TWI428060B - Lighting devices and fabrication methods thereof - Google Patents

Lighting devices and fabrication methods thereof Download PDF

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TWI428060B
TWI428060B TW100100172A TW100100172A TWI428060B TW I428060 B TWI428060 B TW I428060B TW 100100172 A TW100100172 A TW 100100172A TW 100100172 A TW100100172 A TW 100100172A TW I428060 B TWI428060 B TW I428060B
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voltage
micro
diode
power source
light
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TW100100172A
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TW201130382A (en
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Wen Yung Yeh
Jui Ying Lin
Yu Chen Yu
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Epistar Corp
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照明裝置及其製作方法Lighting device and manufacturing method thereof

本發明有關於一種照明裝置,特別有關一種發光二極體照明裝置能夠不需要交流/直流轉換器而操作於直流電源之下以及交流電源之下。The invention relates to a lighting device, in particular to a lighting diode lighting device capable of operating under a direct current power source and under an alternating current power source without an alternating current/direct current converter.

由於具有耐用、壽命長、輕巧、低耗電並且不含有害物質(例如汞)的特性,因此使用發光二極體(LED)之照明技術已經變成照明產業與半導體產業未來非常重要的發展方向。一般而言,發光二極體係廣泛地應用於白光照明裝置、指示燈、車用信號燈、車用大燈、閃光燈、液晶顯示器之背光模組、投影機之光源、戶外顯示單元…等等。Due to its durability, long life, light weight, low power consumption and no harmful substances (such as mercury), the use of light-emitting diode (LED) lighting technology has become a very important development direction for the lighting industry and the semiconductor industry in the future. In general, the light-emitting diode system is widely used in white light illumination devices, indicator lights, vehicle signal lights, automotive headlights, flashlights, backlight modules for liquid crystal displays, light sources for projectors, outdoor display units, and the like.

目前的發光二極體發光源無法直接操作於交流電之下,故需使用交流/直流轉換器將交流電源轉換成直流電源供發光二極體發光源使用。然而,交流/直流轉換器會增加產品的成本、尺寸與重量並消耗更多的電能,不利於產品之可攜性。因此,需要一種發光二極體照明裝置能夠不需要交流/直流轉換器而操作於直流電源之下以及交流電源之下。The current LED light source cannot be directly operated under AC power, so an AC/DC converter is needed to convert the AC power into a DC power source for the LED source. However, the AC/DC converter increases the cost, size and weight of the product and consumes more power, which is detrimental to the portability of the product. Therefore, there is a need for a light-emitting diode illumination device that can operate under DC power and under AC power without the need for an AC/DC converter.

本發明係提供一種照明裝置,包括一第一電壓饋入點、一第二電壓饋入點、一第一微發光單元、一第二微發光單元以及一選擇單元。第一、第二微發光單元係分別包含二個反向並聯之二極體微晶粒。選擇單元係電性連接至第一微發光單元及第二微發光單元,並使第一微發光單元及第二微發光單元於一第一電壓下相並聯或於第二電壓下相串聯。其中第一微發光單元及第二微發光單元係電性連接於第一電壓饋入點及第二電壓饋入點之間,且第二電壓高於第一電壓。The invention provides a lighting device comprising a first voltage feeding point, a second voltage feeding point, a first micro light emitting unit, a second micro light emitting unit and a selecting unit. The first and second micro-light-emitting units respectively comprise two anti-parallel diode micro-grains. The selection unit is electrically connected to the first micro-light-emitting unit and the second micro-light-emitting unit, and the first micro-light-emitting unit and the second micro-light-emitting unit are connected in parallel at a first voltage or in series at a second voltage. The first micro-light-emitting unit and the second micro-light-emitting unit are electrically connected between the first voltage feeding point and the second voltage feeding point, and the second voltage is higher than the first voltage.

本發明亦提供另一種照明裝置,包括一基板、一第一電壓饋入點、一第二電壓饋入點、一第一微發光單元、一第二微發光單元以及一選擇單元。第一微發光單元及第二微發光單元係藉由半導體製程形成於基板之上,並電性連接於第一電壓饋入點及第二電壓饋入點之間。選擇單元係電性連接至第一微發光單元及第二微發光單元,並使第一微發光單元及第二微發光單元於一第一電壓下相並聯或於一第二電壓下相串聯,且第二電壓高於第一電壓。The present invention also provides another illumination device including a substrate, a first voltage feed point, a second voltage feed point, a first micro light emitting unit, a second micro light emitting unit, and a selection unit. The first micro-light-emitting unit and the second micro-light-emitting unit are formed on the substrate by a semiconductor process, and are electrically connected between the first voltage feeding point and the second voltage feeding point. The selection unit is electrically connected to the first micro-light-emitting unit and the second micro-light-emitting unit, and the first micro-light-emitting unit and the second micro-light-emitting unit are connected in parallel at a first voltage or in series at a second voltage. And the second voltage is higher than the first voltage.

本發明亦提供一種照明裝置之製作方法,包括藉由半導體製程形成一第一二極體微晶粒及一第二二極體微晶粒於一基板之上;提供一低電壓以使第一二極體微晶粒及第二二極體微晶粒相並聯;以及提供一高電壓以使第一二極體微晶粒及第二二極體微晶相串聯,其中高電壓大於低電壓。The invention also provides a method for fabricating a lighting device, comprising: forming a first diode microcrystal and a second diode microcrystal on a substrate by a semiconductor process; providing a low voltage to make the first The diode microcrystals and the second diode microcrystals are connected in parallel; and a high voltage is provided to connect the first diode microcrystals and the second diode microcrystals in series, wherein the high voltage is greater than the low voltage .

本發明亦提供另一種照明裝置之製作方法,包括藉由半導體製程形成一第一二極體微晶粒及一第二二極體微晶粒於一基板之上;形成一第一迴路於第一二極體微晶粒及第二二極體微晶粒之間;形成一第二迴路於第一二極體微晶粒及第二二極體微晶粒之間;以及提供一選擇單元,以根據一第一電壓或一第二電壓導通第一迴路或第二迴路,其中第一電壓不等於第二電壓。The present invention also provides a method for fabricating another illumination device, comprising: forming a first diode microcrystal and a second diode microcrystal on a substrate by a semiconductor process; forming a first loop Between a diode microcrystal and a second diode microcrystal; forming a second loop between the first diode microcrystal and the second dipole microcrystal; and providing a selection unit And conducting a first loop or a second loop according to a first voltage or a second voltage, wherein the first voltage is not equal to the second voltage.

為了讓本發明之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉一較佳實施例,並配合所附圖式,作詳細說明如下:The above and other objects, features and advantages of the present invention will become more apparent and understood.

第1圖所示係為本發明中一照明裝置之一實施例。如圖所示,照明裝置100包括一照明模組30以及一選擇單元50。照明模組30包括複數二極體微晶粒34形成於一基板20之上以及一導線結構(conductive wire pattern)19A用以連接二極體微晶粒34。基板20係為一絕緣基板、一絕緣材料或一個可用以將每一個二極體微晶粒34電性隔離之結構。Figure 1 is an embodiment of a lighting device of the present invention. As shown, the illumination device 100 includes a lighting module 30 and a selection unit 50. The illumination module 30 includes a plurality of diode micro-grains 34 formed on a substrate 20 and a conductive wire pattern 19A for connecting the diode micro-grains 34. The substrate 20 is an insulating substrate, an insulating material or a structure that can be used to electrically isolate each of the diode micro-grains 34.

導線結構19A包括複數導線(未標號)用以將二極體微晶粒34連接成一串微發光單元21、複數導線(即31a~31e)係用以將二極體微晶粒34連接至選擇單元50以及複數電壓饋入點(即32a~32e)用以藉由選擇單元50接收電源40所提供之電壓。舉例而言,導線結構19A係可由基板20上之複數導線及/或第7圖中所示之一底板(submount)上的複數導線所構成,但不限定於此。每個微發光單元21係包括至少兩個並聯連接之二極體微晶粒34,但不限定於此。於某些實施例中,每個微發光單元21係包括更多並聯、串聯或串並聯連接之二極體微晶粒34。或者是說,基板20上之二極體微晶粒34係可被連接成複數並聯或串並聯之微發光單元21。The wire structure 19A includes a plurality of wires (not labeled) for connecting the diode microcrystals 34 into a string of micro-light-emitting units 21, and a plurality of wires (ie, 31a-31e) for connecting the diode micro-crystals 34 to the selection. The unit 50 and the complex voltage feed points (ie, 32a-32e) are used to receive the voltage provided by the power source 40 by the selection unit 50. For example, the wire structure 19A may be composed of a plurality of wires on the substrate 20 and/or a plurality of wires on a submount shown in FIG. 7, but is not limited thereto. Each of the micro-light-emitting units 21 includes at least two diode micro-grains 34 connected in parallel, but is not limited thereto. In some embodiments, each of the micro-lighting units 21 includes more diode micro-grains 34 connected in parallel, in series, or in series-parallel. In other words, the diode micro-crystals 34 on the substrate 20 can be connected into a plurality of micro-light-emitting units 21 in parallel or in series and in parallel.

舉例而言,電源40係可為一直流電源或一交流電源。二極體微晶粒為可根據不同操作電壓調整其操作功率之發光元件。舉例而言,二極體微晶粒係可為發光二極體微晶粒(micro-light emitting diodes;micro LEDs)或雷射二極體微晶粒(micro-laser diodes;micro LDs),但不限定於此。如圖所示,電壓饋入點32a~32e皆藉由對應之導線31a~31e連接至選擇單元50。For example, the power source 40 can be a direct current power source or an alternating current power source. The diode microcrystals are light-emitting elements that can adjust their operating power according to different operating voltages. For example, the diode micro-grain can be micro-light emitting diodes (micro-LEDs) or micro-laser diodes (micro LDs), but It is not limited to this. As shown, the voltage feed points 32a-32e are connected to the selection unit 50 by corresponding wires 31a-31e.

選擇單元50係耦接於電源40與照明模組30之間,用以控制電源40藉由導線31a~31e中之兩者提供電流,以便供電至一個或多個微發光單元21。換言之,選擇單元50係由電壓饋入點32a~32e中選擇出至少兩者,並藉由所選擇到之電壓饋入點,將電源40所提供的電壓耦接至微發光單元21,使得該串微發光單元21之一部分與電源40形成至少一個迴路,以便導通迴路上之二極體微晶粒34。The selection unit 50 is coupled between the power source 40 and the illumination module 30 for controlling the power source 40 to supply current through the two of the wires 31a to 31e for supplying power to the one or more micro-light-emitting units 21. In other words, the selecting unit 50 selects at least two of the voltage feeding points 32a-32e, and couples the voltage provided by the power source 40 to the micro-lighting unit 21 by the selected voltage feeding point, so that the A portion of the string of micro-lighting units 21 forms at least one loop with the power source 40 to conduct the diode micro-grains 34 on the loop.

當電壓饋入點32a與32c被選擇單元50所選擇到時,電源40所提供之一較高的電壓(VDD)以及一較低的電壓(GND)係耦接至藉由導線31a與31c所連接成一串之N個二極體微晶粒34。因此,N個二極體微晶粒34與電源40會藉由導線31a與31c形成一個迴路,即導線31a與31c係分別耦接至電源40之第一、第二電極(未圖示)。若電源40為一交流電源,當第一、第二電極上的電壓分別為負(低準位)與正(高準位)時,例如在電源40之一正半週期中,下面那列N個二極體微晶粒34係被順向偏壓(導通)。相反地,當第一、第二電極上的電壓分別為正(高準位)與負(低準位)時,例如在電源40之一負半週期中,上面那列N個二極體微晶粒34係被順向偏壓(導通)。When the voltage feed points 32a and 32c are selected by the selection unit 50, a higher voltage (VDD) and a lower voltage (GND) provided by the power source 40 are coupled to the wires 31a and 31c. Connected into a string of N diode micro-grains 34. Therefore, the N diode micro-die 34 and the power source 40 form a loop by the wires 31a and 31c, that is, the wires 31a and 31c are respectively coupled to the first and second electrodes (not shown) of the power source 40. If the power source 40 is an AC power source, when the voltages on the first and second electrodes are negative (low level) and positive (high level), respectively, for example, in one positive half cycle of the power source 40, the lower column N The diode micro-grains 34 are biased (conducted) in the forward direction. Conversely, when the voltages on the first and second electrodes are positive (high level) and negative (low level), respectively, for example, in one negative half cycle of the power source 40, the upper column of N diodes The die 34 is biased (conducted) in the forward direction.

若電源40為直流電源,當第一、第二電極上的電壓分別為負(低準位)與正(高準位)時,下面那列N個二極體微晶粒34係被順向偏壓(導通)。相反地,當第一、第二電極上的電壓分別為正(高準位)與負(低準位)時,上面那列N個二極體微晶粒34係被順向偏壓(導通)。If the power source 40 is a DC power source, when the voltages on the first and second electrodes are negative (low level) and positive (high level), the following N diode micro-crystals 34 are forwarded. Bias (conducting). Conversely, when the voltages on the first and second electrodes are positive (high level) and negative (low level), respectively, the upper row of N diode micro-grains 34 are forward biased (conducted) ).

當電壓饋入點32a與32d被選擇單元50所選擇到時,電源40所提供之一較高的電壓(VDD)以及一較低的電壓(GND)係耦接至藉由導線31a與31d所連接成一串之N+1個二極體微晶粒34。因此,N+1個二極體微晶粒34與電源40會藉由導線31a與31d形成一個迴路,即導線31a與31d係分別耦接至電源40之第一、第二電極。若電源40為一交流電源時,當第一、第二電極上的電壓分別為負與正時,例如在電源40之一正半週期中,下面那列N+1個二極體微晶粒34係被順向偏壓。相反地,當第一、第二電極上的電壓分別為正與負時,例如在電源40之一負半週期中,上面那列N+1個二極體微晶粒34係被順向偏壓。When voltage feed points 32a and 32d are selected by selection unit 50, one of the higher voltages (VDD) and a lower voltage (GND) provided by power supply 40 is coupled to the wires 31a and 31d. Connected into a string of N+1 diode micro-grains 34. Therefore, the N+1 diode micro-chips 34 and the power source 40 form a loop by the wires 31a and 31d, that is, the wires 31a and 31d are respectively coupled to the first and second electrodes of the power source 40. If the power source 40 is an AC power source, when the voltages on the first and second electrodes are negative and positive, respectively, for example, in one positive half cycle of the power source 40, the following column of N+1 diode microcrystals The 34 series is biased in the forward direction. Conversely, when the voltages on the first and second electrodes are positive and negative, respectively, for example, in one negative half cycle of the power source 40, the upper row of N+1 diode micro-grains 34 are forward-biased. Pressure.

當電壓饋入點32a與32e被選擇單元50所選擇到時,電源40所提供之電壓係耦接至藉由導線31a與31e所連接成一串之N+2個二極體微晶粒34,使得N+2個二極體微晶粒34與電源40會藉由導線31a與31e形成一個迴路。When the voltage feeding points 32a and 32e are selected by the selecting unit 50, the voltage supplied from the power source 40 is coupled to the N+2 diode micro-grains 34 connected by the wires 31a and 31e. The N+2 diode micro-die 34 and the power source 40 are formed in a loop by the wires 31a and 31e.

舉例而言,N個二極體微晶粒34串聯連接之等效耐受電壓係可為Vn,N+1個二極體微晶粒34串聯連接之等效耐受電壓係可為Vn+1,N+2個二極體微晶粒34串聯接之等效耐受電壓係可為Vn+2,依此類推。若電源40之電壓大小低於N+1個二極體微晶粒34相連接之等效耐受電壓Vn+1時,選擇單元50會選擇電壓饋入點32a與32c,使得電源40所提供的電壓耦接至藉由導線31a與31c所連接成一串之N個二極體微晶粒34。或者是說,當電源40之電壓大小高於N+1個二極體微晶粒34串聯連接之等效耐受電壓Vn+1時,選擇單元50會選擇電壓饋入點32a與32e,使得電源40所提供的電壓耦接至藉由導線31a與31e所連接成一串之N+2個二極體微晶粒34。換言之,選擇單元50係根據電源40與連接成串之二極體微晶粒34的等效耐受電壓間之關係,選擇電壓饋入點以便改變電源40所偏壓供電之二極體微晶粒的數目,藉以解決由於半導體製程在等效耐受電壓所造成之變動。For example, the equivalent withstand voltage of the N diode micro-die 34 connected in series may be Vn, and the equivalent withstand voltage of the N+1 diode micro-chips 34 connected in series may be Vn+ The equivalent withstand voltage of 1, N + 2 diode micro-grains 34 connected in series may be Vn + 2, and so on. If the voltage of the power source 40 is lower than the equivalent withstand voltage Vn+1 of the N+1 diode micro-chips 34, the selection unit 50 selects the voltage feeding points 32a and 32c so that the power source 40 provides The voltage is coupled to a series of N diode micro-grains 34 connected by wires 31a and 31c. Or, when the voltage of the power source 40 is higher than the equivalent withstand voltage Vn+1 of the series connection of the N+1 diode micro-chips 34, the selection unit 50 selects the voltage feeding points 32a and 32e, so that The voltage provided by the power source 40 is coupled to a series of N+2 diode micro-dies 34 connected by wires 31a and 31e. In other words, the selection unit 50 selects a voltage feed point to change the diode microcrystals biased by the power source 40 according to the relationship between the power source 40 and the equivalent withstand voltage of the diode microchips 34 connected in series. The number of particles is used to solve the variation caused by the equivalent withstand voltage of the semiconductor process.

第2圖係為照明裝置之另一實施例。如圖所示,照明裝置200係與第1圖中所示之照明裝置100相似,其差別在於照明模組30係區分成兩個次照明模組39a與39b,並且選擇單元50係根據電源40之電壓大小由電壓饋入點37a~37c中選擇出至少兩者,使得電源40係藉由選出之電壓饋入點所連接的導線提供電壓至二極體微晶粒34。Figure 2 is another embodiment of a lighting device. As shown, the illumination device 200 is similar to the illumination device 100 shown in FIG. 1 with the difference that the illumination module 30 is divided into two sub-lighting modules 39a and 39b, and the selection unit 50 is based on the power source 40. The magnitude of the voltage is selected from at least two of the voltage feed points 37a-37c such that the power supply 40 provides a voltage to the diode micro-dies 34 by the wires connected by the selected voltage feed-in points.

舉例而言,照明模組30包括N個微發光單元21,而次照明模組39a與39b各包括N/2個微發光單元21,每個微發光單元21係包括兩個反向並聯連接之二極體微晶粒,但不限定於此。於其它實施例中,次照明模組39a與39b亦可包括不同數目之微發光單元21。For example, the illumination module 30 includes N micro-light-emitting units 21, and the sub-lighting modules 39a and 39b each include N/2 micro-light-emitting units 21, and each of the micro-light-emitting units 21 includes two anti-parallel connections. The diode is microcrystalline, but is not limited thereto. In other embodiments, the secondary lighting modules 39a and 39b may also include different numbers of micro-lighting units 21.

當電源40為交流220V時,選擇單元50則會選擇電壓饋入點37a與37c,使得電源40藉由電壓饋入點37a與37c以及導線38a與38c來提供電壓。換言之,導線38a與38c係分別耦接至電源40之第一、第二電極(未圖示),並且藉由導線38a與38c整個照明模組30與電源40係形成一個迴路。因此,當第一、第二電極上之電壓分別為負與正時,例如電源40之正半週期時,下面那串二極體微晶粒34會被順向偏壓(導通)。反言之,當第一、第二電極上之電壓分別為正與負時,例如電源40之負半週期時,上面那串二極體微晶粒34會被順向偏壓(導通)。When the power source 40 is AC 220V, the selection unit 50 selects the voltage feed points 37a and 37c so that the power source 40 supplies voltage by the voltage feed points 37a and 37c and the wires 38a and 38c. In other words, the wires 38a and 38c are respectively coupled to the first and second electrodes (not shown) of the power source 40, and the entire lighting module 30 and the power source 40 form a loop by the wires 38a and 38c. Therefore, when the voltages on the first and second electrodes are negative and positive, respectively, for example, during the positive half cycle of the power source 40, the lower series of diode micro-grains 34 are forward biased (conducted). Conversely, when the voltages on the first and second electrodes are positive and negative, respectively, such as the negative half cycle of the power source 40, the upper series of diode micro-dies 34 are forward biased (conducted).

此外,照明裝置200亦可由一直流220V電源所供電。舉例而言,若電源40為一直流電源,當第一、第二電極上的電壓分別為負與正時,下面那串N個二極體微晶粒34則會被順向偏壓(即導通)。反之言,當第一、第二電極上的電壓分別為正與負時,上面那串N個二極體微晶粒34則會被順向偏壓(即導通)。In addition, the illumination device 200 can also be powered by a 220V power supply. For example, if the power source 40 is a DC power source, when the voltages on the first and second electrodes are negative and positive, respectively, the lower series of N diode micro-chips 34 are forward biased (ie, Turn on). Conversely, when the voltages on the first and second electrodes are positive and negative, respectively, the upper series of N diode micro-grains 34 are forward biased (ie, turned on).

當電源40為交流110V時,選擇單元50則會選擇三個電壓饋入點37a~37c,使得電源40藉由導線38a~38c來提供電壓,並且次照明模組39a與39b與電源40係藉由導線38a~38c形成二個迴路。舉例而言,次照明模組39a與電源40係藉由導線38a~38b形成一第一迴路,而次照明模組39b與電源40係藉由導線38b~38c形成一第二迴路。換言之,導線38a與38c係耦接至電源40之一第一電極,而導線38b係耦接至電源40之一第二電極。因此,當第一、第二電極上的電壓分別為正與負時,即電源40之負半週期時,於次照明模組39a中位於上面的那串N/2個二極體微晶粒34和於次照明模組39b中位於下面的那串N/2個二極體微晶粒34會被順向偏壓(導通)。反言之,當第一、第二電極上的電壓分別為負與正時,即電源40之正半週期時,於次照明模組39a中位於下面的那串N/2個二極體微晶粒34和於次照明模組39b中位於上面的那串N/2個二極體微晶粒34會被順向偏壓(導通)。When the power source 40 is AC 110V, the selection unit 50 selects three voltage feeding points 37a-37c, so that the power source 40 supplies voltage through the wires 38a-38c, and the secondary lighting modules 39a and 39b and the power source 40 borrow Two loops are formed by the wires 38a to 38c. For example, the secondary lighting module 39a and the power source 40 form a first loop by the wires 38a-38b, and the secondary lighting module 39b and the power source 40 form a second loop by the wires 38b-38c. In other words, the wires 38a and 38c are coupled to one of the first electrodes of the power source 40, and the wires 38b are coupled to one of the second electrodes of the power source 40. Therefore, when the voltages on the first and second electrodes are positive and negative, respectively, that is, the negative half cycle of the power source 40, the series of N/2 diode microcrystals located above the sub-lighting module 39a 34 and the string of N/2 diode micro-grains 34 located below in the sub-lighting module 39b are forward biased (conducted). Conversely, when the voltages on the first and second electrodes are negative and positive, respectively, that is, the positive half cycle of the power source 40, the string of N/2 diodes located below the sub-lighting module 39a The die 34 and the string of N/2 diode micro-dies 34 located above the secondary illumination module 39b are forward biased (conducted).

有鑑於此,照明裝置200係可根據電源40之電壓大小,選擇出一適當的迴路,使得它可以操作於交流220V、交流110V、直流220V與直流110V之下。In view of this, the lighting device 200 can select an appropriate circuit according to the voltage of the power source 40, so that it can operate under AC 220V, AC 110V, DC 220V and DC 110V.

第3圖係為選擇單元之一實施例。如圖所示,選擇單元50係包括一鑑別單元53以及一輸出單元54。鑑別單元53係耦接至電源40用以判斷電源40之電壓大小,並藉以產生一結果信號SM。輸出單元54係耦接至電源40與鑑別單元53,用以根據結果信號SM,選擇性地將電源耦接至少兩個電壓饋入點。Figure 3 is an embodiment of a selection unit. As shown, the selection unit 50 includes an authentication unit 53 and an output unit 54. The identification unit 53 is coupled to the power source 40 for determining the voltage level of the power source 40 and generating a result signal SM. The output unit 54 is coupled to the power source 40 and the authentication unit 53 for selectively coupling the power source to the at least two voltage feed points according to the result signal SM.

舉例而言,當電源40為AC/DC220V時,鑑別單元53係產生結果信號SM至輸出單元54,使得輸出單元54根據導線38a與38c,將來自電源40之電壓輸出至電壓饋入點37a與37c。換言之,導線38a與38c係分別耦接至電源40之第一、第二電極,並且整個照明模組30與電源40係藉由導線38a與38c形成一個迴路。For example, when the power source 40 is AC/DC 220V, the authentication unit 53 generates a result signal SM to the output unit 54, so that the output unit 54 outputs the voltage from the power source 40 to the voltage feed point 37a according to the wires 38a and 38c. 37c. In other words, the wires 38a and 38c are respectively coupled to the first and second electrodes of the power source 40, and the entire lighting module 30 and the power source 40 form a loop by the wires 38a and 38c.

當電源40為AC/DC110V時,鑑別單元53係產生結果信號SM至輸出單元54,使得輸出單元54根據導線38a~38c,將來自電源40之電壓輸出至電壓饋入點37a~37c。換言之,導線38a與38c係耦接至電源40之第一電極,而導線38b係耦接至電源40之第二電極。因此,次照明模組39a與電源40係藉由導線38a與38b形成一第一迴路,而次照明模組39b與電源40係藉由導線38b與38c形成一第二迴路。When the power source 40 is AC/DC 110V, the authentication unit 53 generates a result signal SM to the output unit 54, so that the output unit 54 outputs the voltage from the power source 40 to the voltage feed points 37a to 37c according to the wires 38a to 38c. In other words, the wires 38a and 38c are coupled to the first electrode of the power source 40, and the wire 38b is coupled to the second electrode of the power source 40. Therefore, the secondary lighting module 39a and the power source 40 form a first loop by the wires 38a and 38b, and the secondary lighting module 39b and the power source 40 form a second loop by the wires 38b and 38c.

第4圖係為照明裝置之另一實施例。如圖所示,照明裝置300係與第1圖中所示之照明裝置相似,其差別在於照明模組30包括三個次照明模組39c~39e,各包括一串微發光單元21,並且選擇單元50係根據一功率設定信號SP,於電壓饋入點33a~33d中選擇出至少二者,使得電源40藉由選出之電壓饋入點所連接之導線提供電壓至二極體微晶粒34。如圖所示,每個微發光單元21包括至少兩個反向並聯連接之二極體微晶粒34,但不限定於此。於某些實施例中,每個微發光單元21亦包超過三個串聯、並聯或串並聯連接之二極體微晶粒34。亦或是說,基板20上之二極體微晶粒34係可被連接成複數串聯、並聯或串並聯連接之微發光單元21。Figure 4 is another embodiment of a lighting device. As shown, the illumination device 300 is similar to the illumination device shown in FIG. 1 except that the illumination module 30 includes three sub-lighting modules 39c-39e, each including a string of micro-lighting units 21, and is selected. The unit 50 selects at least two of the voltage feeding points 33a to 33d according to a power setting signal SP, so that the power source 40 supplies a voltage to the diode microcrystals 34 through the wires connected to the selected voltage feeding points. . As shown, each of the micro-light-emitting units 21 includes at least two diode micro-grains 34 connected in anti-parallel, but is not limited thereto. In some embodiments, each of the micro-lighting units 21 also includes more than three diode micro-grains 34 connected in series, in parallel, or in series-parallel. In other words, the diode micro-crystals 34 on the substrate 20 can be connected into a plurality of micro-light-emitting units 21 connected in series, in parallel or in series-parallel.

當功率設定信號SP代表一第一狀態時,選擇單元50會選擇電壓饋入點33d與33a,並將導線36d與36a分別耦接至電源40之第一、第二電極。因此,電源40與次照明模組39c中那串微發光單元21會形成一迴路。當第一、第二電極上的電壓分別為負與正時,次照明模組39c中位於上方那串二極體微晶粒34會順向偏壓(導通)。反言之,當第一、第二電極上的電壓分別為正與負時,次照明模組39c中位於下方那串二極體微晶粒34會順向偏壓(導通)。When the power setting signal SP represents a first state, the selecting unit 50 selects the voltage feeding points 33d and 33a, and couples the wires 36d and 36a to the first and second electrodes of the power source 40, respectively. Therefore, the power source 40 and the string of micro-lighting units 21 in the sub-lighting module 39c form a loop. When the voltages on the first and second electrodes are negative and positive, respectively, the diodes 34 in the upper sub-module 39c are biased (conducted) in the forward direction. Conversely, when the voltages on the first and second electrodes are positive and negative, respectively, the lower series of micro-die 34 in the sub-lighting module 39c is biased (conducted) in the forward direction.

當功率設定信號SP代表一第二狀態時,選擇單元50會選擇電壓饋入點33d、33a與33b,並將導線36d耦接至電源40之第一電極,而導線36a與36b係耦接至電源40之第二電源。因此,電源40與次照明模組39c中那串微發光單元21會形成第一迴路,電源40與次照明模組39d中那串微發光單元21會形成第二迴路。當第一、第二電極上的電壓分別為負與正時,次照明模組39c與39d中位於上方那串二極體微晶粒34皆會順向偏壓(導通)。反言之,當第一、第二電極上的電壓分別為正與負時,次照明模組39c與39d中位於下方那串二極體微晶粒34皆會順向偏壓(導通)。When the power setting signal SP represents a second state, the selecting unit 50 selects the voltage feeding points 33d, 33a and 33b, and couples the wire 36d to the first electrode of the power source 40, and the wires 36a and 36b are coupled to The second power source of the power source 40. Therefore, the power supply 40 and the string of micro-lighting units 21 in the sub-lighting module 39c form a first loop, and the power source 40 and the string of micro-lighting units 21 in the sub-lighting module 39d form a second loop. When the voltages on the first and second electrodes are negative and positive, respectively, the string of diodes 34 located above the secondary illumination modules 39c and 39d are forward biased (conducted). Conversely, when the voltages on the first and second electrodes are positive and negative, respectively, the lower series of diodes 34 in the sub-lighting modules 39c and 39d are forward biased (conducted).

當功率設定信號SP代表一第三狀態時,選擇單元50會選擇電壓饋入點33a~33d,並將導線36d耦接至電源40之第一電極,而導線36a~36c係耦接至電源40之第二電源。因此,電源40與次照明模組39c中那串微發光單元21會形成第一迴路,電源40與次照明模組39d中那串微發光單元21會形成第二迴路,電源40與次照明模組39e中那串微發光單元21會形成第三迴路。當第一、第二電極上的電壓分別為負與正時,次照明模組39c~39e中位於上方那串二極體微晶粒34皆會順向偏壓(導通)。反言之,當第一、第二電極上的電壓分別為正與負時,次照明模組39c~39e中位於下方那串二極體微晶粒34皆會順向偏壓(導通)。When the power setting signal SP represents a third state, the selecting unit 50 selects the voltage feeding points 33a to 33d, and couples the wire 36d to the first electrode of the power source 40, and the wires 36a to 36c are coupled to the power source 40. The second power source. Therefore, the power supply 40 and the string of micro-lighting units 21 in the sub-lighting module 39c form a first loop, and the string of micro-lighting units 21 in the power source 40 and the sub-lighting module 39d form a second loop, the power source 40 and the sub-lighting mode. The string of micro-lighting units 21 in group 39e will form a third loop. When the voltages on the first and second electrodes are negative and positive, respectively, the plurality of diode micro-grains 34 located above the secondary illumination modules 39c-39e are forward biased (conducted). Conversely, when the voltages on the first and second electrodes are positive and negative, respectively, the lower-order diode micro-grains 34 in the sub-lighting modules 39c-39e are forward biased (conducted).

由此可知,照明裝置300係可根據一功率設定信號SP,選擇性地偏壓一串或多串微發光單元21,以便調整其發光功率。It can be seen that the illumination device 300 can selectively bias one or more strings of the micro-light-emitting units 21 according to a power setting signal SP to adjust the luminous power thereof.

第5圖係為照明裝置之另一實施例。如圖所示,照明裝置400係包括一照明模組30、一電源40、以及一選擇單元50。電源40係可為一直流電源或一交流電源。照明模組30係包括形成於一基板20上之複數二極體微晶粒34_1~34_8,以及一導線結構19B用以連接二極體微晶粒34_1~34_8。基板20係為一絕緣基板、一絕緣材料或一個可用以將每一個二極體微晶粒34_1~34_8電性隔離之結構。Figure 5 is another embodiment of a lighting device. As shown, the lighting device 400 includes a lighting module 30, a power source 40, and a selection unit 50. The power source 40 can be a direct current power source or an alternating current power source. The illumination module 30 includes a plurality of diode microcrystals 34_1~34_8 formed on a substrate 20, and a conductor structure 19B for connecting the diode microcrystals 34_1~34_8. The substrate 20 is an insulating substrate, an insulating material or a structure that can be used to electrically isolate each of the diode micro-grains 34_1~34_8.

導線結構19B係包括複數導線45用以將二極體微晶粒34_1~34_8連接成兩串(列)並耦接至選擇單元50,以及複數電壓饋入點46a~46j用以藉由選擇單元50接收電源40所提供之電壓。舉例而言,導線結構19B係由基板20上複數導線及/或一底板22上之複數導線所構成,但不限定於此。於某些實施例中,二極體微晶粒34_1~34_8係為發光二極體微晶粒,或雷射二極體微晶粒,但不限定於此。The wire structure 19B includes a plurality of wires 45 for connecting the diode microcrystals 34_1~34_8 into two strings (columns) and coupled to the selection unit 50, and the plurality of voltage feeding points 46a to 46j for selecting cells by 50 receives the voltage provided by the power source 40. For example, the wire structure 19B is composed of a plurality of wires on the substrate 20 and/or a plurality of wires on a substrate 22, but is not limited thereto. In some embodiments, the diode microcrystals 34_1~34_8 are light emitting diode microcrystals or laser diode microcrystals, but are not limited thereto.

選擇單元50係藉由判斷電源40為直流電源或交流電源,選擇性地將電源40所提供之電壓,供應至電壓饋入點46a~46j。選擇單元50包括一鑑別單元53”、複數阻絕單元44、一電感L0、一電容C0以及交流、直流電極AC1、AC2、DC1與DC2。如圖所示,藉由導線45電壓饋入點46a、46c、46e、46g與46i係耦接至直流電極DC1,電壓饋入點46b、46d、46f、46h與46j係耦接至直流電極DC2,電壓饋入點46e與46j係耦接至交流電極AC1,而電壓饋入點46a與46f係耦接至交流電極AC2。The selecting unit 50 selectively supplies the voltage supplied from the power source 40 to the voltage feeding points 46a to 46j by judging that the power source 40 is a DC power source or an AC power source. The selecting unit 50 includes a discriminating unit 53", a plurality of blocking units 44, an inductor L0, a capacitor C0, and alternating current and direct current electrodes AC1, AC2, DC1 and DC2. As shown, the voltage is fed to the point 46a by the wire 45, 46c, 46e, 46g, and 46i are coupled to the DC electrode DC1, the voltage feeding points 46b, 46d, 46f, 46h, and 46j are coupled to the DC electrode DC2, and the voltage feeding points 46e and 46j are coupled to the AC electrode AC1. The voltage feed points 46a and 46f are coupled to the AC electrode AC2.

鑑別單元53”係用以判斷電源40為直流電源或交流電源,並產生一判斷結果SC用以控制阻絕單元44。電感L0係耦接於電源40與直流電極DC1之間用以隔絕交流信號,而電容C0係耦接於電源40與交流電極AC1之間,用以隔絕直流信號。阻絕單元44係耦接於導線結構19B與交流、直流電極AC1、AC2、DC1與DC2之間,用以電性隔離交流、直流電極AC1、AC2、DC1與DC2與導線結構19B之電壓饋入點46a~46j。The identification unit 53 is configured to determine that the power source 40 is a DC power source or an AC power source, and generates a determination result SC for controlling the blocking unit 44. The inductor L0 is coupled between the power source 40 and the DC electrode DC1 to isolate the AC signal. The capacitor C0 is coupled between the power source 40 and the AC electrode AC1 for isolating the DC signal. The blocking unit 44 is coupled between the wire structure 19B and the AC and DC electrodes AC1, AC2, DC1 and DC2 for powering The isolated AC, DC electrodes AC1, AC2, DC1 and DC2 and the voltage feed points 46a to 46j of the conductor structure 19B.

舉例而言,當電源40為直流電源時,所得出之判斷結果SC會控制阻絕單元44,將交流電極AC1與AC2與電壓饋入點46a、46e、46f與46j電性隔離,同時將電壓饋入點46b~46e與46g~46j分別耦接至直流電極DC1與DC2。電源40之一較高的電壓(例如VDD)係藉由電感L0與直流電極DC1耦接至電壓饋入點46g、46c、46i與46e,並且電源40之一較低的電壓(例如GND)係藉由直流電極DC2耦接至電壓饋入點46b、46h、46d與46j。因此,二極體微晶粒34_2、34_4、34_6與34_8會被電源40個別地順向偏壓(導通)。換言之,電源40與二極體微晶粒34_2、34_4、34_6與34_8會藉由直流電極DC1與DC2以及導線結構19B(即照明模組30上之導線)形成四個迴路。For example, when the power source 40 is a DC power source, the obtained judgment result SC controls the blocking unit 44 to electrically isolate the AC electrodes AC1 and AC2 from the voltage feeding points 46a, 46e, 46f and 46j, and simultaneously feeds the voltage. The in points 46b~46e and 46g~46j are respectively coupled to the DC electrodes DC1 and DC2. A higher voltage (eg, VDD) of the power supply 40 is coupled to the voltage feed points 46g, 46c, 46i, and 46e by the inductor L0 and the DC electrode DC1, and a lower voltage (eg, GND) of the power supply 40 is The DC electrode DC2 is coupled to the voltage feed points 46b, 46h, 46d and 46j. Therefore, the diode micro-crystals 34_2, 34_4, 34_6, and 34_8 are individually biased (conducted) by the power source 40. In other words, the power source 40 and the diode micro-dies 34_2, 34_4, 34_6, and 34_8 form four loops by the DC electrodes DC1 and DC2 and the wire structure 19B (i.e., the wires on the illumination module 30).

反言之,當電源40為交流電源時,所得出之判斷結果SC會控制阻絕單元44,將直流電極DC1與DC2與電壓饋入點46a~46j電性隔離,同時將電壓饋入點46e與46j耦接至交流電極AC1,以及將電壓饋入點46a與46f耦接至交流電極AC2。在電源40之正半週期時,電源40係藉由電容C0以及交流電極AC1與AC2將二極體微晶粒34_1~34_4順向偏壓(導通),並將二極體微晶粒34_5~34_8反向偏壓(截止)。在電源40之負半週期時,電源40係藉由電容C0以及交流電極AC1與AC2將二極體微晶粒34_1~34_4反向偏壓(截止),並將二極體微晶粒34_5~34_8順向偏壓(導通)。因此,這兩串二極體微晶粒34_1~34_4與34_5~34_8會被電源40交替地順向偏壓。換言之,電源40與二極體微晶粒34_1~34_8係藉由交流電極AC1與AC2以及導線結構19B(即照明模組30上之導線)形成兩個迴路。Conversely, when the power source 40 is an AC power source, the obtained judgment result SC controls the blocking unit 44 to electrically isolate the DC electrodes DC1 and DC2 from the voltage feeding points 46a to 46j while feeding the voltage to the point 46e and 46j is coupled to the AC electrode AC1 and couples the voltage feed points 46a and 46f to the AC electrode AC2. During the positive half cycle of the power supply 40, the power supply 40 biases the diode micro-crystals 34_1~34_4 forwardly (conducting) by the capacitor C0 and the AC electrodes AC1 and AC2, and the diode micro-crystal 34_5~ 34_8 reverse bias (cutoff). During the negative half cycle of the power supply 40, the power supply 40 reverse biases (turns off) the diode micro-dies 34_1~34_4 by the capacitor C0 and the AC electrodes AC1 and AC2, and the diode micro-crystal 34_5~ 34_8 forward bias (conduction). Therefore, the two series of diode micro-crystals 34_1~34_4 and 34_5~34_8 are alternately biased forward by the power source 40. In other words, the power source 40 and the diode microcrystals 34_1~34_8 form two loops through the AC electrodes AC1 and AC2 and the conductor structure 19B (ie, the wires on the illumination module 30).

在動作上,照明裝置400係判斷電源40為直流電源或交流電源,並根據判斷結果將電源40耦接至對應之直流電極DC1與DC2或交流電極AC1與AC2,以便選擇不同電壓饋入點供不同型態之電源使用。因此,照明裝置400係可在不需要交流-直流電源轉換之下,由直流電源或交流電源所供電。In operation, the lighting device 400 determines that the power source 40 is a DC power source or an AC power source, and according to the determination result, the power source 40 is coupled to the corresponding DC electrodes DC1 and DC2 or the AC electrodes AC1 and AC2 to select different voltage feeding points. Different types of power supplies are used. Therefore, the lighting device 400 can be powered by a DC power source or an AC power source without requiring AC-DC power conversion.

第6圖係為照明裝置之一實施例。如圖所示,照明裝置500係與第5圖中所示之照明裝置400相似,其差別在於將阻絕單元44省略,並且交流電極AC1與AC2以及直流電極DC1與DC2並非固定式而是可移動式的。Figure 6 is an embodiment of a lighting device. As shown, the illumination device 500 is similar to the illumination device 400 shown in FIG. 5, with the difference that the blocking unit 44 is omitted, and the AC electrodes AC1 and AC2 and the DC electrodes DC1 and DC2 are not fixed but movable. Style.

照明裝置500係可根據下列步驟來形成。首先,如第7圖中所示,藉由一般半導體製程,於一基板20上形成複數二極體微晶粒34_1~34_8,其中二極體微晶粒34_1~34_8係藉由基板20上之導線連接成兩串。舉例而言,二極體微晶粒34_1~34_4係連接成第一串,而二極體微晶粒34_5~34_8係連接成第二串。接著,如第8圖中所示,提供一底板22其上具有複數導線45,具有二極體微晶粒34_1~34_8之基板20係設置於底板22之上方。如第9圖中所示,底板22上之導線45與二極體微晶粒34_1~34_8係藉由一覆晶接合技術(flip-chip bonding)而電性連接。最後,直流、交流電極DC1、DC2、AC1與AC2係可移動地設置於底板22之上方,以完成第6圖所示之照明裝置500。The illumination device 500 can be formed according to the following steps. First, as shown in FIG. 7, a plurality of diode microcrystals 34_1~34_8 are formed on a substrate 20 by a general semiconductor process, wherein the diode microcrystals 34_1~34_8 are on the substrate 20. The wires are connected in two strings. For example, the diode microcrystals 34_1~34_4 are connected in a first string, and the diode microcrystals 34_5~34_8 are connected in a second string. Next, as shown in FIG. 8, a bottom plate 22 is provided with a plurality of wires 45 thereon, and the substrate 20 having the diode microcrystals 34_1 34 34_8 is disposed above the bottom plate 22. As shown in FIG. 9, the wires 45 on the bottom plate 22 and the diode microcrystals 34_1 to 34_8 are electrically connected by a flip-chip bonding technique. Finally, the DC and AC electrodes DC1, DC2, AC1 and AC2 are movably disposed above the bottom plate 22 to complete the illumination device 500 shown in FIG.

如第10圖所示,作為一直流電源之正電極與負電極之直流電極DC1與DC2係移動至設置於底板22上,以便電性連接至導線45,使得直流電源之一較高電壓(例如VDD)係被供應至電壓饋入點46g、46c、46i與46e,而直流電源之一較低電壓(例如GND)係被供應至電壓饋入點46b、46h、46d與46j。因此,直流電源與二極體微晶粒34_2、34_4、34_6與34_8係形成四個迴路,即每個二極體微晶粒34_2、34_4、34_6與34_8皆被直流電源個別地偏壓。As shown in FIG. 10, the DC electrodes DC1 and DC2, which are the positive and negative electrodes of the DC power source, are moved to be disposed on the bottom plate 22 to be electrically connected to the wires 45 such that one of the DC power sources has a higher voltage (for example, VDD) is supplied to voltage feed points 46g, 46c, 46i and 46e, and a lower voltage (e.g., GND) of the DC power source is supplied to voltage feed points 46b, 46h, 46d and 46j. Therefore, the DC power source and the diode micro-dies 34_2, 34_4, 34_6 and 34_8 form four loops, that is, each of the diode micro-dies 34_2, 34_4, 34_6 and 34_8 are individually biased by the DC power source.

或者是說,如第11圖中所示,作為一直流電源之負電極與正電極之直流電極DC1與DC2係移動至設置於底板22上,以便電性連接至導線45,使得直流電源之一較高電壓(例如VDD)係被供應至電壓饋入點46f、46b、46h與46d,而直流電源之一較低電壓(例如GND)係被供應至電壓饋入點46a、46g、46c與46i。因此,直流電源與二極體微晶粒34_1、34_3、34_5與34_7係形成四個迴路,即每個二極體微晶粒34_1、34_3、34_5與34_7皆被直流電源個別地偏壓。Or, as shown in FIG. 11, the DC electrodes DC1 and DC2, which are the negative electrode and the positive electrode of the DC power source, are moved to be disposed on the bottom plate 22 to be electrically connected to the wires 45, so that one of the DC power sources is A higher voltage (e.g., VDD) is supplied to voltage feed points 46f, 46b, 46h, and 46d, and a lower voltage (e.g., GND) of the DC power supply is supplied to voltage feed points 46a, 46g, 46c, and 46i. . Therefore, the DC power source and the diode micro-dies 34_1, 34_3, 34_5 and 34_7 form four loops, that is, each of the diode micro-dies 34_1, 34_3, 34_5 and 34_7 are individually biased by a DC power source.

如第12圖中所示,交流電極AC1與AC2係移動至設置於底板22上,以便電性連接至導線45,故交流電源係與電壓饋入點46a與46e之間的那串二極體微晶粒34_1~34_4形成第一回路,並與電壓饋入點46f與46j之間的那串二極體微晶粒34_5~34_8形成第二回路。於交流電源之一正半週期中,第一迴路中之二極體34_1~34_4會被順向偏壓(導通),而在交流電源之一負半週期中,第二迴路中之二極體34_5~34_8會被順向偏壓(導通)。由此可知,照明裝置500可選擇電壓饋入點46a、46e、46f與46j以便耦接至交流電源。As shown in FIG. 12, the AC electrodes AC1 and AC2 are moved to be disposed on the bottom plate 22 to be electrically connected to the wires 45, so the series of diodes between the AC power source and the voltage feed points 46a and 46e. The microcrystals 34_1~34_4 form a first loop and form a second loop with the series of diode microcrystals 34_5~34_8 between the voltage feed points 46f and 46j. During one positive half cycle of the AC power source, the diodes 34_1~34_4 in the first loop are forward biased (conducted), and in one negative half cycle of the AC power source, the diodes in the second loop 34_5~34_8 will be forward biased (conducted). It can be seen that the illumination device 500 can select voltage feed points 46a, 46e, 46f and 46j for coupling to an AC power source.

於此實施例中,照明裝置500係藉由交流電極AC1與AC2以及直流電極DC1與DC2,選擇不同組的電壓饋入點,使得照明裝置500可在不需要交流-直流轉換之下,由一交流電源或一直流電源所供電。除此之外,由於二極體微晶粒皆是個別地被直流電源所順向偏壓,因此該直流電源可為一低電壓電源。In this embodiment, the illumination device 500 selects different sets of voltage feed points by the AC electrodes AC1 and AC2 and the DC electrodes DC1 and DC2, so that the illumination device 500 can be replaced by AC-DC conversion. AC power or DC power. In addition, since the diode microcrystals are individually biased by the DC power source, the DC power source can be a low voltage power source.

第13圖係為照明裝置之另一實施例。如圖所示,照明裝置600包括形成於一基板(未圖示)上之複數二極體微晶粒34_1~34_8、一底板24其上具有一導線結構19C(即導線47)、一第一電極模組70以及一第二電極模組80(顯示於第17圖),其中第一、第二電極模組70與80係可移動式地設置於底板24之上。二極體微晶粒34_1~34_8係藉由覆晶接合技術與底板上對應之導線47電性連接。第一電極模組70包括複數交流電極72以及複數絕緣部74,其中每個絕緣部74係設置於兩個交流電極72之間,用以電性隔離兩相鄰之交流電極72。當第一電極模組70中之交流電極72被電性連接至底板24上之導線47時,二極體微晶粒34_1~34_8係會被連接成一串微發光單元21如第14圖中所示,其中每個微發光單元21包括兩個並聯連接之二極體微晶粒。Figure 13 is another embodiment of a lighting device. As shown, the illumination device 600 includes a plurality of diode micro-crystals 34_1~34_8 formed on a substrate (not shown), and a bottom plate 24 having a wire structure 19C (ie, a wire 47) thereon. An electrode module 70 and a second electrode module 80 (shown in FIG. 17), wherein the first and second electrode modules 70 and 80 are movably disposed on the bottom plate 24. The diode micro-grains 34_1~34_8 are electrically connected to the corresponding wires 47 on the substrate by flip chip bonding. The first electrode module 70 includes a plurality of alternating current electrodes 72 and a plurality of insulating portions 74. Each of the insulating portions 74 is disposed between the two alternating current electrodes 72 for electrically isolating the two adjacent alternating current electrodes 72. When the AC electrode 72 in the first electrode module 70 is electrically connected to the wire 47 on the bottom plate 24, the diode micro-crystals 34_1~34_8 are connected into a string of micro-light-emitting units 21 as shown in FIG. It is shown that each of the micro-light-emitting units 21 includes two diode micro-crystals connected in parallel.

第14圖係為第13圖中所示照明裝置之一等效電路圖。如第14圖所示,當第一電極模組70電性耦接至一交流電源時,交流電源與電壓饋入點47a與47e之間的那串二極體微晶粒34_1~34_4形成第一回路,並與電壓饋入點47a與47e之間的那串二極體微晶粒34_5~34_8形成第二回路。換言之,電壓饋入點47a與47e係被選擇用以耦接交流電源,使得二極體微晶粒34_1~34_8與交流電源形成兩個迴路。第一迴路中之二極體微晶粒34_1~34_4係於交流電源之一第一半週期(即正半週期)中被順向導通,而第二迴路中之二極體微晶粒34_5~34_8係於交流電源之一第二半週期(即負半週期)中被順向導通。Figure 14 is an equivalent circuit diagram of one of the illumination devices shown in Figure 13. As shown in FIG. 14, when the first electrode module 70 is electrically coupled to an AC power source, the series of diode micro-crystals 34_1~34_4 between the AC power source and the voltage feeding points 47a and 47e form a first The first loop and the series of diode micro-grains 34_5~34_8 between the voltage feed points 47a and 47e form a second loop. In other words, the voltage feed points 47a and 47e are selected to be coupled to the AC power source such that the diode micro-dies 34_1~34_8 form two loops with the AC power source. The diode microcrystals 34_1~34_4 in the first loop are connected in the first half cycle (ie, the positive half cycle) of the alternating current power source, and the diode microcrystals 34_5~ in the second loop. The 34_8 is lined up in the second half cycle of the AC power supply (ie, the negative half cycle).

於某些實施例中,二極體微晶粒34_1~34_8之每一者皆可被第15圖中所示之兩個二極體微晶粒所取代。舉例而言,二極體微晶粒34_1係可被二極體微晶粒34_1A與34_1B所取代,二極體微晶粒34_2係可被二極體微晶粒34_2A與34_2B所取代,依此類推。當第一電極模組70之交流電極72電性連接至底板24上之導線47時,二極體微晶粒34_1A~34_8A與34_1B~34_8B係被連接成一串微發光單元21,如第16圖中所示,其中每個微發光單元21係包括兩串並聯之二極體微晶粒。舉例而言,一串二極體微晶粒34_1A與34_1B係與另一串二極體微晶粒34_5A與34_5B並聯連接,一串二極體微晶粒34_2A與34_2B係與另一串二極體微晶粒34_6A與34_6B並聯連接,依此類推。In some embodiments, each of the diode micro-grains 34_1~34_8 can be replaced by two diode micro-grains as shown in FIG. For example, the diode micro-grain 34_1 can be replaced by the diode micro-grains 34_1A and 34_1B, and the diode micro-grain 34_2 can be replaced by the diode micro-grains 34_2A and 34_2B. analogy. When the AC electrode 72 of the first electrode module 70 is electrically connected to the wire 47 on the bottom plate 24, the diode micro-crystals 34_1A~34_8A and 34_1B~34_8B are connected into a string of micro-light-emitting units 21, as shown in FIG. As shown therein, each of the micro-light-emitting units 21 includes two strings of parallel diode microcrystals. For example, a series of diode microcrystals 34_1A and 34_1B are connected in parallel with another series of diode microcrystals 34_5A and 34_5B, and a series of diode microcrystals 34_2A and 34_2B are connected to another string of diodes. The bulk microcrystals 34_6A are connected in parallel with 34_6B, and so on.

交流電源與串聯連接於電壓饋入點47a與47e間之二極體微晶粒34_1A~34_4A與34_1B~34_4B係形成一第一迴路,交流電源與串聯連接於電壓饋入點47a與47e間之二極體微晶粒34_5A~34_8A與34_5B~34_8B係形成一第二迴路。當交流電源之一第一半週期(即正半週)時,於第一迴路中之34_1A~34_4A與34_1B~34_4B會被順向偏壓而導通,並且當交流電源之一第二半週期(即負半週)時,於第二迴路中之34_5A~34_8A與34_5B~34_8B會被順向偏壓而導通。The AC power source and the diode micro-crystals 34_1A~34_4A and 34_1B~34_4B connected in series between the voltage feeding points 47a and 47e form a first loop, and the AC power source is connected in series between the voltage feeding points 47a and 47e. The diode microcrystals 34_5A~34_8A and 34_5B~34_8B form a second loop. When one of the AC power supplies is in the first half cycle (ie, positive half cycle), 34_1A~34_4A and 34_1B~34_4B in the first loop are forward biased to be turned on, and when one of the AC power supplies is in the second half cycle ( That is, negative half cycle), 34_5A~34_8A and 34_5B~34_8B in the second loop are forward biased and turned on.

如第17圖中所示,第二電極模組80包括複數第一直流電極82、複數絕緣部84以及一第二直流電極86,其中每個絕緣部84係設置於兩個第一直流電極82之間,用以電性隔離兩相鄰之第一直流電極82。當第二電極模組80中之第一直流電極82與第二直流電極86被電性耦接至底板24上之導線47時,所有二極體微晶粒34_1~34_8之陰極係分別耦接至對應之第一直流電極82,並且所有二極體微晶粒34_1~34_8之陽極係耦接至第二直流電極86。於此情況下,二極體微晶粒34_1~34_8之陰極與陽極係作為電壓饋入點分別耦接至第一直流電極82與第二直流電極86。As shown in FIG. 17, the second electrode module 80 includes a plurality of first DC electrodes 82, a plurality of insulating portions 84, and a second DC electrode 86, wherein each of the insulating portions 84 is disposed on the two first DCs. The electrodes 82 are electrically isolated from the two adjacent first DC electrodes 82. When the first DC electrode 82 and the second DC electrode 86 of the second electrode module 80 are electrically coupled to the wires 47 on the bottom plate 24, the cathodes of all the diode microcrystals 34_1~34_8 are respectively coupled. The first DC electrode 82 is connected to the corresponding first DC electrode 82, and the anodes of all the diode microcrystals 34_1~34_8 are coupled to the second DC electrode 86. In this case, the cathode and anode of the diode micro-crystals 34_1~34_8 are coupled to the first DC electrode 82 and the second DC electrode 86 as voltage feeding points, respectively.

如第18圖中所示,當第二電極模組80電性連接至一直流電源時,該直流電源中一較高之電壓係藉由第二直流電極86耦接至二極體微晶粒34_1~34_8之陽極,並且該直流電源中一較低之電壓(例如GND)係藉由第一直流電極82耦接至二極體微晶粒34_1~34_8之陰極。因此,二極體微晶粒34_1~34_8皆會被直流電源個別地順向偏壓(導通)。換言之,直流電源與二極體微晶粒34_1~34_8係藉由第一、第二直流電極82與86以及導線結構19C(即導線47)形八個迴路。As shown in FIG. 18, when the second electrode module 80 is electrically connected to the DC power source, a higher voltage of the DC power source is coupled to the diode microcrystals by the second DC electrode 86. The anode of 34_1~34_8, and a lower voltage (such as GND) in the DC power source is coupled to the cathode of the diode microcrystals 34_1~34_8 by the first DC electrode 82. Therefore, the diode micro-crystals 34_1~34_8 are individually biased (conducted) by the DC power source. In other words, the DC power source and the diode microcrystals 34_1~34_8 are formed in eight loops by the first and second DC electrodes 82 and 86 and the conductor structure 19C (ie, the conductor 47).

於某些實施例中,二極體微晶粒34_1~34_8之每一者皆可被兩個二極體微晶粒所取代。如第19圖中所示,舉例而言,二極體微晶粒34_1係可被二極體微晶粒34_1A與34_1B所取代,二極體微晶粒34_2係可被二極體微晶粒34_2A與34_2B所取代,依此類推。於此情況下,二極體微晶粒34_1A~34_8A與34_1B~34_8B係之陰極係作為電壓饋入點分別耦接至第一直流電極82,並且二極體微晶粒34_1A~34_8A與34_1B~34_8B之陽極係作為電壓饋入點耦接至第二直流電極86。In some embodiments, each of the diode micro-grains 34_1~34_8 can be replaced by two diode micro-grains. As shown in FIG. 19, for example, the diode microcrystals 34_1 can be replaced by the diode microcrystals 34_1A and 34_1B, and the diode microcrystals 34_2 can be diode microcrystals. 34_2A and 34_2B are replaced, and so on. In this case, the cathodes of the diode microcrystals 34_1A~34_8A and 34_1B~34_8B are respectively coupled as a voltage feeding point to the first DC electrode 82, and the diode microcrystals 34_1A~34_8A and 34_1B The anode of ~34_8B is coupled to the second DC electrode 86 as a voltage feed point.

當第二電極模組80電性連接至直流電源時,該直流電源中一較高之電壓係藉由第二直流電極86耦接至二極體微晶粒34_1B~34_8B之陽極,並且該直流電源中一較低之電壓(例如GND)係藉由第一直流電極82耦接至二極體微晶粒34_1A~34_8A之陰極。換言之,直流電源與二極體微晶粒34_1A~34_8A與34_1B~34_8B係藉由第一、第二直流電極82與86以及導線結構19C(即導線47)形八個迴路。舉例而言,直流電源與一串二極體微晶粒34_1A~34_1B形成一第一迴路,與另一串二極體微晶粒34_2A~34_2B形成一第二迴路,依此類推。因此,每兩個二極體微晶粒,例如34_1A~34_1B、34_2A~34_2B,會被直流電源個別地偏壓(導通)。於某些實施例中,二極體微晶粒34_1~34_8之每一者皆可被三個或更多個二極體微晶粒所取代,於此不再累述。When the second electrode module 80 is electrically connected to the DC power source, a higher voltage of the DC power source is coupled to the anode of the diode micro-crystals 34_1B~34_8B by the second DC electrode 86, and the DC A lower voltage (eg, GND) in the power supply is coupled to the cathode of the diode micro-dies 34_1A-34_8A by the first DC electrode 82. In other words, the DC power source and the diode microcrystals 34_1A~34_8A and 34_1B~34_8B are formed in eight loops by the first and second DC electrodes 82 and 86 and the conductor structure 19C (ie, the conductor 47). For example, the DC power supply forms a first loop with a series of diode micro-grains 34_1A~34_1B, and forms a second loop with another series of diode micro-grains 34_2A~34_2B, and so on. Therefore, every two diode micro-crystals, such as 34_1A~34_1B, 34_2A~34_2B, are individually biased (conducted) by the DC power supply. In some embodiments, each of the diode micro-grains 34_1~34_8 may be replaced by three or more diode micro-grains, which are not described herein.

因此,照明裝置600可藉由移動電極模組來選擇不同組的電壓饋入點,使得照明裝置600可以在不需要交流-直流轉換之下,由直流電源或交流電源所供電。Therefore, the illumination device 600 can select different sets of voltage feed points by moving the electrode module, so that the illumination device 600 can be powered by a DC power source or an AC power source without requiring AC-DC conversion.

雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟知技藝者,在不脫離本發明之精神和範圍內,當可作些許更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope is subject to the definition of the scope of the patent application attached.

19A~19C...導線結構19A~19C. . . Wire structure

20...基板20. . . Substrate

21...微發光單元twenty one. . . Micro-lighting unit

22、24...底板22, 24. . . Bottom plate

30...照明模組30. . . Lighting module

39a~39e...次照明模組39a~39e. . . Secondary lighting module

40...電源40. . . power supply

44...阻絕單元44. . . Blocking unit

50...選擇單元50. . . Selection unit

53、53”...鑑別單元53, 53"...Identification unit

54...輸出單元54. . . Output unit

70...第一電極模組70. . . First electrode module

72、AC1、AC2...交流電極72, AC1, AC2. . . AC electrode

74、84...絕緣部74, 84. . . Insulation

80...第二電極模組80. . . Second electrode module

82...第一直流電極82. . . First direct current electrode

86...第二直流電極86. . . Second DC electrode

100~600...照明裝置100~600. . . Lighting device

DC1、DC2...直流電極DC1, DC2. . . DC electrode

SC...判斷結果SC. . . critical result

SP...功率設定信號SP. . . Power setting signal

L0...電感L0. . . inductance

C0...電容C0. . . capacitance

SM...結果信號SM. . . Result signal

31a~31e、36a~36d、38a~38c、45、47...導線31a~31e, 36a~36d, 38a~38c, 45,47. . . wire

32a~32e、33a~33d、37a~37c、46a~46j、47a~47e...電壓饋入點32a~32e, 33a~33d, 37a~37c, 46a~46j, 47a~47e. . . Voltage feed point

34、34_1~34_8、34_1A~34_8A、34_1B~34_8B...二極體微晶粒34, 34_1~34_8, 34_1A~34_8A, 34_1B~34_8B. . . Dipolar microcrystal

第1圖所示係為本發明中一照明裝置之一實施例。Figure 1 is an embodiment of a lighting device of the present invention.

第2圖係為照明裝置之另一實施例。Figure 2 is another embodiment of a lighting device.

第3圖係為選擇單元之一實施例。Figure 3 is an embodiment of a selection unit.

第4圖係為照明裝置之另一實施例。Figure 4 is another embodiment of a lighting device.

第5圖係為照明裝置之另一實施例。Figure 5 is another embodiment of a lighting device.

第6圖係為照明裝置之一實施例。Figure 6 is an embodiment of a lighting device.

第7圖係表示具有複數二極體微晶粒之基板之一示意圖。Figure 7 is a schematic view showing one of the substrates having a plurality of diode microcrystals.

第8圖係顯示具有複數導體之一底板之一示意圖。Figure 8 is a schematic view showing one of the base plates having a plurality of conductors.

第9圖係為顯示第7圖與第8圖中基板與底板之結合之一示意圖。Figure 9 is a schematic view showing the combination of the substrate and the bottom plate in Figures 7 and 8.

第10圖係顯示第6圖中之照明裝置被直流電源供電之一示意圖。Fig. 10 is a view showing a state in which the lighting device of Fig. 6 is powered by a DC power source.

第11圖係顯示第6圖中之照明裝置被直流電源供電之另一示意圖。Figure 11 is another schematic diagram showing the illumination device of Figure 6 powered by a DC power source.

第12圖係顯示第6圖中照明裝置被交流電源供電之一示意圖。Fig. 12 is a view showing a state in which the lighting device of Fig. 6 is powered by an alternating current source.

第13圖係為具有可移動交流電極之一照明裝置之實施例。Figure 13 is an embodiment of an illumination device having one of the movable AC electrodes.

第14圖係為第13圖中所示照明裝置之一等效電路圖。Figure 14 is an equivalent circuit diagram of one of the illumination devices shown in Figure 13.

第15圖係為第7圖中所示之基板之另一示意圖。Figure 15 is another schematic view of the substrate shown in Figure 7.

第16圖係為第13圖中照明裝置之另一實施例。Figure 16 is another embodiment of the illumination device of Figure 13.

第17圖係顯示具有可移動直流電極之一照明裝置之一實施例。Figure 17 shows an embodiment of a lighting device having one of the movable DC electrodes.

第18圖係為第17圖中照明裝置之一等效電路圖。Figure 18 is an equivalent circuit diagram of one of the illumination devices of Figure 17.

第19圖係為具有可移動直流電極之照明裝置之另一實施例。Figure 19 is another embodiment of a lighting device having a movable DC electrode.

19A...導線結構19A. . . Wire structure

20...基板20. . . Substrate

21...微發光單元twenty one. . . Micro-lighting unit

30...照明模組30. . . Lighting module

31a~31e...導線31a~31e. . . wire

32a~32e...電壓饋入點32a~32e. . . Voltage feed point

34...二極體微晶粒34. . . Dipolar microcrystal

40...電源40. . . power supply

50...選擇單元50. . . Selection unit

100...照明裝置100. . . Lighting device

Claims (20)

一種照明裝置,包含:一第一電壓饋入點;一第二電壓饋入點;一第一微發光單元及一第二微發光單元,係分別包含二個反向並聯之二極體微晶粒;及一選擇單元,係電性連接至該第一微發光單元及該第二微發光單元,並使該第一微發光單元及該第二微發光單元於一第一電壓下相並聯或於第二電壓下相串聯;其中該第一微發光單元及該第二微發光單元係電性連接於該第一電壓饋入點及該第二電壓饋入點之間,且該第二電壓高於該第一電壓。A lighting device comprising: a first voltage feeding point; a second voltage feeding point; a first micro light emitting unit and a second micro light emitting unit, respectively comprising two antiparallel diode crystals And a selection unit electrically connected to the first micro-light-emitting unit and the second micro-light-emitting unit, and connecting the first micro-light-emitting unit and the second micro-light-emitting unit in parallel at a first voltage or The second micro-light-emitting unit and the second micro-light-emitting unit are electrically connected between the first voltage feeding point and the second voltage feeding point, and the second voltage is Above the first voltage. 如申請專利範圍第1項所述之照明裝置,其中該第一電壓係約110伏特。The lighting device of claim 1, wherein the first voltage is about 110 volts. 如申請專利範圍第1項所述之照明裝置,其中該第一電壓係約220伏特。The lighting device of claim 1, wherein the first voltage is about 220 volts. 如申請專利範圍第1項所述之照明裝置,其中該第二電壓約係該第一電壓之二倍。The lighting device of claim 1, wherein the second voltage is about twice the first voltage. 如申請專利範圍第1項所述之照明裝置,其中第一電壓饋入點與該第二電壓饋入點係連接至一交流電源或一直流電源。The lighting device of claim 1, wherein the first voltage feeding point and the second voltage feeding point are connected to an alternating current power source or a direct current power source. 如申請專利範圍第1項所述之照明裝置,其中該二個反向並聯之二極體微晶粒係分時發光。The illuminating device of claim 1, wherein the two antiparallel diode microcrystals emit light in a time-sharing manner. 如申請專利範圍第1項所述之照明裝置,更包含:一基板,其中該二個反向並聯之二極體微晶粒係形成於該基板之上。The illuminating device of claim 1, further comprising: a substrate, wherein the two anti-parallel diode micro-grains are formed on the substrate. 如申請專利範圍第1項所述之照明裝置,更包含:一基板,其中該二極體微晶粒係形成於該基板之上;及一底板,係位於該基板之下。The illuminating device of claim 1, further comprising: a substrate, wherein the diode micro-grain is formed on the substrate; and a bottom plate is disposed under the substrate. 如申請專利範圍第1項所述之照明裝置,更包含:一底板,係具有複數導線,其中該二極體微晶粒係覆晶接合於該底板之上。The illuminating device of claim 1, further comprising: a bottom plate having a plurality of wires, wherein the diode micro-grain is bonded to the bottom plate. 一種照明裝置,包含:一基板;一第一電壓饋入點;一第二電壓饋入點;一第一微發光單元及一第二微發光單元,係藉由半導體製程形成於該基板之上,並電性連接於該第一電壓饋入點及該第二電壓饋入點之間;一選擇單元,係電性連接至該第一微發光單元及該第二微發光單元,並使該第一微發光單元及該第二微發光單元於一第一電壓下相並聯或於一第二電壓下相串聯,且該第二電壓高於該第一電壓。An illumination device comprising: a substrate; a first voltage feed point; a second voltage feed point; a first micro light emitting unit and a second micro light emitting unit formed on the substrate by a semiconductor process And electrically connected between the first voltage feed point and the second voltage feed point; a selection unit electrically connected to the first micro light emitting unit and the second micro light emitting unit, and The first micro-light-emitting unit and the second micro-light-emitting unit are connected in parallel at a first voltage or in series at a second voltage, and the second voltage is higher than the first voltage. 如申請專利範圍第10項所述之照明裝置,更包含:一底板,係位於基板之下。The lighting device of claim 10, further comprising: a bottom plate disposed below the substrate. 如申請專利範圍第10項所述之照明裝置,更包含:一底板,其中該第一微發光單元及該第二微發光單元係覆晶接合於該底板之上。The illuminating device of claim 10, further comprising: a bottom plate, wherein the first micro illuminating unit and the second micro illuminating unit are flip-chip bonded to the bottom plate. 如申請專利範圍第10項所述之照明裝置,更包含:一第三電壓饋入點;及一第三微發光單元,係電性連接於該第三電壓饋入點及該第二電壓饋入點之間。The illuminating device of claim 10, further comprising: a third voltage feeding point; and a third micro illuminating unit electrically connected to the third voltage feeding point and the second voltage feeding Between the in points. 如申請專利範圍第10項所述之照明裝置,其中該第二電壓約係該第一電壓之二倍。The lighting device of claim 10, wherein the second voltage is about twice the first voltage. 一種照明裝置之製作方法,包含:藉由半導體製程形成一第一二極體微晶粒及一第二二極體微晶粒於一基板之上;提供一低電壓以使該第一二極體微晶粒及該第二二極體微晶粒相並聯;及提供一高電壓以使該第一二極體微晶粒及該第二二極體微晶相串聯;其中,該高電壓大於該低電壓。A method of fabricating a illuminating device, comprising: forming a first diode micro-grain and a second diode micro-grain on a substrate by a semiconductor process; providing a low voltage to make the first diode The bulk microcrystals and the second diode microcrystals are connected in parallel; and a high voltage is provided to connect the first diode microcrystals and the second diode microcrystals in series; wherein the high voltage Greater than the low voltage. 如申請專利範圍第15項所述之照明裝置之製作方法,更包含:提供一選擇單元以選擇該第一二極體微晶粒及該第二二極體微晶粒之串聯或並聯。The method for fabricating the illumination device of claim 15, further comprising: providing a selection unit to select the series or parallel connection of the first diode microcrystal and the second diode microcrystal. 如申請專利範圍第15項所述之照明裝置之製作方法,更包含:提供一直流電源或一交流電源予該第一二級體微晶粒及該第二二極體微晶粒。The method for fabricating a lighting device according to claim 15, further comprising: providing a DC power source or an AC power source to the first diode microcrystal and the second diode microcrystal. 如申請專利範圍第15項所述之照明裝置之製作方法,更包含:提供一底板於該基板之下。The method for manufacturing a lighting device according to claim 15, further comprising: providing a bottom plate under the substrate. 一種照明裝置之製作方法,包含:藉由半導體製程形成一第一二極體微晶粒及一第二二極體微晶粒於一基板之上;形成一第一迴路於該第一二極體微晶粒及該第二二極體微晶粒之間;形成一第二迴路於該第一二極體微晶粒及該第二二極體微晶粒之間;及提供一選擇單元,以根據一第一電壓或一第二電壓導通該第一迴路或該第二迴路;其中,該第一電壓不等於該第二電壓。A method for fabricating a lighting device includes: forming a first diode micro-grain and a second diode micro-grain on a substrate by a semiconductor process; forming a first loop in the first diode Between the body microcrystal and the second diode microcrystal; forming a second loop between the first diode microcrystal and the second dipole microcrystal; and providing a selection unit And conducting the first loop or the second loop according to a first voltage or a second voltage; wherein the first voltage is not equal to the second voltage. 如申請專利範圍第19項所述之照明裝置之製作方法,其中該第一電壓係低於該第二電壓。The method of fabricating a lighting device according to claim 19, wherein the first voltage is lower than the second voltage.
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JP2002016290A (en) * 2000-06-28 2002-01-18 Toshiba Lighting & Technology Corp Led light source device
US20040178751A1 (en) * 1997-08-26 2004-09-16 Color Kinetics, Incorporated Multicolored lighting method and apparatus
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JP2006147933A (en) * 2004-11-22 2006-06-08 Matsushita Electric Works Ltd Light emitting diode illuminating device
TWI273858B (en) * 2005-05-17 2007-02-11 Neobulb Technologies Inc Light-emitting diode cluster lamp

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040178751A1 (en) * 1997-08-26 2004-09-16 Color Kinetics, Incorporated Multicolored lighting method and apparatus
JP2002016290A (en) * 2000-06-28 2002-01-18 Toshiba Lighting & Technology Corp Led light source device
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JP2006147933A (en) * 2004-11-22 2006-06-08 Matsushita Electric Works Ltd Light emitting diode illuminating device
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