TWI437577B - 可縮放記憶體系統 - Google Patents
可縮放記憶體系統 Download PDFInfo
- Publication number
- TWI437577B TWI437577B TW96131131A TW96131131A TWI437577B TW I437577 B TWI437577 B TW I437577B TW 96131131 A TW96131131 A TW 96131131A TW 96131131 A TW96131131 A TW 96131131A TW I437577 B TWI437577 B TW I437577B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- memory device
- data
- bit stream
- command
- Prior art date
Links
- 230000004044 response Effects 0.000 claims description 14
- 230000006870 function Effects 0.000 claims description 13
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- 239000000203 mixture Substances 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims 2
- 240000007320 Pinus strobus Species 0.000 description 47
- 238000010586 diagram Methods 0.000 description 39
- 238000000926 separation method Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 238000012546 transfer Methods 0.000 description 15
- 230000000977 initiatory effect Effects 0.000 description 10
- 238000003860 storage Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000630 rising effect Effects 0.000 description 7
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- 230000007246 mechanism Effects 0.000 description 5
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- 230000001360 synchronised effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
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- 230000002411 adverse Effects 0.000 description 1
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- 238000005549 size reduction Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83932906P | 2006-08-22 | 2006-08-22 | |
| US86877306P | 2006-12-06 | 2006-12-06 | |
| US90200307P | 2007-02-16 | 2007-02-16 | |
| US89270507P | 2007-03-02 | 2007-03-02 | |
| US11/840,692 US7904639B2 (en) | 2006-08-22 | 2007-08-17 | Modular command structure for memory and memory system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200828338A TW200828338A (en) | 2008-07-01 |
| TWI437577B true TWI437577B (zh) | 2014-05-11 |
Family
ID=39106444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96131131A TWI437577B (zh) | 2006-08-22 | 2007-08-22 | 可縮放記憶體系統 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2062261A4 (enExample) |
| JP (2) | JP5575474B2 (enExample) |
| KR (2) | KR101476463B1 (enExample) |
| CN (2) | CN102760476A (enExample) |
| CA (1) | CA2659828A1 (enExample) |
| TW (1) | TWI437577B (enExample) |
| WO (1) | WO2008022454A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7865756B2 (en) | 2007-03-12 | 2011-01-04 | Mosaid Technologies Incorporated | Methods and apparatus for clock signal synchronization in a configuration of series-connected semiconductor devices |
| US8781053B2 (en) | 2007-12-14 | 2014-07-15 | Conversant Intellectual Property Management Incorporated | Clock reproducing and timing method in a system having a plurality of devices |
| US8467486B2 (en) | 2007-12-14 | 2013-06-18 | Mosaid Technologies Incorporated | Memory controller with flexible data alignment to clock |
| CN102165529B (zh) * | 2008-09-30 | 2014-12-31 | 考文森智财管理公司 | 具有输出延迟调整的串联存储器系统 |
| US7957173B2 (en) * | 2008-10-14 | 2011-06-07 | Mosaid Technologies Incorporated | Composite memory having a bridging device for connecting discrete memory devices to a system |
| CN102257573B (zh) * | 2008-12-18 | 2014-11-05 | 考文森智财管理公司 | 错误检测方法和包括一个或多个存储器设备的系统 |
| US20110002169A1 (en) | 2009-07-06 | 2011-01-06 | Yan Li | Bad Column Management with Bit Information in Non-Volatile Memory Systems |
| US20110258366A1 (en) * | 2010-04-19 | 2011-10-20 | Mosaid Technologies Incorporated | Status indication in a system having a plurality of memory devices |
| WO2011134051A1 (en) * | 2010-04-26 | 2011-11-03 | Mosaid Technologies Incorporated | Serially connected memory having subdivided data interface |
| US8856482B2 (en) * | 2011-03-11 | 2014-10-07 | Micron Technology, Inc. | Systems, devices, memory controllers, and methods for memory initialization |
| US9239806B2 (en) | 2011-03-11 | 2016-01-19 | Micron Technology, Inc. | Systems, devices, memory controllers, and methods for controlling memory |
| US9342446B2 (en) | 2011-03-29 | 2016-05-17 | SanDisk Technologies, Inc. | Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache |
| CN102508797B (zh) * | 2011-10-27 | 2015-02-11 | 忆正存储技术（武汉）有限公司 | 闪存控制扩展模块、控制器、存储系统及其数据传输方法 |
| TWI581267B (zh) | 2011-11-02 | 2017-05-01 | 諾瓦晶片加拿大公司 | 快閃記憶體模組及記憶體子系統 |
| US8825967B2 (en) | 2011-12-08 | 2014-09-02 | Conversant Intellectual Property Management Inc. | Independent write and read control in serially-connected devices |
| US8966151B2 (en) * | 2012-03-30 | 2015-02-24 | Spansion Llc | Apparatus and method for a reduced pin count (RPC) memory bus interface including a read data strobe signal |
| US9760149B2 (en) | 2013-01-08 | 2017-09-12 | Qualcomm Incorporated | Enhanced dynamic memory management with intelligent current/power consumption minimization |
| KR20150110918A (ko) | 2014-03-21 | 2015-10-05 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| US9792227B2 (en) * | 2014-08-19 | 2017-10-17 | Samsung Electronics Co., Ltd. | Heterogeneous unified memory |
| JP6453718B2 (ja) * | 2015-06-12 | 2019-01-16 | 東芝メモリ株式会社 | 半導体記憶装置及びメモリシステム |
| KR102296740B1 (ko) * | 2015-09-16 | 2021-09-01 | 삼성전자 주식회사 | 메모리 장치 및 그것을 포함하는 메모리 시스템 |
| FR3041806B1 (fr) * | 2015-09-25 | 2017-10-20 | Stmicroelectronics Rousset | Dispositif de memoire non volatile, par exemple du type eeprom, ayant une capacite memoire importante, par exemple 16mbits |
| KR102457820B1 (ko) * | 2016-03-02 | 2022-10-24 | 한국전자통신연구원 | 메모리 인터페이스 장치 |
| KR102532528B1 (ko) * | 2016-04-07 | 2023-05-17 | 에스케이하이닉스 주식회사 | 메모리 장치 및 이의 동작 방법 |
| KR102731614B1 (ko) * | 2016-08-26 | 2024-11-21 | 삼성전자주식회사 | 시리얼 통신으로 메모리를 제공하기 위한 장치 및 방법 |
| KR102669694B1 (ko) * | 2016-09-28 | 2024-05-28 | 삼성전자주식회사 | 서로 직렬로 연결된 스토리지 장치들 중 애플리케이션 프로세서에 직접 연결되지 않는 스토리지 장치를 리셋시키는 전자 기기 및 그것의 동작 방법 |
| KR102514717B1 (ko) * | 2016-10-24 | 2023-03-27 | 삼성전자주식회사 | 메모리 컨트롤러 및 이를 포함하는 메모리 시스템 |
| KR102336666B1 (ko) * | 2017-09-15 | 2021-12-07 | 삼성전자 주식회사 | 메모리 장치 및 이를 포함하는 메모리 시스템 |
| KR20190112546A (ko) * | 2018-03-26 | 2019-10-07 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작 방법 |
| US10372330B1 (en) * | 2018-06-28 | 2019-08-06 | Micron Technology, Inc. | Apparatuses and methods for configurable memory array bank architectures |
| US11043488B2 (en) * | 2019-01-24 | 2021-06-22 | Western Digital Technologies, Inc. | High voltage protection for high-speed data interface |
| KR102708771B1 (ko) | 2020-05-25 | 2024-09-20 | 삼성전자주식회사 | 디스플레이 구동 장치 및 디스플레이 구동 장치를 포함하는 디스플레이 장치 |
| CN118251724A (zh) * | 2021-11-19 | 2024-06-25 | 株式会社索思未来 | 存储器电路 |
| KR20230085629A (ko) | 2021-12-07 | 2023-06-14 | 에스케이하이닉스 주식회사 | 저장 장치 및 그 동작 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07327179A (ja) * | 1994-05-31 | 1995-12-12 | Canon Inc | 複数映像切替装置 |
| US5729683A (en) * | 1995-05-18 | 1998-03-17 | Compaq Computer Corporation | Programming memory devices through the parallel port of a computer system |
| US6144576A (en) * | 1998-08-19 | 2000-11-07 | Intel Corporation | Method and apparatus for implementing a serial memory architecture |
| JP3853537B2 (ja) * | 1999-04-30 | 2006-12-06 | 株式会社日立製作所 | 半導体メモリファイルシステム |
| US6449308B1 (en) * | 1999-05-25 | 2002-09-10 | Intel Corporation | High-speed digital distribution system |
| US7356639B2 (en) * | 2000-01-05 | 2008-04-08 | Rambus Inc. | Configurable width buffered module having a bypass circuit |
| JP2001266579A (ja) * | 2000-01-12 | 2001-09-28 | Hitachi Ltd | 不揮発性半導体記憶装置および半導体ディスク装置 |
| TW504694B (en) * | 2000-01-12 | 2002-10-01 | Hitachi Ltd | Non-volatile semiconductor memory device and semiconductor disk device |
| US6754129B2 (en) * | 2002-01-24 | 2004-06-22 | Micron Technology, Inc. | Memory module with integrated bus termination |
| US20040022022A1 (en) * | 2002-08-02 | 2004-02-05 | Voge Brendan A. | Modular system customized by system backplane |
| US7308524B2 (en) * | 2003-01-13 | 2007-12-11 | Silicon Pipe, Inc | Memory chain |
| JP2004110849A (ja) * | 2003-12-01 | 2004-04-08 | Toshiba Corp | 半導体システム及びメモリカード |
| US8375146B2 (en) * | 2004-08-09 | 2013-02-12 | SanDisk Technologies, Inc. | Ring bus structure and its use in flash memory systems |
-
2007
- 2007-08-22 KR KR1020097005767A patent/KR101476463B1/ko not_active Expired - Fee Related
- 2007-08-22 WO PCT/CA2007/001469 patent/WO2008022454A1/en not_active Ceased
- 2007-08-22 CN CN2012101119432A patent/CN102760476A/zh active Pending
- 2007-08-22 TW TW96131131A patent/TWI437577B/zh not_active IP Right Cessation
- 2007-08-22 KR KR1020127021608A patent/KR101476515B1/ko not_active Expired - Fee Related
- 2007-08-22 CA CA002659828A patent/CA2659828A1/en not_active Abandoned
- 2007-08-22 CN CN2007800313409A patent/CN101506895B/zh not_active Expired - Fee Related
- 2007-08-22 JP JP2009524855A patent/JP5575474B2/ja not_active Expired - Fee Related
- 2007-08-22 EP EP07800496A patent/EP2062261A4/en not_active Withdrawn
-
2012
- 2012-08-21 JP JP2012182111A patent/JP2012226786A/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| CA2659828A1 (en) | 2008-02-28 |
| CN102760476A (zh) | 2012-10-31 |
| KR20090045366A (ko) | 2009-05-07 |
| JP5575474B2 (ja) | 2014-08-20 |
| WO2008022454A1 (en) | 2008-02-28 |
| CN101506895B (zh) | 2012-06-27 |
| TW200828338A (en) | 2008-07-01 |
| KR101476463B1 (ko) | 2014-12-24 |
| KR101476515B1 (ko) | 2014-12-24 |
| KR20120110157A (ko) | 2012-10-09 |
| JP2012226786A (ja) | 2012-11-15 |
| JP2010501916A (ja) | 2010-01-21 |
| EP2062261A1 (en) | 2009-05-27 |
| CN101506895A (zh) | 2009-08-12 |
| EP2062261A4 (en) | 2010-01-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |