TWI440212B - Led晶片之熱管理及製造方法 - Google Patents
Led晶片之熱管理及製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 8
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- 229910052751 metal Inorganic materials 0.000 claims description 67
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- 229910052719 titanium Inorganic materials 0.000 description 2
- -1 AlInGaP Chemical class 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
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- 239000004593 Epoxy Substances 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1662—Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Led Devices (AREA)
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Description
本發明一般係有關一種發光裝置及其製造方法。
化合物半導體領域中的最新進展已經帶來新一代的發光二極體(LED)及用於可見光譜範圍之雷射,特別是在III-V族氮化物藍光及綠光波長區域內。相較於其他寬能隙半導體,氮化物半導體的主要優勢在於其在高電流密度驅動下,於光學裝置中的低降解特性。最近幾年,各公司已竭盡所能進入新的房屋照明和LCD背光市場,一般構想在於以更可靠且輕巧的半導體光源-LED燈泡取代傳統白熾或螢光燈泡。旨在取代傳統白熾或螢光燈泡的LED型白光照明設備可利用少數方法加以製造,例如使用供藍光或UV LED的下轉換所用之螢光體、以及使用不同波長LED(例如紅光、綠光及藍光LED)的一個組合。
市場滲透的其中一個基本障礙為流明/$(LED的燈泡成本),其中一種共通方法在於以可能具有最小效率遞降特性之最高電流密度來驅動一個LED。實施LED結構之磊晶生長以微調多重量子井及擴散障礙可部分地改善此效率遞降特性,但在晶片封裝中實施良好的熱管理以降低接面溫度卻極難達到近乎零效率遞降的裝置。
將高導熱性材料接至LED上面的各種不同方法已經被採用,化學氣相沈積鑽石(CVD鑽石)、碳化矽(SiC)、氮化鋁(AlN)、以及氮化硼(BN)乃一般用以從LED散熱之非金屬類型次黏著基板。銅(Cu)、鋁(Al)、鎳(Ni)以及CuW合金則為常用於LED的金屬和金屬合金次黏著基板。然而,雖然這種金屬和金屬合金提供了LED非常好的熱管理,熱膨脹係數(CTE)不匹配卻成了在高電流密度下長期熱循環作業之後裝置可靠性的議題。CVD鑽石提供了卓越的LED熱管理,但CTE與LED之匹配卻未盡齊全。其他非金屬材料如AlN提供了更佳的熱膨脹係數匹配,但其熱管理較不符合要求。
根據習知技藝,下列美國專利及已公布之申請案可能敘述過:
以及:
J. R. Roos及J. P. Celis於美國電鍍處理學會第71年度技術會議之會議記錄中發表的“固體顆粒之電解共沈積是否為可靠的批覆科技?”論文0-1,紐約,1984,p.1。
J. R. Roos於INCEF’86會議記錄中所發表的”新一代電解及無電鍍複合物批覆”,1988,p.382。
V. P. Greco及W. Baldauf,電鍍55(1986)250。
本發明係有關製造高功率發光裝置的方法,其最好是使用一塊具有高導熱性及與該裝置匹配之卓越熱膨脹係數的無電鍍或電解電鍍金屬複合散熱基板。
這種製造方法可包含一個或更多個下列製程。利用無電鍍或電解電鍍法在反射層和接觸層上面形成金屬複合物,位於p-型或n-型化合物半導體上面的這種反射層和接觸層可利用各種不同技術如噴鍍、電子束蒸鍍或無電鍍或電解電鍍法予以沈積。裝置結構可利用MOCVD(有機金屬化學氣相沈積法)、HVPE(氫化物氣相磊晶法)或MBE(分子束磊晶法)生長,可利用雷射剝離(LLO)法、選擇性濕式蝕刻法、光電化學蝕刻法、電化學蝕刻法、或化學機械研磨法除去藍寶石、碳化矽、LiAlO2
、ZnO或矽基板。金屬複合物之熱膨脹可利用一種或更多種不同類型之顆粒材料、不同顆粒尺寸分佈以及顆粒在金屬複合物中的不同體積百分比加以調整。
本發明提供了某些較習知記憶為佳的優點,LED晶圓和晶片之用於提高光萃取效率的粗糙化表面可輕易地利用無電鍍或電解電鍍製程予以平坦化,本發明亦藉由免除欲達到更佳熱管理而將LED裝置接於一個不同次黏著基板上面之複雜且冗長的接合/膠合製程,而降低了成本。LED裝置之可靠度亦由於基板和裝置材料之間的CTE匹配性較佳而改善。
第1圖繪示了根據本發明之垂直LED的第一項實施例。
第2a-2c圖概略地繪示了具一金屬複合基板之LED的製程步驟。
第3圖繪示了具一金屬複合基板之圖案化p-型表面的一個LED裝置實施例。
第4圖繪示了具一金屬複合基板之圖案化n-型及p-型表面的一個p側在下LED裝置實施例。
第5圖繪示了具一金屬複合基板之圖案化n-型及p-型表面的一個n側在下LED裝置實施例。
第6圖繪示了具一金屬複合物及一金屬合金基板之圖案化n-型及p-型表面的一個p側在下LED裝置實施例。
第7圖繪示了貼有原始透明晶圓基板並已形成圖案之共面型p側及n側在下LED裝置的一個實施例示範結構。
第8圖繪示了具一金屬複合基板之已形成圖案之n側頂端貼有螢光體層的一個白光p側在下LED裝置之實施例。
第9圖繪示了將白光p側在下LED裝置裝入一個封裝件內之實施例,其中有一個分立螢光轉換裝置接至具一金屬複合基板的整個LED晶片上。
第10圖繪示了將白光p側在下LED裝置裝入一個封裝件內之實施例,其中有一個分立螢光轉換裝置接至具一金屬複合基板的圖案化n側頂端上面。
第11圖繪示了具一金屬複合基板之斜角蝕刻圖案化n-型及p-型表面的一個p側在下LED裝置實施例。
為舉例說明本發明,以下將敘述使用根據本發明之技術的各種不同實際範例及諸幅附圖:
第1圖繪示了垂直LED裝置經移除異質基板之後的一個實施例示範結構。LED裝置含有一塊LED晶圓或晶片14、一層p-型接觸金屬層13、一層鏡面層或反射層12、一塊電解電鍍金屬複合基板11、以及一層n-型金屬接觸層15。可將一個p-型焊墊直接接至金屬複合基板11,並將一個n-型焊墊沈積在n-型金屬接觸層上面並利用任何適當的方法連接。第2a-2c圖概略地繪示了製備這種具有金屬複合基板之LED裝置的製程步驟。異質基板16上面的一個LED磊晶結構14係利用MOCVD、HVPE或MBE生長,結構14之p-型III-V族氮化物半導體上面的金屬接觸層13可利用電子束蒸鍍、濺鍍(RF、DC或AC)、無電鍍或電解電鍍、化學氣相沈積、電漿輔助化學氣相沈積(PECVD)、原子層沈積(ALD)、物理氣相沈積、蒸鍍、電漿噴塗或旋塗、或者這些技術的一個組合予以沈積。金屬接觸層13可為透光性良好之單層或多層構造,p-型金屬接觸層之範例有Ni/Au、Pt/Au、Pd/Au、Ni/ZnO、Ni/Au/ITO、單壁碳奈米管、Pt以及Pd。接著利用沈積金屬接觸層的方法沈積鏡面層12,鏡面層包含一層由例如Ag、Al、Cr、Pt或Ti所組成的反射層,以及一層諸如Au、Ni、Ni/Au、TiN、Ti/Au、Cr/Au、W或Ni/Cr/Au之緩衝層。接著以含有如Cu及Ni等金屬之具CVD鑽石、AIN或BN懸浮顆粒的溶液,以無電鍍或電解電鍍方式在鏡面層12上面形成金屬複合物11,接著利用雷射剝蝕法、蝕刻法、輪磨/拋光或化學機械研磨或濕式蝕刻法等移除載板16。接著將具有良好透光性之n-型接觸層15沈積於結構14的n-型III-V族氮化物半導體上面。n-型金屬接觸層之範例有Ti/Al、ZnO、ITO、TiN、Ni/ZnO及Ni/Au/ITO。
LED結構14的磊晶生長包含一層介於基板與頂端裝置結構之間的犧牲層17,犧牲層17可利用不同方法製備,其中一個範例為生長一層多孔性金屬氮化物,例如氮化鈦或氮化鉻,以利機械式分離。第二個範例為生長低溫氮化鋁,以利化學濕式蝕刻。第三個範例為生長一層高UV光吸收InGaN層,以助於雷射剝離。第四個範例為在LED結構與基板界面中製造或生長奈米結構,以助於利用機械、電化學或化學濕式蝕刻法進行分離。奈米結構可為奈米柱(亦稱為奈米線、奈米柱狀物或奈米支柱)、奈米孔或奈米網。這類奈米孔的形狀可為任何大小不一或界限明確之正方形、圓形、三角形、梯形或多邊形配置,或者這些形狀的混合體。從基板分離之LED結構的n側歷經一道研磨製程而除去低品質成核層和緩衝層,以露出結構14的n-型III-V族氮化物接觸層。具良好透光性之n-型接觸層15接著沈積於結構14的n-型III-V族氮化物半導體上面。
第3圖繪示了垂直LED裝置經移除異質基板之後的另一個實施例示範結構。LED裝置含有一塊LED晶圓或晶片24、一層p-型接觸金屬層23、一層反射層22、一塊電解電鍍金屬複合基板21、以及一層n-型金屬接觸層25。可將一個p-型焊墊直接接至金屬複合基板21,並將一個n-型焊墊沈積在n-型金屬接觸層上面並利用任何適當的方法連接。欲提高光萃取效率,可利用各種不同技術將晶圓或晶片24的p-型III-V族氮化物接觸層粗糙化或製作圖案。已粗糙化的表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,粗糙化表面亦可利用濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
第4圖繪示了垂直LED裝置經移除異質基板之後的另一個實施例示範結構。LED裝置含有一塊LED晶圓或晶片34、一層p-型接觸金屬層33、一層反射層32、一塊電解電鍍金屬複合基板31、以及一層n-型金屬接觸層35。可將一個p-型焊墊直接接至金屬複合基板31,並將一個n-型焊墊沈積在n-型金屬接觸層上面並利用任何適當的方法連接。欲提高光萃取效率,可利用各種不同技術將晶圓或晶片34的p-型及n-型III-V族氮化物接觸層兩者粗糙化或製作圖案。已粗糙化的表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,p-型及n-型III-V族氮化物的粗糙化表面亦可利用濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
第5圖繪示了n側在下之垂直LED裝置經移除異質基板之後的一個實施例示範結構。LED裝置含有一塊LED晶圓或晶片44、一層透明p-型接觸金屬層43、一層n-型金屬接觸層45、一層反射層42、以及一塊電解電鍍金屬複合基板41。可將一個n-型焊墊直接接至金屬複合基板41,並將一個p-型焊墊沈積在p-型金屬接觸層上面並利用任何適當的方法連接。欲提高光萃取效率,可利用各種不同技術將晶圓或晶片44的n-型及p-型III-V族氮化物接觸層兩者粗糙化或製作圖案。p-型粗糙化表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,p-型及n-型III-V族氮化物的粗糙化表面亦可利用濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
第6圖繪示了p側在下之垂直LED裝置經移除異質基板之後的一個實施例示範結構。LED裝置含有一塊LED晶圓或晶片54、p-型接觸金屬層53、一層反射層52、一塊電解電鍍金屬複合基板51、以及一層n-型金屬接觸層55。有一個額外的金屬或金屬合金散熱器58以無電鍍或電解方式鍍在金屬複合物51上面。可將一個p-型焊墊直接接至金屬或金屬合金基板58,並將一個n-型焊墊沈積在n-型金屬接觸層上面並利用任何適當的方法連接。欲提高光萃取效率,可利用各種不同技術將p-型及n-型III-V族氮化物接觸層兩者粗糙化或製作圖案。已粗糙化的表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,p-型及n-型III-V族氮化物的粗糙化表面亦可利用濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
第7圖繪示了貼有原始晶圓基板並已形成圖案之共面型p側及n側在下LED裝置的一個實施例示範結構。LED裝置包含一塊生長於異質基板66上面之LED晶片64、一層p-型接觸金屬層63、一層反射層62、一塊電鍍金屬複合基板61、以及一層n-型金屬接觸層65。有一層以絕緣電介材料製成之額外鈍化層68用以界定金屬複合基板61的無電鍍或電解電鍍邊界範圍,可將p-型及n-型焊墊直接接至金屬複合基板61的兩個部分。欲提高光萃取效率,可利用各種不同技術將原始基板66粗糙化或製作圖案。已隨意粗糙化的表面可利用乾式蝕刻法、濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、千涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
第8圖繪示了已形成圖案之n側頂端附有螢光體的一個p側在下白光LED裝置之實施例示範結構。垂直白光LED裝置含有一塊LED晶圓或晶片74、一層p-型接觸金屬層73、一層n-型金屬接觸層75、一層反射層72、以及一塊電解電鍍金屬複合基板71。可將一個p-型焊墊77直接接至金屬複合基板71,並將一個n-型焊墊76沈積在n-型金屬接觸層上面並利用任何適當的方法連接。欲提高光萃取效率,可利用各種不同技術將晶圓或晶片74之n-型及p-型III-V族氮化物接觸層兩者粗糙化或製作圖案。p-型粗糙化表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,p-型及n-型III-V族氮化物的粗糙化表面亦可利用濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
螢光體係由若干透明聚合物層78及80和螢光體層79所構成,可將頂端的聚合物層80製作圖案以進一步提高並控制光萃取效率及光輸出方向。聚合物層78及80可由單層或多層聚合物組成,其中一個範例為使用堅固的聚合物如PMMA(聚甲基丙烯酸甲酯)、PC(聚碳酸酯)或環氧樹脂作為頂端的少數層,但以矽酮作為頂端n-型接觸層75和螢光體層79之間的材料層。螢光體可利用旋塗法、網印法、電漿噴塗法或靜電塗裝法直接沈積在LED裝置上面。在旋塗法和網印法的情況中,可將螢光體材料散佈在含有鎔劑、聚合物、添加劑和固化劑的一個介質內。螢光體亦可預製成一個分立元件,然後利用接合劑貼附於LED裝置上。螢光體可包括不同數目的層,螢光體層79係以下列方式形成:諸層自底部到頂端逐漸變薄;及(或)諸層由相同類型之螢光體組成或者諸層由不同類型之螢光體組成,其中底層所發射之平均光波長較頂層還短;及(或)將諸層形成圖案以達均勻之光分佈。可將n-型接觸層75製作圖案,而使發射光能以較窄的一個角度分佈照射且更加平行。
除了螢光體係形成一個上蓋以覆蓋LED裝置的整個尺寸之外,第9圖繪示了與範例8類似之範例。垂直白光LED裝置含有一塊LED晶圓或晶片84、一層p-型接觸金屬層83、一層n-型金屬接觸層85、一層反射層82、以及一塊電解電鍍金屬複合基板81。可將一個p-型焊墊87直接接至金屬複合基板81,並將一個n-型焊墊86沈積在n-型金屬接觸層上面並利用任何適當的方法連接。欲提高光萃取效率,可利用各種不同技術將晶圓或晶片84之n-型及p-型III-V族氮化物接觸層兩者粗糙化或製作圖案。p-型粗糙化表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,p-型及n-型III-V族氮化物的粗糙化表面亦可利用濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
螢光體係由若干透明的聚合物層88及90和螢光體層89所構成,可將頂端的聚合物層90製作圖案以進一步提高並控制光萃取效率及光輸出方向。螢光體係預製成一個分立元件,然後利用接合劑貼附於LED裝置上。螢光體可包括不同數目的層,螢光體層89係以下列方式形成:諸層自底部到頂端逐漸變薄;及(或)諸層由相同類型之螢光體組成或者諸層由不同類型之螢光體組成,其中底層所發射之平均光波長較頂層還短;及(或)將諸層形成圖案以達均勻之光分佈。可將n-型接觸層85製作圖案,而使發射光能以較窄的一個角度分佈照射且更加平行。
第10圖繪示了LED封裝上面附著了分立螢光體(118、119、120)的一個p側在下白光LED實施例。垂直白光LED裝置含有一塊LED晶片114、一層p-型接觸金屬層113、一層n-型金屬接觸層115、一層反射層112、以及一塊電解電鍍金屬複合基板111。可將一個p-型焊墊117直接接至金屬複合基板111,並將一個n-型焊墊116沈積在n-型金屬接觸層上面並利用任何適當的方法連接至封裝件。欲提高光萃取效率,可利用各種不同技術將n-型及p-型III-V族氮化物接觸層兩者粗糙化或製作圖案。p-型粗糙化表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,p-型及n-型III-V族氮化物的粗糙化表面亦可利用濕式蝕刻法、電化學蝕刻法或光化學蝕刻法製成。已形成圖案的表面可利用由光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成之光罩,以乾式或濕式蝕刻法製成。
除了製作成一個分立裝置以附著在LED封裝件頂端上面之外,螢光體的配置類似於範例7中所述。整個LED裝置係裝在側壁塗有反射材料121如Ag、Al或電介質鏡面塗層的一個封裝件中,封裝件底部於兩個區域122、123內沈積了Au或其他高導電性金屬或金屬合金,該二區域彼此之間互不通電。p側焊墊117乃接至區域122,而n側焊墊116以金屬線接至區域123。LED封裝件內部裝滿了惰性氣體如N2
、Ar等、或一種導熱且電絕緣之材料如矽油或混合了高導熱性奈米及微米顆粒的矽油。導熱材料可為CVD鑽石、AIN、BN、SiC等。
第11圖繪示了p側在下之垂直LED裝置經移除異質基板之後的一個示範實施例。LED裝置含有一塊LED晶圓或晶片134、一層p-型接觸金屬層133、一層反射層132、一塊電解電鍍金屬複合基板131、以及一層n-型金屬接觸層135。可將一個p-型焊墊直接接至金屬複合基板131,並將一個n-型焊墊沈積在n-型金屬接觸層上面並利用任何適當的方法連接。欲提高光萃取效率,可利用各種不同技術將p-型及n-型III-V族氮化物接觸層兩者粗糙化或製作圖案。已粗糙化的表面可利用具有較高p-型摻雜之臨場磊晶生長法進行生長,p-型及n-型III-V族氮化物之已粗糙化或已形成圖案的表面可利用斜角乾式蝕刻法製成。蝕刻角度可在零度與九十度之間變化,此斜角乾式蝕刻法可於蝕刻室內將樣品傾斜所欲之角度及方向而完成。所製成之具有圖案或已粗糙化的139表面可包括具有所欲斜角之奈米結構,其依次產生了一層折射率可調成比原III-V族氮化物折射率還低的材料,此依次提高了LED裝置的光萃取效率。已形成圖案之光罩可利用光微影法、全像術、噴墨列印法、多孔氧化鋁陽極處理法、金屬退火法、干涉術、網印法或奈米壓印法製成。頂端的透明金屬接觸層135可包括ITO/Ni/Au、Ti/Al、TiN、含不同摻雜物之ITO或ZnO。
熟悉技藝者將可清楚理解,多種方法及製程參數均適用於本發明之範圍,非僅上文所明示。舉例而言,n-型化合物半導體接觸層上面的圖案可為光晶、準光晶或光柵,因此光輸出的光束形狀可以控制。用以形成金屬複合基板的無電鍍或電解電鍍法可應用於整塊晶圓上。光微影製程利用電漿輔助化學氣相沈積(PECVD)二氧化矽,以形成LED裝置之p側上面的晶片邊界,接著沈積金屬接觸層和反射層並予以退火。緩衝氧化物移除製程會除去二氧化矽,並剝離沈積在此氧化物頂端上面的金屬。將有助於晶片分離之p-型化合物半導體的一個邊界露出,接著利用無電鍍或電解電鍍製程形成金屬複合基板,然後移除原磊晶生長基板。吾人亦能清楚理解,本發明可擴及到使用不同類型之金屬,例如AlInGaP、AlInGaAs、ZnO、以及其他類型的半導體。
雖然已經藉由若干範例並根據較佳實施例敘述過本發明,必須瞭解的是,本發明並不限於此。相反地,其將涵蓋各種不同變更及類似配置和程序,因此依附項申請專利範圍應該符合最廣泛之解釋,以涵蓋所有這類變更及類似配置和程序。
11、21、31、41、51、61、71、81、111、131...金屬複合基板
12、22、32、42、52、62、72、82、112、132...鏡面層、反射層
13、23、33、43、53、63、73、83、113、133...p-型接觸金屬層
14、24、34、44、54、64、74、84、114、134...晶圓、晶片
15、25、35、45、55、65、75、85、115、135...n-型金屬接觸層
16、66...異質基板、載板
17...犧牲層
58...散熱器
68...鈍化層
76、86、116...n-型焊墊
77、87、117...p-型焊墊
78、88、80、90...聚合物層
79、89...螢光體層
118、119、120...分立螢光體
121...反射材料
122、123...區域
139...表面
第1圖繪示了根據本發明之垂直LED的第一項實施例。
第2a-2c圖概略地繪示了具一金屬複合基板之LED的製程步驟。
第3圖繪示了具一金屬複合基板之圖案化p-型表面的一個LED裝置實施例。
第4圖繪示了具一金屬複合基板之圖案化n-型及p-型表面的一個p側在下LED裝置實施例。
第5圖繪示了具一金屬複合基板之圖案化n-型及p-型表面的一個n側在下LED裝置實施例。
第6圖繪示了具一金屬複合物及一金屬合金基板之圖案化n-型及p-型表面的一個p側在下LED裝置實施例。
第7圖繪示了貼有原始透明晶圓基板並已形成圖案之共面型p側及n側在下LED裝置的一個實施例示範結構。
第8圖繪示了具一金屬複合基板之已形成圖案之n側頂端貼有螢光體層的一個白光p側在下LED裝置之實施例。
第9圖繪示了將白光p側在下LED裝置裝入一個封裝件內之實施例,其中有一個分立螢光轉換裝置接至具一金屬複合基板的整個LED晶片上。
第10圖繪示了將白光p側在下LED裝置裝入一個封裝件內之實施例,其中有一個分立螢光轉換裝置接至具一金屬複合基板的圖案化n側頂端上面。
第11圖繪示了具一金屬複合基板之斜角蝕刻圖案化n-型及p-型表面的一個p側在下LED裝置實施例。
11...金屬複合基板
12...鏡面層、反射層
13...p-型接觸金屬層
14...晶圓、晶片
15...n-型金屬接觸層
Claims (15)
- 一種製造一供一高功率發光裝置用之熱膨脹係數匹配基板的方法,其係使用一金屬複合物基板來製造,該金屬複合基板係將含有懸浮微粒的一金屬或一金屬合金溶液以無電鍍或電解電鍍方式鍍在發光裝置上而製成,其中該懸浮微粒為金屬及導熱性奈米微粒和微米微粒。
- 如申請專利範圍第1項之方法,其中該金屬複合基板包括有一利用無電鍍或電鍍法沈積之金屬。
- 如申請專利範圍第1項之方法,其中該金屬複合基板之熱膨脹係數可利用不同類型之金屬及合金加以調整。
- 如申請專利範圍第1項之方法,其中該金屬複合基板之熱膨脹係數係利用不同類型之微粒材料、不同尺寸分佈之微粒、或不同體積百分比之微粒加以調整。
- 如申請專利範圍第1項之方法,其中該發光裝置包括一垂直p側在下或n側在下裝置。
- 如申請專利範圍第1項之方法,其中該發光裝置包括一個螢光裝置,以將來自該裝置之光輸出轉換成白色光。
- 如申請專利範圍第6項之方法,其中該螢光裝置係多層型式,包括間隔之聚合物層和螢光體層。
- 如申請專利範圍第6項之方法,其中該螢光裝置係直接貼在該發光裝置上。
- 如申請專利範圍第6項之方法,其中該螢光裝置係一分立元件。
- 如申請專利範圍第9項之方法,其中該螢光裝置包括各種不同光學圖案,以提高發光裝置之光輸出一致性。
- 如申請專利範圍第6項之方法,其中該螢光裝置包括一單一材料或多種具不同發射波長之材料。
- 如申請專利範圍第6項之方法,其中該螢光裝置之螢光體層的厚度於越接近發光裝置處越厚。
- 如申請專利範圍第1項之方法,其中該發光裝置係裝入含有電絕緣且導熱介質的一封裝件內。
- 如申請專利範圍第13項之方法,其中該介質包括一個電絕緣且導熱之液體或高導熱性的奈米及微米顆粒。
- 一種具有一金屬複合基板的高功率發光裝置,其包括一高導熱性與熱膨脹係數匹配之基板,其中該金屬複合基板係將含有懸浮微粒的一金屬或一金屬合金溶液以無電鍍或電解電鍍方式鍍在發光裝置上而製成,且其中該懸浮微粒為金屬及導熱性奈米微粒和微米微粒。
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