KR101348000B1 - Lighting apparatus with light-emitting semiconductor device and method of driving the same - Google Patents

Abstract

An optical semiconductor lighting apparatus and a driving method thereof are disclosed. Such an optical semiconductor lighting apparatus includes a printed circuit board, optical semiconductor light emitting devices, a driver, and a standby power blocking unit. The optical semiconductor light emitting devices are mounted on the printed circuit board, and are optical semiconductor light emitting devices each including one or more light emitting cells, and the optical semiconductor light emitting devices form a plurality of groups connected in series with each other. The driving unit is mounted on the printed circuit board to drive the optical semiconductor light emitting device. The driving unit includes a power supply unit and a control unit. The power supply unit rectifies an external AC. The controller determines a voltage level or input period of the rectified power rectified from the power supply unit, and selectively drives some of the groups according to the determined voltage level or input period. The standby power blocking unit blocks standby power from being applied to the optical semiconductor light emitting devices.

Description

LIGHTING APPARATUS WITH LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME}

The present invention relates to an optical semiconductor lighting apparatus and a driving method thereof, and more particularly, to an optical semiconductor lighting apparatus having an IC rectifying element and a driving method thereof.

Since blue light emitting diodes (LEDs) have been developed, white light can be realized, and thus light emitting diodes are used for general lighting and are gradually expanding their applications. Lighting devices using such light emitting diodes have a long life, quick response time, and low power consumption compared to conventional lighting devices, and are widely used.

Optical semiconductor devices, including light emitting diodes, emit light by direct current. Therefore, the power supplied by alternating current must be converted into direct current and supplied to the optical semiconductor elements. To this end, the lighting device using the optical semiconductor element includes a rectifier for converting alternating current into direct current.

However, these rectifiers are not only formed in a considerable size compared to the optical semiconductor elements, but also do not properly release heat generated from the rectifiers, which causes a major failure of the lighting apparatus using the optical semiconductor elements.

For this reason, efforts are being made to solve this problem of rectifiers, and as one of the methods, attempts to integrate the rectifiers continue.

Moreover, in the case of an optical semiconductor lighting device driven by DC, a number of components such as a smoothing circuit, a transformer, a DC / DC converter, etc., in addition to the rectifier are required, and the capacitors used in these components have a short lifespan, so that the life of the whole optical semiconductor lighting device is short. There is a problem lowering.

In addition, the power supply unit (PSU) or SMPS constituting the driving unit has a predetermined volume or more, and generates heat in the process of being driven by the power supply. The heat generated in this way affects the semiconductor optical device, thereby lowering the light efficiency. Therefore, in order to solve such a problem, it is necessary to consider a separate heat dissipation member or problem solving for heat dissipation.

Therefore, the problem to be solved by the present invention is that the rectifier is integrated, and the full-wave rectified power source can be driven by the full-wave rectified power source itself without smoothing and DC / DC converting, and the PSU on the printed circuit board Another object of the present invention is to provide an optical semiconductor lighting apparatus capable of solving a problem of heat dissipation caused by a portion of an increased weight using an existing PSU or SMPS through an IC type driving unit such as an SMPS integrated unit.

In addition, the problem to be solved by the present invention, in the optical semiconductor lighting apparatus driven by full-wave rectified AC, when the switch for turning on the lighting apparatus is turned off, the optical semiconductor lighting apparatus that is not driven by the standby power To provide.

An optical semiconductor lighting apparatus according to an exemplary embodiment of the present invention for achieving the above object includes a printed circuit board, optical semiconductor light emitting elements, a driver and a standby power cut-off. The optical semiconductor light emitting devices are mounted on the printed circuit board, and are optical semiconductor light emitting devices each including one or more light emitting cells, and the optical semiconductor light emitting devices form a plurality of groups connected in series with each other. The driving unit is mounted on the printed circuit board to drive the optical semiconductor light emitting device. The driving unit includes a power supply unit and a control unit. The power supply unit rectifies an external AC. The controller determines a voltage level or input period of the rectified power rectified from the power supply unit, and selectively drives some of the groups according to the determined voltage level or input period. The standby power blocking unit blocks standby power from being applied to the optical semiconductor light emitting devices.

For example, the standby power blocking unit may include a capacitor coupled in parallel with the driving unit.

The optical semiconductor lighting apparatus may further include a heat insulating member for thermally blocking the standby power blocking unit from at least one of the driving unit and the optical semiconductor light emitting devices.

In this case, the heat insulating member surrounds the capacitor, and the heat insulating member may be formed to include an inner wall, an outer wall, and a heat insulating material formed between the inner wall and the outer wall.

In addition, the optical semiconductor lighting device may further include a surge protection circuit. The surge protection circuit may include a varistor and a fuse. The varistor is connected in parallel with the standby power cutoff unit, and the fuse is electrically connected to the standby power cutoff unit.

In addition, each of the optical semiconductor light emitting devices may be disposed at the same distance as the driving unit.

For example, the optical semiconductor light emitting devices may be arranged in a circular shape, and the driving unit may be disposed at the center thereof.

On the other hand, the optical semiconductor light emitting devices forming the same group may be disposed not to be adjacent to each other, or the optical semiconductor light emitting devices forming the same group may be arranged to be adjacent to each other.

For example, each group may include the same number of optical semiconductor light emitting devices.

The control unit may include a driving voltage detector configured to determine a voltage level of the rectified power rectified by the power supply unit, and a switching unit selectively driving the groups based on a signal applied from the driving voltage detector.

Alternatively, the controller may include an input period detector for determining an input period of the rectified power rectified from the power supply unit, and a switching unit for selectively driving the groups by a signal received from the input period detector.

In this case, the optical semiconductor light emitting devices form N groups (N is a natural number of 2 or more), the switching unit includes (N-1) switches, and the anode of the first optical semiconductor light emitting device of the first group is a driving voltage. The anode of the first optical semiconductor light emitting device of the M group (M is a natural number greater than 1 and less than N) is electrically connected to the first switch, and the cathode is electrically connected to the first switch. Electrically connected to the switch, the cathode is electrically connected to the Mth switch, the anode of the first optical semiconductor light emitting device of the Nth group is electrically connected to the (N-1) th switch, and the cathode is electrically connected to ground. Can be.

In this case, the switches of the switching unit may electrically connect the groups to drive while continuously adding the optical semiconductor light emitting devices of the first group, the second group, and the K-th group during the half period of the full-wave rectified voltage.

Alternatively, the switches of the switching unit may electrically connect the groups to sequentially drive the optical semiconductor light emitting devices of the first group, the second group, and the K-th group during the half period of the full-wave rectified voltage.

In this case, the control unit further includes a resistance that increases as K increases, between K (K is a natural number from 1 to N-1) th switches and the (K + 1) th group, thereby reducing the corresponding voltage. It can be applied to the group of the optical semiconductor light emitting device.

In accordance with an embodiment of the present invention, an optical semiconductor lighting apparatus and a driving method thereof determine a voltage level or an input period of a rectified power rectified from the power supply unit, and selectively drive some of the groups according to the determined voltage level or input period. do. Therefore, AC power can be driven with only rectification, which can greatly reduce the number of components such as converters and transformers, reduce failures, increase service life, and reduce manufacturing costs of products. When the switch for turning on the lighting apparatus is turned off, including the power interrupting unit, it is not driven by the standby power.

The optical semiconductor lighting apparatus may further include a heat insulating member for thermally blocking the standby power blocking unit from at least one of the driving unit and the optical semiconductor light emitting elements, thereby deteriorating the standby power blocking unit. Breakage can be reduced.

In addition, when each of the optical semiconductor light emitting devices is disposed at the same distance from the driving unit, heat generated from the driving unit is uniformly transferred to each of the optical semiconductor light emitting elements so that each of the optical semiconductor light emitting devices generates light having a uniform brightness. can do.

On the other hand, when the optical semiconductor light emitting devices forming the same group are arranged not to be adjacent to each other, the optical semiconductor light emitting devices that emit light alternately may be evenly distributed. This case is preferable for an optical semiconductor lighting apparatus of a relatively large size.

Alternatively, when the optical semiconductor light emitting elements forming the same group are arranged to be adjacent to each other, the wiring is simplified on the printed circuit board. This case is preferable for an optical semiconductor lighting apparatus of a relatively small size.

Meanwhile, K (K is a natural number from 1 to N-1) and the (K + 1) -th group further include a resistance that increases as K increases, thereby lowering the corresponding voltage to decrease the light. When applied to the groups of semiconductor light emitting devices, a relatively even voltage is applied to each of the groups, so that a relatively uniform luminance can be maintained only by the full-wave rectified power source.

1 is a cross-sectional view showing a part of an optical semiconductor light emitting device adopted in an optical semiconductor lighting apparatus according to an exemplary embodiment of the present invention.
FIG. 2 is a plan view of the optical semiconductor light emitting device shown in FIG. 1.
3 is a plan view of an optical semiconductor lighting apparatus according to an exemplary embodiment of the present invention.
FIG. 4 is a block diagram of the optical semiconductor lighting apparatus shown in FIG. 3.
FIG. 5 is a block diagram illustrating in detail the control unit illustrated in FIG. 4.
FIG. 6 is a block diagram illustrating another embodiment of the controller shown in FIG. 4.
7 is a waveform diagram illustrating an example of dividing a full-wave rectified voltage.
8 is a block diagram of an optical semiconductor lighting apparatus according to another exemplary embodiment of the present invention.
FIG. 9 is a cross-sectional view showing the front of the optical semiconductor illuminating device shown in FIG. 8.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings, It will be possible. The present invention is not limited to the following embodiments and may be embodied in other forms. The embodiments disclosed herein are provided so that the disclosure may be more complete and that those skilled in the art will be able to convey the spirit and scope of the present invention. In the drawings, the size of each device or film (layer) and regions is exaggerated for clarity of the invention, and each device may have various additional devices not described herein.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

Optical semiconductor lighting device

1 is a cross-sectional view showing a part of an optical semiconductor light emitting device adopted in an optical semiconductor lighting apparatus according to an exemplary embodiment of the present invention, Figure 2 is a plan view of the optical semiconductor light emitting device shown in FIG.

1 and 2, the optical semiconductor light emitting device 100 employed in the optical semiconductor lighting apparatus according to an exemplary embodiment of the present invention may include a plurality of light emitting cells 100a and 100b. For example, the optical semiconductor light emitting device 100 may be configured of four light emitting cells, as shown in FIG. 2.

Referring to FIG. 1, each of the light emitting cells 100a and 100b includes an n-type semiconductor layer 110, an active layer 120, and a p-type semiconductor layer 130 sequentially stacked on a substrate S. Referring to FIG. In addition, for example, the transparent electrode layer 140 may be formed on the p-type semiconductor layer 130, and the p-type electrode 150 may be formed on the transparent electrode layer 140. Meanwhile, the transparent electrode layer 140, the p-type semiconductor layer 130, and the active layer 120 are etched to expose a portion of the n-type semiconductor layer 110, and the exposed n-type semiconductor layer 110 is exposed. The n-type electrode 160 is formed in the.

Meanwhile, the light emitting cells 100a and 100b are exemplary, and the light emitting cells 100a and 100b may further include various films and may be formed in various structures.

As shown in FIGS. 1 and 2, the p-type electrode 150 of one of the light emitting cells 100b of each of the optical semiconductor light emitting devices 100 is adjacent to each other. The light emitting cell 100a may be formed to be adjacent to the n-type electrode 160. In addition, the p-type electrode 150 and the n-type electrode 160 of the adjacent light emitting cells 100a and 100b are electrically connected through a wire 170 so that the optical semiconductor light emitting devices 100 may be connected in series with each other. Can be.

As such, the p-type electrode 150 of any one of the light emitting cells 100a and 100b of each of the optical semiconductor light emitting devices 100 is an n-type of a neighboring light emitting cell 100a. When formed to be adjacent to the electrode 160, the length of the wire 170 can be minimized and the wiring process can be facilitated, and the crossing of the wires 170 can be prevented, so that the wires 170 Short circuit can be prevented.

Meanwhile, the present invention is not limited to the embodiment of the wire 170, and forms a passivation film between each of the light emitting cells 100 and coats a conductive member (not shown) that serves as the wire. It is also possible to form a passivation layer on the top again.

3 is a plan view of an optical semiconductor lighting apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 3, an optical semiconductor lighting apparatus 1000 according to an exemplary embodiment of the present invention includes a printed circuit board 1100, an optical semiconductor light emitting device 100, and a driver 1200.

The optical semiconductor light emitting devices 100 and the driving unit 1200 are mounted on the printed circuit board 1100. In this case, each of the optical semiconductor light emitting devices 100 may be disposed at the same distance as the driving unit 1200. Here, the 'equal distance' is a concept including a certain error range. For example, the optical semiconductor light emitting devices 100 may be arranged in a circular shape, and the driving unit 1200 may be disposed at the center thereof. Therefore, the heat generated by the driver 1200 is uniformly transferred to each of the optical semiconductor light emitting devices 100, so that each of the optical semiconductor light emitting devices 100 may generate light having a uniform brightness.

In general, when an optical semiconductor light emitting device is mounted on a printed circuit board in the form of a package, and an IC constituting the driving unit 1200 is mounted at the same time, heat generated in the optical semiconductor light emitting device 100 is usually 60 to 80 degrees. Within. If the heat generated in the IC device is more than 100 degrees, it is necessary to maintain the gap so that the heat transfer to the package near the IC device does not reduce the optical efficiency of the package. In addition, if the IC occupies a large portion of the printed circuit board, the light efficiency of the package due to heat generated in the IC will be degraded. Therefore, when the IC constituting the driving unit 1200 and the optical semiconductor light emitting devices 100 are disposed at the same distance, the optical semiconductor light emitting devices 100 may generate light having relatively uniform luminance.

In addition, when the height of the IC disposed on the printed circuit board is higher than the height of the package, a dark portion may be generated due to the IC of light emitted from the package. Therefore, ICs should not be formed essentially higher than the height of the package.

It would also be desirable to color the IC white if possible for light reflection.

FIG. 4 is a block diagram of the optical semiconductor lighting apparatus shown in FIG. 3.

Referring to FIG. 4, the driving unit 1200 of the optical semiconductor lighting apparatus 1000 includes a power supply unit 1210 and a control unit 1220. The power supply unit 1210 rectifies and transmits AC power applied from the outside to the control unit 1220. To this end, the power supply unit 1210 may be configured as a half-wave rectifier circuit or a full-wave rectifier circuit. Preferably, the power supply unit 1210 includes a full-wave rectifier circuit.

On the other hand, the power supply unit 1210 may further include a surge protection circuit composed of a varistor or the like that can protect the circuit from the surge voltage, a fuse circuit for protecting the circuit from overcurrent.

The controller 1220 controls the driving of the optical semiconductor light emitting devices by receiving the full wave rectified power from the power supply 1210. In this case, the optical semiconductor light emitting devices are one or more optical semiconductor devices connected in series to form a plurality of groups (G1, G2, ..., GN, N are natural numbers). That is, one or more optical semiconductor light emitting devices are connected in series in each of the groups G1, G2, ..., GN. At this time, each of the groups G1, G2, ..., GN may include the same number of optical semiconductor light emitting devices. Thus, when the same voltage is applied, each of the groups G1, G2, ..., GN generates light of the same brightness.

Each of these groups G1, G2,..., GN is independently electrically connected to the controller 1220 and individually controlled by the controller 1220.

In more detail, the controller 1220 determines the voltage level (see FIG. 5) or the input period (see FIG. 6) of the rectified power rectified by the power supply 1210, and according to the determined voltage level or the input period, Selectively drive some of the groups. That is, the controller 1220 may divide the full-wave rectified power source according to the voltage level, and drive one of the groups G1, G2,..., And GN corresponding to each level. Alternatively, the control unit 1220 divides the full-wave rectified power according to an input period (in other words, time), and corresponds to any of the groups G1, G2, ..., GN corresponding to each level. You can drive one.

FIG. 5 is a block diagram illustrating the control unit shown in FIG. 4 in more detail. FIG. 6 is a block diagram illustrating another embodiment of the control unit shown in FIG. 4.

4 and 5, the driver 1220 may include a driving voltage detector 1221 and a switch 1222. The switching unit 1222 includes a plurality of switches, for example, (N-1) switches S1, S2,..., SN-1. For example, the K-th switch (SK, K is a natural number of 1 or more and N-1 or less) connects the cathode of the last optical semiconductor light emitting element of the K-th group (GK) to ground, or the K + 1th group (GK + The anode of the first optical semiconductor light emitting device of 1) is connected to the driving voltage detector 1221.

The anode of the first optical semiconductor light emitting device of the first group G1 of the optical semiconductor light emitting devices is electrically connected to the driving voltage detector 1221, and the cathode of the last optical semiconductor light emitting device of the first group G1 is first. It is electrically connected to the switch S1.

The anode of the first optical semiconductor light emitting device of the second group G2 of the optical semiconductor light emitting devices is electrically connected to the first switch S1, and the cathode of the last optical semiconductor light emitting device of the second group G2 is the second switch. It is electrically connected with (S2).

In this way, the anode of the first optical semiconductor light emitting device of the Nth group GN of the optical semiconductor light emitting devices is electrically connected to the (N-1) th switch S (N-1), and the first group ( The cathode of the last optical semiconductor light emitting element of G1) is electrically connected to ground.

Each of the switches S1, S2,..., S (N-1) of the switching unit 1222 is electrically connected to the driving voltage detector 1221 and controlled by the driving voltage detector 1221. The cathodes of the last optical semiconductor light emitting element of each group are selectively connected to ground.

7 is a waveform diagram illustrating an example of dividing a full-wave rectified voltage.

4, 5, and 7, the driving voltage detector 1221 first divides the full-wave rectified power applied from the power supply unit 1200 into constant voltages V0, V1, ..., VN. do. Here, the voltage V0 is a minimum voltage for driving any one of the optical semiconductor light emitting device groups G1, G2, ..., GN. On the other hand, for example, the VN voltage can be set to the maximum voltage of the full-wave rectified power supply.

For example, each voltage may be divided at equal intervals. However, this is divided for convenience and may be divided at different intervals.

On the other hand, the full-wave rectified power may be divided at regular time intervals.

Hereinafter, the operation of the driving unit 1200 will be described.

First Embodiment of Operation of the Driver 1200

4, 5, and 7 again, V0 is a voltage capable of driving one group of optical semiconductor light emitting devices, V1 is a voltage capable of driving two groups, and thus, VN-1 is N Voltage for driving two groups. That is, all the groups are not driven from 0 to V0, and only the optical semiconductor light emitting devices of the first group G1 are driven in V0 to V1, and the optical semiconductor light emitting of the first group G1 and the second group G2 is driven in V1 to V2. Only the devices are driven. In this way, in VK-1 to VK, all the groups are driven from the first group G1 to the VK (K is a natural number from 1 to N) th group GK. In this case, all of the driven groups are electrically connected to each other in series, and since the optical semiconductor light emitting devices are connected to each other in series within each group, the optical semiconductor light emitting devices of all the driven groups are connected to each other in series.

To this end, driving of the switches S1, S2,..., SN-1 of the switching unit 1222 will be described.

Initially, the switches S1, S2,..., And SN-1 of the switching unit 1222 are used to determine the cathode of the last optical semiconductor light emitting device of each group G1, G2,..., GN-1. It is electrically connected to ground. Therefore, the output voltage of the driving voltage detector 1221 is not electrically connected to the second groups G2, G3, ..., GN.

The output voltage of the driving voltage detector 1221 is applied to the anode of the first optical semiconductor light emitting device of the first group G1, and when the voltage reaches V0, the optical semiconductor light emitting devices of the first group G1 are driven. To start. In this case, the switching unit 1222 electrically connects the cathode of the last optical semiconductor light emitting device of the first group G1 to ground, so that the first group G1 emits light.

When the voltage reaches V1, the driving voltage detector 1221 changes the connection state of the first switch S1, so that the first switch S1 sets the cathodes of the last optical semiconductor light emitting elements of the first group G1 to the two. The first group G1 and the second group G2 are electrically connected to the anode of the first optical semiconductor light emitting device of the first group G2, and the first group G1 and the second group G2 are connected in series. The optical semiconductor light emitting elements of G2) are driven.

In this manner, when the voltage reaches VK-1 (K is a natural number of 1 or more and N or less), the driving voltage detector 1221 changes the connection state of the K-1 th switch SK-1, and the K-1 The first switch SK-1 electrically connects the cathode of the last optical semiconductor light emitting device of the K-1 th group GK-1 with the anode of the first optical semiconductor light emitting device of the K th group GK. The first group G1 to the K-th group GK are connected in series to drive the optical semiconductor light emitting devices of the first group G1 to the K-th group GK.

Thereafter, since the operation of the switching unit 1222 in the process of decreasing the voltage is the reverse of the above-described operation, a detailed description thereof will be omitted.

In this case, within one period of the voltage, the number of groups of the optical semiconductor light emitting elements changes, but because the frequency is large, it is not visually detectable and is higher than in the second embodiment of the operation of the driver 1220 described below. Luminance can be achieved.

Second Embodiment of Operation of the Driver 1200

4, 5, and 7, initially, the switches S1, S2,..., SN-1 of the switching unit 1222 are each group G1, G2,..., GN The cathode of the last optical semiconductor light emitting device of -1) is electrically connected to the ground. Therefore, the output voltage of the driving voltage detector 1221 is not electrically connected to the second groups G2, G3, ..., GN.

The output voltage of the driving voltage detector 1221 is applied to the anode of the first optical semiconductor light emitting device of the first group G1, and when the voltage reaches V0, the optical semiconductor light emitting devices of the first group G1 are driven. To start.

Then, when the voltage reaches V1, the driving voltage detector 1221 changes the connection state of the first switch S1, so that the first switch S1 moves the driving voltage detector 1221 to the first of the second group G2. Electrically connecting the anode of the optical semiconductor light emitting device, and opening the cathode of the last optical semiconductor light emitting device of the first group G1 from the ground to stop driving of the optical semiconductor light emitting devices of the first group G1; The optical semiconductor light emitting devices of the second group G2 are driven.

Thereafter, when the voltage reaches V2, the driving voltage detector 1221 changes the connection state of the second switch S2, and the second switch S2 causes the driving voltage detector 1221 to be the first of the third group G3. Electrically connecting the anode of the optical semiconductor light emitting device, and opening the cathode of the last optical semiconductor light emitting device of the second group G2 from the ground to stop driving of the second group G2 of the optical semiconductor light emitting devices; The third group G3 drives the optical semiconductor light emitting devices.

By sequentially proceeding with this process, the groups G1, G2, ..., GN of the optical semiconductor light emitting devices are sequentially driven.

On the other hand, as described above, when each section of the divided voltage is applied to the groups (G1, G2, ..., GN) of the corresponding optical semiconductor light emitting device, respectively, since the magnitude of the voltage of each section is relatively large The luminance difference may occur between the groups G1, G2,..., And GN.

To correct this, the controller 1200 further includes a resistance that increases as K increases between K (K is a natural number from 1 to N-1) th switches and the (K + 1) th group. Thus, the corresponding voltage may be lowered and applied to the optical semiconductor light emitting device groups G1, G2, ..., GN.

That is, when the voltage reaches V1 and the second group G2 is driven, the voltage is dropped by ΔV1, and when the voltage reaches V2, the voltage is dropped by ΔV2 when the third group G3 is driven.

On the other hand, when the number of dividing the full-wave rectified power source is increased, the voltage applied in each section becomes more even, and flickering can be further reduced.

In this case, since the number of optical semiconductor light emitting devices that emit light for one period of voltage is the same as that of the first embodiment of the operation of the driving unit 1220 described above, the luminance is relatively low while providing relatively even luminance.

In addition, the mapping of the divided full-wave rectified power source and each group may be variously modified.

By driving in this way, it is possible to reduce the manufacturing cost by drastically reducing the number of parts by performing only rectification and driving without converting alternating current into a uniform direct current. Can be prevented. In addition, each group includes the same number of optical semiconductor light emitting elements, and a relatively uniform luminance can be achieved by applying a relatively uniform voltage to each group.

Referring to FIG. 6, the driver 1220 may include an input period detector 1223 and a switch 1222. The driving voltage detector 1221 in FIG. 5 detects a driving voltage to control the switches S1, S2,..., And SN-1 of the switching unit 1222, while the input period detector 1223. ) Is substantially the same except that the input periods, i.e., time, are used to control the respective switches S1, S2, ..., SN-1 of the switching part 1222. Therefore, redundant description is omitted.

8 is a block diagram of an optical semiconductor lighting apparatus according to another exemplary embodiment of the present invention.

Referring to FIG. 8, the optical semiconductor lighting apparatus 1000 according to another exemplary embodiment of the present invention may include a printed circuit board 1100, an optical semiconductor light emitting device 100, a driver 1200, and a standby power cut-off unit ( 1400). The optical semiconductor lighting apparatus 1000 according to the present embodiment is substantially the same except for the optical semiconductor lighting apparatus 1000 and the standby power cutoff unit 1400 disclosed in FIG. 4. Therefore, the same components denote the same reference numerals, and redundant descriptions are omitted.

When the switch for driving the lighting is turned off by attaching a weak light source to the switch to check the switch attached to the wall lamp even in a dark place, the micro light source of the switch emits light, and the switch is turned on to illuminate the light. In some cases, a switch is used to drive the micro light source of the switch to be turned off.

For example, the micro light source of the off state switch may be driven by the standby power of the AC input unit 1500.

Such standby power may cause a case where the optical semiconductor elements of the first group G1 are driven even when the switch is turned off.

As such, in order to prevent standby power from being applied to the optical semiconductor light emitting devices while the switch is turned off to drive the optical semiconductor elements, the optical semiconductor lighting apparatus according to the present embodiment may turn off the standby power cut-off unit 1400. Include.

The standby power cut-off unit 1400 bypasses a part of the current applied to the optical semiconductor light emitting elements of the first group G1, and thus, the first group G1 includes an optical semiconductor of the first group G1. Insufficient current flows to drive the light emitting device, thereby preventing the optical semiconductor devices of the first group G1 from being driven when the switch is turned off.

In addition, the optical semiconductor lighting apparatus 1000 according to another exemplary embodiment of the present invention may further include a surge protection circuit 1300. The surge protection circuit 1300 may include a varistor 1320 and a fuse 1310. The varistor 1320 is connected in parallel with the standby power blocking unit, and the fuse 1310 is electrically connected to the standby power blocking unit. The surge protection circuit 1300 may adopt another surge protection circuit that is widely used, and protects the optical semiconductor lighting apparatus 1000 when an external transient abnormal voltage is applied.

FIG. 9 is a cross-sectional view showing the front of the optical semiconductor illuminating device shown in FIG. 8.

Referring to FIG. 9, the standby power cutoff unit 1400 is mounted on the printed circuit board 1100. For example, the standby power blocking unit 1400 is formed of a capacitor.

As mentioned above, heat is generated in the driving unit 1200 and the optical semiconductor light emitting device 100 mounted on the printed circuit board 1100. Since the capacitor is vulnerable to heat, it may cause frequent failures. .

In order to prevent this, the optical semiconductor lighting apparatus 1000 may further include a heat insulating member 1600.

For example, the heat insulating member 1600 may surround the standby power blocking unit 1400, and include an outer wall 1610, an inner wall 1620, and an insulation 1630 formed between the outer wall 1610 and the inner wall 1620. Can be.

For example, the outer wall 1610 and the inner wall 1620 may be formed by injecting a polybutylene terephthalate (PBT) resin, and the insulation 1630 may be formed of styrofoam. In addition, the outer wall 1610, the inner wall 1620, and the heat insulating material 1630 may be formed of various materials, and the shape thereof may also be variously modified according to the shape of the standby power cut-off unit 1400.

Although not shown, a plurality of holes may be formed on the top surface of the heat insulating member 1600.

In addition, in order to prevent the generation of the dark portion, the height of the heat insulating member 1600 based on the printed circuit board 1100 may be formed to be lower than the height of the optical semiconductor light emitting device 100. In addition, the outer wall 1610 of the heat insulating member 1600 may be coated in white for light reflection.

The optical semiconductor lighting apparatus according to the present invention determines the voltage level or input period of the rectified power source rectified from the power supply unit, and selectively drives some of the groups according to the determined voltage level or input period. Therefore, it is possible to drive the AC power in the state of rectifying only, it is possible to greatly reduce the number of components, such as converters, transformers, can reduce the failure, increase the life, and reduce the manufacturing cost of the product.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: optical semiconductor light emitting device 100a, 100b: light emitting cell
110: n-type semiconductor layer 120: active layer
130: p-type semiconductor layer 140: transparent electrode
150: p-type electrode 160: n-type electrode
170: wire 1000: optical semiconductor lighting device
1100: printed circuit board 1200: driver
1210: power supply unit 1220: control unit
1221: driving voltage detector 1222: switching unit
1223: input period detection unit 1300: surge protection circuit
1310: Resistance 1320: Varistor
1400: standby power cut-off unit 1410: capacitor
1500: AC input unit 1600: heat insulating member
1610: outer wall 1620: inner wall
1630: insulation

Claims (20)

Printed circuit board;
An optical semiconductor light emitting element mounted on the printed circuit board, each of the optical semiconductor light emitting elements including one or more light emitting cells, the optical semiconductor light emitting elements forming a plurality of groups connected in series with each other;
An integrated driver mounted on the printed circuit board to drive the optical semiconductor light emitting device; And
A standby power blocking unit including a capacitor coupled in parallel with the driving unit to block standby power from being applied to the optical semiconductor light emitting devices;
The driving unit includes:
A power supply unit rectifying external AC; And
A control unit for determining a voltage level or an input period of the rectified power rectified from the power supply unit, and selectively driving a part of the groups according to the determined voltage level or the input period,
The standby power blocking unit, the optical semiconductor lighting device comprising a heat insulating member for thermally blocking at least one of the driving unit and the optical semiconductor light emitting elements. delete delete The method of claim 1,
The insulation member surrounds the capacitor,
The heat insulating member is an optical semiconductor lighting device comprising an inner wall, an outer wall and a heat insulating material formed between the inner wall and the outer wall. The method of claim 1,
A varistor connected in parallel with the standby power blocking unit; And
And a surge protection circuit including a fuse electrically connected to the standby power cut-off unit. The method of claim 1,
Each of the optical semiconductor light emitting elements are disposed at the same distance as the driving unit. The method according to claim 6,
The optical semiconductor light emitting devices are arranged in a circular shape, the optical semiconductor lighting device, characterized in that the drive unit is disposed in the center. The method according to claim 6,
The optical semiconductor light emitting device forming the same group is disposed so as not to neighbor each other. The method according to claim 6,
The optical semiconductor light emitting device forming the same group, the optical semiconductor lighting device, characterized in that arranged to be adjacent to each other. The method of claim 1,
Each group includes the same number of optical semiconductor light emitting elements. The method of claim 1,
The control unit,
A driving voltage detector determining a voltage level of the rectified power rectified from the power supply unit; And
And a switching unit for selectively driving the groups by a signal applied from the driving voltage detection unit. 12. The method of claim 11,
The optical semiconductor light emitting devices form N groups (N is a natural number of 2 or more),
The switching unit includes (N-1) switches,
The anode of the first optical semiconductor light emitting device of the first group is electrically connected to the driving voltage detector, the cathode is electrically connected to the first switch,
The anode of the first optical semiconductor light emitting device of the M (M is a natural number greater than 1 and less than N) group is electrically connected to the (M-1) -th switch, the cathode is electrically connected to the M-th switch,
And an anode of the first optical semiconductor light emitting device of the Nth group is electrically connected to the (N-1) th switch, and a cathode is electrically connected to the ground. The method of claim 12,
And the switches of the switching unit electrically connect the groups to drive while continuously adding the optical semiconductor light emitting devices of the first group, the second group, and the K-th group during the half period of the full-wave rectified voltage. The method of claim 12,
And the switches of the switching unit electrically connect the groups to sequentially drive the optical semiconductor light emitting devices of the first group, the second group, and the K-th group during the half period of the full-wave rectified voltage. 15. The method of claim 14,
The controller may further include a resistance that increases as K increases, between K (K is a natural number from 1 to N-1) th switches and the (K + 1) th group, thereby lowering the corresponding voltage to decrease the voltage. Optical semiconductor lighting device, characterized in that applied to the optical semiconductor light emitting device groups. The method of claim 1,
The control unit,
An input period detection unit determining an input period of the rectified power rectified from the power supply unit; And
And a switching unit for selectively driving the groups by a signal applied from the input period detecting unit. 17. The method of claim 16,
The optical semiconductor light emitting devices form N groups (N is a natural number of 2 or more),
The switching unit includes (N-1) switches,
The anode of the first optical semiconductor light emitting device of the first group is electrically connected to the input period detector, the cathode is electrically connected to the first switch,
The anode of the first optical semiconductor light emitting device of the M (M is a natural number greater than 1 and less than N) group is electrically connected to the (M-1) -th switch, the cathode is electrically connected to the M-th switch,
And an anode of the first optical semiconductor light emitting device of the Nth group is electrically connected to the (N-1) th switch, and a cathode is electrically connected to the ground. 18. The method of claim 17,
And the switches of the switching unit electrically connect the groups to drive while continuously adding the optical semiconductor light emitting devices of the first group, the second group, and the K-th group during the half period of the full-wave rectified voltage. 18. The method of claim 17,
And the switches of the switching unit electrically connect the groups to sequentially drive the optical semiconductor light emitting devices of the first group, the second group, and the K-th group during the half period of the full-wave rectified voltage. 20. The method of claim 19,
K (K is a natural number from 1 to N-1) and the (K + 1) th group further include a resistance that increases as K increases, thereby lowering the corresponding voltage to emit the optical semiconductor. Optical semiconductor lighting device, characterized in that applied to the device groups.

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