TWI409976B - Light emitting diode pakage struture and the method thereof - Google Patents

Light emitting diode pakage struture and the method thereof Download PDF

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TWI409976B
TWI409976B TW99128472A TW99128472A TWI409976B TW I409976 B TWI409976 B TW I409976B TW 99128472 A TW99128472 A TW 99128472A TW 99128472 A TW99128472 A TW 99128472A TW I409976 B TWI409976 B TW I409976B
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substrate
emitting diode
support
light emitting
disposed
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TW99128472A
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Chinese (zh)
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TW201210079A (en
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Chao Hsiung Chang
Chieh Ling Chang
Shen Bo Lin
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Advanced Optoelectronic Tech
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Abstract

A method of encapsulating the light-emitting diode package structure includes the following steps: providing a substrate which has a first surface and a second surface opposite to the first surface; disposing a circuit structure which divides the substrate into several main practice places and the non- practice places on the first surface of the substrate; disposing the support structure on the substrate; disposing some dies in the main practice places; and disposing the package with covering the dies. The present invention also provides a method of manufacturing the substrate of the light-emitting diode.

Description

發光二極體封裝結構及其製造方法 Light-emitting diode package structure and manufacturing method thereof

本發明涉及一種發光二極體封裝結構,尤其涉及一種發光二極體封裝結構及其製造方法。 The invention relates to a light emitting diode package structure, in particular to a light emitting diode package structure and a manufacturing method thereof.

發光二極體(Light Emitting Diode,LED)的製作通常是先在一個樹脂或塑膠的基板上形成電路結構,然後將發光二極體晶粒固定於基板上並與電路結構電性連接,最後形成封裝層覆蓋發光二極體晶粒並切割形成複數個組件。 Light Emitting Diode (LED) is usually fabricated by forming a circuit structure on a resin or plastic substrate, and then fixing the LED die to the substrate and electrically connecting with the circuit structure, and finally forming The encapsulation layer covers the light emitting diode die and is cut to form a plurality of components.

然而,隨著當今發光二極體越來越薄型化的趨勢,使得承載發光二極體晶粒的基板也越來越薄。但是由於薄型基板厚度的減少,使得基板的剛性降低導致基板彎曲,進而導致基板不平整以及製造良率下降的缺失。因此,如何提供一種克服以上缺點的發光二極體封裝結構及其基板的製造方法是業界需要解決的一個課題。 However, with the trend of increasingly thinner LEDs today, substrates carrying light-emitting diode dies are becoming thinner and thinner. However, due to the reduction in the thickness of the thin substrate, the rigidity of the substrate is lowered to cause the substrate to bend, which in turn causes the substrate to be uneven and the manufacturing yield to be degraded. Therefore, how to provide a light emitting diode package structure and a method for manufacturing the same that overcome the above disadvantages is a problem to be solved in the industry.

有鑒於此,有必要提供一種加強基板剛度的發光二極體封裝結構及其基板的製造方法。 In view of the above, it is necessary to provide a light emitting diode package structure and a method of manufacturing the same that enhance the rigidity of the substrate.

一種發光二極體結構製造方法,其步驟包括:第一步驟,提供一基板,該基板具有一第一表面和相對的第二表面;第二步驟,設置電路結構於基板上,且該電路結構從第一表面延伸至第二表面;第三步驟,設置支撐結構於基板上;第四步驟,設置若干發光二極體晶粒於基板上,並與電路結構形成電連接;第五步驟,設置封裝層覆蓋發光二極體晶粒。 A method for fabricating a light emitting diode structure, the method comprising: a first step of providing a substrate having a first surface and an opposite second surface; and a second step of disposing a circuit structure on the substrate, and the circuit structure The third step extends to the second surface; the third step is to set the support structure on the substrate; in the fourth step, a plurality of light-emitting diode chips are disposed on the substrate and electrically connected with the circuit structure; The encapsulation layer covers the light emitting diode grains.

一種發光二極體封裝結構,包括基板,設置於基板上的電路結構,設置於基板上並與電路結構電連接的發光二極體晶粒,設置於基板上並覆蓋發光二極體晶粒的封裝層,及設置於基板上的支撐結構。 A light emitting diode package structure includes a substrate, a circuit structure disposed on the substrate, a light emitting diode die disposed on the substrate and electrically connected to the circuit structure, disposed on the substrate and covering the light emitting diode die An encapsulation layer and a support structure disposed on the substrate.

與習知技術相比,本發明利用在基板上形成支撐結構,以吸收基板張力或應力,同時增加基板結構的剛性,避免基板發生形變,從而減少基板不平整以及良率下降等問題。 Compared with the prior art, the present invention utilizes a support structure formed on a substrate to absorb substrate tension or stress, and at the same time increase rigidity of the substrate structure, thereby avoiding deformation of the substrate, thereby reducing problems such as unevenness of the substrate and a decrease in yield.

下面參照附圖,結合具體實施例對本發明作進一步的描述。 The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.

10‧‧‧基板 10‧‧‧Substrate

11‧‧‧第一表面 11‧‧‧ first surface

12‧‧‧第二表面 12‧‧‧ second surface

13‧‧‧孔洞 13‧‧‧ hole

20‧‧‧電路結構 20‧‧‧Circuit structure

21‧‧‧主要作業區 21‧‧‧Main operating area

22‧‧‧非主要作業區 22‧‧‧ Non-main operating area

30‧‧‧支撐結構 30‧‧‧Support structure

31‧‧‧主幹支撐 31‧‧‧Main support

32‧‧‧週邊支撐 32‧‧‧ Peripheral support

33‧‧‧延伸支撐 33‧‧‧ Extended support

40‧‧‧發光二極體晶粒 40‧‧‧Light-emitting diode grains

50‧‧‧封裝層 50‧‧‧Encapsulation layer

圖1為本發明一實施例的發光二極體封裝結構製造方法的流程圖。 1 is a flow chart of a method of fabricating a light emitting diode package structure according to an embodiment of the invention.

圖2為本發明一實施例的發光二極體封裝結構製造方法各步 驟所得的發光二極體封裝結構剖面示意圖。 2 is a step of manufacturing a light emitting diode package structure according to an embodiment of the invention A schematic cross-sectional view of a light-emitting diode package structure obtained by the step.

圖3為本發明一實施例的發光二極體封裝結構製造方法第二步驟所得的發光二極體封裝結構俯視圖。 3 is a top plan view of a light emitting diode package structure obtained by the second step of the method for fabricating a light emitting diode package structure according to an embodiment of the invention.

圖4為本發明一實施例的發光二極體封裝結構製造方法第三步驟所得的發光二極體封裝結構俯視圖。 4 is a top plan view of a light emitting diode package structure obtained by the third step of the method for fabricating a light emitting diode package structure according to an embodiment of the invention.

圖5為本發明另一實施例的發光二極體封裝結構製造方法第三步驟所得的發光二極體封裝結構俯視圖。 FIG. 5 is a top view of a light emitting diode package structure obtained by the third step of the method for fabricating a light emitting diode package structure according to another embodiment of the invention.

圖6為本發明一實施例的發光二極體封裝結構製造方法第四步驟所得的發光二極體封裝結構俯視圖。 FIG. 6 is a top view of a light emitting diode package structure obtained by the fourth step of the method for fabricating a light emitting diode package structure according to an embodiment of the invention.

圖1示出了本發明一實施例的發光二極體封裝結構製造方法的流程。該發光二極體封裝結構製造方法大致包括如下流程:第一步驟,提供一基板10,該基板10具有第一表面11和相對的第二表面12;第二步驟,設置電路結構20於基板10上;第三步驟,設置支撐結構30於基板10上;第四步驟,設置若干發光二極體晶粒40於基板10上,並與電路結構20形成電連接;第五步驟,設置封裝層50於基板10上並覆蓋發光二極體晶粒40。 FIG. 1 shows a flow of a method of fabricating a light emitting diode package structure according to an embodiment of the invention. The manufacturing method of the LED package structure generally includes the following steps: a first step, providing a substrate 10 having a first surface 11 and an opposite second surface 12; and a second step of disposing the circuit structure 20 on the substrate 10 The third step is to set the support structure 30 on the substrate 10; in the fourth step, a plurality of LED dies 40 are disposed on the substrate 10 and electrically connected to the circuit structure 20; and in the fifth step, the encapsulation layer 50 is disposed. The substrate 10 is covered on the substrate 10 and covers the light emitting diode die 40.

下面結合其他圖示對該流程作詳細說明。請同時參考圖2和圖3,首先,如步驟102所示,提供一基板10。該基板10呈平板狀,包括第一表面11和相對的第二表面12。該基板10上設有多個主要作業區21和非主要作業區22,其中,非主要作業區22將各個主要作業區21互相隔離。本實施例中每一主要作業區21的四周均設有非主要作業區22,在其他實施例中,非主要作業區22可以僅分佈在各主要作業區21之間。該基板10的材料可以是樹脂或塑膠。 The process will be described in detail below in conjunction with other diagrams. Referring to FIG. 2 and FIG. 3 simultaneously, first, as shown in step 102, a substrate 10 is provided. The substrate 10 has a flat shape and includes a first surface 11 and an opposite second surface 12. The substrate 10 is provided with a plurality of main work areas 21 and non-main work areas 22, wherein the non-main work areas 22 isolate the main work areas 21 from each other. In the present embodiment, each of the main working areas 21 is provided with a non-main working area 22, and in other embodiments, the non-main working areas 22 may be distributed only between the main working areas 21. The material of the substrate 10 may be resin or plastic.

然後如步驟104所示,設置電路結構20於基板10的第一表面11上,該電路結構20自第一表面11延伸至第二表面12,該電路結構20均分佈在主要作業區21內。該電路結構20的製作包括利用機械、蝕刻或鐳射加工的技術先在基板10上形成貫穿第一表面11及第二表面12的孔洞13,再利用電鍍、蒸鍍或化鍍的技術在孔洞13內形成電路結構20,電路結構20分別露出至第一表面11和第二表面12外。此外,本實施例還可包含利用鐳射加工、機械或研磨的技術在基板10的第一表面11上形成用於承載晶粒的固晶凹陷區域(圖未示)的工序。 Then, as shown in step 104, a circuit structure 20 is disposed on the first surface 11 of the substrate 10, the circuit structure 20 extending from the first surface 11 to the second surface 12, the circuit structures 20 being distributed throughout the main work area 21. The fabrication of the circuit structure 20 includes first forming a hole 13 through the first surface 11 and the second surface 12 on the substrate 10 by mechanical, etching or laser processing techniques, and then using holes, holes, or plating techniques in the holes 13 A circuit structure 20 is formed therein, and the circuit structure 20 is exposed to the outside of the first surface 11 and the second surface 12, respectively. In addition, the embodiment may further include a process of forming a solid crystal recessed region (not shown) for carrying the crystal grains on the first surface 11 of the substrate 10 by a technique of laser processing, mechanical or polishing.

接著如步驟106所示,設置支撐結構30於基板10上。並請參閱圖4,本實施例中的支撐結構30包括完全位於非主要作業區22內並位於主要作業區21之間的主幹支撐31,位於基板10週邊的週邊支撐32,以及自主要作業區21的電路結構20延伸至非主要作業區22的延伸支撐33。該延伸支撐33與部分主幹支撐31相互交錯,在本實施例中,該主幹支撐31與週邊支撐 32相互連接,在另一實施例中,該主幹支撐31與週邊支撐32彼此分離,並無接觸,如圖5所示。該支撐結構30可僅設置於第一表面11上,或第二表面12上,或同時設置於第一表面11和第二表面12上,在本實施例中,該支撐結構30設置於第一表面11上。該支撐結構30的材料可以是金屬,並利用蒸鍍、濺鍍或電鍍的技術製成。當然在其他實施例中,該支撐結構30也可以採用樹脂或塑膠材料,利用印刷或網印的技術製成。當支撐結構30採用金屬材料時,製作支撐結構30可與製作電路結構20同步完成,當支撐結構30採用樹脂或塑膠材料時,則需在設置電路結構20的步驟之後完成。在其他實施例中,該支撐結構30中的主幹支撐31、週邊支撐32和延伸支撐33可僅保留其中的任意一個或多個,例如,該支撐結構30可以僅包括設置在非主要作業區22內並位於主要作業區21之間的主幹支撐31,也可以同時包括主幹支撐31和由主要作業區21延伸至非主要作業區22內地延伸支撐33。 Next, as shown in step 106, a support structure 30 is disposed on the substrate 10. Referring to FIG. 4, the support structure 30 in this embodiment includes a main support 31 located completely within the non-main work area 22 and located between the main work areas 21, a peripheral support 32 located around the periphery of the substrate 10, and from the main work area. The circuit structure 20 of 21 extends to the extended support 33 of the non-primary work area 22. The extension support 33 and the partial trunk support 31 are interdigitated. In this embodiment, the main support 31 and the peripheral support 32 is interconnected. In another embodiment, the backbone support 31 and the peripheral support 32 are separated from one another without contact, as shown in FIG. The support structure 30 can be disposed only on the first surface 11, or on the second surface 12, or simultaneously on the first surface 11 and the second surface 12. In this embodiment, the support structure 30 is disposed on the first surface. On the surface 11. The material of the support structure 30 can be metal and made using techniques such as evaporation, sputtering or electroplating. Of course, in other embodiments, the support structure 30 can also be made of resin or plastic material using printing or screen printing techniques. When the support structure 30 is made of a metal material, the fabrication of the support structure 30 can be completed in synchronization with the fabrication of the circuit structure 20. When the support structure 30 is made of a resin or a plastic material, it is required to be completed after the step of disposing the circuit structure 20. In other embodiments, the trunk support 31, the perimeter support 32, and the extension support 33 in the support structure 30 may retain only one or more of them. For example, the support structure 30 may only include the non-main work area 22 The trunk support 31, which is located between the main work areas 21, may also include a main support 31 and an extended support 33 extending from the main work area 21 to the non-main work area 22.

由於支撐結構30可增加基板10的剛性並可吸收基板10的張力或應力,從而可避免基板10產生形變,同時減少因基板10變形而產生的良率下降的問題。 Since the support structure 30 can increase the rigidity of the substrate 10 and absorb the tension or stress of the substrate 10, deformation of the substrate 10 can be avoided, and the problem of a decrease in yield due to deformation of the substrate 10 can be reduced.

如步驟108所示,並請一同參閱圖6,設置若干發光二極體晶粒40於基板10上,該若干發光二極體晶粒40位於主要作業區21內,並與電路結構20電性連接。此電性連接的步驟可以採用覆晶、共晶或者固晶打線的方式完成。在本實施例中,是採用固晶打線方式將若干發光二極體晶粒40與電路結構20電 性連接。 As shown in step 108, and referring to FIG. 6, together, a plurality of LED dies 40 are disposed on the substrate 10. The plurality of LED dies 40 are located in the main working area 21 and electrically connected to the circuit structure 20. connection. The step of electrically connecting can be completed by flip chip, eutectic or solid crystal wiring. In this embodiment, a plurality of light-emitting diode dies 40 and the circuit structure 20 are electrically connected by a solid crystal wire bonding method. Sexual connection.

如步驟110所示,設置封裝層50於基板10上並覆蓋所有發光二極體晶粒40。該封裝層50可以採用矽樹脂、環氧樹脂或其他透明材料,利用模鑄工藝製成。在本實施例中,該封裝層50包含螢光轉換材料,接收發光二極體晶粒40的光線後可改變發出光的光特性。其中螢光轉換材料可以為石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉和氮化物基螢光粉。 As shown in step 110, an encapsulation layer 50 is disposed on the substrate 10 and covers all of the light emitting diode dies 40. The encapsulation layer 50 can be formed by a die casting process using a resin, epoxy resin or other transparent material. In the present embodiment, the encapsulation layer 50 includes a fluorescent conversion material that can change the light characteristics of the emitted light after receiving the light of the LED dipoles 40. The fluorescent conversion material may be garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based phosphor powder, thiogallate-based phosphor powder, and nitride. Base fluorescent powder.

可以理解的是,對於本領域的普通技術人員來說,可以根據本發明的技術構思做出其他各種相應的改變與變形,而所有這些改變與變形都應屬於本發明權利要求的保護範圍。 It is to be understood that those skilled in the art can make various other changes and modifications in accordance with the technical concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.

Claims (7)

一種發光二極體封裝結構的製造方法,包括以下步驟:第一步驟,提供一基板,該基板具有一第一表面和相對的第二表面;第二步驟,設置電路結構於基板上,且該電路結構從第一表面延伸至第二表面;第三步驟,設置支撐結構於基板上,所述支撐結構採用金屬材料,利用蒸鍍、濺鍍或電鍍工藝製成,並與設置電路結構同步完成;第四步驟,設置若干發光二極體晶粒於基板上,並與電路結構形成電連接;第五步驟,設置封裝層覆蓋發光二極體晶粒。 A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a substrate having a first surface and an opposite second surface; and a second step of disposing a circuit structure on the substrate, and The circuit structure extends from the first surface to the second surface; in the third step, the support structure is disposed on the substrate, the support structure is made of a metal material, is formed by evaporation, sputtering or electroplating, and is completed synchronously with the set circuit structure In the fourth step, a plurality of light-emitting diode chips are disposed on the substrate and electrically connected to the circuit structure; and in the fifth step, the package layer is disposed to cover the light-emitting diode grains. 如申請權利範圍第1項所述的發光二極體封裝結構的製造方法,其特徵在於:所述基板包括若干主要作業區和若干非主要作業區,且非主要作業區將各個主要作業區互相隔離,所述電路結構設置於基板的主要作業區內。 The method for manufacturing a light emitting diode package structure according to claim 1, wherein the substrate comprises a plurality of main working areas and a plurality of non-main working areas, and the non-main working areas are to In isolation, the circuit structure is disposed in a main working area of the substrate. 如申請權利範圍第2項所述的發光二極體封裝結構的製造方法,其特徵在於:所述支撐結構包括設置於非主要作業區內並位於主要作業區之間的主幹支撐。 A method of manufacturing a light emitting diode package structure according to claim 2, wherein the support structure comprises a trunk support disposed in the non-main operation area and located between the main operation areas. 如申請權利範圍第3項所述的發光二極體封裝結構的製造方法,其特徵在於:所述支撐結構還包括從主要作業區延伸至非主要作業區的延伸支撐,所述延伸支撐與主幹支撐互相交 錯設置。 The method for manufacturing a light emitting diode package structure according to claim 3, wherein the support structure further comprises an extended support extending from the main working area to the non-main working area, the extended support and the trunk Support each other Wrong setting. 如申請權利範圍第3項所述的發光二極體封裝結構的製造方法,其特徵在於:所述支撐結構還包括設置在基板週邊的週邊支撐。 A method of manufacturing a light emitting diode package structure according to claim 3, wherein the support structure further comprises a peripheral support disposed at a periphery of the substrate. 如申請權利範圍第5項所述的發光二極體封裝結構的製造方法,其特徵在於:所述主幹支撐和週邊支撐相互連接或彼此分離。 The method of manufacturing a light emitting diode package according to claim 5, wherein the trunk support and the peripheral support are connected to each other or separated from each other. 如申請權利範圍第1項所述的發光二極體封裝結構的製造方法,其特徵在於:所述支撐結構設置於第一表面或第二表面中的一面,或同時設置於第一表面和第二表面。 The method for manufacturing a light emitting diode package structure according to claim 1, wherein the support structure is disposed on one of the first surface or the second surface, or is disposed on the first surface and the first surface. Two surfaces.
TW99128472A 2010-08-25 2010-08-25 Light emitting diode pakage struture and the method thereof TWI409976B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200905907A (en) * 2007-07-19 2009-02-01 Advanced Optoelectronic Tech Package structure of compound semiconductor device and fabrication method thereof
TW201025671A (en) * 2008-12-29 2010-07-01 Everlight Electronics Co Ltd LED device and method of packaging the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200905907A (en) * 2007-07-19 2009-02-01 Advanced Optoelectronic Tech Package structure of compound semiconductor device and fabrication method thereof
TW201025671A (en) * 2008-12-29 2010-07-01 Everlight Electronics Co Ltd LED device and method of packaging the same

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