TWI406352B - Wafer support substrate and method therefor - Google Patents

Abstract

A wafer support substrate includes a first surface and a second surface disposed opposite to each other, at least one cavity formed on the first surface, and at least one through-hole formed on a bottom surface defining the cavity. The through hole penetrates the bottom surface and the second surface. The support substrate can be applied in a 3D package, inductively coupled plasma reactive ion etch, or a wafer thinning process. The invention further includes a manufacture method for supporting a substrate.

Description

Wafer carrier substrate and method of manufacturing same

The present disclosure relates to a wafer carrier substrate.

With the rapid miniaturization of electronic products, the density of integrated circuits and printed circuit boards has been promoted, which has driven the continuous development of three-dimensional packaging technology. When using the three-dimensional packaging technology, in order to control the height of the die stack, it is inevitable to further thinen the processed wafer. However, the further thinned wafers are more fragile, and the technology used for wafer thinning is unsustainable. Therefore, some of the technologies have been developed, and one of them is a wafer using a glass wafer as a carrier. Thinning technology.

Thinning after bonding the finished wafer to a glass wafer is a method commonly used today to avoid thinning the wafer. After the wafer is thinned, the thinned wafer is peeled off from the glass wafer, and the chemical solution is used to remove the adhesive between the wafer and the glass wafer. The chemical solution dissolves the adhesive gradually from the edge of the wafer toward the inside of the wafer until the thinned wafer is peeled off from the glass wafer. However, this method of dissolving the adhesive takes time and effort and is inefficient.

Further, in the above method of using a glass wafer as a carrier for thinning a wafer, an adhesive is required to fix the wafer on a glass wafer. In general, because the adhesive is not resistant to high temperatures, the wafer adhered to the glass wafer cannot be subjected to a semiconductor process requiring a higher temperature, thereby reducing the process selectivity.

In view of the lack of the foregoing methods, it is necessary to develop a carrier tool for carrying wafers in a thin wafer process.

One embodiment of the present disclosure discloses a wafer carrier substrate including a first surface and a second surface, at least one groove, and at least a uniform through hole. The groove is formed on the first surface, wherein the groove defines a bottom surface. The through hole is disposed on a bottom surface of the groove. The through hole extends through the bottom surface of the groove to the second surface.

An embodiment of the present invention discloses a method for fabricating a wafer carrier substrate, comprising the steps of: providing a substrate; forming a first patterned mask layer and a second patterned mask on opposite surfaces of the substrate; Cover layer. The first patterned mask layer includes at least one first opening, and the second patterned mask layer includes at least one opening area, wherein the first opening is opposite to the opening area. Etching the substrate to form a recess at the first opening and forming a uniform via at the second opening; and removing the first patterned mask layer and the second patterned mask layer.

The technical features and advantages of the present disclosure are summarized above, and the detailed description of the present disclosure will be better understood. Other technical features and advantages of the subject matter of the claims of the present disclosure will be described below. It is to be understood by those of ordinary skill in the art that the present invention disclosed herein may be It is also to be understood by those of ordinary skill in the art that this invention is not limited to the spirit and scope of the disclosure disclosed in the appended claims.

1 is a front elevational view of a wafer carrier substrate 1 in accordance with an embodiment of the present invention. 2 is a schematic rear view of the wafer carrier substrate 1 according to an embodiment of the present disclosure. Referring to FIG. 1 and FIG. 2 , the wafer carrier substrate 1 of the embodiment includes a first surface 11 , at least one groove 12 , and at least a uniform through hole 131 . In this embodiment, a plurality of grooves 12 are formed on a substrate 1. The groove 12 is formed on the first surface 11 of the carrier substrate 1. The recess 12 includes a bottom surface 121. The through hole 131 is disposed on the bottom surface 121 of the groove 12 . In this embodiment, the four through holes 131 constitute a plurality of through hole groups 13, that is, the substrate 1 of the embodiment has a plurality of grooves 12, and the ground 121 of each groove 12 has a consistent perforation group 13, and each consistently Each of the perforated groups 13 can include at least one or four through-holes 131, which are exemplary and are not intended to limit the spirit of the invention.

For example, the carrier substrate 1 may be a germanium substrate, a glass substrate, a ceramic substrate, or the like, but the disclosure is not limited thereto.

In one embodiment, the plurality of grooves 12 may be arranged in parallel in at least one direction such that a plurality of linear land regions 14 are defined in the respective directions on the first surface 11 of the carrier substrate 1.

In one embodiment, a plurality of grooves 12 are formed on the first surface 11 to enhance the release effect, and the ratio of the total opening area to the first surface 11 may be greater than 0.5.

In an embodiment, a plurality of grooves 12 may be arranged at a pitch on the first surface 11 of the carrier substrate 1. The size of the pitch can be adjusted depending on the actual bonding strength required in the subsequent process depending on the wafer adhered to the carrier substrate 1. For example, the spacing can be between 100 and 550 microns.

In an embodiment, as shown in FIGS. 1 and 2, at least the perforated 131 The first surface 11 and the second surface 15 are disposed opposite to each other between the bottom surface 121 of the corresponding groove 12 and the second surface 15. Moreover, at least the ratio of the opening area of the perforated 131 on the second surface 15 to the opening area of the corresponding groove 12 on the first surface 11 is ≦0.9.

In this embodiment, the plurality of grooves 12 are arranged in parallel X and Y directions, and the openings of the grooves 12 are in the shape of a quadrangle extending in the parallel X and Y directions, so that the first surface 11 of the carrier substrate 1 can be It is defined as a linear joint region 14 having a plurality of crisscross lines. The width of the linear joint region 14 or the distance between adjacent grooves 12 can be set according to actual needs. By way of example, the linear junction region 14 can have a width between 100 and 550 microns. The plurality of cross-hatched linear joint regions 14 can be adjusted in width to achieve the desired joint strength, and such a layout also has the advantage of being easy and quick to peel.

Referring to FIGS. 1 and 2, in the present embodiment, each of the through hole groups 13 may include a plurality of through holes 131. A plurality of through holes 131 are formed in the bottom surface 121 of the corresponding groove 12, and as shown in FIG. 2, penetrate the carrier substrate 1.

In the embodiment of the present invention, the carrier substrate 1 may be a germanium wafer. The processed wafer may be attached to the first surface 11 of the carrier substrate 1 by using a polymer material, wherein the polymer material may include a photoresist or a glue. When the wafer is to be peeled off from the carrier substrate 1, a chemical solvent for dissolving the polymer material may be applied to the second surface 15 opposite to the first surface 11 of the carrier substrate 1. The chemical solvent enters the recess 12 through the through hole 131, and dissolves the polymer material bonded to the carrier substrate 1 by bonding. Since the groove 12 has a large volume, the groove 12 can accommodate a relatively large amount of chemical solvent, so that when the polymer material is dissolved, it is not easy to reduce the dissolution rate due to consumption. Also, due to the carrier substrate 1 The plurality of grooves 12 are formed on the first surface 11 instead of the plurality of through holes, so that even if the groove 12 having a large volume is formed, the carrier substrate 1 can maintain a relatively complete structure, that is, it still has a certain The structural strength can withstand subsequent processes, such as thinning processes, the forces applied to it without causing damage to the wafers that adhere to it.

In one embodiment, the wafer is bonded to the carrier substrate 1 in an anodic bonding manner, and the wafer is bonded to the carrier substrate 1 to form a wafer, which can be processed at a high temperature.

Referring to FIG. 3 and FIG. 4, the recess 12a is formed on the first surface 11 of the carrier substrate 1, wherein the recess 12a includes a first side 122a on opposite sides, a second side 123a on opposite sides, and a bottom surface 121a. The side ends of the bottom surface 121a are connected to one side end of the first side surface 122a and the second side surface 123a, respectively. The first side surface 122a and the second side surface 123a can be an inclined surface. As shown in Fig. 4, the first side surface 122a and the second side surface 123a are inclined inwardly from the outside of the recess 12a. This embodiment assumes that a consistent perforation group 13a can be formed on the bottom surface 121a, wherein the through hole group 13a includes a uniform perforation 131a. When the bonded carrier substrate 1 is to be peeled off from the finished wafer, the chemical solvent can enter the inside of the recess 12a from the outside through the through hole 131a to dissolve the polymer material surrounding the recess 12a. The cross-sectional area of the through hole 131a may be smaller than the area of the bottom surface 121a of the recess 12a. In an embodiment, the area ratio of the bottom surface 121a of the recess 12a to the opening of the corresponding through hole 131a on the bottom surface 121a may be 26 :1. Referring to FIG. 4, the through hole 131a defines a plurality of sides 1311a, wherein the side surface 1311a may be an annular side. The side surface 1311a is flared or inclined outward from the bottom surface 121a of the recess 12a, and has a bell mouth shape.

In particular, the inclined first side 122a, the second side 123a, and the side 1311a can be formed by selective etching. Selective etching is an anisotropic etching technique that is selective for lattice masks. For example, the carrier substrate 1 may be a tantalum substrate, and the inclined first side surface 122a, the second side surface 123a, and the side surface 1311a may be formed using EDP (ethylenediamine pyrocatechol), KOH (potassium hydroxide) or TMAH (tetramethyl ammonium hydroxide). By way of example, KOH has a slower etch rate for the high bound density crystal plane {111} than the crystal faces {100} and {110}, so that the slanted surface can be etched.

In addition, the first side surface 122a, the second side surface 123a, and the bottom surface 121a of the groove 12a may be hydrophilic, that is, the contact angle of the surface with water is less than 90 degrees, so that the chemical solvent can easily fill the entire groove 12a.

Referring to FIGS. 5 and 6, the recess 12b is formed on the first surface 11 of the carrier substrate 1, wherein the recess 12b includes a first side 122a on opposite sides, a second side 123a and a bottom surface 121b on opposite sides. The side ends of the bottom surface 121b are respectively connected to one side end of the first side surface 122a and the second side surface 123a. The first side surface 122a and the second side surface 123a can be an inclined surface. As shown in Fig. 4, the first side surface 122a and the second side surface 123a are inclined inwardly from the outside of the recess 12a. The bottom surface 121b of the recess 12b of this embodiment is provided with at least a consistent perforation group 13b. The through hole group 13b includes a plurality of through holes 131a that allow a chemical solvent to enter the inside of the groove 12b from the outside, and dissolve the polymer material in the vicinity of the groove 12b. As shown in FIG. 6, the through hole 131a has a plurality of sides 1311a, wherein the side surface 1311a can be an annular side. The side surface 1311a is flared or inclined outward from the bottom surface 121b of the recess 12b, and has a bell mouth shape. .

In particular, the bottom surface 121b of the recess 12b can be a quadrilateral, and the plurality of through holes 131a can be respectively disposed adjacent to opposite sides of the bottom surface 121b, that is, the bottom surface 121b is adjacent to the first side surface 122a and the second side surface 123a. Within a rectangular right angle, the chemical solvent enters the air in the recess 12b and the recess 12b. In the present embodiment, the four through holes 131a are respectively arranged in the unit of the two through holes 131a, adjacent to the edge of the boundary between the opposite second side surface 123a and the bottom surface 121b. The cross-sectional area of the through hole 131a may be smaller than the area of the bottom surface 121b of the recess 12b. In an embodiment, the area ratio of the bottom surface 121b of the recess 12b to the opening of the corresponding through hole 131a on the bottom surface 121b may be 26: 1.

Further, the inclined first side surface 122a, second side surface 123a, and side surface 1311a can be formed by the selective etching described above. Further, the first side surface 122a, the second side surface 123a, and the bottom surface 121b of the recess 12b may be hydrophilic.

Referring to FIGS. 7 and 8, the recess 12c is formed on the first surface 11 of the carrier substrate 1, wherein the recess 12c includes a first side 122b on opposite sides, a second side 123b on opposite sides, and a bottom surface 121b. The first side surface 122b and the second side surface 123b are perpendicular to each other. A uniform perforation group 13c can be formed on the bottom surface 121b of the recess 12c. The through hole group 13c includes a plurality of through holes 131b which allow the chemical solvent to enter the groove 12c from the outside to dissolve the polymer material in the vicinity of the groove 12c. As shown in FIG. 8, the through hole 131b can be defined by a plurality of sides 1311b, wherein the side surface 1311b can also be a substantially upright surface. The through hole 131b may be an annular side surface 1311b or a polygonal side surface.

In particular, the substantial erect surface consists of an upright surface and an inclined surface that is slightly inclined but close to the upright. In the embodiment of the present case, the two are relatively erect The first side 122b, the substantially upright opposing second side 123b, and the side 1311b can be formed using an anisotropic etching technique, wherein the anisotropic etching technique includes a dry etching technique.

Moreover, the cross-sectional area of the through hole 131b may be smaller than the area of the bottom surface 121b of the recess 12c. In an embodiment, the area ratio of the bottom surface 121b of the recess 12c to the opening of the corresponding through hole 131b on the bottom surface 121b may be 26:1.

In this embodiment, the bottom surface 121b of the recess 12c may be a quadrilateral shape, and a plurality of through holes 131b may be respectively disposed adjacent to opposite sides of the bottom surface 121b to facilitate the discharge of chemical solvent into the air in the recess 12c and the recess 12c. In addition, the opposite first side faces 122b, the opposite second side faces 123b, and the bottom face 121b of the recess 12c may be hydrophilic.

Referring to FIG. 9 and FIG. 10, a recess 12d is formed on the first surface 11 of the carrier substrate 1, wherein the recess 12d includes opposite sides and an inclined first side 122a, opposite sides and a sloped second side 123a and A bottom surface 121c. A uniform perforation group 13d can be formed on the bottom surface 121c of the recess 12d. The through hole group 13d includes a plurality of through holes 131a that allow chemical solvent to enter the inside of the groove 12d from the outside to dissolve the polymer material in the vicinity of the groove 12d. As shown in FIG. 10, the first side surface 122a and the second side surface 123a are inclined inwardly from the outer side of the recess 12d. The through hole 131a has a plurality of sides 1311a, wherein the side surface 1311a can be an annular side. The side surface 1311a is flared or inclined outward from the bottom surface 121c of the recess 12d, and has a bell mouth shape. The side surface 1311a may be a slope facing away from the corresponding groove 12d. The through hole 131a may have a smaller cross section than the bottom surface 121c of the recess 12d. In one embodiment, the bottom surface 121c of the recess 12d and the corresponding through hole 131a are located on the bottom surface 121c. The area ratio can be 26:1.

Referring to FIG. 9, the bottom surface 121c of the recess 12d may be a quadrilateral, and a plurality of through holes 131a may be respectively disposed adjacent to opposite sides of the bottom surface 121b to facilitate the passage of chemical solvent into the air in the recess 12d and the recess 12d. . Further, the inclined first side surface 122a, second side surface 123a, and side surface 1311a can be formed by the selective etching described above. Moreover, the opposite first side faces 122a and the opposite second side faces 123a and 121c of the recess 12d may be hydrophilic.

Referring to FIGS. 11 and 12, a recess 12e is formed on the first surface 11 of the carrier substrate 1, wherein the recess 12e includes a first side 122b on opposite sides, a second side 123b on opposite sides, and a bottom surface 121c. The first side surface 122b and the second side surface 123b are perpendicular to each other. A uniform perforation group 13e can be formed on the bottom surface 121c of the recess 12e. The through hole group 13e includes a plurality of through holes 131b which allow a chemical solvent to enter the inside of the groove 12e from the outside, and dissolve the polymer material in the vicinity of the groove 12e. The cross-sectional area of the through hole 131b may be smaller than the area of the bottom surface 121c of the recess 12e. In an embodiment, the area ratio of the bottom surface 121c of the recess 12e to the opening of the corresponding through hole 131b on the bottom surface 121c may be 26: 1.

As shown in FIG. 12, the through hole 131b has a plurality of side faces 1311b, wherein the side faces 1311b may be upright faces. Moreover, the first side 122b, the second side 123b, and the side 1311b may be formed using an anisotropic etching technique, wherein the anisotropic etching technique includes a dry etching technique.

The bottom surface 121c of the recess 12e may be a quadrilateral, and a plurality of through holes 131b may be respectively disposed adjacent to opposite sides of the bottom surface 121c to facilitate the discharge of chemical solvent into the air in the recess 12e and the recess 12e. In addition, the opposite of the groove 12e The first side surface 122b, the opposite second side surfaces 123b, and the bottom surface 121c may be hydrophilic.

Referring to FIG. 13 and FIG. 14, a recess 12f is formed on the first surface 11 of the carrier substrate 1, wherein the recess 12f includes opposite sides 1 and an inclined first side 122a, opposite sides and a sloped second side 123a and A bottom surface 121d. A uniform perforation group 13f can be formed on the bottom surface 121d of the recess 12f. The through hole group 13f includes a plurality of through holes 131a that allow chemical solvent to enter the groove 12f from the outside to dissolve the polymer material in the vicinity of the groove 12f. The cross-sectional area of the through hole 131a may be smaller than the area of the bottom surface 121d of the groove 12f. In an embodiment, the area ratio of the bottom surface 121d of the groove 12f to the opening of the corresponding through hole 131a on the bottom surface 121d may be 26: 1.

As shown in FIG. 14, the through hole 131a has a plurality of side faces 1311a, wherein the side faces 1311a may be annular or polygonal. As shown in Fig. 13, a plurality of through holes 131a may be arranged in one direction. Further, the inclined first side surface 122a, second side surface 123a, and side surface 1311a can be formed by the selective etching described above. Moreover, the opposite first side faces 122a and the opposite second side faces 123a and 121d of the recess 12f may be hydrophilic.

Referring to FIGS. 15 and 16, a recess 12g is formed on the first surface 11 of the carrier substrate 1, wherein the recess 12g includes a first side 122b on opposite sides, a second side 123b on opposite sides, and a bottom surface 121d. The first side surface 122b and the second side surface 123b are perpendicular to each other. A uniform perforation group 13g can be formed on the bottom surface 121d of the recess 12g. The through hole group 13g includes a plurality of through holes 131b that allow chemical solvent to enter the inside of the groove 12g from the outside to dissolve the polymer material in the vicinity of the groove 12g. The cross-sectional area of the through hole 131b may be smaller than the concave The area of the bottom surface 121d of the groove 12g, and in one embodiment, the area ratio of the bottom surface 121d of the groove 12g to the opening of the corresponding through hole 131b on the bottom surface 121d may be 26:1.

As shown in FIG. 16, the through hole 131b has a plurality of side faces 1311b, wherein the side faces 1311b may also be upright faces. As shown in Fig. 15, a plurality of through holes 131b may be arranged in one direction. In addition, the first side 122b, the second side 123b, and the side 1311b may be formed using an isotropic etching technique, wherein the isotropic etching technique includes a dry etching technique. Moreover, the opposite first side faces 122b, the opposite second side faces 123b, and the bottom face 121d of the recess 12g may be hydrophilic.

The wafer can be attached to the first surface 11 of the carrier substrate 1. When the substrate 1 needs to provide a large bonding strength, the wafer can also be attached to the second surface 15 of the carrier substrate 1. The aforementioned grooves 12, 12a, 12b and 12c are exposed. Since the grooves 12, 12a, 12b and 12c are formed on the first surface 11 of the carrier substrate 1, the thickness of the carrier substrate 1 can be reduced at the formation of the grooves 12, 12a, 12b and 12c, and the chemical solvent dissolution bonding crystal can be reduced. The path through which the polymer material is rounded, thereby speeding up its dissolution.

Referring to FIG. 1 and FIG. 17, the carrier substrate 1 may further include a pair of alignment marks 16, which may be disposed on the first surface 11 of the carrier substrate 1, and the alignment mark 16 is constructed to form a post wafer. It is bonded to the carrier substrate 1 and aligned by, for example, optical means.

The present disclosure further discloses a method of manufacturing the carrier substrate 1. As shown in FIG. 18, the manufacturing method of the carrier substrate 1 first provides a substrate 17, wherein the material of the substrate 17 may be glass, ceramic or tantalum or the like. Then, on the opposite surfaces of the substrate 17, a first mask layer 18a and a second mask layer 19a are formed. The material of the first mask layer 18a and the second mask layer 19a may be metal, cerium oxide or tantalum nitride. As shown in FIG. 19, a first patterned photoresist layer 20 is formed on the first mask layer 18a, and a second patterned photoresist layer 21 is formed on the second mask layer 19a. Then, the first mask layer 18a and the second mask layer 19a are etched to obtain a first patterned mask layer 18b and a second patterned mask layer 19b, wherein the first patterned mask layer 18b includes a plurality of first openings 181, and the second patterned mask layer 19b includes a plurality of open regions 191. The opening areas 191 can be disposed opposite to the first openings 181 , and each of the opening areas 191 can include at least one second opening 192 . As shown in FIG. 20, the substrate 17 is etched to form a recess 12 at the first opening 181, and a permanent through hole 131 is formed at each of the at least one second opening 192. As shown in FIG. 21, the first patterned mask layer 18b and the second patterned mask layer 19b are finally removed, and the carrier substrate 1 is obtained.

As shown in FIG. 22, the carrier substrate 2 of another embodiment of the present disclosure includes a first surface 21, a plurality of grooves 22, and a plurality of through-hole groups 23. A plurality of grooves 22 are formed on the first surface 21 of the carrier substrate 2. The plurality of through hole groups 23 are disposed corresponding to the plurality of grooves 22. Each of the plurality of through-hole sets 23 can include at least a consistent perforation 231, wherein the at least consistent perforations 231 are formed on the bottom surface 221 of the respective recess 22. The plurality of grooves 22 are radially arranged with respect to a center on the carrier substrate 2 to form a plurality of radial junction regions and an annular junction region surrounding the center. Further, in the present embodiment, the shape of the bottom surface 221 of the recess 22 may be a closed curve. In other embodiments, the bottom surface 221 of the recess 22 may be polygonal or circular in shape. As shown in Fig. 22, it is a circular groove, and as shown in Figs. 1 to 16, it is a rectangular groove, which is not the spirit of the present invention. Limited.

In summary, the present disclosure discloses a carrier substrate and a method of fabricating the same. The carrier substrate can be used for various wafer thinning, 3D packaging or inductively coupled plasma ion etching processes. . A plurality of grooves may be formed on one surface of the carrier substrate, and the grooves may be fabricated by semiconductor etching. The bottom surface defining each of the grooves also includes at least a uniform perforation formed by semiconductor etching. A chemical solvent can pass through the through holes to dissolve the adhesive material. Since the carrier substrate has a groove, it can have the advantage of rapid peeling. The carrier substrate can be simply separated and reused from the thinned wafer after the wafer thinning process, and the temporary carrier substrate can be matched with various semiconductor processes to increase the process selectivity. The use of the carrier substrate has the advantages of reduced process cost, increased process selectivity, diversified bonding methods, and reduced process difficulty.

The technical content and technical features of the present disclosure have been disclosed as above, and those skilled in the art can still make various substitutions and modifications without departing from the spirit and scope of the disclosure. Therefore, the scope of the present disclosure is not to be construed as being limited by the scope of

1, 2‧‧‧ carrying substrate

11, 21‧‧‧ first surface

12, 12a, 12b, 12c, 22‧‧‧ grooves

12d, 12e, 12f, 12g‧‧‧ grooves

13, 13a, 13b, 13c‧‧‧through hole group

13d, 13e, 13f, 13g, 23‧‧‧through hole groups

14‧‧‧Lineted joint area

15‧‧‧ second surface

16‧‧‧ alignment mark

17‧‧‧Substrate

18a‧‧‧First mask layer

19a‧‧‧Second mask

18b‧‧‧First patterned mask layer

19b‧‧‧Second patterned mask layer

20, 21‧‧‧ photoresist layer

121, 121a, 121b, 121c, 121d, 221‧‧‧ bottom

122a, 122b‧‧‧ first side

123a, 123b‧‧‧ second side

131, 131a, 131b, 231‧‧‧ through holes

181‧‧‧ first opening

191‧‧‧Opening area

192‧‧‧Second opening

1311a‧‧‧ side

1311b‧‧‧ side

1 is a front view of a carrier substrate according to an embodiment of the present invention; FIG. 2 is a schematic side view of a carrier substrate according to an embodiment of the present disclosure; FIG. 3 is a schematic view of a groove of the first embodiment; FIG. Figure 5 is a cross-sectional view of the second embodiment of the present invention; Figure 5 is a cross-sectional view taken along line 6-6 of Figure 5; 7 is a schematic view of a groove according to a third embodiment of the present invention; FIG. 8 is a cross-sectional view taken along line 8-8 of FIG. 7; FIG. 9 is a schematic view of a groove of the fourth embodiment; FIG. Figure 10 is a cross-sectional view of the fifth embodiment of the present invention; Figure 12 is a cross-sectional view taken along line 22-22 of Figure 11; Figure 13 is a schematic view of the groove of the sixth embodiment of the present disclosure Figure 14 is a cross-sectional view taken along line 23-23 of Figure 13; Figure 15 is a schematic view of the groove of the seventh embodiment; Figure 16 is a cross-sectional view taken along line 24-24 of Figure 15; A schematic diagram of a method for manufacturing a carrier substrate according to an embodiment of the present invention; and FIG. 22 is a schematic front view of a carrier substrate according to another embodiment of the present disclosure.

1. . . Carrier substrate

11. . . surface

12. . . Groove

13. . . Through hole group

14. . . Linear joint area

16. . . Alignment mark

121. . . Bottom

131. . . Through hole

Claims (15)

A wafer carrier substrate comprising: a first surface and a second surface disposed oppositely; at least one groove formed on the first surface, the groove having a bottom surface; and at least a uniform perforation disposed in the groove On the bottom surface, the through hole penetrates from the bottom surface of the groove to the second surface. The wafer carrier substrate of claim 1, wherein the at least one groove comprises a plurality of grooves that are aligned in at least one direction. The wafer carrier substrate of claim 1, wherein a ratio of a total opening area of the groove on the first surface to the first surface is greater than 0.5. The wafer carrier substrate according to claim 1, wherein an opening area of the through hole on the second surface and an opening area ratio of the corresponding groove on the first surface are ≦0.9. The wafer carrier substrate of claim 1, wherein the at least one of the perforations comprises a plurality of through holes. The wafer carrier substrate of claim 5, wherein the bottom surface of the groove is a polygonal or closed curve. The wafer carrier substrate according to claim 5, wherein an opening area of the through hole on the second surface and an opening area ratio of the corresponding groove on the first surface are ≦0.9. The wafer carrier substrate of claim 1 or 5, wherein the groove has a plurality of sides, wherein the sides are outwardly inclined or upright. The wafer carrier substrate of claim 8, wherein the bottom surface of the groove and the side surface are hydrophilic. The wafer carrier substrate of claim 8, wherein the through hole has a plurality of sides, wherein a side of the through hole is inclined. A method for manufacturing a wafer carrier substrate, comprising the steps of: providing a substrate; forming a first patterned mask layer and a second patterned mask layer on opposite surfaces of the substrate, the first pattern The mask layer includes a plurality of first openings, and the second patterned mask layer includes a plurality of opening regions, each of the opening regions including at least one second opening, wherein the first openings and the plurality of openings The opening area is oppositely disposed, and the at least one second opening is smaller than the corresponding first opening; etching the substrate to form a groove at each of the first openings, and at least one second Forming a uniform perforation at the opening; and removing the first patterned mask layer and the second patterned mask layer. The method of fabricating a wafer carrier substrate according to claim 11, wherein the substrate is a substrate, and the step of etching the substrate comprises selectively etching the substrate. The method of manufacturing a wafer carrier substrate according to claim 11, wherein the step of etching the substrate is performed by a dry etching process. The method of manufacturing a wafer carrier substrate according to claim 11, further comprising the step of performing hydrophilic treatment on the grooves. The method of manufacturing a wafer carrier substrate according to claim 11, wherein the substrate is a glass substrate or a ceramic substrate.