TWI406425B - 像素陣列上之非對稱微透鏡 - Google Patents
像素陣列上之非對稱微透鏡 Download PDFInfo
- Publication number
- TWI406425B TWI406425B TW095118203A TW95118203A TWI406425B TW I406425 B TWI406425 B TW I406425B TW 095118203 A TW095118203 A TW 095118203A TW 95118203 A TW95118203 A TW 95118203A TW I406425 B TWI406425 B TW I406425B
- Authority
- TW
- Taiwan
- Prior art keywords
- photosensitive
- stations
- microlenses
- asymmetric
- image sensor
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68610605P | 2005-06-01 | 2005-06-01 | |
| US11/253,915 US7456380B2 (en) | 2005-06-01 | 2005-10-18 | Asymmetrical microlenses on pixel arrays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200711156A TW200711156A (en) | 2007-03-16 |
| TWI406425B true TWI406425B (zh) | 2013-08-21 |
Family
ID=36809127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095118203A TWI406425B (zh) | 2005-06-01 | 2006-05-23 | 像素陣列上之非對稱微透鏡 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7456380B2 (enExample) |
| EP (1) | EP1894253B1 (enExample) |
| JP (1) | JP4884465B2 (enExample) |
| KR (1) | KR101274305B1 (enExample) |
| CN (1) | CN101189731B (enExample) |
| TW (1) | TWI406425B (enExample) |
| WO (1) | WO2006130517A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7456380B2 (en) * | 2005-06-01 | 2008-11-25 | Eastman Kodak Company | Asymmetrical microlenses on pixel arrays |
| JP2007208817A (ja) * | 2006-02-03 | 2007-08-16 | Toshiba Corp | 固体撮像装置 |
| JP5277565B2 (ja) * | 2007-05-31 | 2013-08-28 | 富士通セミコンダクター株式会社 | 固体撮像素子 |
| US9153614B2 (en) * | 2007-08-15 | 2015-10-06 | Micron Technology, Inc. | Method and apparatus for lens alignment for optically sensitive devices and systems implementing same |
| JP2009289927A (ja) * | 2008-05-28 | 2009-12-10 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| JP2009302483A (ja) * | 2008-06-17 | 2009-12-24 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| US9444985B2 (en) | 2012-05-03 | 2016-09-13 | Semiconductor Components Industries, Llc | Reduced height camera modules |
| JP6379291B2 (ja) | 2014-10-31 | 2018-08-22 | 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． | ファイルアクセス方法、システム、及びホスト |
| US9911774B2 (en) * | 2015-04-14 | 2018-03-06 | Massachusetts Institute Of Technology | Photodiode placement for cross talk suppression |
| US9936129B2 (en) | 2016-06-15 | 2018-04-03 | Obsidian Sensors, Inc. | Generating high resolution images |
| US10015389B2 (en) * | 2016-09-22 | 2018-07-03 | Omnivision Technologies, Inc. | Image sensor with asymmetric-microlens phase-detection auto-focus (PDAF) detectors, associated PDAF imaging system, and associated method |
| CN115516283A (zh) | 2020-04-24 | 2022-12-23 | 元平台技术有限公司 | 偏振成像摄像头 |
| US20220139990A1 (en) * | 2020-11-04 | 2022-05-05 | Facebook Technologies, Llc | Polarimetric imaging camera |
| KR102629588B1 (ko) * | 2021-11-02 | 2024-01-25 | 삼성전자주식회사 | 나노 광학 마이크로렌즈 어레이를 구비하는 광학 센서 및 이를 포함하는 전자 장치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5536455A (en) * | 1994-01-03 | 1996-07-16 | Omron Corporation | Method of manufacturing lens array |
| TWM289853U (en) * | 2005-11-02 | 2006-04-21 | Pixart Imaging Inc | Socket for testing image sensor |
| TW200711156A (en) * | 2005-06-01 | 2007-03-16 | Eastman Kodak Co | Asymmetrical microlenses on pixel arrays |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19545484C2 (de) | 1995-12-06 | 2002-06-20 | Deutsche Telekom Ag | Bildaufnahmeeinrichtung |
| US6829087B2 (en) * | 1998-04-15 | 2004-12-07 | Bright View Technologies, Inc. | Micro-lens array based light transmitting screen with tunable gain |
| AU2001218821A1 (en) | 2000-12-14 | 2002-06-24 | 3Dv Systems Ltd. | 3d camera |
| US6709796B2 (en) * | 2002-06-12 | 2004-03-23 | Eastman Kodak Company | Camera speed color film with base side micro-lenses |
| US7227692B2 (en) * | 2003-10-09 | 2007-06-05 | Micron Technology, Inc | Method and apparatus for balancing color response of imagers |
-
2005
- 2005-10-18 US US11/253,915 patent/US7456380B2/en not_active Expired - Lifetime
-
2006
- 2006-05-23 TW TW095118203A patent/TWI406425B/zh active
- 2006-05-26 WO PCT/US2006/020585 patent/WO2006130517A1/en not_active Ceased
- 2006-05-26 CN CN2006800194208A patent/CN101189731B/zh active Active
- 2006-05-26 KR KR1020077027729A patent/KR101274305B1/ko active Active
- 2006-05-26 JP JP2008514727A patent/JP4884465B2/ja active Active
- 2006-05-26 EP EP06771388A patent/EP1894253B1/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5536455A (en) * | 1994-01-03 | 1996-07-16 | Omron Corporation | Method of manufacturing lens array |
| TW200711156A (en) * | 2005-06-01 | 2007-03-16 | Eastman Kodak Co | Asymmetrical microlenses on pixel arrays |
| TWM289853U (en) * | 2005-11-02 | 2006-04-21 | Pixart Imaging Inc | Socket for testing image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1894253B1 (en) | 2011-07-13 |
| WO2006130517A1 (en) | 2006-12-07 |
| TW200711156A (en) | 2007-03-16 |
| KR101274305B1 (ko) | 2013-06-13 |
| KR20080019598A (ko) | 2008-03-04 |
| US7456380B2 (en) | 2008-11-25 |
| CN101189731A (zh) | 2008-05-28 |
| CN101189731B (zh) | 2012-10-10 |
| JP2008546200A (ja) | 2008-12-18 |
| US20060273239A1 (en) | 2006-12-07 |
| JP4884465B2 (ja) | 2012-02-29 |
| EP1894253A1 (en) | 2008-03-05 |
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