TWI430040B - Analytical method, exposure method and component manufacturing method - Google Patents

Description

Analytical method, exposure method, and component manufacturing method

The present invention relates to an analytical method, an exposure method, and a device manufacturing method for analyzing an exposure failure of a substrate exposed through a liquid.

In the present application, priority is claimed in Japanese Patent Application No. 2005-261887, filed on Sep. 9, 2005.

Among the exposure apparatuses used in the lithography process, there is a liquid immersion exposure apparatus which exposes a substrate through a liquid as disclosed in the following patent documents.

[Patent Document 1] International Publication No. 99/49504

When the substrate exposed by the liquid immersion method causes poor exposure, for example, it is important to specify the cause of poor exposure and take appropriate treatment. Therefore, it is desirable to provide a method for correctly analyzing the poor exposure of a substrate exposed by a liquid immersion method.

It is an object of the present invention to provide an analytical method for analyzing exposure defects of a substrate exposed by a liquid immersion method. Further, an object of the invention is to provide an exposure method for exposing a substrate by analyzing the state of the substrate by the analysis method, and a device manufacturing method using the exposure method.

In the present invention, the following configurations of the respective drawings shown in the corresponding embodiments are employed. However, the symbols included in parentheses in each element are merely examples of the elements, and are not intended to limit the elements.

According to a first aspect of the present invention, there is provided an analysis method for analyzing an exposure failure of a substrate (P) exposed through a liquid (LQ), characterized by comprising: a development step of developing a substrate (P) (SA60) a first measuring step (SA50) for measuring the abnormality of the substrate (P) before development; a second measuring step (SA70) for measuring the abnormality of the substrate (P) after development; and according to the first measuring step (SA50) The measurement result of the second measurement step (SA70) and the analysis step (SA80) for analyzing the substrate (P) exposure failure by the liquid (LQ) exposure.

According to the first aspect of the present invention, it is possible to accurately analyze the exposure failure of the substrate exposed through the liquid.

According to a second aspect of the present invention, there is provided an exposure method comprising: a step of exposing a substrate (P) through a liquid (LQ); and analyzing a substrate (P) state by an analysis method of the above aspect A step of.

According to the second aspect of the present invention, the substrate can be favorably exposed by using the analysis result of the substrate exposure failure.

According to a third aspect of the present invention, there is provided an exposure method for exposing a substrate (P) through a liquid (LQ), characterized in that a film forming the outermost layer of the substrate (P) is obtained before exposure of the substrate (P) The relationship between the receding contact angle of the liquid (LQ) on (for example, Tc) and the defect level of the substrate after exposure.

According to the third aspect of the present invention, the substrate can be favorably exposed by using the relationship between the liquid receding contact angle and the substrate defect level after exposure.

According to a fourth aspect of the present invention, there is provided a device manufacturing method using the above-described exposure method.

According to the fourth aspect of the present invention, an element is manufactured by an exposure method which enables a substrate to be well exposed.

According to the present invention, it is possible to accurately analyze the exposure failure of the substrate exposed through the liquid, and use the analysis result to expose the substrate well. Therefore, it is possible to manufacture an element having desired properties.

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

<First embodiment>

The first embodiment will be described. Fig. 1 is a view showing a component manufacturing system SYS including an exposure apparatus EX according to the first embodiment. In FIG. 1, the component manufacturing system SYS includes an exposure device EX and a coating and developing device CD connected to the exposure device EX.

The exposure apparatus EX includes a mask stage 3 for holding the mask M to move, and a substrate stage 4 having a substrate holder 4H capable of holding the substrate P, and the substrate P can be held by the substrate holder 4H to move; The illumination optical system IL is configured to illuminate the mask M held by the mask stage 3 with the exposure light EL; the projection optical system PL projects the pattern image of the mask M illuminated by the exposure light EL onto the substrate P; And the control device 7 controls the overall operation of the exposure device EX.

In the present embodiment, a case where a scanning exposure apparatus (so-called scanning stepper) is used as the exposure apparatus EX will be described as an example in which the mask M and the substrate P are simultaneously moved in the scanning direction. The pattern image of the mask M is exposed to the substrate P. In the following description, the synchronous moving direction (scanning direction) of the mask M and the substrate P in the horizontal plane is set to the Y-axis direction, and the direction orthogonal to the Y-axis direction in the horizontal plane is set to the X-axis direction (non-scanning direction). The direction parallel to the X-axis and Y-axis directions and parallel to the optical axis AX of the projection optical system PL is set to the Z-axis direction. Further, the directions of rotation (inclination) around the X-axis, the Y-axis, and the Z-axis are θ X, θ Y , and θ Z directions, respectively.

The exposure apparatus EX of the present embodiment is a liquid immersion exposure apparatus which is suitable for the liquid immersion method in order to substantially shorten the exposure wavelength to improve the resolution and substantially enlarge the depth of focus. In the exposure apparatus EX, the liquid immersion area LR of the liquid LQ is formed on the substrate P held by the substrate stage 4, and the exposure light EL is irradiated onto the substrate P through the liquid immersion area LR of the liquid LQ to expose the substrate P. In the present embodiment, water (pure water) is used as the liquid LQ.

The coating and developing device CD includes a coating device for coating a predetermined film on a substrate of the substrate P before the exposure process, and a developing device for developing the substrate P after the exposure process. The exposure device EX is connected to the coating and developing device CD through the interface IF. The substrate P can be transported between the exposure device EX and the coating and developing device CD through the dielectric surface IF by a transfer device (not shown).

2 is a view showing an example of a substrate P (a substrate including a predetermined film coated by a coating device that coats the developing device CD). In FIG. 2, the substrate P has a substrate W such as a semiconductor wafer, a first film Rg coated on the substrate W, and a second film Tc coated on the first film Rg. The first film Rg is a film made of a photosensitive material (photoresist). The second film Tc is a film called a top coat film, and has a function of protecting the first film Rg or the substrate W composed of, for example, a photosensitive material from the liquid LQ, and has liquid repellency (water repellency) with respect to the liquid LQ. Further, by providing the second film Tc of the liquid-repellent film, the recovery property of the liquid LQ can be improved. The first film Rg is formed, for example, by applying a photosensitive material (photoresist) to the substrate W by spin coating. Similarly, the second film Tc is also formed by coating a material for forming a top coat film. In order to form the liquid immersion area LR of the liquid LQ on the second film Tc of the substrate P, the second film Tc of the substrate P is formed into a liquid contact surface which is in contact with the liquid LQ of the liquid immersion area LR.

Next, the exposure apparatus EX will be described with reference to Fig. 3 . Fig. 3 is a view showing a schematic configuration of an exposure apparatus EX of the present embodiment. The exposure apparatus EX includes a liquid immersion system 1 that fills the optical path space K of the exposure light EL near the image plane of the projection optical system PL with a liquid LQ to form a liquid immersion area LR. The operation of the liquid immersion system 1 is controlled by the control device 7. The liquid immersion system 1 is filled with a liquid LQ to fill the final optical element FL (the closest to the image plane of the projection optical system PL among the plurality of optical elements of the projection optical system PL) and the substrate P on the substrate holder 4H ( The optical path space K of the exposure light EL disposed between the surfaces of the image plane side of the projection optical system PL forms a liquid immersion area LR on the substrate P.

The exposure apparatus EX fills the optical path space K of the exposure light EL with the liquid LQ using the liquid immersion system 1 at least while the pattern image of the mask M is projected on the substrate P. The exposure apparatus EX illuminates the substrate P (held on the substrate holder 4H) by the exposure light EL that has passed through the mask M through the projection optical system PL and the liquid LQ filled in the optical path space of the exposure light EL. The pattern image of the cover M is projected onto the substrate P. Further, the exposure apparatus EX of the present embodiment employs a partial liquid immersion method in which the liquid LQ filled in the optical path space K of the exposure light EL between the final optical element FL and the substrate P is larger than the projection area AR. The liquid immersion area LR of the liquid LQ which is smaller than the substrate P is locally formed on a portion of the substrate P including the projection area AR of the projection optical system PL.

Further, the liquid immersion area LR may be formed not only on the substrate P but also on the image side of the projection optical system PL and disposed on an object facing the lower surface of the final optical element FL, for example, a substrate. One part of the stage 4 and the like.

The illumination optical system IL illuminates a predetermined illumination area on the mask M with exposure light EL of uniform illumination distribution. As the exposure light EL emitted from the illumination optical system IL, for example, a far-ultraviolet light (DUV light) such as a bright line (g line, h line, i line) emitted from a mercury lamp and KrF excimer laser light (wavelength 248 nm) is used. , vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm). In the present embodiment, ArF excimer laser light is used.

The mask stage 3 can be moved in the X-axis, the Y-axis, and the θ Z direction while holding the mask M by driving the mask stage driving device 3D including an actuator such as a linear motor. The position information of the mask stage 3 (further, the mask M) is measured by the laser interferometer 3L. The laser interferometer 3L measures the position information of the reticle stage 3 using the moving mirror 3K provided on the reticle stage 3. The control device 7 drives the mask stage driving device 3D based on the measurement result of the laser interferometer 3L to control the position of the mask M held by the mask stage 3. Further, the reticle referred to herein includes a reticle formed with a reduced pattern of elements projected onto the substrate. Further, in the present embodiment, a transmissive reticle is used as the reticle, but a reflective reticle can also be used.

In addition, the moving mirror 3K may be not only a plane mirror, but also a corner 隅稜鏡 (retroreflector) or a method of fixing the moving mirror 3K to the reticle stage 3, for example, using a visor The end surface (side surface) of the stage 3 is mirror-formed by a mirror surface. Further, the reticle stage 3 can be configured to perform coarse and fine movement as disclosed in Japanese Laid-Open Patent Publication No. Hei 8-130179 (corresponding to U.S. Patent No. 6,721,034).

The projection optical system PL has a plurality of optical elements that are projected on the substrate P at a predetermined projection magnification, and these optical elements are held by the lens barrel PK. The projection optical system PL of the present embodiment is a reduction system having a projection magnification of, for example, 1/4, 1/5, or 1/8, for forming a reduced image of the mask pattern in a conjugate with the illumination region. Projection area AR. Further, the projection optical system PL may be any one of a reduction system, an equal magnification system, and an amplification system. Further, the projection optical system PL may be any one of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, or a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the projection optical system PL may form either an inverted image or an erect image.

The substrate stage 4 has a substrate holder 4H for holding the substrate P, and can be driven by the substrate stage driving device 4D including an actuator such as a linear motor, and the substrate P is held by the substrate holder 4H. The base member BP is moved in a six-degree-of-freedom direction in the X-axis, Y-axis, Z-axis, θ X, θ Y, and θ Z directions. The substrate holder 4H is disposed, for example, in the concave portion 4R provided on the substrate stage 4, and the upper surface 4F other than the concave portion 4R of the substrate stage 4 is substantially the same height as the surface of the substrate P held by the substrate holder 4H (same side) High) flat surface. This is because, for example, during the exposure operation of the substrate P, a part of the liquid immersion area LR is formed on the upper surface 4F beyond the surface of the substrate P. Further, only a part of the upper surface 4F of the substrate stage 4, for example, a predetermined area surrounding the substrate P (including a range in which the liquid immersion area LR is exceeded) may be formed substantially at the same height as the surface of the substrate P. Further, if the liquid path space K on the image plane side of the projection optical system PL is continuously filled with the liquid LQ (that is, the liquid immersion area LR can be favorably held), the surface of the substrate P of the substrate holder 4H and the substrate stage 4 can be held. There can also be a difference between the above 4F. Further, the substrate holder 4H and the substrate stage 4 may be integrally formed. However, in the present embodiment, the substrate holder 4H and the substrate stage 4 are separately formed, and the substrate is vacuum-adsorbed, for example. The holder 4H is fixed to the recess 4R.

The position information of the substrate stage 4 (further, the substrate P) is measured by the laser interferometer 4L. The laser interferometer 4L measures positional information of the substrate stage 4 in the X-axis, the Y-axis, and the θ Z direction by using the moving mirror 4K provided on the substrate stage 4. Further, the surface position information (position information in the Z-axis, θ X , and θ Y directions) held on the surface of the substrate P of the substrate stage 4 is detected by a focus level detecting system (not shown). The control device 7 drives the substrate stage driving device 4D based on the measurement result of the laser interferometer 4L and the detection result of the focus level detecting system to perform position control of the substrate P held by the substrate stage 4.

Further, the laser interferometer 4L can also measure the position of the substrate stage 4 in the Z-axis direction and the rotation information in the θ X and θ Y directions, and the details thereof are disclosed, for example, in Japanese Laid-Open Patent Publication No. 2001-510577 (corresponding to International Publication) Booklet No. 1999/28790). Further, instead of fixing the moving mirror 4K to the substrate stage 4, for example, a reflecting surface formed by mirror-finishing a part (side surface, etc.) of the substrate stage 4 may be used.

Further, the focus level detecting system detects the tilt information (rotation angle) in the θ X and θ Y directions of the substrate P by measuring the position information of the substrate P in the Z-axis direction by a plurality of measurement points, respectively. At least a portion of the plurality of measurement points may also be disposed in the liquid immersion area LR (or the projection area AR), or all of the measurement points may be disposed outside the liquid immersion area LR. Furthermore, for example, when the laser interferometer 4L can measure the position information of the Z axis, the θ X and the θ Y direction of the substrate P, the focus level detection system may not be provided, and at least the laser interferometer 4L is used in the exposure operation. As a result of the measurement, the position of the substrate P in the Z-axis, θ X, and θ Y directions is controlled so that the positional information in the Z-axis direction can be measured in the exposure operation of the substrate P.

Next, the liquid immersion system 1 will be described with reference to Fig. 4 . Fig. 4 is an enlarged view showing a main part of Fig. 3. The liquid immersion system 1 is an optical path of the exposure light EL between the final optical element FL of the projection optical system PL and the substrate P (positioned at the position opposed to the final optical element FL and held by the substrate holder 4H). Space K. The liquid immersion system 1 includes a nozzle member 71 which is provided in the vicinity of the optical path space K of the exposure light EL between the final optical element FL and the substrate P, and has a supply port 12 for supplying the liquid LQ to the optical path space K and a recovery liquid LQ. a recovery port 22; the liquid supply device 11 supplies the liquid LQ to the supply port 12 through the supply pipe 13 and the supply flow path 14 formed inside the nozzle member 71; and the liquid recovery device 21 is formed through the nozzle member The internal recovery flow path 24 and the recovery pipe 23 of 71 recover the liquid LQ recovered from the recovery port 22 of the nozzle member 71. The supply port 12 and the supply pipe 13 are connected to each other through the supply flow path 14. The recovery port 22 and the recovery pipe 23 are connected to each other through the recovery flow path 24. In the present embodiment, the nozzle member 71 is provided in a ring shape that surrounds the optical path space K of the exposure light EL. The supply port 12 for supplying the liquid LQ is provided on the inner side surface of the nozzle member 71 facing the optical path space K of the exposure light EL. The recovery port 22 for recovering the liquid LQ is a lower surface of the nozzle member 71 opposed to the surface of the substrate P. In the present embodiment, a porous member (mesh) 25 is disposed in the recovery port 22.

The liquid supply device 11 includes a temperature adjustment device for adjusting the temperature of the supplied liquid LQ, a deaerator for reducing the gas component of the liquid LQ, and a filter unit for removing foreign matter in the liquid LQ, which can be sent out. Clean and temperature-adjusted liquid LQ. Further, the liquid recovery device 21 is provided with a vacuum system or the like to recover the liquid LQ. The operations of the liquid supply device 11 and the liquid recovery device 21 are controlled by the control device 7. The liquid LQ sent from the liquid supply device 11 is supplied from the supply port 12 to the optical path space K of the exposure light EL after flowing through the supply flow path 14 of the supply pipe 13 and the nozzle member 71. Moreover, the liquid LQ recovered from the recovery port 22 by driving the liquid recovery device 21 passes through the recovery flow path 24 of the nozzle member 71, and is recovered into the liquid recovery device 21 through the recovery pipe 23. The control device 7 controls the liquid immersion system 1 to simultaneously fill the exposure light between the final optical element FL and the substrate P with the liquid LQ by simultaneously performing the liquid supply operation of the liquid supply device 11 and the liquid recovery operation of the liquid recovery device 21. The optical path space K of the EL partially forms a liquid immersion area LR of the liquid LQ in a partial region on the substrate P.

Next, a method of exposing the substrate P using the exposure apparatus EX described above will be described. The coating device that coats the developing device CD performs a process of coating (coating) the first film Rg composed of the photosensitive material on the upper surface of the substrate W. Then, a treatment (edge cleaning treatment) for removing a photosensitive material such as a peripheral region or a side surface of the substrate W by using a solvent or the like, and a predetermined treatment including baking treatment or the like are applied.

Next, a treatment of coating (coating) the second film Tc as the top coat film on the first film Rg on the substrate W is performed. As described above, the second film Tc has a function of protecting the first film Rg composed of the photosensitive material (formed on the substrate W) from the liquid LQ. Next, after the edge washing treatment is performed as needed, the predetermined treatment including the baking treatment is applied.

Thereafter, the substrate P is transported to the exposure device EX by a predetermined transport device. In the exposure apparatus EX, the liquid immersion area LR of the liquid LQ is formed on the second film Tc of the substrate P, and the exposure light EL is irradiated onto the substrate P.

FIG. 5 is a view for explaining an example of the positional relationship between the liquid immersion area LR and the substrate stage 4 on which the substrate P is held when the substrate P is exposed. As shown in FIG. 5, a plurality of irradiation regions S1 to S21 in a matrix form are set on the substrate P. As described above, the exposure apparatus EX of the present embodiment projects and exposes the pattern of the mask M to the substrate P while moving the mask M and the substrate P in the Y-axis direction (scanning direction). When the irradiation areas S1 to S21 of the substrate P are respectively exposed, the control device 7, for example, the projection area AR of the projection optical system PL and the liquid immersion of the liquid LQ covering the projection area AR, as indicated by an arrow y1 in FIG. The region LR moves relative to the substrate P, and the liquid LQ that has passed through the liquid immersion region LR irradiates the exposure light EL onto the substrate P. The control device 7 controls the operation of the substrate stage 4 so that the projection area AR (exposure light EL) of the projection optical system PL moves on the substrate P along the arrow y1. After the exposure of one irradiation region is completed, the control device 7 steps the substrate P (substrate stage 4) to move the next irradiation region to the exposure start position, and thereafter, the substrate P is stepwise scanned. The respective irradiation areas S1 to S21 are sequentially scanned and exposed while being moved.

The exposed substrate P may cause a poor exposure. Poor exposure, including defects in the pattern formed on the substrate P by exposure. The cause of the poor exposure (pattern defect) includes at least one of the abnormality of the second film Tc formed on the surface of the substrate P and the foreign matter (bubble, particles) in the liquid LQ.

The abnormality of the second film Tc includes a state in which the liquid LQ penetrates into the second film Tc, a state in which foreign matter (bubbles or particles) are present in the second film Tc, a state in which the second film Tc is partially peeled off, and a state in which the second film Tc is removed. At least one of the states in which foreign matter (particles) are attached.

When the substrate P is immersed and exposed, the liquid LQ of the liquid immersion area LR comes into contact with the second film Tc formed on the surface of the substrate P. For example, as shown in the schematic view of FIG. 6, the liquid contacting the second film Tc on the substrate P LQ may penetrate (immerse) into the inside of the second film Tc. In the example shown in Fig. 6, the liquid LQ that has penetrated into the inside of the second film Tc exists between the first film Rg and the second film Tc. When the exposure light EL is applied to the substrate P in such a state, the exposure light EL may be caused to change the irradiation state of the first film Rg (or the substrate W) by the infiltrated liquid LQ. That is, in the interface between the second film Tc and the infiltrated liquid, the optical path of the exposure light EL may vary. When the exposure light EL changes the interface between the second film Tc and the infiltrated liquid, the exposure light EL does not reach the desired position of the first film Rg, and does not form a desired pattern image, so that it is formed. A defect or the like is generated in the pattern of the substrate W to cause a defect in exposure. Further, in one portion of the exposure light EL, there is a possibility that the interface between the liquid LQ penetrating into the second film Tc and the second film Tc is reflected, and the exposure light EL having the desired light amount (strength) cannot be irradiated. Bad condition of film Rg. Further, there is a possibility that the exposure light EL is scattered by the infiltrated liquid LQ.

Moreover, as shown in the schematic view of FIG. 7, the shape of the second film Tc may be locally changed by expanding the second film Tc by the liquid LQ that has penetrated into the inside of the second film Tc. In the case of FIG. 7, there is a possibility that a problem such as a change in the optical path of the exposure light EL may occur, and a pattern formed on the substrate W may be defective or the like, which may cause exposure failure.

Further, as shown in the schematic diagram of Fig. 8, when foreign matter such as bubbles or particles is present inside the second film Tc, the foreign matter (bubbles or particles) causes a change in the optical path of the exposure light EL, and the like. The pattern formed on the substrate W may cause defects or the like, resulting in poor exposure.

Further, as shown in the schematic view of Fig. 9, when a part of the second film Tc is peeled off, a problem such as a change in the optical path of the exposure light EL occurs due to the peeled portion, and a pattern formed on the substrate W is generated. Defects, etc., the possibility of poor exposure.

In addition, as shown in the schematic diagram of FIG. 10, a problem such as a change in the optical path of the exposure light EL due to foreign matter such as particles adhering to the second film Tc may occur, and a pattern formed on the substrate W may be defective. The possibility of poor exposure. Further, the foreign matter adhering to the second film Tc may be a water mark or the like.

Further, as shown in the schematic view of Fig. 11, a problem such as a change in the optical path of the exposure light EL due to foreign matter such as bubbles or particles in the liquid LQ in the liquid immersion area LR may be formed on the substrate W. The pattern generates defects and the like, and the possibility of poor exposure is generated.

In the present embodiment, the exposure failure of the substrate P exposed through the liquid LQ is analyzed, and the cause of the exposure failure is specified.

A method of analyzing the exposure failure of the substrate P exposed through the liquid LQ will be described with reference to the flowchart of Fig. 12 .

After the exposure processing (step SA30) of the substrate P that has passed through the liquid LQ is completed, the substrate P is subjected to baking treatment (post-baking) (step SA40). Next, a first measurement process for measuring an abnormality of the substrate P before development is performed (step SA50).

The first measurement process measures the abnormality of the second film Tc on the substrate P after exposure and before development, and specifies the position where the abnormality occurs, and uses a predetermined measurement device (defect inspection device) to obtain the vicinity of the position where the abnormality occurs. Image (optical image). Further, as the measuring device (defect inspection device), for example, a device described in the column of the prior art or the embodiment of JP-A-2002-519667 can be used.

Fig. 13 is a schematic view for explaining an action of measuring an abnormality of the substrate P using a predetermined measuring device. As shown in FIG. 13, a plurality of irradiation regions are set on the substrate P, and the measuring device measures the abnormality of the second film Tc on the substrate P before development. The measuring device has a predetermined measurement area MA for acquiring an image (optical image) of the surface P (second film Tc) of the substrate P in the measurement area MA. In the present embodiment, the measuring device is provided with a coordinate system (XY coordinate system) on the surface of the substrate P, and the second film Tc at each position of the coordinate system set on the substrate P is obtained while moving the measurement region MA and the substrate P relative to each other. Image (optical image). Next, for example, images in the measurement area MA adjacent to each other are compared, and based on the result of the comparison, a position where an abnormality occurs in the second film Tc is specified. The measuring device measures substantially the entire area of the surface of the substrate P.

Further, in the present embodiment, the image near the position where the abnormality is specified by the measuring device in the second film Tc on the substrate P is obtained by a scanning electron microscope (SEM) with higher precision. The measuring device outputs position information indicating an abnormality on the second film Tc to the scanning electron microscope. The scanning electron microscope can obtain an image near the position where the abnormality is generated with good efficiency based on the position information output from the measuring device.

After the end of the first measurement process, the substrate P is subjected to development processing (step SA60). The substrate P is subjected to development processing by a developing device that coats the developing device CD. Thereby, the second film Tc is removed, and when the first film Tc is a positive type resist, the portion irradiated with the exposure light EL is removed. Further, when the first film Rg is a negative photoresist, the portion irradiated by the exposure light EL remains. A pattern (wiring pattern) is formed on the substrate P (substrate W) by subjecting the substrate P to a predetermined process such as etching.

Next, a second measurement process for measuring the abnormality of the substrate P after development is performed (step SA70). In the second measurement process, the abnormality of the entire region on the substrate P (substrate W) was measured using the above-described measuring device (defect inspection device). The measuring device specifies a position where an abnormality (a defect in a pattern or a poor exposure) occurs in the substrate P (substrate W). Further, a scanning electron microscope (SEM) was used to obtain an image near the position where an abnormality occurred in the substrate P (substrate W).

Then, based on the measurement result of the first measurement process and the measurement result of the second measurement process, analysis processing for analyzing the exposure failure of the substrate P exposed through the liquid LQ is performed (step SA80). The analysis process is based on the measurement result of the first measurement process and the measurement result of the second measurement process, and the cause of the exposure failure (pattern defect) is specified.

In the analysis process of the present embodiment, it is determined whether or not the exposure failure (pattern defect) is caused by an abnormality of the second film Tc or a foreign matter caused by the liquid LQ.

For example, when the liquid LQ shown in FIG. 6 and FIG. 7 infiltrates into the inside of the second film Tc, as shown in FIG. 8, a state in which foreign matter (bubbles or particles) exists inside the second film Tc, as shown in FIG. The state in which the second film Tc is partially peeled off and the state in which the foreign matter (particles) are adhered to the second film Tc as shown in FIG. 10 is equal to the case where the second film Tc is abnormal, and the substrate P before the development is measured. In the measurement processing, for example, an image shown in FIG. 14A is obtained as an image near the position of the substrate P (second film Tc) where the abnormality has occurred.

Further, in the present embodiment, since the second film Tc is obtained as the image by the measuring device, it can be determined that the liquid LQ infiltrated as shown in Figs. 6 and 7 and the second state as shown in Fig. 8 The film Tc has a state in which a foreign matter exists, a state in which the second film Tc is partially peeled off as shown in FIG. 9, and a state in which a foreign matter adheres to the second film Tc as shown in FIG.

The second measurement process for measuring the substrate P after development is to obtain an image as shown in FIG. 14B as an image near the position of the substrate P (substrate W) corresponding to the position where the second film Tc is abnormal. In other words, it can be judged that a pattern defect (pollution failure) occurs on the substrate P (substrate W) due to the abnormality of the second film Tc. Fig. 14B shows an image in which a part of the wiring pattern formed on the substrate P (substrate W) is broken or a pattern defect in which the line width is uneven is generated.

In this case, there is an abnormality in the predetermined position of the substrate P (second film Tc) before development, and there is an abnormality (pattern defect) at a position corresponding to the position where the second film Tc is abnormal in the substrate P (substrate W) after development. In other words, it can be judged that the pattern defect (pollution failure) of the substrate P is caused by the abnormality of the second film Tc.

On the other hand, as shown in FIG. 15A, the substrate P (second film Tc) before development is not abnormal, and the substrate P (substrate W) after development is abnormal (pattern defect) as shown in FIG. 15B. At this time, it can be judged that the pattern defect (poor exposure) of the substrate P is caused by foreign matter (bubbles, particles) in the liquid LQ. Since the foreign matter in the liquid LQ does not affect the second film Tc and is not measured in the first measurement process, the substrate P (second film Tc) before development is not abnormal, and the substrate P after development When a pattern defect is present at a predetermined position (base material W), it can be judged that the pattern defect (pollution failure) of the substrate P is caused by foreign matter in the liquid LQ.

As described above, it is possible to determine that the exposure failure (pattern defect) is due to the second film Tc based on the measurement result of the measurement of the abnormality of the substrate P by the exposure of the liquid LQ, and the measurement of the abnormality of the substrate P after development. It is caused by an abnormality or by an abnormality other than the abnormality of the second film Tc. When an abnormality of the substrate P (second film Tc) is detected in the first measurement process, it can be determined that the exposure failure (pattern defect) is caused by the abnormality of the second film Tc, and is not detected in the first measurement process. When an abnormality (pattern defect) of the substrate P (base material W) is detected in the second measurement process, it can be determined that the exposure defect (pattern defect) is caused by foreign matter in the liquid LQ.

The control device 7 can set the exposure conditions based on the analysis result and expose the substrate P with the set exposure conditions. The exposure conditions include at least one of a liquid immersion condition when the liquid LQ fills the optical path space K of the exposure light EL and a movement condition of the substrate P with respect to the optical path space K. The liquid immersion conditions include at least one of a supply condition when the liquid LQ for filling the optical path space K of the exposure light EL is supplied, and a recovery condition when the liquid LQ is recovered. Further, the movement condition of the substrate P includes at least one of a moving speed, an acceleration (deceleration), a moving direction (moving trajectory), and a moving distance when moving in a predetermined direction.

When it is judged that the poor exposure (pattern defect) is caused by foreign matter (bubbles) in the liquid LQ, the control device 7 adjusts the bubble path in the liquid LQ, for example, by adjusting the optical path space K of the exposure light EL with the liquid LQ. The liquid immersion conditions or the movement conditions of the substrate P with respect to the optical path space K filled with the liquid LQ. Specifically, for example, in order to suppress generation of bubbles in the liquid LQ forming the liquid immersion area LR, the degassing ability of the deaerator of the liquid supply device 11 is increased, or each unit supplied from the supply port 12 to the optical path space K is adjusted. The amount of liquid supplied in time. Alternatively, in order to suppress generation of bubbles in the liquid LQ forming the liquid immersion area LR, the liquid recovery amount per unit time of the permeation recovery port 22 may be adjusted. Further, by adjusting the moving speed or acceleration of the liquid LR of the substrate P with respect to the liquid immersion area LR, generation of bubbles in the liquid LQ forming the liquid immersion area LR can be suppressed. Further, by adjusting the contact angle of the liquid contact surface of the substrate P (that is, the second film Tc) with the liquid LQ, generation of bubbles in the liquid LQ forming the liquid immersion area LR can be suppressed.

Further, when it is judged that the exposure failure (pattern defect) is caused by the abnormality of the second film Tc, appropriate treatment can be taken, for example, the material of the second film Tc is again selected, or the coating of the second film Tc by the coating device is adjusted. Conditions, etc. In addition, by adjusting the liquid immersion conditions or the movement conditions of the substrate P, the contact time between the second film Tc and the liquid LQ is adjusted, that is, the occurrence of abnormality of the second film Tc may be suppressed.

<Second embodiment>

Next, a second embodiment will be described with reference to a flowchart of Fig. 16 . In the following description, the same or equivalent components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

In the first embodiment, the abnormality of the substrate P after the exposure is measured. However, in the second embodiment, the abnormality measurement of the substrate P before the exposure is added. In other words, in FIG. 16, first, the abnormality of the substrate (wafer) W before exposure is measured using the above-described measuring device (defect inspection device) or the like (step SA1). Next, for example, an anti-reflection film is applied onto the substrate W (step SA2), and an abnormality of the anti-reflection film is measured (step SA3). Next, the first film Rg composed of the photosensitive material is applied onto the anti-reflection film (step SA10), and the abnormality of the first film Rg is measured (step SA15). Next, the second film Tc as the top coat film is applied onto the first film Rg (step SA20), and the abnormality of the second film Tc is measured (step SA25). Next, the exposure of the substrate P is sequentially performed (step SA30), the post-baking process of the exposed substrate P (step SA40), the first measurement process (step SA50), the development (step SA60), and the second measurement process (step SA40). Step SA70) and analysis processing (step SA80).

In this way, not only the presence or absence of abnormality of each film applied to the substrate P before exposure, but also the measurement result of the first measurement process and the measurement result of the second measurement process can be more accurately specified. The cause of poor exposure (pattern defects).

Further, in the first and second embodiments, the abnormality is detected in the first measurement process for measuring the substrate P before development, and is also detected in the second measurement process for measuring the substrate P after development. In the case of an abnormality, it can be judged that the poor exposure is caused by the abnormality of the second film Tc. Further, in the first and second embodiments, an abnormality is not detected in the first measurement process for measuring the substrate P before development, and an abnormality is detected in the second measurement process for measuring the substrate P after development. At this time, it can be judged that the poor exposure is caused by foreign matter in the liquid LQ. However, in the first and second embodiments, an abnormality may be detected in the first measurement process for measuring the substrate P before development, and may not be detected in the second measurement process for measuring the substrate P after development. An abnormal situation arises. For example, in FIG. 5, the liquid immersion area LR is formed on, for example, the first irradiation area S1 among the plurality of irradiation areas S1 to S21 set on the substrate P, and the first irradiation area S1 is made by the liquid LQ that has passed through the liquid immersion area LR. At the time of exposure, although the second film Tc in the first irradiation region S1 is not abnormal, when another irradiation region (for example, the irradiation regions S2, S6, S7, and S8 adjacent to the first irradiation region S1) is exposed, the film is covered. The liquid LQ of the liquid immersion area LR of the other irradiation areas may contact the first irradiation area S1. At this time, the second film Tc of the first irradiation region S1 is in contact with the liquid LQ for a long period of time, and as shown in FIGS. 6 and 7, the liquid LQ is allowed to permeate into the inside of the second film Tc. In other words, when the exposure light EL is applied to the first irradiation region S1, the second film Tc in the first irradiation region S1 is not abnormal, and the first irradiation region can be made in a state where no exposure failure occurs. S1 is well exposed, but after the exposure is completed, an abnormality may occur in the second film Tc in the first irradiation region S1. When such a situation occurs, the abnormality of the second film Tc in the first irradiation region S1 is detected in the first measurement process, but the substrate of the first irradiation region S1 is not detected in the second measurement process. W is abnormal. When the second film Tc is in contact with the liquid LQ for a predetermined period of time or less, it can be judged that the intrusion (infiltration) of the liquid LQ does not occur, and when the contact with the liquid LQ is for a predetermined time or longer, it can be judged. Intrusion (infiltration) of the liquid LQ is generated. Therefore, it is possible to set the exposure conditions in consideration of the predetermined time or to perform the reselection of the second film Tc.

Further, in each of the above-described embodiments, the measurement device (defect inspection device) measures the abnormality of the substrate P in the first measurement process and the second measurement process, and specifies the position of the abnormality, and the scanning electron microscope is used. Although the image near the position is obtained with higher precision, if it is possible to measure the abnormality of the substrate P, it is not necessary to use a scanning electron microscope, and any configuration may be adopted.

Further, in the above-described embodiments, the substrate P has a second film (top coating film) Tc for covering the first film Rg (which is formed of the photosensitive material formed on the substrate W), but may be provided without 2 The composition of the film Tc. At this time, in the first measurement process, the abnormality of the first film Rg on the substrate P before development was measured, and in the second measurement process, the abnormality of the substrate P after development was measured.

<Third embodiment>

Next, a third embodiment will be described. In the characteristic portion of the present embodiment, it is determined whether or not the film (the second film Tc or the first film Rg) of the outermost layer of the substrate P is poorly exposed (pattern defect) based on the surface contact angle θ _{R of the} liquid LQ on the surface of the substrate P. Less film.

The receding contact angle θ _{R will be} described with reference to the schematic diagram of Fig. 17 . The receding contact angle θ _R is a droplet of the liquid LQ attached to the surface of the object when the surface of the object is inclined with respect to the horizontal plane in a state where the droplet of the liquid LQ is attached to the surface of the object (here, the surface of the substrate P). The contact angle of the back side of the droplet when it starts to slide downward (starts moving) due to gravity. In other words, the receding contact angle θ _{R is} the contact angle of the back side of the droplet in the critical angle of the slip angle α of the droplet falling when the surface of the object to which the liquid droplet of the liquid LQ is attached is inclined. In addition, the meaning of the liquid droplets of the liquid LQ adhering to the surface of the object starting to slide downward (starting movement) due to gravity means the moment when the droplet starts to move, but it may be the moment before the movement starts, and the movement starts. At least part of the state after the moment. Further, the receding contact angle θ _R can be easily measured using a known measuring device.

In the inventors of the present application, a plurality of substrates P having films of different materials formed on the outermost layer are respectively immersed and exposed, and the pattern of the substrate P is analyzed by the method described in the first embodiment and the second embodiment. When the defect (poor exposure) and the pattern defect level (including at least one of the defect density and the number of defects) of each substrate P are inspected, it is found that the defect level depends on the difference of the receding contact angle θ _R of the liquid LQ on the surface of the substrate P. And different. More specifically, the inventors of the present application found that the larger the receding contact angle θ _{R of} the liquid LQ on the surface of the substrate P, the lower the defect level.

Fig. 18 is a view showing the relationship between the back contact angle θ _{R of the} liquid LQ on the surface of the substrate P and the defect level, and more specifically, an example of the relationship between the receding contact angle θ _R , the defect density, and the number of defects. In Fig. 18, points corresponding to the inspection results of the respective substrates P described above and an approximate curve in which the inspection results are matched are displayed. As shown in FIG. 18, the larger the receding contact angle θ _R is, the smaller the defect density and the number of defects are.

Therefore, as long as the information (approximate curve, etc.) showing the relationship between the receding contact angle θ _R and the defect level as shown in FIG. 18 is prepared in advance, only the receding contact angle θ _{R on} the film of the outermost layer of the substrate P to be exposed is measured, Even if the method described in the first embodiment or the second embodiment is not carried out, it is possible to estimate the defect level (defect density, number of defects, etc.) after the liquid immersion exposure of the substrate P, and to determine whether it is suitable for use. The film of the element pattern is formed by immersion exposure. As is apparent from Fig. 18, it is preferable to use a film having a receding contact angle θ _{R of,} for example, about 70 degrees or more.

Further, the receding contact angle θ _R may be used as a selected index of the film of the outermost layer of the substrate P. For example, by measuring the receding contact angle θ _{R of a} plurality of types of films, it is possible to select a plurality of films which are presumably in the case of poor exposure (pattern defects). Therefore, only the detailed investigation (liquid immersion exposure, defect inspection, etc.) of the selected film can select the most suitable film. In this way, it is possible to efficiently select an optimum film which is less likely to cause poor exposure (pattern defects) without performing detailed investigation (liquid immersion exposure, defect inspection, etc.) on all types of films.

Further, the exposure conditions of the substrate P can be determined based on the receding contact angle θ _{R on} the film of the outermost layer of the substrate P. For example, the exposure conditions include the movement conditions of the substrate P and/or the liquid immersion conditions (including at least one of the supply amount and the recovery amount of the liquid LQ). For example, when the exposure failure (pattern defect) is reduced by changing the speed of the substrate P, the substrate P can be set to be scanned in such a manner that the poor exposure (pattern defect) is reduced by the subsequent contact angle θ _R . The speed of movement during exposure. Further, not only the moving speed of the substrate P but also the at least one of the acceleration, the deceleration, and the moving direction of the substrate P can be changed in such a manner that the exposure failure (pattern defect) is reduced by the difference in the subsequent contact angle θ _R . Further, when the exposure failure (pattern defect) is reduced by changing the supply amount (and/or the amount of recovery) of the liquid LQ, it is also possible to reduce the exposure defect (pattern defect) by the subsequent contact angle θ _R . In this way, the supply amount (and/or recovery amount) of the liquid LQ is set.

In each of the above embodiments, pure water is used as the liquid LQ system. The advantage of pure water is that it can be easily obtained in a large number of semiconductor manufacturing plants, and has no adverse effect on the photoresist and the optical element (lens) on the substrate P. Further, since pure water has no adverse effect on the environment, since the content of impurities is extremely low, it is expected to have a function of cleaning the surface of the substrate P and the surface of the optical element provided on the front end surface of the projection optical system PL. In addition, when the pure water supplied by the factory or the like is low in purity, the exposure apparatus can also be provided with an ultrapure water maker. In general, pure water (water) has a refractive index n of approximately 1.44 for exposure light EL having a wavelength of about 193 nm, and when ArF excimer laser light (wavelength: 193 nm) is used as a light source for exposure light EL, the substrate is used. On P, the wavelength is shortened to 1/n, that is, about 134 nm, and high resolution can be obtained. Furthermore, since the depth of focus is about n times, that is, about 1.44 times, in the air, the projection optical system PL can be further increased as long as the depth of focus is the same as that in the air. The numerical aperture can also improve the resolution from this point of view. In each of the above embodiments, the optical element FL is attached to the tip end of the projection optical system PL, and the optical characteristics of the projection optical element PL, for example, aberration (spherical aberration, coma aberration), can be adjusted by the optical element. Further, as an optical element attached to the tip end of the projection optical system PL, an optical plate for adjusting the optical characteristics of the projection optical system PL may be used. Alternatively, it may be a parallel plane plate (cover glass, etc.) capable of transmitting the exposure light EL. Further, when the pressure between the optical element at the tip end of the projection optical system PL and the substrate P due to the flow of the liquid LQ is large, the optical element may not be made into a replaceable structure, but the optical element may be firmly fixed to be Will move due to this pressure. Further, in each of the above-described embodiments, the liquid crystal LQ is filled with the surface of the projection optical system PL and the substrate P. For example, the cover glass formed of the parallel flat plate may be mounted on the surface of the substrate P. The composition of the liquid LQ.

Further, in the above-described embodiment, the optical path space on the image plane side of the optical element of the front end of the projection optical system is filled with a liquid, but the object side of the front end optical element may be used as disclosed in the pamphlet of International Publication No. 2004/019128. The optical path space is also a liquid-filled projection optical system. Further, although the liquid LQ of each of the above embodiments is water, it may be a liquid other than water. For example, when the light source for the exposure light EL is a F ₂ laser, the F ₂ laser light cannot transmit water, and thus A liquid which can transmit F ₂ laser light can be used as the liquid LQ, for example, a fluorine-based fluid such as a fluorocarbon (PFPE, Pfluoro-polyether) or a fluorine-based oil. At this time, for example, a film is formed by a molecular structure substance containing a small polarity of fluorine, whereby a portion in contact with the liquid LQ is subjected to a lyophilization treatment. Further, as the liquid LQ, the exposure light EL may be used in the other embodiments. In the above embodiments, the liquid crystal LQ is filled with the surface of the projection optical system PL and the substrate P. However, for example, a parallel flat plate may be used. The cover slip is constructed. Further, it is also possible to use a liquid having a refractive index of about 1.6 to 1.8 as the liquid LQ. Further, the optical element FL can also be formed of a material having a refractive index higher than that of quartz or fluorite (for example, 1.6 or more).

Further, the substrate P of each of the above embodiments can be applied to a glass substrate for a display element, a ceramic wafer for a thin film magnetic head, or a photomask used in an exposure apparatus, in addition to a semiconductor wafer for semiconductor element manufacturing. Or the original version of the reticle (synthetic quartz, germanium wafer).

The exposure apparatus EX can be applied to a step-type scanning type scanning apparatus (scanning stepper) which can be applied to the step of scanning and exposing the pattern of the mask M in synchronization with the mask M and the substrate P. In the repeating type projection exposure apparatus (stepper), the pattern of the mask M is exposed once, and the substrate P is sequentially stepped and moved while the mask M and the substrate P are stationary.

Further, as the exposure apparatus EX, an exposure apparatus of a single exposure method in which the first pattern and the substrate P are substantially stationary is used, and a projection optical system (for example, 1/8 reduction ratio and no reflection element) is used. The refractive projection optical system) exposes the reduced image of the first pattern onto the substrate P at a time. In this case, it is also possible to apply the first exposure apparatus of the bonding method to the first image and the substrate P in a state where the second pattern and the substrate P are substantially stationary, and the second image is reduced by the projection optical system. The patterns are partially overlapped and exposed on the substrate P at one time. Further, the exposure apparatus of the bonding method can also be applied to an exposure apparatus of a step-joining method in which at least two pattern portions are superimposed and transferred on the substrate P, and the substrate P is sequentially moved. Further, in the above embodiments, the exposure apparatus including the projection optical system PL has been described as an example. However, the present invention is also applicable to an exposure apparatus and an exposure method that do not use the projection optical system PL. Even in the case where the projection optical system PL is not used, the exposure light can be irradiated onto the substrate through an optical member such as a mask or a lens, and the liquid immersion area can be formed in a predetermined space between the optical member and the substrate.

In addition, the present invention is also applicable to, for example, Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. A dual stage type exposure apparatus having a plurality of substrate stages as disclosed in Japanese Patent No. 6,208,407.

Furthermore, the present invention is also applicable to a substrate stage as disclosed in Japanese Laid-Open Patent Publication No. H11-135400 (corresponding to International Publication No. 1999/23692) and No. 2000-164504 (corresponding to U.S. Patent No. 6,897,963). An exposure device for holding the substrate and the measurement stage (loading the reference member on which the reference mark is formed and various photodetectors).

Further, in the above-described embodiment, the exposure apparatus is partially filled with the liquid between the projection optical system PL and the substrate P. However, the present invention is also applicable to, for example, Japanese Patent Laid-Open No. Hei 6-124873, No. Hei 10-303114. The immersion exposure apparatus disclosed in Japanese Patent No. 5,825,043, etc., is exposed in a state where the entire surface of the substrate to be exposed is immersed in a liquid.

The type of the exposure apparatus EX is not limited to the exposure apparatus for manufacturing a semiconductor element for exposing a semiconductor element pattern to the substrate P, and can be widely applied to an exposure apparatus for manufacturing a liquid crystal display element or a display, for manufacturing. Exposure devices such as thin film magnetic heads, photographic elements (CCD), micromachines, MEMS, DNA wafers, reticle, or reticle.

Further, in each of the above embodiments, a light-transmitting mask (a reticle) in which a predetermined light-shielding pattern (or a phase pattern, a light-reducing pattern) is formed on a substrate having light transparency is used, but for example, a US patent may be used. An optical mask (also referred to as a variable-shaping mask, such as a DMD including a non-light-emitting type image display element (spatial light modulator), is replaced by an electronic mask disclosed in Japanese Patent No. 6,778,257. The Digital Micro-mirror Device) or the like) forms a transmission pattern, a reflection pattern, or a light-emitting pattern according to an electronic material of a pattern to be exposed.

Moreover, the present invention is also applicable to an exposure apparatus (lithography) for exposing an equally spaced line pattern on a substrate P by forming an interference pattern on the substrate P as disclosed in, for example, International Publication No. 2001/035168. system).

Furthermore, the present invention can be applied, for example, to an exposure apparatus disclosed in Japanese Laid-Open Patent Publication No. 2004-519850 (corresponding to U.S. Patent No. 6,611,316), in which two mask patterns are synthesized on a substrate through a projection optical system. The double exposure of one of the illumination areas on the substrate is performed substantially simultaneously by one scanning exposure.

In addition, in the scope permitted by the laws of the countries designated or selected by the international patent application, all publications related to the exposure apparatus cited in the above embodiments and modifications, and the disclosure of the US patent are used as the text. Record one part.

As described above, the exposure apparatus EX according to the embodiment of the present application can maintain a predetermined mechanical precision, electrical precision, and optical precision by assembling various subsystems (including the respective constituent elements listed in the scope of application of the present application). Made by the way. In order to ensure these various precisions, various optical systems are used to adjust the optical precision before and after assembly, to adjust the mechanical precision for various mechanical systems, and to achieve electrical accuracy for various electrical systems. Adjustment. The process of assembling various subsystems to the exposure apparatus includes mechanical connection, wiring connection of the circuit, piping connection of the pneumatic circuit, and the like. Of course, before the various subsystems are assembled to the exposure apparatus, there are individual assembly processes for each system. When the processes of assembling the various subsystems to the exposure apparatus are completed, comprehensive adjustment is performed to ensure various precisions of the entire exposure apparatus. Further, the exposure apparatus is preferably manufactured in a clean room in which temperature and cleanliness are managed.

As shown in FIG. 19, the micro-elements such as semiconductor elements are manufactured through the steps of performing the function of the micro-element, the step 201 of performance design, and the step 202 of fabricating a photomask (reticle) according to the design procedure. Step 203 and step 204 of manufacturing a substrate constituting the element substrate (including the step of exposing the mask pattern to the substrate by the exposure apparatus EX of the above embodiment, the step of developing the exposed substrate, and the heating of the developed substrate (hardening) And a substrate processing flow such as an etching step, a component assembly step (including a processing flow such as a cutting step, a bonding step, and a packaging step) 205, an inspection step 206, and the like.

1. . . Liquid immersion system

7. . . Control device

EL. . . Exposure light

EX. . . Exposure device

LQ. . . liquid

LR. . . Liquid immersion area

P. . . Substrate

Rg. . . First film

Tc. . . Second film

W. . . Substrate

Fig. 1 is a schematic block diagram showing a component manufacturing system including an exposure apparatus according to a first embodiment.

Fig. 2 is a cross-sectional view showing an example of a substrate in a schematic manner.

Fig. 3 is a schematic block diagram showing the exposure apparatus of the first embodiment.

Figure 4 is a diagram for explaining a liquid immersion system.

Fig. 5 is a view for explaining an example of a positional relationship between a liquid immersion area and a substrate stage on which a substrate is held.

Figure 6 is a schematic view for explaining an abnormal example produced by a film.

Fig. 7 is a schematic view for explaining an abnormal example produced by a film.

Fig. 8 is a schematic view for explaining an abnormal example produced in the film.

Figure 9 is a schematic view for explaining an abnormal example produced by a film.

Figure 10 is a schematic view for explaining an abnormal example produced by a film.

Figure 11 is a schematic view for explaining an abnormal example produced in a film.

Fig. 12 is a flow chart for explaining the analysis method of the first embodiment.

Fig. 13 is a view for explaining measurement processing for measuring substrate abnormality.

Fig. 14A is a view showing an example of an optical image obtained by a measurement process.

Fig. 14B is a view showing an example of an optical image obtained by the measurement processing.

Fig. 15A is a view showing an example of an optical image obtained by a measurement process.

Fig. 15B is a view showing an example of an optical image obtained by the measurement processing.

Fig. 16 is a flow chart for explaining the analysis method of the second embodiment.

Fig. 17 is a view for explaining the receding contact angle of the third embodiment.

Figure 18 is a graph showing the relationship between the back contact angle of the liquid on the surface of the substrate and the defect level.

Fig. 19 is a flow chart for explaining an example of a micro component manufacturing step.

Claims (16)

An analytical method for analyzing a poor exposure of a substrate exposed through a liquid, comprising: a developing step of developing the substrate; a first measuring step for measuring the abnormality of the substrate before the developing; and measuring a second measurement step of the substrate abnormality after the development; and an analysis step of analyzing the exposure failure of the substrate exposed through the liquid according to the measurement result of the first measurement step and the measurement result of the second measurement step; Exposure of the substrate through the liquid is performed prior to the first measurement step and the second measurement step. An analysis method for analyzing a poor exposure of a substrate exposed through a liquid, comprising: a developing step of developing the substrate; and obtaining a first acquisition of information related to a surface of the substrate before the development a second obtaining step of obtaining information related to the surface of the substrate after development; and a result of obtaining the first obtaining step and a result of obtaining the second obtaining step, contacting the liquid with the liquid An analysis step of analyzing the exposure failure of the substrate exposed to the surface of the substrate. The analysis method of claim 1 or 2, wherein the poor exposure includes a defect of a pattern formed on the substrate by the exposure. The analytical method of claim 1 or 2, wherein the cause of the poor exposure is specified in the analyzing step. The analytical method of claim 4, wherein a predetermined film is formed on the surface of the substrate; and in the analyzing step, it is discriminated whether the poor exposure is caused by an abnormality of the film. The analytical method of claim 5, wherein the film comprises a protective film for protecting the photosensitive film formed on the substrate from the liquid. The analytical method of claim 5, wherein the abnormality of the film includes at least one of a state in which the liquid penetrates the film and a state in which the film adheres to the film. The analysis method of claim 4, wherein in the analyzing step, it is discriminated whether the exposure defect is caused by a foreign matter in the liquid. The analytical method of claim 8, wherein the foreign matter comprises a bubble. An exposure method comprising the steps of: exposing a substrate through a liquid; and the step of analyzing the state of the substrate by the analysis method according to any one of claims 1 to 9. The exposure method of claim 10, further comprising the step of setting an exposure condition based on the analysis result. A method of manufacturing a component, comprising: exposing a substrate of a component, that is, a substrate, using an exposure method according to any one of claims 10 to 11; a step of developing the exposed substrate; and a step of manufacturing the element using the developed substrate. The exposure method of claim 11, wherein the exposure condition comprises a movement condition of the substrate. The exposure method of claim 11, wherein the exposure condition comprises a immersion condition for forming a liquid immersion area of the liquid on the substrate. The exposure method of claim 14, wherein the liquid immersion condition comprises a supply condition for supplying the liquid on the substrate. The exposure method of claim 14, wherein the liquid immersion condition comprises a recovery condition for recovering the liquid from the liquid immersion area formed on the substrate.