TWI411183B - Laser diode element - Google Patents

Laser diode element Download PDF

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Publication number
TWI411183B
TWI411183B TW099106563A TW99106563A TWI411183B TW I411183 B TWI411183 B TW I411183B TW 099106563 A TW099106563 A TW 099106563A TW 99106563 A TW99106563 A TW 99106563A TW I411183 B TWI411183 B TW I411183B
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Taiwan
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array
package board
laser diode
underlying package
convex portion
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TW099106563A
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Chinese (zh)
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TW201114126A (en
Inventor
Susumu Konno
Keisuke Furuta
Tetsuo Kojima
Masaki Seguchi
Shuichi Fujikawa
Junichi Nishimae
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Mitsubishi Electric Corp
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Publication of TW201114126A publication Critical patent/TW201114126A/en
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Publication of TWI411183B publication Critical patent/TWI411183B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/0014Measuring characteristics or properties thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02469Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures

Abstract

Disclosed is a laser diode element wherein the quantity of warpage of an LD array due to the fact that members thermally expand at different thermal expansion coefficients when the members are bonded is suppressed, and increase of thermal resistance due to increase of the thickness of a sub-mount is also suppressed. The laser diode element is provided with a laser diode array (1) having a plurality of light emitting points (11), and a sub-mount (2) having a mounting surface (21) for mounting the laser diode array (1). A protruding section (22) is provided on an end portion within the same mount surface (21) on which no laser diode array (1) is mounted, and the quantity of warpage of the laser diode (1) due to thermal expansion when bonding is performed is reduced.

Description

雷射二極體元件Laser diode component

本發明係關於具備有應力緩衝材(submount:底層封裝板)之雷射二極體元件者。The present invention relates to a laser diode element having a stress buffer material (submount).

一直以來,都要求在雷射二極體(LD)元件中,將具有複數個發光部之雷射二極體陣列(LD陣列)的翹曲量減低。因而,為了減低LD陣列(亦稱為LD條(LD bar))翹曲的原因之一的底層封裝板熱變形,而使用在上下接合有複數的素材之底層封裝板(參照例如專利文獻1)。Conventionally, it has been required to reduce the amount of warpage of a laser diode array (LD array) having a plurality of light-emitting portions in a laser diode (LD) device. Therefore, in order to reduce the thermal deformation of the underlying package board which is one of the causes of the LD array (also referred to as LD bar) warpage, an underlying package board in which a plurality of materials are bonded to each other is used (see, for example, Patent Document 1) .

【先前技術文獻】[Previous Technical Literature] 專利文獻Patent literature

專利文獻1:日本特開2006-344743號公報(段落[0013]至[0034],圖1至圖3)Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-344743 (paragraphs [0013] to [0034], Figs. 1 to 3)

在過去的具備有底層封裝板之雷射二極體元件(半導體雷射元件)中,因為係藉由複數素材的接合來作成底層封裝板,所以有底層封裝板的價格變高之課題。In the conventional laser diode element (semiconductor laser element) having the underlying package board, since the underlying package board is formed by bonding the plurality of materials, the price of the underlying package board becomes high.

此外,因為在雷射二極體陣列的下部設置有由複合材所構成之底層封裝板,所以熱阻會因底層封裝板的厚度增大而增加,而有會招致由於LD元件的溫度上昇而造成之壽命性能的劣化及雷射輸出的低下等後果之課題。In addition, since the underlying package board composed of the composite material is disposed at the lower portion of the laser diode array, the thermal resistance increases due to the increase in the thickness of the underlying package board, which may cause an increase in the temperature of the LD element. The problem of deterioration of life performance and low output of laser output.

另外,還有因為構成底層封裝板之熱膨脹率互不相同的接合構件發生熱膨脹,使得LD陣列產生翹曲之課題。In addition, there is also a problem that the LD array is warped due to thermal expansion of the bonding members constituting the underlying package sheets having different thermal expansion coefficients.

本發明係為了解決如上述的課題而完成者,其目的在於藉由在LD陣列並不會接合到之底層封裝板的端部設置凸部,而獲得一種底層封裝板中之熱阻增加獲得抑制,同時將因接合時的熱膨脹而產生之LD陣列翹曲量予以減少,而抑制整體變形之雷射二極體元件。The present invention has been made to solve the problems as described above, and an object thereof is to obtain an increase in thermal resistance in an underlying package board by providing a convex portion at an end portion of an underlying package board to which an LD array is not bonded. At the same time, the amount of warpage of the LD array due to thermal expansion at the time of bonding is reduced, and the laser diode element which suppresses the overall deformation is suppressed.

本發明之雷射二極體元件,係在具備有:具有複數個發光部之雷射二極體陣列、以及具有用來搭載雷射二極體陣列的安裝面之底層封裝板的雷射二極體元件中,在與安裝面同一面內的端部之未搭載雷射二極體陣列的部份設有凸部者。The laser diode device of the present invention includes a laser diode array having a plurality of light-emitting portions and a laser diode having an underlying package board for mounting a mounting surface of the laser diode array In the polar body element, a portion where the laser diode array is not mounted on the end portion in the same plane as the mounting surface is provided with a convex portion.

根據本發明,可減低底層封裝板及LD陣列的翹曲量,且可減低發光點分布從設計值偏離之偏差量。而且,可減低伴隨著底層封裝板厚度增大而發生之熱阻增加。According to the present invention, the amount of warpage of the underlying package board and the LD array can be reduced, and the amount of deviation of the light-emitting point distribution from the design value can be reduced. Moreover, the increase in thermal resistance that occurs with an increase in the thickness of the underlying package board can be reduced.

第1圖係顯示本發明實施例1之雷射二極體元件(半導體雷射元件)之斜視圖,其中顯示雷射二極體元件的主要部份(LD陣列及底層封裝板)之接合前與接合後的狀態。1 is a perspective view showing a laser diode element (semiconductor laser element) of Embodiment 1 of the present invention, showing a main portion of the laser diode element (LD array and underlying package board) before bonding With the state after the joint.

此外,第2圖係顯示第1圖的雷射二極體元件之分解側面圖,第3圖係顯示第2圖的雷射二極體元件之接合後的狀態以及熱的流動(虛線箭號)之側面圖。In addition, Fig. 2 is an exploded side view showing the laser diode element of Fig. 1, and Fig. 3 is a view showing the state after the bonding of the laser diode element of Fig. 2 and the flow of heat (dashed arrow) ) side view.

第1至第3圖中,雷射二極體陣列(LD陣列)1,係例如:利用MBE(Molecular Beam Epitaxy:分子束磊晶法)或MOCVD(Metal Organic Chemical Vapor Deposition:金屬有機化學氣相沉積法)等手段,使AlGaAs(砷化鋁鎵)(或InGaAsP(磷砷化銦鎵)等)之化合物在GaAs(砷化鎵)基板上層積或成長而製作得到者。In the first to third embodiments, the laser diode array (LD array) 1 is, for example, MBE (Molecular Beam Epitaxy) or MOCVD (Metal Organic Chemical Vapor Deposition). By means of a deposition method or the like, a compound of AlGaAs (aluminum gallium arsenide) (or InGaAsP (such as indium gallium arsenide)) is laminated or grown on a GaAs (gallium arsenide) substrate.

LD陣列1,典型的係具有寬度(長邊方向)為10 mm,縱深(共振器長度)為1 mm至3 mm,厚度為100μm至200μm之平板形狀,且在沿著長邊方向之端面並排形成有複數個(數十個)發光點(發光部)11。The LD array 1, typically has a flat shape having a width (longitudinal direction) of 10 mm, a depth (resonator length) of 1 mm to 3 mm, a thickness of 100 μm to 200 μm, and side by side at the end faces along the long side direction. A plurality of (tens of) light-emitting points (light-emitting portions) 11 are formed.

此外,使用GaAs作為LD陣列1的基板之情況,LD陣列1的熱膨脹率為約6.5×10-6 (K-1 )。Further, in the case where GaAs is used as the substrate of the LD array 1, the thermal expansion coefficient of the LD array 1 is about 6.5 × 10 -6 (K -1 ).

底層封裝板(應力緩衝材)2,係為了緩和LD陣列1與散熱器(heat sink)4(參照第2圖)之間的熱膨脹率差而設置者,具備有用來搭載LD陣列1之安裝面21、以及在端部形成的凸部22。The underlying package board (stress buffer material) 2 is provided to ease the difference in thermal expansion coefficient between the LD array 1 and the heat sink 4 (see FIG. 2), and includes a mounting surface for mounting the LD array 1. 21, and a convex portion 22 formed at the end.

底層封裝板(應力緩衝材)2的材料,可採用例如CuW(銅鎢合金,熱膨脹率為約6.5×10-6 (K-1 ))、AlN(氮化鋁,熱膨脹率為約4.6×10-6 (K-1 ))等。The material of the underlying package board (stress buffer material) 2 may be, for example, CuW (copper-tungsten alloy, thermal expansion coefficient of about 6.5×10 -6 (K −1 )), AlN (aluminum nitride, thermal expansion rate of about 4.6×10). -6 (K -1 )) and so on.

散熱器4的材料,可採用例如銅(熱膨脹率為約1.7×10-6 (K-1 ))。As the material of the heat sink 4, for example, copper (thermal expansion coefficient of about 1.7 × 10 -6 (K -1 )) can be used.

供LD陣列1接合於其上之安裝面21上,塗佈有Au-Sn(金-錫合金)等之焊材(未圖示)。此焊材的厚度,典型的為10μm以下。A solder material (not shown) such as Au-Sn (gold-tin alloy) is applied to the mounting surface 21 to which the LD array 1 is bonded. The thickness of the consumable is typically 10 μm or less.

底層封裝板2與散熱器4之間,係透過球粒(pellet)形狀之焊材3而接合。The underlying package board 2 and the heat sink 4 are joined by a pellet-shaped solder material 3.

如第1至第3圖般配置且形成之LD陣列1、底層封裝板2及散熱器4,係升溫至超過LD陣列1與底層封裝板2之間的焊材(Au-Sn焊材之情況,約280℃以上)的融點、以及底層封裝板2與散熱器4之間的焊材3(將在後面說明)的融點之溫度,並從上下加壓而相接合。The LD array 1, the underlying package board 2, and the heat sink 4, which are arranged and formed as shown in FIGS. 1 to 3, are heated to a temperature exceeding the solder material between the LD array 1 and the underlying package board 2 (Au-Sn solder material) The melting point of about 280 ° C or higher and the temperature of the melting point of the welding material 3 (which will be described later) between the underlying package board 2 and the heat sink 4 are pressed from above and below.

此時,底層封裝板2係在供LD陣列1接合於其上之安裝面21的那側,在與安裝面21同一面內之LD陣列1不會接合於其上的部份之端部,沿著LD陣列1的長邊方向(發光點11的排列方向)而設有凸部22。At this time, the underlying package board 2 is on the side where the mounting surface 21 to which the LD array 1 is bonded, and the end portion of the portion where the LD array 1 is not bonded to the same in the same plane as the mounting surface 21, The convex portion 22 is provided along the longitudinal direction of the LD array 1 (the direction in which the light-emitting points 11 are arranged).

藉此,利用凸部22的厚度使底層封裝板2的長邊方向的剛性增加,減輕翹曲之發生,而有抑制由於上下的溫度差而造成之底層封裝板2的翹曲、以及因為從接合時之加熱時到接合後之冷卻時的膨脹率差而發生之LD陣列1的翹曲之效果。Thereby, the rigidity of the longitudinal direction of the underlying package board 2 is increased by the thickness of the convex portion 22, the occurrence of warpage is reduced, and the warpage of the underlying package board 2 due to the temperature difference between the upper and lower sides is suppressed, and The effect of warpage of the LD array 1 caused by a difference in expansion ratio at the time of heating at the time of joining to the time of cooling after joining.

此外,第3圖中顯示LD元件振盪時之光輸出方向(粗線箭號)與熱的流動(虛線箭號),可知LD元件動作時,散熱器4會充分發揮其機能。In addition, in the third figure, the light output direction (thick line arrow) and the heat flow (dashed arrow) when the LD element is oscillated are displayed, and it is understood that the heat sink 4 fully exerts its function when theLD element operates.

第2及第3圖中,係使小球形狀的焊材3夾在底層封裝板2與散熱器4之間而進行接合,但亦可在接合前預先在底層封裝板2的下面塗佈焊材3。In the second and third figures, the pellet-shaped solder material 3 is sandwiched between the underlying package board 2 and the heat sink 4, but the solder may be applied to the underside of the underlying package board 2 before bonding. Material 3.

作為焊材3之材料,可使用In(銦)、SnAgCu(錫銀銅合金)、PbSn(鉛錫合金)等各種材料,但在考慮到接合順序之情況,為了使LD陣列1及底層封裝板2一體化之後才接合散熱器4,最好使用融點比使用於LD陣列1與底層封裝板2的接合中之焊材(Au-Sn)低之材料來作為焊材3的材料。As the material of the welding material 3, various materials such as In (indium), SnAgCu (tin-silver-copper alloy), and PbSn (lead-tin alloy) can be used, but in order to make the LD array 1 and the underlying package board in consideration of the bonding order, 2 After the integration, the heat sink 4 is joined, and it is preferable to use a material having a lower melting point than the welding material (Au-Sn) used in the joining of the LD array 1 and the underlying package board 2 as the material of the welding material 3.

如第2圖所示,使LD陣列1與和其接合之底層封裝板2一體化之後,才透過焊材3將一體化的LD陣列1及底層封裝板2接合至散熱器4。As shown in FIG. 2, after the LD array 1 is integrated with the underlying package board 2 bonded thereto, the integrated LD array 1 and the underlying package board 2 are bonded to the heat sink 4 through the solder material 3.

將底層封裝板2及LD陣列1接合至散熱器4之際,因為散熱器4、底層封裝板2及LD陣列1係升溫至比用於接合之焊材3的融點高之溫度,所以會熱膨脹,然後在接合後,以兩者相固定的狀態冷卻而收縮。When the underlying package board 2 and the LD array 1 are bonded to the heat sink 4, since the heat sink 4, the underlying package board 2, and the LD array 1 are heated to a temperature higher than the melting point of the bonding material 3 for bonding, The heat is expanded, and then, after joining, it is cooled and contracted in a state where the both are fixed.

此時,雖然由於散熱器4、底層封裝板2及焊材3之熱膨脹率差而會產生翹曲,但在此接合程序進行時,底層封裝板2的上面在長邊方向設有凸部22,所以底層封裝板2不易發生翹曲,結果就具有減低LD陣列1的翹曲量之效果。At this time, warpage occurs due to a difference in thermal expansion coefficient between the heat sink 4, the underlying package board 2, and the consumable material 3. However, when the bonding process is performed, the upper surface of the underlying package board 2 is provided with the convex portion 22 in the longitudinal direction. Therefore, the underlying package board 2 is less likely to warp, and as a result, the effect of reducing the amount of warpage of the LD array 1 is obtained.

此外,如第3圖所示,從LD陣列1射出雷射光之際,從LD陣列1所產生的熱(虛線箭號),會從與底層封裝板2接合的面傳播至散熱器4。Further, as shown in FIG. 3, when laser light is emitted from the LD array 1, heat generated from the LD array 1 (dashed arrow) propagates from the surface joined to the underlying package 2 to the heat sink 4.

此時,由於底層封裝板2係設定成其接合有LD陣列1之安裝面21的部份的厚度較薄,LD陣列1未接合於其上之凸部22的部份的厚度較厚,所以即使形成了凸部22,也不會對於從LD陣列1到散熱器4之熱的傳播造成阻礙,具有與未具有凸部22(全體都很薄之底層封裝板)之情況同等的散熱性能。At this time, since the thickness of the portion of the underlying package board 2 to which the mounting surface 21 of the LD array 1 is bonded is thin, the thickness of the portion of the LD array 1 to which the convex portion 22 is not bonded is thick, so Even if the convex portion 22 is formed, it does not hinder the propagation of heat from the LD array 1 to the heat sink 4, and has the same heat dissipation performance as the case where the convex portion 22 (the entire underlying package sheet is thin) is not provided.

因此,根據本發明實施例1之第1至第3圖的構成,在特別是翹曲容易發生的狀況,例如LD陣列1的寬度在5 mm以上,且接合有LD陣列1之安裝面21處之底層封裝板2的厚度在300μm以下之情況,具有顯著的效果。Therefore, according to the configurations of the first to third embodiments of the first embodiment of the present invention, in particular, the warpage is likely to occur, for example, the width of the LD array 1 is 5 mm or more, and the mounting surface 21 of the LD array 1 is bonded. The thickness of the underlying package board 2 is 300 μm or less, which has a remarkable effect.

底層封裝板2的凸部22,並不限定於如同沿著安裝面21(平板狀構件)的端部將四角柱接合上之形狀(參照第1至第3圖),亦可採用如第4至第8圖所示之任意的形狀及任意的配置。The convex portion 22 of the underlying package board 2 is not limited to a shape in which the four corner posts are joined along the end portion of the mounting surface 21 (flat member) (see FIGS. 1 to 3), and the fourth step can also be adopted. Any shape and arbitrary configuration as shown in Fig. 8.

第4至第8圖係顯示根據本發明實施例1之底層封裝板2的第一至第五變化例之斜視圖及平面圖。4 to 8 are perspective and plan views showing first to fifth modifications of the underlying package board 2 according to Embodiment 1 of the present invention.

第4圖係顯示底層封裝板2的第一變化例,其中顯示凸部22的上部具有曲面形狀之情況。Fig. 4 is a view showing a first variation of the underlying package board 2 in which the upper portion of the convex portion 22 is shown to have a curved shape.

第5圖係顯示底層封裝板2的第二變化例,其中顯示沿著凸部22的延長方向在中心部形成有溝槽之情況。在此情況,LD陣列1之長軸方向的耐變形強度會增大,而可使減輕形變之效果提高。Fig. 5 is a view showing a second variation of the underlying package board 2 in which a groove is formed at the center portion along the extending direction of the convex portion 22. In this case, the deformation resistance strength in the long axis direction of the LD array 1 is increased, and the effect of reducing the deformation can be improved.

第6圖係顯示底層封裝板2的第三變化例,其中顯示凸部22並非相對於底層封裝板2的端部的長邊方向配置成平行,而是配置成傾斜之情況。在此情況,不僅可減低LD陣列1之長軸方向的形變,也可減低短軸方向的形變。Fig. 6 shows a third variation of the underlying package board 2 in which the display projections 22 are not arranged in parallel with respect to the longitudinal direction of the end portion of the underlying package board 2, but are arranged to be inclined. In this case, not only the deformation in the long-axis direction of the LD array 1 but also the deformation in the short-axis direction can be reduced.

第7圖係顯示底層封裝板2的第四變化例,其中顯示凸部22平行分割為兩個,且在中央部有一部份為相向配置之情況。此情況也一樣,不僅可減低LD陣列1之長軸方向的形變,也可減低短軸方向的形變。Fig. 7 is a view showing a fourth variation of the underlying package board 2 in which the display projections 22 are divided into two in parallel, and a portion in the central portion is disposed in the opposite direction. Also in this case, not only the deformation in the long-axis direction of the LD array 1 but also the deformation in the short-axis direction can be reduced.

第8圖係顯示底層封裝板2的第五變化例,其中顯示凸部22形成為ㄈ字形,且設置在除了LD陣列1的接合部之外之底層封裝板2的三個方向之情況。Fig. 8 shows a fifth variation of the underlying package board 2 in which the display projections 22 are formed in a U shape and are disposed in three directions of the underlying package board 2 except for the joint portion of the LD array 1.

如第8圖所示,只將底層封裝板2之與LD陣列1的接合部切削掉,而形成以凸部22加以包圍之構成,不僅可減低LD陣列1之長軸方向的翹曲量,也可確實地減低短軸方向的翹曲量。As shown in Fig. 8, only the joint portion of the underlying package board 2 and the LD array 1 is cut away to form a structure surrounded by the convex portion 22, which not only reduces the amount of warpage in the long-axis direction of the LD array 1, but also reduces the amount of warpage in the long-axis direction of the LD array 1. It is also possible to surely reduce the amount of warpage in the short axis direction.

接著,參照第9至第11圖來更具體地說明本發明實施例1之雷射二極體元件的翹曲量減輕效果。Next, the effect of reducing the amount of warpage of the laser diode element of the first embodiment of the present invention will be more specifically described with reference to the ninth to eleventh drawings.

第9至第11圖係顯示針對使用具體的LD陣列1之雷射二極體元件,實際進行熱計算及構造計算之情況的結果。Figures 9 through 11 show the results of actual thermal calculations and construction calculations for a laser diode component using a specific LD array 1.

第9圖係顯示使用於翹曲量計算之雷射二極體元件的各部的實際尺寸之分解斜視圖,其中顯示進行熱計算及構造計算的情況之具體的構成。Fig. 9 is an exploded perspective view showing the actual dimensions of the respective portions of the laser diode element used for the calculation of the amount of warpage, showing a specific configuration of the case where the heat calculation and the structural calculation are performed.

第10圖係顯示在第9圖的構成中假設了上下的溫度梯度之情況之凸部22的寬度w[μm]與形變(翹曲量)的大小(與沒有設置凸部之普通的底層封裝板之比)的關係(計算例)之說明圖。第11圖係顯示在第9圖的構成中假設有上下的溫度梯度之情況之凸部的高度h[μm]與形變的大小的關係(計算例)之說明圖。Fig. 10 is a view showing the width w [μm] and the deformation (amount of warpage) of the convex portion 22 in the case where the upper and lower temperature gradients are assumed in the configuration of Fig. 9 (and the ordinary underlying package in which no convex portion is provided). Explanation of the relationship (calculation example) of the board ratio). Fig. 11 is an explanatory view showing a relationship (calculation example) of the height h [μm] of the convex portion and the magnitude of the deformation in the case where the upper and lower temperature gradients are assumed in the configuration of Fig. 9.

第9圖中,LD陣列1的形狀係設定為厚度100μm,寬度10 mm,縱深1 mm。In Fig. 9, the shape of the LD array 1 is set to a thickness of 100 μm, a width of 10 mm, and a depth of 1 mm.

底層封裝板2其未形成凸部22之安裝面21,係設定為厚度320μm,長邊方向的長度11 mm,縱深(寬度)2.5 mm。The mounting surface 21 of the underlying package board 2 on which the convex portion 22 is not formed is set to have a thickness of 320 μm, a length in the longitudinal direction of 11 mm, and a depth (width) of 2.5 mm.

凸部22則設定為長邊方向的長度為11 mm,縱深(寬度)為w(μm),高度(厚度)為h(μm)。The convex portion 22 is set to have a length of 11 mm in the longitudinal direction, w (μm) in the depth (width), and h (μm) in height (thickness).

此外,LD陣列1與底層封裝板2之間,係如前述,藉由焊材部(Au-Sn)而接合。Further, the LD array 1 and the underlying package board 2 are bonded by a solder material portion (Au-Sn) as described above.

第10及第11圖的各計算結果,係假設在第9圖的構成中,LD陣列1的上面溫度為250℃,底層封裝板2的下面溫度為300℃,而表示在LD陣列1之垂直方向的形變的大小(LD陣列1的翹曲量的大小)。The calculation results of the 10th and 11th drawings assume that in the configuration of FIG. 9, the upper surface temperature of the LD array 1 is 250 ° C, and the lower surface temperature of the underlying package board 2 is 300 ° C, which indicates the vertical direction of the LD array 1. The magnitude of the deformation of the direction (the amount of warpage of the LD array 1).

如同從第10、第11圖即可清楚看出般,從第10及第11圖的結果可知:相較於未設置凸部22的情況(w=0,h=0),設有凸部22的情況下LD陣列1的翹曲量會變小。As can be clearly seen from the 10th and 11th, it can be seen from the results of the 10th and 11th drawings that the convex portion is provided as compared with the case where the convex portion 22 is not provided (w=0, h=0). In the case of 22, the amount of warpage of the LD array 1 becomes small.

亦即,從第10圖可知將凸部22的寬度w設定為越大的值則形變越小,從第11圖可知將凸部22的高度h設定為越大的值則形變越小。In other words, it can be seen from Fig. 10 that the smaller the value of the width w of the convex portion 22 is, the smaller the deformation is. As is apparent from Fig. 11, the smaller the value of the height h of the convex portion 22, the smaller the deformation.

從以上結果,即可確認本發明實施例1所具有的效果。From the above results, the effects of the first embodiment of the present invention can be confirmed.

此外,亦可追加接合楊氏模數(Young’s modulus)較高(不易產生形變)的材料(未圖示)到凸部22,以形成可更進一步抑制翹曲量之構成。Further, a material (not shown) having a Young's modulus (not easily deformed) may be additionally joined to the convex portion 22 to form a structure capable of further suppressing the amount of warpage.

在此情況,將材料追加接合到凸部22之際,只要使用融點比和LD陣列1的接合中及和散熱器4的接合中使用的焊材3高之硬焊料等即可。In this case, when the material is additionally joined to the convex portion 22, a hard solder or the like having a higher melting point than the bonding material 3 used in the bonding of the LD array 1 and the bonding of the heat sink 4 may be used.

如此,在將LD陣列1接合至底層封裝板2之際,就不會發生接合材料剝落等之問題。Thus, when the LD array 1 is bonded to the underlying package board 2, problems such as peeling of the bonding material do not occur.

另外,亦可在追加材料到凸部22的追加接合中採用擴散接合。Further, diffusion bonding may be employed in the additional joining of the additional material to the convex portion 22.

而且,可在將追加材料追加到凸部22的接合後,進行底層封裝板2之切斷或研磨等之整形,來製作形狀精度高之底層封裝板2。In addition, after the additional material is added to the bonding of the convex portions 22, the underlying package 2 can be cut or polished, and the underlying package 2 having high shape accuracy can be produced.

此外,在構成散熱器4之材料的熱膨脹率比構成底層封裝板2的安裝面21(平板部)之材料的熱膨脹率大之情況,在熱膨脹的狀態下進行接合後的冷卻過程中,散熱器4會收縮得比底層封裝板2大,所以底層封裝板2會翹曲成中心部向上方偏移之形態。Further, in the case where the coefficient of thermal expansion of the material constituting the heat sink 4 is larger than the thermal expansion coefficient of the material constituting the mounting surface 21 (flat plate portion) of the underlying package board 2, the heat sink is cooled in the state of thermal expansion, and the heat sink is used. 4 will shrink more than the underlying package board 2, so the underlying package board 2 will warp so that the center portion is shifted upward.

因此,為了將此翹曲抵銷以減低翹曲量,可在底層封裝板2的凸部22的上面,接合上熱膨脹率比底層封裝板2的材料大之構件。Therefore, in order to offset the warp to reduce the amount of warpage, a member having a thermal expansion coefficient larger than that of the underlying package board 2 can be joined to the upper surface of the convex portion 22 of the underlying package board 2.

另一方面,在構成散熱器4之材料的熱膨脹率比構成底層封裝板2的安裝面21(平板部)之材料的熱膨脹率小之情況,相反地,散熱器4的收縮量會比底層封裝板2小,所以底層封裝板2會翹曲成兩端部變得較高之形態。On the other hand, in the case where the thermal expansion coefficient of the material constituting the heat sink 4 is smaller than the thermal expansion coefficient of the material constituting the mounting surface 21 (flat plate portion) of the underlying package board 2, conversely, the shrinkage amount of the heat sink 4 is lower than that of the underlying package. Since the board 2 is small, the underlying package board 2 is warped so that both ends become higher.

因此,為了將此翹曲抵銷以減低翹曲量,可在底層封裝板2的凸部22的上面,接合上熱膨脹率比底層封裝板2的材料小之材料。Therefore, in order to offset this warpage to reduce the amount of warpage, a material having a thermal expansion coefficient smaller than that of the underlying package board 2 may be bonded to the upper surface of the convex portion 22 of the underlying package board 2.

另外,由於接合時之溫度梯度,可能會發生底層封裝板2的下部側的溫度比上部側高之情況等,使得下部的熱膨脹量比上部大之情況,在此情況,利用熱膨脹率比較小的構件來構成凸部22,就可減低翹曲量。Further, due to the temperature gradient at the time of bonding, the temperature of the lower side of the underlying package board 2 may be higher than that of the upper side, and the amount of thermal expansion of the lower portion may be larger than that of the upper portion. In this case, the coefficient of thermal expansion is relatively small. By forming the convex portion 22 by the member, the amount of warpage can be reduced.

接著,參照第12圖來說明本發明實施例1之雷射二極體元件之在組裝工序中的效果。Next, the effect of the laser diode element of the first embodiment of the present invention in the assembly process will be described with reference to FIG.

第12圖係顯示以焊料接合方式進行雷射二極體元件的組裝時的狀態之側面圖。Fig. 12 is a side view showing a state in which the laser diode element is assembled by solder bonding.

第12圖中顯示將筒夾(collet)6所把持的LD陣列1接合到載置於平台5上的底層封裝板2的安裝面21之狀態。Fig. 12 shows a state in which the LD array 1 held by the collet 6 is bonded to the mounting surface 21 of the underlying package board 2 placed on the stage 5.

將LD陣列1接合到底層封裝板2時,係如第12圖所示,將底層封裝板2配置固定在平台5上,並使LD陣列1把持於筒夾6的下面,而相對於底層封裝板2的安裝面21使LD陣列1到達定位後,一邊將LD陣列1壓接到塗佈有焊材(未圖示)之安裝面21,一邊從平台5及筒夾6兩側加熱而進行焊接。When the LD array 1 is bonded to the underlying package board 2, as shown in FIG. 12, the underlying package board 2 is fixedly mounted on the stage 5, and the LD array 1 is held under the collet 6 with respect to the underlying package. After the LD array 1 is positioned, the mounting surface 21 of the board 2 is pressed against the mounting surface 21 to which the solder material (not shown) is applied, and is heated from both sides of the stage 5 and the collet 6. welding.

此時,因筒夾6設有朝上下方向及水平方向可移動的機構(未圖示),所以較小型,熱容量比平台5小。At this time, since the collet 6 is provided with a mechanism (not shown) that is movable in the vertical direction and the horizontal direction, it is small in size and has a smaller heat capacity than the stage 5.

而且,筒夾6與平台5側相比,較為小型,不易搭載高輸出且大型的加熱器,所以溫度控制的主體大多設在熱容量較大、較大型且可搭載高輸出的加熱器之平台5側,故有平台5側與筒夾6側之間會產生溫度差之情形。Further, the collet 6 is smaller than the platform 5 side, and it is difficult to mount a heater having a high output and a large size. Therefore, the main body of the temperature control is often provided in a platform having a large heat capacity and a large heater capable of mounting a high output. On the side, there is a temperature difference between the side of the platform 5 and the side of the collet 6.

不過,如上述,即使是筒夾6與平台5之間有溫度差之情形,也因為底層封裝板2的凸部22,與屬於為和LD陣列1的接合面(透過LD陣列1而與筒夾6相接)之安裝面21相比,向上方之熱的流動較小,所以凸部22的上下的溫度差比接合有LD陣列1之安裝面21小,可減輕由於熱膨脹量的差所造成之形變。However, as described above, even if there is a temperature difference between the collet 6 and the stage 5, because the convex portion 22 of the underlying package board 2, and the joint surface belonging to the LD array 1 (through the LD array 1 and the barrel) Since the flow of the upward heat is smaller than the mounting surface 21 of the clip 6 in contact with each other, the temperature difference between the upper and lower sides of the convex portion 22 is smaller than the mounting surface 21 to which the LD array 1 is bonded, and the difference in thermal expansion amount can be reduced. Caused by the deformation.

如以上所述,根據本發明之實施例1(第1至第12圖),在具備有:具有複數個發光點(發光部)11之LD陣列(雷射二極體陣列)1、以及具有用來搭載LD陣列1的安裝面21之底層封裝板2之雷射二極體元件中,在安裝面21的端部之未搭載LD陣列1的部份設置凸部22,所以可減低底層封裝板2與LD陣列1的翹曲量,可使從發光點11的分佈的設計值偏離之偏差量變小。As described above, according to the first embodiment (first to twelfth drawings) of the present invention, an LD array (laser diode array) 1 having a plurality of light-emitting points (light-emitting portions) 11 is provided, and In the laser diode element of the underlying package board 2 on which the mounting surface 21 of the LD array 1 is mounted, the convex portion 22 is provided at the end portion of the mounting surface 21 where the LD array 1 is not mounted, so that the underlying package can be reduced. The amount of warpage of the board 2 and the LD array 1 can make the amount of deviation from the design value of the distribution of the light-emitting points 11 small.

同時,可迴避使底層封裝板2的厚度增加之情況所會發生之熱阻的增加。At the same time, an increase in thermal resistance which occurs when the thickness of the underlying package board 2 is increased can be avoided.

再者,根據本發明之實施例1(第9及第10圖),沿著複數個發光點11的排列方向(長邊方向)之凸部22的長度(11 mm),係設定為比垂直於排列方向的方向之凸部22的寬度w(0.3至1.0 mm)長,所以可減低底層封裝板2及LD陣列1之在對於發光點11的分佈有較大影響的方向(排列方向)之翹曲量。Further, according to the first embodiment (the ninth and tenth drawings) of the present invention, the length (11 mm) of the convex portion 22 along the arrangement direction (longitudinal direction) of the plurality of light-emitting points 11 is set to be vertical. Since the width w (0.3 to 1.0 mm) of the convex portion 22 in the direction of the alignment direction is long, the direction (arrangement direction) of the underlying package board 2 and the LD array 1 which has a large influence on the distribution of the light-emitting point 11 can be reduced. The amount of warpage.

藉此,就可使從發光點11的分佈的設計值偏離之偏差量變小,同時可抑制熱阻之上昇。Thereby, the amount of deviation from the design value of the distribution of the light-emitting points 11 can be made small, and the increase in the thermal resistance can be suppressed.

再者,根據本發明之實施例1,底層封裝板2的安裝面21係由平板狀構件所構成,凸部22係藉由將楊氏模數比該平板狀構件高之另外的構件接合在平板狀構件21之上而構成,所以抑制翹曲量的效果會變得更大。Furthermore, according to the first embodiment of the present invention, the mounting surface 21 of the underlying package board 2 is constituted by a flat member, and the convex portion 22 is joined by another member having a Young's modulus higher than the flat member. Since the flat member 21 is formed above, the effect of suppressing the amount of warpage becomes larger.

此外,在將第二構件接合於安裝面21的正下方之情況,構成凸部22之另外的構件的熱膨脹率,係設定為比構成安裝面21(平板狀部件)之材料的熱膨脹率大之值,且接合於底層封裝板2的正下方之第二構件的熱膨脹率,係設定為比安裝面21(平板狀構件)的熱膨脹率大之值。Further, when the second member is joined directly below the mounting surface 21, the coefficient of thermal expansion of the other member constituting the convex portion 22 is set to be larger than the thermal expansion coefficient of the material constituting the mounting surface 21 (flat member). The value of the coefficient of thermal expansion of the second member directly joined to the underlying package board 2 is set to be larger than the coefficient of thermal expansion of the mounting surface 21 (flat member).

如此,在接合於底層封裝板2的正下方之第二構件的熱膨脹率比底層封裝板2之材料的熱膨脹率大之情況,在接合後之冷卻時,接合於底層封裝板2的正下方之第二構件雖然會收縮得比底層封裝板2大,而成為底層封裝板2的中心部向上方偏移而翹曲之形態,但藉由在底層封裝板2的上部接合上熱膨脹率比底層封裝板2大之另外的構件來作為凸部22,就可將在安裝面21上的翹曲量抵銷而予以減少。Thus, in the case where the thermal expansion coefficient of the second member directly under the underlying package board 2 is larger than the thermal expansion coefficient of the material of the underlying package board 2, it is bonded directly under the underlying package board 2 during cooling after bonding. Although the second member is shrunk larger than the underlying package board 2 and becomes a shape in which the center portion of the underlying package board 2 is shifted upward and warped, the thermal expansion ratio is higher than that of the underlying package by bonding the upper portion of the underlying package board 2. By using the other member of the plate 2 as the convex portion 22, the amount of warpage on the mounting surface 21 can be offset and reduced.

另外,在將第二構件接合於安裝面21的正下方之情況,構成凸部22之另外的構件的熱膨脹率,係設定為比構成安裝面21(平板狀構件)之材料的熱膨脹率小之值,且接合於底層封裝板2的正下方之第二構件的熱膨脹率,係設定為比安裝面21(平板狀構件)的熱膨脹率小之值。Further, when the second member is joined directly under the mounting surface 21, the coefficient of thermal expansion of the other member constituting the convex portion 22 is set to be smaller than the thermal expansion coefficient of the material constituting the mounting surface 21 (flat member). The value of the thermal expansion coefficient of the second member directly joined to the underlying package board 2 is set to be smaller than the thermal expansion coefficient of the mounting surface 21 (flat member).

如此,在接合於底層封裝板2的正下方之第二構件的熱膨脹率比底層封裝板2之材料的熱膨脹率小之情況,在接合後之冷卻時,與上述的相反,底層封裝板2雖然會收縮得比接合於底層封裝板2的正下方之第二構件大,而成為底層封裝板2的中心部向下方偏移(底層封裝板2的兩端部向上方偏移)之形態,但藉由在底層封裝板2的上部接合上熱膨脹率比底層封裝板2小之另外的構件來作為凸部22,就可將在安裝面21的翹曲量抵銷而予以滅少。Thus, in the case where the thermal expansion coefficient of the second member directly under the underlying package board 2 is smaller than the thermal expansion coefficient of the material of the underlying package board 2, in the case of cooling after bonding, contrary to the above, the underlying package board 2 is The contraction is larger than the second member directly under the underlying package board 2, and the center portion of the underlying package board 2 is shifted downward (the both end portions of the underlying package board 2 are shifted upward), but By bonding the other member having a lower thermal expansion coefficient than the underlying package board 2 to the upper portion of the underlying package board 2 as the convex portion 22, the amount of warpage on the mounting surface 21 can be offset to be eliminated.

1...LD陣列(雷射二極體陣列)1. . . LD array (laser diode array)

2...底層封裝板2. . . Bottom package board

3...焊材3. . . Welding consumables

4...散熱器4. . . heat sink

5...平台5. . . platform

6...筒夾6. . . Collet

11...發光點11. . . Luminous point

21...安裝面twenty one. . . Mounting surface

22...凸部twenty two. . . Convex

第1圖係顯示本發明實施例1之雷射二極體元件(半導體雷射元件)之接合前與接合後的各狀態之斜視圖。(實施例1)Fig. 1 is a perspective view showing respective states before and after joining of a laser diode element (semiconductor laser element) according to Embodiment 1 of the present invention. (Example 1)

第2圖係顯示本發明實施例1之雷射二極體元件之分解側面圖。(實施例1)Fig. 2 is an exploded side view showing the laser diode element of the first embodiment of the present invention. (Example 1)

第3圖係顯示本發明實施例1之雷射二極體元件的接合狀態以及熱流動之側面圖。(實施例1)Fig. 3 is a side view showing the joined state and heat flow of the laser diode element of the first embodiment of the present invention. (Example 1)

第4圖係顯示根據本發明實施例1之底層封裝板的凸部的第一變形例之斜視圖及平面圖。(實施例1)Fig. 4 is a perspective view and a plan view showing a first modification of the convex portion of the underlying package board according to Embodiment 1 of the present invention. (Example 1)

第5圖係顯示根據本發明實施例1之底層封裝板的凸部的第二變形例之斜視圖及平面圖。(實施例1)Fig. 5 is a perspective view and a plan view showing a second modification of the convex portion of the underlying package board according to Embodiment 1 of the present invention. (Example 1)

第6圖係顯示根據本發明實施例1之底層封裝板的凸部的第三變形例之斜視圖及平面圖。(實施例1)Fig. 6 is a perspective view and a plan view showing a third modification of the convex portion of the underlying package board according to Embodiment 1 of the present invention. (Example 1)

第7圖係顯示根據本發明實施例1之底層封裝板的凸部的第四變形例之斜視圖及平面圖。(實施例1)Fig. 7 is a perspective view and a plan view showing a fourth modification of the convex portion of the underlying package board according to Embodiment 1 of the present invention. (Example 1)

第8圖係顯示根據本發明實施例1之底層封裝板的凸部的第五變形例之斜視圖及平面圖。(實施例1)Fig. 8 is a perspective view and a plan view showing a fifth modification of the convex portion of the underlying package board according to Embodiment 1 of the present invention. (Example 1)

第9圖係顯示根據本發明實施例1之使用於翹曲量計算之雷射二極體元件的各部的實際尺寸之分解斜視圖。(實施例1)Fig. 9 is an exploded perspective view showing the actual dimensions of the respective portions of the laser diode element used for the calculation of the amount of warpage according to Embodiment 1 of the present invention. (Example 1)

第10圖係顯示在第9圖的構成中假設有上下的溫度梯度之情況之凸部寬度與形變(翹曲量)大小的關係(計算例)之說明圖。(實施例1)Fig. 10 is an explanatory view showing a relationship (calculation example) of the relationship between the width of the convex portion and the magnitude of the deformation (the amount of warpage) in the case where the temperature gradient of the upper and lower sides is assumed in the configuration of Fig. 9. (Example 1)

第11圖係顯示在第9圖的構成中假設有上下的溫度梯度之情況之凸部高度與形變(翹曲量)大小的關係(計算例)之說明圖。(實施例1)Fig. 11 is an explanatory view showing a relationship (calculation example) of the relationship between the height of the convex portion and the magnitude of the deformation (the amount of warpage) in the case where the temperature gradient of the upper and lower sides is assumed in the configuration of Fig. 9. (Example 1)

第12圖係顯示以焊錫接合方式進行本發明實施例1之雷射二極體元件的組裝時狀態之側面圖。(實施例1)Fig. 12 is a side view showing a state in which the laser diode element of the first embodiment of the present invention is assembled by solder bonding. (Example 1)

1...LD陣列(雷射二極體陣列)1. . . LD array (laser diode array)

2...底層封裝板2. . . Bottom package board

11...發光點11. . . Luminous point

21...安裝面twenty one. . . Mounting surface

22...凸部twenty two. . . Convex

Claims (1)

一種雷射二極體元件,具備有:雷射二極體陣列,具有複數個發光部;以及底層封裝板,具有用來搭載前述雷射二極體陣列的安裝面,其特徵在於:在前述安裝面的端部之未搭載有前述雷射二極體陣列的部份設有凸部,沿著前述複數個發光部的排列方向之前述凸部的長度,係設定為比垂直於前述排列方向之方向的前述凸部的寬度還長,前述底層封裝板的安裝面,係由平板狀部件所構成,前述凸部係藉由經過將楊氏模數比前述平板狀構件高之其它構件接合在前述平板狀構件之上之步驟之後,經過切削或研磨前述安裝面之整形步驟而構成者,前述雷射二極體元件更具備有接合於前述安裝面的正下方之第二構件,構成前述凸部之其它構件的熱膨脹率,係設定為比構成前述安裝面之材料的熱膨脹率大之值,前述第二構件的熱膨脹率,係設定為比構成前述安裝面之材料的熱膨脹率大之值。 A laser diode device comprising: a laser diode array having a plurality of light emitting portions; and an underlying package board having a mounting surface for mounting the laser diode array, wherein: a portion of the end of the mounting surface on which the laser diode array is not mounted is provided with a convex portion, and the length of the convex portion along the direction in which the plurality of light emitting portions are arranged is set to be perpendicular to the arrangement direction. The width of the convex portion in the direction is also long, and the mounting surface of the underlying package board is composed of a flat member, and the convex portion is joined by another member having a Young's modulus higher than the flat member. After the step of forming the flat member, the step of cutting or polishing the mounting surface is performed, and the laser diode element further includes a second member directly joined to the mounting surface to form the convex portion. The coefficient of thermal expansion of the other member is set to be larger than the coefficient of thermal expansion of the material constituting the mounting surface, and the coefficient of thermal expansion of the second member is set to be larger than the ratio Thermal expansion coefficient of the material of the surface of a large value.
TW099106563A 2009-05-12 2010-03-08 Laser diode element TWI411183B (en)

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