TWI395631B - Laser processing equipment that can control the length and intensity of laser beam - Google Patents
Laser processing equipment that can control the length and intensity of laser beam Download PDFInfo
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- TWI395631B TWI395631B TW099119025A TW99119025A TWI395631B TW I395631 B TWI395631 B TW I395631B TW 099119025 A TW099119025 A TW 099119025A TW 99119025 A TW99119025 A TW 99119025A TW I395631 B TWI395631 B TW I395631B
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- 239000000758 substrate Substances 0.000 claims description 17
- 239000010453 quartz Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000006096 absorbing agent Substances 0.000 claims 1
- 230000001788 irregular Effects 0.000 claims 1
- 239000003507 refrigerant Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
- B23K26/3584—Increasing rugosity, e.g. roughening
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
- B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystallography & Structural Chemistry (AREA)
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- Recrystallisation Techniques (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Laser Beam Processing (AREA)
Description
本發明有關一種鐳射加工設備，其設備用於採用鐳射誘導化學氣相沉積或鐳射的多晶矽(Polycrystalline silicon)等的退火，尤其有關一種可控制雷射光束的長度及強度的鐳射加工設備。The present invention relates to a laser processing apparatus for annealing using laser induced chemical vapor deposition or laser polycrystalline silicon, and more particularly to a laser processing apparatus capable of controlling the length and intensity of a laser beam.
在製造半導體、FPD及太陽能電池(solar cell)等時，若在高溫狀態下鍍膜(depositing thin-film)，會因熱化學反應(Thermochemical reaction)，造成反应器(Reactor)被污染或產生不必要的化合物等諸多問題。因此，正在採用鐳射誘導等離子化學氣相沉積等，實現低溫下鍍膜。When manufacturing semiconductors, FPDs, solar cells, etc., if a depositing thin-film is formed at a high temperature, the reactor may be contaminated or unnecessary due to a thermochemical reaction. Compounds and many other issues. Therefore, laser-induced plasma chemical vapor deposition or the like is being used to achieve coating at a low temperature.
另外，隨著基板的大型化，在鍍膜後進行退火(annealing)時，由於很難確保其均勻性，正在不斷推出各種應對方案。其中的一種就是採用鐳射的退火方法。In addition, as the size of the substrate increases, it is difficult to ensure uniformity when annealing is performed after plating, and various countermeasures are being introduced. One of them is the laser annealing method.
圖1是現有鐳射加工設備示意圖。如圖1，反應室(10)包括反應氣(Reaction gas)流出入口(11a、11b)，其頂部裝有石英窗(20)，而石英窗(20)的上方則裝有鐳射裝置(40)。在鐳射裝置(40)中照射的雷射光束透過石英窗(20)到達反應室(10)內的基板(30)。Figure 1 is a schematic view of a conventional laser processing apparatus. As shown in Fig. 1, the reaction chamber (10) includes a reaction gas outflow inlet (11a, 11b) having a quartz window (20) on the top and a laser device (40) above the quartz window (20). . The laser beam illuminated in the laser device (40) passes through the quartz window (20) to the substrate (30) in the reaction chamber (10).
圖2是圖1從鐳射裝置(40)照射的雷射光束(41)形態示意圖。如圖2所示，雷射光束(41)以簾狀(Curtain)垂直或小坡度(Gradient)狀態照射至基板(30)。基板(30)相對雷射光束(41)面以箭頭方向水平移動，從而實現雷射光束(41)照射於基板(30)的前面。圖2(a)是從上往下的基板示意圖，圖2(b)是基板的立體圖。Figure 2 is a schematic view showing the form of a laser beam (41) irradiated from the laser device (40) of Figure 1. As shown in FIG. 2, the laser beam (41) is irradiated to the substrate (30) in a Curtain vertical or a Gradient state. The substrate (30) is horizontally moved in the direction of the arrow with respect to the surface of the laser beam (41), so that the laser beam (41) is irradiated to the front of the substrate (30). 2(a) is a schematic view of the substrate from the top to the bottom, and FIG. 2(b) is a perspective view of the substrate.
但是，如圖3所示，由於基板(30)包括直接形成元件的元件領域(32)和不形成元件的周邊部(31)，因此需控制雷射光束(41)不照射到周邊部(31)，另外，在雷射光束(41)的邊緣(Edge)部分可能會出現衍射現象，因此應在施工過程中考慮該問題。雖然需要控制雷射光束(41)長度，但傳統技術卻不能控制雷射光束(41)長度，而且，雖然希望在工程中通過反饋控制雷射光束(41)的強度，可又沒有適當的手段。However, as shown in FIG. 3, since the substrate (30) includes the element region (32) in which the element is directly formed and the peripheral portion (31) in which the element is not formed, it is necessary to control the laser beam (41) not to be irradiated to the peripheral portion (31). In addition, diffraction may occur at the edge of the laser beam (41), so this problem should be considered during construction. Although it is necessary to control the length of the laser beam (41), conventional techniques cannot control the length of the laser beam (41), and although it is desirable to control the intensity of the laser beam (41) by feedback in engineering, there is no suitable means. .
因此，本發明需解決的課題在於，為提高鐳射加工效率，提供可控制雷射光束的長度及強度的鐳射加工設備。Therefore, the object of the present invention is to provide a laser processing apparatus capable of controlling the length and strength of a laser beam in order to improve laser processing efficiency.
本發明有關一種鐳射加工設備，其特徵在於包括：在內部安裝基板並在上方安裝石英窗的反應室；安裝於上述反應室的外部，使其位於上述石英窗的頂部，並將簾狀(Curtain)雷射光束照射於上述基板的鐳射裝置；安裝於上述鐳射裝置和上述石英窗之間，並隔離上述雷射光束的側面，為使沿著上述雷射光束的縱向水平移動，在上述雷射光束的兩端中至少安裝於一端的光束隔離手段。The present invention relates to a laser processing apparatus characterized by comprising: a reaction chamber in which a substrate is mounted inside and a quartz window is mounted thereon; and is installed outside the reaction chamber so as to be located at the top of the quartz window, and has a curtain shape (Curtain) a laser device that illuminates the substrate with the laser beam; is mounted between the laser device and the quartz window, and isolates a side surface of the laser beam to move horizontally along the longitudinal direction of the laser beam, A beam isolating means at least one end of the beam is mounted at one end.
在上述光束隔離手段的上方空間上再安裝反饋(feedback)手段，而上述光束隔離手段，對於上述雷射光束的照射方向傾斜地安裝，並且其上方有反射至上方的反射面；上述反饋(feedback)手段，將在上述光電探測器(photodetector)上測量的光束強度反饋(feedback)給上述鐳射設備，使輸入根據上述光束隔離手段反射的雷射光束後測量其強度，因此建議控制從上述鐳射設備上輸出的雷射光束強度。Further, a feedback means is further disposed on the upper space of the beam isolating means, and the beam isolating means is installed obliquely to the irradiation direction of the laser beam, and has a reflection surface reflected upward thereon; the feedback Means, feeding back the beam intensity measured on the above photodetector to the laser device, and measuring the intensity of the laser beam reflected by the beam isolation means, so it is recommended to control from the above laser device The intensity of the output laser beam.
此時，上述光電探測器(photodetector)可裝於反饋(feedback)手段的底部指定部位；而此時未安裝上述光電探測器(photodetector)的上述反饋(feedback)手段的底部剩餘部分上，建議安裝光束吸收手段。上述光束吸收手段，可以通過滾花(knurling)加工上述反饋(feedback)手段的底部形成。另外，也可以再包括調整上述光束吸收手段位置及角度的驅動部。At this time, the photodetector may be installed at a designated portion of the bottom of the feedback means; and at this time, the remaining portion of the bottom portion of the feedback means of the photodetector is not installed, and it is recommended to install Beam absorption means. The above beam absorbing means can be formed by knurling processing the bottom of the above feedback means. Further, a driving unit that adjusts the position and angle of the beam absorbing means may be further included.
根據本發明，可以控制入射於基板的雷射光束長度。另外，施工過程中也將可以即時控制雷射光束的強度。According to the present invention, the length of the laser beam incident on the substrate can be controlled. In addition, the intensity of the laser beam can be controlled in real time during construction.
以下參照附圖，詳細地說明本發明的優選實施例。如下實施例，只是為了理解本發明的內容而提供。若是該領域的專業人員，則可以在本發明的技術性思想上得以更多改變。因此，不可將本發明的權利範圍解釋為受限於這些實施例。Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are provided merely to understand the contents of the present invention. If it is a professional in the field, it can be changed more in the technical idea of the present invention. Therefore, the scope of the invention should not be construed as being limited to the embodiments.
圖4是本發明鐳射加工設備的部分正剖面示意圖；圖5是圖4沿A-A’方向的部分剖面立體圖。另外，圖6是光束隔離手段(50)的動靜平面概略圖。Figure 4 is a partial front cross-sectional view of the laser processing apparatus of the present invention; and Figure 5 is a partial cross-sectional perspective view of Figure 4 taken along the line A-A'. In addition, FIG. 6 is a schematic diagram of a dynamic and static plane of the beam isolating means (50).
如圖4及圖5，光束隔離手段(50)將設於鐳射裝置(40)和石英窗(20)之間，並如圖6所示，光束隔離手段(50)將隔離簾狀(Curtain)雷射光束(41)的兩端同時，分別設於雷射光束(41)的兩端，使能夠以雷射光束(41)的橫向箭頭方向水平移動。因此，將確定根據光束隔離手段(50)以雷射光束的橫向水平移動，並照射於基板(30)的雷射光束(41)的有效長度。在這裏，鐳射裝置(40)表示均包括控制鐳射光源及在此出現的雷射光束強度的衰減器。As shown in Figures 4 and 5, the beam isolating means (50) will be disposed between the laser device (40) and the quartz window (20), and as shown in Figure 6, the beam isolating means (50) will isolate the curtain (Curtain) Both ends of the laser beam (41) are simultaneously disposed at both ends of the laser beam (41) so as to be horizontally movable in the direction of the lateral arrow of the laser beam (41). Therefore, the effective length of the laser beam (41) that is horizontally moved by the beam isolating means (50) in the horizontal direction of the laser beam and irradiated to the substrate (30) will be determined. Here, the laser device (40) represents an attenuator that both controls the laser source and the intensity of the laser beam appearing there.
光束隔離手段(50)不僅隔離了雷射光束(41)，為反射至其上方還設有反射面，並按雷射光束(41)的照射方向傾斜地安裝。此時，如果以反射塗層形成反射面，雷射光束(41)添加于反射塗層上時會發生變質或結構變化的問題，因此，建議使用滑潤地加工處理光束隔離手段(50)材質面的方法製作反射面。The beam isolating means (50) not only isolates the laser beam (41), but also provides a reflecting surface for reflection thereto, and is obliquely mounted in the irradiation direction of the laser beam (41). At this time, if the reflective surface is formed by the reflective coating, the laser beam (41) may be deteriorated or structurally changed when it is added to the reflective coating. Therefore, it is recommended to use a smooth processing to treat the beam isolation means (50). The method of making a reflective surface.
圖4及圖5中，為了明確圖示，只圖示了設於兩端的光束隔離手段(50)中之一；而省略了反饋(feedback)手段(60)的冷媒(Refrigerant)流入口(63a)及冷媒(Refrigerant)流出口(63b)示意圖。In FIGS. 4 and 5, only one of the light beam isolating means (50) provided at both ends is illustrated for clarity of illustration, and the refrigerant inlet (63a) of the feedback means (60) is omitted. And a schematic diagram of the refrigerant flow outlet (63b).
通過光束隔離手段(50)反射的雷射光束(41)，入射到安裝於反饋(feedback)手段(60)底部的光電探測器(photodetector)(61)上。圖7是反饋(feedback)手段(60)底部的底視圖，並大致地顯示了以箭頭A方向向上看的結構。反饋(feedback)手段(60)，控制以光電探測器(photodetector)(61)測量輸入的雷射光束強度後，反饋(feedback)給鐳射裝置(40)並在鐳射裝置(40)中輸出的雷射光束強度。The laser beam (41) reflected by the beam isolating means (50) is incident on a photodetector (61) mounted on the bottom of the feedback means (60). Figure 7 is a bottom view of the bottom of the feedback means (60) and generally shows the structure looking up in the direction of arrow A. A feedback means (60) for controlling the intensity of the input laser beam by a photodetector (61), feeding back to the laser device (40) and outputting the lightning in the laser device (40) Beam intensity.
為了防止雷射光束(41)由於反饋(feedback)手段(60)再次反射後入射於基板(30)方向並對施工造成影響，在光電探測器(photodetector)(61)周圍安裝光束吸收手段(62)。光束吸收手段(62)將光電探測器(photodetector)(61)的周圍加工為凹凸形狀並實現，例如可以滾花加工或加工為齒輪形狀。另外，也可以通過加工使電探測器(photodetector)的周圍帶有傾斜部並予以實現。圖7中如同上述，用斜線顯示了為了光束吸收的加工部位。圖8是根據圖7 B-B’線的剖面圖，參照該圖可以看出表面為凹凸加工的傾斜部，並形成了光束吸收手段(62)。In order to prevent the laser beam (41) from being reflected by the feedback means (60) and incident on the substrate (30) direction and affecting the construction, a beam absorbing means is installed around the photodetector (61) (62). ). The beam absorbing means (62) processes the periphery of the photodetector (61) into a concavo-convex shape and realizes, for example, knurling or machining into a gear shape. Alternatively, the periphery of the photodetector may be provided with an inclined portion by machining. In Fig. 7, as described above, the processing portion for beam absorption is shown by oblique lines. Fig. 8 is a cross-sectional view taken along line B-B' of Fig. 7, and with reference to the figure, it can be seen that the surface is an inclined portion of the uneven processing, and a beam absorbing means (62) is formed.
為了防止由光束吸收手段(62)吸收的雷射光束導致的反饋(feedback)手段(60)的溫度上升，如圖9所示，光束吸收手段(62)的上方有冷媒，例如，反饋(feedback)手段(60)上設置冷媒(Refrigerant)流入(63a)、冷媒(Refrigerant)流出口(63b)，使N2氣隨著冷媒(Refrigerant)流路(65)而流。圖9中冷媒(Refrigerant)流入(65)顯示為直線型，但實際上為了提高冷卻效果也可以是彎曲狀態。另外，光束吸收手段(62)的一方延伸著連接在調整位置及角度的驅動部(70)的連接部(67)，從而，可以調整(C方向)並水平位置移動(D及E方向)光束吸收手段(62)的上下角度。因此，可以按光束隔離手段(50)上反射的雷射光束角度和位置入射於光束吸收手段(62)上。In order to prevent the temperature of the feedback means (60) caused by the laser beam absorbed by the beam absorbing means (62) from rising, as shown in Fig. 9, there is a refrigerant above the beam absorbing means (62), for example, feedback (feedback) The means (60) is provided with a refrigerant flow (63a) and a refrigerant flow outlet (63b), and the N2 gas flows along the refrigerant flow path (65). The refrigerant inflow (65) in Fig. 9 is shown as a straight line type, but actually it may be in a curved state in order to improve the cooling effect. Further, one of the light beam absorbing means (62) extends the connecting portion (67) of the driving portion (70) connected to the adjustment position and the angle, so that the beam can be adjusted (in the C direction) and moved horizontally (D and E directions). The upper and lower angles of the absorption means (62). Therefore, the angle and position of the laser beam reflected on the beam isolating means (50) can be incident on the beam absorbing means (62).
如上所述，根據本發明可以控制入射於基板(30)的雷射光束(41)長度；另外，實施輸入雷射光束(41)的強度後，將其反饋(feedback)給鐳射設備(40)，從而使在雷射光束(41)強度的施工過程中也可即時控制。As described above, according to the present invention, the length of the laser beam (41) incident on the substrate (30) can be controlled; in addition, after the intensity of the input laser beam (41) is applied, it is fed back to the laser device (40). So that it can be controlled instantly during the construction of the intensity of the laser beam (41).
10．．．反應室10. . . Reaction chamber
11a,11b．．．反應氣(Reaction gas)流出入口11a, 11b. . . Reaction gas flows out of the inlet
20．．．石英窗20. . . Quartz window
30．．．基板30. . . Substrate
31．．．周邊部31. . . Peripheral part
32．．．元件領域32. . . Component field
40．．．激光裝置40. . . Laser device
41．．．激光束41. . . Laser beam
50．．．光束隔離手段50. . . Beam isolation
60．．．反饋(feedback)手段60. . . Feedback means
61．．．光電探測器(photodetector)61. . . Photodetector
62．．．光束吸收手段62. . . Beam absorption means
63a,63b．．．冷媒(Refrigerant)流入口63a, 63b. . . Refrigerant flow inlet
圖1是現有鐳射加工設備示意圖。Figure 1 is a schematic view of a conventional laser processing apparatus.
圖2(a)、(b)是圖1的雷射光束(41)形態示意圖。2(a) and 2(b) are schematic views showing the form of the laser beam (41) of Fig. 1.
圖3是現有鐳射加工設備問題示意圖。Figure 3 is a schematic diagram of the problems of the prior laser processing equipment.
圖4是本發明鐳射加工設備的部分正剖面示意圖。Figure 4 is a partial front cross-sectional view showing the laser processing apparatus of the present invention.
圖5是本發明圖4沿A-A’方向的鐳射加工設備的部分剖面立體圖。Figure 5 is a partial cross-sectional perspective view of the laser processing apparatus of Figure 4 taken along the line A-A' of the present invention.
圖6是本發明光束隔離手段(50)的動靜平面概略圖。Figure 6 is a schematic diagram showing the dynamic and static plane of the beam isolating means (50) of the present invention.
圖7、8及圖9是本發明反饋(feedback)手段(60)示意圖。7, 8, and 9 are schematic views of the feedback means (60) of the present invention.
20‧‧‧石英窗20‧‧‧Quartz window
50‧‧‧光束隔離手段50‧‧‧ Beam isolation means
60‧‧‧反饋(feedback)手段60‧‧‧Feedback means
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