TWI420663B - Pixel structure of organic emitting device - Google Patents

Description

Pixel structure of organic light-emitting device

The present invention relates to a pixel structure of an organic light-emitting device.

The information and communication industry has become the mainstream industry today, especially the portable communication display products are the focus of development. Since the flat panel display is the communication interface between people and information, its development is particularly important. An organic light-emitting display is an organic light-emitting device, which has great potential due to its advantages of self-illumination, wide viewing angle, power saving, simple program, low cost, wide operating temperature, high response speed, and full color. Therefore, it is expected to become the mainstream of next-generation flat panel displays.

In addition, the technology of transparent display panels has also been actively developed. Generally, in a transparent organic light-emitting display, a material having a high transmittance is often used as a material of an anode and a cathode, and even all metal layers in the display are changed to a high-penetration material. Although such a design can improve the transparency of the display panel, since the non-reflective layer in the organic light-emitting display has a resonant cavity structure, the brightness of the light is reduced, which in turn causes poor color performance.

The invention provides a pixel structure of an organic light-emitting device, which can not only improve the transparency of the organic light-emitting device, but also increase the brightness of the light-emitting device.

The invention provides a pixel structure of an organic light-emitting device, comprising a substrate, at least one active component, a first insulating layer, a first electrode layer, a second insulating layer, a light-emitting layer and a second electrode layer. The substrate has a plurality of sub-pixel regions, and each of the sub-pixel regions has a light-emitting region and a transparent region. The active component is located within the illumination region of the substrate. The first insulating layer covers the active device, wherein the first insulating layer is located in the light emitting region and is not disposed in the transparent region. The first electrode layer is located on the first insulating layer and is electrically connected to the active device, wherein the first electrode layer is located in the light emitting region and is not disposed in the transparent region. The second insulating layer is on the first insulating layer and the first electrode layer and exposes the first electrode layer, wherein the second insulating layer is located in the light emitting region and is not disposed in the transparent region. The luminescent layer is on the exposed first electrode layer, wherein the luminescent layer is located in the illuminating region and is not disposed in the transparent region. The second electrode layer is on the light emitting layer.

The invention provides a pixel structure of an organic light-emitting device, comprising a substrate, at least one active component, a first insulating layer, a first electrode layer, a second insulating layer, a light-emitting layer and a second electrode layer. The substrate has a plurality of sub-pixel regions, and each of the sub-pixel regions has a light-emitting region and a transparent region. The active component is located within the illumination region of the substrate. The first insulating layer covers the active device, wherein the first insulating layer has at least one first opening therein to expose a transparent region of the substrate. The first electrode layer is located in the light-emitting region, wherein the first electrode layer is disposed on the first insulating layer and electrically connected to the active device. The second insulating layer is on the first insulating layer and the first electrode layer and exposes the first electrode layer, wherein the second insulating layer has at least one second opening therein to expose the first opening. The luminescent layer is located in the illuminating region, wherein the luminescent layer is disposed on the exposed first electrode layer. The second electrode layer is disposed on the light emitting layer.

Based on the above, since the present invention removes the film layer in the transparent region of the pixel structure, the transparency of the pixel structure can be improved. In addition, in the present invention, the electrode layer and the luminescent layer of the pixel structure are disposed in the illuminating region, and the opaque material can be disposed in the illuminating region, so that the organic illuminating device can maintain the resonant cavity structure, thereby making the organic illuminating device The brightness of the light is increased.

The above described features and advantages of the present invention will be more apparent from the following description.

1 is a cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. Figure 2 is a partial top plan view of the pixel structure of Figure 1. In order to clearly illustrate the present embodiment, FIG. 2 only shows the active device, the first electrode layer, and the signal line electrically connected to the active device in the pixel structure of FIG. 1, and the luminescent layer and the second electrode are omitted. Floor.

Referring to FIG. 1 and FIG. 2, the pixel structure of the organic light-emitting device of the present embodiment includes a substrate 100, at least one active device T1, T2, a first insulating layer 106, a first electrode layer 108, a second insulating layer 110, and a light emitting layer. Layer 112 and second electrode layer 114.

The substrate 100 may be made of glass, quartz, organic polymer, or an opaque/reflective material (eg, conductive material, metal, wafer, ceramic, or other applicable material), or other applicable materials. . According to the present embodiment, the buffer layer 101 may be further provided on the surface of the substrate 100, which may prevent ions or impurities in the substrate 100 from diffusing into the elements formed on the substrate 100. The material of the buffer layer 101 is, for example, tantalum oxide, tantalum nitride, niobium oxynitride, other suitable inorganic materials, or a stacked layer of at least two of the above materials. In the present embodiment, the buffer layer 101 is a light-emitting region E and a transparent region T covering the substrate 100.

The substrate 100 has a plurality of sub-pixel regions P, and each of the sub-pixel regions P has a light-emitting region E and a transparent region T. In the present embodiment, the light-emitting area E and the transparent area T in each sub-pixel area P are respectively disposed at the upper and lower portions of the sub-pixel area P. However, the invention is not limited thereto. According to other embodiments, the arrangement of the light-emitting area E and the transparent area T in each sub-pixel area P may be other forms, for example, the light-emitting area E is located in the center of the sub-pixel area P and the transparent area T is located in the sub-pixel. On either side or around the area. Similarly, the present invention does not limit the number of light-emitting regions E and transparent regions T in each sub-pixel region P. In other words, there may be one or more illuminating regions E and one or more transparent regions T in each sub-pixel region P.

The active elements T1, T2 are located in the light-emitting area E of the substrate 100. According to this embodiment, the active devices T1 and T2 are further electrically connected to the signal lines (the scan lines SL, the data lines DL, and the power lines PL). Further, in the embodiment, the pixel structure further includes a capacitor C. In the present embodiment, the active devices T1 and T2 are exemplified by a top gate type thin film transistor (also referred to as a polycrystalline germanium thin film transistor).

The active device T1 has a gate G1, a source S1, a drain D1, and a channel CH1. The gate G1 of the active device T1 is electrically connected to the scan line SL. The source S1, the drain D1, and the channel CH1 of the active device T1 are formed in a semiconductor layer (polysilicon layer). A gate insulating layer 102 is interposed between the semiconductor layer and the gate G1, and an insulating layer 104 is additionally covered on the gate G1. The source S1 is electrically connected to the source metal layer SM1 through the contact window V1 formed in the insulating layers 102 and 104. The source metal layer SM1 is further electrically connected to the data line DL. The drain D1 is electrically connected to the gate metal layer DM1 through the contact window V2 formed in the insulating layers 102 and 104.

The active device T2 has a gate G2, a source S2, a drain D2, and a channel CH2. The source S2, the drain D2, and the channel CH2 of the active device T2 are formed in a semiconductor layer (for example, amorphous germanium, polycrystalline germanium, microcrystalline germanium, single crystal germanium, indium germanium zinc oxide, indium germanium oxide, indium zinc). An oxide, a ruthenium compound, or other suitable material, or a combination thereof, wherein the polycrystalline germanium layer is exemplified. Similarly, a gate insulating layer 102 is sandwiched between the above semiconductor layer and the gate G2, and an insulating layer 104 is covered on the gate G2. The source S2 is electrically connected to the source metal layer SM2 through the contact window V3 formed in the insulating layers 104, 102, and the drain D2 passes through the contact window V4 formed in the insulating layers 104, 102 and the gate metal layer DM2. Electrical connection. In addition, the source metal layer SM2 is electrically connected to the gate metal layer DM1. According to the embodiment, the gate G2 of the active device T2 is electrically connected to the drain D2 (the drain metal layer DM2) of the active device T1, and the source S2 (source metal layer SM2) of the active device T2 is connected to the power line. PL is electrically connected.

It is worth mentioning that the above insulating layers 102, 104 are disposed only in the light emitting region E and are not disposed in the transparent region T. The insulating layers 102, 104 therefore have at least one opening (not shown) in the transparent region T to expose the buffer layer 101.

The capacitor electrode E1 of the capacitor C is electrically connected to the drain D1 of the active device T1. The capacitor electrode E2 of the capacitor C is electrically connected to the power supply line PL.

In the present embodiment, two active components are combined with a capacitor (2T1C) as an example, but are not intended to limit the present invention. In other words, the present invention is not limited to the number of active elements and capacitors in each sub-pixel area P.

The first insulating layer 106 covers the active elements T1, T2, wherein the first insulating layer 106 is located in the light-emitting area E and is not disposed in the transparent area T. According to an embodiment of the invention, the first insulating layer 106 covers the active devices T1, T2 and the signal lines, and the first insulating layer 106 has at least one first opening O1 (shown in FIG. 1) to expose The transparent region T of the substrate 100. In more detail, the first opening O1 and the openings in the insulating layers 102, 104 together expose the buffer layer 101.

The first electrode layer 108 is located on the first insulating layer 106 and is electrically connected to the active device T2. In more detail, the first electrode layer 108 is electrically connected to the drain D2 (the drain metal layer DM2) of the active device T2 through the contact window V5 formed in the first insulating layer 106. In particular, the first electrode layer 108 described above is located in the light-emitting E region and is not disposed in the transparent region T.

According to this embodiment, the first electrode layer 108 is preferably an electrode layer having reflective properties. The first electrode layer 108 may be composed of a single reflective electrode layer or a plurality of conductive layers 108a/108b (as shown in FIG. 1). In the embodiment of FIG. 1, the upper electrode 108a of the first electrode layer 108 is a transparent material layer and the lower electrode 108b is a reflective material layer. Of course, in other embodiments, the upper electrode 108a of the first electrode layer 108 may be a reflective material layer and the lower electrode 108b may be a transparent material layer.

The second insulating layer 110 is located on the first insulating layer 106 and the first electrode layer 108 and exposes the first electrode layer 108, wherein the second insulating layer 110 is located in the light emitting region E and is not disposed in the transparent region T. In the present embodiment, the second insulating layer 110 is a barrier structure for the subsequent luminescent layer 112 formed on the first electrode layer 108. In other words, the formed second insulating layer 110 may restrict the formation of the luminescent layer 112 to a specific The position (ie, on the surface of the exposed first electrode layer 108). In this embodiment, the second insulating layer 110 has at least one second opening O2, and the second opening O2 exposes the first opening O1. In more detail, the second opening O2, the first opening O1 and the openings in the insulating layers 102, 104 together expose the buffer layer 101.

The luminescent layer 112 is located on the exposed first electrode layer 108, wherein the luminescent layer 112 is located in the illuminating region E and is not disposed in the transparent region T. The luminescent layer 112 may be a red organic illuminating pattern, a green organic illuminating pattern, or a blue organic The illuminating pattern is a luminescent pattern of different colors (for example, white, orange, purple, etc.) generated by mixing light of each spectrum. In addition, the electron-emitting layer, the electron injection layer, the hole transport layer, and the hole injection layer (not shown) may be further included in the light-emitting layer 112 to enhance the light-emitting efficiency of the light-emitting layer 112.

The second electrode layer 114 is on the light emitting layer 112. In the present embodiment, the second electrode layer 114 is located in the light-emitting area E and is not disposed in the transparent area T. In addition, the second electrode layer 112 is a transparent electrode layer, and the material thereof is, for example, a metal oxide or a laminate of thin metal. Therefore, the organic light-emitting device of the present invention is constituted by a top light-emitting structure (or an upward light-emitting structure), that is, the first electrode layer is made of a reflective material, and the second electrode layer is made of a transparent material, which is a main embodiment. The bottom light-emitting structure (or the downward light-emitting structure), that is, the first electrode layer is made of a transparent material, and the second electrode layer is made of a reflective material, and is not suitable for use in the present invention. Because the light-emitting region, for example, is located in the active device region, the light emitted by the light-emitting layer in the bottom light-emitting structure is absorbed by the opaque electrode of the active component in the active device region (eg, gate, source, drain, scan line) , data lines, capacitor electrodes, etc. are covered, and no light is present.

It is to be noted that the first electrode layer 108 and the light emitting layer may be disposed on the signal line of the pixel structure (for example, at least one of the scan line SL, the data line DL, and the power line PL) and/or the capacitor C. 112 and the second electrode layer 114. That is, the light-emitting area E may cover a place where a signal line (for example, at least one of the scan line SL, the data line DL, and the power line PL) and/or the capacitor C are disposed. Since the above-mentioned signal line and the capacitor are originally opaque, the light-emitting area E is covered with the signal line and the capacitor C, and the light-emitting area of the pixel structure can be further increased.

In the embodiment of FIG. 1, the first electrode layer 108, the light-emitting layer 112, and the second electrode layer 114 are disposed in the light-emitting region E, so that each of the sub-pixel regions P is a light-emitting region E that emits light, and is transparent. Zone T is not emitting light. However, since there is almost no film layer disposed in the transparent region T, the transparent T can maintain a high degree of transparency. In this way, the transparency of the pixel structure can be improved. Further, in the present embodiment, the first electrode layer 108, the light-emitting layer 112, and the second electrode layer 114 are disposed in the light-emitting region E. The illuminating area E does not need to contribute to the transparency of the pixel structure. Therefore, the first electrode layer 108 can be made of a material having high reflective properties, so that the pixel structure retains the resonant cavity structure, thereby improving the luminance of the pixel structure of the organic light-emitting device.

In the embodiment of FIG. 1, the second electrode layer 114 is disposed only in the light-emitting region E and is not disposed in the transparent region T. However, according to other embodiments, the second electrode layer 114 may be disposed in the light emitting region E and the transparent region T as shown in FIG. The embodiment of FIG. 3 is similar to the embodiment of FIG. 1. Therefore, the same components as those of the embodiment of FIG. 1 are denoted by the same reference numerals and the detailed description thereof will not be repeated. The embodiment of FIG. 3 is different from the embodiment of FIG. 1 in that the second electrode layer 114 is located in the light-emitting region E and in the transparent region T, and the second electrode layer 114 located in the light-emitting region E is located in the transparent region T. The second electrode layer 114 is preferably separated. In other embodiments, the second electrode layer 114 is located in the light emitting region E and in the transparent region T, and the second electrode layer 114 located in the light emitting region E and the second electrode layer 114 located in the transparent region T are connectable of. Since the second electrode layer 114 is a transparent electrode layer, even if the second electrode layer 114 is provided in the transparent region T, the transparent region T can be maintained with a certain degree of transparency.

In this embodiment, since the second insulating layer 110 has the second opening O2 in the transparent region T, the first insulating layer 106 has the first opening O1 in the transparent region T, and the insulating layers 104, 102 have openings in the transparent region T. The second opening O2, the first opening O1, and the openings in the insulating layers 104, 102 collectively expose the buffer layer 101. Therefore, the second electrode layer 114 covers the buffer layer 110 at the bottom of the opening and exposes a partial sidewall of the opening.

In addition, in the embodiment of FIG. 1 described above, only the buffer layer 101 is provided in the transparent region T, so that the transparency of the transparent region T can be increased. However, the method of increasing the transparency of the transparent region T can also be implemented in other embodiments, as described below.

4 is a cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of FIG. 4 is similar to the embodiment of FIG. 1. Therefore, the same components as those of the embodiment of FIG. 1 are denoted by the same reference numerals and the detailed description thereof will not be repeated. The embodiment of FIG. 4 is different from the embodiment of FIG. 1 in that the buffer layer is not disposed on the substrate 100, and the gate insulating layer 102 located in the light-emitting region E extends into the transparent region T. In this embodiment, since only the gate insulating layer 102 is provided in the transparent region T, the transparency of the transparent region T can be increased.

FIG. 5 is a cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of FIG. 5 is similar to the embodiment of FIG. 1. Therefore, the same components as those of the embodiment of FIG. 1 are denoted by the same reference numerals and the description thereof will not be repeated. The embodiment of FIG. 5 is different from the embodiment of FIG. 1 in that the gate insulating layer 102 in the light-emitting region E extends into the transparent region T. Therefore, in this embodiment, only the buffer layer 101 and the gate insulating layer 102 are provided in the transparent region T. Similarly, since only the buffer layer 101 and the gate insulating layer 102 are provided in the transparent region T of the present embodiment, the transparent region T can be maintained with a certain degree of transparency.

In the above embodiments, only the buffer layer 101, the gate insulating layer 102 or the buffer layer 101 and the gate insulating layer 102 are provided in the transparent region T. However, according to another embodiment, it is also possible that there is no film layer in the transparent region T, that is, the transparent region T is simply the substrate 100.

In addition, in the above several embodiments, the active elements in the pixel structure are all exemplified by a top gate type thin film transistor. However, according to other embodiments, the active device in the pixel structure of the present invention may also employ a bottom gate type thin film transistor, as described below.

6 is a cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of FIG. 6 is similar to the embodiment of FIG. 1. Therefore, the same components as those of the embodiment of FIG. 1 are denoted by the same reference numerals and the detailed description thereof will not be repeated. The embodiment of FIG. 6 is different from the embodiment of FIG. 1 in that the active device T is a bottom gate type thin film transistor including a gate G, a channel CH, a source S, and a drain D. The gate G is located on the substrate 100, the gate insulating layer 102 covers the gate G, the channel CH is located on the gate insulating layer 102, and the source and the drain D are located on the channel CH. Wherein, the channel CH is composed of a single layer or a plurality of layers of semiconductor materials, for example: amorphous germanium, polycrystalline germanium, microcrystalline germanium, single crystal germanium, indium germanium zinc oxide, indium germanium oxide, indium zinc oxide, germanium A compound, or other suitable material, or a combination of the above.

Similarly, the first insulating layer 106 covers the active device T. The first electrode layer 108 is located on the first insulating layer 106 and is electrically connected to the drain D of the active device T through the contact window V. The second insulating layer 110 is located on the first insulating layer 106 and the first electrode layer 108 and exposes the first electrode layer 108. The light emitting layer 112 is located on the first electrode layer 108, and the second electrode layer 114 is located on the light emitting layer 112.

Likewise, both the first insulating layer 106 and the second insulating layer 110 are disposed only in the light-emitting region E, and are not disposed in the transparent region T. Only the buffer layer 101 is provided in the transparent region. In more detail, the first insulating layer 106 and the second insulating layer 110 have openings O2, O2 therein that expose the buffer layer 101 in the transparent region T. Since only the buffer layer 101 is provided in the transparent region T, the transparency of the transparent region T can be increased.

In addition, the organic light-emitting device of the present invention is constituted by a top light-emitting structure (or an upward light-emitting structure), that is, the first electrode layer is made of a reflective material, and the second electrode layer is made of a transparent material, which is a main embodiment. The bottom light-emitting structure (or the downward light-emitting structure), that is, the first electrode layer is made of a transparent material, and the second electrode layer is made of a reflective material, and is not suitable for use in the present invention. Because the light-emitting region, for example, is located in the active device region, the light emitted by the light-emitting layer in the bottom light-emitting structure is absorbed by the opaque electrode of the active component in the active device region (eg, gate, source, drain, scan line) , data lines, capacitor electrodes, etc. are covered, and no light is present.

7 is a cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of FIG. 7 is similar to the embodiment of FIG. 6, and therefore the same components as those of the embodiment of FIG. 6 are denoted by the same reference numerals and the description thereof will not be repeated. The embodiment of FIG. 7 is different from the embodiment of FIG. 6 in that the buffer layer is not disposed on the substrate 100, and the gate insulating layer 102 located in the light-emitting region E extends into the transparent region T. In this embodiment, since only the gate insulating layer 102 is provided in the transparent region T, the transparency of the transparent region T can be increased.

FIG. 8 is a cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention. The embodiment of FIG. 8 is similar to the embodiment of FIG. 6, and therefore the same components as those of the embodiment of FIG. 6 are denoted by the same reference numerals and the description thereof will not be repeated. The embodiment of FIG. 8 is different from the embodiment of FIG. 6 in that the gate insulating layer 102 in the light-emitting region E extends into the transparent region T. Therefore, in this embodiment, only the buffer layer 101 and the gate insulating layer 102 are provided in the transparent region T. Similarly, since only the buffer layer 101 and the gate insulating layer 102 are provided in the transparent region T of the present embodiment, the transparent region T can be maintained with a certain degree of transparency.

Similarly, in the pixel structure having the bottom gate type thin film transistor of FIGS. 6 to 8 described above, the second electrode layer 114 is disposed only in the light emitting region E. However, according to other embodiments, the second electrode layer 114 can also be disposed in the light-emitting region E and the transparent region T (similar to the arrangement of the second electrode layer 114 of FIG. 3). The light-emitting region E and the second electrode layer 114 in the transparent region T may be selectively connected or not connected.

Similarly, in the above embodiments of FIGS. 6 to 8, only the buffer layer 101, the gate insulating layer 102 or the buffer layer 101 and the gate insulating layer 102 are provided in the transparent region T. However, according to another embodiment, it is also possible that there is no film layer in the transparent region T, that is, the transparent region T is simply the substrate 100.

In summary, the present invention completely removes the film layer in the transparent region of the pixel structure of the organic light-emitting device, or leaves only the buffer layer, the gate insulating layer, or the buffer layer and the gate insulating layer. And a light-emitting layer of a pixel structure is disposed in the light-emitting region. Since the illuminating region of the pixel structure mainly plays a role of illuminating, and the transparent region mainly provides a pixel structure, the ambient light outside the substrate is used to enhance the transparency of the pixel structure. Therefore, when the display device or the electronic device is formed, a frame (not shown) is used to accommodate the organic light-emitting device therein. At this time, the components in the frame relative to the transparent region do not shield the external ambient light from the outside of the substrate. Enter the organic light-emitting device. Therefore, when the user looks at the second electrode of the organic light-emitting device, the organic light-emitting device may increase the transparency or brightness due to the presence of the transparent region.

In addition, in the present invention, the electrode layer and the light-emitting layer of the pixel structure are disposed in the light-emitting region, and an opaque material may be disposed as the first electrode in the light-emitting region. The provision of the reflective material/opaque material in the light-emitting region can maintain the resonant cavity structure of the light-emitting region of the organic light-emitting device, thereby improving the light-emitting brightness of the organic light-emitting device. That is to say, the organic light-emitting structure in the pixel structure of the organic light-emitting device is more suitable for the top-emitting structure (or the upward-emitting structure), and less suitable for the bottom-emitting structure (or the downward-emitting structure), wherein The difference in the structure of the structure can be referred to the above embodiment.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100. . . Substrate

101. . . The buffer layer

102. . . Gate insulation

104,106,110. . . Insulation

108. . . First electrode layer

108a. . . Lower electrode

108b. . . Upper electrode

112. . . Luminous layer

114. . . Second electrode layer

T1, T2, T. . . Active component

C. . . Capacitor

G1, G2, G. . . Gate

S1, S2, S. . . Source

D1, D2, D. . . Bungee

CH1, CH2, CH. . . aisle

E1, E2. . . Capacitor electrode

V1～V5, V. . . Contact window

SM1, SM2. . . Source metal layer

DM1, DM2. . . Bungee metal layer

O1, O2. . . Opening

E. . . Luminous area

T. . . Transparent zone

P. . . Sub-pixel area

DL. . . Data line

SL. . . Scanning line

PL. . . power cable

1 is a cross-sectional view showing a pixel structure of an organic light-emitting device according to an embodiment of the present invention.

Figure 2 is a partial top plan view of the pixel structure of Figure 1.

3 to 8 are schematic cross-sectional views showing a pixel structure of an organic light-emitting device according to another embodiment of the present invention.

100. . . Substrate

101. . . The buffer layer

102. . . Gate insulation

104,106,110. . . Insulation

108. . . First electrode layer

108a. . . Lower electrode

108b. . . Upper electrode

112. . . Luminous layer

114. . . Second electrode layer

T1, T2. . . Active component

C. . . Capacitor

G1, G2. . . Gate

S1, S2. . . Source

D1, D2. . . Bungee

CH1, CH2. . . aisle

E1, E2. . . Capacitor electrode

V1 ~ V5. . . Contact window

SM1, SM2. . . Source metal layer

DM1, DM2. . . Bungee metal layer

O1, O2. . . Opening

E. . . Luminous area

T. . . Transparent zone

P. . . Sub-pixel area

Claims (19)

A pixel structure of an organic light-emitting device includes: a substrate defining a plurality of sub-pixel regions, each of the sub-pixel regions having a light-emitting region and a transparent region; at least one active component located in the light-emitting region of the substrate a first insulating layer covering the active device, wherein the first insulating layer is located in the light emitting region and is not disposed in the transparent region; a first electrode layer is located on the first insulating layer and is active The device is electrically connected, wherein the first electrode layer is located in the light-emitting region and is not disposed in the transparent region; a second insulating layer is disposed on the first insulating layer and the first electrode layer and exposes the first electrode layer An electrode layer, wherein the second insulating layer is located in the light-emitting region and is not disposed in the transparent region; a light-emitting layer is located on the exposed first electrode layer, wherein the light-emitting layer is located in the light-emitting region and Not disposed in the transparent region; and a second electrode layer on the light emitting layer. The pixel structure of the organic light-emitting device of claim 1, wherein the active device comprises a gate, a semiconductor layer, a source and a drain, and the gate and the semiconductor layer further comprise A gate insulation layer is provided. The pixel structure of the organic light-emitting device of claim 1, wherein the gate insulating layer extends into the transparent region. The pixel structure of the organic light-emitting device of claim 1, further comprising a buffer layer disposed on the light-emitting region of the substrate and the transparent region, and located under the active device. The pixel structure of the organic light-emitting device of claim 1, wherein the second electrode layer is located in the light-emitting region and is not disposed in the transparent region. The pixel structure of the organic light-emitting device of claim 1, wherein the second electrode layer is located in the light-emitting region and in the transparent region. The pixel structure of the organic light-emitting device of claim 1, wherein the second electrode layer is a transparent electrode layer. The pixel structure of the organic light-emitting device of claim 1, wherein the first electrode layer is a reflective electrode layer. The pixel structure of the organic light-emitting device of claim 1, wherein the first electrode layer comprises a plurality of conductive layers, and at least one of the conductive layers is a reflective layer. A pixel structure of an organic light-emitting device includes: a substrate defining a plurality of sub-pixel regions, each of the sub-pixel regions having a light-emitting region and a transparent region; at least one active component located in the light-emitting region of the substrate a first insulating layer covering the active device, wherein the first insulating layer has at least one first opening to expose the transparent region of the substrate; a first electrode layer is located in the light emitting region, wherein the first insulating layer a first electrode layer is disposed on the first insulating layer and electrically connected to the active device; a second insulating layer is disposed on the first insulating layer and the first electrode layer and exposing the first electrode layer, Wherein the second insulating layer has at least one second opening to expose the first opening; a light emitting layer is disposed in the light emitting region, wherein the light emitting layer is disposed on the exposed first electrode layer; and The second electrode layer is disposed on the light emitting layer. The pixel structure of the organic light-emitting device of claim 10, wherein the active device comprises a gate, a semiconductor layer, a source and a drain, and the gate and the semiconductor layer further comprise A gate insulation layer is provided. The pixel structure of the organic light-emitting device of claim 11, wherein the gate insulating layer extends into the transparent region. The pixel structure of the organic light-emitting device of claim 10, further comprising a buffer layer disposed on the light-emitting region of the substrate and the transparent region, and located under the active device. The pixel structure of the organic light-emitting device of claim 10, wherein the second electrode layer is located in the light-emitting region and is not disposed in the transparent region. The pixel structure of the organic light-emitting device of claim 10, wherein the second electrode layer is located in the light-emitting region and in the transparent region. The pixel structure of the organic light-emitting device of claim 15, wherein the second electrode layer covers a bottom of the first opening and exposes a partial sidewall of the first opening and the second opening. The pixel structure of the organic light-emitting device of claim 10, wherein the second electrode layer is a transparent electrode layer. The pixel structure of the organic light-emitting device of claim 10, wherein the first electrode layer is a reflective electrode layer. The pixel structure of the organic light-emitting device of claim 10, wherein the first electrode layer comprises a plurality of conductive layers, and at least one of the conductive layers is a reflective layer.