TWI406425B - 像素陣列上之非對稱微透鏡 - Google Patents

像素陣列上之非對稱微透鏡 Download PDF

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Publication number
TWI406425B
TWI406425B TW095118203A TW95118203A TWI406425B TW I406425 B TWI406425 B TW I406425B TW 095118203 A TW095118203 A TW 095118203A TW 95118203 A TW95118203 A TW 95118203A TW I406425 B TWI406425 B TW I406425B
Authority
TW
Taiwan
Prior art keywords
photosensitive
stations
microlenses
asymmetric
image sensor
Prior art date
Application number
TW095118203A
Other languages
English (en)
Chinese (zh)
Other versions
TW200711156A (en
Inventor
麥可葛拉希 羅伯特Ｄ
偉克 羅納德Ｗ
Original Assignee
豪威科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 豪威科技股份有限公司 filed Critical 豪威科技股份有限公司
Publication of TW200711156A publication Critical patent/TW200711156A/zh
Application granted granted Critical
Publication of TWI406425B publication Critical patent/TWI406425B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW095118203A 2005-06-01 2006-05-23 像素陣列上之非對稱微透鏡 TWI406425B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US68610605P 2005-06-01 2005-06-01
US11/253,915 US7456380B2 (en) 2005-06-01 2005-10-18 Asymmetrical microlenses on pixel arrays

Publications (2)

Publication Number Publication Date
TW200711156A TW200711156A (en) 2007-03-16
TWI406425B true TWI406425B (zh) 2013-08-21

Family

ID=36809127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118203A TWI406425B (zh) 2005-06-01 2006-05-23 像素陣列上之非對稱微透鏡

Country Status (7)

Country Link
US (1) US7456380B2 (enExample)
EP (1) EP1894253B1 (enExample)
JP (1) JP4884465B2 (enExample)
KR (1) KR101274305B1 (enExample)
CN (1) CN101189731B (enExample)
TW (1) TWI406425B (enExample)
WO (1) WO2006130517A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7456380B2 (en) * 2005-06-01 2008-11-25 Eastman Kodak Company Asymmetrical microlenses on pixel arrays
JP2007208817A (ja) * 2006-02-03 2007-08-16 Toshiba Corp 固体撮像装置
JP5277565B2 (ja) * 2007-05-31 2013-08-28 富士通セミコンダクター株式会社 固体撮像素子
US9153614B2 (en) * 2007-08-15 2015-10-06 Micron Technology, Inc. Method and apparatus for lens alignment for optically sensitive devices and systems implementing same
JP2009289927A (ja) * 2008-05-28 2009-12-10 Panasonic Corp 固体撮像装置及びその製造方法
JP2009302483A (ja) * 2008-06-17 2009-12-24 Panasonic Corp 固体撮像装置及びその製造方法
US9444985B2 (en) 2012-05-03 2016-09-13 Semiconductor Components Industries, Llc Reduced height camera modules
CN105745640B (zh) 2014-10-31 2018-09-11 华为技术有限公司 访问文件的方法、系统和主机
US9911774B2 (en) * 2015-04-14 2018-03-06 Massachusetts Institute Of Technology Photodiode placement for cross talk suppression
US9936129B2 (en) 2016-06-15 2018-04-03 Obsidian Sensors, Inc. Generating high resolution images
US10015389B2 (en) * 2016-09-22 2018-07-03 Omnivision Technologies, Inc. Image sensor with asymmetric-microlens phase-detection auto-focus (PDAF) detectors, associated PDAF imaging system, and associated method
EP4139641A1 (en) 2020-04-24 2023-03-01 Meta Platforms Technologies, Llc Polarimetric imaging camera
US20220139990A1 (en) * 2020-11-04 2022-05-05 Facebook Technologies, Llc Polarimetric imaging camera
KR102629588B1 (ko) * 2021-11-02 2024-01-25 삼성전자주식회사 나노 광학 마이크로렌즈 어레이를 구비하는 광학 센서 및 이를 포함하는 전자 장치
EP4496331A1 (en) * 2023-07-21 2025-01-22 Hexagon Technology Center GmbH Aerial camera with electronic global shutter and external shutter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536455A (en) * 1994-01-03 1996-07-16 Omron Corporation Method of manufacturing lens array
TWM289853U (en) * 2005-11-02 2006-04-21 Pixart Imaging Inc Socket for testing image sensor
TW200711156A (en) * 2005-06-01 2007-03-16 Eastman Kodak Co Asymmetrical microlenses on pixel arrays

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19545484C2 (de) * 1995-12-06 2002-06-20 Deutsche Telekom Ag Bildaufnahmeeinrichtung
US6829087B2 (en) 1998-04-15 2004-12-07 Bright View Technologies, Inc. Micro-lens array based light transmitting screen with tunable gain
WO2002049366A1 (en) 2000-12-14 2002-06-20 3Dv Systems, Ltd. 3d camera
US6709796B2 (en) * 2002-06-12 2004-03-23 Eastman Kodak Company Camera speed color film with base side micro-lenses
US7227692B2 (en) 2003-10-09 2007-06-05 Micron Technology, Inc Method and apparatus for balancing color response of imagers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536455A (en) * 1994-01-03 1996-07-16 Omron Corporation Method of manufacturing lens array
TW200711156A (en) * 2005-06-01 2007-03-16 Eastman Kodak Co Asymmetrical microlenses on pixel arrays
TWM289853U (en) * 2005-11-02 2006-04-21 Pixart Imaging Inc Socket for testing image sensor

Also Published As

Publication number Publication date
CN101189731A (zh) 2008-05-28
US20060273239A1 (en) 2006-12-07
KR101274305B1 (ko) 2013-06-13
EP1894253B1 (en) 2011-07-13
WO2006130517A1 (en) 2006-12-07
JP2008546200A (ja) 2008-12-18
KR20080019598A (ko) 2008-03-04
JP4884465B2 (ja) 2012-02-29
CN101189731B (zh) 2012-10-10
US7456380B2 (en) 2008-11-25
TW200711156A (en) 2007-03-16
EP1894253A1 (en) 2008-03-05

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