TWI445040B - - Google Patents

Info

Publication number
TWI445040B
TWI445040B TW100149971A TW100149971A TWI445040B TW I445040 B TWI445040 B TW I445040B TW 100149971 A TW100149971 A TW 100149971A TW 100149971 A TW100149971 A TW 100149971A TW I445040 B TWI445040 B TW I445040B
Authority
TW
Taiwan
Application number
TW100149971A
Other versions
TW201318024A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201110319250.8A external-priority patent/CN102355792B/zh
Priority claimed from CN2011103192527A external-priority patent/CN102395243A/zh
Application filed filed Critical
Publication of TW201318024A publication Critical patent/TW201318024A/zh
Application granted granted Critical
Publication of TWI445040B publication Critical patent/TWI445040B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW100149971A 2011-10-19 2011-12-30 改進等離子均勻性和效率的電感耦合等離子裝置 TW201318024A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201110319250.8A CN102355792B (zh) 2011-10-19 2011-10-19 改进等离子均匀性和效率的电感耦合等离子装置
CN2011103192527A CN102395243A (zh) 2011-10-19 2011-10-19 改进等离子均匀性和效率的电感耦合等离子装置

Publications (2)

Publication Number Publication Date
TW201318024A TW201318024A (zh) 2013-05-01
TWI445040B true TWI445040B (zh) 2014-07-11

Family

ID=48136315

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100149971A TW201318024A (zh) 2011-10-19 2011-12-30 改進等離子均勻性和效率的電感耦合等離子裝置

Country Status (4)

Country Link
US (1) US9095038B2 (zh)
JP (1) JP5607699B2 (zh)
KR (2) KR20130043062A (zh)
TW (1) TW201318024A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI768406B (zh) * 2019-08-27 2022-06-21 大陸商中微半導體設備（上海）股份有限公司 改善氣體均一分佈的電漿反應裝置
TWI819432B (zh) * 2021-01-04 2023-10-21 大陸商江蘇魯汶儀器有限公司 改善蝕刻均勻性的雙擋板裝置

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CN103796413B (zh) * 2012-11-01 2017-05-03 中微半导体设备(上海)有限公司 等离子反应器及制作半导体基片的方法
KR101383291B1 (ko) * 2012-06-20 2014-04-10 주식회사 유진테크 기판 처리 장치
US20140166618A1 (en) * 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US10553398B2 (en) * 2013-09-06 2020-02-04 Applied Materials, Inc. Power deposition control in inductively coupled plasma (ICP) reactors
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
KR101535155B1 (ko) * 2014-01-09 2015-07-09 주식회사 유진테크 기판 처리장치
CN107306473B (zh) * 2016-04-25 2019-04-30 中微半导体设备(上海)股份有限公司 一种半导体处理装置及处理基片的方法
KR101798373B1 (ko) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
JP7131916B2 (ja) * 2017-03-31 2022-09-06 芝浦メカトロニクス株式会社 プラズマ処理装置
TWI633585B (zh) * 2017-03-31 2018-08-21 漢民科技股份有限公司 用於半導體製程之氣體噴射器與頂板之組合及成膜裝置
KR101856689B1 (ko) * 2017-10-23 2018-05-14 주식회사 기가레인 승강하는 유도부를 포함하는 기판 처리 장치
KR101987577B1 (ko) * 2018-01-24 2019-06-10 주식회사 기가레인 승강하는 유도부와 연동하는 배기조절부를 포함하는 기판 처리 장치
KR101987576B1 (ko) * 2018-01-24 2019-06-10 주식회사 기가레인 승강하는 유도부와 연동하는 연동부를 포함하는 기판 처리 장치
US12012652B2 (en) * 2018-05-21 2024-06-18 Applied Materials, Inc. Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination
JP7186032B2 (ja) * 2018-07-27 2022-12-08 東京エレクトロン株式会社 成膜装置及び成膜方法
US11615946B2 (en) * 2018-07-31 2023-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Baffle plate for controlling wafer uniformity and methods for making the same
JP7190894B2 (ja) * 2018-12-21 2022-12-16 昭和電工株式会社 ＳｉＣ化学気相成長装置
US20200234920A1 (en) * 2019-01-22 2020-07-23 Lam Research Corporation Coil and window for plasma processing system
US11515122B2 (en) * 2019-03-19 2022-11-29 Tokyo Electron Limited System and methods for VHF plasma processing
CN114695042A (zh) * 2020-12-28 2022-07-01 中微半导体设备(上海)股份有限公司 射频调节装置、等离子体处理设备及射频电场调节方法

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JPH0729890A (ja) * 1993-07-08 1995-01-31 Kokusai Electric Co Ltd プラズマ発生装置
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5846373A (en) * 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
KR20010024504A (ko) * 1997-10-15 2001-03-26 히가시 데쓰로 플라즈마의 밀도분포를 조정하기 위한 장치 및 방법
JP2000331993A (ja) * 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
JP2001267248A (ja) * 2000-03-15 2001-09-28 Shibaura Mechatronics Corp 半導体処理装置
US6761796B2 (en) * 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
US20040194890A1 (en) * 2001-09-28 2004-10-07 Tokyo Electron Limited Hybrid plasma processing apparatus
JP4330315B2 (ja) * 2002-03-29 2009-09-16 東京エレクトロン株式会社 プラズマ処理装置
US20030047536A1 (en) * 2002-10-02 2003-03-13 Johnson Wayne L. Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
US20050241767A1 (en) 2004-04-30 2005-11-03 Ferris David S Multi-piece baffle plate assembly for a plasma processing system
KR100790392B1 (ko) * 2004-11-12 2008-01-02 삼성전자주식회사 반도체 제조장치
KR100683174B1 (ko) * 2005-06-17 2007-02-15 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템
KR100774521B1 (ko) 2005-07-19 2007-11-08 주식회사 디엠에스 다중 안테나 코일군이 구비된 유도결합 플라즈마 반응장치
TWI435663B (zh) * 2006-05-22 2014-04-21 Gen Co Ltd 電漿反應器
SG10201703432XA (en) 2007-04-27 2017-06-29 Applied Materials Inc Annular baffle
CN101255521B (zh) 2008-04-08 2010-06-16 上海工程技术大学 一种硬质合金连接件
JP5102706B2 (ja) * 2008-06-23 2012-12-19 東京エレクトロン株式会社 バッフル板及び基板処理装置
US8043434B2 (en) * 2008-10-23 2011-10-25 Lam Research Corporation Method and apparatus for removing photoresist

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI768406B (zh) * 2019-08-27 2022-06-21 大陸商中微半導體設備（上海）股份有限公司 改善氣體均一分佈的電漿反應裝置
TWI819432B (zh) * 2021-01-04 2023-10-21 大陸商江蘇魯汶儀器有限公司 改善蝕刻均勻性的雙擋板裝置

Also Published As

Publication number Publication date
US9095038B2 (en) 2015-07-28
JP5607699B2 (ja) 2014-10-15
JP2013089972A (ja) 2013-05-13
KR20150108344A (ko) 2015-09-25
KR20130043062A (ko) 2013-04-29
TW201318024A (zh) 2013-05-01
US20130102155A1 (en) 2013-04-25

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