TWI418649B - Chemical vapor deposition system - Google Patents
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本發明涉及表面沈積薄膜技術，特別涉及用於表面沈積薄膜之化學氣相沈積系統。This invention relates to surface deposited thin film technology, and more particularly to chemical vapor deposition systems for surface deposited thin films.
化學氣相沈積(Chemical Vapor Deposition,簡稱CVD)係反應物質於氣態條件下發生化學反應，生成固態物質沈積於加熱之固態基底表面，進而製得固體材料之工藝技術。詳細請參閱Pulpytel,J.等人於2005年4月發表之Dendritic Platinum Aggregates Produced in the Plasma Assisted Chemical Vapor Deposition of Tin Oxide Thin Films，Volume33,Issued 10,Page(s):244-245。Chemical Vapor Deposition (CVD) is a process in which a reaction substance is chemically reacted under a gaseous condition to form a solid material deposited on the surface of a heated solid substrate to produce a solid material. For more details, see Dendritic Platinum Aggregates Produced in the Plasma Assisted Chemical Vapor Deposition of Tin Oxide Thin Films, Volume 33, Issued 10, Page(s): 244-245, published by Pulpytel, J., et al., April 2005.
化學氣相沈積系統於化學氣相沈積製程中起著重要作用，它直接影響著沈積薄膜之均勻性與純度，薄膜顆粒大小一致性以及沈積薄膜速率等。現有之化學氣相沈積系統主要包括常壓化學氣相沈積(Atmospheric Pressure CVD,簡稱APCVD)系統、低壓化學氣相沈積(Low-Pressure CVD,簡稱LPCVD)系統與電漿輔助化學氣相沈積(Plasma Enhanced CVD，簡稱PECVD)系統。The chemical vapor deposition system plays an important role in the chemical vapor deposition process, which directly affects the uniformity and purity of the deposited film, the uniformity of the film size, and the rate of the deposited film. The existing chemical vapor deposition systems mainly include Atmospheric Pressure CVD (APCVD) system, Low-Pressure CVD (LPCVD) system and plasma-assisted chemical vapor deposition (Plasma). Enhanced CVD (PECVD) system.
其中，常壓化學氣相沈積系統係於常壓環境下進行薄膜沈積，其反應器結構簡單，反應速率快。惟，於大氣壓狀況下，氣體分子彼此碰撞機率很高，因此極易發生氣相反應，使得所沈積之薄膜包含微粒，造成微粒污染。Among them, the atmospheric pressure chemical vapor deposition system is used for film deposition under normal pressure environment, and the reactor has a simple structure and a fast reaction rate. However, under atmospheric conditions, the gas molecules collide with each other at a high probability, so that a gas phase reaction is highly likely to occur, so that the deposited film contains particles, causing particle contamination.
低壓化學氣相沈積系統係於低壓環境下進行薄膜沈積，其反應器內壓力降低，可減少不必要之氣相反應，減少微粒產生以增加薄膜沈積均勻性。然而，低壓化學氣相沈積需較高反應溫度，且其反應速率慢。The low-pressure chemical vapor deposition system performs thin film deposition in a low-pressure environment, and the pressure in the reactor is lowered, which reduces unnecessary gas phase reaction and reduces particle generation to increase film deposition uniformity. However, low pressure chemical vapor deposition requires a higher reaction temperature and a slower reaction rate.
電漿輔助化學氣相沈積系統利用電漿增加前驅物之反應速率，可於低溫環境下成長。電漿中之反應物係化學活性較高之離子或自由基，且基底表面受到離子之撞擊亦會使得化學活性提高，該兩因素可促進基底表面之化學反應速率，因此可於較低溫度即可沈積薄膜。然而，其反應機制複雜，較難控制，容易產生化學污染與微粒污染。The plasma-assisted chemical vapor deposition system uses plasma to increase the reaction rate of the precursor and can grow in a low temperature environment. The reactants in the plasma are highly chemically active ions or free radicals, and the impact of ions on the surface of the substrate also increases the chemical activity. These two factors promote the rate of chemical reaction on the surface of the substrate, so that it can be at a lower temperature. A film can be deposited. However, its reaction mechanism is complex, difficult to control, and prone to chemical pollution and particulate contamination.
有鑑於此，提供一種薄膜沈積均勻、反應速率快，可減少化學污染與微粒污染，且不需過高反應溫度之化學氣相沈積系統實屬必要。In view of this, it is necessary to provide a chemical vapor deposition system which has uniform film deposition, fast reaction rate, can reduce chemical pollution and particulate pollution, and does not require excessive reaction temperature.
下面將以具體實施例說明一種化學氣相沈積系統。A chemical vapor deposition system will now be described in the context of a specific embodiment.
一種化學氣相沈積系統，其包括進氣裝置、抽氣裝置以及連接於進氣裝置與抽氣裝置之間之反應器，該反應器內設置有用於放置基底之載具，該反應器內位於進氣裝置與抽氣裝置之間設置複數隔板，每一隔板均具有至少一通孔，相鄰兩隔板間之通孔相互錯開。A chemical vapor deposition system comprising an air intake device, an air suction device, and a reactor connected between the air intake device and the air suction device, wherein the reactor is provided with a carrier for placing the substrate, and the reactor is located inside A plurality of partitions are disposed between the air intake device and the air extracting device, and each of the partition plates has at least one through hole, and the through holes between the adjacent two partition plates are offset from each other.
一種化學氣相沈積系統，其包括進氣裝置、抽氣裝置以及連接於進氣裝置與抽氣裝置之間之反應器，該反應器內設置有用於放置基底之載具，該反應器內位於進氣裝置與抽氣裝置之間設置複數隔板，該複數隔板將反應器內之腔體分隔成複數空間，每相鄰兩空間定義出至少一通孔，每一空間相對兩端之通孔彼此錯開。A chemical vapor deposition system comprising an air intake device, an air suction device, and a reactor connected between the air intake device and the air suction device, wherein the reactor is provided with a carrier for placing the substrate, and the reactor is located inside A plurality of partition plates are disposed between the air intake device and the air suction device, and the plurality of partition plates divide the cavity in the reactor into a plurality of spaces, and at least one through hole is defined for each adjacent two spaces, and the through holes of the opposite ends of each space Staggered from each other.
相較於先前技術，本技術方案之化學氣相沈積系統中，該反應器內位於進氣裝置與抽氣裝置之間設置複數隔板，每一隔板均具有至少一通孔，相鄰兩隔板間之通孔相互錯開，從而，用於薄膜沈積之混合氣體可於該複數隔板引導下，依次通過每一隔板之通孔以及隔板之間之空間到達放置於待薄膜沈積基底，該複數隔板之設計可藉由控制隔板間距、隔板數量、隔板溫度以及載具溫度等參數使混合氣體濃度更均勻，混合氣體中之氣化前驅物裂解更充分以減少副產物產生，並減少氣相反應，從而可於較低溫度形成薄膜沈積，反應速率快，且可有效減少由副產物引起之微粒污染與化學污染。Compared with the prior art, in the chemical vapor deposition system of the present technical solution, a plurality of separators are disposed in the reactor between the air intake device and the air suction device, and each of the partition plates has at least one through hole and two adjacent holes. The through holes between the plates are staggered from each other, so that the mixed gas for film deposition can be guided by the plurality of separators, sequentially pass through the space between the through holes of each of the partitions and the space between the separators, and placed on the substrate to be deposited on the film. The design of the plurality of separators can make the concentration of the mixed gas more uniform by controlling the spacing of the separators, the number of separators, the temperature of the separators, and the temperature of the carrier, and the gasification precursors in the mixed gas are more fully cleaved to reduce by-product generation. And reducing the gas phase reaction, thereby forming film deposition at a lower temperature, the reaction rate is fast, and the particle pollution and chemical pollution caused by by-products can be effectively reduced.
下面將結合附圖與複數實施例對本技術方案之化學氣相沈積系統作進一步詳細說明。The chemical vapor deposition system of the present technical solution will be further described in detail below with reference to the accompanying drawings and the embodiments.
請參閱圖1，本技術方案第一實施例提供之化學氣相沈積系統100，包括進氣裝置10、抽氣裝置20以及連接於進氣裝置10與抽氣裝置20之間之反應器30。Referring to FIG. 1 , a chemical vapor deposition system 100 according to a first embodiment of the present technology includes an air intake device 10 , an air extracting device 20 , and a reactor 30 connected between the air intake device 10 and the air extracting device 20 .
該進氣裝置10與反應器30一端連接，以可為反應器30提供反應氣體。進氣裝置10包括第一進氣管道11、第二進氣管道12、氣體混合腔13以及主進氣管道14。The intake device 10 is coupled to one end of the reactor 30 to provide a reactive gas to the reactor 30. The intake device 10 includes a first intake duct 11, a second intake duct 12, a gas mixing chamber 13, and a main intake duct 14.
第一進氣管道11與氣體混合腔13相連通，用於將氣化前驅物輸送至氣體混合腔13。第二進氣管道12亦與氣體混合腔13相連通，用於將輔助性氣體輸送至氣體混合腔13。該輔助性氣體可為氬氣、氮氣等惰性保護氣體，亦可為氧化性氣體(如氧氣)或還原性氣體(如氫氣)。該氣化前驅物與輔助性氣體之類別可根據沈積薄膜要求而定。並且，該氣化前驅物與輔助性氣體之濃度與流速等參數亦可根據具體薄膜而定。The first intake duct 11 is in communication with the gas mixing chamber 13 for conveying the vaporized precursor to the gas mixing chamber 13. The second intake duct 12 is also in communication with the gas mixing chamber 13 for conveying the auxiliary gas to the gas mixing chamber 13. The auxiliary gas may be an inert protective gas such as argon gas or nitrogen gas, or an oxidizing gas such as oxygen or a reducing gas such as hydrogen. The type of gasification precursor and auxiliary gas can be determined according to the requirements of the deposited film. Moreover, the parameters such as the concentration and flow rate of the gasification precursor and the auxiliary gas may also be determined according to a specific film.
氣體混合腔13用於混合來自第一進氣管道11與第二進氣管道12之氣體，以使氣化前驅物與輔助性氣體混合均勻。氣體混合腔13與主進氣管道14相連通，以將混合後之混合氣體經由主進氣管道14輸送至反應器30。The gas mixing chamber 13 is for mixing the gases from the first intake duct 11 and the second intake duct 12 to uniformly mix the vaporized precursor with the auxiliary gas. The gas mixing chamber 13 is in communication with the main intake duct 14 to deliver the mixed mixed gas to the reactor 30 via the main intake duct 14.
該抽氣裝置20與反應器30另一端連接，以可將反應後之氣體抽取掉，排出反應器30，使後續薄膜沈積能繼續進行。優選地，抽氣裝置20與進氣裝置10內氣體之流速一致，以使反應器30內之氣體維持恒定氣壓與流速。The aspirator 20 is coupled to the other end of the reactor 30 to extract the reacted gas and exit the reactor 30 to allow subsequent film deposition to continue. Preferably, the aspirator 20 is aligned with the flow rate of gas within the intake device 10 to maintain a constant gas pressure and flow rate of the gas within the reactor 30.
該反應器30內設置有用於放置基底之載具311。本實施例中，該反應器30為圓柱狀空腔體，反應器30具有相對之頂壁31、底壁32以及連接該頂壁31與底壁32之側壁33。本實施例中，該頂壁31與底壁32平行。頂壁31開設有用於與主進氣管道14相連通之通孔301。底壁32開設有用於與抽氣裝置20相連通之通孔302。載具311設置於底壁32。載具311用於承載待沈積薄膜之基底。A carrier 311 for placing a substrate is disposed in the reactor 30. In this embodiment, the reactor 30 is a cylindrical cavity, and the reactor 30 has a top wall 31, a bottom wall 32, and side walls 33 connecting the top wall 31 and the bottom wall 32. In this embodiment, the top wall 31 is parallel to the bottom wall 32. The top wall 31 is provided with a through hole 301 for communicating with the main intake duct 14. The bottom wall 32 is provided with a through hole 302 for communicating with the air extracting device 20. The carrier 311 is disposed on the bottom wall 32. The carrier 311 is used to carry a substrate on which a film to be deposited is carried.
反應器30內位於進氣裝置10與抽氣裝置20之間設置複數隔板34。隔板34平行於反應器30之頂壁31。每一隔板34均具有通孔35，且相鄰兩隔板34之間之通孔35相互錯開。本實施例中，該反應器30之側壁33定義出相對之第一側壁331與第二側壁332。該複數隔板34定義為相對之第一隔板341與第二隔板342，其中，該第一隔板341與第二隔板342間隔設置。該第一隔板341與第二隔板342將反應器30內之腔體分隔出複數空間303。優選地，該第一隔板341與第二隔板342彼此平行，且第一隔板341與第二隔板342之表面為平面。A plurality of partitions 34 are disposed in the reactor 30 between the intake device 10 and the air extracting device 20. The separator 34 is parallel to the top wall 31 of the reactor 30. Each of the partitions 34 has a through hole 35, and the through holes 35 between the adjacent two partitions 34 are offset from each other. In this embodiment, the side wall 33 of the reactor 30 defines a first side wall 331 and a second side wall 332 opposite to each other. The plurality of partitions 34 are defined as opposed to the first partition 341 and the second partition 342, wherein the first partition 341 is spaced apart from the second partition 342. The first separator 341 and the second separator 342 separate the cavity in the reactor 30 from the plurality of spaces 303. Preferably, the first partition 341 and the second partition 342 are parallel to each other, and the surfaces of the first partition 341 and the second partition 342 are flat.
每一第一隔板341具有第一通孔343。該第一通孔343設於第一隔板341與第一側壁331之間。每一第二隔板342具有第二通孔344。該第二通孔344設於第二隔板342與第二側壁332之間。並且，彼此相鄰之第一隔板341與第二隔板342之第一通孔343與第二通孔344相互錯開，且無重疊部分。優選地，各第一隔板341之第一通孔343之開設位置與大小均相同，各第一通孔343於垂直於頂壁31方向上之投影重疊。相應地，各第二隔板342之第二通孔344開設位置與大小均相同，各第二通孔344於垂直於頂壁31方向上之投影亦重疊。該第一通孔343與第二通孔344形狀並不限定，其截面可為月牙形、長方形、圓形等。Each of the first partitions 341 has a first through hole 343. The first through hole 343 is disposed between the first partition 341 and the first sidewall 331 . Each of the second partitions 342 has a second through hole 344. The second through hole 344 is disposed between the second partition 342 and the second sidewall 332. Moreover, the first through holes 343 and the second through holes 344 of the first spacer 341 and the second spacer 342 adjacent to each other are shifted from each other without overlapping portions. Preferably, the first through holes 343 of each of the first partitions 341 are located at the same position and size, and the projections of the first through holes 343 in the direction perpendicular to the top wall 31 overlap. Correspondingly, the second through holes 344 of each of the second partitions 342 are disposed at the same position and size, and the projections of the second through holes 344 in the direction perpendicular to the top wall 31 also overlap. The shape of the first through hole 343 and the second through hole 344 is not limited, and the cross section thereof may be a crescent shape, a rectangular shape, a circular shape, or the like.
因此，經由主進氣管道14進入到反應器30之混合氣體可於複數隔板34導引下，依序流過第一隔板341之第一通孔343、第一隔板341與第二隔板342之間之空間303、第二隔板342之第二通孔344、第二隔板342與第二個第一隔板341之間之空間303、第二個第一隔板341之第一通孔343，重複之，直至混合氣體到達承載於載具311基底表面。反應器30內為真空環境，反應器30內之混合氣體於各隔板34形成之空間303內流動時可增加混合氣體分子間碰撞，使氣體混合更均勻，其並不與外界氣體接觸，從而減少氣相反應以及由於氣體不純造成之微粒污染。Therefore, the mixed gas entering the reactor 30 via the main intake duct 14 can be guided by the plurality of partitions 34, and sequentially flows through the first through holes 343, the first partitions 341 and the second of the first partitions 341. a space 303 between the partitions 342, a second through hole 344 of the second partition 342, a space 303 between the second partition 342 and the second first partition 341, and a second first partition 341 The first through hole 343 is repeated until the mixed gas reaches the surface of the substrate carried by the carrier 311. The inside of the reactor 30 is a vacuum environment, and when the mixed gas in the reactor 30 flows in the space 303 formed by each of the separators 34, the collision of the mixed gas molecules can be increased, the gas mixing is more uniform, and the gas is not in contact with the outside air, thereby Reduce gas phase reactions and particulate contamination due to gas impureness.
該化學氣相沈積系統100還可進一步包括加熱裝置50。加熱裝置50可分別與載具311及隔板34連接以將載具311與隔板34加熱至預定溫度。加熱裝置50可分別將載具311與隔板34加熱至不同預定溫度。優選地，隔板34之間之溫度可根據薄膜沈積要求控制於80°至150°之間之任一恒定值。從而，複數隔板34均對氣體進行加熱，使得反應器30內之混合氣體自始至終均可保持恒溫，氣體濃度保持一致，使得基底表面之薄膜沈積更加均勻。The chemical vapor deposition system 100 can further include a heating device 50. The heating device 50 can be coupled to the carrier 311 and the separator 34, respectively, to heat the carrier 311 and the separator 34 to a predetermined temperature. The heating device 50 can heat the carrier 311 and the separator 34 to different predetermined temperatures, respectively. Preferably, the temperature between the separators 34 can be controlled to any constant value between 80° and 150° depending on film deposition requirements. Thus, the plurality of separators 34 both heat the gas so that the mixed gas in the reactor 30 can be kept at a constant temperature from the beginning to the end, and the gas concentration is kept uniform, so that the film deposition on the surface of the substrate is more uniform.
由於混合氣體經由主進氣管道14到達待沈積薄膜基底表面過程中，需流經各隔板34間之複數空間303，從而加熱之隔板34可進一步裂解混合氣體中之氣化前驅物，避免該氣化前驅物裂解不充分而產生副產物，影響薄膜沈積品質。Since the mixed gas passes through the main intake duct 14 to reach the surface of the film substrate to be deposited, it needs to flow through the plurality of spaces 303 between the partition plates 34, so that the heated partition plate 34 can further crack the gasification precursor in the mixed gas, thereby avoiding The gasification precursor is insufficiently cracked to produce by-products, which affect the quality of film deposition.
並且，可藉由控制各隔板34之間距或隔板34之數目改變各隔板34間形成之空間303中之混合氣體之飽和度與飽和壓力，從而改變薄膜沈積反應速率與薄膜晶相微結構，以控制該改薄膜沈積品質。例如，可藉由降低各隔板34間距或增加隔板34數量以增加混合氣體飽和度與飽和壓力，從而提高薄膜沈積反應速率。Moreover, the saturation and saturation pressure of the mixed gas in the space 303 formed between the respective separators 34 can be changed by controlling the distance between the separators 34 or the number of the separators 34, thereby changing the deposition rate of the thin film and the crystal phase of the thin film. Structure to control the quality of the deposited film. For example, the film deposition reaction rate can be increased by reducing the spacing of the separators 34 or increasing the number of separators 34 to increase the saturation of the mixed gas and the saturation pressure.
該化學氣相沈積系統100結構簡單，藉由控制隔板34間距、隔板34數量、隔板34溫度以及基底溫度，即可控制薄膜沈積均勻性與反應速率以得到所需薄膜沈積厚度與品質要求。The chemical vapor deposition system 100 has a simple structure, and by controlling the spacing of the separators 34, the number of separators 34, the temperature of the separators 34, and the substrate temperature, the film deposition uniformity and reaction rate can be controlled to obtain the desired film deposition thickness and quality. Claim.
請參閱圖2，本技術方案第二實施例中之化學氣相沈積系統200與第一實施例中之化學氣相沈積系統100大致相同，其不同之處在於，該複數隔板234表面呈波浪形，混合氣體可沿具有波浪表面之兩相鄰隔板234形成之空間236流動，從而混合氣體可更好地與隔板234接觸，使混合氣體濃度更均勻，混合氣體之氣化前驅物裂解更充分。Referring to FIG. 2, the chemical vapor deposition system 200 in the second embodiment of the present technical solution is substantially the same as the chemical vapor deposition system 100 in the first embodiment, except that the surface of the plurality of separators 234 is wave-shaped. The mixed gas can flow along the space 236 formed by two adjacent partitions 234 having a wavy surface, so that the mixed gas can be better contacted with the partition 234 to make the mixed gas concentration more uniform, and the gasification precursor of the mixed gas is cracked. More fully.
請參閱圖3，本技術方案第三實施例中之化學氣相沈積系統300與第一實施例中之化學氣相沈積系統100大致相同，其不同之處在於，該複數隔板334表面具有複數微凸起336。同理，混合氣體可沿具有微凸起336之兩相鄰隔板334形成之空間流動，從而混合氣體可更好地與隔板334接觸，使混合氣體濃度更均勻，混合氣體之氣化前驅物裂解更充分。Referring to FIG. 3, the chemical vapor deposition system 300 in the third embodiment of the present technical solution is substantially the same as the chemical vapor deposition system 100 in the first embodiment, except that the surface of the plurality of separators 334 has a plurality of surfaces. Microprotrusions 336. Similarly, the mixed gas can flow along the space formed by two adjacent partitions 334 having the micro-protrusions 336, so that the mixed gas can be better contacted with the separator 334 to make the mixed gas concentration more uniform, and the gasification precursor of the mixed gas. The material is more fully cleaved.
請參閱圖4，本技術方案第四實施例中之化學氣相沈積系統400與第一實施例中之化學氣相沈積系統100大致相同，其不同之處在於，該複數隔板434與反應器430之頂壁431夾角θ為銳角。該複數隔板434之設計可便於混合氣體於兩相鄰隔板434形成之空間403內流動，控制薄膜沈積反應速率。優選地，該複數隔板434與頂壁431之夾角θ為10°~45°之間任一角度，以使隔板434間氣體流動與混合更充分。Referring to FIG. 4, the chemical vapor deposition system 400 in the fourth embodiment of the present technical solution is substantially the same as the chemical vapor deposition system 100 in the first embodiment, except that the plurality of separators 434 and the reactor are different. The angle θ of the top wall 431 of 430 is an acute angle. The plurality of spacers 434 are designed to facilitate the flow of the mixed gas in the space 403 formed by the two adjacent spacers 434 to control the film deposition reaction rate. Preferably, the angle θ between the plurality of partitions 434 and the top wall 431 is any angle between 10° and 45° to make the gas flow and mixing between the partitions 434 more sufficient.
請參閱圖5，本技術方案第五實施例中之化學氣相沈積系統500與第一實施例中之化學氣相沈積系統100大致相同，其不同之處在於，該每一隔板534內開設至少一通孔535，相鄰兩隔板534之通孔535互相錯開，即相鄰兩隔板534之通孔535互不重疊。且，該通孔535並不限於開設於隔板534與側壁533相連接處，其可開設於隔板534內任何位置。從而，混合氣體可經由該隔板534之至少一通孔535從該層之空間503依次流動至其下一層空間503，直至其與基底表面接觸反應沈積形成薄膜。Referring to FIG. 5, the chemical vapor deposition system 500 in the fifth embodiment of the present technical solution is substantially the same as the chemical vapor deposition system 100 in the first embodiment, except that each of the spacers 534 is opened. The through holes 535 of the adjacent two partitions 534 are offset from each other, that is, the through holes 535 of the adjacent two partitions 534 do not overlap each other. Moreover, the through hole 535 is not limited to being opened at the junction of the partition 534 and the side wall 533, and can be opened at any position within the partition 534. Thereby, the mixed gas can flow from the space 503 of the layer to the space 503 of the next layer through the at least one through hole 535 of the separator 534 until it is in contact with the surface of the substrate to form a film.
此外，化學氣相沈積系統之反應器並不限於圓柱形空腔體，其可為截面為橢圓形、多邊形等各種形狀之空腔體。Further, the reactor of the chemical vapor deposition system is not limited to a cylindrical cavity, and may be a hollow body having various shapes such as an elliptical shape or a polygonal shape.
相較於先前技術，本技術方案之化學氣相沈積系統中，該反應器內位於進氣裝置與抽氣裝置之間設置複數隔板，每一隔板均具有至少一通孔，相鄰兩隔板間之通孔相互錯開，從而，用於薄膜沈積之混合氣體可於該複數隔板引導下，依次通過每一隔板之通孔以及隔板之間之空間到達放置於待薄膜沈積基底，該複數隔板之設計可藉由控制隔板間距、隔板數量、隔板溫度以及載具溫度等參數使混合氣體濃度更均勻，混合氣體中之氣化前驅物裂解更充分以減少副產物產生，並減少氣相反應，從而可於較低溫度下形成薄膜沈積，反應速率快，且可有效減少由副產物引起之微粒污染與化學污染。Compared with the prior art, in the chemical vapor deposition system of the present technical solution, a plurality of separators are disposed in the reactor between the air intake device and the air suction device, and each of the partition plates has at least one through hole and two adjacent holes. The through holes between the plates are staggered from each other, so that the mixed gas for film deposition can be guided by the plurality of separators, sequentially pass through the space between the through holes of each of the partitions and the space between the separators, and placed on the substrate to be deposited on the film. The design of the plurality of separators can make the concentration of the mixed gas more uniform by controlling the spacing of the separators, the number of separators, the temperature of the separators, and the temperature of the carrier, and the gasification precursors in the mixed gas are more fully cleaved to reduce by-product generation. And reducing the gas phase reaction, thereby forming film deposition at a lower temperature, the reaction rate is fast, and the particle pollution and chemical pollution caused by by-products can be effectively reduced.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施方式，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
100、200、300、400、500．．．化學氣相沈積系統100, 200, 300, 400, 500. . . Chemical vapor deposition system
10．．．進氣裝置10. . . Intake device
20．．．抽氣裝置20. . . Air suction device
30、430．．．反應器30,430. . . reactor
11．．．第一進氣管道11. . . First intake duct
12．．．第二進氣管道12. . . Second intake duct
13．．．氣體混合腔13. . . Gas mixing chamber
14．．．主進氣管道14. . . Main intake duct
311．．．載具311. . . vehicle
31、431．．．頂壁31,431. . . Top wall
32．．．底壁32. . . Bottom wall
33、533．．．側壁33,533. . . Side wall
301、302．．．通孔301, 302. . . Through hole
34、234、334、434、534．．．隔板34, 234, 334, 434, 534. . . Partition
35、535．．．通孔35,535. . . Through hole
331．．．第一側壁331. . . First side wall
332．．．第二側壁332. . . Second side wall
341．．．第一隔板341. . . First partition
342．．．第二隔板342. . . Second partition
303、236、403、503．．．空間303, 236, 403, 503. . . space
343．．．第一通孔343. . . First through hole
344．．．第二通孔344. . . Second through hole
50．．．加熱裝置50. . . heating equipment
336．．．微凸起336. . . Micro bump
圖1係本技術方案第一實施例提供之化學氣相沈積系統示意圖。FIG. 1 is a schematic diagram of a chemical vapor deposition system provided by a first embodiment of the present technical solution.
圖2係本技術方案第二實施例提供之化學氣相沈積系統示意圖。2 is a schematic diagram of a chemical vapor deposition system provided by a second embodiment of the present technical solution.
圖3係本技術方案第三實施例提供之化學氣相沈積系統示意圖。FIG. 3 is a schematic diagram of a chemical vapor deposition system provided by a third embodiment of the present technical solution.
圖4係本技術方案第四實施例提供之化學氣相沈積系統示意圖。4 is a schematic diagram of a chemical vapor deposition system provided by a fourth embodiment of the present technical solution.
圖5係本技術方案第五實施例提供之化學氣相沈積系統示意圖。FIG. 5 is a schematic diagram of a chemical vapor deposition system provided by a fifth embodiment of the present technical solution.
100．．．化學氣相沈積系統100. . . Chemical vapor deposition system
10．．．進氣裝置10. . . Intake device
20．．．抽氣裝置20. . . Air suction device
30．．．反應器30. . . reactor
11．．．第一進氣管道11. . . First intake duct
12．．．第二進氣管道12. . . Second intake duct
13．．．氣體混合腔13. . . Gas mixing chamber
14．．．主進氣管道14. . . Main intake duct
311．．．載具311. . . vehicle
31．．．頂壁31. . . Top wall
32．．．底壁32. . . Bottom wall
33．．．側壁33. . . Side wall
301、302．．．通孔301, 302. . . Through hole
34．．．隔板34. . . Partition
35．．．通孔35. . . Through hole
331．．．第一側壁331. . . First side wall
332．．．第二側壁332. . . Second side wall
341．．．第一隔板341. . . First partition
342．．．第二隔板342. . . Second partition
303．．．空間303. . . space
343．．．第一通孔343. . . First through hole
344．．．第二通孔344. . . Second through hole
50．．．加熱裝置50. . . heating equipment
Claims (10)
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| TW98101636A TWI418649B (en) | 2009-01-16 | 2009-01-16 | Chemical vapor deposition system |
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| TW98101636A TWI418649B (en) | 2009-01-16 | 2009-01-16 | Chemical vapor deposition system |
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| CN106544639B (en) * | 2015-09-21 | 2019-03-05 | 中微半导体设备(上海)有限公司 | It prevents the gas extraction arrangement of blocking and the MOCVD device of the device is set |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09115896A (en) * | 1995-10-13 | 1997-05-02 | Rohm Co Ltd | Cvd system |
| JP2008283198A (en) * | 1998-02-26 | 2008-11-20 | Canon Anelva Corp | Plasma processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09115896A (en) * | 1995-10-13 | 1997-05-02 | Rohm Co Ltd | Cvd system |
| JP2008283198A (en) * | 1998-02-26 | 2008-11-20 | Canon Anelva Corp | Plasma processing device |
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