelength) Aik (k = 1 to p) were measured. The concentration data and the characteristic value data can be collectively represented as a matrix (C, A).

把這些之行列賦予關連的行列稱為校正行列,此處以記號S(Skj;k=1~p、j=1~n)表示。The ranks to which these ranks are assigned are referred to as correction ranks, and are represented by symbols S(Skj; k=1 to p, j=1 to n).

[數學式2][Math 2]

C=A‧SC=A‧S

由已知的C與A(A的內容不僅同時的測定值而已,亦可混入異質的測定值。例如吸光度與導電度)藉由行列演算而算出S是屬於校正階段。此時必須要p≧n且m≧np。S之各要素全部是未知數,所以最好是m>np,該場合如下所述進行最小二階演算。From the known C and A (the contents of A are not only the measured values at the same time, but also the heterogeneous measured values may be mixed in. For example, the absorbance and the conductivity), the calculation of S by the rank calculation is a correction phase. At this point you must have p≧n and m≧np. Each element of S is an unknown number, so it is preferable that m>np, and in this case, the minimum second-order calculation is performed as follows.

[數學式3][Math 3]

S=(AT A)-1 (AT C)S=(A T A) -1 (A T C)

此處,T次方代表轉置行列,(-1)次方代表逆行列。針對濃度未知的試料液測定p個特定值,將這些設為Au(Auk;k=1~p)的話,將其乘上S可以得到所要求的濃度Cu(Cuj;j=1~n)。Here, the T-th power represents the transposed rank, and the (-1)-th power represents the retrograde column. When p specific values are measured for the sample liquid having an unknown concentration, and these are set to Au (Auk; k = 1 to p), multiplied by S to obtain a desired concentration Cu (Cuj; j = 1 to n).

[數學式4][Math 4]

Cu=Au‧SCu=Au‧S

此為預測階段。藉由從校正標準12(12個校正標準溶液)之中,挑選一個為未知試料,以剩下11標準求得校正行列,算出假定之未知試料的濃度與已知之值(重量調製值)相比的手法Leave-One-Out法進行MLR-ILS計算之計算結果顯示於表1。表1係由近紅外2波長(1931,2101nm)與10倍稀釋導電率所求得的磷酸、硝酸、水分的濃度。This is the forecasting phase. By selecting one of the calibration standards 12 (12 calibration standard solutions) as the unknown sample, and using the remaining 11 criteria to obtain the calibration rank, the calculated unknown sample concentration is compared with the known value (weight modulation value). The calculation results of the MLR-ILS calculation by the Leave-One-Out method are shown in Table 1. Table 1 shows the concentrations of phosphoric acid, nitric acid, and water obtained by the near-infrared 2 wavelength (1931, 2101 nm) and 10-fold diluted conductivity.

多成分演算器33,根據前述發明人的智識與創見,藉由多成分演算法(重回歸分析法/多變量解析法),演算而調整、控制正確的蝕刻液的成分濃度。The multi-component calculator 33 adjusts and controls the concentration of the component of the correct etching liquid by the multi-component algorithm (re-regression analysis method/multivariate analysis method) based on the above-described inventors' knowledge and originality.

於多成分演算器33,被連接著導電率計15、吸光光度計16、及吸光光度計17。The multi-component calculator 33 is connected to a conductivity meter 15, an absorptiometer 16, and an absorptiometer 17.

多成分演算器33,由導電率計15、吸光光度計16、及吸光光度計17所輸入的導電率、各吸光度,藉由多成分演算法(重回歸分析法/多變量解析法)演算更為正確的蝕刻液的成分濃度(硝酸濃度、水分濃度及磷酸濃度),進而藉由從100%減去這些演算出的硝酸濃度、水分濃度及磷酸濃度而算出醋酸濃度,以使這些之各濃度成為預先決定的目標值的方式,開閉控制流量調節閥24、25、26、27之中之至少一個流量調節閥。藉此,將對應於其被控制的流量調節閥的原液或純水供給至蝕刻處理槽1內,調整個成分濃度。The multi-component calculator 33, the conductivity and the absorbance input by the conductivity meter 15, the absorptiometer 16, and the absorptiometer 17 are calculated by a multi-component algorithm (re-regression analysis/multivariate analysis). For the correct concentration of the etching solution (nitric acid concentration, water concentration, and phosphoric acid concentration), the acetic acid concentration is calculated by subtracting the calculated nitric acid concentration, water concentration, and phosphoric acid concentration from 100% to make each of these concentrations. At least one of the flow rate adjustment valves 24, 25, 26, and 27 is opened and closed to open and close the flow rate adjustment valve. Thereby, the stock solution or the pure water corresponding to the flow rate control valve to be controlled is supplied into the etching treatment tank 1, and the component concentrations are adjusted.

其次,針對圖3所示之第3實施型態之裝置所意圖之控制系統的機能性關連加以說明。本實施型態,取代藉由導電率計檢測出以純水稀釋圖1的調合槽內之蝕刻液後的稀釋液的導電率,而藉由吸光光度計檢測前述蝕刻液之硝酸濃度以進行控制。其他之控制系統的機能性關連,與圖1的場合相同。Next, the functional relationship of the control system intended for the apparatus of the third embodiment shown in Fig. 3 will be described. In this embodiment, instead of measuring the conductivity of the diluent after diluting the etching solution in the mixing tank of FIG. 1 with pure water by a conductivity meter, the nitric acid concentration of the etching solution is detected by an absorption photometer for control. . The functional relationship of other control systems is the same as in the case of Figure 1.

其次,針對圖4所示之第4實施型態之裝置所意圖之控制系統的機能性關連加以說明。本實施型態,取代藉由導電率計檢測出以純水稀釋圖2的調合槽內之蝕刻液後的稀釋液的導電率,而藉由吸光光度計檢測前述蝕刻液之硝酸濃度以進行控制。其他之控制系統的機能性關連,與圖2的場合相同。Next, the functional relationship of the control system intended for the apparatus of the fourth embodiment shown in Fig. 4 will be described. In this embodiment, instead of measuring the conductivity of the diluent after diluting the etching solution in the mixing tank of FIG. 2 with pure water by a conductivity meter, the nitric acid concentration of the etching liquid is detected by an absorption photometer for control. . The functional relationship of other control systems is the same as in the case of Figure 2.

於連續調合方式,通常調合槽的液面高度係以維持在充滿的上限高度附近的方式被控制。亦即,被調合的蝕刻液,被送液至貯留槽或使用點而液面高度降低時,立刻進行一次調合,接著以使各成分濃度成為目標值的方式調整控制。亦即,調合槽的液面高度維持充滿狀態,所以也同時具備有效的貯留槽的功能。In the continuous blending mode, the liquid level of the blending tank is usually controlled to maintain the vicinity of the upper limit height of the full tank. In other words, when the etched liquid to be immersed is sent to the storage tank or the use point and the liquid level is lowered, the etchant is immediately adjusted once, and then the control is adjusted so that the concentration of each component becomes the target value. That is, the liquid level of the mixing tank is maintained at a full state, so that it also has an effective storage tank function.

圖5~圖8之實施型態,係以批次調合方式使用。此處,針對圖5所示之第5實施型態之裝置所意識到之控制系統的機能性關連加以說明。本實施型態,為了進行批次調合,於圖1之調合槽1,替代液面高度計2而安裝測壓元件(load cell)4,正確地測定調合槽1的調合液之重量,根據一次調合之控制以及濃度測定值來進行濃度調整。被調合之蝕刻液,幾乎全量被送液至貯留槽或使用點,調合槽1成為空的狀態。調合槽1於空的狀態,測壓元件4檢測出在下限,藉由測壓元件4的輸出訊號,在使純水之調合重量成為特定重量之前藉由流量調節閥27送液。The embodiment of Figures 5 to 8 is used in a batch blending manner. Here, the functional relationship of the control system that is recognized by the apparatus of the fifth embodiment shown in FIG. 5 will be described. In this embodiment, in order to perform batch blending, a load cell 4 is attached to the blending tank 1 of FIG. 1 instead of the liquid level altimeter 2, and the weight of the blending liquid of the blending tank 1 is accurately measured, according to one blending The concentration and the concentration measurement value are used for concentration adjustment. The etched liquid to be blended is almost completely fed to the storage tank or the use point, and the blending tank 1 is in an empty state. When the mixing tank 1 is in an empty state, the load cell 4 detects the lower limit, and the output signal of the load cell 4 is supplied by the flow rate adjusting valve 27 before the blending weight of the pure water becomes a specific weight.

其次,藉由測壓元件4的輸出訊號,藉由流量調節閥24送液直到磷酸原液的調合重量成為特定的重量為止。其次,藉由測壓元件4的輸出訊號,藉由流量調節閥25送液直到醋酸原液的調合重量成為特定的重量為止。進而,藉由測壓元件4的輸出訊號,藉由流量調節閥26送液直到硝酸原液的調合重量成為特定的重量為止。此處,調合槽1內被混合的混合液,藉由循環泵11攪拌。Next, the output signal of the load cell 4 is supplied by the flow regulating valve 24 until the blending weight of the phosphate stock solution becomes a specific weight. Next, the output signal of the load cell 4 is supplied by the flow rate adjusting valve 25 until the blending weight of the acetic acid stock solution becomes a specific weight. Further, by the output signal of the load cell 4, the liquid is supplied from the flow rate adjusting valve 26 until the blending weight of the nitric acid raw liquid becomes a specific weight. Here, the mixed liquid mixed in the mixing tank 1 is stirred by the circulation pump 11.

其次,藉由採樣泵3,測定被採樣的混合液之各成分濃度。因應於各原液之調合重量與各成分濃度之濃度測定值,進行磷酸原液、醋酸原液、硝酸原液、純水的補充的控制,藉由流量調節閥24、25、26、27分別自動控制而送液,以成為目標值的濃度的方式進行微調整。此處,調合槽1內被混合的混合液,再度藉由循環泵11攪拌。其次,藉由採樣泵3,測定被採樣的混合液之各成分濃度。各成分濃度的濃度測定值落入目標值的濃度範圍的場合,結束1批次之調合。其他之控制系統的機能性關連,與圖1的場合相同。Next, the concentration of each component of the sampled mixture is measured by the sampling pump 3. The control of the addition of the phosphoric acid stock solution, the acetic acid stock solution, the nitric acid stock solution, and the pure water is performed in accordance with the measured weight of each raw liquid and the concentration measurement of each component concentration, and is automatically controlled by the flow rate adjusting valves 24, 25, 26, and 27, respectively. The liquid is finely adjusted so as to be the concentration of the target value. Here, the mixed liquid mixed in the mixing tank 1 is again stirred by the circulation pump 11. Next, the concentration of each component of the sampled mixture is measured by the sampling pump 3. When the concentration measurement value of each component concentration falls within the concentration range of the target value, the mixing of one batch is completed. The functional relationship of other control systems is the same as in the case of Figure 1.

其次,針對圖6所示之第6實施型態之裝置所意圖之控制系統的機能性關連加以說明。本實施型態,為了進行批次調合,於圖2之調合槽1,替代液面高度計2而安裝測壓元件(load cell)4,正確地測定調合槽1的調合液之重量,而於多成分演算器33進行濃度測定值的正確計算、補充重量的計算以及補充重量的控制。被調合之蝕刻液,幾乎全量被送液至貯留槽或使用點,調合槽1成為空的狀態。調合槽1於空的狀態,測壓元件4檢測出在下限,藉由測壓元件4的輸出訊號,在使純水之調合重量成為特定重量之前藉由流量調節閥27送液。其次,藉由測壓元件4的輸出訊號,藉由流量調節閥24送液直到磷酸原液的調合重量成為特定的重量為止。其次,藉由測壓元件4的輸出訊號,藉由流量調節閥25送液直到醋酸原液的調合重量成為特定的重量為止。進而,藉由測壓元件4的輸出訊號,藉由流量調節閥26送液直到硝酸原液的調合重量成為特定的重量為止。此處,調合槽1內被混合的混合液,藉由循環泵11攪拌。其次,藉由採樣泵3,測定被採樣的混合液之各成分濃度。於多成分演算器33,因應於各原液之調合重量的控制與各成分濃度之濃度測定值,藉由磷酸原液、醋酸原液、硝酸原液、純水的補充重量的計算而進行補充重量之控制,藉由流量調節閥24、25、26、27分別自動控制而送液,以成為目標值的濃度的方式進行微調整。此處,調合槽1內被混合的混合液,再度藉由循環泵11攪拌。其次,藉由採樣泵3,測定被採樣的混合液之各成分濃度。各成分濃度的濃度測定值落入目標值的濃度範圍的場合,結束1批次之調合。其他之控制系統的機能性關連,與圖5的場合相同。關於圖7、圖8之控制系統的機能性關連,與圖5、圖6之說明相同,因此省略。Next, the functional relationship of the control system intended for the apparatus of the sixth embodiment shown in Fig. 6 will be described. In the present embodiment, in order to perform batch blending, a load cell 4 is attached to the blending tank 1 of FIG. 2 instead of the liquid level altimeter 2, and the weight of the blending liquid of the blending tank 1 is accurately measured. The component calculator 33 performs correct calculation of the concentration measurement value, calculation of the supplementary weight, and control of the supplementary weight. The etched liquid to be blended is almost completely fed to the storage tank or the use point, and the blending tank 1 is in an empty state. When the mixing tank 1 is in an empty state, the load cell 4 detects the lower limit, and the output signal of the load cell 4 is supplied by the flow rate adjusting valve 27 before the blending weight of the pure water becomes a specific weight. Next, the output signal of the load cell 4 is supplied by the flow regulating valve 24 until the blending weight of the phosphate stock solution becomes a specific weight. Next, the output signal of the load cell 4 is supplied by the flow rate adjusting valve 25 until the blending weight of the acetic acid stock solution becomes a specific weight. Further, by the output signal of the load cell 4, the liquid is supplied from the flow rate adjusting valve 26 until the blending weight of the nitric acid raw liquid becomes a specific weight. Here, the mixed liquid mixed in the mixing tank 1 is stirred by the circulation pump 11. Next, the concentration of each component of the sampled mixture is measured by the sampling pump 3. The multi-component calculator 33 performs the control of the supplementary weight by the calculation of the combined weight of the phosphate raw liquid, the acetic acid raw liquid, the nitric acid raw liquid, and the pure water in accordance with the control of the blending weight of each stock solution and the concentration measurement value of each component concentration. The flow rate adjustment valves 24, 25, 26, and 27 are automatically controlled to supply liquid, and are finely adjusted so as to have a target value. Here, the mixed liquid mixed in the mixing tank 1 is again stirred by the circulation pump 11. Next, the concentration of each component of the sampled mixture is measured by the sampling pump 3. When the concentration measurement value of each component concentration falls within the concentration range of the target value, the mixing of one batch is completed. The functional relationship of other control systems is the same as in the case of FIG. The functional relationship between the control systems of Figs. 7 and 8 is the same as that of Figs. 5 and 6, and therefore will be omitted.

本案發明人發現藉由如以上所述般把根據各控制機能之結果以相互補足的關連性來進行運用,可以容易實現綜合使蝕刻液組成成為一定之調合以及連續調合。The inventors of the present invention have found that by using the correlation of the respective control functions according to the correlation of the respective control functions as described above, it is possible to easily realize the integration of the etching liquid composition into a certain blending and continuous blending.

又,於以上所述,本發明不限於作為蝕刻液使用硝酸與醋酸與磷酸以及純水之溶液的場合,亦可以適用於作為蝕刻液使用磷酸與硝酸與純水之溶液、磷酸與硝酸進而包含有機酸、鹽酸、硫酸、過氯酸等至少1種之水溶液、而前述有機酸為醋酸、乙二酸之水溶液的場合等。Further, as described above, the present invention is not limited to the case where a solution of nitric acid and acetic acid with phosphoric acid or pure water is used as the etching solution, and it is also applicable to a solution of phosphoric acid and nitric acid and pure water as an etching solution, and phosphoric acid and nitric acid. An aqueous solution of at least one of an organic acid, hydrochloric acid, sulfuric acid, or perchloric acid, and the organic acid is an aqueous solution of acetic acid or oxalic acid.

1...調合槽1. . . Blending slot

2...液面高度計2. . . Liquid level altimeter

3...採樣泵3. . . Sampling pump

4...測壓元件(load cell)4. . . Load cell

11...循環泵11. . . Circulating pump

15...導電率計15. . . Conductivity meter

16...吸光光度計16. . . Absorbance photometer

17...吸光光度計(密度計)17. . . Absorbance photometer (density meter)

19...吸光光度計19. . . Absorbance photometer

20‧‧‧磷酸原液供給罐20‧‧‧phosphoric acid supply tank

21‧‧‧醋酸原液供給罐21‧‧‧Acidate supply tank

22‧‧‧硝酸原液供給罐22‧‧‧Nitrate liquid supply tank

24‧‧‧磷酸原液流量調節閥24‧‧‧phosphoric acid solution flow regulating valve

25‧‧‧醋酸原液流量調節閥25‧‧‧Acetate solution flow regulating valve

26‧‧‧硝酸原液流量調節閥26‧‧‧Nitrate liquid flow control valve

27‧‧‧純水流量調節閥27‧‧‧Pure water flow control valve

30‧‧‧導電率控制器30‧‧‧ Conductivity controller

31‧‧‧吸光度控制器31‧‧‧Absorbance controller

32‧‧‧吸光度控制器(密度控制器)32‧‧‧Absorbance controller (density controller)

33‧‧‧多成分演算器33‧‧‧Multi-component calculator

40‧‧‧吸光度控制器40‧‧‧Absorbance controller

圖1係根據本發明的第1實施型態之蝕刻液調合裝置之系統圖。Fig. 1 is a system diagram of an etching liquid blending apparatus according to a first embodiment of the present invention.

圖2係根據本發明的第2實施型態之蝕刻液調合裝置之系統圖。Fig. 2 is a system diagram of an etching liquid blending apparatus according to a second embodiment of the present invention.

圖3係根據本發明的第3實施型態之蝕刻液調合裝置之系統圖。Fig. 3 is a system diagram of an etching liquid blending apparatus according to a third embodiment of the present invention.

圖4係根據本發明的第4實施型態之蝕刻液調合裝置之系統圖。Fig. 4 is a system diagram of an etching liquid blending apparatus according to a fourth embodiment of the present invention.

圖5係根據本發明的第5實施型態之蝕刻液調合裝置之系統圖。Fig. 5 is a system diagram of an etching liquid blending apparatus according to a fifth embodiment of the present invention.

圖6係根據本發明的第6實施型態之蝕刻液調合裝置之系統圖。Fig. 6 is a system diagram of an etching liquid blending apparatus according to a sixth embodiment of the present invention.

圖7係根據本發明的第7實施型態之蝕刻液調合裝置之系統圖。Fig. 7 is a system diagram of an etching liquid blending apparatus according to a seventh embodiment of the present invention.

圖8係根據本發明的第8實施型態之蝕刻液調合裝置之系統圖。Fig. 8 is a system diagram of an etching liquid blending apparatus according to an eighth embodiment of the present invention.

圖9係顯示相關於本發明之蝕刻液的硝酸濃度與稀釋液的導電率之關係圖。Fig. 9 is a graph showing the relationship between the nitric acid concentration of the etching liquid of the present invention and the conductivity of the diluent.

圖10係顯示相關於本發明之蝕刻液的硝酸濃度與吸光度之關係圖。Fig. 10 is a graph showing the relationship between the nitric acid concentration and the absorbance of the etching liquid according to the present invention.

圖11係顯示相關於本發明之蝕刻液的水分濃度與吸光度之關係圖。Figure 11 is a graph showing the relationship between the water concentration and the absorbance of the etching liquid according to the present invention.

圖12係顯示相關於本發明之蝕刻液的磷酸濃度與吸光度之關係圖。Figure 12 is a graph showing the relationship between the phosphoric acid concentration and the absorbance of the etching solution according to the present invention.

圖13係顯示相關於本發明之蝕刻液的磷酸濃度與密度之關係圖。Figure 13 is a graph showing the relationship between the phosphoric acid concentration and the density of the etching solution according to the present invention.

1...調合槽1. . . Blending slot

2...液面高度計2. . . Liquid level altimeter

3...採樣泵3. . . Sampling pump

11...循環泵11. . . Circulating pump

12...管路12. . . Pipeline

13...除去蝕刻液中的微細粒子等之用的過濾器13. . . Filter for removing fine particles and the like in the etching liquid

14...循環攪拌用之空氣閥14. . . Air valve for circulation mixing

15...導電率計15. . . Conductivity meter

16...吸光光度計16. . . Absorbance photometer

17...吸光光度計(密度計)17. . . Absorbance photometer (density meter)

18...管路18. . . Pipeline

20...磷酸原液供給罐20. . . Phosphate stock solution tank

21...醋酸原液供給罐twenty one. . . Acetic acid stock solution tank

22...硝酸原液供給罐twenty two. . . Nitric acid raw liquid supply tank

23...N2 氣體配管twenty three. . . N 2 gas piping

24...磷酸原液流量調節閥twenty four. . . Phosphate stock flow control valve

25...醋酸原液流量調節閥25. . . Acetic acid solution flow regulating valve

26...硝酸原液流量調節閥26. . . Nitric acid raw liquid flow regulating valve

27...純水流量調節閥27. . . Pure water flow control valve

29...送液用之空氣閥29. . . Air valve for liquid supply

33...多成分演算器33. . . Multi-component calculator

34...管路34. . . Pipeline

35...管路35. . . Pipeline

36...管路36. . . Pipeline

37...管路37. . . Pipeline

38...稀釋泵38. . . Dilution pump

39...純水泵39. . . Pure water pump

Claims (8)

一種蝕刻液調合裝置,係具備:調合鋁膜用蝕刻液之調合槽、被連接於前述調合槽之管路、往前述管路送出前述蝕刻液或被使用於前述蝕刻液的調合之液之泵;藉由前述管路連接至蝕刻裝置之蝕刻液調合裝置,其特徵為具備:硝酸濃度檢測/液補給構件,其係根據藉由導電率計檢測出以純水稀釋前述調合槽內的蝕刻液之稀釋液的導電率而得的前述蝕刻液的硝酸濃度或者以吸光光度計檢測出前述蝕刻液的吸光度所得到的前述蝕刻液的硝酸濃度而將單酸原液、混酸原液或者純水之至少一種對前述調合槽補給,及水分濃度檢測/液補給構件,其係根據藉由以吸光光度計檢測前述蝕刻液所得到之前述蝕刻液的水分濃度而將單酸原液、混酸原液或者純水之至少一種對前述調合槽補給,及磷酸濃度檢測/液補給構件,其係根據藉由吸光光度計檢測前述蝕刻液之吸光度而得的前述蝕刻液的磷酸濃度或者以密度計檢測前述蝕刻液的密度所得到的前述蝕刻液的磷酸濃度而將單酸原液、混酸原液或者純水之至少一種對前述調合槽補給。 An etchant fluid blending apparatus comprising: a mixing tank for arranging an etching solution for an aluminum film; a tube connected to the mixing tank; and a pump for discharging the etching liquid or the liquid used for the etching liquid to the piping An etchant liquid blending apparatus connected to the etching apparatus by the pipeline, characterized by comprising: a nitric acid concentration detecting/liquid replenishing member, which is configured to dilute the etching liquid in the blending tank with pure water by a conductivity meter At least one of a monoacid stock solution, a mixed acid stock solution, or pure water, wherein the nitric acid concentration of the etching liquid obtained by the conductivity of the diluent or the nitric acid concentration of the etching liquid obtained by detecting the absorbance of the etching liquid by an absorption photometer The replenishing tank replenishing tank and the water concentration detecting/liquid replenishing member are at least a monoacid stock solution, a mixed acid stock solution or pure water according to a water concentration of the etching liquid obtained by detecting the etching liquid by an absorption photometer. A replenishing tank and a phosphoric acid concentration detecting/liquid replenishing member for detecting the absorption of the etching liquid by an absorption photometer Phosphoric acid concentration obtained by concentration of the etchant, or the etchant at a density densitometer detects the etching solution and the resultant single liquid acid, or a mixed acid liquid of at least one water supply to the engagement groove tone. 一種蝕刻液調合裝置,係具備:調合鋁膜用蝕刻液之調合槽、被連接於前述調合槽之管路、往前述管路送出前述蝕刻液或被使用於前述蝕刻液的調合之液之泵;藉 由前述管路連接至蝕刻裝置之蝕刻液調合裝置,其特徵為具備:由檢測出以純水稀釋前述調合槽內的蝕刻液的稀釋液的導電率之導電率計或者檢測出前述蝕刻液的硝酸濃度之吸光光度計,及檢測出前述蝕刻液的水分濃度之吸光光度計,及檢測出前述蝕刻液的磷酸濃度之吸光光度計或密度計,及成分濃度演算構件,其係檢測出硝酸濃度的前述導電率計之導電率值或者檢測出硝酸濃度之前述吸光光度計之吸光度值,及檢測出水分濃度之前述吸光光度計之吸光度值,檢測出磷酸濃度之前述吸光光度計之吸光度值或檢測出磷酸濃度之前述密度計之密度值等來藉由多成分演算法(重回歸分析法、多變量解析法)來演算前述蝕刻液的成分濃度,及液補給構件,其係將單酸原液、混酸原液及純水之至少一種補給至前述調合槽。 An etchant fluid blending apparatus comprising: a mixing tank for arranging an etching solution for an aluminum film; a tube connected to the mixing tank; and a pump for discharging the etching liquid or the liquid used for the etching liquid to the piping ;borrow An etching liquid mixing device connected to the etching device by the pipe line, comprising: a conductivity meter for detecting a conductivity of a diluent for diluting an etching liquid in the mixing tank with pure water; or detecting the etching liquid An absorbance photometer for nitric acid concentration, an absorptiometer for detecting the water concentration of the etching solution, and an absorptiometer or a densitometer for detecting the phosphoric acid concentration of the etching solution, and a component concentration calculation member for detecting a nitric acid concentration The conductivity value of the conductivity meter or the absorbance value of the absorbance photometer that detects the nitric acid concentration, and the absorbance value of the absorbance photometer that detects the water concentration, and the absorbance value of the spectrophotometer that detects the phosphoric acid concentration or The density value of the density meter of the phosphoric acid concentration is detected, and the component concentration of the etching liquid is calculated by a multi-component algorithm (heavy regression analysis method, multivariate analysis method), and a liquid replenishing member is a monoacid liquid solution. At least one of the mixed acid solution and the pure water is supplied to the aforementioned mixing tank. 如申請專利範圍第1或2項之蝕刻液調合裝置,其中前述蝕刻液為包含磷酸、硝酸之水溶液。 The etching liquid mixing device according to claim 1 or 2, wherein the etching liquid is an aqueous solution containing phosphoric acid or nitric acid. 如申請專利範圍第3項之蝕刻液調合裝置,其中前述蝕刻液係進而包含有機酸、鹽酸、硫酸、過氯酸之至少1種的水溶液。 The etching liquid mixing device according to claim 3, wherein the etching liquid further contains an aqueous solution of at least one of an organic acid, hydrochloric acid, sulfuric acid, and perchloric acid. 如申請專利範圍第4項之蝕刻液調合裝置,其中前述有機酸係醋酸、丙二酸。 The etching solution blending device according to claim 4, wherein the organic acid is acetic acid or malonic acid. 如申請專利範圍第1或2項之蝕刻液調合裝置,其中前述蝕刻液調合裝置,係連續調合方式。 The etching liquid blending device according to claim 1 or 2, wherein the etching liquid blending device is a continuous blending method. 一種蝕刻液濃度測定裝置,其特徵為具備:檢測出以純水稀釋鋁膜用蝕刻液之稀釋液的導電率之導電率計或者檢測出前述蝕刻液的硝酸濃度之吸光光度計,及檢測出前述蝕刻液的水分濃度之吸光光度計,及檢測出前述蝕刻液的磷酸濃度之吸光光度計或密度計,及成分濃度演算構件,其係由檢測出導電率之前述導電率計之導電率值或者檢測出硝酸濃度之前述吸光光度計之吸光度值、檢測出水分濃度的前述吸光光度計之吸光度值,與檢測出磷酸濃度的前述吸光光度計之吸光度值或者檢測出磷酸濃度之前述密度計之密度值來藉由多成分演算法(重回歸分析法/多變量解析法)演算前述蝕刻液的成分濃度。 An etchant concentration measuring apparatus comprising: a conductivity meter that detects a conductivity of a diluent of an etching solution for an aluminum film diluted with pure water; or an absorptiometer that detects a concentration of nitric acid of the etching solution, and detects An absorptiometer for determining a water concentration of the etching solution, an absorbance photometer or a densitometer for detecting a phosphoric acid concentration of the etching solution, and a component concentration calculating member for measuring a conductivity value of the conductivity meter of the conductivity. Or the absorbance value of the absorbance photometer of the nitric acid concentration, the absorbance value of the absorbance photometer that detects the water concentration, and the absorbance value of the spectrophotometer that detects the phosphoric acid concentration or the density meter that detects the phosphoric acid concentration. The density value is calculated by a multi-component algorithm (re-regression analysis method/multivariate analysis method). 如申請專利範圍第7項之蝕刻液濃度測定裝置,其中檢測出前述蝕刻液的硝酸濃度之吸光光度計係使用紫外線區域的波長之紫外吸光光度計。 An etchant concentration measuring apparatus according to claim 7, wherein the spectrophotometer for detecting the nitric acid concentration of the etching liquid is an ultraviolet absorption spectrophotometer using a wavelength of an ultraviolet region.
TW098112317A 2008-04-22 2009-04-14 An etching solution mixing device and an etching solution concentration measuring device TWI454872B (en)

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