TWI411622B - 包含有含氮芳香環構造之微影用形成防反射膜之組成物 - Google Patents

包含有含氮芳香環構造之微影用形成防反射膜之組成物 Download PDF

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Publication number
TWI411622B
TWI411622B TW94134985A TW94134985A TWI411622B TW I411622 B TWI411622 B TW I411622B TW 94134985 A TW94134985 A TW 94134985A TW 94134985 A TW94134985 A TW 94134985A TW I411622 B TWI411622 B TW I411622B
Authority
TW
Taiwan
Prior art keywords
compound
forming
antireflection film
composition
lithography
Prior art date
Application number
TW94134985A
Other languages
English (en)
Chinese (zh)
Other versions
TW200621828A (en
Inventor
Tomoyuki Enomoto
Yoshiomi Hiroi
Keisuke Nakayama
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200621828A publication Critical patent/TW200621828A/zh
Application granted granted Critical
Publication of TWI411622B publication Critical patent/TWI411622B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
TW94134985A 2004-10-12 2005-10-06 包含有含氮芳香環構造之微影用形成防反射膜之組成物 TWI411622B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004297641 2004-10-12

Publications (2)

Publication Number Publication Date
TW200621828A TW200621828A (en) 2006-07-01
TWI411622B true TWI411622B (zh) 2013-10-11

Family

ID=36148216

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94134985A TWI411622B (zh) 2004-10-12 2005-10-06 包含有含氮芳香環構造之微影用形成防反射膜之組成物

Country Status (3)

Country Link
JP (1) JP4697464B2 (ja)
TW (1) TWI411622B (ja)
WO (1) WO2006040918A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8445175B2 (en) 2006-06-19 2013-05-21 Nissan Chemical Industries, Ltd. Composition containing hydroxylated condensation resin for forming resist underlayer film
US8039201B2 (en) 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8318410B2 (en) 2008-01-30 2012-11-27 Nissan Chemical Industries, Ltd. Sulfur atom-containing resist underlayer film forming composition and method for forming resist pattern
JP2012203393A (ja) * 2011-03-28 2012-10-22 Jsr Corp レジスト下層膜形成用組成物、レジスト下層膜及びパターン形成方法
KR101657052B1 (ko) * 2011-12-29 2016-09-20 금호석유화학 주식회사 유기 반사 방지막 조성물
CN105849642B (zh) * 2013-12-27 2019-06-11 日产化学工业株式会社 含有主链具有三嗪环及硫原子的共聚物的抗蚀剂下层膜形成用组合物
JP6544035B2 (ja) * 2015-05-13 2019-07-17 Jsr株式会社 感光性樹脂組成物およびその用途
US20200041905A1 (en) 2016-10-14 2020-02-06 Nissan Chemical Corporation Resist underlying film-forming composition containing an amide group-containing polyester
KR102047538B1 (ko) 2017-02-03 2019-11-21 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
JPWO2019039355A1 (ja) 2017-08-24 2020-07-30 日産化学株式会社 レジスト下層膜形成組成物
KR102264693B1 (ko) * 2018-06-11 2021-06-11 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
JP6725016B2 (ja) * 2019-02-04 2020-07-15 Jsr株式会社 重合体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200606591A (en) * 2004-04-09 2006-02-16 Nissan Chemical Ind Ltd Condensed polymer-containing anti-reflective coating for semiconductor

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
JPH04247643A (ja) * 1991-02-04 1992-09-03 Mitsubishi Electric Corp 半導体装置およびその製造方法
WO2002086624A1 (fr) * 2001-04-10 2002-10-31 Nissan Chemical Industries, Ltd. Composition servant a former un film antireflet pour procede lithographique
JP4243825B2 (ja) * 2002-05-24 2009-03-25 日産化学工業株式会社 リソグラフィー用反射防止膜形成組成物
US7323289B2 (en) * 2002-10-08 2008-01-29 Brewer Science Inc. Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
AU2003271123A1 (en) * 2002-10-09 2004-05-04 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
JP4214380B2 (ja) * 2003-01-09 2009-01-28 日産化学工業株式会社 エポキシ化合物誘導体を含む反射防止膜形成組成物
EP1757985A4 (en) * 2004-03-16 2010-10-27 Nissan Chemical Ind Ltd ANTIREFLECTION FILM CONTAINING SULFUR ATOM

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200606591A (en) * 2004-04-09 2006-02-16 Nissan Chemical Ind Ltd Condensed polymer-containing anti-reflective coating for semiconductor

Also Published As

Publication number Publication date
JPWO2006040918A1 (ja) 2008-05-15
TW200621828A (en) 2006-07-01
WO2006040918A1 (ja) 2006-04-20
JP4697464B2 (ja) 2011-06-08

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