CN220450288U

CN220450288U - Film processing apparatus

Info

Publication number: CN220450288U
Application number: CN202321284712.1U
Authority: CN
Inventors: 黄成龙; 高东均; 金友鎭; 黄美子
Original assignee: Samsung Display Co Ltd
Current assignee: Samsung Display Co Ltd
Priority date: 2022-05-27
Filing date: 2023-05-25
Publication date: 2024-02-06
Anticipated expiration: 2033-05-25
Also published as: KR20230165965A

Abstract

A thin film processing apparatus is provided. The thin film processing device includes: a base for placing the substrate; the spray head is used as a spray head opposite to the base and comprises a first plate, a second plate and edge side walls; and an inner wall disposed between the susceptor and the showerhead and defining a reaction space in which the substrate is disposed together with the susceptor and the showerhead, wherein the first plate includes: an inner passage crossing a thickness direction of the first plate; an injection hole penetrating from the inner passage to a surface of the first plate in a first direction; and an exhaust hole penetrating through one surface and the other surface of the first plate in the first direction, wherein the edge sidewall defines an exhaust space that is a space between the other surface of the first plate and one surface of the second plate, the edge sidewall being disposed between the first plate and the second plate, and including a through hole penetrating through the edge sidewall in a second direction crossing the first direction.

Description

Film processing apparatus

Technical Field

The present utility model relates to a thin film processing apparatus.

Background

With the development of multimedia, the importance of display devices is increasing. For this reason, various display devices such as a liquid crystal display device (LCD: liquid Crystal Display), an organic light emitting display device (OLED: organic Light Emitting Display), and the like are being used.

A liquid crystal display device among display devices is one of the most widely used flat panel display devices, and is configured by using two substrates on which electric field generating electrodes such as pixel electrodes and common electrodes are formed and a liquid crystal layer interposed therebetween, and applying a voltage to the electric field generating electrodes to generate an electric field in the liquid crystal layer, thereby determining the orientation of liquid crystal molecules of the liquid crystal layer, and controlling polarization of incident light, thereby displaying an image.

In addition, among the display devices, the organic light emitting display device displays an image using an organic light emitting diode (Organic Light Emitting Diode) that generates light by recombination of electrons and holes. Such an organic light emitting display device has advantages of high response speed, high brightness, and wide viewing angle, and simultaneously has advantages of being driven with lower power consumption.

As a method for manufacturing such a display device, a Chemical Vapor Deposition (CVD) method is widely used.

Disclosure of Invention

The utility model aims to solve the technical problem of providing a thin film treatment device for shortening the purging time.

The technical problems to be solved by the present utility model are not limited to the above technical problems, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

A thin film processing apparatus according to an embodiment for solving the above-described technical problems includes: a base for placing the substrate; the spray head is used as a spray head opposite to the base and comprises a first plate, a second plate and edge side walls; and an inner wall disposed between the susceptor and the showerhead and defining a reaction space in which the substrate is disposed together with the susceptor and the showerhead, wherein the first plate includes: an inner passage crossing a thickness direction of the first plate; an injection hole penetrating from the inner passage to a surface of the first plate in a first direction; and a vent hole penetrating through the one surface and the other surface of the first plate in the first direction, wherein the edge sidewall defines a vent space that is a space between the other surface of the first plate and one surface of the second plate, the edge sidewall being disposed between the first plate and the second plate, and including a through hole penetrating through the edge sidewall in a second direction crossing the first direction.

The vent hole may spatially connect the reaction space with the vent space.

The ratio of the total area of the injection hole to the total area of the exhaust hole is 1:0.5 to 1:20.

The region of the exhaust space that meets the second plate may be covered by the second plate such that the exhaust space is spatially separated from a space located in an opposite direction of the exhaust space with the second plate interposed therebetween.

The thin film processing apparatus may further include: and a gas inflow part supplying gas to the showerhead, wherein the gas inflow part may include an inflow pipe connected to the internal passage, and the inflow pipe may be spatially separated from the exhaust space.

The second plate may include an inflow hole penetrating the second plate in a thickness direction, and the inflow pipe may be connected to the internal passage through the inflow hole.

The inner wall may be disposed on a surface of the base or a surface of the showerhead.

The inner wall may integrally cover a side surface of the reaction space in the second direction such that a space of the reaction space in an opposite direction to the reaction space spatially separates the inner wall with the inner wall interposed therebetween.

The inner wall may be disposed to be spaced apart from the injection hole and the exhaust hole.

The thickness of the inner wall measured in the second direction may be greater than the thickness of the edge sidewall measured in the second direction in the cross-sectional view.

The thin film processing apparatus may further include: and a power supply part applying a Radio Frequency (RF) power to the second board, wherein the Radio Frequency (RF) power applied to the second board may be transferred to the first board through the edge sidewall.

The first plate may further include a sub-internal passage and a sub-injection hole, which may be spatially separated from the internal passage, the injection hole, and the exhaust hole.

The sub-internal passage may be arranged spaced apart from the internal passage in the first direction.

The sub injection holes may be arranged to be spaced apart from the injection holes in the second direction.

The total area of the exhaust holes may be greater than the total area of the injection holes or the total area of the sub-injection holes.

A thin film processing apparatus according to another embodiment for solving the above-described technical problem includes: a gas inlet through which a gas flows from the outside; a first plate as a first plate including an inner passage spatially connected to the gas inflow port and an injection hole penetrating a surface of the inner passage, including an exhaust hole spaced apart from the inner passage and penetrating the first plate; a reaction space spatially connected to the internal passage through the injection hole; and an exhaust space spatially connected with the reaction space through the exhaust hole and disposed in an opposite direction of the reaction space to place the first plate between the exhaust space and the reaction space, wherein the exhaust space is defined by the first plate, an edge sidewall disposed on the other surface of the first plate, and a second plate opposing the other surface of the first plate to place the edge sidewall therebetween, the edge sidewall including a through hole penetrating the edge sidewall, the exhaust hole being spatially connected with the through hole.

The gas flowing in through the gas inflow port may move to the inner passage, and the gas flowing in the inner passage may move to the reaction space through the injection hole.

The gas flowing into the reaction space may move to the exhaust space through the exhaust hole, and the gas flowing into the exhaust space may be exhausted from the exhaust space through the through hole included in the edge sidewall.

The gas may be a mixture of a source gas G1 and a reaction gas G2.

After RF power is applied to the second plate, a purge gas G3 may flow into the gas inflow port.

Specific matters of other embodiments are included in the detailed description and drawings.

According to the thin film processing device of the embodiment, the exhaust hole penetrating towards the upper part can be arranged in the spray head, so that the purging time is shortened.

Effects according to the embodiments are not limited to those illustrated by the above examples, and a wide variety of effects are included in the present specification.

Drawings

Fig. 1 is a partial perspective view of a thin film processing apparatus according to an embodiment.

Fig. 2 is a schematic cross-sectional view of a thin film processing apparatus according to an embodiment.

Fig. 3 is a bottom perspective view of a facing plate of a spray head according to an embodiment.

Fig. 4 is a perspective view illustrating separation of the internal passage from fig. 3.

Fig. 5 is a timing chart for explaining a thin film deposition method using the thin film processing apparatus according to an embodiment.

Fig. 6 to 9 are gas flow charts per step of a thin film deposition method using the thin film processing apparatus according to an embodiment.

Fig. 10 is a timing chart for explaining another thin film deposition method using the thin film processing apparatus according to an embodiment.

Fig. 11 and 12 are gas flow charts at each step of another thin film deposition method using the thin film processing apparatus according to an embodiment.

Fig. 13 is a schematic cross-sectional view of a thin film processing apparatus according to another embodiment.

Fig. 14 and 15 are timing charts for explaining a thin film deposition method using the thin film processing apparatus according to another embodiment.

FIG. 16 is a gas flow diagram of a thin film processing apparatus according to another embodiment.

Reference numerals illustrate:

100: spray head 140: gas inflow portion

TN: internal channel DH: injection hole

EH: exhaust hole 130: edge side wall

MH: through hole ES: exhaust space

IW: inner wall 200: base seat

300: power supply unit

DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION

The advantages and features of the present utility model, as well as the methods of attaining them, will become apparent with reference to the drawings and detailed description of embodiments. However, the present utility model may take various forms different from each other, and is not limited to the embodiments disclosed below, which are provided only for completely disclosing the present utility model and for completely informing a person having ordinary skill in the art of the present utility model of the scope of the present utility model, the present utility model being defined only by the scope of the claims.

References to an element or layer being "on" another element or layer include the case where the other element or layer is immediately above the other element or intervening layers or layers are present. Like reference numerals refer to like elements throughout the specification. The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for illustrating the embodiments are exemplary, and thus the present utility model is not limited to the matters of illustration.

Although first, second, etc. are used to describe various elements, these elements are not limited to these terms, as should be apparent. These terms are only used to distinguish one element from another. Therefore, the first component mentioned below may be the second component within the technical idea of the present utility model.

Hereinafter, specific embodiments will be described with reference to the drawings.

Fig. 1 is a partial perspective view of a thin film processing apparatus according to an embodiment. Fig. 2 is a schematic cross-sectional view of a thin film processing apparatus according to an embodiment.

In the drawings, a first direction X, a second direction Y, and a third direction Z are defined. The first direction X, the second direction Y, and the third direction Z are directions perpendicular to each other and intersecting each other, respectively. The third direction Z corresponds to the thickness direction of the head 100 as the up-down direction in the drawing. The plane defined by the first direction X and the second direction Y is referred to as an XY plane.

The thin film processing apparatus 10 according to an embodiment is an apparatus for performing processes such as thin film formation, thin film patterning, and the like in manufacturing a display device or a semiconductor element or the like. For example, the thin film processing apparatus may be a deposition apparatus or an etching apparatus as an apparatus including the showerhead 100. For example, the deposition apparatus may be a chemical vapor deposition apparatus (CVD: chemical Vaper Deposition), a metal organic chemical vapor deposition apparatus (MOCVD: metal Organic CVD), a plasma chemical vapor deposition apparatus (PECVD: plasma Enhanced CVD), a Thermal chemical vapor deposition apparatus (Thermal CVD), an atmospheric pressure chemical vapor deposition apparatus (Atmospherepressure CVD), a Low pressure chemical vapor deposition apparatus (Low pressure CVD), an atomic layer deposition apparatus (ALD: atomic Layer Deposition), or the like. The etching apparatus may be a reactive ion etching (RIE: reacitve Ion Etch) apparatus, a reactive ion beam etching (RIBE: reacitve Ion Beam Etch) apparatus, a high-density plasma etching (HDPE: high Density Plasma Etch) apparatus, a sputter etching (spin etching) apparatus, or the like. In the following embodiments, the thin film processing apparatus 10 is described by taking an atomic layer deposition apparatus as an example, but the present invention is not limited thereto.

Referring to fig. 1 and 2, the thin film processing apparatus 10 includes a showerhead 100, a susceptor 200, a gas inflow portion 140, and a chamber CB. The chamber CB partitions a predetermined inner space. The chamber CB may include an outer wall OW and a connection portion CON. The outer wall OW may define an inner space of the chamber CB, and the connection portion CON may serve to connect the showerhead 100 and the chamber CB by placing the showerhead 100 on the chamber CB, but is not limited thereto. For example, the chamber CB may not include the separate connection portion CON. The showerhead 100, the susceptor 200, the reaction space RS, etc. may be disposed inside the chamber CB. In one embodiment, the inner space of the chamber CB may maintain a vacuum state. However, it is not limited thereto, and normal pressure may be maintained according to the process, or low pressure lower than normal pressure or high pressure higher than normal pressure may be maintained.

The showerhead 100 includes a back plate 110, a facing plate 120, edge sidewalls 130, and a gas inflow 140. The head 100 and the base 200 are arranged to face each other in the third direction Z. A reaction space RS may be defined between the showerhead 100 and the susceptor 200. In an embodiment, the showerhead 100 may be disposed at an upper portion of the reaction space RS, and the susceptor 200 may be disposed at a lower portion of the reaction space RS, but is not limited thereto.

The susceptor 200 may support a substrate SU as a subject of a process. For example, the substrate SU may be an insulating substrate or a semiconductor substrate used in a display device. In an embodiment, the substrate SU may be a glass substrate for an organic light emitting display device or a flexible polymer substrate made of polyimide or the like. The substrate SU may be a base substrate itself, or may be a substrate having an insulating film or a conductive film formed thereon.

In an embodiment, the susceptor 200 may include or be connected to a temperature adjusting part (not shown) for changing the temperature of the substrate SU. The temperature adjusting means may include a heating means such as a heater or a cooling means such as cooling water. In an embodiment, the temperature regulating means may comprise both heating means and cooling means, and further comprise temperature controlling means.

The inner wall IW may be disposed on a surface of the base 200. The inner wall IW may be disposed to surround a region where the substrate SU is disposed on one surface of the base 200, and a side surface of the base 200 and an outer side surface of the inner wall IW may be disposed on the same plane. In the process step, the inner wall IW may support the showerhead 100 in the case that the showerhead 100 is combined with the base 200. That is, the inner wall IW may function to prevent the showerhead 100 from directly contacting the substrate SU disposed on the pedestal 200. The inner wall IW may be disposed between the showerhead 100 and the base 200 to seal the reaction space RS defined by the showerhead 100, the base 200, and the inner wall IW, but is not limited thereto. For example, reaction space RS may be sealed by base 200, showerhead 100, and inner wall IW, but in some embodiments, there may also be a separate space between inner wall IW and showerhead 100 or between inner wall IW and base 200, so that reaction space RS is not sealed. Although the explanation is made on the premise that the inner wall IW is disposed on one surface of the base 200, it is not limited thereto. For example, the inner wall IW may be disposed on a surface of the showerhead 100 to be coupled with the showerhead 100, and the inner wall IW may be in contact with the susceptor 200 only in the case that the showerhead 100 is coupled with the susceptor 200 in the process step. That is, in the case that the head 100 is spaced apart from the base 200, the inner wall IW may be combined with one of the base 200 or the head 100.

The spray head 100 may be square or rectangular in shape. The facing sides of the spray head 100 may extend in the first direction X, and the other two sides may extend in the second direction Y. In an embodiment, the length L2 in the first direction X and the length L1 in the second direction Y of the showerhead 100 may be 300mm to 4000mm, respectively, but are not limited thereto.

The spray head 100 may include a back plate 110 and an opposing plate 120. The facing plate 120 may be a plate facing the reaction space RS. The back plate 110 may be disposed at an upper portion of the facing plate 120 (on an opposite side of the reaction space RS with respect to the facing plate 120).

The back plate 110 and the facing plate 120 may be arranged to overlap in the third direction Z. The width of the back plate 110 may be greater than the width of the facing plate 120 in a plan view, but is not limited thereto.

The back plate 110 and the facing plate 120 may be spaced apart and facing each other. The back plate 110 and the facing plate 120 may be arranged in parallel with a predetermined interval. The back plate 110 and the facing plate 120 may be disposed in planes parallel to the XY plane, respectively. An edge sidewall 130 for defining the exhaust space ES may be disposed along an edge between the back plate 110 and the facing plate 120. The exhaust space ES may be defined by a lower surface of the back plate 110, an upper surface of the facing plate 120, and the edge sidewall 130.

The back plate 110 may not include a separate penetrating portion except the inflow holes TH through which the gas inflow portion 140 passes. In other words, the side of the exhaust space ES in the third direction Z may be sealed by the back plate 110.

In an embodiment, as shown, the edge sidewall 130 may be disposed between the back plate 110 and the facing plate 120, thereby functioning as a spacer that maintains the separation space of the back plate 110 and the facing plate 120.

In another embodiment, the edge sidewalls 130 may also be disposed around the back plate 110 and the sides facing the plate 120.

The edge sidewall 130 may be coupled with the back plate 110 and the facing plate 120 by a coupling member.

In one embodiment, the edge sidewall 130 may be configured to be independent of the back plate 110 and the components facing the plate 120. However, the edge side wall 130 may be integrated with the back plate 110 or the facing plate 120. For example, in the case where the edge side wall 130 is integrated with the facing plate 120, the facing plate 120 may include a flat bottom and a side wall portion bent from the edge, and the side wall portion of the facing plate 120 may be coupled with the back plate 110 by a coupling member.

The edge sidewall 130 includes a plurality of through holes MH. The through hole MH may be a hole penetrating the rim sidewall 130 in the first direction X. The plurality of through holes MH may be aligned in the first direction X or the second direction Y, but is not limited thereto. For example, the plurality of through holes MH may be irregularly arranged randomly from inside to outside through the edge sidewall 130.

The gas in the exhaust space ES can move through the through-hole MH through the edge sidewall 130. The number of through holes MH included in the edge sidewall 130 may be a number sufficient to discharge the gas of the exhaust space ES to the external space OS. However, in this case, as will be described later, the edge side wall 130 may include only a number of through holes MH sufficient to enable the RF power applied to the back plate 110 by the power supply portion 300 to be transferred to the showerhead 100. The outer space OS may be defined by the outer wall OW and may be connected to the outside by arranging the outer hole OH of the lower portion.

The facing plate 120 may include at least one internal channel TN. The internal channels TN may be arranged at an intermediate region in the thickness direction of the facing plate 120, and may extend in a direction transverse to the thickness direction. The internal channel TN may extend in a direction lying in the XY plane (or a plane parallel thereto). In an exemplary embodiment, a portion of the internal channel TN extends in a first direction X and another portion of the internal channel TN extends in a second direction Y.

The showerhead 100 may be divided into an exhaust space ES and an internal passage TN space along the third direction Z. The exhaust space ES and the internal passage TN of the facing plate 120 may be spatially separated. Therefore, the gas flowing into the internal passage TN through the gas inflow portion 140 and the gas discharged through the gas discharge hole EH may not be mixed with each other.

The facing plate 120 may include an injection hole DH and an exhaust hole EH. The injection holes DH may be gas discharge holes for discharging the gas flowing into the showerhead 100 into the reaction space RS, and the exhaust holes EH may be gas discharge holes for discharging the gas of the reaction space RS into the exhaust space ES. The injection hole DH and the exhaust hole EH may have a shape extending substantially in the third direction Z. The exhaust hole EH and the injection hole DH may be opened at a lower surface of the facing plate 120 facing the reaction space RS, respectively.

The exhaust hole EH may spatially connect the exhaust space ES with the reaction space RS through the upper and lower surfaces of the facing plate 120. The injection holes DH may penetrate between the internal passage TN of the facing plate 120 and the lower surface of the facing plate 120, thereby spatially connecting the internal passage TN of the facing plate 120 with the reaction space RS. Inside the head 100, the exhaust hole EH and the injection hole DH may be spatially separated without being connected to each other.

In one embodiment, the facing plate 120 may be constructed using a single integrated plate. That is, the facing plate 120 may be provided in the form of a single plate without overlapping and bonding or welding a plurality of plates. If the facing plate 120 is formed of one plate, it is possible to have not only strong mechanical characteristics but also a uniform thermal expansion coefficient over the entire facing plate 120, as compared with the case of forming by using a plurality of plates. Therefore, thermal deformation can be minimized, and irregular deformation of the injection holes DH and the like can be prevented, as compared with the case of being formed using a plurality of plates. The description has been made on the premise that the facing plate 120 is formed by an integrated plate, but is not limited thereto. For example, the facing plate 120 may have a structure in which a plurality of constituent members are combined. That is, the facing plate 120 may be a separate type. The internal passage TN, the injection hole DH, and the exhaust hole EH may be formed by drilling a single plate.

The thickness of the facing plate 120 may be 20mm or more or 25mm or more or may be 100mm or less or 80mm or less, and various thicknesses may be selected within the above range, but are not limited thereto.

The back plate 110 and the facing plate 120 may be constructed of aluminum, aluminum alloy, stainless steel (SUS), etc., but are not limited thereto. The back plate 110 and the facing plate 120 may be formed of the same material, but the back plate 110 and the facing plate 120 may be formed of different materials due to the characteristics of the back plate 110 to which power is applied through the power supply portion 300. In addition, a material such as alumina (Al) may be applied to the back plate 110 or the facing plate 120 ₂ O ₃ ) Silicon dioxide (SiO) ₂ ) Yttria (Y) ₂ O ₃ ) Ceramic coatings of aluminum nitride (AlN) and the like.

The gas inflow port penetrates the back plate 110 and is connected to the internal passage TN. The gas inflow port may introduce gas into the internal channel TN facing the plate 120. The gas inlet may include a flow path pipe, and the flow path pipe may be formed of a material that is impermeable to gas so that the gas inside the gas inlet and the gas in the exhaust space ES do not mix with each other.

In one embodiment, the back plate 110 may include at least one inflow hole TH. The inflow holes TH may penetrate the upper and lower surfaces of the back plate 110. The inflow holes TH may be gas inflow holes that allow gas to flow into the showerhead 100 from the outside. That is, the inflow holes TH formed in the back plate 110 may be responsible for inflow of the gas.

The flow path pipe of the gas inflow part 140 may pass through the inflow holes TH and traverse the exhaust space ES between the back plate 110 and the facing plate 120 in the third direction Z. In order to connect the flow path pipe of the gas inflow portion 140 to the internal channel TN of the facing plate 120, the facing plate 120 may include an inflow opening FOP. The inflow opening FOP may penetrate a space from the upper surface of the facing plate 120 to the internal passage TN in the thickness direction. The flow path pipe of the gas inflow portion 140 entering the exhaust space ES may be connected to the inflow opening FOP facing the plate 120.

In some embodiments, the thin film processing apparatus 10 may include a power supply part 300 for generating plasma and/or a plasma generating electrode (not shown) as a process apparatus using plasma. The power supply unit 300 may apply a high Frequency (RF) power to the plasma generating electrode. The plasma generating electrode may be provided at an upper portion of the showerhead 100, or may be provided integrally with the showerhead 100. Examples of integration of the plasma generating electrode with the showerhead 100 include, but are not limited to, examples in which the back plate 110 and/or the facing plate 120 of the showerhead 100 are made of a conductive material and are themselves used as the plasma generating electrode, examples in which the plasma generating electrode is buried in the back plate 110 and/or the facing plate 120, and the like. Hereinafter, the back plate 110 will be described on the premise that it includes a plasma generating electrode.

Fig. 3 is a bottom perspective view of a facing plate of a spray head according to an embodiment. Fig. 4 is a perspective view illustrating separation of the internal passage from fig. 3.

Referring to fig. 3 and 4, the internal channel TN of the facing plate 120 may include at least one main channel tn_m and at least one sub-channel tn_s spatially connected with the main channel tn_m. Although the case where one main channel TN_M and fourteen sub-channels TN_S are arranged is illustrated in the drawings, it is apparent that the number of main channels TN_M and sub-channels TN_S is not limited to the illustrated case.

The main channel tn_m and the sub-channel tn_s are respectively arranged in the middle region in the thickness direction of the facing plate 120. Here, the intermediate region in the thickness direction refers to a region that is not in contact with the upper surface and the lower surface, which are end portions in the thickness direction, but is spaced apart from the upper surface and the lower surface. The main channel tn_m and the sub-channel tn_s are spaced apart from the upper and lower surfaces of the facing plate 120, respectively.

In an embodiment, the center lines in the thickness direction of the main channel tn_m and the sub-channel tn_s may be arranged on substantially the same plane. The plane in which the centerlines of the main channel tn_m and the sub channel tn_s in the thickness direction are arranged may be an XY plane.

The cross-sectional shapes of the main channel tn_m and the sub-channel tn_s (cross-sectional shapes taken in a direction perpendicular to the extending direction) may be circular, but are not limited thereto. The overall shape of the main channel TN_M and the sub-channel TN_S may be cylindrical. In one embodiment, the diameter of the main channel TN_M may be greater than the diameter of the sub-channel TN_S. The diameter of the main channel TN_M may be more than twice the diameter of the sub-channel TN_S. For example, the diameter of the main channel TN_M may be 20mm to 40mm, and the diameter of the sub-channel TN_S may be 5mm to 20mm, but is not limited thereto.

In the planar arrangement, the main channel tn_m may be arranged at the center of the width in the second direction Y facing the plate 120. The main channel tn_m may traverse both sides of the facing plate 120 extending in the second direction Y. The extending direction of the main channel tn_m may be the first direction X. The main channel tn_m may bisect the facing plate 120 in a plane.

In a planar arrangement, the sub-channel TN_S may traverse between a side of the facing plate 120 extending in the first direction X and the main channel TN_M. The sub-channel TN_S may be spatially connected to the main channel TN_M. The sub-channel tn_s may extend in the second direction Y. The extending direction of each sub-channel TN_S may be the same. The sub-channel TN_S located at one side with reference to the main channel TN_M may be aligned with an extension line of the sub-channel TN_S located at the other side, but is not limited thereto.

The plurality of sub-channels tn_s may be arranged at a constant pitch along the second direction Y. The pitch of the sub-channels TN_S may be 5mm to 50mm.

The inflow opening FOP to which the flow path pipe of the gas inflow part 140 is connected may be disposed at an upper portion of the main channel tn_m. The inflow opening FOP may be provided to penetrate an upper portion of the main channel tn_m.

At least one injection hole DH is connected to each sub-channel tn_s. The injection holes DH penetrate the bottom region of the sub-channel tn_s. The injection hole DH may extend in the third direction Z, and a cross-sectional shape taken perpendicular to the extending direction may be a circle. The diameter of the injection holes DH may be smaller than the diameter of the sub-channel tn_s, and in an embodiment, the diameter of the injection holes DH may be 0.4mm to 5mm. The length of the injection hole DH connected to the sub-channel tn_s may be maintained to be 5mm or more. In the case where the length of the injection hole DH connected to the sub-channel tn_s is 5mm or more, it may be advantageous to control the injection direction of the gas within a predetermined range. That is, the gas may be guided to be injected in the extending direction of the injection holes DH.

The plurality of injection holes dh_s in one sub-channel tn_s may have a uniform pitch. In an embodiment, the interval between the injection holes dh_s arranged in the second direction Y of one sub-channel tn_s and the interval between the injection holes dh_s of the adjacent sub-channel tn_s in the first direction X may also be uniform. That is, the injection holes DH may be arranged at uniform intervals in the first direction X and the second direction Y over the entire facing plate 120. The gas can be uniformly injected into the reaction space RS by the uniform arrangement of the injection holes dh_s.

In some embodiments, at least one injection hole DH may also be connected to the main channel TN_M. The injection holes DH of the main channel tn_m may extend in the same direction as the injection holes DH of the sub-channel tn_s. The size and pitch of the injection holes DH connected to the main channel tn_m may be the same as those of the injection holes DH arranged in the sub-channel tn_s described above. However, it is not limited thereto, and the injection hole DH of the main passage tn_m may be omitted.

The exhaust hole EH is disposed in a region where the internal passage TN is not disposed. The diameter of the exhaust hole eh_s may be 0.4mm to 5mm, and the interval of the exhaust hole eh_s may be 5mm to 50mm. The diameter and the pitch of the exhaust holes eh_s may be the same as those of the injection holes DH, but may be different from each other. In the case of the exhaust holes eh_s, the exhaust holes eh_s may be arranged at uniform intervals in the first direction X and the second direction Y over the entire facing plate 120. Thus, the gas in the reaction space RS can be uniformly discharged to the exhaust space ES, and since the exhaust process uniformly occurs over the entire surface of the reaction space RS, the exhaust time can be shortened.

In an embodiment, the exhaust holes EH and the injection holes DH may be uniformly aligned in the first direction X and the second direction Y on the lower surface of the facing plate 120, but are not limited thereto.

Referring to fig. 5, the thin film deposition method using the thin film processing apparatus according to an embodiment takes as one cycle the following steps: a step of supplying a source gas G1 and a reaction gas G2; a step of supplying a reaction gas G2 and a purge gas G3; a step of supplying a reaction gas G2 and applying an RF power; a step of supplying a reaction gas G2 and a purge gas G3. Decompose the time of one period into t ₁ 、t ₂ 、t ₃ 、t ₄ And t ₅ But will be described. The reaction gas G2 is supplied throughout the entire cycle, at t ₁ To t ₂ Supply source gas G1, at t ₂ To t ₃ Supplying a purge gas G3, at t ₃ To t ₄ Applying RF power, and at t ₄ To t ₅ Purge gas G3 is supplied. Although only t is shown in the drawings ₁ To t ₅ But a thin film deposition method using the thin film processing apparatus according to an embodiment is described as t ₁ To t ₅ The operation is performed for one cycle. Thus, at t ₁ State of the thin film processing apparatus at time and at t ₅ The state of the thin film processing apparatus may be substantially the same.

Hereinafter, description will be made with reference to the timing chart of fig. 5 and the gas flow charts of fig. 6 to 9.

Referring to fig. 5 and 6, the step of supplying the source gas G1 and the reaction gas G2 is a step of flowing the source gas G1 and the reaction gas G2 into the reaction space RS through the gas inflow part 140 and flowing out into the exhaust space ES through the exhaust hole EH.

At t ₁ To t ₂ The source gas G1 and the reaction gas G2 may move to the internal channel TN inside the showerhead 100 through the gas inflow part 140. The source gas G1 and the reactant gas G2 may fill the main channel tn_m and the sub-channel tn_s of the internal channel TN, and may move to the reaction space RS through the injection holes DH. The source gas G1 and the reaction gas G2 moved to the reaction space RS may contact the substrate SU on the susceptor 200 disposed in the reaction space RS and fill the reaction space RS. The source gas G1 and the reaction gas G2 disposed in the reaction space RS may be moved to the exhaust space ES through the exhaust hole EH disposed in the upper portion of the reaction space RS. That is, the exhaust hole EH may be disposed at an upper portion of the reaction space RS, and the pressure of the reaction space RS increases due to the source gas G1 and the reaction gas G2 continuously flowing in, so that the source gas G1 and the reaction gas G2 disposed in the reaction space RS may be exhausted along the exhaust hole EH. The source gas G1 and the reaction gas G2 exhausted from the reaction space RS may pass through the showerhead 100 along the exhaust hole EH to move to the exhaust space ES disposed at an upper portion of the showerhead 100. The source gas G1 and the reaction gas G2, which have moved to the exhaust space ES, can be moved to the outside through the through-holes MH included in the edge sidewall 130. In the drawings, an example in which the source gas G1 and the reaction gas G2 having passed through the through hole MH move in opposite directions of the third direction Z along the outer wall OW and are discharged toward the lower portion is illustrated, but the present invention is not limited thereto. For example, according to the configuration of the thin film processing apparatus, the source gas G1 and the reaction gas G2 discharged through the through-hole MH may be moved in the third direction Z and discharged to the upper portion, or may be discharged to the outside through separate pipes.

Referring to fig. 5 and 7, the step of supplying the reaction gas G2 and the purge gas G3 is a step of flowing the reaction gas G2 and the purge gas G3 into the reaction space RS through the gas inflow part 140 and flowing out into the exhaust space ES through the exhaust hole EH.

At t ₂ To t ₃ The reaction gas G2 and the purge gas G3 may flow into the internal channel TN inside the showerhead 100 through the gas inflow portion 140. The reaction gas G2 and the purge gas G3 may fill the main channel tn_m and the sub-channel tn_s of the internal channel TN, and may move to the reaction space RS through the injection hole DH. The reaction gas G2 and the purge gas G3 moved to the reaction space RS may contact the substrate SU on the susceptor 200 disposed in the reaction space RS and fill the reaction space RS. The reaction gas G2 and the purge gas G3 disposed in the reaction space RS may be moved to the exhaust space ES through the exhaust hole EH disposed in the upper portion of the reaction space RS. That is, a vent hole EH may be disposed at an upper portion of the reaction space RS, and the pressure of the reaction space RS becomes high due to the reaction gas G2 and the purge gas G3 continuously flowing in, so that the reaction gas G2 and the purge gas G3 disposed in the reaction space RS may be discharged along the vent hole EH. The reaction gas G2 and the purge gas G3 exhausted from the reaction space RS may pass through the showerhead 100 along the exhaust hole EH and then move to the exhaust space ES disposed at an upper portion of the showerhead 100. The reaction gas G2 and the purge gas G3 moved to the exhaust space ES may be moved to the outside through the through-hole MH included in the edge sidewall 130.

In the process in which the reaction gas G2 and the purge gas G3 flow into the reaction space RS and are discharged to the exhaust space ES, the source gas G1 and the reaction gas G2 remaining in the reaction space RS may move from the reaction space RS to the exhaust space ES together with the reaction gas G2 and the purge gas G3. In other words, the reaction gas G2 and the purge gas G3 may function as the purge gas G3. Thereby, the source gas G1 and the reaction gas G2 remaining without being adsorbed to the substrate SU can be removed from the reaction space RS.

Referring to fig. 5 and 8, the step of supplying the reaction gas G2 and applying the RF power is a step in which the power supply portion 300 applies the RF power to the plasma generating electrode so that the source gas G1 and the reaction gas G2 adsorbed on the substrate SU are deposited on the substrate SU.

At t ₃ To t ₄ The reaction gas G2 flows in and is discharged through the same path as in fig. 7 and 8. The RF power source can ionize the source gas G1 and the reaction gas G2 adsorbed on the substrate SU, and ionizeThe source gas G1 and the reaction gas G2 may be deposited on the substrate SU. On the drawing, the upper surface of the substrate SU and the deposition layers for depositing the active gas G1 and the reactive gas G2 are shown in a flat shape, but are not limited thereto. For example, the upper surface of the substrate SU may include a plurality of holes and/or layers to be uneven, and the shape of the deposition layer deposited on the substrate SU may also be as uneven as the upper surface of the substrate SU.

Referring to fig. 5 and 9, the steps of supplying the reaction gas G2 and the purge gas G3 may be substantially the same as the process of fig. 7, except that the gases removed by the inflow of the reaction gas G2 and the purge gas G3 are the source gas G1 and the reaction gas G2 excited by the RF power. Duplicate explanation is omitted.

As described above, the showerhead 100 may include the exhaust hole EH penetrating the facing plate 120, and the edge sidewall 130 includes the through hole MH to exhaust the gas of the reaction space RS to the upper portion, so that the purge time may be effectively shortened. Thus, the time-sharing purge time can be effectively shortened, and one cycle of the time-sharing process can be shortened to less than 1 second.

Referring to fig. 10, another thin film deposition method using the thin film processing apparatus according to an embodiment takes as one cycle the following steps: a step of supplying a source gas G1 and a reaction gas G2 and applying an RF power; a step of supplying a source gas G1 and a reaction gas G2. Decompose the time of one period into t ₆ 、t ₇ 、t ₈ But will be described. The source gas G1 and the reaction gas G2 are supplied throughout the entire cycle, and at t ₆ To t ₇ An RF power is applied. Although only t is shown in the figure ₆ To t ₈ But with another thin film deposition method using the thin film processing apparatus according to an embodiment, at t ₆ To t ₈ The operation is performed for one cycle. Thus, at t ₆ State of the thin film processing apparatus at time and at t ₈ The state of the thin film processing apparatus may be substantially the same.

Hereinafter, description will be made with reference to the timing chart of fig. 10 and the gas flow charts of fig. 11 and 12.

Referring to fig. 10 and 11, the steps of supplying the source gas G1 and the reaction gas G2 and applying the RF power are as follows: the source gas G1 and the reaction gas G2 flow into the reaction space RS through the gas inflow part 140 and flow out into the exhaust space ES through the exhaust hole EH, and the power supply part 300 applies RF power to the plasma generating electrode, so that the source gas G1 and the reaction gas G2 adsorbed on the substrate SU are deposited on the substrate SU.

At t ₆ To t ₇ The source gas G1 and the reaction gas G2 may move to the internal channel TN inside the showerhead 100 through the gas inflow part 140. The source gas G1 and the reactant gas G2 may fill the main channel tn_m and the sub-channel tn_s of the internal channel TN, and may move to the reaction space RS through the injection holes DH. The source gas G1 and the reaction gas G2 moved to the reaction space RS may contact the substrate SU on the susceptor 200 disposed in the reaction space RS and fill the reaction space RS. The source gas G1 and the reaction gas G2 disposed in the reaction space RS may be moved to the exhaust space ES through the exhaust hole EH disposed in the upper portion of the reaction space RS. That is, the exhaust hole EH may be disposed at an upper portion of the reaction space RS, and the pressure of the reaction space RS becomes high due to the source gas G1 and the reaction gas G2 continuously flowing in, so that the source gas G1 and the reaction gas G2 disposed in the reaction space RS may be exhausted along the exhaust hole EH. The source gas G1 and the reaction gas G2 exhausted from the reaction space RS may pass through the showerhead 100 along the exhaust hole EH and then move to the exhaust space ES disposed at an upper portion of the showerhead 100. During the movement of the source gas G1 and the reaction gas G2, a portion of the source gas G1 and the reaction gas G2 may be adsorbed on the substrate SU, and another portion of the source gas G1 and the reaction gas G2 may remain inside the reaction space RS without being adsorbed. The RF power source may ionize the source gas G1 and the reaction gas G2 adsorbed on the substrate SU, and the ionized source gas G1 and reaction gas G2 may be deposited on the substrate SU.

Referring to fig. 10 and 12, the step of supplying the source gas G1 and the reaction gas G2 is a step of flowing the source gas G1 and the reaction gas G2 into the reaction space RS through the gas inflow portion 140 and flowing out into the exhaust space ES through the exhaust hole EH.

At t ₇ To t ₈ The source gas G1 and the reaction gas G2 move along the same path as fig. 11, and no RF power is applied. The source gas G1 and the reaction gas G2 may flow into and out of the reaction space RS, and simultaneously, the residual gas excited by the RF power source but not deposited on the substrate SU may be exhausted to the outside.

The thin film processing apparatus 10_1 according to the present embodiment is different from the embodiment of fig. 1 in that the gas inflow portion 140 and the internal channel TN are two. Therefore, the overlapping portions with the embodiment of fig. 1 will be omitted below, and the differences will be mainly described.

Referring to fig. 13, the thin film processing apparatus 10_1 includes a first gas inflow portion 141, a second gas inflow portion 142, a first internal channel TN1, and a second internal channel TN2.

The first gas inflow portion 141 and the first internal channel TN1 may be substantially the same as the gas inflow portion 140 and the internal channel TN of fig. 1.

The head 100_1 includes a first internal channel TN1 and a second internal channel TN2 spatially separated from each other. In the cross-sectional view, the first internal passage TN1 and the second internal passage TN2 may be arranged to be spaced apart from each other along the third direction Z. The first internal channel TN1 may have the same shape as the internal channel TN of fig. 1, but may be arranged inside the head 100_1 toward the opposite direction of the third direction Z in the cross-sectional view. In the cross-sectional view, a second internal channel TN2 may be arranged in the third direction Z of the first internal channel TN 1.

The first internal passage TN1 may be connected to the inflow ports of the source gas G1 and the reaction gas G2 to receive the gas through the inflow ports of the source gas G1 and the reaction gas G2, the second internal passage TN2 may be connected to the inflow ports of the reaction gas G2 and the purge gas G3 to receive the gas through the inflow ports of the reaction gas G2 and the purge gas G3, and the inflow ports of the source gas G1 and the reaction gas G2 and the inflow ports of the reaction gas G2 and the purge gas G3, and the first internal passage TN1 and the second internal passage TN2 may be spatially separated from each other. In other words, the inside of the inflow ports of the source gas G1 and the reactant gas G2 and the inside of the inflow ports of the reactant gas G2 and the purge gas G3 may not be connected to each other, and the inside of the first internal channel TN1 and the inside of the second internal channel TN2 may not be connected to each other.

In order to connect the flow path pipes of the first and second gas inflow parts 141 and 142 to the first and second internal passages TN1 and TN2 of the facing plate 120_1, the facing plate 120_1 may include first and second inflow openings FOP1 and FOP2. Each of the first inflow opening FOP1 and the second inflow opening FOP2 may penetrate a space from the upper surface of the facing plate 120_1 to the first and second internal passages TN1 and TN2 in the thickness direction. The flow path pipe of the first gas inflow portion 141 may be connected to the first inflow opening FOP1, and the flow path pipe of the second gas inflow portion 142 may be connected to the second inflow opening FOP2.

The facing plate 120_1 may include a first injection hole DH1, a second injection hole DH2, and an exhaust hole EH. The first injection hole DH1 may be a gas exhaust port that exhausts a gas flowing into the first internal passage TN1 through the inlets of the source gas G1 and the reactant gas G2 to the reaction space RS, the second injection hole DH2 may be a gas exhaust port that exhausts a gas flowing into the second internal passage TN2 through the inlets of the reactant gas G2 and the purge gas G3 to the reaction space RS, and the exhaust hole EH may be a gas exhaust port that exhausts a gas of the reaction space RS to the exhaust space ES. The first injection holes DH1, the second injection holes DH2, and the exhaust holes EH may have a shape extending substantially in the third direction Z. The first injection holes DH1, the second injection holes DH2, and the exhaust holes EH may be opened at a lower surface of the facing plate 120_1, which faces the reaction space RS, respectively.

The first injection holes DH1 may spatially connect the first internal channel TN1 of the facing plate 120_1 and the reaction space RS through between the first internal channel TN1 of the facing plate 120_1 and the lower surface of the facing plate 120_1, and the second injection holes DH2 may spatially connect the second internal channel TN2 of the facing plate 120_1 and the reaction space RS through between the second internal channel TN2 of the facing plate 120_1 and the lower surface of the facing plate 120_1. Inside the head 100_1, the first and second injection holes DH1 and DH2 may be spatially separated without being connected to each other.

The exhaust hole EH is separated from the first and second internal passages TN1 and TN2 inside the showerhead 100_1 to connect the reaction space RS to the exhaust space ES. That is, the head 100_1 may internally include a first internal passage TN1, a second internal passage TN2, and an exhaust hole EH separated from each other.

Fig. 14 and 15 show the supply times of the respective gases in the case of general time-division Atomic Layer Deposition (ALD).

Referring to fig. 14 and 15, since the source gas G1 and the reaction gas G2 react while being mixed with each other, the source gas G1 and the reaction gas G2 may flow into the thin film processing apparatus 10_1 at different times from each other. The time when the source gas G1 flows into the first gas inflow part 141 and the time when the reaction gas G2 flows into the second gas inflow part 142 may be different from each other. Further, the purge gas G3 may flow into the first and second gas inflow parts 141 and 142 between the time when the source gas G1 flows into the first and second gas inflow parts 141 and 142 and the time when the reaction gas G2 flows into the second gas inflow part 142.

The source gas G1 and the reaction gas G2 may be mixed and reacted in the reaction space RS. For example, in the case where the thin film processing apparatus 10_1 is a deposition apparatus for forming zirconia which is one of insulating films of an organic light-emitting display apparatus, a film containing a material such as Zr (N (CH) ₃ ) ₂ (C ₂ H ₅ )) ₃ 、Zr(N(CH ₃ )C ₂ H ₅ ) ₄ 、Zr(OC(CH ₃ ) ₃ ) ₄ Source gas G1 of zirconium-containing organometallic precursor and the like and oxygen (O) ₂ ) Or nitrous oxide (N) ₂ O) or the like. Zirconium component of source gas G1 and reaction gasThe oxygen component of G2 is deposited together on the substrate SU, so that a zirconia film can be formed. In addition, even in the case where the source gas G1 and the reaction gas G2 meet in a space other than the substrate SU, the source gas G1 and the reaction gas G2 may react with each other to form zirconia, and thus formed zirconia may be formed into particles. If the above-described reactant gas G2 barrier structure is employed, the source gas G1 and the reactant gas G2 passing through the showerhead 100_1 may meet at the reaction space RS to form particles, but may not meet at the first internal passages TN1, the second internal passages TN2, the first injection holes DH1, the second injection holes DH2, etc. inside the showerhead 100_1. Therefore, the formation of zirconia particles inside the showerhead 100_1 can be fundamentally prevented.

Referring to fig. 16, the source gas G1 may flow into the first gas inflow portion 141 and may move to the reaction space RS through the first internal passage TN1 and the first injection holes DH 1. The reaction gas G2 may flow into the second gas inflow portion 142 and move to the reaction space RS through the second internal passage TN2 and the second injection holes DH 2. The source gas G1 and the reaction gas G2 may react in the reaction space RS to be deposited on the substrate SU. When the purge gas G3 flows into the first and second gas inflow parts 141 and 142, the remaining residual gas that is not deposited on the substrate SU may pass through the exhaust hole EH, the exhaust space ES, and be discharged to the external space OS through the through hole MH by the pressure of the purge gas G3. The residual gas moved to the external space OS may be finally discharged to the outside through the external hole OH. As described above, by separating the inflow ports of the source gas G1 and the reactant gas G2, it is possible to prevent residues generated by the reaction of the source gas G1 and the reactant gas G2 from depositing inside the first internal passage TN1, the first injection holes DH1, the second internal passage TN2, and the second injection holes DH 2. In other words, by separating the moving paths of the source gas G1 and the reaction gas G2, the durability of the thin film processing apparatus 10_1 can be improved.

The gas inflow part 140 includes a first gas inflow part 141 into which the source gas G1 flows, and a second gas inflow part 142 into which the reaction gas G2 flows. In the case where the thin film processing apparatus 10_1 is a thin film deposition apparatus for forming an oxide film, the source gas G1 may include a metal precursor including zirconium (Zr), hafnium (Hf), titanium (Ti), or the like. For example, the source gas G1 may include a gas selected from Zr (N (CH) ₃ ) ₂ (C ₂ H ₅ )) ₃ 、Zr(N(CH ₃ )C ₂ H ₅ )4、Zr(OC(CH ₃ ) ₃ ) ₄ 、Ti(N(CH ₃ ) ₂ (C ₂ H ₅ ))、Hf(N(CH ₃ ) ₃ (C ₂ H ₅ )) ₃ 、Hf(N(CH ₃ )C ₂ H ₅ ) ₄ Hf (OC (CH) ₃ ) ₃ ) ₄ More than one kind of the group. The reaction gas G2 may include oxygen O ₂ And/or nitrous oxide N ₂ O. The oxide film formed by the inflow of the source gas G1 and the reaction gas G2 may be zirconia (ZrO ₂ ) Hafnium oxide (HfO) ₂ ) Titanium oxide (TiO) ₂ ) Etc. The oxide film deposited using the metal precursor may be a high dielectric constant (high-k) oxide film having a dielectric constant of 10 to 50.

The embodiments of the present utility model have been described above with reference to the accompanying drawings, but it will be understood by those having ordinary skill in the art to which the present utility model pertains that the present utility model may be embodied in other specific forms without changing the technical idea or essential features thereof. The above-described embodiments are, therefore, to be considered in all respects as illustrative and not restrictive.

Claims

1. A thin film processing apparatus, comprising:

a base for placing the substrate;

the spray head is used as a spray head opposite to the base and comprises a first plate, a second plate and edge side walls; and

an inner wall disposed between the susceptor and the showerhead and defining a reaction space in which the substrate is disposed together with the susceptor and the showerhead,

wherein the first plate comprises:

an inner passage crossing a thickness direction of the first plate;

an injection hole penetrating from the inner passage to a surface of the first plate in a first direction; and

an exhaust hole penetrating through the one and other surfaces of the first plate in the first direction,

wherein the edge sidewall defines an exhaust space as a space between the other surface of the first plate and one surface of the second plate,

the edge side wall is disposed between the first plate and the second plate, and includes a through hole penetrating the edge side wall in a second direction intersecting the first direction.

2. The thin film processing apparatus according to claim 1, wherein,

the vent hole spatially connects the reaction space with the vent space.

3. The thin film processing apparatus according to claim 1, wherein,

the region of the exhaust space that meets the second plate is covered by the second plate such that the exhaust space is spatially separated from a space located in an opposite direction of the exhaust space with the second plate interposed therebetween.

4. The thin film processing apparatus as recited in claim 3, further comprising:

a gas inflow part for supplying gas to the shower head,

wherein the gas inflow portion includes an inflow pipe connected to the inner passage,

the inflow pipe is spatially separated from the exhaust space.

5. The thin film processing apparatus according to claim 4, wherein,

the second plate includes inflow holes penetrating the second plate in a thickness direction,

the inflow pipe is connected to the internal passage through the inflow hole.

6. The thin film processing apparatus according to claim 1, wherein,

the inner wall integrally covers a side face of the reaction space in the second direction so that a space in the opposite direction of the reaction space from the reaction space spatially separates the inner wall with the inner wall interposed therebetween.

7. The thin film processing apparatus according to claim 1, further comprising:

a power supply section for applying a radio frequency power to the second board,

wherein radio frequency power applied to the second plate is transferred to the first plate through the edge sidewall.

8. The thin film processing apparatus according to claim 1, wherein,

the first plate further includes a sub-interior passage and a sub-injection hole,

the sub-internal passage and the sub-injection hole are spatially separated from the internal passage, the injection hole, and the exhaust hole.

9. A thin film processing apparatus, comprising:

a gas inlet through which a gas flows from the outside;

a first plate as a first plate including an inner passage spatially connected to the gas inflow port and an injection hole penetrating a surface of the inner passage, including an exhaust hole spaced apart from the inner passage and penetrating the first plate;

a reaction space spatially connected to the internal passage through the injection hole; and

an exhaust space spatially connected to the reaction space through the exhaust hole and disposed in an opposite direction of the reaction space with the first plate interposed therebetween,

Wherein the exhaust space is defined by the first plate, an edge sidewall disposed on the other surface of the first plate, and a second plate opposing the other surface of the first plate with the edge sidewall interposed therebetween,

the edge sidewall includes a through hole therethrough,

the vent hole is spatially connected to the through hole.

10. The thin film processing apparatus according to claim 9, wherein,

the gas flowing in through the gas inflow port moves to the inner passage,

the gas flowing into the inner passage moves to the reaction space through the injection hole,

the gas flowing into the reaction space moves to the exhaust space through the exhaust hole,

the gas flowing into the exhaust space is discharged from the exhaust space through the through hole included in the edge sidewall.