JP2009004760A - Semiconductor laser device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device, capable of inhibiting deterioration in laser characteristics and damages to the semiconductor laser element due to the correction of warpage from occurring, and equalizing the temperature distributions of generated heat in the semiconductor laser element. <P>SOLUTION: The semiconductor laser device 40 is provided with a semiconductor laser element 50 having warpage in the direction of the resonator, a (p) side electrode 115 formed on the surface of the concave side of the warpage of the semiconductor layer element 50, and a base 70 to which the convex side of the warpage of the semiconductor layer element 50. The semiconductor laser element 50 is so fixed to the base 70 that the distance between the convex side of the warpage and the base 70 varies with the warpage of the semiconductor laser element 50 along the direction of the resonator. Furthermore, a wire bonding portion 115a is provided in the vicinity of a portion of the (p) side electrode 115, in the vicinity of a region where the distance is largest among the distances between the convex side of the warpage of the semiconductor laser element 50 and the base 70. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor laser device, and more particularly to a semiconductor laser device including a semiconductor laser element fixed to a base.

  In recent years, low-power lasers for reproduction have been put into practical use as nitride-based semiconductor lasers as light sources for next-generation optical disks, and high-power lasers for high-speed recording are also being put into practical use. In addition, in the nitride semiconductor laser assembly process, a nitride semiconductor laser element is die-bonded to a pedestal of a metal stem using a conductive adhesive layer such as gold (Au) or tin (Sn) via a submount. Followed by gold wire bonding. Thereafter, sealing is performed with a cap through which laser light passes. In many cases, the die bond surface is on the gallium nitride substrate side of the nitride semiconductor laser element.

  In addition, in a conventional nitride semiconductor laser, a nitride semiconductor layer is formed by epitaxial growth of a nitride semiconductor layer on a substrate such as sapphire, silicon, and silicon carbide. The semiconductor laser element is warped due to a difference in thermal expansion coefficient and a lattice constant difference from the layer.

  Therefore, conventionally, a method for manufacturing a semiconductor laser device in consideration of warpage of the semiconductor laser element is known (see, for example, Patent Document 1). In Patent Document 1, a mounting surface of a mounting member to which a semiconductor light emitting element chip is die-bonded and a pressing surface of a collet that presses the semiconductor light emitting element chip from above at the time of die bonding are formed by a curved surface having a predetermined curvature in advance. A manufacturing method has been proposed in which a semiconductor light-emitting element chip is die-bonded using a die. Thereby, the semiconductor light emitting element chip is fixed to the mount member in a state where the warp corrected in a predetermined direction has occurred.

JP 2003-31895 A

  However, in the semiconductor laser device disclosed in Patent Document 1 and the manufacturing method thereof, the semiconductor light emitting element chip (semiconductor laser element) is placed in a predetermined direction by a mount member and a collet processed into a curved surface shape having a predetermined curvature. Since it is die-bonded to the mount member (base) in a warped state, it is difficult to cope with the warp variation of individual semiconductor light emitting element chips. That is, due to the variation in warpage of the semiconductor light emitting element chip, when the semiconductor light emitting element chip is formed with a warp different from the curved shape on the mount member side, when mounting the semiconductor light emitting element chip to the mount member, If the warpage of the semiconductor light emitting element chip is corrected to match the curved shape of the mount member, there is a disadvantage that stress is generated in the semiconductor light emitting element chip. As a result, there are problems that the laser characteristics are deteriorated and the semiconductor light emitting element chip is damaged. In particular, in increasing the output power of a nitride semiconductor laser, since the resonator length (element chip length) is formed longer, the amount of warpage and the variation in the amount of warpage become larger. Cheap.

  Further, in the method of manufacturing a semiconductor laser device disclosed in Patent Document 1, a semiconductor light emitting device chip (semiconductor laser) has to be formed because the resonator length needs to be increased with the increase in output of the nitride semiconductor laser. Since the amount of warping and the amount of warping of the element are larger, the distance between the semiconductor light emitting element chip and the mount member (base) becomes more noticeable. Therefore, in the region where the distance between the semiconductor light emitting element chip and the mount member is small during laser light oscillation, the heat radiation performance from the semiconductor light emitting element chip to the mount member is good, while the semiconductor light emitting element chip and the mount member Since the heat dissipation performance decreases in a region where the distance between the two is large, there is a problem that a heat generation temperature distribution is generated in the semiconductor light emitting device chip. In particular, when an exothermic temperature distribution occurs in a semiconductor light emitting device chip, a distribution occurs in the refractive index of the semiconductor layer in the vicinity of the waveguide. There is a linear relationship between the current applied to the laser and the optical output, but the relationship becomes unstable.

  The present invention has been made to solve the above-described problems, and one object of the present invention is to suppress the deterioration of the laser characteristics and the damage of the semiconductor laser element due to the correction of the warp. Another object of the present invention is to provide a semiconductor laser device that can be made uniform and that can generate a uniform heat generation temperature distribution in the semiconductor laser element.

Means for Solving the Problems and Effects of the Invention

  In order to achieve the above object, a semiconductor laser device according to an aspect of the present invention includes a semiconductor laser element having a warp along a first direction in which the resonator extends, and a surface on the concave side of the warp of the semiconductor laser element. And an electrode layer provided with a wire bond portion and a base on which a convex side of the warp of the semiconductor laser element is fixed. The semiconductor laser element includes a convex side of the warp of the semiconductor laser element and a base Is fixed to the base so as to change according to the warp of the semiconductor laser element along the first direction, and the distance between the convex side of the warp of the semiconductor laser element and the base Of these, the wire bond portion is provided in the vicinity of the portion of the electrode layer corresponding to the vicinity of the region having the largest distance. In the above aspect, the “maximum distance” means not only the distance between the convex side of the warp of the semiconductor laser element and the base is completely the largest, but also the distance is substantially the largest. It only needs to be a large distance.

  In the semiconductor laser device according to one aspect of the present invention, as described above, the distance between the convex side of the warp of the semiconductor laser element and the base is set along the first direction. Even if there is a variation in the warp of the semiconductor laser element, the semiconductor laser element can be mounted on the base without correcting the warp of the semiconductor laser element itself by being configured to be fixed to the base so as to change according to the warp. Can be fixed to the base. Thereby, it is possible to suppress the generation of excessive stress due to the correction of the warp in the semiconductor laser element. As a result, it is possible to suppress the deterioration of the laser characteristics and the damage of the semiconductor laser element. Further, the semiconductor laser element may be provided with a wire bond portion in the vicinity of the portion of the electrode layer corresponding to the vicinity of the region having the largest distance among the distance between the convex side of the warp of the semiconductor laser element and the base. By configuring, when the laser beam oscillates, heat generated by the laser beam emission is radiated into the air through the wire bond part on the electrode layer side in a region where the distance between the semiconductor laser element and the base is large. Therefore, a heat dissipation performance equivalent to the heat dissipation performance from the semiconductor laser element to the base in a region where the distance between the semiconductor laser element and the base is small can be obtained. As a result, the heat generation temperature distribution in the semiconductor laser element can be made uniform.

  In the semiconductor laser device according to the above aspect, the semiconductor laser element preferably includes a substrate and a semiconductor laser element portion formed on the surface of the substrate, and the semiconductor laser element is arranged such that the substrate side faces the base. The fixing layer is fixed to the base via the fusion layer, and the thickness of the fusion layer is changed in accordance with the warp of the semiconductor laser element along the first direction in the region sandwiched between the substrate and the base. Is formed. According to this configuration, the gap formed between the substrate of the semiconductor laser element and the base for fixing the substrate is efficiently filled according to the warp of the semiconductor laser element by the fusion layer having a changed thickness. Therefore, the semiconductor laser element can be easily fixed to the base without correcting the warp.

  In this case, the fusion layer is preferably a conductive adhesive layer made of solder. If comprised in this way, the fusion | melting layer from which thickness was changed can be easily formed with the characteristic at the time of solder melting.

  In the semiconductor laser device according to the aforementioned aspect, the semiconductor laser element preferably includes a semiconductor laser element portion having a nitride-based semiconductor layer. As described above, even when the semiconductor laser element portion having the nitride-based semiconductor layer that is likely to be warped during epitaxial growth is fixed to the base, if the configuration according to the above aspect is used, it is easily caused by the correction of the warp. The deterioration of the laser characteristics and the damage of the semiconductor laser element portion can be suppressed, and the heat generation temperature distribution in the semiconductor laser element can be made uniform.

  In the semiconductor laser device according to the above aspect, the wire bond portion is preferably provided in the vicinity of one end of the resonator in the vicinity of the light emitting end or in the vicinity of the light reflecting end. With this configuration, when the wire bond portion is provided in the vicinity of the light emitting end, when the laser light in the resonator is emitted from the light emitting end surface, a part of the laser light is on the light emitting end surface. Heat generated due to scattering by the surface shape (uneven shape) is efficiently aired through the wire bond portion provided in the region (wire bond region) where the distance between the semiconductor laser element and the base is substantially the largest. Can diffuse (heat dissipation) inside. In addition, when the wire bond portion is provided in the vicinity of the light reflection end, when the laser light in the resonator is reflected by the light reflection end surface, a part of the laser light is absorbed by the light reflection end surface. The resulting heat generation can be efficiently diffused (radiated) into the air via a wire bond portion provided in a region (wire bond region) where the distance between the semiconductor laser element and the base is substantially the largest.

  In the present invention, the light emitting end and the light reflecting end of the resonator are distinguished from each other by the magnitude relationship of the intensity of the laser light emitted from each resonator end face. That is, the side where the laser beam emission intensity is relatively high is the light emission end, and the side where the laser beam emission intensity is relatively low is the light reflection end.

  In the semiconductor laser device according to the above aspect, the semiconductor laser element preferably has a warp along a second direction intersecting the first direction, and the semiconductor laser element has a base and a convex side of the warp of the semiconductor laser element. The distance between the base and the base is fixed to the base so as to change according to the warp of the semiconductor laser element along the second direction. If comprised in this way, even if the curvature of the semiconductor laser element in a 2nd direction has dispersion | variation, a semiconductor laser element can be fixed with respect to a base, without correcting the curvature of semiconductor laser element itself. Therefore, it is possible to suppress an excessive stress from being generated in the second direction of the semiconductor laser element. As a result, it is possible to prevent the laser characteristics from being deteriorated or the semiconductor laser element from being damaged.

  In the configuration in which the semiconductor laser element has a warp along the second direction, the wire bond portion is preferably provided in the vicinity of the portion of the electrode layer corresponding to the vicinity of the center portion in the second direction. With this configuration, the wire bonding portion (such as Au wire) is wire-bonded as compared with the case where the wire bond portion is provided in the electrode layer portion corresponding to the vicinity of the end portion in the second direction of the semiconductor laser element. A larger mounting dimension error in the second direction can be allowed. Thereby, the assembly yield of the semiconductor laser device can be improved. In the above configuration, the “near the central part in the second direction” is not limited to the perfect central part in the second direction, but may be substantially near the central part in the second direction.

  In the semiconductor laser device according to the above aspect, the electrode layer is preferably provided along the first direction, and the wire bond portion is provided so as to extend along the direction in which the electrode layer extends. If comprised in this way, since the surface area of the electrode layer containing a wire bond part can be increased along a 1st direction, the thermal radiation performance of a semiconductor laser element can be improved further using an electrode layer. .

  In the semiconductor laser device according to the above aspect, the ridge portion connected to the electrode layer is preferably formed on the upper surface of the semiconductor laser element, and the wire bond portion is formed in a region other than the region where the ridge portion is formed. Is provided. With this configuration, since the ridge portion is not disposed immediately below the wire bond portion, an impact load applied to the wire bond portion from above is applied to the ridge portion when wire bonding is performed on a wiring member (such as an Au wire). Does not participate directly. Thereby, a ridge part can be protected from the impact load at the time of wire bonding.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view for explaining a schematic structure of a semiconductor laser device of the present invention. Before describing a specific embodiment of the present invention with reference to FIG. 1, a schematic structure of a semiconductor laser device 1 of the present invention will be described.

  In the semiconductor laser device 1 of the present invention, as shown in FIG. 1, the semiconductor laser element 10 is fixed to a base 30 via a conductive adhesive layer 20 made of a metal layer or the like. The conductive adhesive layer 20 is an example of the “fusion layer” in the present invention.

  The semiconductor laser element 10 has a warp along the direction in which the resonator extends (direction A). The semiconductor laser element 10 has a light emitting surface 10a and a light reflecting surface 10b at both ends in the direction in which the resonator extends (direction A). The light emitting surface 10a is an example of the “light emitting end” in the present invention, and the light reflecting surface 10b is an example of the “light reflecting end” in the present invention.

  Here, in the semiconductor laser device 1 according to the present invention, the convex side of the warp of the semiconductor laser element 10 is fixed to the upper surface 30 a of the base 30. In the semiconductor laser device 1, the distance (thickness of the conductive adhesive layer 20) H <b> 1 between the semiconductor laser element 10 and the base 30 in the vicinity of the light emitting surface 10 a of the semiconductor laser element 10 is the light of the semiconductor laser element 10. The distance between the semiconductor laser element 10 and the base 30 in the vicinity of the reflecting surface 10b (the thickness of the conductive adhesive layer 20) H2 is greater.

  The semiconductor laser element 10 can be configured by forming a semiconductor layer (semiconductor laser element portion) on a substrate such as a gallium nitride substrate, a sapphire substrate, a silicon substrate, or a silicon carbide substrate.

  A dielectric multilayer film may be formed on the light emitting surface 10a and the light reflecting surface 10b of the semiconductor laser element 10.

(First embodiment)
FIG. 2 is a perspective view showing the structure of the semiconductor laser including the semiconductor laser device according to the first embodiment of the present invention. FIG. 3 is a sectional view showing the structure of the semiconductor laser device according to the first embodiment shown in FIG. FIG. 4 is a plan view showing the structure of the semiconductor laser device according to the first embodiment shown in FIG. 5 to 7 are a perspective view and a sectional view for explaining the structure of the semiconductor laser element of the semiconductor laser device according to the first embodiment shown in FIG. First, the structure of the semiconductor laser device 40 according to the first embodiment and the semiconductor laser including the same will be described with reference to FIGS.

  In the semiconductor laser including the semiconductor laser device 40 according to the first embodiment, the semiconductor laser element 50 is fixed to the base 70 via the conductive adhesive layer 60 such as AuSn, as shown in FIGS. ing. The conductive adhesive layer 60 is an example of the “fusion layer” in the present invention. Further, as shown in FIG. 2, the base 70 is fixed to a pedestal portion 82 provided on a main body portion 81 of a metal stem 80 via a conductive adhesive layer 61 such as AuSn. The stem 80 is provided with two lead terminals 83 and 84.

  Further, the upper surface of the semiconductor laser element 50 is wire-bonded to the lead terminal 83 of the stem 80 using an Au wire 90 as shown in FIG. Further, the upper surface 70 a of the base 70 is wire-bonded to the pedestal portion 82 of the stem 80 using an Au wire 91. Further, a cap (not shown) with a window through which the laser beam is transmitted is attached to the main body portion 81 of the stem 80.

  4 and 5, the semiconductor laser element 50 has a width (W1) of about 200 μm, a length (L1) of about 1000 μm in the direction in which the resonator extends (B direction), and a length of about 100 μm. Thickness (t1) (see FIG. 5). The direction B is an example of the “first direction” in the present invention.

  Here, in the first embodiment, as shown in FIG. 3, the semiconductor laser element 50 includes a substrate 100 disposed on the base 70 side and a semiconductor laser element portion 110 disposed on the opposite side of the base 70. It consists of and. The substrate 100 is an example of the “substrate” in the present invention.

Specifically, as shown in FIGS. 5 and 6, an n-type AlGaN cladding layer 111, an active layer 112 made of GaInN, and p-type AlGaN are formed on the upper surface of a substrate 100 made of gallium nitride, silicon, silicon carbide, or the like. The clad layer 113 is formed by epitaxial growth. The semiconductor laser element portion 110 is formed by the nitride semiconductor layers such as the n-type AlGaN cladding layer 111, the active layer 112, and the p-type AlGaN cladding layer 113. The n-type AlGaN cladding layer 111, the active layer 112, and the p-type AlGaN cladding layer 113 are examples of the “nitride-based semiconductor layer” in the present invention. The p-type AlGaN cladding layer 113 is formed with a waveguide structure by forming a ridge 113a extending in the B direction (see FIG. 5). The ridge portion 113a is formed to have a width of about 2 μm. Further, as shown in FIG. 3, a light emitting surface (resonator surface) 110a and a light reflecting surface (resonator surface) 110b are formed at the end of the semiconductor laser element portion 110 in the B direction. The light emitting surface 110a is an example of the “light emitting end” in the present invention, and the light reflecting surface 110b is an example of the “light reflecting end” in the present invention. Further, the light emitting surface 110a, the light reflecting surface 110b, and the waveguide structure constitute a resonator extending in the B direction. A dielectric multilayer film (not shown) is formed on the light emitting surface 110a and the light reflecting surface 110b. As shown in FIGS. 5 and 6, an insulating film 114 made of SiO ₂ is formed on the upper surface of the p-type AlGaN cladding layer 113 other than the ridge 113a.

  As shown in FIGS. 5 and 6, an n-side electrode 101 made of an Au film is formed on the lower surface of the substrate 100. In the first embodiment, the lower surface side of the n-side electrode 101 is a die bond surface. A p-side electrode 115 made of an Au film is formed on the top surface of the ridge portion 113a and the insulating film 114 of the p-type AlGaN cladding layer 113 along the direction (B direction) in which the ridge portion 113a extends (see FIG. 5). Has been. Further, as shown in FIGS. 5 and 6, the upper portion of the ridge portion 113a has a thickness of about 1 nm in order to ensure electrical contact between the ridge portion 113a (cladding layer) and the p-side electrode 115. An ohmic layer 116 made of a Pt layer, a Pd layer having a thickness of about 30 nm, and a Ti layer having a thickness of about 1 nm is formed. The p-side electrode 115 is formed by laminating a Pt layer having a thickness of about 9 nm and a Pd layer having a thickness of about 150 nm, and the outermost surface is covered with an Au film having a thickness of about 5 μm.

  As shown in FIG. 4, the p-side electrode 115 has a width (W2) of about 20 μm and a thickness (t2) of about 5.2 μm (see FIG. 6). The length of the p-side electrode 115 is configured to be slightly shorter than the length L1 of the resonator (semiconductor laser element 50).

  In the first embodiment, as shown in FIGS. 3 and 5, the semiconductor laser element 50 differs depending on the type and amount of the additive element of the heterojunction, but it is approximately along the direction in which the resonator extends (direction B). It has a warp of 0.5 μm to about 3 μm. That is, the semiconductor laser element 50 has a warp such that the upper surface (first main surface) side is concave and the lower surface (second main surface) side is convex. The semiconductor laser element portion 110 has a concave surface on the side opposite to the substrate 100, and the semiconductor laser element 50 has a warped convex side (substrate 100 side) on the base 70 (see FIG. 3). It is fixed. The warpage of the semiconductor laser element 50 occurs due to a difference in thermal expansion coefficient and a lattice constant between the substrate 100 and the semiconductor laser element unit 110.

Specifically, as shown in Table 1 below, gallium nitride has a coefficient of thermal expansion in the a-axis direction of about 5.59 × 10 ⁻⁶ / K and a lattice in the a-axis direction of about 0.3189 nm. Have a constant. Silicon has a coefficient of thermal expansion in the a-axis direction of about 2.6 × 10 ⁻⁶ / K and a lattice constant in the a-axis direction of about 0.543 nm. Silicon carbide has a coefficient of thermal expansion in the a-axis direction of about 4.2 × 10 ⁻⁶ / K and a lattice constant in the a-axis direction of about 0.3081 nm. In addition, AlGaN, which is the main material of the semiconductor laser device portion 110 of the present proposal, has a coefficient of thermal expansion in the a-axis direction of about 4.15 × 10 ⁻⁶ / K to about 5.59 × 10 ⁻⁶ / K, It has a lattice constant in the a-axis direction of about 0.3112 nm to about 0.3189 nm. In addition, GaInN, which is an active layer of the semiconductor laser device unit 110 of the present proposal, has a thermal expansion coefficient in the a-axis direction of about 3.8 × 10 ⁻⁶ / K to about 5.59 × 10 ⁻⁶ / K, It has a lattice constant in the a-axis direction of about 0.3189 nm to about 0.3533 nm.

そして、基板１００が窒化ガリウムからなる場合、半導体レーザ素子部１１０を構成するｎ型ＡｌＧａＮクラッド層１１１およびｐ型ＡｌＧａＮクラッド層１１３の格子定数が基板１００の格子定数よりも小さいことに起因して、半導体レーザ素子５０の基板１００側が凸状になる（半導体レーザ素子部１１０側が凹状になる）ように反りが発生する。なお、活性層１１２は、基板１００よりも大きい格子定数を有しているが、活性層１１２の厚みは、ｎ型ＡｌＧａＮクラッド層１１１およびｐ型ＡｌＧａＮクラッド層１１３の厚みよりも小さいので、半導体レーザ素子５０の基板１００側が凸状になるような向きに反りが発生すると考えられている。その一方、基板１００がシリコンまたはシリコンカーバイトからなる場合、半導体レーザ素子部１１０を構成するｎ型ＡｌＧａＮクラッド層１１１、活性層１１２およびｐ型ＡｌＧａＮクラッド層１１３の熱膨張係数が基板１００の熱膨張係数よりも大きいことに起因して、半導体レーザ素子５０の基板１００側が凸状になる（半導体レーザ素子部１１０側が凹状になる）ような向きに反りが発生すると考えられている。

When the substrate 100 is made of gallium nitride, the lattice constants of the n-type AlGaN cladding layer 111 and the p-type AlGaN cladding layer 113 constituting the semiconductor laser element unit 110 are smaller than the lattice constant of the substrate 100, Warpage occurs so that the substrate 100 side of the semiconductor laser element 50 becomes convex (the semiconductor laser element 110 side becomes concave). Although the active layer 112 has a larger lattice constant than the substrate 100, the thickness of the active layer 112 is smaller than the thickness of the n-type AlGaN cladding layer 111 and the p-type AlGaN cladding layer 113, so that the semiconductor laser It is considered that warpage occurs in the direction in which the substrate 50 side of the element 50 becomes convex. On the other hand, when the substrate 100 is made of silicon or silicon carbide, the thermal expansion coefficients of the n-type AlGaN cladding layer 111, the active layer 112, and the p-type AlGaN cladding layer 113 constituting the semiconductor laser element portion 110 are the thermal expansion of the substrate 100. Due to the fact that the coefficient is larger than the coefficient, it is considered that warpage occurs in a direction in which the substrate 100 side of the semiconductor laser element 50 becomes convex (the semiconductor laser element portion 110 side becomes concave).

  Here, in the first embodiment, as shown in FIG. 3, the semiconductor laser element 50 is configured such that the distance between the warped convex side (substrate 100 side) of the semiconductor laser element 50 and the base 70 is a resonator. Is fixed to the base 70 via the conductive adhesive layer 60 so as to change according to the warp of the semiconductor laser element 50 along the extending direction (B direction).

  Specifically, as shown in FIG. 3, the semiconductor laser element 50 includes a distance H3 (conductive adhesion) between the semiconductor laser element 50 and the base 70 in the vicinity of the light emitting surface 110a of the resonator of the semiconductor laser element 50. The thickness 60 of the layer 60: about 3 μm) is a distance H4 between the semiconductor laser device 50 and the base 70 in the vicinity of the light reflecting surface 110b of the resonator of the semiconductor laser device 50 (thickness of the conductive adhesive layer 60: about 1 μm). By forming the conductive adhesive layer 60 such as AuSn so as to be larger than that, the substrate 100 side is fixed to the base 70 via the conductive adhesive layer 60. In the first embodiment, solder is used as the material of the conductive adhesive layer 60.

  As shown in FIG. 6, the conductive adhesive layer 60 has the same width (W1 = about 200 μm) and length (L1 = about 1000 μm) (see FIG. 5) as the semiconductor laser element 50, as described above. And a thickness of about 1 μm to about 5 μm (maximum value).

  As shown in FIG. 3, the light reflection surface 110 b side of the semiconductor laser element 50 is disposed substantially parallel to the upper surface 70 a of the base 70. That is, the semiconductor laser element 50 is arranged so that the transmission direction of the laser light reflected toward the inside of the resonator on the light reflecting surface 110b is substantially parallel to the direction in which the upper surface 70a of the base 70 extends.

  In the first embodiment, as shown in FIGS. 4 and 5, the wire bond portion 115a provided on the p-side electrode 115 of the semiconductor laser element 50 is formed on the upper surface of the insulating film 114 in the vicinity of the light emitting surface 110a. Is provided. That is, the wire bond portion 115a is in the vicinity of the region having the largest distance among the distances between the semiconductor laser element 50 and the base 70 (the thickness of the conductive adhesive layer 60 is substantially H3 (FIG. 3 (Refer to the region), the p-side electrode 115 corresponding to the region). As shown in FIG. 4, the wire bond portion 115 a has a width (W3) of about 80 μm to about 90 μm, a length (L2) of about 50 μm to about 60 μm in the B direction, and the same thickness as the p-side electrode 115. And a thickness (t2) (see FIG. 7) of about 5.2 μm.

  In the first embodiment, as shown in FIGS. 4, 5, and 7, the ridge portion 113 a and the p-side electrode 115 of the semiconductor laser device 50 are arranged in the width direction (C direction) of the resonator of the semiconductor laser device 50. Is formed so as to extend substantially in parallel with the center line 500 at a predetermined distance (about 20 μm) from the center line 500 (one-dot chain line) (see FIG. 4). The wire bond portion 115a protrudes from the p-side electrode 115 formed directly above the ridge portion 113a via the ohmic layer 116 in the width direction (C direction) of the semiconductor laser element 50, and the center line 500 (FIG. 4). The insulating film 114 is provided on the upper surface of the region where the ridge portion 113b is not formed.

  Further, as shown in FIG. 4, the base 70 has a width (W4) of about 900 μm, a length (L3) of about 1200 μm, and a thickness (t3) of about 250 μm (see FIG. 3). Yes.

  The base 70 includes a substrate 70b made of SiC or AlN, as shown in FIGS. A base metal layer 70c made of a Ti layer having a thickness of about 100 nm, a Pt layer having a thickness of about 20 nm, and an Au layer having a thickness of about 30 nm is formed on the entire upper surface and lower surface of the substrate 70b. Has been. The base metal layer 70 c is provided for bonding the conductive adhesive layer 60 to the base 70.

  FIG. 8 is a diagram for explaining a manufacturing process of the semiconductor laser including the semiconductor laser device according to the first embodiment of the invention. Next, with reference to FIG. 2, FIG. 3, FIG. 5 and FIG. 8, a manufacturing process of the semiconductor laser including the semiconductor laser device 40 according to the first embodiment will be described.

First, as shown in FIG. 5, an n-type AlGaN cladding layer 111, an active layer 112 made of GaInN, and a p-type AlGaN cladding layer 113 are epitaxially grown on the upper surface of the substrate 100, thereby forming the semiconductor laser element portion 110. . Then, after forming a ridge portion 113 a extending in the B direction on the p-type AlGaN cladding layer 113, an insulating film 114 made of SiO ₂ is formed on the upper surface of the p-type AlGaN cladding layer 113 other than the ridge portion 113 a. Thereafter, an n-side electrode 101 made of an Au film is formed on the lower surface of the substrate 100, and an ohmic layer 116 made of a Pt layer, a Pd layer, and a Ti layer is formed on the upper surface of the ridge portion 113a of the p-type AlGaN cladding layer 113. Form. Then, the p-side electrode 115 whose outermost surface is an Au film is formed on the upper surfaces of the ohmic layer 116 and the insulating film 114. Then, the semiconductor laser element 50 is formed by forming a dielectric multilayer film (not shown) on the light emitting surface 110 a and the light reflecting surface 110 b of the resonator of the semiconductor laser element unit 110. At this time, in the first embodiment, as shown in FIG. 5, the substrate 100 side has a convex shape due to the difference in thermal expansion coefficient and the lattice constant difference between the substrate 100 and the semiconductor laser element portion 110 (semiconductor laser element). Warpage occurs in the semiconductor laser device 50 so that the portion 110 side becomes concave.

  Next, in the first embodiment, as shown in FIG. 3, a distance H <b> 3 (conductive adhesive layer 60) between the semiconductor laser element 50 and the base 70 in the vicinity of the light emitting surface 110 a of the resonator of the semiconductor laser element 50. Is approximately 3 μm) than the distance H4 between the semiconductor laser element 50 and the base 70 in the vicinity of the light reflection surface 110b of the resonator of the semiconductor laser element 50 (thickness of the conductive adhesive layer 60: approximately 1 μm). The warped convex side (substrate 100 side) of the semiconductor laser element 50 is die-bonded to the base 70 so as to increase. At the same time, the base 70 is fixed to the pedestal portion 82 (see FIG. 2) of the stem 80.

  Specifically, as shown in FIG. 8, in a nitrogen atmosphere, a conductive adhesive layer 61 (see FIG. 2) and a pedestal 82 (see FIG. 2) of a metal stem 80 (see FIG. 2) The base 70 on which the conductive adhesive layer 60 is disposed in a predetermined region and the semiconductor laser element 50 are sequentially disposed.

  Here, in the first embodiment, as shown in FIG. 8, the thickness of the conductive adhesive layer 60 is changed in three ways (three steps) in the length direction (B direction) of the resonator. 70 is disposed on the upper surface 70a. That is, the thickness of the conductive adhesive layer 60 made of solder is gradually increased from the vicinity of the light reflecting surface 110b (thickness: about 1 μm) toward the light emitting surface 110a (the thickness is about 3 μm near the light emitting surface 110a). And disposed on the upper surface 70 a of the base 70.

  In the first embodiment, as shown in FIG. 8, the temperature of the stem 80 (see FIG. 2) is raised, and the vicinity of the light reflecting surface 110 b of the semiconductor laser element 50 is made of a conductive adhesive layer by a ceramic collet 120. The pressure is pressed in the P direction against the base 70 through 60. At this time, when the vicinity of the light reflecting surface 110b of the semiconductor laser element 50 is pressed by the collet 120, the conductive adhesive layer 60 in the region pressed by the collet 120 (on the light reflecting surface 110b side of the semiconductor laser element 50) is melted. While moving to a region not pressed by the collet 120 (on the light emitting surface 110a side of the semiconductor laser element 50), the conductive adhesive layer 60 between the semiconductor laser element 50 on the light emitting surface 110a side and the base 70 is moved. Also melts by heat conduction. As a result, as shown in FIG. 3, the conductive adhesive layer 60 changes the thickness from H4 to H3 corresponding to the warped shape of the semiconductor laser element 50. That is, in the first embodiment, the thickness of the conductive adhesive layer 60 changes according to the warp of the semiconductor laser element 50 without correcting the warp of the semiconductor laser element 50. The collet 120 is provided with a hole 120a, and the semiconductor laser element 50 can be adsorbed by evacuating the inside of the hole 120a.

  In addition, the conductive adhesive layer 61 (see FIG. 2) sandwiched between the pedestal 82 (see FIG. 2) and the base 70 (see FIG. 2), which are heated together with the stem 80 (see FIG. 2), also conducts heat. To melt.

  Thereafter, as shown in FIG. 2, the stem 80 is cooled to solidify the conductive adhesive layers 60 and 61, whereby the semiconductor laser element 50 is fixed to the base 70 via the conductive adhesive layer 60. The base 70 is fixed to the pedestal portion 82 of the stem 80 via the conductive adhesive layer 61.

  The wire bonding portion 115a of the semiconductor laser element 50 and the lead terminal 83 of the stem 80 are connected by wire bonding using the Au wire 90, and the upper surface 70a of the base 70 and the pedestal portion 82 of the stem 80 are connected to each other. Are connected by wire bonding using an Au wire 91. Finally, a cap (not shown) with a window through which laser light is transmitted is attached to the main body portion 81 of the stem 80.

  In this manner, a semiconductor laser including the semiconductor laser device 40 according to the first embodiment is manufactured.

  In the first embodiment, as described above, the semiconductor laser element 50 is a semiconductor whose distance between the warped convex side of the semiconductor laser element 50 and the base 70 extends along the direction (B direction) in which the resonator extends. By being configured to be fixed to the base 70 so as to change according to the warp of the laser element 50, even if the warp of the semiconductor laser element 50 varies, the semiconductor laser element 50 is replaced with the semiconductor laser element 50 itself. It is possible to fix to the base 70 without correcting the warpage. Thereby, it is possible to suppress the generation of excessive stress due to the correction of the warp in the semiconductor laser element 50. As a result, it is possible to suppress degradation of the laser characteristics and damage of the semiconductor laser element 50 (semiconductor laser element unit 110).

  In the first embodiment, the semiconductor laser element 50 is a region (the conductive adhesive layer 60) that has the largest distance among the distances between the warped convex side of the semiconductor laser element 50 and the base 70. The wire bonding portion 115a is provided in the portion of the p-side electrode 115 corresponding to the vicinity of the region where the thickness of the semiconductor laser device 50 is substantially H3 (see FIG. 3). In the region where the distance between the base 70 and the base 70 is large (near the light emitting surface 110a), the heat generated in the ridge 113a due to laser light emission is dissipated into the air via the wire bonding portion 115a on the p-side electrode 115 side. Therefore, the semiconductor laser in the region where the distance between the semiconductor laser element 50 and the base 70 is small (the region where the thickness of the conductive adhesive layer 60 is substantially H4 (see FIG. 3)). Radiation performance equivalent to the heat dissipation performance from the laser device 110 to the base 70 can be obtained. As a result, the heat generation temperature distribution in the semiconductor laser element 50 can be made uniform.

  In the first embodiment, the semiconductor laser element 50 is fixed to the base 70 via the conductive adhesive layer 60 so that the substrate 100 side faces the base 70, and the thickness of the conductive adhesive layer 60 is In a region sandwiched between the substrate 100 and the base 70, H4 (about 1 μm) to H3 (about 3 μm) according to the warp of the semiconductor laser element 50 along the direction in which the resonator extends (direction B) (see FIG. 3). ), The gap formed between the substrate 100 of the semiconductor laser element 50 and the base 70 that fixes the substrate 100 is formed by the conductive adhesive layer 60 whose thickness is changed. Since the semiconductor element 50 can be filled efficiently according to the warp of the laser element 50, the semiconductor laser element 50 can be easily fixed to the base 70 without correcting the warp.

  In the first embodiment, the conductive adhesive layer 60 when the semiconductor laser element 50 is fixed to the base 70 is composed of a fusion layer made of solder, so that the characteristics at the time of solder melting can be easily achieved. It is possible to form a fusion layer having a changed thickness.

  In the first embodiment, the semiconductor laser element 50 includes a semiconductor laser element unit 110 having an n-type AlGaN cladding layer 111, an active layer 112 made of GaInN, and a nitride-based semiconductor layer such as a p-type AlGaN cladding layer 113. . Thus, even when the semiconductor laser element portion 110 having the nitride-based semiconductor layer that is likely to be warped during epitaxial growth is fixed to the base 70, the warp can be easily corrected by using the configuration according to the first embodiment. It is possible to suppress the deterioration of the laser characteristics and the damage to the semiconductor laser element portion 110 due to the above, and to make the heat generation temperature distribution inside the semiconductor laser element portion 110 uniform.

  In the first embodiment, the wire bond portion 115a is provided in the vicinity of the light emitting surface 110a of the resonator of the semiconductor laser element 50, so that the laser light in the resonator is emitted from the light emitting surface 110a. In this case, heat generated due to part of the laser light being scattered by the surface shape (uneven shape) of the light emitting surface 110a is a region where the distance between the semiconductor laser element 50 and the base 70 is substantially the largest. (A region where the thickness of the conductive adhesive layer 60 is substantially H3 (see FIG. 3)) can be efficiently diffused (heat dissipated) into the air via the wire bond portion 115a provided in the vicinity.

  In the first embodiment, the semiconductor laser element 50 is arranged such that the lower surface side (n-side electrode 101 side) of the light reflecting surface 110b of the resonator is substantially parallel to the upper surface 70a of the base 70. By measuring the thickness of the conductive adhesive layer 60 after bonding 50 to the base 70, the laser beam emission direction (position of the light emission surface 110a) of the semiconductor laser element 50 can be easily identified.

  In the first embodiment, the wire bond portion 115a is provided so as to protrude from the p-side electrode 115 in the width direction (C direction) of the resonator when seen in a plan view, so that the ridge portion 113a and The ohmic layer 116 can be protected from an impact load during wire bonding.

  In the first embodiment, the center line 500 (one point in FIG. 4) in the width direction of the resonator (the direction of arrow C in FIG. 4) along the direction in which the resonator extends (direction B) is formed on the upper surface of the semiconductor laser element 50. A ridge portion 113a that extends substantially parallel to the center line 500 with a predetermined distance (about 20 μm) from the chain line) and is connected to the p-side electrode 115 via the ohmic layer 116, and a wire bond portion 115a is provided on the upper surface of the insulating film 114 (see FIG. 5) in a region where the ridge portion 113a is not formed, so that the ridge portion 113a and the ohmic layer 116 are disposed immediately below the wire bond portion 115a. Therefore, when the Au wire 90 is wire bonded, an impact load applied to the wire bond portion 115a from above is applied to the ridge portion 113a and the ohmic layer 1. Not applied directly to the 6. Thereby, the ridge portion 113a and the ohmic layer 116 can be protected from an impact load during wire bonding.

  Further, in the first embodiment, the ridge portion 113a and the wire bond portion 115a are sandwiched between the substantially central portion (region near the center line 500) of the semiconductor laser element 50 in the resonator width direction (direction C in FIG. 4). Thus, the wire bond portion 115a can be disposed closer to the center line 500 by the amount the ridge portion 113a is shifted from the center line 500 to one side in the C direction. As a result, it is possible to suppress the impact load applied from above to the wire bond portion 115a from being applied to the wire bond portion 115a in the width direction of the resonator of the semiconductor laser device 50 (direction C in FIG. 4) during wire bonding.

  FIG. 9 is a diagram showing the position of the wire bond portion on the semiconductor laser device in the simulation for confirming the effect of the first embodiment shown in FIG. FIG. 10 is a diagram showing the result of a simulation performed to confirm the effect of the first embodiment shown in FIG. Next, a simulation performed to confirm the effect of the first embodiment will be described with reference to FIGS. 3, 4, 9 and 10.

  In this simulation, first, as shown in FIG. 9, a heat dissipation model during laser operation of the semiconductor laser device 50 (see FIGS. 3 and 4) according to Example 1 corresponding to the first embodiment described above was created. Further, as Comparative Examples 1 to 3, a heat dissipation model at the time of laser operation of the semiconductor laser element 50 in which the wire bond portion 115a is provided at the position shown in FIG. 9 was created. Specifically, in Comparative Example 1, a heat dissipation model in which the wire bond portion 115a is provided substantially near the center in the direction in which the resonator extends is created. In Comparative Example 2, a heat dissipation model in which the wire bond portion 115a is provided near the position corresponding to the light exit surface 110a in the direction in which the resonator extends is created. In Comparative Example 3, a heat dissipation model was created in which the wire bond portion 115a was disposed on the entire surface along the direction in which the resonator extends. In this simulation, heat dissipation from the semiconductor laser element portion 110 (see FIG. 3) to the base 70 (see FIG. 3), and the p-side electrode 115 and the wire bonding portion from the semiconductor laser element portion 110 (see FIG. 3). The heat generation temperature distribution of the semiconductor laser element unit 110 was calculated using a heat dissipation model that takes heat dissipation into the air through 115a.

  The heat generation temperature distribution of the semiconductor element portion during the laser operation of the semiconductor laser elements 50 according to Example 1, Comparative Example 1, Comparative Example 2, and Comparative Example 3 was calculated. The simulation results are shown in FIG.

  As shown in FIG. 10, in Comparative Examples 1 and 2, the heat generation temperature distribution was generated in the semiconductor laser element portion 110 in the direction in which the resonator extends. This is because in the region where the thickness of the conductive adhesive layer 60 between the semiconductor laser element part 110 and the base 70 is large (in the vicinity of the light emitting surface 110a (see FIG. 3)), the region where the thickness of the conductive adhesive layer 60 is small. Since the heat radiation performance is relatively inferior to that in the vicinity of the light reflecting surface 110b (see FIG. 3), the heat generation temperature in this region is considered to be higher. Also, in Comparative Example 3, since the wire bond portion 115a is uniformly formed in the direction in which the resonator extends, the heat generation temperature distribution as in Comparative Examples 1 and 2 cannot be improved. An exothermic temperature distribution almost the same as in Comparative Examples 1 and 2 was obtained. On the other hand, in Example 1, the prediction result that the heat generation temperature distribution in the direction in which the resonator extends is substantially uniform was obtained. This is because the area where the p-side electrode 115 is in contact with air is provided in another region by providing the wire bond portion 115a in a region where the conductive adhesive layer 60 having relatively poor heat dissipation performance is thick (near the light emitting surface 110a). This is probably because the heat dissipation performance was improved because the thickness of the conductive adhesive layer 60 increased in comparison with the relatively small resonator center and the light reflecting surface 110b. From this result, it was confirmed in Example 1 that the heat generation temperature distribution in the semiconductor laser element 110 can be made uniform.

(Second Embodiment)
FIG. 11 is a sectional view showing the structure of a semiconductor laser device according to the second embodiment of the present invention. FIG. 12 is a plan view showing the structure of the semiconductor laser device according to the second embodiment shown in FIG. FIG. 13 is a perspective view showing the structure of the semiconductor laser device according to the second embodiment shown in FIG. 11 to 13, in the second embodiment, unlike the first embodiment, the distance between the semiconductor laser element 50 and the base 70 in the vicinity of the light reflecting surface 110b of the resonator is as follows. The case where it fixes to the base 70 so that it may become larger than the distance in the light emission surface 110a vicinity is demonstrated.

  In the semiconductor laser device 130 according to the second embodiment, as shown in FIGS. 11 and 13, the semiconductor laser element 50 is warped on the convex side (substrate 100 side) of the semiconductor laser element 50 as in the first embodiment. And the base 70 via the conductive adhesive layer 140 such as AuSn (refer to FIG. 11) so that the distance between the base 70 and the extending direction of the resonator (B direction) changes. It is fixed.

  In the second embodiment, as shown in FIG. 11, the semiconductor laser element 50 includes a distance H <b> 5 between the semiconductor laser element 50 and the base 70 in the vicinity of the light reflection surface 110 b of the resonator of the semiconductor laser element 50. The thickness of the conductive adhesive layer 140: about 3 μm) is a distance H6 between the semiconductor laser element 50 and the base 70 in the vicinity of the light emitting surface 110a of the resonator of the semiconductor laser element 50 (the thickness of the conductive adhesive layer 140: By forming the conductive adhesive layer 140 so as to be larger than about 1 μm), the substrate 100 side is fixed to the base 70 via the conductive adhesive layer 140.

  As shown in FIG. 11, the light emitting surface 110 a side of the semiconductor laser element 50 is disposed substantially parallel to the upper surface 70 a of the base 70. That is, the semiconductor laser element 50 is arranged so that the direction of the laser light emitted from the light emitting surface 110a is substantially parallel to the direction in which the upper surface 70a of the base 70 extends.

  In the second embodiment, as shown in FIGS. 12 and 13, the wire bond portion 115a provided in the p-side electrode 115 of the semiconductor laser element 50 is provided so as to correspond to the vicinity of the light reflecting surface 110b. Yes. That is, the wire bond portion 115a is in the vicinity of the region having the largest distance among the distances between the semiconductor laser element 50 and the base 70 (the thickness of the conductive adhesive layer 140 is substantially H5 (FIG. 11 (Refer to the region), the p-side electrode 115 corresponding to the region).

  In the second embodiment, as shown in FIGS. 12 and 13, the ridge portion 113 a and the p-side electrode 115 of the semiconductor laser element 50 are center lines in the width direction (C direction) of the resonator of the semiconductor laser element 50. It is formed on the upper surface side of the semiconductor laser element portion 110 so as to extend substantially parallel to the center line 500 at a predetermined distance (about 20 μm) from 500 (one-dot chain line) (see FIG. 12). The wire bond portion 115a protrudes from the p-side electrode 115 formed directly above the ridge portion 113a via the ohmic layer 116 in the direction of arrow C of the semiconductor laser element 50, and the center line 500 (see FIG. 12). It is provided on the upper surface of the insulating film 114 in a region where the ridge portion 113b is not formed.

  The remaining structure of the semiconductor laser device 130 according to the second embodiment is similar to that of the aforementioned first embodiment.

  FIG. 14 is a view for explaining the manufacturing process of the semiconductor laser provided with the semiconductor laser device according to the second embodiment of the present invention. A manufacturing process for the semiconductor laser device 130 according to the second embodiment is now described with reference to FIGS. 2 and 11 to 14.

  First, the semiconductor laser element 50 is formed by the same manufacturing process as in the first embodiment.

  Next, in the second embodiment, as shown in FIG. 11, a distance H5 between the semiconductor laser element 50 and the base 70 in the vicinity of the light reflection surface 110b of the resonator of the semiconductor laser element 50 (conductive adhesive layer 140). Is approximately 3 μm) than the distance H6 between the semiconductor laser element 50 and the base 70 in the vicinity of the light emitting surface 110a of the resonator of the semiconductor laser element 50 (thickness of the conductive adhesive layer 140: approximately 1 μm). The warped convex side (substrate 100 side) of the semiconductor laser element 50 is die-bonded to the base 70 so as to increase. At the same time, the base 70 is fixed to the pedestal portion 82 (see FIG. 2) of the stem 80.

  In the second embodiment, as shown in FIG. 14, the thickness of the conductive adhesive layer 140 is changed in three ways (three steps) in the length direction (B direction) of the resonator. Is disposed on the upper surface 70a. That is, the thickness of the conductive adhesive layer 140 made of solder is gradually increased from the vicinity of the light emitting surface 110a (thickness: about 1 μm) toward the light reflecting surface 110b (the thickness is about 3 μm near the light reflecting surface 110b). And disposed on the upper surface 70 a of the base 70.

  Then, as shown in FIG. 14, the warped convex side (substrate 100 side) of the semiconductor laser element 50 is die-bonded to the base 70 using the same process as in the first embodiment. At this time, when the vicinity of the light emitting surface 110a of the semiconductor laser element 50 is pressed in the P direction by the collet 120, the conductive adhesive layer 140 in the region pressed by the collet 120 (on the light emitting surface 110a side of the semiconductor laser element 50). Moves to a region that is not pressed by the collet 120 while being melted (on the light reflecting surface 110b side of the semiconductor laser element 50), and the conductivity between the semiconductor laser element 50 on the light reflecting surface 110b side and the base 70 is The adhesive layer 140 is also melted by heat conduction. As a result, as shown in FIG. 11, the conductive adhesive layer 140 changes the thickness from H6 to H5 (see FIG. 9) corresponding to the warped shape of the semiconductor laser element 50. That is, also in the second embodiment, the conductive adhesive layer 140 is fixed to the base 70 by changing the thickness of the conductive adhesive layer 140 according to the warp of the semiconductor laser element 50 without correcting the warp of the semiconductor laser element 50.

  The other manufacturing processes of the second embodiment are the same as the manufacturing processes of the first embodiment. In this manner, a semiconductor laser including the semiconductor laser device 130 according to the second embodiment is manufactured.

  In the second embodiment, as described above, the wire bond portion 115a is provided in the vicinity of the light reflecting surface 110b of the resonator of the semiconductor laser device 50, so that the laser in the resonator is at the time of laser light oscillation. When light is reflected by the light reflecting surface 110b, the heat generated in the ridge 113a due to the absorption of a part of the laser light by the light reflecting surface 110b is caused by the distance between the semiconductor laser element 50 and the base 70. Diffusion into the air efficiently through the wire bond portion 115a provided in the vicinity of the substantially largest region (region where the thickness of the conductive adhesive layer 140 is substantially H5 (about 3 μm) (see FIG. 11)). (Heat dissipation). As a result, the semiconductor laser element portion in a region where the distance between the semiconductor laser device 50 and the base 70 is small (a region where the thickness of the conductive adhesive layer 140 is substantially H6 (about 1 μm) (see FIG. 11)). Since the heat dissipation performance equivalent to the heat dissipation performance from 110 to the base 70 can be obtained, the heat generation temperature distribution in the semiconductor laser element 50 can be made uniform.

  Further, in the second embodiment, the wire bond portion 115a has a distance H5 between the semiconductor laser element 50 and the base 70 in the vicinity of the light reflection surface 110b of the resonator of the semiconductor laser element 50, so that the resonance of the semiconductor laser element 50 occurs. The semiconductor laser device 50 after formation is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the vicinity of the region larger than the distance H6 between the semiconductor laser device 50 and the base 70 in the vicinity of the light emitting surface 110a of the device. , The position where the wire bond portion 115a is formed can be recognized as being on the light reflecting surface 110b side of the resonator. Thereby, the laser beam emission direction (position of the light emission surface 110a) of the semiconductor laser element 50 can be easily identified.

  In the second embodiment, the semiconductor laser element 50 is arranged such that the lower surface side (n-side electrode 101 side) of the light emitting surface 110a of the resonator is substantially parallel to the upper surface 70a of the base 70. It is possible to prevent the laser light emitted from 110a from being disposed in a state in which the emission direction is inclined upward with respect to the surface 70a of the base 70. As a result, it is possible to suppress the emission direction of the laser light emitted from the semiconductor laser element 50 from being varied, so that the assembly yield of the semiconductor laser device 40 can be improved.

  Also in the second embodiment, the p-side electrode 115 and the ridge portion 113a are arranged so that the resonator width direction (arrow C in FIG. 12) extends in the direction in which the resonator of the semiconductor laser element 50 extends (arrow B in FIG. 12). Is formed on the upper surface of the semiconductor laser element portion so as to extend substantially parallel to the center line 500 with a predetermined distance (about 20 μm) from the center line 500 (direction dashed line in FIG. 12). 115a is provided on the upper surface of the insulating film 114 (see FIG. 13) in the region where the ridge portion 113 is not formed, so that the ridge portion 113a and the ohmic layer 116 are disposed immediately below the wire bond portion 115a. Therefore, when the Au wire 90 is bonded, an impact load applied to the wire bond portion 115a from above is applied to the ridge portion 113a and the Au wire 90. Not applied directly to the click layer 116. Thereby, the ridge portion 113a and the ohmic layer 116 can be protected from an impact load during wire bonding.

  The remaining effects of the second embodiment are similar to those of the aforementioned first embodiment.

  FIG. 15 is a diagram showing the position of the wire bond portion on the semiconductor laser device in the simulation for confirming the effect of the second embodiment shown in FIG. FIG. 16 is a diagram showing the results of a simulation performed to confirm the effect of the second embodiment shown in FIG. Next, with reference to FIG. 11, FIG. 12, FIG. 15, and FIG. 16, a simulation performed for confirming the effect of the second embodiment will be described.

  In this simulation, first, as shown in FIG. 15, a heat dissipation model at the time of laser operation of the semiconductor laser device 50 (see FIGS. 11 and 12) according to Example 2 corresponding to the second embodiment described above was created. Further, as Comparative Examples 4 and 5, a heat dissipation model during laser operation of the semiconductor laser element 50 provided with the wire bond portion 115a at a position as shown in FIG. 15 was created. Specifically, in Comparative Example 4, a heat dissipation model was created in which the wire bond portion 115a was provided substantially near the center in the direction in which the resonator extends. In Comparative Example 5, a heat dissipation model was created in which the wire bond portion 115a was provided in the vicinity of the position corresponding to the light exit surface 110a in the direction in which the resonator extends. In this simulation, heat dissipation from the semiconductor laser element portion 110 (see FIG. 11) to the base 70 (see FIG. 11), and the p-side electrode 115 and the wire bonding portion from the semiconductor laser element portion 110 (see FIG. 11). The heat generation temperature distribution of the semiconductor laser element unit 110 was calculated using a heat dissipation model that takes heat dissipation into the air through 115a.

  And the heat generation temperature distribution of the semiconductor element part at the time of laser operation of the semiconductor laser element 50 by the said Example 2, the comparative example 4, and the comparative example 5 was calculated. These simulation results are shown in FIG.

  As shown in FIG. 16, in Comparative Examples 4 and 5, the semiconductor laser element unit 110 obtained heat generation temperature distribution in the extending direction of the resonator. This is because in the region where the thickness of the conductive adhesive layer 140 between the semiconductor laser element portion 110 and the base 70 is large (in the vicinity of the light reflecting surface 110b (see FIG. 11)), the region where the thickness of the conductive adhesive layer 140 is small. Since the heat dissipation performance is relatively inferior to that in the vicinity of the light exit surface 110a (see FIG. 11), the heat generation temperature in this region is considered to be higher. On the other hand, in Example 2, the prediction result that the heat generation temperature distribution in the extending direction of the resonator becomes substantially uniform was obtained. This is because the area where the p-side electrode 115 is in contact with air is provided in another region by providing the wire bond portion 115a in a region (in the vicinity of the light reflecting surface 110b) where the conductive adhesive layer 140 is relatively inferior in heat dissipation performance. This is probably because the heat dissipation performance was improved because the thickness of the conductive adhesive layer 140 increased in comparison with the relatively small center of the resonator and the vicinity of the light emitting surface 110a. From this result, it was confirmed that the heat generation temperature distribution in the semiconductor laser device 110 can be made uniform also in the second embodiment.

(Third embodiment)
FIG. 17 is a sectional view showing the structure of the semiconductor laser device according to the third embodiment of the present invention. FIG. 18 is a plan view showing the structure of the semiconductor laser device according to the third embodiment shown in FIG. FIG. 19 is a perspective view showing the structure of the semiconductor laser device according to the third embodiment shown in FIG. 17 to 19, in the third embodiment, unlike the first embodiment, the semiconductor laser device 50 includes a base 70 in the vicinity of the light emitting surface 110a and the light reflecting surface 110b of the resonator. The case where the distance between the two is fixed to the base 70 so as to be larger than the distance to the base 70 in the vicinity of the center of the resonator will be described.

  In the semiconductor laser device 150 according to the third embodiment, as shown in FIGS. 17 and 19, the semiconductor laser element 50 has a warped convex side (substrate) as in the first and second embodiments. 100 side) and the base 70 via the conductive adhesive layer 160 (see FIG. 17) such as AuSn so that the distance changes along the direction in which the resonator extends (direction B). It is fixed to the base 70.

  In the third embodiment, as shown in FIG. 17, the semiconductor laser element 50 includes a semiconductor laser element 50 and a base 70 in the vicinity of the light emitting surface 110a and the light reflecting surface 110b of the resonator of the semiconductor laser element 50. Distance H7 (thickness of the conductive adhesive layer 160: about 3 μm) is larger than a distance H8 (thickness of the conductive adhesive layer 160: about 1 μm) between the base 70 in the vicinity of the center of the resonator. By forming the conductive adhesive layer 160 as described above, the substrate 100 side is fixed to the base 70 via the conductive adhesive layer 160.

  As shown in FIG. 17, the vicinity of the resonator central portion of the semiconductor laser element 50 is disposed substantially parallel to the upper surface 70 a of the base 70. In other words, the semiconductor laser element 50 is arranged so that the direction of the laser beam transmitted near the center of the resonator is substantially parallel to the direction in which the upper surface 70 a of the base 70 extends.

  In the third embodiment, as shown in FIGS. 18 and 19, the wire bond portion 115 a provided on the p-side electrode 115 of the semiconductor laser element 50 includes the vicinity of the light emitting surface 110 a and the light reflecting surface 110 b of the resonator. Each is provided so as to correspond to the vicinity. That is, the wire bond portion 115a has a region having the largest distance among the distances between the semiconductor laser element 50 and the base 70 (the thickness of the conductive adhesive layer 160 is substantially H7 (see FIG. 17). ) Is provided in the portion (two places) of the p-side electrode 115 corresponding to the vicinity. 18 and 19 show an example in which the Au wire 90 is wire-bonded in the vicinity of the light emitting surface 110a in the B direction.

  In the third embodiment, as shown in FIGS. 18 and 19, the ridge portion 113 a and the p-side electrode 115 of the semiconductor laser element 50 are center lines in the width direction (C direction) of the resonator of the semiconductor laser element 50. It is formed on the upper surface side of the semiconductor laser element portion 110 so as to extend substantially parallel to the center line 500 at a predetermined distance (about 20 μm) from 500 (one-dot chain line) (see FIG. 18). The wire bond portion 115a protrudes from the p-side electrode 115 formed directly above the ridge portion 113a via the ohmic layer 116 in the direction of the arrow C of the semiconductor laser element 50, and the center line 500 (see FIG. 18). It is provided on the upper surface of the insulating film 114 in a region where the ridge portion 113b is not formed.

  The remaining structure of the semiconductor laser device 150 according to the third embodiment is similar to that of the aforementioned first and second embodiments.

  FIG. 20 is a diagram for explaining the manufacturing process of the semiconductor laser provided with the semiconductor laser device according to the third embodiment of the invention. A manufacturing process for the semiconductor laser device 150 according to the third embodiment will be now described with reference to FIGS. 2 and 17 to 20.

  First, the semiconductor laser element 50 is formed by the same manufacturing process as in the first and second embodiments.

  Next, in the third embodiment, as shown in FIG. 17, a distance H7 between the semiconductor laser element 50 and the base 70 in the vicinity of the light emitting surface 110a of the resonator of the semiconductor laser element 50 and in the vicinity of the light reflecting surface 110b. Semiconductor laser so that (the thickness of conductive adhesive layer 160: about 3 μm) is larger than the distance H8 (thickness of conductive adhesive layer 160: about 1 μm) from the base 70 near the center of the resonator. The warped convex side (substrate 100 side) of the element 50 is die-bonded to the base 70. At the same time, the base 70 is fixed to the pedestal portion 82 (see FIG. 2) of the stem 80.

  In the third embodiment, as shown in FIG. 20, the thickness of the conductive adhesive layer 160 is changed in two ways (two steps) in the length direction (B direction) of the resonator. Is disposed on the upper surface 70a. That is, the thickness of the conductive adhesive layer 160 made of solder is increased stepwise from the vicinity of the center of the resonator (thickness: about 1 μm) toward the light emitting surface 110a and the light reflecting surface 110b (at the resonator end portion, the thickness is about (3 μm) so that it is disposed on the upper surface 70 a of the base 70.

  As shown in FIG. 20, the warped convex side (substrate 100 side) of the semiconductor laser element 50 is die-bonded to a base 70 using the same process as in the first and second embodiments. At this time, in a state where the vicinity of the resonator central portion of the semiconductor laser element 50 is pressed in the P direction by the collet 120, the conductive adhesive layer 160 in the region pressed by the collet 120 (near the resonator central portion of the semiconductor laser element 50). Moves to a region that is not pressed by the collet 120 while being melted (on the light emitting surface 110a side and the light reflecting surface 110b side), and the semiconductor laser device 50 and the base on the light emitting surface 110a side and the light reflecting surface 110b side The conductive adhesive layer 160 between them is also melted by heat conduction. As a result, as shown in FIG. 17, the conductive adhesive layer 160 changes the thickness from H8 to H7 (see FIG. 17) corresponding to the warped shape of the semiconductor laser element 50. That is, also in the third embodiment, the thickness of the conductive adhesive layer 160 changes according to the warp of the semiconductor laser element 50 without correcting the warp of the semiconductor laser element 50, so that the semiconductor laser element 50 is fixed to the base 70.

  The other manufacturing processes of the third embodiment are the same as the manufacturing processes of the first and second embodiments. In this manner, a semiconductor laser including the semiconductor laser device 150 according to the third embodiment is manufactured.

  In the third embodiment, as described above, a plurality of (two) wire bond portions 115a are provided in the vicinity of the light emitting surface 110a and the light reflecting surface 110b of the resonator of the semiconductor laser element 50, thereby oscillating the laser light. Sometimes, heat generated by laser light emission (heat generated by scattering of laser light at the light emitting surface 110a and heat generated by the ridge 113a by absorption of laser light at the light reflecting surface 110b) is generated between the semiconductor laser element 50 and the base 70. Through the two wire bond portions 115a provided in the vicinity of the region with the largest distance (region where the thickness of the conductive adhesive layer 160 is substantially H7 (about 3 μm) (see FIG. 17)). It can diffuse (dissipate heat) into the air. As a result, in the vicinity of the center of the resonator where the distance between the semiconductor laser element 50 and the base 70 is small (the region where the thickness of the conductive adhesive layer 160 is substantially H8 (about 1 μm) (see FIG. 17)). Since heat dissipation performance equivalent to the heat dissipation performance from the semiconductor laser element portion 110 to the base 70 can be obtained, the heat generation temperature distribution in the semiconductor laser element 50 can be made uniform.

  The remaining effects of the third embodiment are similar to those of the aforementioned first and second embodiments.

  FIG. 21 is a diagram showing the position of the wire bond portion on the semiconductor laser device in the simulation for confirming the effect of the third embodiment shown in FIG. FIG. 22 is a diagram showing the results of a simulation performed to confirm the effect of the third embodiment shown in FIG. Next, with reference to FIG. 17, FIG. 18, FIG. 21, and FIG. 22, a simulation performed for confirming the effect of the third embodiment will be described.

  In this simulation, first, as shown in FIG. 21, a heat dissipation model during laser operation of the semiconductor laser device 50 (see FIGS. 17 and 18) according to Example 3 corresponding to the above-described third embodiment was created. Further, as Comparative Examples 6 and 7, a heat dissipation model during the laser operation of the semiconductor laser element 50 provided with the wire bond portion 115a at the position shown in FIG. 21 was created. Specifically, in Comparative Example 6, a heat dissipation model was created in which the wire bond portion 115a was provided in the vicinity of the position corresponding to the light exit surface 110a in the direction in which the resonator extends. In Comparative Example 7, a heat dissipation model was created in which the wire bond portion 115a was provided near the position corresponding to the light reflecting surface 110b in the extending direction of the resonator. In this simulation, heat dissipation from the semiconductor laser element portion 110 (see FIG. 17) to the base 70 (see FIG. 17), and the p-side electrode 115 and the wire bonding portion from the semiconductor laser element portion 110 (see FIG. 17). The heat generation temperature distribution of the semiconductor laser element unit 110 was calculated using a heat dissipation model that takes heat dissipation into the air through 115a.

  And the heat generation temperature distribution of the semiconductor element part at the time of laser operation of the semiconductor laser element 50 by the said Example 3, the comparative example 6, and the comparative example 7 was calculated. These simulation results are shown in FIG.

  As shown in FIG. 22, in Comparative Examples 6 and 7, the semiconductor laser element unit 110 obtained heat generation temperature distribution in the extending direction of the resonator. This is because the conductive adhesive layer 160 in the region where the thickness of the conductive adhesive layer 160 between the semiconductor laser element portion 110 and the base 70 is large (near the light emitting surface 110a and the light reflecting surface 110b (see FIG. 17)). Since the heat radiation performance is relatively inferior to that of the region where the thickness of 160 is small (near the center of the resonator (see FIG. 17)), the heat generation temperature in this region is considered to be higher. On the other hand, in Example 3 above, a prediction result was obtained that the heat generation temperature distribution in the direction in which the resonator extends was substantially uniform. This is because the p-side electrode 115 is connected to the air by providing the wire bond portion 115a in a region where the conductive adhesive layer 160 having relatively poor heat dissipation performance is thick (near the light emitting surface 110a and the light reflecting surface 110b). This is considered to be because the heat radiation performance to the air was improved because the touched area increased compared to other regions (near the resonator center where the thickness of the conductive adhesive layer 160 is relatively small). From this result, it was confirmed that the heat generation temperature distribution in the semiconductor laser device 110 can be made uniform in Example 3 as well.

(Fourth embodiment)
23 and 24 are a plan view and a cross-sectional view, respectively, showing the structure of the semiconductor laser device according to the fourth embodiment of the present invention. Referring to FIGS. 3, 23, and 24, in the fourth embodiment, unlike the first embodiment, in addition to the direction in which the resonator extends (direction B), the width direction of the laser element (the extension of the resonator). A case where the semiconductor laser element 95 having a warp in a direction orthogonal to the direction (C direction) is fixed to the base 70 will be described. The C direction is an example of the “second direction” in the present invention. FIG. 24 is a cross-sectional view taken along the line 300-300 of the semiconductor laser device 170 shown in FIG.

  In the semiconductor laser including the semiconductor laser device 170 according to the fourth embodiment, as shown in FIGS. 23 and 24, the semiconductor laser element 95 is bonded to the base via a conductive adhesive layer 60 (see FIG. 24) such as AuSn. It is fixed to the base 70. The semiconductor laser element 95 has a width (W5) of about 800 μm, a length (L4) of about 900 μm, and a thickness (t1) of about 100 μm. The base 70 has a width (W4) of about 900 μm, a length (L5) of about 1000 μm, and a thickness (t3) of about 250 μm. The cross-sectional shape of the semiconductor laser element 95 along the direction in which the resonator extends (direction B) has the same cross-sectional shape as that of the semiconductor laser element 50 shown in FIG.

  Here, in the fourth embodiment, as shown in FIG. 24, the semiconductor laser element 95 is approximately 0 along the width direction (C direction) of the resonator in addition to the direction (B direction) in which the resonator extends. It has a warp of 5 μm to about 3 μm. Therefore, the semiconductor laser element 95 has a warp such that the upper surface (first main surface) side is concave and the lower surface (second main surface) side is convex. The opposite surface is also formed in a concave shape in the width direction (C direction) of the resonator. Thereby, the semiconductor laser element 95 has the convex side (the substrate 100 side) of the warp in the B direction and the C direction fixed to the base 70.

  Further, as shown in FIG. 24, the semiconductor laser element 95 and the base 70 in the vicinity of the center portion in the direction (C direction) along the cavity end face (light emitting surface 110a or light reflecting surface 110b) of the semiconductor laser element 95. (The thickness of the conductive adhesive layer 60) H9 between the semiconductor laser element 95 and the base 70 in the vicinity of the end portions 95a and 95b in the direction (C direction) along the cavity end face of the semiconductor laser element 95. The distance between them (the thickness of the conductive adhesive layer 60) is smaller than H10.

  Here, in the fourth embodiment, as shown in FIG. 23, the wire bond portion 115a provided in the p-side electrode 115 of the semiconductor laser element 95 is provided on the upper surface of the insulating film 114 in the vicinity of the light emitting surface 110a. ing. That is, the wire bond portion 115a is in the vicinity of the region having the largest distance among the distances between the semiconductor laser element 95 and the base 70 (the thickness of the conductive adhesive layer 60 is substantially H3 (FIG. 3 (Refer to the region), the p-side electrode 115 corresponding to the region).

  In addition, as shown in FIG. 24, the wire bond portion 115a is formed in the vicinity of the region having the smallest distance among the distances between the semiconductor laser element 95 and the base 70 along the C direction (conductive bonding). The layer 60 is provided in a portion of the p-side electrode 115 corresponding to a region where the thickness of the layer 60 is substantially H9. That is, the wire bond portion 115 a is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the vicinity of the substantially central portion in the C direction of the semiconductor laser element 95.

  Further, in the fourth embodiment, as shown in FIG. 23, the ridge portion 113a and the p-side electrode 115 of the semiconductor laser element 95 are center lines 500 (1) in the width direction (C direction) of the resonator of the semiconductor laser element 95. It is formed so as to extend substantially parallel to the center line 500 at a predetermined distance (about 20 μm) from the dotted line. The wire bond portion 115a protrudes in the width direction (C direction) of the semiconductor laser element 95 from the p-side electrode 115 formed via the ohmic layer 116 immediately above the ridge portion 113a, and crosses the center line 500. The ridge portion 113b is provided on the upper surface of the insulating film 114 in a region where the ridge portion 113b is not formed.

  The remaining structure and manufacturing process of the semiconductor laser device 170 according to the fourth embodiment are the same as those in the first embodiment.

  In the fourth embodiment, as described above, the distance between the warped convex side of the semiconductor laser element 95 and the base 70 is set so that the distance between the resonator extension direction (B direction) and the resonator By fixing to the base 70 so as to change according to the warp of the semiconductor laser element 95 along the width direction (C direction), the warp of the semiconductor laser element 95 varies not only in the B direction but also in the C direction. Even so, the semiconductor laser element 95 can be fixed to the base 70 without correcting the warp of the semiconductor laser element 95 itself. Thereby, it is possible to suppress the generation of excessive stress due to the correction of the warp in the semiconductor laser element 95. Thereby, it is possible to suppress the deterioration of the laser characteristics and the occurrence of damage to the semiconductor laser element 95 (semiconductor laser element portion 110).

  In the fourth embodiment, the wire bond portion 115 a is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the substantially central portion in the C direction of the semiconductor laser element 95 (a region near the center line 500). In addition to the effect of uniformizing the heat generation temperature distribution in the semiconductor laser element 95 which is the effect of the first embodiment, the semiconductor laser element 95 is provided in a region where the inclination in the C direction with respect to the upper surface 70a of the base 70 is the smallest. Since the Au wire 90 can be wire-bonded to the wire-bonding portion 115a, the semiconductor laser is different from the case where the wire-bonding is performed on the portion of the p-side electrode 115 corresponding to the region where the inclination in the C direction of the semiconductor laser element 95 is large. Excessive stress is suppressed from being applied to the element 95 during wire bonding. Thereby, it is possible to further suppress the deterioration of the laser characteristics and the occurrence of damage to the semiconductor laser element 95 (semiconductor laser element portion 110).

  In the fourth embodiment, the wire bond portion 115a is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the vicinity of the substantially central portion in the C direction of the semiconductor laser element 95, whereby the wire bond portion 115a is provided in the semiconductor laser element. Compared to the case where the p-side electrode 115 corresponding to the vicinity of the end portion 95a or 95b in the C direction of 95 is provided, a mounting dimension error in the C direction when wire bonding the Au wire 90 is allowed to be larger. can do. Thereby, the assembly yield of the semiconductor laser device 40 can be improved.

  Further, in the fourth embodiment, the ridge portion 113a and the wire bond portion 115a are opposite to each other across the substantially central portion (region near the center line 500) of the semiconductor laser element 95 in the width direction (C direction) of the resonator. By forming in this direction, the wire bond portion 115a can be disposed closer to the center line 500 by the amount the ridge portion 113a is shifted from the center line 500 to one side in the C direction. Thereby, wire bonding can be performed on the wire bonding portion 115a provided in a region where the inclination of the semiconductor laser element 95 with respect to the upper surface 70a of the base 70 is the smallest in the C direction. In addition, it is possible to suppress the impact load applied from above to the wire bond portion 115 a from being applied in the width direction (C direction) of the semiconductor laser element 95 during wire bonding. The remaining effects of the fourth embodiment are similar to those of the aforementioned first embodiment.

(Fifth embodiment)
FIG. 25 is a plan view showing the structure of the semiconductor laser device according to the fifth embodiment of the present invention. Referring to FIGS. 11, 24 and 25, in the semiconductor laser device 180 according to the fifth embodiment, unlike the fourth embodiment, the semiconductor laser element 95 has a base in the vicinity of the light reflecting surface 110b of the resonator. A case where the distance to the base 70 is fixed to the base 70 so as to be larger than the distance in the vicinity of the light exit surface 110a will be described.

  Here, in the semiconductor laser device 180 according to the fifth embodiment, similarly to the cross-sectional shape in the B direction of the semiconductor laser element 50 shown in FIG. The distance between the element 95 and the base 70 (corresponding to the distance H5 in FIG. 11) is the distance between the semiconductor laser element 95 and the base 70 in the vicinity of the light emitting surface 110a of the resonator (the distance in FIG. 11). It is fixed to the base 70 via a conductive adhesive layer 60 formed to be larger than (corresponding to H6).

  Similarly to the cross-sectional shape in the C direction of the semiconductor laser element 95 shown in FIG. 24, the semiconductor laser in the vicinity of the central portion in the direction (C direction) along the cavity end face (light emitting surface 110a or light reflecting surface 110b). The distance between the element 95 and the base 70 (corresponding to the distance H9 in FIG. 24) is the semiconductor laser element 95 and the base 70 in the vicinity of the ends 95a and 95b in the direction along the resonator end face (C direction). Is smaller than the distance (corresponding to the distance H10 in FIG. 24).

  Here, in the fifth embodiment, as shown in FIG. 25, the wire bond portion 115a provided in the p-side electrode 115 of the semiconductor laser element 95 is provided on the upper surface of the insulating film 114 in the vicinity of the light reflecting surface 110b. ing. That is, the wire bond portion 115a is in the vicinity of the region having the largest distance among the distances between the semiconductor laser element 95 and the base 70 (the thickness of the conductive adhesive layer 60 is substantially H5 (FIG. 11 (Refer to the region), the p-side electrode 115 corresponding to the region).

  Also, the wire bond portion 115a is in the vicinity of the region having the smallest distance among the distances along the C direction between the semiconductor laser element 95 and the base 70, similarly to the cross-sectional shape shown in FIG. It is provided in the portion of the p-side electrode 115 corresponding to (region where the thickness of the conductive adhesive layer 60 is substantially H9). That is, the wire bond portion 115 a is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the vicinity of the substantially central portion in the C direction of the semiconductor laser element 95.

  The remaining structure and manufacturing process of the semiconductor laser device 180 according to the fifth embodiment are similar to those of the aforementioned fourth embodiment.

  In the fifth embodiment, as described above, the wire bond portion 115a is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the substantially central portion of the semiconductor laser element 95 in the C direction (region near the center line 500). Thus, in addition to the effect of making the heat generation temperature distribution in the semiconductor laser element 95 uniform, which is the effect of the second embodiment, in the region where the inclination in the C direction with respect to the upper surface 70a of the base 70 of the semiconductor laser element 95 is the smallest. Since the Au wire 90 can be bonded to the provided wire bonding portion 115a, unlike the case where the wire bonding is performed to the portion of the p-side electrode 115 corresponding to the region where the inclination in the C direction of the semiconductor laser element 95 is large. Further, an excessive stress is suppressed from being applied to the semiconductor laser element 95 at the time of wire bonding. Thereby, it is possible to further suppress the deterioration of the laser characteristics and the occurrence of damage to the semiconductor laser element 95 (semiconductor laser element portion 110). The remaining effects of the fifth embodiment are similar to those of the aforementioned second and fourth embodiments.

(Sixth embodiment)
FIG. 26 is a plan view showing the structure of the semiconductor laser device according to the sixth embodiment of the present invention. Referring to FIGS. 17, 24 and 26, in the semiconductor laser device 190 in the sixth embodiment, unlike the fourth embodiment, the semiconductor laser element 95 includes a base 70 in the vicinity of the center of the resonator. A case will be described in which the distance between the two is fixed to the base 70 so as to be smaller than the distance to the base 70 in the vicinity of the light reflection surface 110b and the light emission surface 110a of the resonator.

  Here, in the semiconductor laser device 190 according to the sixth embodiment, similarly to the cross-sectional shape of the semiconductor laser element 50 in the B direction shown in FIG. (Corresponding to the distance H7 in FIG. 17) is the distance between the semiconductor laser element 95 and the base 70 in the vicinity of the light reflecting surface 110b and the light emitting surface 110a of the resonator (the distance H8 in FIG. 17). It is fixed to the base 70 through a conductive adhesive layer 60 formed so as to be smaller than

  Similarly to the cross-sectional shape in the C direction of the semiconductor laser element 95 shown in FIG. 24, the semiconductor laser in the vicinity of the central portion in the direction (C direction) along the cavity end face (light emitting surface 110a or light reflecting surface 110b). The distance between the element 95 and the base 70 (corresponding to the distance H9 in FIG. 18) is the distance between the semiconductor laser element 95 and the base 70 in the vicinity of the end 95a in the direction along the resonator end face (direction C). It is smaller than the distance between them (corresponding to the distance H10 in FIG. 24).

  Here, in the sixth embodiment, as shown in FIG. 26, the wire bond portion 115a provided on the p-side electrode 115 of the semiconductor laser element 95 is located in the vicinity of the light emitting surface 110a and the light reflecting surface 110b of the resonator. Each is provided to correspond. That is, the wire bond portion 115a is a region having the largest distance among the distances between the semiconductor laser element 95 and the base 70 (the thickness of the conductive adhesive layer 60 is substantially H7 (see FIG. 17). ) Is provided in the portion (two places) of the p-side electrode 115 corresponding to the vicinity. FIG. 26 shows an example in which the Au wire 90 is wire-bonded near the light emitting surface 110a in the B direction.

  The two wire bond portions 115a have substantially the smallest distance among the distances along the C direction between the semiconductor laser element 95 and the base 70, similarly to the cross-sectional shape shown in FIG. The p-side electrode 115 corresponding to the vicinity of the region (region where the thickness of the conductive adhesive layer 60 is substantially H9) is provided. That is, the two wire bond portions 115 a are provided in the vicinity of the portion of the p-side electrode 115 corresponding to the vicinity of the substantially central portion in the C direction of the semiconductor laser element 95.

  The remaining structure and manufacturing process of the semiconductor laser device 190 according to the sixth embodiment are similar to those of the aforementioned fourth embodiment.

  In the sixth embodiment, as described above, the wire bond portion 115a is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the substantially central portion of the semiconductor laser element 95 in the C direction (region near the center line 500). Thus, in addition to the effect of uniforming the heat generation temperature distribution in the semiconductor laser element 95, which is the effect of the third embodiment, in the region where the inclination in the C direction with respect to the upper surface 70a of the base 70 of the semiconductor laser element 95 is the smallest. Since wire bonding can be performed on the provided wire bonding portion 115a, unlike the case where the wire bonding of the Au wire 90 is performed on the portion of the p-side electrode 115 corresponding to the region where the inclination in the C direction of the semiconductor laser element 95 is large. Further, an excessive stress is suppressed from being applied to the semiconductor laser element 95 at the time of wire bonding. Thereby, it is possible to further suppress the deterioration of the laser characteristics and the occurrence of damage to the semiconductor laser element 95 (semiconductor laser element portion 110). The remaining effects of the sixth embodiment are similar to those of the aforementioned third and fourth embodiments.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above-described embodiment, an example in which the semiconductor laser element portion is configured by a nitride-based semiconductor layer has been described. However, the present invention is not limited to this, and the semiconductor laser element portion may be a semiconductor layer other than the nitride-based semiconductor layer. You may comprise by.

  In the above embodiment, the example in which the fusion bonding layer for fixing the semiconductor laser element to the base is a conductive adhesive layer made of solder has been described. However, the present invention is not limited thereto, and the semiconductor laser element is based on the base. A conductive adhesive layer made of a material other than solder may be used as the fusion layer fixed to the substrate.

  In the first and fourth embodiments, the example in which the light reflecting surface side of the semiconductor laser element is arranged substantially parallel to the upper surface of the base is shown. However, the present invention is not limited to this, and the semiconductor laser element The light reflecting surface side may not be disposed substantially parallel to the upper surface of the base.

  In the second and fifth embodiments, the example in which the light emitting surface side of the semiconductor laser element is arranged substantially parallel to the upper surface of the base is shown. However, the present invention is not limited to this, and the semiconductor laser element The light emitting surface side need not be arranged substantially parallel to the upper surface of the base.

  In the third and sixth embodiments, the example in which the vicinity of the resonator central portion of the semiconductor laser element is disposed substantially parallel to the upper surface of the base has been described. However, the present invention is not limited to this, and the semiconductor laser element is not limited thereto. The vicinity of the center of the resonator may not be arranged substantially parallel to the upper surface of the base.

  In the above embodiment, an example in which the semiconductor laser element is pressed against the base using a collet when the semiconductor laser element is fixed to the base has been described, but the present invention is not limited thereto, and the semiconductor laser element is not limited to this. When fixing to the base, the semiconductor laser element may be pressed against the base using a member other than the collet.

  In the above embodiment, in the manufacturing process, the thickness of the conductive adhesive layer is changed in three ways (three steps) and two ways (two steps) in the length direction of the resonator on the upper surface of the base. However, the present invention is not limited to this, and the thickness of the conductive adhesive layer may be changed to other than three ways (three steps) and two ways (two steps) in the length direction of the resonator. It may be arranged on the upper surface of the base.

  In the above-described embodiment, an example in which the p-side electrode 115 and the wire bond portion 115a are configured to have the same thickness (about 5.2 μm) is shown. However, the present invention is not limited thereto, and the wire bond portion The thickness of 115a may be different from that of the p-side electrode 115. If comprised like this modification, the heat dissipation performance (heat transfer rate) from the wire bond part 115a to the air can be improved more by optimizing the contact area with the air in the wire bond part 115a. Therefore, the heat generation temperature distribution in the semiconductor laser element can be made more uniform.

  In the above embodiment, the wire bond portion 115a is provided in the vicinity of the portion of the p-side electrode 115 corresponding to the ridge portion 113a provided in the vicinity of the substantially central portion in the width direction (C direction) of the semiconductor laser element. However, the present invention is not limited to this, and the ridge portion 113a of the semiconductor laser element having a warp in the width direction (C direction) of the semiconductor laser element is formed between the end of the semiconductor laser element in the C direction and the base. In the case where the distance is substantially fixed to the base so as to have the largest distance, the wire bond portion is formed on the p-side electrode corresponding to the vicinity of the end portion in the C direction of the semiconductor laser element on which the ridge portion is formed. You may make it provide in the vicinity of a part.

  Moreover, in the said embodiment, the example which provided the wire bond part 115a in the position corresponding to the area | region vicinity where the distance along the B direction of a semiconductor laser element and the base 70 has the substantially largest distance was shown. However, the present invention is not limited to this, and the wire bond portion 115a is disposed in the vicinity of the position of the p-side electrode 115 corresponding to the vicinity of the region where the distance between the semiconductor laser element and the base 70 is substantially the largest (predetermined). The position may be provided at a position within the range.

  In the first embodiment, the wire bond portion 115a of the p-side electrode 115 of the semiconductor laser element is located at a position corresponding to the vicinity of the region where the distance between the semiconductor laser element and the base 70 is substantially the largest. In addition, an example in which the p-side electrode 115 is provided so as to protrude from the p-side electrode 115 in the width direction (C direction) of the semiconductor laser element is shown, but the present invention is not limited to this and is shown in FIG. As in the modification of the first embodiment, the wire bond portion 115a of the semiconductor laser device 210 may be formed so as to extend over the entire region in the direction (B direction) in which the p-side electrode 115 of the semiconductor laser element 50 extends. Good. In FIG. 27, the p-side electrode 115 including the wire bond portion 115a has a width W8 of about 110 μm in the C direction. Further, in the vicinity of the light emitting surface 110a side of the semiconductor laser element 50, and in the vicinity of the area where the distance between the semiconductor laser element 50 and the base 70 in the wire bond portion 115a is substantially the largest. You may comprise so that the wire bond part 115b (inside a broken-line frame) for actually wire-bonding Au wire may be provided in the vicinity of the corresponding part. According to this modification, in addition to the effects of the first embodiment, the surface area of the p-side electrode 115 including the wire bond portion 115a can be increased along the B direction. Can be used to further improve the heat dissipation of the semiconductor laser device.

  In the modification of the first embodiment, the wire bond portion 115b is a region near the light emitting surface 110a side of the semiconductor laser element 50, and the semiconductor laser element and the base of the p-side electrode 115 of the semiconductor laser element. Although the example provided in the vicinity region of the wire bond portion 115a corresponding to the vicinity of the region where the distance from the base 70 is substantially the largest is shown, the present invention is not limited to this and is shown in FIG. As in the modification of the second embodiment, the wire bond portion 115b (inside the broken line frame) of the semiconductor laser device 220 is a region near the light reflecting surface 110b side of the semiconductor laser element 50, and the semiconductor laser element 50 You may comprise so that it may provide in the vicinity area | region of the wire bond part 115a of the part corresponding to the area | region vicinity where the distance with the base 70 becomes the largest distance substantially. If configured as in this modification, in addition to the effect of the second embodiment, the surface area of the p-side electrode 115 including the wire bond portion 115a can be increased along the B direction. The heat dissipation can be further improved.

  In the modification of the second embodiment, the wire bond portion 115b is a region near the light reflecting surface 110b side of the semiconductor laser element 50, and the distance between the semiconductor laser element 50 and the base 70 is substantially equal. However, the present invention is not limited to this, and the modification of the third embodiment shown in FIG. 29 is not limited thereto. As described above, the wire bond portion 115b (inside the broken line frame) of the semiconductor laser device 230 is a region near the light emitting surface 110a and the light reflecting surface 110b of the semiconductor laser device 50, and the semiconductor laser device 50 and the base 70. It may be configured to be provided in a region near the wire bond portion 115a in a portion corresponding to the vicinity of the region where the distance to is substantially the largest. If configured as in this modification, in addition to the effects of the third embodiment, the surface area of the p-side electrode 115 can be increased, so that the heat dissipation of the semiconductor laser device can be further improved.

  In the above embodiment, as shown in FIG. 2, the p-side electrode 115 (wire bond portion 115 a) of the semiconductor laser element 50 and the lead terminal 83 on the stem 80 side are connected using a single Au wire 90. Although an example has been described, the present invention is not limited to this, and the p-side electrode 115 and the lead terminal 83 may be connected using a plurality of (for example, three) Au wires. If configured as in the second modification, the number of Au wires connected to the p-side electrode 115 increases, so in addition to the effects of the above embodiment and the modification of the above embodiment, the heat generation of the semiconductor laser element. Can be effectively radiated to the outside of the semiconductor laser device via a plurality of Au wires and lead terminals.

It is sectional drawing for demonstrating the schematic structure of the semiconductor laser apparatus of this invention. It is the perspective view which showed the structure of the semiconductor laser provided with the semiconductor laser apparatus by 1st Embodiment of this invention. FIG. 3 is a cross-sectional view showing the structure of the semiconductor laser device according to the first embodiment shown in FIG. 2. FIG. 3 is a plan view showing the structure of the semiconductor laser device according to the first embodiment shown in FIG. 2. It is the perspective view which showed the structure of the semiconductor laser element of the semiconductor laser apparatus by 1st Embodiment shown in FIG. FIG. 5 is a cross-sectional view taken along line 400-400 in FIG. 4. FIG. 5 is a cross-sectional view taken along line 300-300 in FIG. 4. It is a figure for demonstrating the manufacturing process of the semiconductor laser provided with the semiconductor laser apparatus by 1st Embodiment of this invention. It is the figure which showed the position of the wire bond part on the semiconductor laser element in the simulation for confirming the effect of 1st Embodiment shown in FIG. It is the figure which showed the result of the simulation performed in order to confirm the effect of 1st Embodiment shown in FIG. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 2nd Embodiment of this invention. It is the top view which showed the structure of the semiconductor laser apparatus by 2nd Embodiment shown in FIG. It is the perspective view which showed the structure of the semiconductor laser apparatus by 2nd Embodiment shown in FIG. It is a figure for demonstrating the manufacturing process of the semiconductor laser provided with the semiconductor laser apparatus by 2nd Embodiment of this invention. It is the figure which showed the position of the wire bond part on the semiconductor laser element in the simulation for confirming the effect of 2nd Embodiment shown in FIG. It is the figure which showed the result of the simulation performed in order to confirm the effect of 2nd Embodiment shown in FIG. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 3rd Embodiment of this invention. FIG. 18 is a plan view showing the structure of the semiconductor laser device according to the third embodiment shown in FIG. 17. FIG. 18 is a perspective view showing the structure of the semiconductor laser device according to the third embodiment shown in FIG. 17. It is a figure for demonstrating the manufacturing process of the semiconductor laser provided with the semiconductor laser apparatus by 3rd Embodiment of this invention. It is the figure which showed the position of the wire bond part on the semiconductor laser element in the simulation for confirming the effect of 3rd Embodiment shown in FIG. It is the figure which showed the result of the simulation performed in order to confirm the effect of 3rd Embodiment shown in FIG. It is the top view which showed the structure of the semiconductor laser apparatus by 4th Embodiment of this invention. It is sectional drawing which showed the structure of the semiconductor laser apparatus by 4th Embodiment shown in FIG. It is the top view which showed the structure of the semiconductor laser apparatus by 5th Embodiment of this invention. It is the top view which showed the structure of the semiconductor laser apparatus by 6th Embodiment of this invention. It is a top view for demonstrating the modification of the semiconductor laser apparatus by 1st Embodiment of this invention. It is a top view for demonstrating the modification of the semiconductor laser apparatus by 2nd Embodiment of this invention. It is a top view for demonstrating the modification of the semiconductor laser apparatus by 3rd Embodiment of this invention.

Explanation of symbols

1, 40, 130, 150, 170, 180, 190, 210, 220, 230 Semiconductor laser device 10, 50, 95 Semiconductor laser device 10a, 110a Light exit surface (light exit end)
10b, 110b Light reflecting surface (light reflecting end)
20, 60, 140, 160 Conductive adhesive layer (fusion layer)
30, 70 Base 100 Substrate 110 Semiconductor laser element 111 n-type AlGaN cladding layer (nitride-based semiconductor layer)
112 Active layer (nitride semiconductor layer)
113 p-type AlGaN cladding layer (nitride-based semiconductor layer)
113a Ridge part 115 p-side electrode (electrode layer)
115a, 115b Wire bond part

Claims (9)

A semiconductor laser element having a warp along a first direction in which the resonator extends;
An electrode layer formed on the concave surface of the warp of the semiconductor laser element and provided with a wire bond portion;
A base on which the convex side of the warp of the semiconductor laser element is fixed;
The semiconductor laser element is arranged on the base so that a distance between the convex side of the warp of the semiconductor laser element and the base changes according to the warp of the semiconductor laser element along the first direction. The wire bond portion is fixed in the vicinity of the portion of the electrode layer corresponding to the vicinity of the region having the largest distance among the distance between the convex side of the warp of the semiconductor laser element and the base. A semiconductor laser device provided. The semiconductor laser element includes a substrate and a semiconductor laser element portion formed on the surface of the substrate,
The semiconductor laser element is fixed to the base via a fusion layer so that the substrate side faces the base,
The thickness of the fusion layer is formed so as to change in accordance with the warp of the semiconductor laser element along the first direction in a region sandwiched between the substrate and the base. The semiconductor laser device described in 1.   The semiconductor laser device according to claim 2, wherein the fusion layer is a conductive adhesive layer made of solder.   The semiconductor laser device according to claim 1, wherein the semiconductor laser element includes a semiconductor laser element portion having a nitride-based semiconductor layer.   5. The semiconductor laser device according to claim 1, wherein the wire bond portion is provided in the vicinity of one end in the vicinity of the light emitting end or the light reflecting end of the resonator.   The semiconductor laser element has a warp along a second direction intersecting the first direction, and the semiconductor laser element has a distance between a convex side of the warp of the semiconductor laser element and the base. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is fixed to the base so as to change in accordance with a warp of the semiconductor laser element along the second direction.   The semiconductor laser device according to claim 6, wherein the wire bond portion is provided in the vicinity of the portion of the electrode layer corresponding to the vicinity of the central portion in the second direction.   The electrode layer is provided along the first direction, and the wire bond portion is provided so as to extend along a direction in which the electrode layer extends. Semiconductor laser device. On the upper surface of the semiconductor laser element, a ridge portion connected to the electrode layer is formed,
The semiconductor laser device according to claim 1, wherein the wire bond portion is provided in a region other than a region where the ridge portion is formed.

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