TWI406228B - Pixel structure and pixel structure of organic emitting device - Google Patents
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
Description
本發明是有關於一種畫素結構，且特別是有關於一種有機發光元件的畫素結構。The present invention relates to a pixel structure, and more particularly to a pixel structure of an organic light-emitting element.
有機發光元件是一種自發光性之發光元件。由於使用有機發光元件之顯示器具有無視角限制、低製造成本、高反應速度(約為液晶的百倍以上)、省電、可使用於可攜式機器、工作溫度範圍大以及重量輕且可隨硬體設備小型化及薄型化等等。因此，使用有機發光元件之顯器具有極大的發展潛力，可望成為下一世代的新穎平面顯示器。The organic light emitting element is a self-luminous light emitting element. Since the display using the organic light-emitting element has no viewing angle limitation, low manufacturing cost, high reaction speed (about 100 times of liquid crystal), power saving, can be used for portable machines, large operating temperature range, and light weight and can be used with hard Miniaturization and thinning of body equipment, etc. Therefore, the display device using the organic light-emitting element has great development potential and is expected to become a novel flat display of the next generation.
通常有機發光元件之顯示器的一個畫素結構可由多個薄膜電晶體以及一個電容器之搭配來驅動此畫素結構。然而，因畫素電路結構中使用多個薄膜電晶體，所述多個薄膜電晶體勢必佔據此畫素結構特定的面積。如此一來，畫素電路結構中就沒有多餘的空間可以再設置其他構件。或者是，所述畫素電路結構就不易縮小化，而難以應用於高解析度的顯示器上。Generally, a pixel structure of a display of an organic light-emitting element can be driven by a plurality of thin film transistors and a capacitor to drive the pixel structure. However, since a plurality of thin film transistors are used in the pixel circuit structure, the plurality of thin film transistors tend to occupy a specific area of the pixel structure. In this way, there is no extra space in the pixel circuit structure to set other components. Alternatively, the pixel circuit structure is not easily reduced in size, and is difficult to apply to a high-resolution display.
本發明提供一種畫素結構以及有機發光元件的畫素結構，其可以節省畫素結構之構件所需佔用的面積。The present invention provides a pixel structure and a pixel structure of an organic light-emitting element, which can save an area required for a member of a pixel structure.
本發明提出一種有機發光元件的畫素結構，其包括第一掃描線以及第二掃描線、約略垂直第一掃描線以及第二掃描線設置的資料線與電源線、約略平行第一掃描線以及第二掃描線設置的發光訊號線與參考訊號線、共用電晶體以及第一畫素單元以及第二畫素單元。共用電晶體具有共用閘極、共用源極與共用汲極，且共用閘極與第一掃描線電性連接，共用汲極與參考訊號線電性連接。第一畫素單元以及第二畫素單元各自具有第一、第二、第三、第四、第五、第六薄膜電晶體、電容器以及發光元件。第一薄膜電晶體具有第一閘極、第一源極與第一汲極，第一閘極與第一掃描線電性連接，第一汲極與共用電晶體的共用源極電性連接。第二薄膜電晶體具有第二閘極、第二源極與第二汲極，第二閘極與發光訊號線電性連接。電容器具有第一電容電極與第二電容電極，第一電容電極與第一薄膜電晶體的第一源極電性連接，第二電容電極與第二薄膜電晶體的第二汲極電性連接。第三薄膜電晶體具有第三閘極、第三源極與第三汲極，第三閘極與第二掃描線電性連接，第三汲極與第一薄膜電晶體的第一源極電性連接。第四薄膜電晶體具有第四閘極、第四源極與第四汲極，第四閘極與第一薄膜電晶體的第一源極以及第三薄膜電晶體的第三汲極電性連接，第四源極與第二薄膜電晶體的第二源極電性連接。第五薄膜電晶體具有第五閘極、第五源極與第五汲極，第五閘極與發光訊號線電性連接，第五源極與第四薄膜電晶體的第四汲極以及第三薄膜電晶體的第三源極電性連接。第六薄膜電晶體具有第六閘極、第六源極與第六汲極，第六閘極與第二掃描線電性連接，第六源極與資料線電性連接，第六汲極與第二薄膜電晶體的第二源極以及第四薄膜電晶體的第四源極電性連接。發光元件與第五薄膜電晶體的汲極電性連接。The present invention provides a pixel structure of an organic light emitting device, including a first scan line and a second scan line, a data line and a power line disposed approximately perpendicular to the first scan line and the second scan line, approximately parallel to the first scan line, and The illuminating signal line and the reference signal line disposed on the second scan line, the common transistor, and the first pixel unit and the second pixel unit. The common transistor has a common gate, a common source and a common drain, and the common gate is electrically connected to the first scan line, and the common drain is electrically connected to the reference signal line. The first pixel unit and the second pixel unit each have first, second, third, fourth, fifth, and sixth thin film transistors, a capacitor, and a light emitting element. The first thin film transistor has a first gate, a first source and a first drain. The first gate is electrically connected to the first scan line, and the first drain is electrically connected to the common source of the common transistor. The second thin film transistor has a second gate, a second source and a second drain, and the second gate is electrically connected to the illuminating signal line. The capacitor has a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is electrically connected to the first source of the first thin film transistor, and the second capacitor electrode is electrically connected to the second drain of the second thin film transistor. The third thin film transistor has a third gate, a third source and a third drain, the third gate is electrically connected to the second scan line, and the third drain is electrically connected to the first source of the first thin film transistor. Sexual connection. The fourth thin film transistor has a fourth gate, a fourth source and a fourth drain, and the fourth gate is electrically connected to the first source of the first thin film transistor and the third drain of the third thin film transistor The fourth source is electrically connected to the second source of the second thin film transistor. The fifth thin film transistor has a fifth gate, a fifth source and a fifth drain, the fifth gate is electrically connected to the illuminating signal line, the fourth source of the fifth source and the fourth thin film transistor, and the fourth The third source of the three thin film transistors is electrically connected. The sixth thin film transistor has a sixth gate, a sixth source and a sixth drain, the sixth gate is electrically connected to the second scan line, the sixth source is electrically connected to the data line, and the sixth drain is The second source of the second thin film transistor and the fourth source of the fourth thin film transistor are electrically connected. The light emitting element is electrically connected to the drain of the fifth thin film transistor.
本發明提出一種畫素結構，其包括第一掃描線以及第二掃描線、約略垂直第一掃描線以及第二掃描線設置的資料線與電源線、約略平行第一掃描線以及第二掃描線設置的發光訊號線與參考訊號線、共用電晶體以及第一畫素單元以及第二畫素單元。共用電晶體具有共用閘極、共用源極與共用汲極，且共用閘極與第一掃描線電性連接，共用汲極與參考訊號線電性連接。第一畫素單元以及第二畫素單元各自具有第一、第二、第三、第四、第五、第六薄膜電晶體以及電容器。第一薄膜電晶體具有第一閘極、第一源極與第一汲極，第一閘極與第一掃描線電性連接，第一汲極與共用電晶體的共用源極電性連接。第二薄膜電晶體具有第二閘極、第二源極與第二汲極，第二閘極與發光訊號線電性連接。電容器具有第一電容電極與第二電容電極，第一電容電極與第一薄膜電晶體的第一源極電性連接，第二電容電極與第二薄膜電晶體的第二汲極電性連接。第三薄膜電晶體具有第三閘極、第三源極與第三汲極，第三閘極與第二掃描線電性連接，第三汲極與第一薄膜電晶體的第一源極電性連接。第四薄膜電晶體具有第四閘極、第四源極與第四汲極，第四閘極與第一薄膜電晶體的第一源極以及第三薄膜電晶體的第三汲極電性連接，第四源極與第二薄膜電晶體的第二源極電性連接。第五薄膜電晶體具有第五閘極、第五源極與第五汲極，第五閘極與發光訊號線電性連接，第五源極與第四薄膜電晶體的第四汲極以及第三薄膜電晶體的第三源極電性連接。第六薄膜電晶體具有第六閘極、第六源極與第六汲極，第六閘極與第二掃描線電性連接，第六源極與資料線電性連接，第六汲極與第二薄膜電晶體的第二源極以及第四薄膜電晶體的第四源極電性連接。The present invention provides a pixel structure including a first scan line and a second scan line, a data line and a power line disposed approximately perpendicular to the first scan line and the second scan line, approximately parallel to the first scan line, and a second scan line The illuminating signal line and the reference signal line, the common transistor, and the first pixel unit and the second pixel unit are disposed. The common transistor has a common gate, a common source and a common drain, and the common gate is electrically connected to the first scan line, and the common drain is electrically connected to the reference signal line. The first pixel unit and the second pixel unit each have first, second, third, fourth, fifth, sixth thin film transistors and a capacitor. The first thin film transistor has a first gate, a first source and a first drain. The first gate is electrically connected to the first scan line, and the first drain is electrically connected to the common source of the common transistor. The second thin film transistor has a second gate, a second source and a second drain, and the second gate is electrically connected to the illuminating signal line. The capacitor has a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is electrically connected to the first source of the first thin film transistor, and the second capacitor electrode is electrically connected to the second drain of the second thin film transistor. The third thin film transistor has a third gate, a third source and a third drain, the third gate is electrically connected to the second scan line, and the third drain is electrically connected to the first source of the first thin film transistor. Sexual connection. The fourth thin film transistor has a fourth gate, a fourth source and a fourth drain, and the fourth gate is electrically connected to the first source of the first thin film transistor and the third drain of the third thin film transistor The fourth source is electrically connected to the second source of the second thin film transistor. The fifth thin film transistor has a fifth gate, a fifth source and a fifth drain, the fifth gate is electrically connected to the illuminating signal line, the fourth source of the fifth source and the fourth thin film transistor, and the fourth The third source of the three thin film transistors is electrically connected. The sixth thin film transistor has a sixth gate, a sixth source and a sixth drain, the sixth gate is electrically connected to the second scan line, the sixth source is electrically connected to the data line, and the sixth drain is The second source of the second thin film transistor and the fourth source of the fourth thin film transistor are electrically connected.
基於上述，由於本發明之畫素結構之第一畫素單元以及第二畫素單元共同使用所述共用電晶體，因此可以節省畫素結構之第一畫素單元以及第二畫素單元中各自的薄膜電晶體所需佔用的畫素面積。如此一來，便可縮小畫素結構的面積，以利應用於高解析度產品上。即使不對畫素結構作縮小化，也可在所省下的畫素結構的空間中設置其他元件或構件。Based on the above, since the first pixel unit and the second pixel unit of the pixel structure of the present invention use the common transistor together, the first pixel unit and the second pixel unit of the pixel structure can be saved. The area of the pixel required for the thin film transistor. In this way, the area of the pixel structure can be reduced to be applied to high-resolution products. Even if the pixel structure is not reduced, other components or components can be placed in the space of the saved pixel structure.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1是根據本發明一實施例之有機發光元件的畫素結構的上視示意圖。圖2是圖1之畫素結構的等效電路圖。為了詳述本發明，圖1之畫素結構省略繪示發光元件的膜層。有關發光元件之膜層將於後續段落詳細說明。1 is a top plan view showing a pixel structure of an organic light emitting device according to an embodiment of the present invention. 2 is an equivalent circuit diagram of the pixel structure of FIG. 1. In order to explain the present invention in detail, the pixel structure of Fig. 1 omits the film layer of the light-emitting element. The film layer of the light-emitting element will be described in detail in the subsequent paragraphs.
請先參考圖1以及圖2，本實施例之畫素結構包括第一掃描線SL1以及第二掃描線SL2、資料線DL、參考訊號線RL、發光訊號線EL、共用電晶體T、第一畫素單元U以及第二畫素單元U1。Referring to FIG. 1 and FIG. 2, the pixel structure of the embodiment includes a first scan line SL1 and a second scan line SL2, a data line DL, a reference signal line RL, a light-emitting signal line EL, a common transistor T, and a first The pixel unit U and the second pixel unit U1.
第一掃描線SL1、第二掃描線SL2以及資料線DL是設置在基板上。資料線DL約略垂直第一掃描線以及第二掃描線設置。換言之，資料線DL的延伸方向與第一掃描線SL1及第二掃描線SL2的延伸方向垂直。另外，第一掃描線SL1及第二掃描線SL2與資料線DL屬於不同的膜層。基於導電性的考量，第一掃描線SL1及第二掃描線SL2與資料線DL一般是使用金屬材料。然，本發明不限於此。The first scan line SL1, the second scan line SL2, and the data line DL are disposed on the substrate. The data line DL is disposed approximately perpendicular to the first scan line and the second scan line. In other words, the extending direction of the data line DL is perpendicular to the extending direction of the first scanning line SL1 and the second scanning line SL2. In addition, the first scan line SL1 and the second scan line SL2 and the data line DL belong to different film layers. Based on the conductivity considerations, the first scan line SL1 and the second scan line SL2 and the data line DL are generally made of a metal material. However, the invention is not limited thereto.
參考訊號線RL是設置在基板上。根據本實施例，參考訊號線RL約略平行第一掃描線SL1以及第二掃描線SL2設置。換言之，參考訊號線RL的延伸方向與第一掃描線SL1及第二掃描線SL2的延伸方向平行。然，本發明不限於此。根據其他的實施例，參考訊號線RL亦可以是平行資料線DL設置。在本實施例中，參考訊號線RL有一部分是與資料線DL屬於同一膜層，參考訊號線RL的另一部分則是與第一掃描線SL1及第二掃描線SL2屬於同一膜層，且參考訊號線RL的所述兩個部分是藉由接觸窗V2、V2’而彼此電性連接。The reference signal line RL is disposed on the substrate. According to this embodiment, the reference signal line RL is disposed approximately parallel to the first scan line SL1 and the second scan line SL2. In other words, the extending direction of the reference signal line RL is parallel to the extending direction of the first scanning line SL1 and the second scanning line SL2. However, the invention is not limited thereto. According to other embodiments, the reference signal line RL may also be a parallel data line DL setting. In this embodiment, a part of the reference signal line RL belongs to the same film layer as the data line DL, and another part of the reference signal line RL belongs to the same film layer as the first scan line SL1 and the second scan line SL2, and the reference The two portions of the signal line RL are electrically connected to each other by the contact windows V2, V2'.
發光訊號線EL是設置在基板上。根據本實施例，發光訊號線EL約略平行第一掃描線SL1以及第二掃描線SL2設置。換言之，參考訊號線RL的延伸方向與第一掃描線SL1及第二掃描線SL2的延伸方向平行。The illuminating signal line EL is disposed on the substrate. According to this embodiment, the illuminating signal line EL is disposed approximately parallel to the first scan line SL1 and the second scan line SL2. In other words, the extending direction of the reference signal line RL is parallel to the extending direction of the first scanning line SL1 and the second scanning line SL2.
共用電晶體T具有共用閘極G、共用源極S與共用汲極D，且共用閘極G與第一掃描線SL1電性連接，共用汲極D與參考訊號線RL電性連接。根據本實施例，共用汲極D是藉由接觸窗V1而與參考訊號線RL電性連接。The common transistor T has a common gate G, a common source S and a common drain D, and the common gate G is electrically connected to the first scan line SL1, and the common drain D is electrically connected to the reference signal line RL. According to this embodiment, the shared drain D is electrically connected to the reference signal line RL through the contact window V1.
第一畫素單元U具有第一薄膜電晶體T1、第二薄膜電晶體T2、第三薄膜電晶體T3、第四薄膜電晶體T4、第五薄膜電晶體T5、第六薄膜電晶體T6、電容器C以及發光元件O。第二畫素單元U’具有第一薄膜電晶體T1’、第二薄膜電晶體T2’、第三薄膜電晶體T3’、第四薄膜電晶體T4’、第五薄膜電晶體T5’、第六薄膜電晶體T6’、電容器C’以及發光元件O’。The first pixel unit U has a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, a sixth thin film transistor T6, and a capacitor. C and the light-emitting element O. The second pixel unit U' has a first thin film transistor T1', a second thin film transistor T2', a third thin film transistor T3', a fourth thin film transistor T4', a fifth thin film transistor T5', and a sixth Thin film transistor T6', capacitor C', and light-emitting element O'.
在第一畫素單元U中，第一薄膜電晶體T1具有第一閘極G1、第一源極S1與第一汲極D1，第一閘極G1與第一掃描線SL1電性連接，第一汲極D1與共用電晶體T的共用源極S電性連接。In the first pixel unit U, the first thin film transistor T1 has a first gate G1, a first source S1 and a first drain D1, and the first gate G1 is electrically connected to the first scan line SL1. A drain D1 is electrically connected to the common source S of the common transistor T.
第二薄膜電晶體T2具有第二閘極G2、第二源極S2與第二汲極D2，第二閘極G2與發光訊號線EL電性連接。The second thin film transistor T2 has a second gate G2, a second source S2 and a second drain D2, and the second gate G2 is electrically connected to the illuminating signal line EL.
電容器C具有第一電容電極E1與第二電容電極E2，第一電容電極E1與第一薄膜電晶體T1的第一源極S1電性連接，第二電容電極E2與第二薄膜電晶體T2的第二汲極D2電性連接。The capacitor C has a first capacitor electrode E1 and a second capacitor electrode E2. The first capacitor electrode E1 is electrically connected to the first source S1 of the first thin film transistor T1, and the second capacitor electrode E2 and the second thin film transistor T2 are The second drain D2 is electrically connected.
根據本發明之一實施例，第二薄膜電晶體T2的第二汲極D2以及電容器C的第二電容電極E2電性連接至第一電源線(Vdd)。在此，第二薄膜電晶體T2的第二汲極D2是透過接觸窗V9而電性連接至第一電源線(Vdd)，電容器C的第二電容電極E2是透過接觸窗V11而電性連接至第一電源線(Vdd)。According to an embodiment of the invention, the second drain D2 of the second thin film transistor T2 and the second capacitive electrode E2 of the capacitor C are electrically connected to the first power supply line (Vdd). Here, the second drain D2 of the second thin film transistor T2 is electrically connected to the first power supply line (Vdd) through the contact window V9, and the second capacitive electrode E2 of the capacitor C is electrically connected through the contact window V11. To the first power line (Vdd).
第三薄膜電晶體T3具有第三閘極G3、第三源極S3與第三汲極D3，第三閘極G3與第二掃描線SL2電性連接，第三汲極D3與第一薄膜電晶體T1的第一源極S1電性連接。The third thin film transistor T3 has a third gate G3, a third source S3 and a third drain D3, the third gate G3 is electrically connected to the second scan line SL2, and the third drain D3 is electrically connected to the first thin film. The first source S1 of the crystal T1 is electrically connected.
第四薄膜電晶體T4具有第四閘極G4、第四源極S4與第四汲極D4，第四閘極G4與第一薄膜電晶體T1的第一源極S1以及第三薄膜電晶體T3的第三汲極D3電性連接，第四源極S4與第二薄膜電晶體T2的第二源極S2電性連接。在此，第四閘極G4是透過接觸窗V3、V5而電性連接至第一薄膜電晶體T1的第一汲極D1。The fourth thin film transistor T4 has a fourth gate G4, a fourth source S4 and a fourth drain D4, a fourth gate G4 and a first source S1 and a third thin film transistor T3 of the first thin film transistor T1. The third drain D3 is electrically connected, and the fourth source S4 is electrically connected to the second source S2 of the second thin film transistor T2. Here, the fourth gate G4 is electrically connected to the first drain D1 of the first thin film transistor T1 through the contact windows V3, V5.
第五薄膜電晶體T5具有第五閘極G5、第五源極S5與第五汲極D5，第五閘極G5與發光訊號線EL電性連接，第五源極S5與第四薄膜電晶體T4的第四汲極D4以及第三薄膜電晶體T3的第三源極S3電性連接。在此，第五源極S5是透過接觸窗V6、V7而與第四薄膜電晶體T4的第四汲極D4電性連接。The fifth thin film transistor T5 has a fifth gate G5, a fifth source S5 and a fifth drain D5, and the fifth gate G5 is electrically connected to the illuminating signal line EL, and the fifth source S5 and the fourth thin film transistor The fourth drain D4 of T4 and the third source S3 of the third thin film transistor T3 are electrically connected. Here, the fifth source S5 is electrically connected to the fourth drain D4 of the fourth thin film transistor T4 through the contact windows V6 and V7.
第六薄膜電晶體T6具有第六閘極G6、第六源極S6與第六汲極D6，第六閘極G6與第二掃描線SL2電性連接，第六源極S6與資料線DL電性連接，第六汲極D6與第二薄膜電晶體T2的第二源極S2以及第四薄膜電晶體T4的第四源極S4電性連接。在此，第六源極S6透過接觸窗V4與資料線DL電性連接。The sixth thin film transistor T6 has a sixth gate G6, a sixth source S6 and a sixth drain D6, and the sixth gate G6 is electrically connected to the second scan line SL2, and the sixth source S6 and the data line DL are electrically connected. The sixth drain D6 is electrically connected to the second source S2 of the second thin film transistor T2 and the fourth source S4 of the fourth thin film transistor T4. Here, the sixth source S6 is electrically connected to the data line DL through the contact window V4.
發光元件O與第五薄膜電晶體T5的第五汲極D5電性連接。在此，發光元件O透過接觸窗V8、V10與第五薄膜電晶體T5的第五汲極D5電性連接。The light emitting element O is electrically connected to the fifth drain D5 of the fifth thin film transistor T5. Here, the light-emitting element O is electrically connected to the fifth drain D5 of the fifth thin film transistor T5 through the contact windows V8 and V10.
在第二畫素單元U’中，第一薄膜電晶體T1’具有第一閘極G1’、第一源極S1’與第一汲極D1’，第一閘極G1’與第一掃描線SL1電性連接，第一汲極D1’與共用電晶體T的共用汲極S電性連接。In the second pixel unit U', the first thin film transistor T1' has a first gate G1', a first source S1' and a first drain D1', and the first gate G1' and the first scan line The SL1 is electrically connected, and the first drain D1' is electrically connected to the common drain S of the common transistor T.
第二薄膜電晶體T2’具有第二閘極G2’、第二源極S2’與第二汲極D2’，第二閘極G2’與發光訊號線EL電性連接。The second thin film transistor T2' has a second gate G2', a second source S2' and a second drain D2', and the second gate G2' is electrically connected to the illuminating signal line EL.
電容器C’具有第一電容電極E1’與第二電容電極E2’，第一電容電極E1’與第一薄膜電晶體T1’的第一源極S1’電性連接，第二電容電極E2’與第二薄膜電晶體T’的第二汲極D2’電性連接。The capacitor C' has a first capacitor electrode E1' and a second capacitor electrode E2'. The first capacitor electrode E1' is electrically connected to the first source S1' of the first thin film transistor T1', and the second capacitor electrode E2' is The second drain D2' of the second thin film transistor T' is electrically connected.
根據本發明之一實施例，第二薄膜電晶體T2’的第二汲極D2’以及電容器C’的第二電容電極E2’電性連接至第一電源線(Vdd)。在此，第二薄膜電晶體T2’的第二汲極D2’是透過接觸窗V9’而電性連接至第一電源線(Vdd)，電容器C’的第二電容電極E2’是透過接觸窗V11’而電性連接至第一電源線(Vdd)。According to an embodiment of the invention, the second drain D2' of the second thin film transistor T2' and the second capacitive electrode E2' of the capacitor C' are electrically connected to the first power supply line (Vdd). Here, the second drain D2' of the second thin film transistor T2' is electrically connected to the first power supply line (Vdd) through the contact window V9', and the second capacitive electrode E2' of the capacitor C' is through the contact window. V11' is electrically connected to the first power line (Vdd).
第三薄膜電晶體T3’具有第三閘極G3’、第三源極S3’與第三汲極D3’，第三閘極G3’與第二掃描線SL2電性連接，第三汲極D3’與第一薄膜電晶體T1’的第一源極S1’電性連接。The third thin film transistor T3' has a third gate G3', a third source S3' and a third drain D3', and the third gate G3' is electrically connected to the second scan line SL2, and the third drain D3 'The first source S1' of the first thin film transistor T1' is electrically connected.
第四薄膜電晶體T4’具有第四閘極G4’、第四源極S4’與第四汲極D4’，第四閘極G4’與第一薄膜電晶體T1’的第一源極S1’以及第三薄膜電晶體T3’的第三汲極D3’電性連接，第四源極S4’與第二薄膜電晶體T2’的第二源極S2’電性連接。在此，第四閘極G4’是透過接觸窗V3’、V5’而電性連接至第一薄膜電晶體T1’的第一源極S1’。The fourth thin film transistor T4' has a fourth gate G4', a fourth source S4' and a fourth drain D4', a fourth gate G4' and a first source S1' of the first thin film transistor T1' The third drain D3' of the third thin film transistor T3' is electrically connected, and the fourth source S4' is electrically connected to the second source S2' of the second thin film transistor T2'. Here, the fourth gate G4' is electrically connected to the first source S1' of the first thin film transistor T1' through the contact windows V3', V5'.
第五薄膜電晶體T5’具有第五閘極G5’、第五源極S5’與第五汲極D5’，第五閘極G5’與發光訊號線EL電性連接’第五源極S5’與第四薄膜電晶體T4’的第四汲極D4’以及第三薄膜電晶體T3’的第三源極S3’電性連接。在此，第五源極S5’是透過接觸窗V6’、V7’而與第四薄膜電晶體T4’的第四汲極D4’電性連接。The fifth thin film transistor T5' has a fifth gate G5', a fifth source S5' and a fifth drain D5', and the fifth gate G5' is electrically connected to the illuminating signal line EL 'the fifth source S5' The fourth drain D4' of the fourth thin film transistor T4' and the third source S3' of the third thin film transistor T3' are electrically connected. Here, the fifth source S5' is electrically connected to the fourth drain D4' of the fourth thin film transistor T4' through the contact windows V6' and V7'.
第六薄膜電晶體T6’具有第六閘極G6’、第六源極S6’與第六汲極D6’，第六閘極G6’與第二掃描線SL2電性連接’第六源極S6’與資料線DL電性連接’第六汲極D6’與第二薄膜電晶體T2’的第二源極S2’以及第四薄膜電晶體T4’的第四源極S4’電性連接。在此，第六源極S6’透過接觸窗V4’與資料線DL電性連接。The sixth thin film transistor T6' has a sixth gate G6', a sixth source S6' and a sixth drain D6', and the sixth gate G6' is electrically connected to the second scan line SL2 'the sixth source S6 'The sixth drain D6' electrically connected to the data line DL is electrically connected to the second source S2' of the second thin film transistor T2' and the fourth source S4' of the fourth thin film transistor T4'. Here, the sixth source S6' is electrically connected to the data line DL through the contact window V4'.
發光元件O’與第五薄膜電晶體T5’的第五汲極D5’電性連接。在此，發光元件O透過接觸窗V8’、V10’與第五薄膜電晶體T5的第五汲極D5電性連接。The light-emitting element O' is electrically connected to the fifth drain D5' of the fifth thin film transistor T5'. Here, the light-emitting element O is electrically connected to the fifth drain D5 of the fifth thin film transistor T5 through the contact windows V8' and V10'.
圖3為圖1之標號200的放大圖。根據以上所述，共用電晶體T是設置在第一畫素單元U與第二畫素單元U’的交界處，因此本發明之第一畫素單元U與第二畫素單元U’可以共同使用共用電晶體T。由於第一畫素單元U與第二畫素單元U’可以共同使用共用電晶體T，因此此種畫素結構的設計相較於無共用電晶體之設計的畫素結構來說可以節省約8.8%的面積。也就是，在既有的畫素結構的尺寸之下，可以另外空出8.8%的面積。所空出的面積可以另外設置其他構件或元件，也可以直接將畫素尺寸縮小，以利於應用在高解析度的顯示器上。FIG. 3 is an enlarged view of the reference numeral 200 of FIG. 1. According to the above, the common transistor T is disposed at the boundary of the first pixel unit U and the second pixel unit U', so that the first pixel unit U and the second pixel unit U' of the present invention can be common Use a common transistor T. Since the first pixel unit U and the second pixel unit U' can share the common transistor T, the design of the pixel structure can save about 8.8 compared to the pixel structure without the common transistor design. % area. That is, under the size of the existing pixel structure, an additional 8.8% of the area can be vacated. The vacant area can be additionally set with other components or components, or the pixel size can be directly reduced to facilitate application on a high-resolution display.
值得一提的是，上述共用電晶體T、第一薄膜電晶體T1,T1’、第二薄膜電晶體T2,T2’、第三薄膜電晶體T3,T3’、第四薄膜電晶體T4.T4’、第五薄膜電晶體T5,T5’以及第六薄膜電晶體T6,T6’可選自非晶矽薄膜電晶體、多晶矽薄膜電晶體及氧化物薄膜電晶體所組成族群其中之一及其組合。若是以多晶矽薄膜電晶體為例，所述薄膜電晶體之結構大致如下所述。It is worth mentioning that the above-mentioned shared transistor T, the first thin film transistor T1, T1', the second thin film transistor T2, T2', the third thin film transistor T3, T3', and the fourth thin film transistor T4.T4 ', the fifth thin film transistor T5, T5' and the sixth thin film transistor T6, T6' may be selected from the group consisting of amorphous germanium thin film transistor, polycrystalline germanium thin film transistor and oxide thin film transistor, and combinations thereof . In the case of a polycrystalline germanium film transistor, the structure of the thin film transistor is roughly as follows.
圖4是圖1中沿著剖面線A-A’以及剖面線B-B’的剖面示意圖。圖4是以共用電晶體之剖面以及第五薄膜電晶體之剖面為例來說明多晶矽薄膜電晶體之結構。實際是，第一、第二、第三、第四以及第六薄膜電晶體之結構也是類似結構。請參照圖4，共用電晶體T包括設置在基板100上之多晶矽層，其包括有源極S、通道CH以及汲極D。絕緣層102覆蓋住所述多晶矽層。在通道CH上方之絕緣層102上設置有閘極G。類似地，第五電晶體T5包括設置在基板100上之多晶矽層PO，其包括有源極S5、通道CH5以及汲極D5。絕緣層102覆蓋住所述多晶矽層PO。在通道CH5上方之絕緣層102上設置有閘極G5。Figure 4 is a schematic cross-sectional view taken along line A-A' and section line B-B' of Figure 1. 4 is a view showing the structure of a polycrystalline germanium thin film transistor by taking a cross section of a common transistor and a cross section of a fifth thin film transistor as an example. Actually, the structures of the first, second, third, fourth, and sixth thin film transistors are also similar structures. Referring to FIG. 4, the common transistor T includes a polysilicon layer disposed on the substrate 100, which includes a source S, a channel CH, and a drain D. An insulating layer 102 covers the polysilicon layer. A gate G is provided on the insulating layer 102 above the channel CH. Similarly, the fifth transistor T5 includes a polysilicon layer PO disposed on the substrate 100, which includes a source S5, a channel CH5, and a drain D5. An insulating layer 102 covers the polysilicon layer PO. A gate G5 is provided on the insulating layer 102 above the channel CH5.
此外，絕緣層104覆蓋住共用電晶體T以及第五電晶體T5。參考訊號線RL設置在絕緣層104上，且透過接觸窗V1與汲極D電性連接。在絕緣層104中還設置有源極與汲極金屬層(未標示出)，其分別與第一源極S5與第五汲極D5電性連接。Further, the insulating layer 104 covers the common transistor T and the fifth transistor T5. The reference signal line RL is disposed on the insulating layer 104 and electrically connected to the drain D through the contact window V1. A source and a drain metal layer (not shown) are further disposed in the insulating layer 104, and are electrically connected to the first source S5 and the fifth drain D5, respectively.
上述設置有電晶體之膜層在此又可稱為畫素結構層P。而在此畫素結構層P上方可另外設置發光元件O，如此即可構成有機發光元件之畫素結構。The film layer provided with the above transistor may be referred to herein as a pixel structure layer P. On the other hand, the light-emitting element O can be additionally disposed above the pixel structure layer P, so that the pixel structure of the organic light-emitting element can be constructed.
更詳細而言，絕緣層106覆蓋住絕緣層104，且絕緣層106上設置有第一電極層110。第一電極層110可與第五薄膜電晶體T5的汲極D5電性連接。根據本實施例，發光元件O的第一電極層110與第五薄膜電晶體T5的第五汲極D5之間是透過接觸窗V10而電性連接。In more detail, the insulating layer 106 covers the insulating layer 104, and the insulating layer 106 is provided with the first electrode layer 110. The first electrode layer 110 can be electrically connected to the drain D5 of the fifth thin film transistor T5. According to the embodiment, the first electrode layer 110 of the light-emitting element O and the fifth drain D5 of the fifth thin film transistor T5 are electrically connected through the contact window V10.
在第一電極層110上則設置有發光層112。發光層112可為有機發光層或無機發光層。根據發光層112所使用之材質，此有機發光元件可稱為有機有機發光元件或是無機有機發光元件。另外，每一畫素單元U或U’之發光元件O、O’的發光層112可為紅色有機發光圖案、綠色有機發光圖案、藍色有機發光圖案或是混合各頻譜的光產生的不同顏色(例如白、橘、紫、...等)發光圖案。A light emitting layer 112 is disposed on the first electrode layer 110. The light emitting layer 112 may be an organic light emitting layer or an inorganic light emitting layer. The organic light emitting element may be referred to as an organic organic light emitting element or an inorganic organic light emitting element depending on the material used for the light emitting layer 112. In addition, the light emitting layer 112 of the light emitting elements O, O' of each pixel unit U or U' may be a red organic light emitting pattern, a green organic light emitting pattern, a blue organic light emitting pattern, or a different color produced by mixing light of each spectrum. (for example, white, orange, purple, ..., etc.) illuminating patterns.
此外，發光層112上設置有第二電極層114。根據本發明之一實施例，發光元件O的第二電極層114是電性連接至第二電源線(Vss)。根據其他實施例，上述之發光元件O更可包括電子傳輸層、電子注入層、電洞傳輸層以及電洞注入層(未繪示)。Further, a second electrode layer 114 is disposed on the light emitting layer 112. According to an embodiment of the invention, the second electrode layer 114 of the light-emitting element O is electrically connected to the second power line (Vss). According to other embodiments, the light-emitting element O may further include an electron transport layer, an electron injection layer, a hole transport layer, and a hole injection layer (not shown).
上述之有機發光元件的畫素結構的參考訊號線RL的一部分是與掃描線同一膜層，且另一部分是與資料線同一膜層。然，本發明不限於此。根據其他實施例，參考訊號線RL亦可以設置在其他膜層，如下所述。A part of the reference signal line RL of the pixel structure of the above organic light-emitting element is the same film layer as the scanning line, and the other part is the same film layer as the data line. However, the invention is not limited thereto. According to other embodiments, the reference signal line RL may also be disposed on other film layers, as described below.
圖5是根據本發明另一實施例之畫素結構的上視示意圖。圖6是圖5中沿著剖面線A-A’以及剖面線B-B’的剖面示意圖。請參照圖5以及圖6，圖5與圖6之實施例與上述圖1及圖4之實施例相似，因此相同的元件以相同的符號表示，且不再重複贅述。圖5與圖6之實施例與上述圖1及圖4之實施例不同之處在於參考訊號線RL是與發光元件O的第一電極層110屬於同一膜層。根據此實施例，參考訊號線RL與共用電晶體T的汲極D是透過接觸窗V1而電性連接。Figure 5 is a top plan view of a pixel structure in accordance with another embodiment of the present invention. Fig. 6 is a schematic cross-sectional view taken along line A-A' and hatching B-B' in Fig. 5. Referring to FIG. 5 and FIG. 6 , the embodiment of FIG. 5 and FIG. 6 is similar to the embodiment of FIG. 1 and FIG. 4 , and therefore the same components are denoted by the same reference numerals and the description thereof will not be repeated. The embodiment of FIGS. 5 and 6 differs from the embodiment of FIGS. 1 and 4 described above in that the reference signal line RL is in the same film layer as the first electrode layer 110 of the light-emitting element O. According to this embodiment, the reference signal line RL and the drain D of the common transistor T are electrically connected through the contact window V1.
由於此實施例是將參考訊號線RL設置在與發光元件O的第一電極層110同一膜層，因此參考訊號線RL可以與第一掃描線SL1重疊設置。換言之，參考訊號線RL可設置在第一掃描線SL1的正上方。如此，便可進一步節省畫素結構中之構件或元件所需佔用的空間。Since the reference signal line RL is disposed on the same film layer as the first electrode layer 110 of the light-emitting element O in this embodiment, the reference signal line RL can be disposed to overlap the first scan line SL1. In other words, the reference signal line RL can be disposed directly above the first scan line SL1. In this way, the space required for components or components in the pixel structure can be further saved.
綜上所述，由於本發明之畫素結構之第一畫素單元以及第二畫素單元共同使用所述共用電晶體，因此可以節省畫素結構之第一畫素單元以及第二畫素單元中各自的薄膜電晶體所需佔用的面積。如此一來，便可縮小畫素結構的面積，以利應用於高解析度產品上。即使不對畫素結構作縮小化，也可在所省下的畫素結構的空間中設置其他元件或構件。In summary, since the first pixel unit and the second pixel unit of the pixel structure of the present invention use the common transistor together, the first pixel unit and the second pixel unit of the pixel structure can be saved. The area required for each of the thin film transistors. In this way, the area of the pixel structure can be reduced to be applied to high-resolution products. Even if the pixel structure is not reduced, other components or components can be placed in the space of the saved pixel structure.
此外，本發明可進一步將參考訊號線設置在與發光元件的第一電極層同一膜層。因此，參考訊號線可設置在第一掃描線的正上方。如此，便可進一步節省畫素結構中之構件或元件所需佔用的空間。Furthermore, the present invention can further provide the reference signal line on the same film layer as the first electrode layer of the light-emitting element. Therefore, the reference signal line can be disposed directly above the first scan line. In this way, the space required for components or components in the pixel structure can be further saved.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
100．．．基板100. . . Substrate
102、104、106．．．絕緣層102, 104, 106. . . Insulation
110．．．第一電極層110. . . First electrode layer
112．．．發光層112. . . Luminous layer
114．．．第二電極層114. . . Second electrode layer
SL1、SL2．．．掃描線SL1, SL2. . . Scanning line
DL．．．資料線DL. . . Data line
RL．．．參考訊號線RL. . . Reference signal line
EL．．．發光訊號線EL. . . Luminous signal line
T、T1~T6、T1’~T6’．．．薄膜電晶體T, T1~T6, T1'~T6’. . . Thin film transistor
G1~G6、G1’~G6’．．．閘極G1~G6, G1’~G6’. . . Gate
S1~S6、S1’~S6’．．．源極S1~S6, S1'~S6’. . . Source
D1~D6、D1’~D6’．．．汲極D1~D6, D1'~D6’. . . Bungee
C、C’．．．電容器C, C’. . . Capacitor
E1、E2、E1’、E2’．．．電容電極E1, E2, E1', E2'. . . Capacitor electrode
O、O’．．．發光元件O, O’. . . Light-emitting element
CH、CH5．．．通道CH, CH5. . . aisle
PO．．．多晶矽層PO. . . Polycrystalline layer
U、U’．．．畫素單元U, U’. . . Pixel unit
V1～V11、V1’～V11’．．．接觸窗V1 to V11, V1' to V11'. . . Contact window
Vdd、Vss．．．電源線Vdd, Vss. . . power cable
圖1是根據本發明一實施例之畫素結構的上視示意圖。1 is a top plan view of a pixel structure in accordance with an embodiment of the present invention.
圖2是圖1之畫素結構的等效電路圖。2 is an equivalent circuit diagram of the pixel structure of FIG. 1.
圖3是圖1之標號200的放大示意圖。FIG. 3 is an enlarged schematic view of the reference numeral 200 of FIG. 1.
圖4是圖1中沿著剖面線A-A’以及剖面線B-B’的剖面示意圖。Figure 4 is a schematic cross-sectional view taken along line A-A' and section line B-B' of Figure 1.
圖5是根據本發明另一實施例之畫素結構的上視示意圖。Figure 5 is a top plan view of a pixel structure in accordance with another embodiment of the present invention.
圖6是圖5中沿著剖面線A-A’以及剖面線B-B’的剖面示意圖。Fig. 6 is a schematic cross-sectional view taken along line A-A' and hatching B-B' in Fig. 5.
SL1、SL2．．．掃描線SL1, SL2. . . Scanning line
DL．．．資料線DL. . . Data line
RL．．．參考訊號線RL. . . Reference signal line
EL．．．發光訊號線EL. . . Luminous signal line
T、T1~T6、T1’~T6’．．．薄膜電晶體T, T1~T6, T1'~T6’. . . Thin film transistor
G1~G6、G1’~G6’．．．閘極G1~G6, G1’~G6’. . . Gate
S1~S6、S1’~S6’．．．源極S1~S6, S1'~S6’. . . Source
D1~D6、D1’~D6’．．．汲極D1~D6, D1'~D6’. . . Bungee
C、C’．．．電容器C, C’. . . Capacitor
E1、E2、E1’、E2’．．．電容電極E1, E2, E1', E2'. . . Capacitor electrode
O、O’．．．發光元件O, O’. . . Light-emitting element
Vdd、Vss．．．電源線Vdd, Vss. . . power cable
Claims (16)
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| US12/905,087 US8410481B2 (en) | 2010-07-08 | 2010-10-15 | Pixel structure and pixel structure of organic light emitting device |
| US13/762,371 US8710506B2 (en) | 2010-07-08 | 2013-02-08 | Pixel structure of organic light emitting device |
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| JP6225511B2 (en) * | 2013-07-02 | 2017-11-08 | セイコーエプソン株式会社 | Display device and electronic device |
| CN206179862U (en) * | 2016-10-08 | 2017-05-17 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
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| KR101057206B1 (en) * | 2004-04-30 | 2011-08-16 | 엘지디스플레이 주식회사 | Organic light emitting device |
| FR2871939B1 (en) | 2004-06-18 | 2007-01-26 | Commissariat Energie Atomique | IMPROVED ARRANGEMENT OF THE COMPONENTS OF A PIXEL OLED |
| TWI406228B (en) * | 2010-07-08 | 2013-08-21 | Au Optronics Corp | Pixel structure and pixel structure of organic emitting device |
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| TW201203203A (en) | 2012-01-16 |
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