TWI411622B - 包含有含氮芳香環構造之微影用形成防反射膜之組成物 - Google Patents
包含有含氮芳香環構造之微影用形成防反射膜之組成物 Download PDFInfo
- Publication number
- TWI411622B TWI411622B TW94134985A TW94134985A TWI411622B TW I411622 B TWI411622 B TW I411622B TW 94134985 A TW94134985 A TW 94134985A TW 94134985 A TW94134985 A TW 94134985A TW I411622 B TWI411622 B TW I411622B
- Authority
- TW
- Taiwan
- Prior art keywords
- compound
- forming
- antireflection film
- composition
- lithography
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Epoxy Resins (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004297641 | 2004-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200621828A TW200621828A (en) | 2006-07-01 |
TWI411622B true TWI411622B (zh) | 2013-10-11 |
Family
ID=36148216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94134985A TWI411622B (zh) | 2004-10-12 | 2005-10-06 | 包含有含氮芳香環構造之微影用形成防反射膜之組成物 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4697464B2 (ja) |
TW (1) | TWI411622B (ja) |
WO (1) | WO2006040918A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8445175B2 (en) | 2006-06-19 | 2013-05-21 | Nissan Chemical Industries, Ltd. | Composition containing hydroxylated condensation resin for forming resist underlayer film |
US8039201B2 (en) | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8318410B2 (en) | 2008-01-30 | 2012-11-27 | Nissan Chemical Industries, Ltd. | Sulfur atom-containing resist underlayer film forming composition and method for forming resist pattern |
JP2012203393A (ja) * | 2011-03-28 | 2012-10-22 | Jsr Corp | レジスト下層膜形成用組成物、レジスト下層膜及びパターン形成方法 |
KR101657052B1 (ko) * | 2011-12-29 | 2016-09-20 | 금호석유화학 주식회사 | 유기 반사 방지막 조성물 |
CN105849642B (zh) * | 2013-12-27 | 2019-06-11 | 日产化学工业株式会社 | 含有主链具有三嗪环及硫原子的共聚物的抗蚀剂下层膜形成用组合物 |
JP6544035B2 (ja) * | 2015-05-13 | 2019-07-17 | Jsr株式会社 | 感光性樹脂組成物およびその用途 |
US20200041905A1 (en) | 2016-10-14 | 2020-02-06 | Nissan Chemical Corporation | Resist underlying film-forming composition containing an amide group-containing polyester |
KR102047538B1 (ko) | 2017-02-03 | 2019-11-21 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
JPWO2019039355A1 (ja) | 2017-08-24 | 2020-07-30 | 日産化学株式会社 | レジスト下層膜形成組成物 |
KR102264693B1 (ko) * | 2018-06-11 | 2021-06-11 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
JP6725016B2 (ja) * | 2019-02-04 | 2020-07-15 | Jsr株式会社 | 重合体 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200606591A (en) * | 2004-04-09 | 2006-02-16 | Nissan Chemical Ind Ltd | Condensed polymer-containing anti-reflective coating for semiconductor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04247643A (ja) * | 1991-02-04 | 1992-09-03 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
WO2002086624A1 (fr) * | 2001-04-10 | 2002-10-31 | Nissan Chemical Industries, Ltd. | Composition servant a former un film antireflet pour procede lithographique |
JP4243825B2 (ja) * | 2002-05-24 | 2009-03-25 | 日産化学工業株式会社 | リソグラフィー用反射防止膜形成組成物 |
US7323289B2 (en) * | 2002-10-08 | 2008-01-29 | Brewer Science Inc. | Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties |
AU2003271123A1 (en) * | 2002-10-09 | 2004-05-04 | Nissan Chemical Industries, Ltd. | Composition for forming antireflection film for lithography |
JP4214380B2 (ja) * | 2003-01-09 | 2009-01-28 | 日産化学工業株式会社 | エポキシ化合物誘導体を含む反射防止膜形成組成物 |
EP1757985A4 (en) * | 2004-03-16 | 2010-10-27 | Nissan Chemical Ind Ltd | ANTIREFLECTION FILM CONTAINING SULFUR ATOM |
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2005
- 2005-09-26 JP JP2006540864A patent/JP4697464B2/ja active Active
- 2005-09-26 WO PCT/JP2005/017613 patent/WO2006040918A1/ja active Application Filing
- 2005-10-06 TW TW94134985A patent/TWI411622B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200606591A (en) * | 2004-04-09 | 2006-02-16 | Nissan Chemical Ind Ltd | Condensed polymer-containing anti-reflective coating for semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPWO2006040918A1 (ja) | 2008-05-15 |
TW200621828A (en) | 2006-07-01 |
WO2006040918A1 (ja) | 2006-04-20 |
JP4697464B2 (ja) | 2011-06-08 |
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