TWI429111B - Method for manufacturing led package - Google Patents

Description

Method for manufacturing light emitting diode package structure

The present invention relates to a method of fabricating a semiconductor light emitting device, and more particularly to a method of fabricating a light emitting diode package structure.

A general light-emitting element such as a light-emitting diode package structure needs to form a single particle after a plurality of manufacturing steps, and then applied to various fields such as display, illumination, and the like.

The manufacturing process of the LED package structure usually includes processes such as epitaxy, cutting, and packaging. In the packaging stage, a solid crystal glue is usually disposed on the surface of a substrate, and the light-emitting diode grains are fixed to the above-mentioned solid crystal glue one by one. When the LEDs are packaged in batches, the above steps must be repeated and then followed by other processes.

In the above packaging process, the steps of forming a solid crystal glue and fixing the light-emitting diode die are repeated, resulting in a long package time and reduced efficiency. Therefore, how to provide a more efficient manufacturing method of the LED package structure is still a problem to be solved in the industry.

In view of the above, it is necessary to provide a more efficient method of fabricating a light emitting diode package structure.

A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a wafer layer and a flexible first substrate, wherein the first substrate side is disposed a glass layer, a side surface of the wafer layer is pasted on the glass layer; a plurality of patterned metal layers are formed on a surface of the wafer layer facing away from the glass layer; a wafer layer and a glass layer to form a plurality of light emitting diode crystal grains; stretching the first substrate to separate the light emitting diode crystal grains from each other; and providing a second substrate having a circuit structure formed on one side surface thereof And electrically connecting the metal layer of the die to the circuit structure of the second substrate and fixing the die to the side of the second substrate; removing the first substrate to form a plurality of light-emitting diode blanks; and packaging the coarse The embryo is such that one side of the second substrate forms an encapsulation layer that completely covers the die.

Compared with the prior art, the present invention utilizes a flexible first substrate to simultaneously fix a plurality of crystal grains to assist the conductive connection of the crystal grains to the circuit structure of the second substrate at the same time, which simplifies the process flow and improves the manufacturing efficiency.

10‧‧‧Substrate

11‧‧‧ Wafer layer

12‧‧‧Light-emitting diode grains

20‧‧‧First substrate

21‧‧‧ glass layer

30‧‧‧metal layer

40‧‧‧second substrate

41‧‧‧ Circuit structure

50‧‧‧Encapsulation layer

60, 60a, 60b, 60c‧‧‧ fluorescent powder layer

212‧‧‧Glass

1 is a process flow diagram of a method of fabricating a light emitting diode according to an embodiment of the invention.

2 to FIG. 14 are schematic diagrams showing respective steps of a method of manufacturing a light-emitting diode according to an embodiment of the present invention.

The invention will be further described in detail below with reference to the accompanying drawings.

FIG. 1 shows a flow of a manufacturing process of a light emitting diode package structure according to an embodiment of the present invention. The manufacturing method of the LED package structure generally includes the following processes: Providing a wafer layer and a flexible first substrate, wherein a side of the first substrate is provided with a glass layer, and one surface of the wafer layer is pasted on the glass layer; Forming a patterned metal layer on one side surface of the layer back glass layer; cutting the wafer layer and the glass layer to form a plurality of light emitting diode crystal grains; stretching the first substrate to make the first substrate Elastically expanding to separate the light-emitting diode dies from each other; providing a second substrate having a circuit structure on one side surface, electrically connecting the metal layer of the die to the circuit structure of the second substrate and fixing the die a second substrate side; removing the first substrate to form a plurality of light-emitting diode blanks; and encapsulating the rough blanks to form an encapsulation layer completely covering the crystal grains on a side of the second substrate.

The process will be described in detail below in conjunction with other diagrams.

Referring to FIG. 2 to FIG. 4 simultaneously, first, a wafer layer 11 and a flexible first substrate 20 are provided. The wafer layer 11 is a gallium nitride material and is grown on a substrate 10. A glass layer 21 is embedded on a surface of the first substrate 20. The wafer layer 11 is attached to the glass layer 21 by bonding or the like, and then the substrate 10 is removed. The size of the glass layer 21 is larger than the size of the wafer layer 11, and the boundary around the glass layer 21 exceeds the boundary of the wafer layer 11.

Referring also to FIG. 5, a patterned metal layer 30 is then formed on the surface of the wafer layer 11 that faces away from the glass layer 21. These metal layers 30 are formed on the surface of the wafer layer 11 by plating, sputtering, or the like, and are used as electrodes of the light-emitting diode.

Please refer to FIG. 6 and FIG. 7 to cut the wafer layer 11 and the glass layer 21 to form a shape. The plurality of light-emitting diode crystal grains 12 are formed. Each of the light emitting diode dies 12 has a corresponding number of metal layers 30. In this embodiment, the glass layer 21 is pre-cut into a plurality of individual glass bodies 212 before being bonded to the wafer layer 11, so that when the wafer layer 11 is diced, along the corresponding boundary of the glass body 212. Just fine. It can be understood that in other embodiments, the glass layer 21 may not be cut in advance so as to be cut together with the wafer layer 11.

Next, the first substrate 20 is stretched to elastically expand the first substrate 20 such that the light emitting diode chips 12 are separated from each other in the direction in which the first substrate 20 is stretched.

Referring to FIG. 8 and FIG. 9 , a second substrate 40 having a circuit structure 41 on one side is provided, so that the metal layer 30 of the die 12 and the circuit structure 41 of the second substrate 40 are made of conductive adhesive (not shown). The electrical connection is made and the die 12 is fixed to the side of the second substrate 40. The first substrate 20 is then removed to form a plurality of light emitting diode blanks.

Referring to FIG. 10, the rough blank is finally encapsulated such that an encapsulation layer 50 completely covering the die 12 is formed on one side of the second substrate 40.

The present invention utilizes the first substrate 20 having flexibility to simultaneously fix the plurality of crystal grains 12 to assist in electrically connecting the crystal grains 12 to the circuit structure 41 of the second substrate 40 at the same time, which simplifies the process flow and improves the manufacturing efficiency.

The light emitting diode may be provided with a phosphor layer 60 (see FIG. 11), and the phosphor layer 60 is coated on a surface of the glass layer 21 opposite to the wafer layer 11 and formed on the glass. Before the layer 21 is bonded to the wafer layer 11. It can be understood that the phosphor layer 60a (see FIG. 12) can also be coated between the glass layer 21 and the first substrate 20 and formed before the glass layer 21 is bonded to the wafer layer 11; The powder layer 60b (see FIG. 13) may also be applied to the surface of the encapsulation layer 50 after the encapsulation step; the phosphor layer 60c (see FIG. 14) is also It can be formed in the encapsulation layer 50 by mixing at the time of packaging.

In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, the changes made in accordance with the spirit of the present invention should be included in the scope of the present invention.

Claims (9)

A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a wafer layer and a flexible first substrate, wherein a side of the first substrate is provided with a glass layer, and one of the wafer layers is a side surface is attached to the glass layer; a plurality of patterned metal layers are formed on a surface of the wafer layer facing away from the glass layer; and the wafer layer and the glass layer are cut to form a plurality of light-emitting diodes a polar body grain; stretching the first substrate such that the light emitting diode crystal grains are separated from each other; providing a second substrate having a circuit structure formed on one surface thereof, the metal layer of the crystal grain and the second substrate The circuit structure is electrically connected and the die is fixed on the side of the second substrate; the first substrate is removed to form a plurality of light-emitting diode blank blanks; and the rough blank is encapsulated to form a complete cover on the second substrate side The encapsulation layer of the die; before the wafer layer is diced, the glass layer is pre-cut into a plurality of individual glass bodies. The method for manufacturing a light emitting diode package structure according to claim 1, wherein: before the glass layer is bonded to the wafer layer, a surface of the glass layer opposite to the wafer layer is coated. There is a layer of phosphor powder. The method for manufacturing a light emitting diode package structure according to claim 1, wherein: before the glass layer is bonded to the wafer layer, the glass layer and the first substrate are coated with fluorescent light. Powder layer. The method for manufacturing a light emitting diode package structure according to claim 1, wherein after the packaging step, the surface of the encapsulation layer is coated with a phosphor powder layer. The method of manufacturing a light emitting diode package structure according to claim 1, wherein a phosphor powder layer is mixed and formed in the package layer during packaging. The method for manufacturing a light emitting diode package structure according to claim 1, wherein: The wafer layer is formed from a surface of one substrate, and after the wafer layer is bonded to the glass layer, the substrate is removed. The method of manufacturing a light emitting diode package structure according to claim 1, wherein the wafer layer is a gallium nitride material. The method for manufacturing a light emitting diode package structure according to claim 1, wherein the patterned metal layer is formed on the wafer layer by electroplating or sputtering. The method for manufacturing a light emitting diode package structure according to claim 1, wherein the circuit structure and the patterned metal layer are electrically connected by a conductive paste.