TWI450656B - Printed circuit board and method for manufacturing same - Google Patents
Printed circuit board and method for manufacturing same Download PDFInfo
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- TWI450656B TWI450656B TW101140431A TW101140431A TWI450656B TW I450656 B TWI450656 B TW I450656B TW 101140431 A TW101140431 A TW 101140431A TW 101140431 A TW101140431 A TW 101140431A TW I450656 B TWI450656 B TW I450656B
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Description
本發明涉及電路板製作領域,尤其涉及一種電路板及其製作方法。 The present invention relates to the field of circuit board manufacturing, and in particular, to a circuit board and a manufacturing method thereof.
在電路板的製作過程中,通常需要製作導電孔將兩層或者多層導電線路導通。所述電路板的製作過程通常包括:首先,在核心基板中形成通孔,核心基板包括絕緣層及形成於絕緣層相對兩側的銅箔層。然後,採用蝕刻的方式將絕緣層兩側的銅箔層蝕刻去除。接著,在絕緣層的表面及通孔的內壁沉積形成導電種子層,然後將通孔內電鍍填充導電材料,並同時在絕緣層的兩表面均電鍍形成導電線路。由於絕緣層的厚度較大,為了使得通孔完全被填充,從而電鍍時間較長,導致形成在絕緣層表面的導電線路層的厚度較大。從而,現有技術的製作方法不利於電路板中細線路的形成。 In the manufacturing process of the circuit board, it is usually required to make conductive holes to conduct two or more conductive lines. The manufacturing process of the circuit board generally includes: firstly, forming a via hole in the core substrate, the core substrate comprising an insulating layer and a copper foil layer formed on opposite sides of the insulating layer. Then, the copper foil layers on both sides of the insulating layer are etched away by etching. Then, a conductive seed layer is deposited on the surface of the insulating layer and the inner wall of the through hole, and then the through hole is plated with a conductive material, and at the same time, both surfaces of the insulating layer are plated to form a conductive line. Since the thickness of the insulating layer is large, in order to make the via hole completely filled, the plating time is long, resulting in a large thickness of the conductive wiring layer formed on the surface of the insulating layer. Thus, the prior art fabrication method is not conducive to the formation of fine lines in the circuit board.
有鑑於此,提供一種電路板的製作及其方法,可以得到具有密集分佈的導電線路的電路板實屬必要。 In view of the above, it is necessary to provide a circuit board and a method thereof, and it is possible to obtain a circuit board having densely distributed conductive lines.
一種電路板,包括第一介電層、第一導電線路層及第二導電線路層。第一導電線路層和第二導電線路層形成於第一介電層的相對 兩表面。在第一介電層內形成有通孔,所述通孔內形成有導電金屬材料。所述導電金屬材料具有垂直於通孔軸線方向的第一端面和第二端面,所述第一端面和第二端面均位於第一通孔內,所述第一端面形成有第一導電帽,所述第二端面形成有第二導電帽,部分第一導電帽從第一介電層的第一表面一側延伸至通孔內,部分第二導電帽從第二表面一側延伸至通孔內。 A circuit board includes a first dielectric layer, a first conductive circuit layer, and a second conductive circuit layer. The first conductive circuit layer and the second conductive circuit layer are formed on the first dielectric layer Both surfaces. A through hole is formed in the first dielectric layer, and a conductive metal material is formed in the through hole. The conductive metal material has a first end surface and a second end surface perpendicular to the axial direction of the through hole, and the first end surface and the second end surface are both located in the first through hole, and the first end surface is formed with the first conductive cap. The second end surface is formed with a second conductive cap extending from a first surface side of the first dielectric layer into the through hole, and a portion of the second conductive cap extending from the second surface side to the through hole Inside.
一種電路板的製作方法,包括步驟提供核心基板,所述核心基板包括第一介電層、第一銅箔層和第二銅箔層,第一介電層具有相對的第一表面和第二表面,第一銅箔層形成於第一表面,第二銅箔層形成於第二表面;在核心基板內形成至少一個通孔;在通孔內形成導電金屬材料,並同時在第一銅箔層表面形成第一電鍍銅層,在第二銅箔層表面形成第二電鍍銅層;去除第一銅箔層、第一電鍍銅層、第二銅箔層及第二電鍍銅層,並去除與第一電鍍銅層和第二電鍍銅層相鄰的部分導電金屬材料,剩餘的導電金屬材料包括相對的第一端面和第二端面;以及在第一介電層表面形成第一導電線路層,在第二介電層表面形成第二導電線路層,並在導電金屬材料的第一端面形成第一導電帽,並在第二端面形成第二導電帽,部分第一導電帽從第一表面一側延伸至通孔內,部分第二導電帽從第二表面一側延伸至通孔內。本技術方案提供的電路板及其製作方法,先在核心基板中形成通孔之後,對所述通孔進行電鍍填充。然後,將核心基板的銅箔層及銅箔層上的電鍍層全部蝕刻去除,保留位於通孔內的導電金屬材料。然後再電鍍形成導電線路層。由於在形成導電線路時,形成通孔內的導電金屬材料已經形成,且與形成通孔內的導電金屬材料同時形成的電鍍層及核心基板的銅箔層均被去除,可以在形成導電線路時,無 需進行長時間電鍍。相比於現有技術的製作方法,本技術方案可以減小導電線路的厚度,從而可以用於具有高佈線密度的電路板的製作。 A method of fabricating a circuit board, comprising the steps of providing a core substrate, the core substrate comprising a first dielectric layer, a first copper foil layer and a second copper foil layer, the first dielectric layer having opposite first surfaces and second a surface, a first copper foil layer is formed on the first surface, a second copper foil layer is formed on the second surface; at least one through hole is formed in the core substrate; a conductive metal material is formed in the through hole, and simultaneously in the first copper foil Forming a first electroplated copper layer on the surface of the layer, forming a second electroplated copper layer on the surface of the second copper foil layer; removing the first copper foil layer, the first electroplated copper layer, the second copper foil layer and the second electroplated copper layer, and removing a portion of the conductive metal material adjacent to the first plated copper layer and the second plated copper layer, the remaining conductive metal material including opposing first and second end faces; and forming a first conductive circuit layer on the surface of the first dielectric layer Forming a second conductive circuit layer on the surface of the second dielectric layer, forming a first conductive cap on the first end surface of the conductive metal material, and forming a second conductive cap on the second end surface, the first conductive cap from the first surface One side extends into the through hole A second electrically conductive cap portion extending from the second surface side to the through hole. The circuit board provided by the technical solution and the manufacturing method thereof are characterized in that after the through holes are formed in the core substrate, the through holes are plated and filled. Then, the copper foil layer of the core substrate and the plating layer on the copper foil layer are all etched away, and the conductive metal material located in the via hole is retained. Then electroplating is performed to form a conductive wiring layer. Since the conductive metal material formed in the through hole has been formed when the conductive line is formed, and the plating layer formed simultaneously with the conductive metal material forming the through hole and the copper foil layer of the core substrate are removed, the conductive line can be formed. ,no Long-term plating is required. Compared with the prior art fabrication method, the present technical solution can reduce the thickness of the conductive line, and thus can be used for the fabrication of a circuit board having a high wiring density.
100‧‧‧電路板 100‧‧‧ boards
110‧‧‧核心基板 110‧‧‧ core substrate
112‧‧‧第一介電層 112‧‧‧First dielectric layer
1121‧‧‧第一表面 1121‧‧‧ first surface
1122‧‧‧第二表面 1122‧‧‧ second surface
111‧‧‧第一銅箔層 111‧‧‧First copper foil layer
113‧‧‧第二銅箔層 113‧‧‧Second copper foil layer
114‧‧‧通孔 114‧‧‧through hole
115‧‧‧導電金屬材料 115‧‧‧ Conductive metal materials
1151‧‧‧第一端面 1151‧‧‧ first end face
1152‧‧‧第二端面 1152‧‧‧second end face
1161‧‧‧化學鍍銅層 1161‧‧‧ electroless copper plating
117‧‧‧第一電鍍銅層 117‧‧‧First electroplated copper layer
118‧‧‧第二電鍍銅層 118‧‧‧Second electroplated copper layer
122‧‧‧第一導電種子層 122‧‧‧First conductive seed layer
123‧‧‧第一光致抗蝕劑圖形 123‧‧‧First photoresist pattern
124‧‧‧第三電鍍銅層 124‧‧‧ Third electroplated copper layer
132‧‧‧第二導電種子層 132‧‧‧Second conductive seed layer
133‧‧‧第二光致抗蝕劑圖形 133‧‧‧Second photoresist pattern
134‧‧‧第四電鍍銅層 134‧‧‧4th electroplated copper layer
120‧‧‧第一導電線路層 120‧‧‧First conductive circuit layer
121‧‧‧第一導電帽 121‧‧‧First conductive cap
130‧‧‧第二導電線路層 130‧‧‧Second conductive circuit layer
131‧‧‧第二導電帽 131‧‧‧Second conductive cap
140‧‧‧第二介電層 140‧‧‧Second dielectric layer
141‧‧‧第一盲孔 141‧‧‧ first blind hole
142‧‧‧第二盲孔 142‧‧‧Second blind hole
143‧‧‧第一導電盲孔 143‧‧‧First conductive blind hole
144‧‧‧第二導電盲孔 144‧‧‧Second conductive blind hole
150‧‧‧第三介電層 150‧‧‧ third dielectric layer
151‧‧‧第三盲孔 151‧‧‧ third blind hole
153‧‧‧第三導電盲孔 153‧‧‧3rd conductive blind hole
160‧‧‧第三導電線路層 160‧‧‧ Third conductive circuit layer
161‧‧‧第一電性接觸墊 161‧‧‧First electrical contact pads
162‧‧‧第一保護層 162‧‧‧First protective layer
163‧‧‧焊接材料 163‧‧‧Welding materials
170‧‧‧第四導電線路層 170‧‧‧fourth conductive layer
171‧‧‧第二電性接觸墊 171‧‧‧Second electrical contact pads
172‧‧‧第二保護層 172‧‧‧Second protective layer
180‧‧‧第一防焊層 180‧‧‧First solder mask
181‧‧‧第一開口 181‧‧‧ first opening
190‧‧‧第二防焊層 190‧‧‧Second solder mask
191‧‧‧第二開口 191‧‧‧ second opening
圖1為本技術方案第一實施例提供的核心基板的剖面示意圖。 FIG. 1 is a schematic cross-sectional view of a core substrate according to a first embodiment of the present technical solution.
圖2為圖1的核心基板中形成通孔後的剖面示意圖。 2 is a schematic cross-sectional view showing a through hole formed in the core substrate of FIG. 1.
圖3為圖2中的通孔中形成導電金屬材料並在第一介電層的兩相對表面形成第一電鍍銅層和第二電鍍銅層後的剖面示意圖。 3 is a schematic cross-sectional view showing the formation of a conductive metal material in the via hole of FIG. 2 and forming a first plated copper layer and a second plated copper layer on opposite surfaces of the first dielectric layer.
圖4為圖3去除第一電鍍銅層和第二電鍍銅層後的剖面示意圖。 4 is a schematic cross-sectional view of FIG. 3 after removing the first electroplated copper layer and the second electroplated copper layer.
圖5至圖7為在圖4的第一介電層表面形成第一導電線路層、第二導電線路層、並在導電金屬材料兩端分別形成第一導電帽和第二導電帽後的剖面示意圖。 5 to FIG. 7 are cross-sectional views showing the first conductive circuit layer, the second conductive circuit layer, and the first conductive cap and the second conductive cap respectively formed on the surface of the first dielectric layer of FIG. schematic diagram.
圖8為圖7的第一導電線路層一側形成第三介電層並在第二導電線路層一側形成第二介電層後的剖面示意圖。 8 is a cross-sectional view showing a third dielectric layer formed on one side of the first conductive wiring layer of FIG. 7 and a second dielectric layer formed on one side of the second conductive wiring layer.
圖9為在圖8的第二介電層內形成第一導電盲孔和第二導電盲孔,並在第二介電層表面形成第三導電線路層,在第三介電層內形成第三導電盲孔並在第三介電層表面形成第四導電線路後的剖面示意圖。 9 is a first conductive via and a second conductive via formed in the second dielectric layer of FIG. 8 and forming a third conductive layer on the surface of the second dielectric layer, forming a third dielectric layer A schematic cross-sectional view of a three-conductivity blind via and a fourth conductive trace formed on the surface of the third dielectric layer.
圖10為圖9的第三導電線路層及第四導電線路層表面形成防焊層後的剖面示意圖。 FIG. 10 is a schematic cross-sectional view showing the surface of the third conductive wiring layer and the fourth conductive wiring layer of FIG. 9 after the solder resist layer is formed.
圖11為本技術方案實施例制得的電路板的剖面示意圖。 FIG. 11 is a cross-sectional view of a circuit board prepared according to an embodiment of the present technical solution.
本技術方案提供的電路板製作方法包括如下步驟: The circuit board manufacturing method provided by the technical solution includes the following steps:
第一步,請參閱圖1,提供核心基板110。 In the first step, referring to FIG. 1, a core substrate 110 is provided.
本實施例中,核心基板110為雙面覆銅基板,其包括第一銅箔層111、第一介電層112及第二銅箔層113。第一介電層112具有相對的第一表面1121及第二表面1122。第一銅箔層111位於第一介電層112的第一表面1121,第二銅箔層113位於第一介電層112的第二表面1122。 In this embodiment, the core substrate 110 is a double-sided copper-clad substrate including a first copper foil layer 111, a first dielectric layer 112, and a second copper foil layer 113. The first dielectric layer 112 has opposing first and second surfaces 1121, 1122. The first copper foil layer 111 is located on the first surface 1121 of the first dielectric layer 112, and the second copper foil layer 113 is located on the second surface 1122 of the first dielectric layer 112.
第二步,請參閱圖2,在核心基板110內形成至少一個通孔114。 In the second step, referring to FIG. 2, at least one through hole 114 is formed in the core substrate 110.
本步驟中,通孔114可以採用鐳射燒蝕的方式形成。通孔114貫穿第一銅箔層111、第一介電層112及第二銅箔層113。通孔114也可以採用機械鑽孔的方式形成。通孔114的個數可以為一個,也可以為多個。圖2中以形成一個通孔114為例進行說明。 In this step, the through holes 114 may be formed by laser ablation. The through hole 114 penetrates through the first copper foil layer 111, the first dielectric layer 112, and the second copper foil layer 113. The through hole 114 can also be formed by mechanical drilling. The number of the through holes 114 may be one or plural. In FIG. 2, a through hole 114 is formed as an example for description.
第三步,請參閱圖3,在通孔114內形成導電金屬材料115,並同時在第一介電層112的第一表面1121形成第一電鍍銅層,並在第一介電層112的第二表面1122形成第二電鍍銅層118。 In the third step, referring to FIG. 3, a conductive metal material 115 is formed in the via hole 114, and a first copper plating layer is formed on the first surface 1121 of the first dielectric layer 112, and is formed on the first dielectric layer 112. The second surface 1122 forms a second electroplated copper layer 118.
本實施例中,填充導電金屬材料115及形成第一電鍍銅層117和第二電鍍銅層118可以採用如下方法: In this embodiment, filling the conductive metal material 115 and forming the first copper plating layer 117 and the second copper plating layer 118 may adopt the following methods:
首先,在通孔114的內壁、第一銅箔層111的表面及第二銅箔層113的表面形成化學鍍銅層1161。 First, an electroless copper plating layer 1161 is formed on the inner wall of the through hole 114, the surface of the first copper foil layer 111, and the surface of the second copper foil layer 113.
具體的,採用化學鍍銅的方式,形成化學鍍銅層1161。 Specifically, an electroless copper plating layer 1161 is formed by electroless copper plating.
其次,採用電鍍的方式,在第一銅箔層111表面的化學鍍銅層1161上形成第一電鍍銅層117,在第二銅箔層113表面的化學鍍銅 層1161上形成第二電鍍銅層118,在通孔114的內壁的化學鍍銅層1161表面形成導電金屬材料115。導電金屬材料115與第一電鍍銅層117一體成型,導電金屬材料115完全填滿通孔114,導電金屬材料115遠離第二銅箔層113的表面與第一電鍍銅層117的表面平齊。 Next, a first electroplated copper layer 117 is formed on the electroless copper plating layer 1161 on the surface of the first copper foil layer 111 by electroplating, and electroless copper plating on the surface of the second copper foil layer 113 is performed. A second electroplated copper layer 118 is formed on the layer 1161, and a conductive metal material 115 is formed on the surface of the electroless copper plating layer 1161 of the inner wall of the through hole 114. The conductive metal material 115 is integrally formed with the first electroplated copper layer 117. The conductive metal material 115 completely fills the through hole 114, and the surface of the conductive metal material 115 away from the second copper foil layer 113 is flush with the surface of the first electroplated copper layer 117.
第四步,請一併參閱圖4,去除第一表面1121的第一銅箔層111、第一電鍍銅層117與化學鍍銅層1161,並去除第二表面1122的第二銅箔層113、第二電鍍銅層118與化學鍍銅層1161,並一併去除與第一電鍍銅層117和第二電鍍銅層118相接連的部分導電金屬材料115。 In the fourth step, referring to FIG. 4, the first copper foil layer 111 of the first surface 1121, the first copper plating layer 117 and the electroless copper plating layer 1161 are removed, and the second copper foil layer 113 of the second surface 1122 is removed. The second electroplated copper layer 118 and the electroless copper plating layer 1161 are combined to remove a portion of the conductive metal material 115 connected to the first electroplated copper layer 117 and the second electroplated copper layer 118.
本步驟中,採用蝕刻的方式去除第一表面1121的第一銅箔層111、第一電鍍銅層117與化學鍍銅層1161,並去除第二表面1122的第二銅箔層113、第二電鍍銅層118與化學鍍銅層1161,並一併去除與第一電鍍銅層117和第二電鍍銅層118相接連的導電金屬材料115。通過控制蝕刻的時間,使得第一銅箔層111、第一電鍍銅層117及第二表面1122的第二銅箔層113、第二電鍍銅層118被完全去除,並且與第一電鍍銅層117和第二電鍍銅層118相接連的部分導電金屬材料115也被去除。剩餘的導電金屬材料115位於通孔114內,並不凸出與第一介電層112的第一表面1121和第二表面1122。剩餘的導電金屬材料115具有相對的第一端面1151和第二端面1152。其中,第一端面1151靠近第一表面1121一側,第二端面1152靠近第二表面1122一側。本實施例中,第一端面1151和第二端面1152為曲面。第一端面1151和第二端面1152均位於通孔114內。 In this step, the first copper foil layer 111 of the first surface 1121, the first copper plating layer 117 and the electroless copper plating layer 1161 are removed by etching, and the second copper foil layer 113 and the second surface of the second surface 1122 are removed. The electroplated copper layer 118 and the electroless copper plating layer 1161 are used together to remove the conductive metal material 115 connected to the first electroplated copper layer 117 and the second electroplated copper layer 118. By controlling the etching time, the first copper foil layer 111, the first copper plating layer 117 and the second copper foil layer 113 of the second surface 1122, the second copper plating layer 118 are completely removed, and the first copper plating layer is A portion of the conductive metal material 115 that is in contact with the second electroplated copper layer 118 is also removed. The remaining conductive metal material 115 is located within the via 114 and does not protrude from the first surface 1121 and the second surface 1122 of the first dielectric layer 112. The remaining conductive metal material 115 has opposing first end faces 1151 and second end faces 1152. The first end surface 1151 is adjacent to the first surface 1121 side, and the second end surface 1152 is adjacent to the second surface 1122 side. In this embodiment, the first end surface 1151 and the second end surface 1152 are curved surfaces. The first end surface 1151 and the second end surface 1152 are both located in the through hole 114.
第五步,請一併參閱圖5至圖7,在第一介電層112的第一表面1121形成第一導電線路層120,並同時在第一端面1151上形成第一導電帽121。在第一介電層112的第二表面1122形成第二導電線路層130,並同時在第二端面1152上形成第二導電帽131。 In the fifth step, referring to FIG. 5 to FIG. 7 , the first conductive circuit layer 120 is formed on the first surface 1121 of the first dielectric layer 112 , and at the same time, the first conductive cap 121 is formed on the first end surface 1151 . A second conductive wiring layer 130 is formed on the second surface 1122 of the first dielectric layer 112, and a second conductive cap 131 is formed on the second end surface 1152 at the same time.
本步驟具體可採用如下方法: This step can specifically adopt the following methods:
首先,採用化學鍍銅的方式,在第一表面1121及第一端面1151上形成第一導電種子層122,在第二表面1122及第二端面1152上形成第二導電種子層132。 First, a first conductive seed layer 122 is formed on the first surface 1121 and the first end surface 1151 by electroless copper plating, and a second conductive seed layer 132 is formed on the second surface 1122 and the second end surface 1152.
可以理解的是,也可以採用其他方法,如黑化或者化學吸附導電粒子等,在第一表面1121、第一端面1151、第二表面1122及第二端面1152形成第一導電種子層122和第二導電種子層132。 It can be understood that other methods, such as blackening or chemisorption of conductive particles, etc., may be employed to form the first conductive seed layer 122 and the first surface 1121, the first end surface 1151, the second surface 1122, and the second end surface 1152. Two conductive seed layers 132.
其次,先在第一導電種子層122和第二導電種子層132的表面分別形成光致抗蝕劑層。並採用曝光及顯影的方式,將與欲形成第一導電線路層120及第一導電帽121對應的部分去除得到第一光致抗蝕劑圖形123,將與欲形成第二導電線路層130及第二導電帽131對應的部分去除得到第二光致抗蝕劑圖形133。 Next, a photoresist layer is formed on the surfaces of the first conductive seed layer 122 and the second conductive seed layer 132, respectively. And exposing and developing the portion corresponding to the first conductive circuit layer 120 and the first conductive cap 121 to remove the first photoresist pattern 123, and forming the second conductive circuit layer 130 and The corresponding portion of the second conductive cap 131 is removed to obtain a second photoresist pattern 133.
接著,在從第一光致抗蝕劑圖形123的空隙露出的第一導電種子層122表面形成第三電鍍銅層124,在從第二光致抗蝕劑圖形133露出的第二導電種子層132表面形成第四電鍍銅層134。形成於第一端面1151上的第三電鍍銅層124部分延伸至通孔114內,部分凸出於第一表面1121。形成於第二端面1152上的第四電鍍銅層134部分延伸至通孔114內,部分凸出於第二表面1122。 Next, a third electroplated copper layer 124 is formed on the surface of the first conductive seed layer 122 exposed from the void of the first photoresist pattern 123, and the second conductive seed layer is exposed from the second photoresist pattern 133. A fourth electroplated copper layer 134 is formed on the surface of 132. The third electroplated copper layer 124 formed on the first end surface 1151 extends partially into the through hole 114 and partially protrudes from the first surface 1121. The fourth electroplated copper layer 134 formed on the second end face 1152 extends partially into the through hole 114 and partially protrudes from the second surface 1122.
最後,採用剝膜的方式,去除第一光致抗蝕劑圖形123和第二光 致抗蝕劑圖形133,並採用微蝕的方式,去除原被第一光致抗蝕劑圖形123覆蓋的第一導電種子層122,去除原被第二光致抗蝕劑圖形133覆蓋的第二導電種子層132,從而位於第一表面1121上的第一導電種子層122及形成在其上的第三電鍍銅層124共同構成第一導電線路層120。位於第二表面1122上的第二導電種子層132及形成在其上的第四電鍍銅層134共同構成第二導電線路層130。位於第一端面1151上的第一導電種子層122及形成在其上的第三電鍍銅層124形成第一導電帽121。位於第二端面1152上的第二導電種子層132及形成在其上的第四電鍍銅層134共同構成第二導電帽131。 Finally, the first photoresist pattern 123 and the second light are removed by stripping. Resist pattern 133 is formed, and the first conductive seed layer 122 originally covered by the first photoresist pattern 123 is removed by microetching to remove the first layer covered by the second photoresist pattern 133. The second conductive seed layer 132 is such that the first conductive seed layer 122 on the first surface 1121 and the third electroplated copper layer 124 formed thereon together constitute the first conductive wiring layer 120. The second conductive seed layer 132 on the second surface 1122 and the fourth electroplated copper layer 134 formed thereon collectively constitute the second conductive wiring layer 130. The first conductive seed layer 122 on the first end face 1151 and the third electroplated copper layer 124 formed thereon form the first conductive cap 121. The second conductive seed layer 132 on the second end face 1152 and the fourth electroplated copper layer 134 formed thereon collectively constitute the second conductive cap 131.
第一導電線路層120及第二導電線路層130均包括多條導電線路。第一導電帽121、剩餘的導電金屬材料115及第二導電帽131共同構成導電埋孔101。第一導電線路層120與第二導電線路層130通過導電埋孔101相互電導通。 The first conductive circuit layer 120 and the second conductive circuit layer 130 each include a plurality of conductive lines. The first conductive cap 121, the remaining conductive metal material 115 and the second conductive cap 131 together form a conductive buried hole 101. The first conductive circuit layer 120 and the second conductive circuit layer 130 are electrically connected to each other through the conductive buried holes 101.
第六步,請參閱圖8,在第一導電線路層120表面、第一導電帽121的表面及從第一導電線路層120的空隙露出的第一介電層112表面壓合形成第二介電層140。在第二導電線路層130表面、第二導電帽131表面及從第二導電線路層130的空隙露出的第一介電層112表面壓合形成第三介電層150。 In the sixth step, referring to FIG. 8, the surface of the first conductive circuit layer 120, the surface of the first conductive cap 121, and the surface of the first dielectric layer 112 exposed from the gap of the first conductive circuit layer 120 are pressed to form a second dielectric layer. Electrical layer 140. A third dielectric layer 150 is formed on the surface of the second conductive wiring layer 130, the surface of the second conductive cap 131, and the surface of the first dielectric layer 112 exposed from the void of the second conductive wiring layer 130.
第七步,請參閱圖9,在第二介電層140內形成與第一導電帽121相對應的第一盲孔141及與第一導電線路層120的部分導電線路相對應的第二盲孔142。在第三介電層150內形成與第二導電線路層130的部分導電線路相對應的第三盲孔151。 In the seventh step, referring to FIG. 9, a first blind via 141 corresponding to the first conductive cap 121 and a second blind corresponding to a portion of the conductive trace of the first conductive trace layer 120 are formed in the second dielectric layer 140. Hole 142. A third blind via 151 corresponding to a portion of the conductive trace of the second conductive trace layer 130 is formed in the third dielectric layer 150.
本步驟中,採用鐳射燒蝕的方式,在第二介電層140內形成與第 一導電帽121相對應的第一盲孔141及與第一導電線路層120中的部分導電線路相對應的第二盲孔142。在第三介電層150內形成與第二導電線路層130的部分導電線路相對應的第三盲孔151。部分第一導電帽121從第一盲孔141露出。第一導電線路層120中的部分導電線路從第二盲孔142露出。第二導電線路層130中的部分導電線路從第三盲孔151露出。 In this step, laser ablation is used to form and form in the second dielectric layer 140. A first blind hole 141 corresponding to the conductive cap 121 and a second blind hole 142 corresponding to a part of the conductive lines in the first conductive circuit layer 120. A third blind via 151 corresponding to a portion of the conductive trace of the second conductive trace layer 130 is formed in the third dielectric layer 150. A portion of the first conductive cap 121 is exposed from the first blind hole 141. A portion of the conductive lines in the first conductive wiring layer 120 are exposed from the second blind vias 142. A portion of the conductive lines in the second conductive wiring layer 130 are exposed from the third blind vias 151.
可以理解的是,在此步驟之後,還可以進一步包括去膠渣(desmear)的步驟。以將各盲孔內部的膠渣去除,以免在後續進行電鍍時,影響形成的盲孔的信賴性。 It can be understood that after this step, the step of desmear can be further included. The glue inside the blind holes is removed to avoid the reliability of the formed blind holes when the subsequent plating is performed.
第八步,請參閱圖9,在第一盲孔141內形成導電金屬材料以得到第一導電盲孔143,在第二盲孔142內形成導電金屬材料以得到第二導電盲孔144,並在第二介電層140表面形成第三導電線路層160,第三導電線路層160與導電埋孔101通過第一導電盲孔143相互電導通,第一導電線路層120與第三導電線路層160通過第二導電盲孔144相互電導通。在第三盲孔151內形成導電金屬材料以得到第三導電盲孔153,並在第三介電層150的表面形成第四導電線路層170。第二導電線路層130與第四導電線路層170通過第三導電盲孔153相互電導通。第一導電線路層120通過第一導電盲孔143及導電埋孔101與第二導電線路層130相互電導通。 In the eighth step, referring to FIG. 9, a conductive metal material is formed in the first blind via 141 to obtain a first conductive via 143, and a conductive metal material is formed in the second blind via 142 to obtain a second conductive via 144. A third conductive circuit layer 160 is formed on the surface of the second dielectric layer 140. The third conductive circuit layer 160 and the conductive buried holes 101 are electrically connected to each other through the first conductive blind vias 143, and the first conductive circuit layer 120 and the third conductive circuit layer. The 160 is electrically conducted to each other through the second conductive blind vias 144. A conductive metal material is formed in the third blind via 151 to obtain a third conductive via 153, and a fourth conductive wiring layer 170 is formed on the surface of the third dielectric layer 150. The second conductive circuit layer 130 and the fourth conductive circuit layer 170 are electrically connected to each other through the third conductive via 153. The first conductive circuit layer 120 is electrically connected to the second conductive circuit layer 130 through the first conductive via 143 and the conductive buried via 101.
本步驟具體方法可以為:首先,在第二介電層140的表面、第三介電層150的表面、第一盲孔141的內壁、第二盲孔142的內壁及第三盲孔151的內壁形成化學鍍銅層。然後,在第二介電層140的表面形成與第三導電線路層160形狀互補的光致抗蝕劑圖形,在第三介電層150的表面形成與第四導電線路層170形狀互補的光致 抗蝕劑圖形。再次,採用電鍍的方式在從光致抗蝕劑圖形露出的化學鍍銅層的表面進行電鍍銅,從而得到第一導電盲孔143、第二導電盲孔144、第三導電盲孔153第三導電線路層160及第四導電線路層170。最後,採用剝膜的方式去除光致抗蝕劑圖形,並採用微蝕的方式去除原被光致抗蝕劑圖形覆蓋的化學鍍銅層。 The specific method of the step may be: first, the surface of the second dielectric layer 140, the surface of the third dielectric layer 150, the inner wall of the first blind via 141, the inner wall of the second blind via 142, and the third blind via. An electroless copper plating layer is formed on the inner wall of 151. Then, a photoresist pattern complementary to the shape of the third conductive wiring layer 160 is formed on the surface of the second dielectric layer 140, and a light complementary to the shape of the fourth conductive wiring layer 170 is formed on the surface of the third dielectric layer 150. To Resist pattern. Again, electroplating is performed on the surface of the electroless copper plating layer exposed from the photoresist pattern by electroplating, thereby obtaining a first conductive blind via 143, a second conductive via 144, and a third conductive via 153. Conductive circuit layer 160 and fourth conductive circuit layer 170. Finally, the photoresist pattern is removed by stripping, and the electroless copper layer originally covered by the photoresist pattern is removed by microetching.
其中,第三導電線路層160包括多個用於與外界進行電連接的第一電性接觸墊161,第四導電線路層170包括多個用於與外界進行電連接的第二電性接觸墊171。 The third conductive circuit layer 160 includes a plurality of first electrical contact pads 161 for electrical connection with the outside, and the fourth conductive circuit layer 170 includes a plurality of second electrical contact pads for electrical connection with the outside world. 171.
第九步,請參閱圖10,在第三導電線路層160的表面及第二介電層140的表面形成第一防焊層180,所述第一防焊層180內具有與多個第一電性接觸墊161一一對應的多個第一開口181,每個第一電性接觸墊161從對應的第一開口露出。在第四導電線路層170的表面及第三介電層150的表面形成第二防焊層190,所述第二防焊層190內具有與多個第二電性接觸墊171一一對應的多個第二開口191,每個第二電性接觸墊171從對應的第二開口191露出。 In the ninth step, referring to FIG. 10, a first solder resist layer 180 is formed on the surface of the third conductive circuit layer 160 and the surface of the second dielectric layer 140, and the first solder resist layer 180 has a plurality of first The electrical contact pads 161 have a plurality of first openings 181 corresponding to each other, and each of the first electrical contact pads 161 is exposed from the corresponding first opening. Forming a second solder resist layer 190 on the surface of the fourth conductive circuit layer 170 and the surface of the third dielectric layer 150. The second solder resist layer 190 has a one-to-one correspondence with the plurality of second electrical contact pads 171. A plurality of second openings 191, each of the second electrical contact pads 171, are exposed from the corresponding second openings 191.
第十步,請參閱圖11,在第一電性接觸墊161從第一開口181露出的表面形成第一保護層162,並在第一保護層162表面形成焊接材料163。每個焊接材料163填充對應的第一開口181,並凸出於對應的第一開口181。即每個焊接材料163凸出於第一防焊層180遠離第二介電層140的表面。在第二電性接觸墊171從第二開口191露出的表面形成第二保護層172,得到電路板100。 In the tenth step, referring to FIG. 11 , the first protective layer 162 is formed on the surface of the first electrical contact pad 161 exposed from the first opening 181 , and the solder material 163 is formed on the surface of the first protective layer 162 . Each of the solder materials 163 fills a corresponding first opening 181 and protrudes from the corresponding first opening 181. That is, each solder material 163 protrudes from the surface of the first solder resist layer 180 away from the second dielectric layer 140. A second protective layer 172 is formed on a surface of the second electrical contact pad 171 exposed from the second opening 191 to obtain the circuit board 100.
本實施例中,所述第一保護層162及第二保護層172可以為錫、鉛、銀、金、鎳、鈀等金屬或其合金的單層結構,也可以為上述金屬中兩種或者兩種以上的多層結構。第一保護層162及第二保護 層172也可以為有機保焊層(OSP)。當第一保護層162及第二保護層172為金屬時,可以採用化學鍍的方式形成。所述第一保護層162及第二保護層172為有機保焊層時,可以採用化學方法形成。 In this embodiment, the first protective layer 162 and the second protective layer 172 may be a single layer structure of a metal such as tin, lead, silver, gold, nickel, palladium or the like, or an alloy thereof, or may be two of the above metals or Two or more multilayer structures. First protective layer 162 and second protection Layer 172 can also be an organic solder mask (OSP). When the first protective layer 162 and the second protective layer 172 are made of metal, they may be formed by electroless plating. When the first protective layer 162 and the second protective layer 172 are organic solder resist layers, they may be formed by a chemical method.
所述焊接材料163的材質可以為錫、鉛或銅,或者為錫、鉛或銅的合金。 The material of the solder material 163 may be tin, lead or copper, or an alloy of tin, lead or copper.
可以理解的是,在本實施例中,可以僅在第二導電線路層130的一側進行增層製作,而不在第一導電線路層120的一側進行增層製作,即並不形成第二介電層140、第三導電線路層160及第一防焊層180。本實施例提供的電路板製作方法,也可以僅用於製作包括第一導電線路層120和第二導電線路層130的雙面電路板。即只進行第一步至第五步的操作即可。 It can be understood that, in this embodiment, the build-up can be performed only on one side of the second conductive circuit layer 130, and the build-up is not performed on one side of the first conductive circuit layer 120, that is, the second layer is not formed. The dielectric layer 140, the third conductive wiring layer 160, and the first solder resist layer 180. The circuit board manufacturing method provided in this embodiment may also be used only for fabricating a double-sided circuit board including the first conductive wiring layer 120 and the second conductive wiring layer 130. That is, only the first step to the fifth step can be performed.
請參閱圖11,本技術方案提供一種由第一實施例的製作方法得到的電路板100,電路板100包括第一介電層112、第二介電層140、第三介電層150、第一導電線路層120、第二導電線路層130、第三導電線路層160及第四導電線路層170。 The circuit board 100 includes a first dielectric layer 112, a second dielectric layer 140, and a third dielectric layer 150, A conductive circuit layer 120, a second conductive circuit layer 130, a third conductive circuit layer 160, and a fourth conductive circuit layer 170.
第一導電線路層120和第二導電線路層130形成於第一介電層112的相對兩表面。第二介電層140形成於第一導電線路層120的表面及第一介電層112遠離第二導電線路層130的表面。第三介電層150形成於第二導電線路層130的表面及第一介電層112遠離第一導電線路層120的表面。 The first conductive wiring layer 120 and the second conductive wiring layer 130 are formed on opposite surfaces of the first dielectric layer 112. The second dielectric layer 140 is formed on the surface of the first conductive wiring layer 120 and the surface of the first dielectric layer 112 away from the second conductive wiring layer 130. The third dielectric layer 150 is formed on the surface of the second conductive wiring layer 130 and the surface of the first dielectric layer 112 away from the first conductive wiring layer 120.
第一導電線路層120由依次設置的第一導電種子層122及第三電鍍銅層124共同構成。第一導電種子層122靠近第一介電層112。第 二導電線路層130由第二導電種子層132及第四電鍍銅層134共同構成。第二導電種子層132靠近第一介電層112。 The first conductive circuit layer 120 is composed of a first conductive seed layer 122 and a third copper plating layer 124 which are sequentially disposed. The first conductive seed layer 122 is adjacent to the first dielectric layer 112. First The second conductive circuit layer 130 is composed of a second conductive seed layer 132 and a fourth electroplated copper layer 134. The second conductive seed layer 132 is adjacent to the first dielectric layer 112.
在第一介電層112內形成有通孔114。通孔114內具有導電金屬材料115。導電金屬材料115垂直於通孔114軸線方向的兩端分別連接有第一導電帽121和第二導電帽131。部分第一導電帽121從第一介電層112的第一表面1121一側延伸至通孔114內。部分第二導電帽131從第二表面1122一側延伸至通孔114內。第一導電帽121、導電金屬材料115及第二導電帽131共同構成導電埋孔101。在導電金屬材料115與通孔114的內壁之間,還形成有化學鍍銅層。 A through hole 114 is formed in the first dielectric layer 112. The through hole 114 has a conductive metal material 115 therein. The first conductive cap 121 and the second conductive cap 131 are respectively connected to the two ends of the conductive metal material 115 perpendicular to the axial direction of the through hole 114. A portion of the first conductive cap 121 extends from a side of the first surface 1121 of the first dielectric layer 112 into the through hole 114. A portion of the second conductive cap 131 extends from the side of the second surface 1122 into the through hole 114. The first conductive cap 121, the conductive metal material 115 and the second conductive cap 131 together form a conductive buried hole 101. An electroless copper plating layer is further formed between the conductive metal material 115 and the inner wall of the through hole 114.
第三導電線路層160形成於第二介電層140遠離第一介電層112的表面,第四導電線路層170形成於第三介電層150遠離第一介電層112的表面。 The third conductive circuit layer 160 is formed on the surface of the second dielectric layer 140 away from the first dielectric layer 112 , and the fourth conductive circuit layer 170 is formed on the surface of the third dielectric layer 150 away from the first dielectric layer 112 .
第二介電層140內形成與第一導電帽121相對應電連通的第一導電盲孔143及與第一導電線路層120的部分導電線路相對應的第二導電盲孔144。第三介電層150內形成與第二導電線路層130的部分導電線路相對應的第三導電盲孔153。第三導電線路層160與導電埋孔101通過第一導電盲孔143相互電導通,第一導電線路層120與第三導電線路層160通過第二導電盲孔144相互電導通。第二導電線路層130與第四導電線路層170通過第三導電盲孔153相互電導通。第三導電線路層160通過第三導電盲孔153及導電埋孔101與第二導電線路層130相互電導通。第三導電線路層160包括多個第一電性接觸墊161,第四導電線路層170包括多個第二電性接觸墊171。 A first conductive via 143 electrically connected to the first conductive cap 121 and a second conductive via 144 corresponding to a portion of the conductive trace of the first conductive trace layer 120 are formed in the second dielectric layer 140. A third conductive via 153 corresponding to a portion of the conductive trace of the second conductive trace layer 130 is formed in the third dielectric layer 150. The third conductive circuit layer 160 and the conductive buried vias 101 are electrically connected to each other through the first conductive vias 143, and the first conductive circuit layer 120 and the third conductive circuit layer 160 are electrically connected to each other through the second conductive vias 144. The second conductive circuit layer 130 and the fourth conductive circuit layer 170 are electrically connected to each other through the third conductive via 153. The third conductive circuit layer 160 is electrically connected to the second conductive circuit layer 130 through the third conductive via 153 and the conductive buried via 101. The third conductive circuit layer 160 includes a plurality of first electrical contact pads 161, and the fourth conductive circuit layer 170 includes a plurality of second electrical contact pads 171.
電路板100還包括第一防焊層180、第二防焊層190、第一保護層 162、焊接材料163及第二保護層172。 The circuit board 100 further includes a first solder resist layer 180, a second solder resist layer 190, and a first protective layer. 162. The solder material 163 and the second protective layer 172.
第一防焊層180形成在第三導電線路層160的表面及第二介電層140的表面,所述第一防焊層180內具有與多個第一電性接觸墊161一一對應的多個第一開口181,每個第一電性接觸墊161從對應的第一開口181露出。第二防焊層190形成在第四導電線路層170的表面及第三介電層150的表面,所述第二防焊層190內具有與多個第二電性接觸墊171一一對應的多個第二開口191,每個第二電性接觸墊171從對應的第二開口191露出。 The first solder resist layer 180 is formed on the surface of the third conductive circuit layer 160 and the surface of the second dielectric layer 140. The first solder resist layer 180 has a one-to-one correspondence with the plurality of first electrical contact pads 161. A plurality of first openings 181, each of the first electrical contact pads 161 being exposed from the corresponding first opening 181. The second solder resist layer 190 is formed on the surface of the fourth conductive circuit layer 170 and the surface of the third dielectric layer 150. The second solder resist layer 190 has a one-to-one correspondence with the plurality of second electrical contact pads 171. A plurality of second openings 191, each of the second electrical contact pads 171, are exposed from the corresponding second openings 191.
第一保護層162形成在第一電性接觸墊161從第一開口181露出的表面,焊接材料163形成在第一保護層162表面。每個焊接材料163填充對應的第一開口181,並凸出於對應的第一開口181。即每個焊接材料163凸出於第一防焊層180遠離第二介電層140的表面。第二保護層172形成在第二電性接觸墊171從第二開口191露出的表面。 The first protective layer 162 is formed on a surface of the first electrical contact pad 161 exposed from the first opening 181, and the solder material 163 is formed on the surface of the first protective layer 162. Each of the solder materials 163 fills a corresponding first opening 181 and protrudes from the corresponding first opening 181. That is, each solder material 163 protrudes from the surface of the first solder resist layer 180 away from the second dielectric layer 140. The second protective layer 172 is formed on a surface of the second electrical contact pad 171 exposed from the second opening 191.
本實施例中,所述第一保護層162及第二保護層172可以為錫、鉛、銀、金、鎳、鈀等金屬或其合金的單層結構,也可以為上述金屬中兩種或者兩種以上的多層結構。第一保護層162及第二保護層172也可以為有機保焊層(OSP)。所述焊接材料163的材質可以為錫、鉛或銅,或者為錫、鉛或銅的合金。 In this embodiment, the first protective layer 162 and the second protective layer 172 may be a single layer structure of a metal such as tin, lead, silver, gold, nickel, palladium or the like, or an alloy thereof, or may be two of the above metals or Two or more multilayer structures. The first protective layer 162 and the second protective layer 172 may also be an organic solder resist layer (OSP). The material of the solder material 163 may be tin, lead or copper, or an alloy of tin, lead or copper.
可以理解的是,本實施例的電路板100,可以為僅在第二導電線路層130一側進行增層後得到的結構,即不包括有第二介電層140、第三導電線路層160及第一防焊層180。 It can be understood that the circuit board 100 of the present embodiment may be a structure obtained by adding only the side of the second conductive circuit layer 130, that is, the second dielectric layer 140 and the third conductive circuit layer 160 are not included. And a first solder resist layer 180.
本技術方案提供的電路板及其製作方法,先在核心基板中形成通 孔之後,對所述通孔進行電鍍填充。然後,將核心基板的銅箔層及銅箔層上的電鍍層全部蝕刻去除,保留位於通孔內的導電金屬材料。然後在電鍍形成導電線路層。由於在形成導電線路時,形成通孔內的導電金屬材料已經形成,且與形成通孔內的導電金屬材料同時形成的電鍍層及核心基板的銅箔層均被去除,可以在形成導電線路時,無需進行長時間電鍍。相較於先前技術的製作方法,本技術方案可以減小導電線路的厚度,從而可以用於具有高佈線密度的電路板的製作。 The circuit board provided by the technical solution and the manufacturing method thereof are first formed in the core substrate After the holes, the through holes are plated and filled. Then, the copper foil layer of the core substrate and the plating layer on the copper foil layer are all etched away, and the conductive metal material located in the via hole is retained. A conductive wiring layer is then formed by electroplating. Since the conductive metal material formed in the through hole has been formed when the conductive line is formed, and the plating layer formed simultaneously with the conductive metal material forming the through hole and the copper foil layer of the core substrate are removed, the conductive line can be formed. No long-term plating is required. Compared with the prior art fabrication method, the present technical solution can reduce the thickness of the conductive line, and thus can be used for the fabrication of a circuit board having a high wiring density.
惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
100‧‧‧電路板 100‧‧‧ boards
112‧‧‧第一介電層 112‧‧‧First dielectric layer
120‧‧‧第一導電線路層 120‧‧‧First conductive circuit layer
130‧‧‧第二導電線路層 130‧‧‧Second conductive circuit layer
140‧‧‧第二介電層 140‧‧‧Second dielectric layer
160‧‧‧第三導電線路層 160‧‧‧ Third conductive circuit layer
161‧‧‧第一電性接觸墊 161‧‧‧First electrical contact pads
162‧‧‧第一保護層 162‧‧‧First protective layer
163‧‧‧焊接材料 163‧‧‧Welding materials
170‧‧‧第四導電線路層 170‧‧‧fourth conductive layer
171‧‧‧第二電性接觸墊 171‧‧‧Second electrical contact pads
172‧‧‧第二保護層 172‧‧‧Second protective layer
180‧‧‧第一防焊層 180‧‧‧First solder mask
190‧‧‧第二防焊層 190‧‧‧Second solder mask
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