TWI404468B - Package substrate having single-layer circuit and fabrication method thereof - Google Patents
Package substrate having single-layer circuit and fabrication method thereof Download PDFInfo
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Abstract
Description
本發明係有關一種封裝基板,尤指一種單層線路之封裝基板及其製法。The invention relates to a package substrate, in particular to a package substrate of a single layer circuit and a preparation method thereof.
隨著半導體技術的演進,半導體產品已開發出不同封裝產品型態。一般多層線路之封裝基板係配置電性功能較強之半導體晶片,以藉由該封裝基板之線路層以達到線路擴散(Fan out)功能,再將該封裝基板與晶片接置於主機板或其他電路板。如第1圖所示,係為習知多層線路之封裝基板1,其係於一上、下表面10a,10b具有線路層11之基板本體10上分別形成增層線路層12所構成。因該封裝基板1之線路層11,12之數量越多,將使製造成本增加,且製造時間亦增加。With the evolution of semiconductor technology, semiconductor products have developed different package product types. Generally, a package substrate of a multi-layer circuit is provided with a semiconductor chip having a strong electrical function, so as to achieve a line out function by a circuit layer of the package substrate, and then the package substrate and the wafer are placed on a motherboard or other Circuit board. As shown in Fig. 1, a package substrate 1 of a conventional multilayer wiring is formed by forming a build-up wiring layer 12 on a substrate body 10 having an upper and lower surface 10a, 10b having a wiring layer 11. As the number of the wiring layers 11, 12 of the package substrate 1 increases, the manufacturing cost increases, and the manufacturing time also increases.
因此,當封裝基板配置較低階之半導體晶片時,並無需使用上述如此高階之封裝基板,故業界遂開發出一種單層線路之封裝基板,以降低生產成本及減少生產時間,使其利於量產。Therefore, when the package substrate is configured with a lower-order semiconductor wafer, and the above-mentioned high-order package substrate is not required, the industry has developed a single-layer circuit package substrate to reduce production cost and reduce production time, thereby facilitating the amount. Production.
如第2圖所示,係為習知單層線路之封裝基板2,其包括:具有上表面20a與下表面20b之基板本體20、形成於該基板本體20上表面20a上之線路層22、形成於該基板本體20上表面20a與線路層22上之第一絕緣保護層23a、以及形成於該基板本體20下表面20b上之第二絕緣保護層23b。其中,該基板本體20具有穿槽200以連通該基板本體20之上表面20a及下表面20b,且該線路層22具有用以電性連接晶片之以供打線之打線墊220(或供植金屬凸塊之凸塊墊)及用以電性連接電路板之供植焊球之植球墊221。再者,該第一絕緣保護層23a具有第一開口230a,令該打線墊220外露於該第一開口230a,而該第二絕緣保護層23b具有第二開口230b以連通該穿槽200,使該植球墊221外露於該穿槽200與第二開口230b中。又,該打線墊220及植球墊221上具有表面處理層24,該表面處理層24係為鎳、鈀、金所組群組之合金或多層金屬之其中一者。As shown in FIG. 2, it is a package substrate 2 of a conventional single-layer circuit, comprising: a substrate body 20 having an upper surface 20a and a lower surface 20b; a circuit layer 22 formed on the upper surface 20a of the substrate body 20, A first insulating protective layer 23a formed on the upper surface 20a of the substrate body 20 and the wiring layer 22, and a second insulating protective layer 23b formed on the lower surface 20b of the substrate body 20. The substrate body 20 has a through slot 200 for communicating with the upper surface 20a and the lower surface 20b of the substrate body 20, and the circuit layer 22 has a wire pad 220 for electrically connecting the wafer for wire bonding (or metallization). a bump pad of the bump) and a ball pad 221 for electrically connecting the solder ball of the circuit board. Furthermore, the first insulating protective layer 23a has a first opening 230a for exposing the bonding pad 220 to the first opening 230a, and the second insulating protective layer 23b has a second opening 230b for communicating with the through slot 200. The ball pad 221 is exposed in the through slot 200 and the second opening 230b. Moreover, the wire bonding pad 220 and the ball pad 221 have a surface treatment layer 24, which is one of an alloy of nickel, palladium, gold, or a plurality of layers.
惟,習知封裝基板2因線路層22僅形成於該基板本體20之一側(上表面20a),故無法如多層線路之封裝基板1之上、下兩側具有對稱層數之線路層11,12以互相抵消應力,導致該單層線路之封裝基板2會產生單向翹曲(warpage)之問題,因而無法進行後續如接置晶片之相關封裝製程,或是造成終端產品可靠度不佳等問題。However, since the conventional package substrate 2 is formed only on one side (upper surface 20a) of the substrate body 20, the circuit layer 11 having a symmetrical number of layers on the upper and lower sides of the package substrate 1 of the multilayer wiring cannot be used. 12, in order to cancel each other's stress, resulting in a problem of unidirectional warpage of the package substrate 2 of the single-layer circuit, and thus the subsequent packaging process such as the connection of the wafer, or the reliability of the terminal product is not good. And other issues.
因此,如何提供一種單層線路之封裝基板,以克服習知技術之基板翹曲之問題,實為一重要課題。Therefore, how to provide a single-layer circuit package substrate to overcome the problem of substrate warpage of the prior art is an important issue.
為克服習知技術之翹曲問題,本發明係提供一種單層線路之封裝基板,係包括:具有相對之第一表面與第二表面之基板本體、形成於該基板本體之第一表面上之線路層、形成於該基板本體之第二表面上之強化層、形成於該基板本體之第一表面與線路層上之第一絕緣保護層、以及形成於該基板本體之第二表面與強化層上之第二絕緣保護層。In order to overcome the problem of the warpage of the prior art, the present invention provides a package substrate of a single-layer circuit, comprising: a substrate body having a first surface and a second surface opposite to each other, formed on the first surface of the substrate body a circuit layer, a strengthening layer formed on the second surface of the substrate body, a first insulating protective layer formed on the first surface of the substrate body and the circuit layer, and a second surface and a strengthening layer formed on the substrate body The second insulating protective layer on the top.
前述之封裝基板中,該基板本體具有穿槽以連通該基板本體之第一表面及第二表面,且該基板本體之部分第一表面(上方未具有線路層之表面)係為間隔區,令該強化層對應該間隔區。又,該強化層之厚度可大於或小於該線路層之厚度。再者,該第一絕緣保護層具有第一開口,令該線路層之一側外露於該第一開口,而該第二絕緣保護層具有第二開口以連通該穿槽,使該線路層之另一側外露於該穿槽與第二開口中。In the above package substrate, the substrate body has a groove for communicating with the first surface and the second surface of the substrate body, and a portion of the first surface of the substrate body (the surface having no wiring layer above) is a spacer region. The enhancement layer corresponds to the spacer. Also, the thickness of the reinforcing layer may be greater or less than the thickness of the wiring layer. Furthermore, the first insulating protective layer has a first opening such that one side of the wiring layer is exposed to the first opening, and the second insulating protective layer has a second opening to communicate the through-groove, so that the circuit layer The other side is exposed in the through slot and the second opening.
由上可知,本發明之單層線路之封裝基板,係藉由該基板本體之第二表面上具有強化層,令該基板本體之一側應力與另一側達到平衡,相較於習知技術之不對稱單層線路之封裝基板,本發明可互相抵消應力,因而克服單向翹曲之問題。As can be seen from the above, the package substrate of the single-layer circuit of the present invention has a reinforcing layer on the second surface of the substrate body, so that the stress on one side of the substrate body is balanced with the other side, compared with the prior art. The package substrate of the asymmetric single-layer circuit can mutually offset the stress, thereby overcoming the problem of unidirectional warpage.
另外,依前述之本發明單層線路之封裝基板態樣,本發明復提供該單層線路之封裝基板之製法,其具體技術詳如後述。In addition, according to the package substrate aspect of the single-layer circuit of the present invention, the present invention provides a method for manufacturing the package substrate of the single-layer circuit, and the specific technical details thereof will be described later.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“下”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "upper", "lower" and "one" are used in the description for convenience of description, and are not intended to limit the scope of the invention, and the relative relationship may be changed or Adjustments, where there is no material change, are considered to be within the scope of the invention.
請參閱第3A至3E圖,係為本發明之單層線路之封裝基板之製法。Please refer to FIGS. 3A to 3E for the manufacturing method of the package substrate of the single layer circuit of the present invention.
如第3A圖所示,提供一具有上表面(第一表面)30a與下表面(第二表面)30b之基板本體30,且該基板本體30之上、下表面30a,30b上均敷設有一金屬層300a,300b。As shown in FIG. 3A, a substrate body 30 having an upper surface (first surface) 30a and a lower surface (second surface) 30b is provided, and a metal is applied on the upper and lower surfaces 30a, 30b of the substrate body 30. Layers 300a, 300b.
於本實施例中,係於Prepreg材(基板本體30)之兩側壓合一銅箔(金屬層300a,300b)以形成銅箔基板,無需使用BT材作核心板,故可使生產成本降低。In this embodiment, a copper foil (metal layer 300a, 300b) is pressed on both sides of the Prepreg material (substrate body 30) to form a copper foil substrate, and the BT material is not used as the core board, so that the production cost can be reduced. .
如第3B圖所示,進行圖案化製程,於該基板本體30上、下表面30a,30b之部分金屬層300a,300b上分別形成第一阻層31a與第二阻層31b。As shown in FIG. 3B, a patterning process is performed to form a first resist layer 31a and a second resist layer 31b on the metal layers 300a, 300b of the upper and lower surfaces 30a, 30b of the substrate body 30, respectively.
於本實施例中,該第一阻層31a與第二阻層31b之形成位置相互錯開,亦即該基板本體30上、下兩側的同一位置上不會同時具有阻層。然此為眾多實施態樣之一,其上、下阻層之佈設方式仍依產品需求不同而有所變化。In this embodiment, the positions of the first resist layer 31a and the second resist layer 31b are shifted from each other, that is, the same position on the upper and lower sides of the substrate body 30 does not have a resist layer at the same time. However, this is one of the many implementations, and the layout of the upper and lower barrier layers still varies according to product requirements.
再者,該第一阻層31a與第二阻層31b可為光阻,以藉由曝光顯影之方式,令該第一阻層31a與第二阻層31b之形成位置相互錯開。Furthermore, the first resistive layer 31a and the second resistive layer 31b may be photoresists to displace the first resistive layer 31a and the second resistive layer 31b from each other by exposure and development.
如第3C圖所示,蝕刻移除該基板本體30上、下表面30a,30b外露之金屬層300a,300b,令該基板本體30之部分上表面30a因未覆有金屬層300a而形成間隔區301,且該第一阻層31a下之金屬層300a係作為一線路層32a,而該第二阻層31b下之金屬層300b則作為一強化層32b。As shown in FIG. 3C, the exposed metal layers 300a, 300b of the upper and lower surfaces 30a, 30b of the substrate body 30 are etched away, so that a portion of the upper surface 30a of the substrate body 30 is separated by a metal layer 300a to form a spacer. 301, and the metal layer 300a under the first resist layer 31a serves as a wiring layer 32a, and the metal layer 300b under the second resist layer 31b serves as a reinforcing layer 32b.
所述之線路層32a具有上側(第三表面)320a及下側(第四表面)321a,其下側321a係結合於該基板本體30之上表面30a上。The circuit layer 32a has an upper side (third surface) 320a and a lower side (fourth surface) 321a, and a lower side 321a is bonded to the upper surface 30a of the substrate body 30.
所述之強化層32b之厚度亦可等於、大於或小於該線路層32a之厚度,其製法為當Prepreg材(基板本體30)之兩側壓合一銅箔(金屬層300a,300b)以形成銅箔基板時,可依需求使一側之銅箔厚於、薄於或等於另一側之銅箔。The thickness of the reinforcing layer 32b may also be equal to, greater than or less than the thickness of the circuit layer 32a, by forming a copper foil (metal layer 300a, 300b) on both sides of the Prepreg material (substrate body 30) to form In the case of a copper foil substrate, the copper foil on one side may be thicker, thinner than or equal to the copper foil on the other side as required.
故本發明可藉由圖案化不同態樣之銅箔以形成不同樣式之強化層,或控制銅箔之厚度,以達到強化層與線路層厚度不同之方式,以達到本結構平衡上、下表面應力之目的。Therefore, the present invention can form a different type of strengthening layer by patterning different kinds of copper foils, or control the thickness of the copper foil to achieve different thicknesses of the reinforcing layer and the circuit layer, so as to achieve the upper and lower surfaces of the structure. The purpose of stress.
接著,移除該第一阻層31a與第二阻層31b,使該線路層32a形成於該基板本體30之上表面30a上,且該線路層32a之上側320a具有打線墊320(或供植金屬凸塊之凸塊墊),而該強化層32b則形成於該基板本體30之下表面30b上並對應該間隔區301。Then, the first resistive layer 31a and the second resistive layer 31b are removed, so that the wiring layer 32a is formed on the upper surface 30a of the substrate body 30, and the upper side 320a of the circuit layer 32a has a wire pad 320 (or for planting) A bump pad of the metal bump, and the reinforcing layer 32b is formed on the lower surface 30b of the substrate body 30 and corresponds to the spacer 301.
藉由圖案化製程,使該基板本體30上、下表面30a,30b均覆蓋有金屬材(線路層32a與強化層32b),且該線路層32a與強化層32b之上、下位置相互錯開,亦即該基板本體30上、下兩側的同一位置上不會同時具有銅層。The upper and lower surfaces 30a, 30b of the substrate body 30 are covered with a metal material (the wiring layer 32a and the reinforcing layer 32b) by a patterning process, and the upper and lower positions of the circuit layer 32a and the reinforcing layer 32b are shifted from each other. That is, the same position on the upper and lower sides of the substrate body 30 does not have a copper layer at the same time.
再者,該強化層32b之形狀可為網狀,或依線路層32a之佈設而形成其他形狀。Further, the reinforcing layer 32b may have a mesh shape or may be formed in other shapes depending on the wiring layer 32a.
如第3D圖所示,形成複數穿槽300於該基板本體30中,以連通該基板本體30之上、下表面30a,30b,令該線路層32a之部分下側321a外露於該些穿槽300中,俾供作為植球墊321。As shown in FIG. 3D, a plurality of through slots 300 are formed in the substrate body 30 to communicate the upper and lower surfaces 30a, 30b of the substrate body 30, so that a portion of the lower side 321a of the circuit layer 32a is exposed to the through slots. In 300, 俾 is used as a ball pad 321 .
如第3E圖所示,形成一第一絕緣保護層33a於該基板本體30之上表面30a與線路層32a上,該第一絕緣保護層33a具有複數第一開口330a,令該些打線墊320對應外露於各該第一開口330a。As shown in FIG. 3E, a first insulating protective layer 33a is formed on the upper surface 30a of the substrate body 30 and the circuit layer 32a. The first insulating protective layer 33a has a plurality of first openings 330a for the bonding pads 320. Correspondingly exposed to each of the first openings 330a.
同時,形成一第二絕緣保護層33b於該基板本體30之下表面30b與強化層32b上,該第二絕緣保護層33b具有複數第二開口330b,以連通該些穿槽300,令各該植球墊321亦對應外露於各該第二開口330b,而完成所述之封裝基板3的製作。At the same time, a second insulating protective layer 33b is formed on the lower surface 30b of the substrate body 30 and the reinforcing layer 32b. The second insulating protective layer 33b has a plurality of second openings 330b for connecting the through slots 300. The ball pad 321 is also exposed to each of the second openings 330b to complete the fabrication of the package substrate 3.
於本實施例中,所述之第一及第二絕緣保護層33a,33b係為拒銲層,且該第二開口330b之孔徑係大於該穿槽300之孔徑,令該第二開口330b完全外露出該穿槽300。In the embodiment, the first and second insulating protective layers 33a, 33b are solder resist layers, and the aperture of the second opening 330b is larger than the aperture of the through slot 300, so that the second opening 330b is completely The through slot 300 is exposed.
又,該封裝基板3可依需求,形成表面處理層34於該打線墊320或植球墊321上,該表面處理層34係為鎳、鈀、金所組群組之合金或多層金屬之其中一者。Moreover, the package substrate 3 can be formed on the wire pad 320 or the ball pad 321 as needed, and the surface treatment layer 34 is an alloy of nickel, palladium, gold, or a plurality of layers of metal. One.
另外,因該強化層32b無電性功用,故該第二開口330b無需外露該強化層32b。In addition, since the reinforcing layer 32b has no electrical function, the second opening 330b does not need to expose the reinforcing layer 32b.
綜上所述,本發明之單層線路之封裝基板及其製法,主要藉由在封裝基板3的下表面30b(未具有線路層32a之一側)上設計無電性導通之金屬層(強化層32b),以平衡應力,而有效達到避免封裝基板3翹曲之目的。In summary, the package substrate of the single-layer circuit of the present invention and the method for fabricating the same are mainly designed by designing a non-electrically conductive metal layer on the lower surface 30b of the package substrate 3 (on the side without the wiring layer 32a) (strengthening layer) 32b), in order to balance the stress, effectively achieve the purpose of avoiding warpage of the package substrate 3.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
1,2,3...封裝基板1,2,3. . . Package substrate
10,20,30...基板本體10,20,30. . . Substrate body
10a,20a,30a...上表面10a, 20a, 30a. . . Upper surface
10b,20b,30b...下表面10b, 20b, 30b. . . lower surface
11,12,22,32a...線路層11,12,22,32a. . . Circuit layer
200,300...穿槽200,300. . . Grooving
220,320...打線墊220,320. . . Line mat
221,321...植球墊221,321. . . Ball pad
23a,33a...第一絕緣保護層23a, 33a. . . First insulating protective layer
23b,33b...第二絕緣保護層23b, 33b. . . Second insulating protective layer
230a,330a...第一開口230a, 330a. . . First opening
230b,330b...第二開口230b, 330b. . . Second opening
24,34...表面處理層24,34. . . Surface treatment layer
300a,300b...金屬層300a, 300b. . . Metal layer
301...間隔區301. . . Spacer
31a...第一阻層31a. . . First resistive layer
31b...第二阻層31b. . . Second resistive layer
32b...強化層32b. . . Strengthening layer
320a...上側320a. . . Upper side
321a...下側321a. . . Lower side
第1圖係為習知多層線路之封裝基板之剖面示意圖;1 is a schematic cross-sectional view of a package substrate of a conventional multilayer circuit;
第2圖係為習知單層線路之封裝基板之剖面示意圖;以及2 is a schematic cross-sectional view of a package substrate of a conventional single-layer line;
第3A至3E圖係為本發明單層線路之封裝基板之製法之剖面示意圖。3A to 3E are schematic cross-sectional views showing a method of manufacturing a package substrate of a single-layer wiring of the present invention.
3...封裝基板3. . . Package substrate
30...基板本體30. . . Substrate body
30a...上表面30a. . . Upper surface
30b...下表面30b. . . lower surface
300...穿槽300. . . Grooving
32a...線路層32a. . . Circuit layer
320...打線墊320. . . Line mat
321...植球墊321. . . Ball pad
32b...強化層32b. . . Strengthening layer
33a...第一絕緣保護層33a. . . First insulating protective layer
33b...第二絕緣保護層33b. . . Second insulating protective layer
330a...第一開口330a. . . First opening
330b...第二開口330b. . . Second opening
34...表面處理層34. . . Surface treatment layer
Claims (14)
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TW100119523A TWI404468B (en) | 2011-06-03 | 2011-06-03 | Package substrate having single-layer circuit and fabrication method thereof |
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TW100119523A TWI404468B (en) | 2011-06-03 | 2011-06-03 | Package substrate having single-layer circuit and fabrication method thereof |
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TW201251525A TW201251525A (en) | 2012-12-16 |
TWI404468B true TWI404468B (en) | 2013-08-01 |
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Citations (1)
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TW550983B (en) * | 2001-05-31 | 2003-09-01 | Hitachi Ltd | Wiring board and manufacturing method of the same |
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TW550983B (en) * | 2001-05-31 | 2003-09-01 | Hitachi Ltd | Wiring board and manufacturing method of the same |
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TW201251525A (en) | 2012-12-16 |
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