CN101189731B - 像素阵列上的非对称微透镜 - Google Patents

像素阵列上的非对称微透镜 Download PDF

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Publication number
CN101189731B
CN101189731B CN2006800194208A CN200680019420A CN101189731B CN 101189731 B CN101189731 B CN 101189731B CN 2006800194208 A CN2006800194208 A CN 2006800194208A CN 200680019420 A CN200680019420 A CN 200680019420A CN 101189731 B CN101189731 B CN 101189731B
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CN
China
Prior art keywords
microlens
microlenses
photosensitive
image sensor
pixels
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CN2006800194208A
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English (en)
Chinese (zh)
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CN101189731A (zh
Inventor
R·D·麦格拉思
R·W·沃克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision Technologies Inc
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Eastman Kodak Co
Omnivision Technologies Inc
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Publication of CN101189731A publication Critical patent/CN101189731A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2006800194208A 2005-06-01 2006-05-26 像素阵列上的非对称微透镜 Active CN101189731B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US68610605P 2005-06-01 2005-06-01
US60/686,106 2005-06-01
US11/253,915 US7456380B2 (en) 2005-06-01 2005-10-18 Asymmetrical microlenses on pixel arrays
US11/253,915 2005-10-18
PCT/US2006/020585 WO2006130517A1 (en) 2005-06-01 2006-05-26 Asymmetrical microlenses on pixel arrays

Publications (2)

Publication Number Publication Date
CN101189731A CN101189731A (zh) 2008-05-28
CN101189731B true CN101189731B (zh) 2012-10-10

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ID=36809127

Family Applications (1)

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CN2006800194208A Active CN101189731B (zh) 2005-06-01 2006-05-26 像素阵列上的非对称微透镜

Country Status (7)

Country Link
US (1) US7456380B2 (enExample)
EP (1) EP1894253B1 (enExample)
JP (1) JP4884465B2 (enExample)
KR (1) KR101274305B1 (enExample)
CN (1) CN101189731B (enExample)
TW (1) TWI406425B (enExample)
WO (1) WO2006130517A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7456380B2 (en) * 2005-06-01 2008-11-25 Eastman Kodak Company Asymmetrical microlenses on pixel arrays
JP2007208817A (ja) * 2006-02-03 2007-08-16 Toshiba Corp 固体撮像装置
JP5277565B2 (ja) * 2007-05-31 2013-08-28 富士通セミコンダクター株式会社 固体撮像素子
US9153614B2 (en) * 2007-08-15 2015-10-06 Micron Technology, Inc. Method and apparatus for lens alignment for optically sensitive devices and systems implementing same
JP2009289927A (ja) * 2008-05-28 2009-12-10 Panasonic Corp 固体撮像装置及びその製造方法
JP2009302483A (ja) * 2008-06-17 2009-12-24 Panasonic Corp 固体撮像装置及びその製造方法
US9444985B2 (en) 2012-05-03 2016-09-13 Semiconductor Components Industries, Llc Reduced height camera modules
JP6379291B2 (ja) 2014-10-31 2018-08-22 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． ファイルアクセス方法、システム、及びホスト
US9911774B2 (en) * 2015-04-14 2018-03-06 Massachusetts Institute Of Technology Photodiode placement for cross talk suppression
US9936129B2 (en) 2016-06-15 2018-04-03 Obsidian Sensors, Inc. Generating high resolution images
US10015389B2 (en) * 2016-09-22 2018-07-03 Omnivision Technologies, Inc. Image sensor with asymmetric-microlens phase-detection auto-focus (PDAF) detectors, associated PDAF imaging system, and associated method
CN115516283A (zh) 2020-04-24 2022-12-23 元平台技术有限公司 偏振成像摄像头
US20220139990A1 (en) * 2020-11-04 2022-05-05 Facebook Technologies, Llc Polarimetric imaging camera
KR102629588B1 (ko) * 2021-11-02 2024-01-25 삼성전자주식회사 나노 광학 마이크로렌즈 어레이를 구비하는 광학 센서 및 이를 포함하는 전자 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536455A (en) * 1994-01-03 1996-07-16 Omron Corporation Method of manufacturing lens array
EP0867086B1 (de) * 1995-12-06 2002-06-19 Deutsche Telekom AG Bildaufnahmeeinrichtung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6829087B2 (en) * 1998-04-15 2004-12-07 Bright View Technologies, Inc. Micro-lens array based light transmitting screen with tunable gain
AU2001218821A1 (en) 2000-12-14 2002-06-24 3Dv Systems Ltd. 3d camera
US6709796B2 (en) * 2002-06-12 2004-03-23 Eastman Kodak Company Camera speed color film with base side micro-lenses
US7227692B2 (en) * 2003-10-09 2007-06-05 Micron Technology, Inc Method and apparatus for balancing color response of imagers
US7456380B2 (en) * 2005-06-01 2008-11-25 Eastman Kodak Company Asymmetrical microlenses on pixel arrays
TWM289853U (en) * 2005-11-02 2006-04-21 Pixart Imaging Inc Socket for testing image sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536455A (en) * 1994-01-03 1996-07-16 Omron Corporation Method of manufacturing lens array
EP0867086B1 (de) * 1995-12-06 2002-06-19 Deutsche Telekom AG Bildaufnahmeeinrichtung

Also Published As

Publication number Publication date
EP1894253B1 (en) 2011-07-13
WO2006130517A1 (en) 2006-12-07
TW200711156A (en) 2007-03-16
TWI406425B (zh) 2013-08-21
KR101274305B1 (ko) 2013-06-13
KR20080019598A (ko) 2008-03-04
US7456380B2 (en) 2008-11-25
CN101189731A (zh) 2008-05-28
JP2008546200A (ja) 2008-12-18
US20060273239A1 (en) 2006-12-07
JP4884465B2 (ja) 2012-02-29
EP1894253A1 (en) 2008-03-05

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Owner name: FULL VISION TECHNOLOGY CO., LTD.

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Patentee after: OmniVision Technologies, Inc.

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Patentee before: Full Vision Technology Co., Ltd.

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