TWI454587B - Sputter apparatus - Google Patents

Description

Sputtering device

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a sputtering apparatus, and more particularly to a process for reducing various process losses caused by frequently replacing an anti-film-growing shield for preventing film growth by stopping a deposition process. A sputtering device that increases productivity.

For example, a liquid crystal display (LCD), a plasma display panel (PDP), and a flat panel display such as an organic light emitting diode (OLED), or a semiconductor may undergo various methods such as thin film deposition, etching, and the like. The process is introduced as a product.

In various processes, the thin film deposition process is generally divided into two categories according to the main principles.

One is chemical vapor deposition (CVD) and the other is physical vapor deposition (PVD), which has been widely used according to the characteristics of previous processes.

In CVD, telluride ions converted from an external high-frequency power source into a plasma and having high energy are ejected from a shower head and deposited on a substrate through an electrode.

On the other hand, in a PVD called a sputtering device, ions in the plasma are applied with sufficient energy to collide with the target, and then target atoms that escape (ie, sputter) from the target are deposited onto the substrate. on.

Of course, in addition to the sputtering method, PVD also employs various methods such as electron beam evaporation (E-beam evaporation) and thermal evaporation, but it is necessary to use a target as a sputtering source to supply a deposition material to the substrate. Hereinafter, a sputtering apparatus using a sputtering method is referred to as PVD.

Conventional sputtering apparatus includes a processing chamber and a target as a sputtering source in which a sputtering-based process is performed, the sputtering source being used to provide a deposition material to a substrate placed in a deposition position.

Meanwhile, in the conventional sputtering apparatus, peeling occurs when a film having a predetermined thickness or more is deposited on a mask member and a target disposed around the target for preventing film growth, thereby causing peeling Various problems such as particles, short circuit due to a portion near the end of the glass substrate that does not require growth of the film.

In order to minimize such a problem, much effort has been made to optimize the shape, the illuminance, and the like on the surface of the mask for preventing film growth and to maximize the replacement period of the mask for preventing film growth. However, as far as is known, it is still necessary to perform frequent cleaning for a period of about 5 days to 15 days for cleaning. Further, during replacement, not only a large amount of manpower is required, but also production is restarted after the replacement of the operation of the replaced equipment, and it takes about 10 hours or more to perform various preparations such as vacuuming and heating of the chamber. Operation and stabilization of target characteristics, etc. These process losses generally reduce productivity, so countermeasures must be prepared to prevent losses.

The present invention provides a sputtering apparatus which can reduce various process losses caused by frequent replacement of a mask for preventing film growth by stopping a deposition process, thereby improving productivity.

According to an aspect of the present invention, a sputtering apparatus is provided, comprising: a processing chamber for performing a deposition process on a substrate, and including a target on an inner side thereof; and a carrier for supporting the substrate Simultaneously entering and exiting the processing chamber; and a mask for preventing film growth, moving with the carrier and being separably coupled to the carrier, and preventing deposition of the film at the edge portion of the substrate.

The mask for preventing film growth may include: a coupling body detachably coupled to the carrier; and a mask member coupled to the coupling body and including an end portion at the carrier And the target is disposed in the edge portion of the substrate.

The mask member includes a bevel on an outer side surface.

The mask member can be treated to have an embossed outer surface.

The mask for preventing film growth may be disposed in the four sides of the carrier.

The sputtering apparatus may further include: a driving roller disposed inside the processing chamber and driving the carrier when contacting an upper region or a lower region of the carrier; and a guiding member disposed opposite to the driving roller One side of the carrier is positioned between the guide and the drive roller and is used to guide the driven carrier.

The guide member can include a magnet.

The mask for preventing film growth may be selected from aluminum (Al), stainless steel, and titanium (Ti).

The sputtering apparatus may further include a mask driving unit coupled to the carrier and the mask for preventing film growth and driving the mask for preventing film growth, The mask for preventing film growth can be moved between an installation position to be disposed in the substrate and a separation position to be separated from the substrate.

The mask drive unit can be selected from the group consisting of a rotary drive, a linear motion drive, and a rotary and linear motion drive.

The sputtering apparatus may further include: a heating chamber connected to the processing chamber and preheating the substrate passing through the heating chamber; a loading interlocking vacuum chamber connected to the heating chamber; and a loading/ An unloading chamber coupled to the load lock vacuum chamber and including a load/unload unit for loading the load into the load lock vacuum chamber or unloading the load from the load lock vacuum chamber .

The load/unload unit can include a clamp for carrying the carrier.

The load/unload unit can include a robot for carrying the carrier.

The processing chamber, the heating chamber, the load lock vacuum chamber, and the loading/unloading chamber may form a production line for an in-line process.

The line for the in-line process may include at least one recycle line, and a buffer chamber may be provided at the loop of the loop for reversing the direction of the carrier or the substrate.

The processing chamber may include a plurality of processing chambers arranged in a radial direction, and a transfer chamber is in the form of a cluster, the cluster being disposed between the heating chamber and the plurality of processing chambers.

In order to fully understand the present invention and its advantages, reference should be made to the accompanying drawings and the accompanying drawings.

Hereinafter, the present invention will be described in detail by explaining exemplary embodiments with reference to the attached drawings. The same reference numbers in the drawings denote the same elements.

Before the description with reference to the accompanying drawings, the substrate to be described below may be used for, for example, a liquid crystal display (LCD), a plasma display panel (PDP), an organic light emitting diode (organic light emitting diode); A substrate of a flat panel display such as OLED), a substrate for a solar cell, or a substrate for a semiconductor wafer, however, the term thereof will be uniformly standardized as a substrate.

Fig. 1 is a schematic view showing the structure of a sputtering apparatus according to a first exemplary embodiment of the present invention, and Fig. 2 is a cross-sectional view showing the structure of a target region shown in Fig. 1.

As shown, the sputtering apparatus in this exemplary embodiment includes a processing chamber 110 in which a deposition process is performed on a substrate and a target 140 is provided on one inner side; the carrier 120 can support the substrate while supporting the substrate Access to the processing chamber 110; and a mask 160 for preventing film growth, is detachably coupled to the carrier 120 and moves with the carrier to prevent deposition of the film on the edge portions of the substrate.

The processing chamber 110 forms an outer appearance and a wall body and is sealed to maintain a high degree of vacuum during the deposition process. To this end, as schematically shown in Fig. 1, a gate valve 111 is provided on one side of the process chamber 110, and a vacuum pump 112 is provided on one side of the gate valve 111. Therefore, if the vacuum pump 112 generates a vacuum pressure when the gate valve 111 is opened, the inside of the processing chamber 110 can maintain a high degree of vacuum.

Although not shown in detail, an opening is formed in one side wall of the processing chamber 110 such that the carrier 120 and the substrate can enter and exit the processing chamber 110 via the opening. The carrier 120 and the substrate can be accessed through one opening, but can also be separately accessed through the two openings. This opening is provided with a gate valve for maintaining a vacuum.

Further, a target 140 is provided as a sputtering source on one inner side of the processing chamber 110 to provide a deposition material to the substrate. In FIG. 1, the deposition material is directly sputtered from the target 140 onto the substrate, but is not limited thereto. Alternatively, a separate mask can be placed between the target 140 and the substrate.

As shown in FIG. 2, the magnet unit 150 is disposed on one side of the target 140, and generates a magnetic field for deposition between the target 140 and the substrate. Typically, the target 140 forms a cathode with the area of the magnet unit 150 and the area of the substrate forms the anode.

In the exemplary embodiment, target 140 is provided in the form of a rotating target 140. To this end, the target rotating unit 145 for rotating the target 140 is coupled to one side of the target 140. The target rotating unit 145 may be disposed to be exposed to the outside of the process chamber 110 and include an electric motor in which a power source 142 to be described later may be disposed. Of course, the invention is not limited to the first and second figures. Alternatively, the target 140 can be a planar stationary target (not shown) and, in contrast to the drawings, a plurality of targets can be provided.

Between the target 140 and the magnet unit 150, a cathode backing plate 141 is provided in the form of a surrounding magnet unit 150 for setting the target 140 and also for making the magnet unit 150 airtight. The cathode pad 141 is connected to a radio frequency (RF) or direct current (DC) power source 142.

Referring to FIG. 2, the magnet unit 150 is disposed on one side of the target 140, in other words, inside the cathode pad 141, and is used to generate a magnetic field for deposition between the target 140 and the substrate.

The magnet unit 150 includes a plurality of magnets 151 to 153 and a base plate 154 for supporting the magnets 151 to 153. In the exemplary embodiment, the magnets 151 to 153 are integrally supported on the bottom plate 154, but are not limited thereto. Alternatively, the magnets 151 to 153 may be separately supported on the bottom plate 154, respectively, and their positions relative to the bottom plate 154 may also vary. This facilitates easy control of the flow or intensity of the magnetic field.

The magnets 151 to 153 include a center magnet 151 provided in a central region of the bottom plate 154, and external magnets 152 and 153 disposed outside the center magnet 151. With this configuration, the outer magnets 152 and 153 protrude from the bottom plate 154 to have a height lower than the center magnet 151 or have a smaller volume than the center magnet 151. This is designed with the flow or intensity of the magnetic field in mind, but can be changed as needed. Moreover, the outer magnets 152 and 153 can also have different sizes.

Next, the carrier 120 is placed in the processing chamber 110 while being supported by the substrate. When the target 140 is disposed inside the processing chamber 110, the carrier 120 can enter and exit the processing chamber 110. Therefore, the processing chamber 110 is provided with an opening through which the carrier 120 can enter and exit.

To drive (or move) the carrier 120, a drive roller 131 and a guide 133 are provided. The drive roller 131 is disposed in a lower region within the processing chamber 110 and contacts a lower region of the carrier 120 to drive the carrier 120. The guide member 133 is disposed on a side opposite to the driving roller 131, and the carrier 120 is positioned between the guiding member 133 and the driving roller 131, and is used to guide the driven carrier 120. At this time, the guide 133 may be a magnet. Further, the heater 135 may be supported by the heater holder 136 on one side of the carrier 120.

At the same time, the mask member 160 for preventing film growth is coupled to the carrier 120 and moved together with the carrier 120, and prevents the film from being deposited on the edge portion of the substrate.

Of course, the conventional sputtering apparatus is also provided with a mask (not shown) for preventing film growth. However, since a conventional mask for preventing film growth is fixed at a predetermined position in the process chamber 110, if a film having a predetermined thickness or more is deposited to a mask for preventing film growth On the other hand, it must be frequently replaced with a cycle of about 5 days to 15 days for cleaning. During the replacement, not only a lot of manpower is required, but also the production is restarted after the equipment is stopped for replacement, and it takes about 10 hours or more to perform various preparations such as chamber vacuuming, heating operation, and target feature stabilization. And so on. These process losses generally reduce productivity.

However, in the exemplary embodiment, the mask 160 for preventing film growth is coupled to the carrier 120 that is capable of entering and exiting the processing chamber 110 such that the carrier 120 is ready for use before or after the processing chamber 110 enters the processing chamber 110. In the state, the mask member 160 for preventing film growth can be replaced as needed. Therefore, the mask member 160 for preventing film growth can be replaced without stopping the deposition process, which, contrary to the conventional case, can reduce various process losses due to frequent replacement, thereby improving productivity.

As shown in FIG. 1, the mask member 160 for preventing film growth includes a coupling body 161 and a mask member 162, the coupling body 161 is detachably coupled to the carrier 120, and the mask member 162 is coupled to the coupling body 161. One end portion is disposed at an edge portion of the substrate between the carrier 120 and the target 140.

A mask 160 for preventing film growth may be disposed on four sides of the carrier 120. To this end, the mask 160 for preventing film growth may be provided in the form of a single rectangular loop or in the form of four bars respectively coupled to the four sides of the carrier 120.

The coupling between the carrier 120 and the coupling body 161 can be achieved by various methods such as bolting, sticking, latching, and the like.

Further, an outer side surface of the mask member 162 (i.e., an outer side surface of a portion substantially for masking the substrate) is formed with a slope 162a. The bevel 162a is a design that reduces the weight of the mask 160 for preventing film growth, but is not essential.

The coupling body 161 and the mask member 162 may be integrally formed, but are not limited thereto. At least the mask member 162 may be selected from aluminum (Al), stainless steel, and titanium (Ti), but is not limited thereto. Alternatively, various alloys may be used in addition to the above materials.

With this configuration, the operation of the sputtering apparatus is as follows.

The substrate is loaded onto the carrier 120 outside of the processing chamber 110 and the carrier 120 is placed into the processing chamber 110 so that the substrate can be placed in the deposition position. At this time, the mask member 160 for preventing film growth has masked the edge region of the substrate.

The substrate is heated by the heater 135 when the substrate is placed in place. At the same time or before and after heating, the processing chamber 110 is filled with, for example, argon (Ar), and then the processing chamber 110 is sealed to maintain a high degree of vacuum.

When the deposition process is ready, the power source 142 applies a negative pressure to the target 140, and electrons released from the target 140 collide with argon (Ar), thereby ionizing the argon (Ar) gas.

The ionized argon gas accelerates toward the target 140 under the potential difference and collides with the surface of the target 140. At this time, atoms (ie, deposition materials) of the target 140 are generated from the target 140, and these atoms fall onto the deposition surface of the substrate, so that a deposition process can be performed on the substrate.

After the deposition process is completed, the vacuum in the processing chamber is released, and the substrate is withdrawn along with the carrier 120 via the outlet while the outlet is opened. Then, the new substrate enters the processing chamber and the above process is repeated.

During the repetition of the above deposition process, when the time point at which the mask member 160 for preventing film growth needs to be cleaned, it may be used as needed in the standby state before the carrier 120 enters the process chamber 110 or after leaving the process chamber 110. The new mask for preventing film growth replaces the mask 160 for preventing film growth without stopping the deposition process as in the conventional case. Therefore, the mask member 160 for preventing film growth can be replaced without stopping the deposition process, so that, contrary to the conventional case, various process losses can be reduced, thereby improving productivity.

With the structure and operation of the sputtering apparatus according to the present invention, various process losses caused by frequently replacing the mask member 160 for preventing film growth due to the stop of the deposition process can be reduced, thereby improving productivity.

3 to 7 respectively show alternative exemplary embodiments of the mask for preventing film growth or the mask for driving the mask for preventing film growth.

As shown in FIG. 3, the mask member 160a can be treated to have an embossed outer surface E. If the mask member 160a is processed to have an embossed outer surface E, the embossed portion can reduce deposition of the deposition material on the outer surface of the mask member 160a, and thus the mask for preventing film growth can be advantageously extended The replacement period of the member 160a.

4 to 7 show alternative examples in which the mask driving units 170b to 170e are connected to the carrier 120 and the masks 160b to 160e for preventing film growth, and are driven for preventing the film. The grown mask members 160b to 160e are movable between the disposed position to be disposed in the substrate and the separated position to be separated from the substrate, for the mask members 160b to 160e for preventing film growth.

Referring to Fig. 4, the mask driving unit 170b is realized by, for example, a rotary driver 170b, and the rotary driver 170b can be realized by a hinge or the like. The mask member 160b for preventing film growth is rotated from a broken line to a solid line in the direction of the arrow by the rotary driver 170b, thereby being disposed on the side of the substrate on which film growth is prevented.

Referring to Fig. 5, the mask driving unit 170c is realized by, for example, a rotary and linear motion driver 170c. The mask member 160c for preventing film growth is linearly moved in the direction of the arrow by the rotary and linear motion driver 170c and then rotated to be disposed on the side of the substrate on which the film growth is prevented.

Referring to Fig. 6, the mask driving unit 170d is realized by, for example, a linear motion driver 170d. The mask member 160d for preventing film growth is linearly moved in the longitudinal direction of the substrate (such as the direction of the arrow) by the linear motion driver 170d, and is disposed on the side of the substrate on which the film growth is prevented. In the case shown in Fig. 6, a predetermined space A is required to move the mask member 160d for preventing film growth back and to be placed on the carrier 120d.

Referring to Fig. 7, the mask driving unit 170e is realized by, for example, a linear motion driver 170e. The mask member 160d for preventing film growth is linearly moved in a direction (such as an arrow direction) intersecting the longitudinal direction of the substrate by the mask driving unit 170e, thereby being disposed on the side of the substrate on which film growth is prevented.

As a result, even if any of the structures shown in Figs. 3 to 7 and Fig. 1 is applied, it is sufficient for the present invention to be caused by frequently reducing the mask member 160 for preventing film growth by stopping the deposition process. Various process losses, thereby increasing productivity.

Fig. 8 is a schematic view showing the structure of a sputtering apparatus according to a second exemplary embodiment of the present invention.

In the exemplary embodiment, the sputtering apparatus includes: a heating chamber 181 connected to the processing chamber 110 and preheating the substrate passing through the heating chamber 181; a loading interlocking vacuum chamber 182 connected to the heating chamber 181; Load/unload chamber 183, coupled to load lock vacuum chamber 182, and having a load for loading carrier 120 into load lock vacuum chamber 182 and unloading carrier 120 from load lock vacuum chamber 182 In/Unload unit 184.

As shown, the process chamber 110, the heating chamber 181, the load lock chamber 182, and the load/unload chamber 183 can form a production line for an in-line deposition process.

Meanwhile, the loading/unloading unit 184 provided in the loading/unloading chamber 183 can be realized by the jig 184 for carrying the carrier 120.

According to this, the carrier 120 loaded with the substrate is carried into the processing chamber 110 via the loading/unloading chamber 183, the loading interlocking vacuum chamber 182, and the heating chamber 181 by the jig 184, and then the substrate in the processing chamber 110 Perform a deposition process. After the deposition process is completed, the carrier 120 can be removed in the reverse order.

Fig. 9 is a schematic view showing the structure of a sputtering apparatus according to a third exemplary embodiment of the present invention.

In the exemplary embodiment, the sputtering apparatus has a structure in which the load lock vacuum chamber 182a is disposed at one side of the process chamber 110 and a pair of load/unload chambers 183a are disposed in the process chamber 110. The opposite side. In this case, a production line for an in-line process is not formed.

In this case, the loading/unloading unit 184a provided in the loading/unloading chamber 183a can be realized by the robot 184a for carrying the carrier 120. Further, the cassette carrier 185 can be disposed around the pair of loading/unloading chambers 183, respectively.

Fig. 10 is a schematic view showing the structure of a sputtering apparatus according to a fourth exemplary embodiment of the present invention.

In the exemplary embodiment, the sputtering apparatus has a structure in which, similar to the one shown in Fig. 8, the processing chamber 110b, the heating chamber 181b, the loading interlocking vacuum chamber 182b, and the loading/unloading The chamber 183b forms a production line for the in-line deposition process, but forms a circulation line in the direction of the arrow. In this exemplary embodiment, two loop lines are disclosed.

In this case, there is a portion in which the direction of the arrow of the deposition process is reversed, and a buffer chamber 186b may be additionally provided in the portion for reversing the direction of the carrier 120 or the substrate.

Fig. 11 is a schematic view showing the structure of a sputtering apparatus according to a fifth exemplary embodiment of the present invention.

In this exemplary embodiment, the sputtering apparatus has a structure in which a plurality of processing chambers 110c are arranged in the radial direction.

In this case, the transfer chamber 187c may be disposed in clusters between the heating chamber 181c and the plurality of processing chambers 110c. The transfer chamber 187c is for transferring the carrier or substrate from the heating chamber 181c to the processing chamber 110c by an internal robot (not shown). The structure shown in Fig. 11 is advantageously disposed in a relatively narrow space, thereby additionally having the effect of reducing the footprint.

As a result, even if any of the structures shown in Figs. 8 to 11 and Fig. 1 is applied, as long as the mask member 160 for preventing film growth is coupled to the carrier 120 shown in Fig. 1, it is sufficient for the present invention to The various process losses caused by the frequent replacement of the mask member 160 for preventing film growth due to the stop of the deposition process are reduced, thereby improving productivity.

As described above, productivity can be improved by reducing various process losses caused by frequently replacing the mask for preventing film growth by stopping the deposition process.

While the invention has been particularly shown and described with reference to the embodiments of the present invention, it is understood that various changes in form and detail may be made to the invention without departing from the spirit and scope of the invention.

110. . . Processing room

110b. . . Processing room

110c. . . Processing room

111. . . gate

112. . . Vacuum pump

120. . . vehicle

120d. . . vehicle

131. . . Drive wheel

133. . . Guide

135. . . Heater

136. . . Heater bracket

140. . . Target / rotating target

141. . . Cathode pad

142. . . power supply

145. . . Target rotation unit

150. . . Magnet unit

151. . . Center magnet

152, 153. . . External magnet

154. . . Bottom plate

160. . . Mask for preventing film growth

160a. . . Mask member

160b, 160c, 160d, 160e. . . Mask for preventing film growth

161. . . Coupling ontology

162. . . Mask member

162a. . . Inclined surface

170b, 170c, 170d, 170e. . . Mask drive unit

181. . . Heating chamber

181b. . . Heating chamber

181c. . . Heating chamber

182. . . Loading interlocking vacuum chamber

182a. . . Loading interlocking vacuum chamber

182b. . . Loading interlocking vacuum chamber

183. . . Loading/unloading room

183a. . . Loading/unloading room

183b. . . Loading/unloading room

184. . . Load/unload unit/fixture

184a. . . Load/unload unit/manipulator

185. . . Cartridge carrier

186b. . . Buffer chamber

187c. . . Transfer room

A. . . Reservation space

E. . . Embossed outer surface

S. . . Edge portion

1 is a schematic view showing the structure of a sputtering apparatus according to a first exemplary embodiment of the present invention;

Figure 2 is a cross-sectional view showing the structure of the target region shown in Figure 1;

3 to 7 respectively show alternative exemplary embodiments of a mask for preventing film growth or a mask for driving a mask for preventing film growth;

8 is a schematic view showing the structure of a sputtering apparatus according to a second exemplary embodiment of the present invention;

Figure 9 is a schematic view showing the structure of a sputtering apparatus according to a third exemplary embodiment of the present invention;

10 is a schematic view showing the structure of a sputtering apparatus according to a fourth exemplary embodiment of the present invention;

Fig. 11 is a schematic view showing the structure of a sputtering apparatus according to a fifth exemplary embodiment of the present invention.

110. . . Processing room

111. . . gate

112. . . Vacuum pump

120. . . vehicle

131. . . Drive wheel

133. . . Guide

135. . . Heater

136. . . Heater bracket

140. . . Target / rotating target

145. . . Target rotation unit

160. . . Mask for preventing film growth

161. . . Coupling ontology

162. . . Mask member

162a. . . Inclined surface

Claims (16)

A sputtering apparatus, comprising: a processing chamber for performing a deposition process on a substrate, and including a target on an inner side thereof; and a carrier that enters and exits the processing chamber while supporting the substrate; A mask for preventing film growth moves with the carrier and is separably coupled to the carrier and prevents a film from depositing at an edge portion of the substrate. A sputtering apparatus according to claim 1, wherein the mask member for preventing the film growth comprises: a coupling body detachably coupled to the carrier; and a mask member coupled to the coupling a body and including an end portion between the carrier and the target and disposed at the edge portion of the substrate. A sputtering apparatus according to claim 2, wherein the mask member comprises a slope on an outer side surface. A sputtering apparatus according to claim 2, wherein the mask member is treated to have an embossed outer surface. The sputtering apparatus according to claim 1, wherein the mask for preventing film growth is disposed in the four sides of the carrier. The sputtering apparatus according to claim 1, further comprising: a driving roller disposed inside the processing chamber and driving the carrier while contacting an upper region or a lower region of the carrier; and And a guiding member disposed on the opposite side of the driving roller, the carrier is located between the guiding member and the driving roller, and is used for guiding the driven vehicle. A sputtering apparatus according to claim 6, wherein the guiding member comprises a magnet. The sputtering apparatus according to claim 1, wherein the mask for preventing film growth is selected from the group consisting of aluminum, stainless steel, and titanium. The sputtering apparatus according to claim 1, further comprising a mask driving unit connected to the carrier and the mask for preventing film growth and driving the mask The mask for preventing film growth is such that the mask for preventing film growth can be moved between a set position to be disposed in the substrate and a separated position to be separated from the substrate. The sputtering apparatus of claim 9, wherein the mask driving unit is selected from the group consisting of a rotary driver, a linear motion driver, and a rotary and linear motion driver. The sputtering apparatus according to claim 1, further comprising: a heating chamber connected to the processing chamber and preheating the substrate passing through the heating chamber; a loading interlocking vacuum chamber, connecting To the heating chamber; and a loading/unloading chamber connected to the load lock vacuum chamber and including means for loading the load into the load lock vacuum chamber or from the load lock vacuum chamber Unload the load/unload unit of the vehicle. A sputtering apparatus according to claim 11, wherein the loading/unloading unit includes a jig for carrying the carrier. A sputtering apparatus according to claim 11, wherein the loading/unloading unit comprises a robot for carrying the carrier. A sputtering apparatus according to claim 11, characterized in that the processing chamber, the addition The hot chamber, the load lock vacuum chamber, and the load/unload chamber form a production line for an in-line process. The sputtering apparatus according to claim 14, wherein the production line for the in-line process includes at least one circulation line, and a buffer chamber is further disposed at a circulation point of the circulation line for inverting the The orientation of the carrier or the substrate. The sputtering apparatus according to claim 11, wherein the processing chamber comprises a plurality of processing chambers arranged in a radial direction, and a transfer chamber is in the form of a cluster, the cluster is disposed in the heating chamber and the plurality Between the processing rooms.