TWI443720B - 調整閘極功函數的方法與具有金屬閘極的電晶體 - Google Patents

調整閘極功函數的方法與具有金屬閘極的電晶體 Download PDF

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TWI443720B
TWI443720B TW100135728A TW100135728A TWI443720B TW I443720 B TWI443720 B TW I443720B TW 100135728 A TW100135728 A TW 100135728A TW 100135728 A TW100135728 A TW 100135728A TW I443720 B TWI443720 B TW I443720B
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Tieh Chiang Wu
Yi Nan Chen
Hsien Wen Liu
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Nanya Technology Corp
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Description

調整閘極功函數的方法與具有金屬閘極的電晶體
本發明係關於一種調整閘極功函數的方法，特別是關於一種藉由離子植入金屬閘極來調整閘極功函數的方法。
傳統的金屬閘極電晶體通常係藉由乾蝕刻金屬來製造以形成閘極，然而要確保金屬乾蝕刻適當地停在超薄之閘極介電質上是困難的，無法使乾蝕刻準確地停在閘極氧化物上，會導致源極/汲極區域內矽的損失，故造成漏電流增加，因此提供多晶矽閘極是需要的
半導體元件之臨限電壓強烈依賴於閘極電極材料之功函數，因此為了分別對於P通道電晶體和N通道電晶體獲得所希望之功函數值，通常必須對閘極特性進行調整。
一般而言，為了簡化製程，節省成本，在半導體結構中只使用單一功函數的閘極，如N型多晶矽閘極，但是N型多晶矽閘極的臨界電壓值較低，而P型多晶矽閘極雖然可以提供適合的臨界電壓值，但是P型多晶矽閘極容易引起閘極引發汲極漏電流。
有鑑於此，本發明提供一種調整閘極功函數的方法可以同時提供高臨界電壓和降低閘極引發汲極漏電流。
根據本發明之一較佳實施例，本發明提供一種調整閘極功函數的方法，包含：首先，提供一基底，一金屬閘極設置在基底中，一源極摻雜區和一汲極摻雜區分別設置在金屬閘極的相對兩側之基底中，其中金屬閘極分為一鄰近源極區與源極摻雜區相鄰和一鄰近汲極區與汲極摻雜區相鄰，並且鄰近源極區與鄰近汲極區相鄰，然後，形成一遮罩層覆蓋源極摻雜區和汲極摻雜區，接著，進行一植入製程將氮植入金屬閘極，使得鄰近源極區具有一第一氮濃度且鄰近汲極區具有一第二氮濃度，第一氮濃度高於第二氮濃度，最後移除該遮罩層，其中金屬閘極的鄰近源極區之功函數會較金屬閘極的鄰近汲極區之功函數來得高。
根據本發明之另一較佳實施例，本發明提供一種調整閘極功函數的方法，包含：首先，提供一基底，一金屬閘極設置在基底中，一源極預定摻雜區和一汲極預定摻雜區分別設置在金屬閘極的相對兩側之基底中，其中金屬閘極分為一鄰近源極區與源極預定摻雜區相鄰和一鄰近汲極區與汲極預定摻雜區相鄰，並且鄰近源極區與鄰近汲極區相鄰，然後，形成一遮罩層覆蓋源極預定摻雜區和汲極預定摻雜區，接著進行一植入製程將氮植入金屬閘極，使得鄰近源極區具有一第一氮濃度且鄰近汲極區具有一第二氮濃度，第一氮濃度高於第二氮濃度，其中金屬閘極的鄰近源極區之功函數會較金屬閘極的鄰近汲極區之功函數來得高，之後移除該遮罩層，最後形成一源極摻雜區於源極預定摻雜區內，並且形成一汲極摻雜區於汲極預定摻雜區內。
根據本發明之另一較佳實施例，本發明提供一種具有金屬閘極的電晶體，包含：一基底、一金屬閘極設置於基底上以及一源極摻雜區和一汲極摻雜區分別設置在金屬閘極的相對兩側之基底中，其中金屬閘極分為一鄰近源極區與源極摻雜區相鄰和一鄰近汲極區與汲極摻雜區相鄰，鄰近源極區具有一第一氮濃度且鄰近汲極區具有一第二氮濃度，第一氮濃度大於第二氮濃度，其中金屬閘極的鄰近源極區之功函數會較金屬閘極的鄰近汲極區之功函數來得高。
第1圖至第4圖為根據本發明之第一較佳實施例所繪示的調整閘極功函數的方法之側視示意圖。如第1圖所示，首先，提供一半導體基底10，一金屬閘極12設置在該半導體基底10上，金屬閘極12可以利用銀、鋁、銅、鉻、鎳、碳、鍺、鈷、鉑、或鎢等金屬來製作，根據本發明之較佳實施例，金屬閘極12包含鈦。金屬閘極12具有一第一側壁14和一第二側壁16，第一側壁14和第二側壁16相對。
一源極預定摻雜區18和一汲極預定摻雜區20分別定義於金屬閘極12的相對兩側之半導體基底10中，接著如第2圖所示，進行一離子植入製程，同時植入離子於源極預定摻雜區18和汲極預定摻雜區20內，以形成一源極摻雜區22於源極預定摻雜區18內，和形成一汲極摻雜區24於汲極預定摻雜區20。金屬閘極12可以分為一鄰近源極區26與源極摻雜區相鄰22和一鄰近汲極區28與汲極摻雜區24相鄰，此外，鄰近源極區26與鄰近汲極區28相鄰。
如第3圖所示，形成一遮罩層30，例如一光阻層，覆蓋源極摻雜區22、汲極摻雜區24、第一側壁14和第二側壁16，曝露出金屬閘極12的上表面，另外遮罩層30的上表面較金屬閘極12的上表面高，然後進行一植入製程，利用遮罩層30為遮罩，將氮植入金屬閘極12中，植入氮之後，金屬閘極12的鄰近源極區26具有一第一氮濃度C1 ；金屬閘極12的鄰近汲極區28具有一第二氮濃度C2 ，第一氮濃度C1 較第二氮濃度C2 高，另外，第一氮濃度C1 漸進地由鄰近源極區26向鄰近汲極區28方向遞減；且第二氮濃度C2 也漸進地由鄰近源極區26向鄰近汲極區28方向遞減。
前述之植入製程較佳為一斜角植入製程，且植入製程可以進行多次以在金屬閘極12的各區形成預定濃度，如前述第一氮濃度C1 和第二氮濃度C2 。如第4圖所示，移除遮罩層30，此時，根據本發明之第一較佳實施例所製作的一金屬閘極電晶體32業已完成，金屬閘極電晶體32的金屬閘極12具有適合的功函數，詳細來說金屬閘極12的鄰近源極區26之功函數會較金屬閘極12的鄰近汲極區28之功函數來得高，且金屬閘極12的鄰近源極區26和鄰近汲極區28之功函數也會漸進地由鄰近源極區26向鄰近汲極區28的方向變小。
根據本發明之第二較佳實施例，前述植入氮的製程可以提前進行，較佳是在形成源極摻雜區和汲極摻雜區之前進行。第1圖、第5圖和第6圖為根據本發明之第二較佳實施例所繪示的調整閘極功函數的方法之側視示意圖，其中具有相同功能的元件將以相同的符號標示。
請參考第1圖，提供一半導體基底10，一金屬閘極12設置在該半導體基底10上，金屬閘極12可以利用銀、鋁、銅、鉻、鎳、碳、鍺、鈷、鉑、或鎢等金屬來製作，根據本發明之較佳實施例，金屬閘極12包含鈦。金屬閘極12具有一第一側壁14和一第二側壁16，第一側壁14和第二側壁16相對。
一源極預定摻雜區18和一汲極預定摻雜區20分別定義於金屬閘極12的相對兩側之半導體基底10中，此時，金屬閘極12可以分為一鄰近源極區26與源極預定摻雜區18相鄰22和一鄰近汲極區28與汲極預定摻雜區20相鄰，此外，鄰近源極區26與鄰近汲極區28相鄰。
如第5圖所示，形成一遮罩層30，例如一光阻層，覆蓋源極預定摻雜區18、汲極預定摻雜區20、金屬閘極12的第一側壁14和第二側壁16，曝露出金屬閘極12的上表面，另外遮罩層30的上表面較金屬閘極12的上表面高，然後進行一植入製程，利用遮罩層30為遮罩，將氮植入金屬閘極12中，植入氮之後，金屬閘極12的鄰近源極區26具有一第一氮濃度C1 ；金屬閘極12的鄰近汲極區28具有一第二氮濃度C2 ，第一氮濃度C1 較第二氮濃度C2 高，另外，第一氮濃度C1 漸進地由鄰近源極區26向鄰近汲極區28方向遞減；且第二氮濃度C2 也漸進地由鄰近源極區26向鄰近汲極區28方向遞減。此外，前述之植入製程可以為一斜角植入製程。
請參閱第6圖，移除遮罩層30，然後進行一離子植入製程，形成一源極摻雜區22於源極預定摻雜區18內，並且形成一汲極摻雜區24於汲極預定摻雜區內20內。至此，根據本發明之第二較佳實施例所製作的一金屬閘極電晶體32業已完成，金屬閘極電晶體32的金屬閘極12具有適合的功函數，詳細來說金屬閘極12的鄰近源極區26之功函數會較金屬閘極12的鄰近汲極區28之功函數來得高，且金屬閘極12的鄰近源極區26和鄰近汲極區28之功函數也會漸進地由鄰近源極區26向鄰近汲極區28的方向變小。
根據本發明的另一較佳實施例，本發明提供一種金屬閘極的電晶體，如第4圖所示，金屬閘極的電晶體32包含一半導體基底10、一金屬閘極12設置於半導體基底10上、一材料層13位於金屬閘極12和半導體基底10之間、一源極摻雜區22和一汲極摻雜區24分別設置在金屬閘極12的相對兩側之半導體基底10中，其中金屬閘極12分為一鄰近源極區26與源極摻雜區22相鄰和一鄰近汲極區28與汲極摻雜區24相鄰，鄰近源極區26和材料層13接觸，鄰近汲極區28也和材料層13接觸，鄰近源極區28具有一第一氮濃度C1 且鄰近汲極區28具有一第二氮濃度C2 ，第一氮濃度C1 大於該第二氮濃度C2 。另外，第一氮濃度C1 漸進地由鄰近源極區26向該鄰近汲極區28方向遞減；且第二氮濃度C2 也漸進地由鄰近源極區26向該鄰近汲極區28方向遞減。金屬閘極12的鄰近源極區26之功函數會較金屬閘極12的鄰近汲極區28之功函數來得高，且金屬閘極12的鄰近源極區26和鄰近汲極區28之功函數也會漸進地由鄰近源極區26向鄰近汲極區28的方向變小，另外，金屬閘極12可以利用銀、鋁、銅、鉻、鎳、碳、鍺、鈷、鉑、或鎢等金屬來製作，根據本發明之較佳實施例，金屬閘極12包含鈦。
本發明之調整閘極功函數的方法亦可以應用在製作鰭狀場效電晶體，第7圖繪示利用本發明調整閘極功函數的方法所製作的鰭狀場效電晶體之示意圖。如第7圖所示，一鰭狀場效電晶體72放置在一基底50上，一源極摻雜區52和一汲極摻雜區54向上突起形成 一鰭狀結構，一金屬閘極62橫跨鰭狀結構，金屬閘極62可以分為一鄰近源極區56與源極摻雜區52相鄰和一鄰近汲極區58與汲極摻雜區54相鄰。鄰近源極區56具有一第一氮濃度C3 且鄰近汲極區58具有一第二氮濃度C4 ，第一氮濃度C3 大於第二氮濃度C4 。另外，第一氮濃度C3 漸進地由鄰近源極區56向鄰近汲極區58方向遞減；且第二氮濃度C4 也漸進地由鄰近源極區56向鄰近汲極區58方向遞減。
前文所述各個金屬閘極之功函數係利用植入氮到金屬閘極中來進行調整，值得注意的是：金屬閘極所含的氮濃度越高，金屬閘極的功函數也越高。舉例而言，前述各個實施例中，鄰近源極區26、56具有的第一氮濃度C1 、C3 大於鄰近汲極區28、58所具有的第二氮濃度C2 、C4 ，則金屬閘極12、62的鄰近源極區26、56之功函數會較金屬閘極12、62的鄰近汲極區28、58之功函數來得高，另外，因為第一氮濃度C1 、C3 漸進地由鄰近源極區26、56向鄰近汲極區28、58方向遞減，因此金屬閘極12、62的鄰近源極區26、56之功函數也會漸進地由鄰近源極區26、56向鄰近汲極區28、58方向變小；同樣地，因為第二氮濃度C2 、C4 漸進地由鄰近源極區26、56向鄰近汲極區28、58方向遞減，因此金屬閘極12、62的鄰近源極區26、56之功函數也會漸進地由鄰近源極區26、56向鄰近汲極區28、58方向變小。由於單一金屬閘極具有多種功函數，因此本發明的金屬閘極電晶體可以同時提供高臨界電壓，並且降低閘極引發汲極漏電流。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
10‧‧‧半導體基底
12、62‧‧‧金屬閘極
14‧‧‧第一側壁
16‧‧‧第二側壁
18‧‧‧源極預定摻雜區
20‧‧‧汲極預定摻雜區
22、52‧‧‧源極摻雜區
24、54‧‧‧汲極摻雜區
26、56‧‧‧鄰近源極區
28、58‧‧‧鄰近汲極區
30‧‧‧遮罩層
32‧‧‧金屬閘極電晶體
50‧‧‧基底
72‧‧‧鰭狀場效電晶體
13‧‧‧材料層
第1圖至第4圖為根據本發明之第一較佳實施例所繪示的調整閘極功函數的方法之側視示意圖。
第1圖、第5圖和第6圖為根據本發明之第二較佳實施例所繪示的調整閘極功函數的方法之側視示意圖。
第7圖繪示的是利用本發明調整閘極功函數的方法所製作的鰭狀場效電晶體之示意圖。
10‧‧‧半導體基底
12‧‧‧金屬閘極
14‧‧‧第一側壁
16‧‧‧第二側壁
22‧‧‧源極摻雜區
24‧‧‧汲極摻雜區
26‧‧‧鄰近源極區
28‧‧‧鄰近汲極區
32‧‧‧金屬閘極電晶體
13‧‧‧材料層

Claims (20)

  1. 一種調整閘極功函數的方法，包含：提供一基底，一金屬閘極設置在該基底中，一材料層設置於該金屬閘極和該基底之間，一源極摻雜區和一汲極摻雜區分別設置在該金屬閘極的相對兩側之該基底中，其中該金屬閘極分為一鄰近源極區與該源極摻雜區相鄰和一鄰近汲極區與該汲極摻雜區相鄰，並且該鄰近源極區與該鄰近汲極區相鄰，該鄰近源極區接觸該材料層且該鄰近汲極區接觸該材料層；形成一遮罩層覆蓋該源極摻雜區和該汲極摻雜區；進行一植入製程將氮植入該金屬閘極，使得該鄰近源極區具有一第一氮濃度且該鄰近汲極區具有一第二氮濃度，該第一氮濃度高於該第二氮濃度；以及移除該遮罩層。
  2. 如申請範圍第1項所述之調整閘極功函數的方法，其中該植入製程為一斜角植入製程。
  3. 如申請範圍第1項所述之調整閘極功函數的方法，其中該金屬閘極包含鈦。
  4. 如申請範圍第1項所述之調整閘極功函數的方法，其中該金屬閘極包含一材料選自下列群組包括銀、鋁、銅、鉻、鎳、碳、鍺、鈷、 鉑、和鎢。
  5. 如申請範圍第1項所述之調整閘極功函數的方法，其中該第一氮濃度漸進地由該鄰近源極區向該鄰近汲極區方向遞減。
  6. 如申請範圍第1項所述之調整閘極功函數的方法，其中該第二氮濃度漸進地由該鄰近源極區向該鄰近汲極區方向遞減。
  7. 如申請範圍第1項所述之調整閘極功函數的方法，其中該金屬閘極的該鄰近源極區之功函數大於該金屬閘極的該鄰近汲極區之功函數。
  8. 如申請範圍第1項所述之調整閘極功函數的方法，其中該金屬閘極的一第一側壁和該金屬閘極的一第二側壁相對。
  9. 一種調整閘極功函數的方法，包含：提供一基底，一金屬閘極設置在該基底中，一材料層設置於該金屬閘極和該基底之間，一源極預定摻雜區和一汲極預定摻雜區分別設置在該金屬閘極的相對兩側之該基底中，其中該金屬閘極分為一鄰近源極區與該源極預定摻雜區相鄰和一鄰近汲極區與該汲極預定摻雜區相鄰，並且該鄰近源極區與該鄰近汲極區相鄰，該鄰近源極區接觸該材料層且該鄰近汲極區接觸該材料層；形成一遮罩層覆蓋該源極預定摻雜區和該汲極預定摻雜區； 進行一植入製程將氮植入該金屬閘極，使得該鄰近源極區具有一第一氮濃度且該鄰近汲極區具有一第二氮濃度，該第一氮濃度高於該第二氮濃度；移除該遮罩層；以及形成一源極摻雜區於該源極預定摻雜區內，並且形成一汲極摻雜區於該汲極預定摻雜區內。
  10. 如申請範圍第9項所述之調整閘極功函數的方法，其中該植入製程為一斜角植入製程。
  11. 如申請範圍第9項所述之調整閘極功函數的方法，其中該金屬閘極包含鈦。
  12. 如申請範圍第9項所述之調整閘極功函數的方法，其中該金屬閘極包含一材料選自下列群組包括銀、鋁、銅、鉻、鎳、碳、鍺、鈷、鉑、和鎢。
  13. 如申請範圍第9項所述之調整閘極功函數的方法，其中該第一氮濃度漸進地由該鄰近源極區向該鄰近汲極區方向遞減。
  14. 如申請範圍第9項所述之調整閘極功函數的方法，其中該第二氮濃度漸進地由該鄰近源極區向該鄰近汲極區方向遞減。
  15. 如申請範圍第9項所述之調整閘極功函數的方法，其中該金屬閘極的該鄰近源極區之功函數大於該金屬閘極的該鄰近汲極區之功函數。
  16. 如申請範圍第9項所述之調整閘極功函數的方法，其中該金屬閘極的一第一側壁和該金屬閘極的一第二側壁相對。
  17. 一種具有金屬閘極的電晶體，包含：一基底；一金屬閘極設置於該基底上；一材料層設置於該金屬閘極和該基底之間；以及一源極摻雜區和一汲極摻雜區分別設置在該金屬閘極的相對兩側之該基底中，其中該金屬閘極分為一鄰近源極區與該源極摻雜區相鄰和一鄰近汲極區與該汲極摻雜區相鄰，該鄰近源極區具有一第一氮濃度且該鄰近汲極區具有一第二氮濃度，該第一氮濃度大於該第二氮濃度，該鄰近源極區接觸該材料層且該鄰近汲極區接觸該材料層。
  18. 如申請範圍第17項所述之具有金屬閘極的電晶體，其中該金屬閘極包含鈦。
  19. 如申請範圍第17項所述之具有金屬閘極的電晶體，其中該第一氮濃度漸進地由該鄰近源極區向該鄰近汲極區方向遞減。
  20. 如申請範圍第17項所述之具有金屬閘極的電晶體，其中該第二氮濃度漸進地由該鄰近源極區向該鄰近汲極區方向遞減。
TW100135728A 2011-04-07 2011-10-03 調整閘極功函數的方法與具有金屬閘極的電晶體 TWI443720B (zh)

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