TWI406425B - 像素陣列上之非對稱微透鏡 - Google Patents

像素陣列上之非對稱微透鏡 Download PDF

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TWI406425B
TWI406425B TW095118203A TW95118203A TWI406425B TW I406425 B TWI406425 B TW I406425B TW 095118203 A TW095118203 A TW 095118203A TW 95118203 A TW95118203 A TW 95118203A TW I406425 B TWI406425 B TW I406425B
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photosensitive
microlenses
stations
asymmetric
image sensor
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TW095118203A
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TW200711156A (en
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Robert D Mcgrath
Ronald W Wake
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Omnivision Tech Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Description

像素陣列上之非對稱微透鏡
本發明大致有關於橫跨一影像感測器的感光站的微透鏡領域，且尤其有關於橫跨感光站的非對稱微透鏡，其以一大體上均一方式捕獲入射光。
參考圖1，影像感測器10一般包括多個像素20，其具有一感光區或光二極體30用以捕獲入射光，及相關電路40，與該感光區相鄰用以處理等。在一些例子中，影像感測器10的像素20非對稱的配置以使像素的性能極大，同時承接該相關電路40。惟，在此例中，四個像素20一般形成一規律格圖案以形成一超格50。參考圖2，一微透鏡60定位成橫跨及部分地居中在像素20的"感光部分"上。參考圖3，或者，數個微透鏡65定位成橫跨及居中在整個"像素"上以產生規律的微透鏡陣列。
雖然圖2所示微透鏡60的習知配置令人滿意，它包括的缺點是微透鏡60是像素區域的一小部分，光二極體30因而捕獲入射光的一小部分。
況且，雖然微透鏡65在非對稱定位像素上的習知配置(如圖3)令人滿意，其也包括一些缺點。參考圖4，只要光二極體30相對於微透鏡60是對稱如在像素中居中，則所有像素的性能都劣化如同入射光的角度減少。如圖5所示，以某些角度通過微透鏡65的光(如虛線所示)不是導入光二極體30上，當光二極體30不配置成與微透鏡對稱時，會導致捕獲影像的不良劣化。
因此，存在一種需要以改善在非對稱定位像素上光的聚焦。
本發明意欲克服上述的一或多個問題。簡言之，根據本發明的一特點，本發明是指一種影像感測器，包括：(a)複數個感光站；及(b)複數個非對稱形狀微透鏡，其定位成橫跨該等感光站；其中入射光藉由該等非對稱形狀微透鏡之一非對稱表面而以一預設方向導入該等感光站上，以一大體上均一方式用以捕獲該光。
由以下較佳實施例的詳細說明及後附申請專利範圍的審閱，且參考附圖，即可更加了解及體會本發明的這些及其它特點，目的，特性及優點。
本發明之優良效應
本發明具有的優點是增加像素陣列的光聚集能力，及去除人為現象，其發生於照明的入射角變化時。它也包括允許更多的設計自由以迅速地使用像素空間的優點。
參考圖6及7，其分別顯示影像感測器70的側視圖及頂視圖，該影像感測器70具有本發明複數個微透鏡80陣列，定位成分別橫跨複數個像素90，各有一感光區或光二極體100。如上所述，像素90是非對稱的配置。惟，將像素群組在一起，以形成一由超格110組成的陣列。應注意的是在圖6及7中為了明晰僅顯示二個超格110a及110b各包括二個像素。為了完整，應注意的是感光區100是沿著矽基板的頂部配置，與習知相同。像素90配置成，以便於設計時其即包括感光區100的非對稱配置。微透鏡130的光表面120是非對稱的形狀。習知微透鏡(60及65)大體上是半球形。由圖6可更明晰看出，本發明的微透鏡130大體上是切除的半球形以允許非對稱的配置。換言之，各微透鏡130包括一沿著一周邊的大體上弓形部分，及包括二個沿著一剩餘邊的大體上直的部分，其定位成大體上互相垂直。為了明晰，應注意的是與習知微透鏡(60及65)相比，本發明的微透鏡130已沿著一或多個邊而修整。這使得微透鏡130的光軸與光二極體100對齊。僅參考圖7，應注意的是在包括超格110的二個像素中，微透鏡130互相緊靠著以便各個個別微透鏡(130a,130b,130c及130d)與超格110的虛擬y軸對稱，但如上所述仍未在任何個別像素90中對稱。換言之，二個像素超格110的各者包括二個非對稱形狀的微透鏡130，其結合成群以橫跨一超格110，及一對直的部分，一來自各微透鏡，定位成以便二個微透鏡形成的一周邊部分是二個弓形邊及二個直邊。
上述像素陣列的功能是令通過微透鏡130的入射光以大體上均一地導入(亦即一致地從一像素至另一像素)在光二極體100上，如實線及虛線所示，即使一光二極體至另一光二極體的間距(即距離)不是常數或是改變的。換言之，在與那一像素在該超格中無關之下，光大體上一致地分布在整個光二極體100上，而大體上直接在上面通過的光則大體上一致地導入光二極體100的一部分上，且呈一角度通過微透鏡130的光則大體上一致地導入光二極體100的多個部分上。
如圖8所示，其顯示超格100配置的替代實施例。在此實施例，有四個像素90呈繞虛擬x及y軸對稱。
參考圖9，其顯示圖9是數位相機140的側視圖，其含有本發明的影像感測器70，以繪示一典型的商用配置。
已參考較佳實施例來說明本發明。惟，將了解的是熟習此項技藝者可以在不違反本發明的範圍下作各種變化及改良。
10,70．．．影像感測器
20．．．像素
30,100．．．感光區或光二極體
40．．．相關電路
50．．．形成超格的規律格圖案
60,65．．．微透鏡
80．．．微透鏡陣列
90．．．複數個像素
110．．．像素的超格
110a,110b．．．超格
120．．．微透鏡的光表面
130,130a,103b,130c,130d．．．微透鏡
140．．．數位相機
圖1是習知像素陣列的頂視圖，其具有非對稱配置的孔；圖2是圖1的頂視圖，其具有在像素陣列的光二極體上橫跨及居中的微透鏡；圖3是圖1的頂視圖，其具有在陣列中的像素上橫跨及居中的微透鏡；圖4是習知像素陣列的側視圖，其具有光二極體及微透鏡的對稱配置；圖5是習知像素陣列的側視圖，其具有對稱的微透鏡及光二極體的非對稱配置；圖6是本發明像素陣列的側視圖，其具有光二極體的非對稱配置及微透鏡的非對稱配置(各微透鏡的光軸與光二極體的中心對齊)；圖7是圖6的頂視圖；圖8是本發明圖6的替代實施例的頂視圖；及圖9是數位相機的側視圖，其含有本發明的影像感測器。
70．．．影像感測器
80．．．微透鏡陣列
90．．．複數個像素
100．．．感光區或光二極體
120．．．微透鏡的光表面
130．．．微透鏡

Claims (7)

  1. 一種影像感測器，包括：(a)複數個像素，各像素包含一感光站，其中該複數個像素包含該等感光站之一非對稱排列，以使得在x方向或y方向上介於多個獨立感光站間之一至少一距離不為固定；及(b)複數個非對稱形狀微透鏡，其非對稱地定位於該等感光站上，以使得各微透鏡之一光軸與一各別的光感站之一中心對齊；其中入射光藉由各微透鏡之一非對稱表面而以一預設方向導入各別的感光站上，以一實質上均一方式用以捕獲光。
  2. 如請求項1之影像感測器，其中該等感光站配置成數群，各群形成一超格其具有一規律格圖案。
  3. 如請求項1之影像感測器，其中該非對稱形狀包括一沿著一周邊之實質上弓形部分，及包括二個沿著一剩餘邊之實質上直的部分，其定位成實質上互相垂直。
  4. 如請求項2之影像感測器，其中該非對稱形狀包括一沿著一周邊之實質上弓形部分，及包括二個沿著一剩餘邊之實質上直的部分，其定位成實質上互相垂直。
  5. 如請求項3之影像感測器，其中四個非對稱形狀微透鏡結合成群以橫跨一超格，及一對直的部分，一來自各微透鏡，定位成互相面對，俾四個微透鏡形成之一周邊部分係四個弓形邊。
  6. 如請求項3之影像感測器，其中二個非對稱形狀微透鏡 結合成群以橫跨一超格，及一對直的部分，一來自各微透鏡，定位成俾二個微透鏡形成之一周邊部分係二個弓形邊及二個直邊。
  7. 一種數位相機，包括：一影像感測器，其包括：(a)複數個像素，各像素包含一感光站，其中該複數個像素包含該等感光站之一非對稱排列，以使得在x方向及y方向上至少介於多個獨立感光站間之至少一距離不為固定；及(b)複數個非對稱形狀微透鏡，其非對稱地定位於該等感光站上，以使得各微透鏡之一光軸與一各別的光感站之一中心對齊；其中入射光藉由該等非對稱形狀微透鏡之一非對稱表面而以一預設方向導入各別的感光站上，以一實質上均一方式用以捕獲該光。
TW095118203A 2005-06-01 2006-05-23 像素陣列上之非對稱微透鏡 TWI406425B (zh)

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US11/253,915 US7456380B2 (en) 2005-06-01 2005-10-18 Asymmetrical microlenses on pixel arrays

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WO2006130517A1 (en) 2006-12-07
CN101189731B (zh) 2012-10-10
TW200711156A (en) 2007-03-16
KR101274305B1 (ko) 2013-06-13
US7456380B2 (en) 2008-11-25
JP4884465B2 (ja) 2012-02-29
JP2008546200A (ja) 2008-12-18
EP1894253A1 (en) 2008-03-05
KR20080019598A (ko) 2008-03-04
EP1894253B1 (en) 2011-07-13
CN101189731A (zh) 2008-05-28

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