JPH06310617A - Sub-mount for semiconductor laser element - Google Patents

Abstract

PURPOSE:To provide a sub-mount that, without causing an electrical short circuit, can die-bond a semiconductor laser element with high precision in position. CONSTITUTION:Respective laser bonding parts 2a1-2a4 of a sub-mount 2 are formed into projecting sections, or a trapezoid shape in its cross section, wherein the width at the top face is smaller than that at a laser-bonding-face, and on the top faces of the projecting sections and the top end parts of inclined faces that follow them, electrode patterns 16a-16d and solders 17a-17d are formed in this order.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a submount used for die bonding of a semiconductor laser array element having a plurality of light emitting points or a semiconductor laser element having a single light emitting point, and more particularly to a semiconductor laser array element or a semiconductor laser. The present invention relates to a submount capable of adhering elements with high positional accuracy and without causing unnecessary short circuit at that time.

[0002]

2. Description of the Related Art FIG. 8 is a perspective view showing a structure of a submount used for die bonding a semiconductor laser array element, which is formed by arranging a plurality of conventional lasers in parallel with each other through a separation groove. Yes, in the figure, 8 is, for example, S
Submounts made of iC, 6a to 6d are electrode patterns formed on the submounts, and 7a to 7d are solder materials formed on the electrode patterns 6a to 6d, respectively.
In the figure, WS10 and WS40 indicate the widths of the electrode patterns 6a and 6d at both ends, WS1 and WS4 indicate the widths of the solder materials 7a and 7d, respectively, and WS2 indicates the electrode pattern 6b.
And the width of the solder material 7b are shown. WS3 is the electrode pattern 6c
And the width of the solder material 7c are shown.

FIG. 9 is a perspective view showing a state in which a semiconductor laser array element is die-bonded to a radiator using the conventional submount shown in FIG.
The same reference numerals as those in FIG. 8 indicate the same or corresponding portions. Here, each of the lasers forming the semiconductor laser array element 3 is soldered on the electrode patterns 6a to 6d formed on the upper surface of the submount 8 by the solder materials 7a to 7d. Then, the submount 8 is further bonded to the metal block 1 as a heat radiator. Then, after this, the semiconductor laser array element 3
And gold wires 5a to 5e are wire-bonded on the electrode patterns 6a to 6d, respectively. In addition, 4a-4 in the figure
Reference numeral d denotes an active region (light emitting point) of each laser forming the semiconductor laser array element.

By the way, in FIGS. 8 and 9, the conventional submount 8 is made of a flat plate-like member, and the electrode patterns 6a to 6d formed on the upper surface of the submount 8 are used.
Are separated by a predetermined distance from each other and have respective widths WS10, WS
2, WS3, WS40 are formed so as to be wider than the widths WL1, WL2, WL3, WL4 of the bonding surface of the corresponding laser of the semiconductor laser array element 3, and similarly, the solder materials 7a, 7b,
The widths WS1, WS2, WS3 and WS4 of 7c and 7d are also formed to be wider than the widths WL1, WL2, WL3 and WL4 of the bonding surface of the corresponding laser of the semiconductor laser array element 3. This is because, in the work of mounting the semiconductor laser array element 3 on the submount, even if the mounting position is slightly deviated from the predetermined position, the laser on the electrode pattern of the semiconductor laser array element 3 is to be bonded to the electrode pattern. This is to ensure reliable adhesion to the.

[0005]

As described above, the conventional submount for a semiconductor laser array element is composed of a plate-shaped member having a flat upper surface, and the semiconductor laser array element at the time of die bonding. In consideration of the positional deviation of the placement position during the placement work of, the width of the electrode pattern and the width of the solder material formed on the upper surface are
The width is larger than the lateral width of the bonding surface of each laser of the semiconductor laser array element.

However, when the semiconductor laser array element is die-bonded to the submount having such a structure, as shown in FIG. 10, due to the influence of the pressure contact force, the amount of solder material, the mounting position, etc. Has risen to the side of each laser of the semiconductor laser array element 3, and the solder material 7b adheres to the side wall surface 3a of the semiconductor laser array element 3, causing an electrical short circuit between them. In addition, FIG.
As shown in FIG. 3, there is a problem that the solder materials 7b and 7c on the adjacent electrode patterns 6b and 6c spread laterally and come into contact with each other, causing an electrical short circuit between them. Further, as shown in FIG. 12, when the semiconductor laser array element 3 is largely displaced from the predetermined mounting position, each laser of the semiconductor laser array element 3 (for example, a laser having an active region 4b in the figure). However, it should also be joined to the solder material (the solder material 7c on the electrode pattern 6c in the figure) adjacent to the solder material (the solder material 7b on the electrode pattern 6b in the figure) that should not be joined, There was a problem that a short circuit occurred during this time and the bonding strength was also reduced.

Although the semiconductor laser array device has been described here, the same problem occurs when the semiconductor laser device having one active region (light emitting point) is die-bonded.

The present invention has been made in order to solve the above-mentioned problems, and the semiconductor laser array element or the semiconductor laser element can be die-bonded with high positional accuracy, and an unnecessary electric short circuit occurs during the die-bonding. It is intended to get a submount that does not exist.

[0009]

A submount for a semiconductor laser device according to the present invention has a lateral width of a flat surface on which an individual laser constituting a semiconductor laser array device or a semiconductor laser having one light emitting point is mounted. Is smaller than the lateral width of the laser, an inclined surface inclined downward is formed next to this, and an electrode pattern and a solder material are formed on the flat surface and the inclined surface that follows the flat surface.

Further, the semiconductor laser element submount according to the present invention is tilted downward next to an individual laser constituting the semiconductor laser array element or a flat surface on which a semiconductor laser having one light emitting point is mounted. The inclined surface is formed, and the electrode pattern and the solder material are formed on the flat surface and the inclined surface subsequent thereto such that the lateral width on the flat surface is smaller than the lateral width of the bonding surface of the laser.

[0011]

According to the present invention, the width of the portion of the electrode pattern to which the laser is adhered is made smaller than the width of the surface to which the laser is attached, and the other portions of the electrode pattern are inclined downward from the portion to which the laser is adhered. Therefore, at the time of die bonding, even if the laser is pressed against the molten solder material on the electrode pattern, the molten solder material does not rise to the side wall of the laser and the short circuit between the solder material and the laser at this portion is prevented. Moreover, of the melted solder material, if it sticks out to a portion other than directly under the laser bonding surface, it will flow downward along the inclined surface of the electrode pattern, and the solder material will stick to the electrode pattern. Since it wets well and is poorly wetted to the submount body, it will be held at the end of the electrode pattern, and it will be held between the adhesive parts of adjacent lasers. It can be prevented shorting caused by contact with the solder.

Further, since the lateral width of the portion of the electrode pattern to which the laser is adhered is made smaller than the lateral width of the adhering surface of the laser, the surface of the solder material melted and liquefied at this portion of the electrode pattern. Due to the tension, the laser that contacts this solder material moves to the center position of the solder material, and even if the laser mounting position deviates from the predetermined position to a certain position, that is, the center of the solder material. And the center of the laser can be soldered together.

[0013]

EXAMPLES Example 1. 1 is a perspective view showing a configuration of a submount according to a first embodiment of the present invention, and FIG. 5 is a perspective view showing a state in which a semiconductor laser array element is die-bonded to a heat radiator using the submount shown in FIG. In these figures, the same reference numerals as those in FIG. 8 indicate the same or corresponding portions, 2 is a submount, 2a1 to 2a4 are laser bonding portions, 2b1 to 2b4 are wire bonding portions,
16a to 16d are electrode patterns, 17a to 17d are solder materials, 21 is a groove having a V-shaped cross section (hereinafter, simply referred to as V-shaped groove), and 21a is a groove (recess).

As shown in these figures, in the submount 2 of this embodiment, the laser bonding portions 2a1 to 2a4 for each laser of the semiconductor laser array element 3 and the wire bonding portions 2b1 to 2b4 subsequent thereto are V-shaped. The groove 21 and the groove (recess) 21a are separated from each other, and are formed so that their cross-sectional shapes are trapezoidal. In the figure, since the wire bonding portions 2b1 and 2b4 on both sides have no adjacent wire bonding portions on the outer sides thereof, no groove (recess) is formed on one side thereof. Here, the cross-sectional shape corresponding to each laser of the semiconductor laser array element 3 is the apex of the laser bonding portions 2a1 to 2a4 each having a trapezoidal convex portion, that is, the width Ws of the bonding surface with the laser to be bonded.
The widths a, Wsb, Wsc, and Wsd are formed to be smaller than the lateral widths WLa, WLb, WLc, and WLd of the bonding surface of each laser of the semiconductor laser array element 3. Then, the tops of the laser bonding portions 2a1 to 2a4 each of which is composed of a convex portion having a trapezoidal sectional shape of the submount 2 and a part of an inclined surface following the peak, and
Electrode patterns 16a to 16d are formed on the upper surfaces of the wire bonding portions 2b1 to 2b4.
Solder materials 17a to 17d are formed on a to 16d, respectively.

The process of die-bonding the semiconductor laser array element to the submount 2 will be described below. First, the electrode patterns 16a to 16a to the laser bonding portions 2a1 to 2a4, respectively, each of which has a trapezoidal convex cross-sectional shape of the submount 2.
After forming 16d and subsequently forming solder materials 17a to 17d, the active regions (light emitting points) 4a to 4d of the respective lasers are located below, and the bonding surface of each laser corresponds to the corresponding electrode pattern 1
The semiconductor laser array element 3 is placed on the submount 2 so as to be positioned on 6a to 16d, and the temperature is raised in this state,
The solder materials 17a to 17d are melted. At this time, the lateral widths Wsa, Wsb, of the upper surfaces of the convex laser-bonded portions 2a1 to 2a4,
The widths Wsc and Wsd (widths of the electrode patterns 16a to 16d) are smaller than the widths WLa, WLb, WLc, and WLd of the bonding surfaces of the corresponding lasers of the semiconductor laser array element 3, respectively, and the solder becomes molten and becomes liquid. Due to the surface tension of the materials 17a to 17d, the semiconductor laser array element 3 moves so that each laser becomes the most stable mounting position with respect to the convex laser bonding portions 2a1 to 2a4. That is, in each laser, the lateral widths of the upper surfaces of the laser bonding portions 2a1 to 2a4 corresponding to the active regions (light emitting points) 4a to 4d formed at the center thereof and each having a trapezoidal sectional shape Move to be centered in the direction. Then, in this state, when pressure is applied from above the element 3 to press the element 3 against the submount 2, the lateral widths Wsa, Wsb, Wsc, Wsd of the upper surfaces of the laser-bonded portions 2a1 to 2a4 composed of the convex portions.
Is narrower than the widths WLa, WLb, WLc, and WLd of the bonding surfaces of the lasers of the semiconductor laser array element 3, so that the molten solder materials 17a to 17d rise up as in the conventional case and the side surface of the element 3 is formed. 6, it spreads in the direction of the inclined surfaces of the laser bonding portions 2a1 to 2a4 formed of convex portions along the electrode patterns 16a to 16d formed on the inclined surfaces. Here, V-shaped groove 21
That is, since the portion of the convex laser-bonded portions 2a1 to 2a4 where the submount material is exposed as it is is not wettable with the solder material, the solder materials 17a to 17d do not spread to the submount surface. , Electrode pattern 16a-
It is held at the end of 16d. Therefore, the solder of the adjacent laser bonded portion in the V-shaped groove 21 does not come into contact with each other.

As described above, in the submount of this embodiment,
The laser bonding portion to which each laser of the semiconductor laser array element 3 is bonded is formed by a convex portion having a trapezoidal cross section separated by the V-shaped groove 21, and the upper surfaces of the laser bonding portions 2a1 to 2a4. Width Wsa, Wsb, Ws
Since c and Wsd are formed to be smaller than the lateral widths WLa, WLb, WLc, and WLd of the bonding surfaces of the lasers of the semiconductor laser array element 3, the laser bonding portions 2a1 to 2a4 have their upper surfaces and the inclined surfaces following them. Solder materials 17a-1 formed on the electrode metal patterns 16a-16d partially formed
Even when 7d is melted and the semiconductor laser array element 3 is pressure-welded, the solder materials 17a to 17d do not rise to the side surface of each laser of the semiconductor laser array element 3 and move downward along the slopes of the laser bonding portions 2a1 to 2a4. Spread and hold the electrode metal pattern at the ends of 16a-16d. Therefore, at the time of die bonding, the solder material does not come into contact with the side surface of each laser of the semiconductor laser array element and the solder material formed on the adjacent electrode pattern does not come into contact with each other, and an unnecessary short circuit as in the past is eliminated. be able to.

Further, since the horizontal width of the upper surfaces of the laser bonding portions 2a1 to 2a4 is smaller than the horizontal width of the bonding surface of each laser of the semiconductor laser array element 3, the solder material which is melted and becomes liquid is Each laser of the semiconductor laser array element 3 bonded on the solder material is attached to the laser bonding portion 2
The electrodes are moved to the most stable positions on the corresponding electrode patterns 16a to 16d formed on the upper surfaces of a1 to 2a4. Therefore, even if the mounting position of the semiconductor laser array element 3 is slightly deviated from the predetermined position, the semiconductor laser array element 3 is at the predetermined position, that is, the laser bonding portion having a convex center in the width direction of each laser. It is positioned and soldered so as to match the center in the width direction.

Example 2. 2 is a perspective view showing a configuration of a submount according to a second embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 1 denote the same or corresponding parts,
2A is a submount, 17a 'and 17d' are solder materials,
26a and 26d are electrode patterns. That is, in the submount according to the first embodiment shown in FIG. 1, all the adhesive portions of the laser are formed in a convex shape by forming grooves on both sides thereof, but in this submount 2A, the laser adhesive portion on the outermost side is formed. 2a1,
2a4 does not have grooves formed on both sides thereof, but a V-shaped groove 21 is formed only on one side thereof so that the other laser bonded portions 2a2, 2a2
separated from a3. Here, the laser bonding portion 2a
2, 2a3 have lateral widths Wsb and Wsc similar to those in FIG. 1 and have a lateral width W of the bonding surface of the corresponding laser of the semiconductor laser array element.
It is smaller than Lb and WLc, and it is the adhesive part 2a of the laser.
In 1 and 2a4, the lateral widths Wsa1 and Wsd1 of the electrode patterns 26a and 26d formed on the flat surface are smaller than the lateral widths WLa and WLd of the bonding surface of the semiconductor laser array element 3.

Although not shown here, the semiconductor laser array element 3 is die-bonded to the metal block 1 as a heat radiator by using this submount 2A in the same manner as in FIG.

Also in the submount of this embodiment, the outermost laser bonding portions 2a1 and 2a4 are formed flat, but the lateral width Wsa1 of the electrode patterns 26a and 26d formed on the upper surface thereof is Wsd1 is the lateral width WL of the bonding surface of the laser to be bonded to the semiconductor laser array element
Since it is smaller than a and WLd, the same effect as that of the first embodiment can be obtained in any of the laser bonding portions 2a1 to 2a4 by the same operation as the submount of the first embodiment.

Example 3. 3 is a perspective view showing a configuration of a submount according to a third embodiment of the present invention. In the figure, the same reference numerals as those in FIG. 1 denote the same or corresponding parts,
2B is a submount, and 27a to 27d are solder materials. That is, in the submount of the first embodiment shown in FIG.
Solder materials 17a to 17d are formed on the entire areas of the electrode patterns 16a to 16d formed on the laser bonding portions 2a1 to 2a4. The submount 2B of this embodiment has a flat surface on the uppermost part of the electrode patterns 16a to 16d. The solder materials 27a to 27d are formed only on the.

Although not shown here, the semiconductor laser array element 3 is die-bonded to the metal block 1 as a heat radiator using this submount 2B in the same manner as in FIG.

Also in the submount of this embodiment, when the solder materials 17a to 17d are melted and the semiconductor laser array element 3 is pressure-welded, the molten solder material 17a is melted like the submount of the first embodiment. .About.17d are held at the end portions of the electrode patterns 16a to 16d, and in any of the laser bonding portions 2a1 to 2a4, the same action as that of the submount of the first embodiment is performed, and the same as in the first embodiment. The effect can be obtained.

In the submount of this embodiment, the groove (recess) 2 is formed outside the outermost laser bonding portions 2a1 and 2a4.
1a was formed, but this groove was not provided similarly to the submount of Example 2, and the electrode pattern 16 formed on the flat surface was formed.
The widths of the a and 16d and the solder materials 27a and 27d may be formed smaller than the width of the bonding surface of the laser.

Example 4. 4 is a perspective view showing a configuration of a submount according to Embodiment 4 of the present invention. In the figure, the same reference numerals as those in FIG. 1 denote the same or corresponding parts,
2C is a submount, 2b is a sawtooth groove, 36a to 36
d is an electrode pattern, and 37a to 37d are solder materials.
That is, in the submount of the first embodiment shown in FIG. 1, the laser bonding portions 2a1 to 2a4 are separated by the V-shaped groove 21, but in the submount 2C of this embodiment, the laser bonding portions 2a1 to 2a4 are separated from each other. The grooves 21b having a saw-tooth cross section are separated, and the electrode patterns 36a to 36d and the solder materials 37a to 27d are formed so as to cover the flat surface and the upper end of the inclined surface subsequent thereto. Here, the electrode pattern 36d and the solder material 37d formed on the one outermost laser bonding portion 2a4 have a groove (recess) 21a at the end thereof.
Is formed so as to extend to the bottom surface of, but this is because the laser bonding portion is not formed on the outside thereof. here,
In the submount of this embodiment, the sawtooth-shaped groove 21 is formed by pressing the semiconductor laser array element 3 during die bonding.
Solder material 3 melted at the end of the vertically raised part of b
7a to 37d tend to rise to some extent on the side wall of the laser of the semiconductor laser array element 3, but the solder materials 37a to 37d
By increasing the length of the portion formed along the inclined surface of 7d, a large amount of force that flows downward along the inclined surface acts on the molten solder material. No short circuit will occur.

Although not shown here, the semiconductor laser array element 3 is die-bonded to the metal block 1 as a heat radiator using this submount 2C in the same manner as in FIG.

As described above, also in the submount of this embodiment, any of the laser bonding portions 2a1 to 2a4 can obtain the same effect as that of the first embodiment by the same operation as the submount of the first embodiment. it can. Further, in the above Examples 1 to 4, the formation of the electrode pattern and the solder material is
It was obtained by depositing the electrode metal and solder on the entire surface and then patterning the obtained metal film. However, in the submount of this embodiment, since the separation groove is the sawtooth groove 21b, the sawtooth shape is used. By depositing the electrode metal and solder in this order from the direction perpendicular to the inclined surface of the groove 21b, the sawtooth-shaped groove 21 can be formed without a patterning process.
The electrode pattern 36 is formed without adhering the electrode metal and solder on the wall surface that rises vertically to the deep part of the inclined surface of b.
a to 36d and solder materials 37a to 37d can be formed.

In the submount of this embodiment, the lateral width Wsa of the upper surface of the outermost laser bonding portion 2a1 is smaller than the lateral width of the laser bonding surface. However, the submount of the second embodiment shown in FIG. Similar to 2A, laser bonded portion 2a1
The width of the upper surface is made larger than the width of the bonding surface of the laser, and the width of the electrode pattern and the solder material formed on the upper surface is made smaller than the width of the bonding surface of the laser without forming the groove 21a on the outer side. However, the same effect can be obtained.

Example 5. FIG. 7 is a perspective view showing a state in which a semiconductor laser device having a single light emitting point is die-bonded to a heat radiator using a submount according to a fifth embodiment of the present invention. In the figure, the same symbols as those in FIG. 5 are the same. 2D is a submount, 2a is a laser bonding portion, 2b is a wire bonding portion, and 3b is a semiconductor laser element. That is, the submount of the present embodiment is formed for the semiconductor laser device 3b having one light emitting point, and the laser bonding portion 2a of the submount 2D is the same as the submounts of the first to fourth embodiments. The cross-sectional shape is formed by a trapezoidal convex portion, and the lateral width of the upper surface thereof is smaller than the lateral width of the bonding surface of the semiconductor laser element 3b. Then, the electrode pattern 16a and the solder material 17a are formed in this order so as to cover the upper surface and the upper end of the inclined surface that follows the upper surface.

Also in the submount of this embodiment, the molten solder material 17a does not rise to the side wall surface of the semiconductor laser element 3b having one light emitting point, as in the first to fourth embodiments. , Semiconductor laser device 3b
However, due to the surface tension of the molten solder material 17a, the center of the solder material, that is, the light emitting point 4a is positioned so as to overlap with the center of the solder material, so that accurate die bonding can be performed without causing positional displacement.

In this embodiment, the laser bonded portion 2a is a convex portion in which the width of the upper surface is smaller than the width of the bonded surface of the laser, and both of the two side wall surfaces are formed in an inclined surface shape. However, the same effect can be obtained even if the laser bonding portion 2a is a convex portion in which one side wall surface is vertically cut up and the other side wall surface is formed into an inclined surface shape as shown in FIG. Can be obtained. At this time, it is not always necessary to make the width of the upper surface of the laser bonding portion smaller than the width of the bonding surface of the laser. The width of this upper surface is made larger than the width of the bonding surface of the laser, and the laser bonding portion 2a1 shown in FIG. Similar to the above, if the lateral width of the electrode pattern and the solder material formed on the upper surface is smaller than the lateral width of the bonding surface of the laser, the same effect can be obtained.

[0032]

As described above, according to the submount for a semiconductor laser device of the present invention, the lateral width of the electrode pattern at the portion where the laser is directly bonded in the laser bonded portion is smaller than the lateral width of the bonded surface of the laser. Since it is made small, the solder material melted on the electrode pattern does not rise to the side wall of the laser even when the laser is pressure-contacted during die bonding, and it is possible to prevent a short circuit between the solder material and the laser at this portion. , Due to the surface tension of the solder material melted and liquefied at this part, the laser bonded to this solder material moves to the center position of the solder material,
Even if the mounting position of the laser deviates slightly from the predetermined position, the center of the laser should overlap with the center position of the solder material.
This has the effect of enabling accurate positioning.

Further, since the electrode pattern is formed so as to cover the uppermost surface of the convex portion having a trapezoidal sectional shape of the submount main body and the upper end portion of the inclined surface subsequent thereto, among the molten solder materials, Anything that spills out to a portion other than directly below the laser bonding surface will flow downward along the side wall consisting of the sloped surface of the trapezoidal convex portion, and be held at the terminal end of the electrode pattern. There is an effect that a short circuit due to contact of solder between the laser adhesive portions can be prevented.

[Brief description of drawings]

FIG. 1 is a perspective view showing the structure of a submount for a semiconductor laser array device according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing a configuration of a submount for a semiconductor laser array device according to a second embodiment of the present invention.

FIG. 3 is a perspective view showing a configuration of a submount for a semiconductor laser array device according to a third embodiment of the present invention.

FIG. 4 is a perspective view showing a configuration of a submount for a semiconductor laser array device according to Example 4 of the present invention.

5 is a perspective view showing a state in which a semiconductor laser array element is die-bonded to a radiator using the submount shown in FIG.

FIG. 6 is an enlarged view showing an adhesive portion between a semiconductor laser array element and a submount in FIG.

FIG. 7 is a perspective view showing a state in which a semiconductor laser device having a single light emitting point is die-bonded to a heat radiator using a submount according to a fifth embodiment of the present invention.

FIG. 8 is a perspective view showing a configuration of a conventional submount for a semiconductor laser array device.

FIG. 9 is a perspective view showing a state in which a semiconductor laser array element is die-bonded to a heat radiator using a conventional submount.

FIG. 10 is an enlarged view showing an adhesive portion between a semiconductor laser array element and a submount in FIG.

FIG. 11 is an enlarged view showing a bonding portion between the semiconductor laser array element and the submount in FIG.

FIG. 12 is an enlarged view showing an adhesive portion between a semiconductor laser array element and a submount in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 metal block 2, 2A, 2B, 2C, 2D submount 2a, 2a1 to 2a4 laser bonding part 2b, 2b1 to 2b4 laser bonding part 3 semiconductor laser array element 3a laser side surface 3b semiconductor laser device 4a having one light emitting point 4a, 4b, 4c, 4d Active region (light emitting point) 5a, 5b, 5c, 5d, 5e Gold wire 6a-6d, 16a-16d, 26a, 26d, 36a
-36d Electrode patterns 7a-7d, 17a-17d, 17a ', 17d', 2
7a to 27d, 37a to 37d Solder material 21 V-shaped groove in cross section 21a Groove (recess) 21b Saw-tooth groove in cross section

Claims (8)

[Claims] 1. A submount for die-bonding a semiconductor laser array element in which a plurality of lasers are arranged side by side through a separation groove to a heat radiator, the lateral width of the upper surface of which is smaller than the lateral width of the bonding surface of the laser. Is also small
Further, a plurality of laser mount portions, each of which has a trapezoidal cross-sectional shape and are formed so that at least one of the side wall surfaces thereof is an inclined surface, are formed corresponding to each laser of the plurality of lasers. A submount for a semiconductor laser device, wherein an electrode pattern and a solder material are formed on the upper surface of each of the parts and on the inclined surface following the upper surface. 2. The submount for a semiconductor laser device according to claim 1, wherein each of the plurality of laser mount portions has inclined side surfaces on both side surfaces thereof, and the electrode pattern and the solder material are A submount for a semiconductor laser device, characterized in that the submount is formed on the upper surface of each laser mount portion and a part of both of the inclined surfaces following the laser mount portion so as not to contact between the adjacent laser mount portions. 3. The submount for a semiconductor laser device according to claim 2, wherein the mount portion located on the outermost side of the plurality of laser mount portions has a width of an upper surface larger than a bonding surface of the laser, and , The inclined surface is formed only on the inner side following the upper surface, and the lateral width of the electrode pattern and the solder material formed on the upper surface of the mount portion located on the outermost side is smaller than the lateral width of the bonding surface of the laser. Submount for semiconductor laser device. 4. The submount for a semiconductor laser element according to claim 1, wherein each of the plurality of laser mount portions has a side wall surface on one side thereof which is vertically cut and a side wall surface on the other side is inclined. A submount for a semiconductor laser device, wherein the electrode pattern and the solder material are formed so as to be a surface, and the electrode pattern and the solder material are formed on an upper surface of the laser mount portion and a part of an inclined surface following the upper surface. 5. The submount for a semiconductor laser device according to claim 4, wherein the mount portion located on the outermost side of one of the plurality of laser mount portions has a width of the upper surface larger than the bonding surface of the laser. A submount for a semiconductor laser device, wherein the lateral width of the electrode pattern and the solder material formed on the upper surface of the outermost mount portion is smaller than the lateral width of the bonding surface of the laser. 6. A submount for die-bonding a semiconductor laser device having one light emitting point to a radiator, the lateral width of the upper surface of which is smaller than the lateral width of the bonding surface of the laser device, and both side wall surfaces thereof. Has a trapezoidal-shaped laser mount section formed so as to form an inclined surface, and the laser mount section has an electrode pattern and a solder material formed on its upper surface and both of the inclined surfaces following it. A submount for a semiconductor laser device, which is characterized in that 7. A submount for die-bonding a semiconductor laser device having one light emitting point to a radiator, the lateral width of the upper surface of which is smaller than the lateral width of the bonding surface of the laser device, and the side wall surface thereof. One of the laser mounts has a trapezoidal cross-sectional shape, one of which is vertically cut and the other of which is an inclined surface. The laser mount is formed on the upper surface and the inclined surface that follows. A submount for a semiconductor laser device, characterized in that an electrode pattern and a solder material are formed. 8. A submount for die-bonding a semiconductor laser device having a single light emitting point to a radiator, the flat mount being a mounting region of the laser device and one of the flat surfaces following the flat surface. An inclined surface that inclines downward is formed, an electrode pattern and a solder material are formed on the flat surface and the inclined surface that follows the flat surface, and the lateral width of the electrode pattern and the solder material formed on the flat surface is the lateral width of the laser element. Submount for semiconductor laser device characterized by being smaller than