CN100571959C - Laser thin film poly-silicon annealing optical system - Google Patents

Abstract

The surface of the work heating means and the equipment of a kind of high-energy, high-repetition-rate are disclosed, described surface of the work heating means and equipment can comprise: pulse XeF laser, described pulse XeF laser are operated in 4000Hz or are higher than 4000Hz and produce the laser output light pulse light beam in the about central wavelength of 351nm; Optical system, described optical system with described laser output light pulse light beam narrow on the short-axis direction of described laser output light pulse light beam less than 20 μ m, and with described laser output light pulse beam spread, on the long axis direction of described light beam, to form the workpiece that covers described major axis scope; Described optical system comprises the field stop between described laser instrument and described workpiece; Described workpiece comprises wants heated layer; Wherein said optical system focuses on field stop place with the magnifying power of enough keeping following intensity distributions with described laser output light pulse light beam, be that described intensity distributions has enough steep side, can on too high strength level 2, do not stop beam distribution keeping enough steep beam distribution on the workpiece to allow field stop.Described equipment also comprises when described laser output light pulse the beam Propagation high-average power in the described laser output light pulse light beam and the arc aligning gear of line in the minor axis optical module during to described workpiece.The arc aligning gear of described line comprises a plurality of weak cross column.Described system can comprise the refraction and reflection projection system.Because laser diffraction and dispersing, described live width is less than how much restrictions.Described system can projection nominal XeF spectrum adjacent peak, improve overall depth of focus with the centre wavelength of the separation by each adjacent peak separately, described adjacent peak has different focal planes on described workpiece.Described system can be included in the field stop optical module and the arc aligning gear of line in the workpiece projection optics assembly, the arc aligning gear of line compensation line on described field stop plane in the described field stop optical module is arc, and the arc aligning gear of the line compensation line on described workpiece planarization in the described workpiece projection optics assembly is arc.

Description

Laser thin film poly-silicon annealing optical system

Invention field

The present invention relates to pulse laser system, described pulse laser system is used to relate to the processing technology of surface and/or substrate being handled with laser, described processing is to carry out under the situation of big area and high-repetition-rate, high power and pulse paired pulses dosage stability, and more specifically, relate to the fine rule optical pulse transmission system.

Related application: the application requires on July 1st, 2004 to submit, name is called " LASER THIN FILMPOLY-SILICON ANNEALING OPTICAL SYSTEM (laser thin film poly-silicon annealing optical system) ", sequence number is 10/884, the priority of 101 U. S. application, this U. S. application is to submit on February 18th, 2004, name is called " VERY HIGH ENERGY; HIGH STABILITY GAS DISCHARGE LASER SURFACETREATMENT SYSTEM (unusual high-energy; high stability gas discharge laser superficial treatment system) ", sequence number is 10/781, the part continuation application of the U. S. application of 251 (attorney docket is 2003-0105-02), this U. S. application is to submit on November 26th, 2003, name is called " VERY HIGH ENERGY; HIGH STABILITY GASDISCHARGE LASER SURFACE TREATMENT SYSTEM (unusual high-energy; high stability gas discharge laser superficial treatment system) ", sequence number is 10/722, the part continuation application of 992 U. S. application, this U. S. application is to submit on July 30th, 2003, name is called " CONTROL SYSTEM FOR TWO CHAMBER GASDISCHARGE LASER (control system that is used for two chamber gas discharge lasers) ", sequence number is the part continuation application of 10/631,349 U. S. application; And this U. S. application be submitted on August 30th, 2002, name is called the part continuation application that " LITHOGRAPHY LASER WITH BEAM DELIVERY AND BEAM POINTING CONTROL (have beam Propagation and beam-pointing control photoetching laser instrument) ", sequence number are 10/233,253 U. S. application; This U. S. application is to submit November 30 calendar year 2001, name is called " VERY NARROW BAND; TWO CHAMBER; HIGH REP RATE GAS DISCHARGE LASER SYSTEM (unusual arrowband; two chambeies; the gas discharge laser system of high-repetition-rate) ", sequence number is 10/012, the part continuation application of 002 U. S. application, this U. S. application is authorized to be U.S. Patent No. 6 on September 23rd, 2003,625,191, and this U. S. application is to submit August 29 calendar year 2001, name is called " VERYNARROW BAND; TWO CHAMBER; HIGH REP RATEGAS DISCHARGE LASER SYSTEM (unusual arrowband; two chambeies; the gas discharge laser system of high-repetition-rate) ", sequence number is 09/943, the part continuation application of 343 U. S. application, this U. S. application is U.S. Patent No. 6 now, 567,450, and this U. S. application is to submit July 30 calendar year 2001, name is called " HIGH REPETITION RATE GASDISCHARGE LASER WITH PRECISE PULSE TIMING CONTROL (gas discharge laser with high-repetition-rate of accurate pulse timing control) ", sequence number is 09/837, the part continuation application of 035 U. S. application, this U. S. application is United States Patent (USP) 6 now, 618,421, all these are disclosed in this and are included herein by reference.

The application is relevant with following application: on June 25th, 2003 submitted, name is called " METHOD ANDAPPARATUS FOR COOLING MAGNETIC CIRCUIT ELEMENTS (method and apparatus of cooling magnetic circuits element) ", sequence number is 10/607, the application of 407 (attorney docket is 2003-0051-01), and submit equally on June 25th, 2003, name is called " METHOD AND APPARATUS FOR ELECTRICALLYINTERCONNECTING HIGH VOLTAGE MODULES POSITIONED IN RELATIVELYCLOSE PROXIMITY (method and apparatus that is used for electric interconnection between the high-pressure modular of locating in relatively very approaching mode) ", sequence number is 10/606,412 (attorney docket is 2002-0042-01) application, submit December 21 calendar year 2001, name is called " TIMING CONTROL FOR TWO-CHAMBER GAS DISCHARGE LASERSYSTEM (timing controlled of two chamber gas discharge laser systems) ", sequence number is 10/036,727 application, and on May 7th, 2002 submit, name is called " GAS DISCHARGE ULTRAVIOLET LASER WITH ENCLOSEDBEAM PATH WITH ADDED OXIDIZER (the gas discharge ultraviolet laser with the sealing beam path that has added oxidant) ", sequence number is 10/141,201 application, and on January 31st, 2003 submit, name is called " AUTOMATIC GAS CONTROL SYSTEM FOR A GAS DISCHARGE LASER (the automatic gas control system that is used for gas discharge laser) ", sequence number is 10/356,168 application, and calendar year 2001 May 3 submit, name is called " INJECTION SEEDED LASER WITH PRECISE TIMING CONTROL (seed injection laser with accurate timing control) ", sequence number is 09/848,043 (the invention people is Ness, et al., publication number is 20020085606, open on July 4th, 2002) application, and on May 7th, 2002 submit, name is called " GAS DISCHARGE ULTRAVIOLET LASER WITH ENCLOSED BEAM PATH WITHADDED OXIDIZER (the gas discharge ultraviolet laser with the sealing beam path that has added oxidant) ", sequence number is 10/141,201 (the invention people is Pan, et al., publication number is US20020167986A1, open on November 14th, 2002) application, and calendar year 2001 December 21 submit, name is called " TIMING CONTROL FORTWO-CHAMBER GAS DISCHARGE LASER SYSTEM (timing controlled of two chamber gas discharge laser systems) ", sequence number is 10/036,727 (the invention people is Ershov, et al., publication number is US20020099269A1, open on May 29th, 2003) application, and calendar year 2001 November 30 submit, name is called " VERY NARROW BAND; TWO CHAMBER; HIGH REP RATE GAS DISCHARGE LASER SYSTEM (unusual arrowband; two chambeies; the gas discharge laser system of high-repetition-rate) ", sequence number is 10/012,002 application, and this application is U.S. Patent No. 6 now, 625,191, and submit April 18 calendar year 2001, name is called " HIGH REPETITION RATE GASDISCHARGE LASER WITH PRECISE PULSE TIMING CONTROL (gas discharge laser with high-repetition-rate of accurate pulse timing control) ", sequence number is 09/837,035 application, this application is U.S. Patent No. 6 now, 619,421, and name is called the U.S. Patent No. 6 of " MAGNETIC MODULATOR VOLTAGE ANDTEMPERATURE TIMING COMPENSATION CIRCUIT (magnetic adjuster voltage and temperature timer compensating circuit) ", 016,325, and license to Sandstrom et al.'s on May 23rd, 2000, name is called the U.S. Patent No. 6,067 of " LASER-ILLUMINATED STEPPER OR SCANNER WITH ENERGY SENSORFEEDBACK (laser irradiation step-by-step movement litho machine or scan-type litho machine with energy sensor feedback) ", 306, and on November 30th, 1999 submit, name is called " LONG-PULSE PULSE POWERSYSTEM FOR GAS DISCHARGE LASER (the long meter pulse pulse power system that is used for gas discharge laser) ", sequence number is 09/451,995 U. S. application, and on November 13rd, 2003 submitted, name is called the U. S. application of " LONG DELAYAND HIGH TIS PULSE STRETCHER (long delay and high TIS pulse stretcher) " (attorney docket is 2003-0109-01), and calendar year 2001 May 11 submit, name is called " FOUR KHZ GASDISCHARGE LASER (4KHz gas discharge laser) ", sequence number is 09/854,097 U. S. application, and name is called the U.S. Patent No. 6 of " RELIABLE, MODULAR PRODUCTION QUALITY NARROW-BAND HIGH REPRATE EXCIMER LASER (reliably; modularization; the arrowband high-repetition-rate excimer laser of industrial quality) ", 128,323, and name is called the U.S. Patent No. 6,067 of " EXCIMER LASER WITH PULSE MULTIPLEXER (excimer laser with pulse multiplexer) ", 311, and on December 17th, 2003 submit, name is called " GAS DISDCHARGE LASER LIGHT SOURCE BEAM DELIVERY UNIT (gas discharge laser light beam of light source transmission unit) ", sequence number is the application of 10/739,961 (attorney docket is 2003-0082-01), and submitted on November 12nd, 2003, name is called " LASERLITHOGRAPHYLIGHT SOURCEWITH BEAM DELIVERY (the laser lithography light source with beam Propagation) ", sequence number is 10/712,688 application, and on April 29th, 2003 submit, name is called " LITHOGRAPHY LASER WITH BEAMDELIVERY AND BEAM POINTING CONTROL (the photoetching laser instrument with the control of beam Propagation and beam-pointing) ", sequence number is the application of 10/425,361 (attorney docket is 2003-0040-01), and submitted on May 7th, 2002, name is called " LASEER LITHOGRAPHY LIGHT SOURC3WITH BEAMDELIVERY (the laser lithography light source with beam Propagation) ", sequence number is 10/141, the application of 216 (attorney docket is 2002-0039-01), and on September 25th, 2002 submit, name is called " LITHOGRAPHY LASERSYSTEM WITN IN-PLACE ALIGNMENT TOOL (the photoetching laser system with original place alignment tools) ", sequence number is 10/255,806 application, and this application is U.S. Patent No. 6 now, 704,340, and name is called " LITHOGRAPHY LASER WITH BEAM DELIVERY AND BEAM POINTING (the photoetching laser instrument with beam Propagation and beam-pointing) ", sequence number is 10/233,253 application, this application is to be U.S. Patent No. 6 now, 704,339, all these are disclosed in this and are included herein by reference.

The application is also that submit with on July 1st, 2004, name is called LASER THIN FILM POLY-SILICONANNEALING SYSTEM (laser thin film poly-silicon annealing system), sequence number is 10/884, the application to be authorized jointly of 547 (attorney docket is 2004-0062-01) is relevant, and the disclosure is included herein by reference at this.

Background technology

The cylindrical lens of making many rows (row) is known, for example by grinding and polish with recessed cylinder bar (rod), then grid (raster) are rotated to 90 ° to generate the cylindrical lens that intersects, they can be different with real axial symmetric lens, and difference is that they are significantly less than the diffraction limit of such utmost point weak lens (focal length that for example has 1mm square aperture and 80mm).

(http://www.eso.org/gen-fac/pubs/messenger/achive/no.114-dec03/mess-wilson.pdf)

Known JSW company is provided for finishing the equipment (apparatus) of the crystallization (crystallization) of non-crystalline silicon (amorphous silicon) film, purpose be with amorphous silicon membrane again crystallization be polysilicon (" Poly-si " or " poly "), thereby Production Example such as thin film transistor (TFT) on substrate are to be used for for example flat-panel monitor.This is called as quasi-molecule laser annealing (ELA), this is owing to utilized excimer laser (for example XeCl laser instrument) to carry out ELA annealing as light energy source, adopted comprehensive (resultant) fusion of described non-crystalline silicon and again crystallization form film poly layer, wherein, for example form the thin film transistor (TFT) grid circuit.

JSW is verified comes the ability of work with the substrate (substrate) of the surface area of the surface area of for example 370 * 470mm and 730 * 920mm, a kind of area is to have the beam sizes of 365 * 0.4mm wherein, excimer laser repetitive rate 300, overlapping 90%, scanning step pitch (pitch) 0.02, sweep length 470, scanning times equals that 1 instrument operates, every (sheet) carried out 23500 crystallization irradiations (shot) altogether, wherein every crystallization time is 78 seconds, utilized (wasting) irradiation of 21390 wastes, the handling capacities (throughput) of 24.6 screens (screen) per hour just, cause every altogether screen 44890 times irradiation and 150 seconds actuation time of every screen, wherein in a kind of situation in back, similarly numeral causes 2 scanning to cover described, has the sheet of wideer (920mm) in second kind of situation, every 157 seconds crystallization time, the irradiation of every 16698 wastes, 229 seconds actuation time and 15.70 handling capacity per hour.Lambda Phisik provides has the roughly machine of similar capabilities.

People's such as Kahlert H. " High-resolution optics for thin Si-film crystallization using excimerlasers:present status and future development (be used to adopt the high-resolution optical device of the thin silicon films crystallization of excimer laser: present situation and development in future) ", Proc.of SPIE-IS﹠amp; T, Electronic Imaging, SPIE Vol.5004 (2003), pp.20-27 (be called for short " Kahlert ") discussed be formed at the workpiece place super-laterally-growth (" SLG ") crystallization, the long light beam of the wide 370mm of taking advantage of of hundreds of μ m.In addition, discussed along continuous lateral solidification, as also discussing in licensing to many patents of Im, described many patents comprise: authorize November 27 calendar year 2001, name is called the U.S. Patent No. 6 of " CRYSTALLIZATION PROCES SING OF SEMICONDUCTOR FILM REGIONS ON ASUBSTRATE; AND DEVICES MADE THEREWITH (device of handling and making thus in the crystallization of substrate semiconductor-on-insulator diaphragm area) ", 322,625, this patent is based on submitting on November 27th, 1998, sequence number is 09/200,533 U. S. application; And on April 9th, 2002 authorize, name is called the U.S. Patent No. 6 of " METHOD ANDSYSTEM FOR PROVIDING A CONTINUOUS MOTION SEQUENTIAL LATERALSOLIDIFICATION (method and system along continuous lateral solidification of continuous motion is provided) ", 368,945, this patent is that submit based on March 16th, 2000, sequence number is 09/526,585 U. S. application; And on April 29th, 2003 licensed to people's such as Im, name is called the U.S. Patent No. 6 of " METHODS FOR PRODUCING UNIFORMLARGE-GRAINED AND GRAIN BOUNDARY LOCATION MANIPULATEDPOLYCRYSTALLINE THIN FILM SEMICONDUCTORS USING SEQUENTIAL LATERALSOLIDFICATION (adopting the method that generates the treated polycrystalline thin-film semiconductor of even megacryst granulation and position, grain boundary along continuous lateral solidification) ", 555,449, this patent is based on submitting on September 3rd, 1999, sequence number is 09/390,535 U. S. application; And on May 13rd, 2003 authorize, name is called the U.S. Patent No. 6 of " SYSTEM FORPROVIDING A CONTINUOUS MOTION SEQUENTIAL LATERAL SOLIDIFICATION (system along continuous lateral solidification of continuous motion is provided) ", 563,077, this patent is that submit based on March 30 calendar year 2001, sequence number is 09/823,547 U. S. application; And on June 3rd, 2003 license to people such as Im, name is called the U.S. Patent No. 6 of " SYSTEMS AND METHODS USING SEQUENTIAL LATERALSOLIDIFICATION FOR PRODUCING SINGLE OR POLYCRYSTALLINE SILICON THINFILMS AT LOW TEMPERATURES (adopting along continuous lateral solidification to generate the system and method for list or polysilicon membrane at low temperatures) ", 573,53, this patent is that submit based on September 3rd, 1999, sequence number is 09/390,537 U. S. application; And mandate on June 24th, 2003, name is called the U.S. Patent No. 6 of " SPECIALIZEDSUBSTRATES FOR USE IN SEQUENTIAL LATERAL SOLIDIFICATION PROCESSING (being used for the specialized substrates along continuous lateral solidification processing) ", 582,827, this patent is based on submitting on November 27th, 2000, sequence number is 09/722,778 U. S. application, and also in the disclosed patent application of the U.S., come into question, described disclosed patent application comprises: on May 22nd, 2003 is disclosed, the invention people is people such as Im, name is called the U. S. application No.2003/0096489A1 of " METHODS FOR PRODUCING UNIFORM LARGE-GRAINED AND GRAIN BOUNDARYLOCATION MANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORSUSING SEQUENTIAL LATERAL SOLIDIFICATION (adopting the method that generates the treated polycrystalline thin-film semiconductor of even megacryst granulation and position, grain boundary along continuous lateral solidification) ", the application of the disclosure is based on submitting on November 13rd, 2002, sequence number is 10/294,001 U. S. application; And on June 23rd, 2003 is disclosed; the invention people is people such as Im; name is called the U. S. application 2003/0119286A1 of " METHOD FORPRODUCING UNIFORM LARGE-GRAINED AND GRAIN BOUNDARY LOCATIONMANIPULATED POLYCRYSTALLINE THIN FILM SEMICONDUCTORS USINGSEQUENTIAL LATERAL SOLIDIFICATION (adopting the method that generates the treated polycrystalline thin-film semiconductor of even megacryst granulation and position, grain boundary along continuous lateral solidification) "; the application of the disclosure is based on submitting on December 3rd, 2002; sequence number is 10/308,958 U. S. application.

Other patents that many aspects of such film crystallization are discussed comprise: license to July 11 nineteen ninety-five Chae, name is called the U.S. Patent No. 5 of " METHOD OF MAKING A THIN FILM TRANSISTOR BY OVERLAPPINGANNEALING USING LASERS (making the method for thin film semiconductor by the overlapping annealing of adopting laser) ", 432,122, this patent is that submit based on November 3rd, 1993, sequence number is 147635 U. S. application; And January 23 calendar year 2001 license to Jung, name is called the U.S. Patent No. 6 of " METHOD OF FABRICATING THINFILM TRANSISTORS FOR A LIQUID CRYSTAL DISPLAY (manufacturing is used for the method for the thin film semiconductor of LCD) ", 177,301, this patent is that submit based on May 13rd, 1999, sequence number is 09/311,702 U. S. application; And November 13 calendar year 2001 license to Jung, name is called the U.S. Patent No. 6 of " LASERANNEALING METHOD (laser anneal method) ", 316,338, this patent is that submit based on June 28th, 2000, sequence number is 09/605,409 U. S. application; And April 10 calendar year 2001 license to people such as Yamazazi, name is called the U.S. Patent No. 6 of " APPARATUS AND METHOD FOR LASER RADIATION (apparatus and method of laser emission) ", 215,595, this patent is that submit based on May 30th, 2000, sequence number is 09/583,450 U. S. application; And October 9 calendar year 2001 license to people such as Zhang, name is called the U.S. Patent No. 6 of " LASER PROCESSING METHOD (laser processing method) ", 300,176, this patent is that submit based on July 19 nineteen ninety-five, sequence number is 504087 U. S. application; And on May 28th, 2002 license to people such as Noguchi, name is called the U.S. Patent No. 6 of " METHOD OF PRODUCING LIQUID CRYSTAL DISPLAYPANEL (method of working fluid crystal display) ", 396,560, this patent is that submit based on September 21st, 2000, sequence number is 09/667,758 U. S. application; And on April 1st, 2004 is disclosed, invent the people is called " SEMICONDUCTOR THIN FILM AND PROCESS FOR PRODUCTIONTHEREOF (semiconductive thin film and processing technology thereof) " for people such as Takeda, name U.S. Patent application, the application of the disclosure is that submit based on June 17th, 2003, sequence number is 10/462,792 U. S. application.

Kalhert notices that in the prior art, prior art is limited in laser pulse size, the live width of 400 μ m at the workpiece place.

Figure 1 shows that the optical layout of in Lahert, discussing that is used for Lambda Physik ELA machine.Referring to Fig. 1, can see assembly (assembly) 20.Assembly 20 comprises laser output beam 22, for example the output of XeCl LS 1000 excimer lasers of being made by Lambda Physik.Laser beam 22 is by attenuator (attenuator) 24, and this attenuator comprises a pair of attenuating plate 26.Then, laser beam 22 is expanded bundle by major axis expanded beam optics device 30 on long axis direction, described major axis expanded beam optics device 30 comprises first telescopic lenses 32 and second telescopic lenses 34, and both are the beam expanding telescope parts on the long axis direction that is formed on light beam 22 (telescopic element) together.Then, described light beam is by major axis homogenizer (homogenizer) 40, described homogenizer 40 is made up of with the parallel cylindrical mirror 44 of second row first row's cylindrical mirror 42, in described first row's cylindrical mirror 42 each has the focus on selecteed distance on the long axis direction between the two, the back is an imaging len 46, is used for the described major axis of imaging beam.Then, described light beam is by minor axis homogenizer 50, described minor axis homogenizer 50 comprises first row's cylindrical mirror 52 and second row's cylindrical mirror 54, each lens in wherein said first row's cylindrical mirror 52 have the last focus of selecteed distance between the two, the back is an imaging len 56, be used for being imaged at slit 62 places the light beam on the described short-axis direction, described slit is formed in the field stop (field stop) 60, and described field stop 60 also comprises object lens 64.Then, light beam 80 after widening is had mirror 90 half-twists of 90% reflectivity, then by light beam minor axis magnifying glass 100, described minor axis magnifying glass 100 is made up of (doublet) the cylindrical mirror of the 5X enlargement ratio with first lens 102 and second lens 104, and this cylindrical mirror is to being formed on the substrate 130 or the final ELA light beam 120 around substrate 130.Prior art assembly 20 also comprises beam quality monitoring system 110, and described system 110 comprises first ccd video camera 112 and second ccd video camera 112.

Fig. 2 only illustrate Fig. 1 assembly 20 the minor axis optical module element (component) and show two laser beams 22,22 ' the application on the Lambda of prior art Physik or JSW ELA machine, described pair of laser beam 22,22 ' from two single chamber Lambda Physik monostable oscillator excimer lasers, for example XeCl or KrF excimer lasers.Also show such fact in addition, the minor axis imaging of promptly stating light beam in field stop 60 places is overlapping, thereby has only portion of energy to pass through slit (slit) 62 in the overlapping beam distribution of combination.

Fig. 3 illustrates the described light beam that is used to be amplified on the short-axis direction and is used to expand the possible lens combination 30 of the described light beam on long axis direction, described lens combination 30 can comprise for example cylindrical convex lens 32, then be cylindrical concave lens 34, cause linear beam 120 attenuation and become elongated shape with described scanning direction quadrature on the axis direction of scanning direction.

Fig. 4 illustrates the embodiment of lens subassembly according to the many aspects of embodiment of the present invention, the light beam homogenization that explanation is implemented in major axis beam homogenizer 40 and minor axis beam homogenizer 50, described lens subassembly comprises substrate 140, and this substrate can be by the suitable material that can optically bear DUV light under desired strength level (MgF for example ₂Or CaF ₂) make, the for example about 1.2mm of the thickness of described material, and the cylinder on the every side in both sides refraction, flat-projection face microlens array, wherein, for example, the spacing of the lens in the array (lens pitch) for example is about 300 μ m, causes the intensity distributions of for example about 1 ° angle of divergence and far field flat-top (flat-top).Such lens subassembly can for example obtain from SussMicrooptics, and this assembly is marked as when selling: CC-Q-3001 °, and 5mmX10mm, high power-beam homogenizer.

People's such as A.Voutsas " Effect of process parameters on the structural characteristics of laterallygrown; laser-annealed polycrystalline silicon films (technological parameter is to cross growth; the influence of the architectural characteristic of the polysilicon film of laser annealing) ", Jour.of Appld.Phys., Vol.94, No.12 (on December 15th, 2003) (being called for short " Voutsas ") notices the importance of beam distribution parameter, especially with regard to lateral crystal growth on the short-axis direction of light beam, being disclosed in this and being included by reference of this article.Notice that as Voutsas this mainly is to be determined by the relation between the resolution capability (resolving power) (promptly being the numerical aperture of projecting lens (numerical aperture) haply) of critical dimension of beam-shaping figure (promptly being the width under the wide aspect ratio rectangle situation haply) and projecting optical device.This relation has been determined the edge " acutance (sharpness) " of beam distribution,, intensity is risen to 90% space requirement from 10% of for example maximum intensity that is.Efficient SLS handles and can require steep beam edge to distribute, to minimize the poor efficiency utilization of laser energy, as explaining in more detail among the Voutsas.In fact, because trading off between numerical aperture and depth of focus (depth of focus) requirement, this distribution can be arranged by the diffraction limit of projecting optical device.Fig. 4 is illustrated on the short-axis direction of described light beam and on the part of selecting, typical prior art spatial intensity distribution on substrate, for example, provide for example wide beam (beamlet) of 8-9mm by Optical devices previously discussed, described beam is to generate from 5: 1 projecting lens with numerical aperture about 50.05.Strength range corresponding to the SLS process window also is illustrated in Voutsas.For the intensity level outside this scope, the partial melting of film can together take place with the follow-up formation at the too low local particulate polycrystalline silicon material of intensity.Therefore, at each edge of light beam (de), the acutance of beam distribution can define the scope of this zone (regime).Depend on the width of beam, if under radiation parameter LGL only about half of less than width of light beam, then nucleation (nucleation) can occur in the center of light beam at random.Voutsas is also noted that if dL is a lateral growth length, and dc is the width in coring zone, center, so:

w＝2de+2dl+dc

Wherein w is a width of light beam.Voutsas is also noted that in order to optimize the beam utilization, requires de → 0 and dc → 0.And according to Voutsas, coring " the " center " zone can (for example by substantially reducing the width of beam) be eliminated effectively, and the beam edge zone can be limited but will never in fact be eliminated.Voutsas also points out the restriction except projecting optical device, and another source of beam distribution distortion (distoration) is to focus on.Given numerical aperture for projecting optical device, can determine depth of focus (depth-focus), for example define projecting lens and by the irradiation sample surface spacing from change degree, described change degree causes the insignificant in fact variation of lens imaging ability (being the resolution capability of lens).For example, for given projecting lens, if the position of sample plane exceeds the restriction of depth of focus, the distortion of imaging beam distribution may take place, for example self is shown as " fuzzy "; Promptly, can not differentiate imaging beam fully owing to focus on and cross under the situation about focusing on.According to Voutsas, under this condition, largest beam intensity reduces and the edge becomes more scatters, and for example has so not steep gradient or so not precipitous gradient.In other words, de increases, and the possibility of the coring of beam centre also increases.Voutsas is also noted that it is the function of unit from the degree of best focal plane out of focus (defocusing) that LGL is changed to mm, for example owing to the edge diffusion (this can cause the light beam poor efficiency of cross growth partly to increase) that increases in the beam distribution, so lateral growth length is owing to out of focus is reduced.Be also noted that edge length is changed to the function of out of focus, wherein under the situation of the out of focus that increases, the minimizing of lateral growth length can be accompanied by the increase thereupon of edge length.Votasas points out to increase laser and can flow (fluence) and can compensate out of focus loss on the LGL more or less, but, reunion (agglomeration) can cause restriction to the degree of this compensation, point out in order to determine optimum substrate step pitch, for example may must consider the distortion of the beam distribution that causes owing to out of focus to keep the continuity that increases on the large tracts of land.

The glass substrate that becomes known for using the AMLCD of ELA to make comprises described in the MIE 101 of Corning (in August, 2002) for example Eagle described in the PEI 201 (in December, 2002) of 1737 display level glass substrate described in the PEI 101 of 1737AMLCD glass substrate, Corning (in December, 2002), Corning ^2000TMDisplay level glass substrate, and " Glass substrates for AMLCD Applications:Propertiesand Implications (be used for the glass substrate that AMLCD uses: performance and essence) " (TIP 101, in February, 2002) and " Support Designs for Reducing the Sag of Horizontally Supported Sheets (being used to reduce by the supported design of the sheet of horizontal support depression) " (TIP 303, in February, 2003), their disclosure is incorporated herein by reference.

Fig. 4 according to " A Study on Laser Annealed Polycrystalline Silicon ThinFilm Transistors (TFTs) with SiNx Gate Insulator (for the research of the polycrystalline SiTFT of the laser annealing) " chapter 5 " Electrical and Structural Properties of ELA Poly-SiFilms (the electric and structure attribute of ELA polysilicon film) " of K.Lee. in the prior art with SiNx gate insulator ( Http:// tftlcd.khu.ac.kr/reserch/poly-Si/chapter5.html), schematically show the technological process of (" the ELA ") polysilicon film that is used to prepare quasi-molecule laser annealing.As shown in Figure 4, can use XeCl excimer laser system (not shown) in the annealing device that JSW company for example provided with rectangular light beam shape.On the glass substrate 132 of cleaning, deposit SiO by APCVD ₂Cushion 134.Deposit the thick non-crystalline silicon of 70nm by PECVD: hydroxide (" a-Si:H ") film 136, as the parent material of ELA.The a-Si:H film is by with 150mJ/cm ²Scanning, have 94% overlapping PRK and come dehydrogenation (dehydrogenated), to form amorphous silicon layer 138.At last, the a-Si of dehydrogenation: layer 138 by ELA with 94% overlap 300 ℃ of scannings and by crystallization, to form polysilicon layer 138.Laser energy density can be at 240-330mJ/cm ²Between change, finding best laser intensity, thereby obtain high-quality polysilicon film 138.

JSW ELA system has the Optical devices that relatively simply are used for crystallization and activation (activation); but the JSWELA system produces the micro-structural of little crystal grainization; and have only about 100 TFT mobility performance and 25 handling capacity per hour only, though high relatively every maintenance cost and the insensitive process allowance of focusing to energy-sensitive.The Optical devices that are used for crystallization that JWS 2 Shot (twice irradiation) SLS system has relative complex produce crystal grain and the mobility between about 150 and 200 of 2-3 μ m, and 35 handling capacity per hour.It has than the every maintenance cost of JWSELA cheap about 32%, and have process allowance insensitive to energy but the focusing sensitivity.

Fig. 5 illustrates the beam distribution with about 9 μ m light beam live widths.

Also known to such application, utilize for example excimer laser of inert gas halide laser instrument, wherein constitute the laser active material by intert-gas atoms and halide atoms (Cl, I, F etc.).In addition, rare gas halogenide laser, for example XeCl, XeF, KrF and ArF, be verified, and, as people such as J.J.Ewing at Phys.Rev.A12,129 (1975) and people such as M.Hoffman at Appl.Phys.Lett.9, pointed in 538 (1976), on the heavy crystallization of Si film, obtained effective utilization, comprise as the general type in those laser instruments that comprise XeF listed in list of references.List of references is also noted that for crystallization a-Si:H, is used such as a lot of excimer lasers of ArF (193nm), KrF (248nm), XeCl (308nm), XeF (351nm).Except other, XeCl quasi-molecule laser has good gas stabilization, is being the advantage of the high absorption coefficient of a-Si:H film under the situation of 308nm near wave number (wavenumber).Therefore, owing to stable operation with at the a-Si:H of 308nm place (～10 ⁶Cm ^-1) high absorption coefficient, a lot of companies adopt the XeCl laser instruments to produce.K.Lee, " A Study on Laser AnnealedPolycrystalline Silicon Thin Film Transistors (TFTs) with SiNx Gate Insulator (research) " with laser annealing polycrystalline SiTFT of SiNx gate insulator, chapter 4, " Experimental Details (experimental detail) " Http:// tftlcd.kyunghee.ac.kr/research/poly-Si/chapter4.html

" Excimer-Laser Crystallized Poly-Si TFT ' s with Transparent Gate (multi-crystal TFT) " (IEEE Transaction on Electron Devices (IEEE electronic device journal) of people such as C.Kim with excimer laser crystallization of transparent grid electrode, Vol.43, No.4 (in April, 1996), p.576-579) (be called for short " Kim ") radiation of XeF laser light be discussed be used on the glass lined bottom side of the amorphous silicon membrane on the glass composite (composite), in the non-crystalline silicon adjacent, to form polysilicon transparent grid electrode electrode with described glass substrate non-crystalline silicon interface.Also discussed and used this technology to form such transistor to be used for driver monolithic integrated circuit active matrix liquid crystal display (" AM-LCD ").Kim points out that the top side annealing of non-crystalline silicon finished by excimer laser, described excimer laser comprises XeCl and other, quote " High-performance TFT ' s fabricated by XeCl excimer laser annealing ofhydrogenated amorphous-silicon film (high performance TFT of making by the accurate laser annealing of XeCl of hydrogenated amorphous silicon film) " (IEEE Transaction on Electron Devices (IEEE electronic device journal) of people such as K.Sera, Vol.36, Np.12, (1989), pp.2868-72); " UV pulsed laser annealing of Si-implanted siliconfilm and low-temperature super thin-film transistors (the UV pulsed laser anneal and the low temperature ultrathin membrane transistor of the silicon fiml that silicon injects) " (J.Appl.Phys. of people such as Y.Morita, Vol.28, No.2 (1989) pp.L309-L311); " On-Chip bottom gate polysilicon and amorphous silicon thin-film transistors usingexcimer laser annealed silicon nitride gate (using the chip upper base grid polycrystalline silicon and the amorphous silicon film transistor of the silicon nitride gate of quasi-molecule laser annealing) " (Jpn.J.Appl.Phys. of people such as K.Shimizu, Vol.29, No.10 (1990), pp.L1775-L1777); " high-performance poly-si thin-film transistors withexcimer laser annealed silicon nitride gate (high-performance polycrystal silicon thin film transistor) " (Jpn.J.Appl.Phys. of people such as K.Shimizu with silicon nitride gate of quasi-molecule annealing, Vol.32, No.1B (1993), pp.452-57); " Bottom-gate poly-si thin film transistors using XeCl excimer laser and ion doping techniques (using the bottom-gate polycrystalline SiTFT of XeCl quasi-molecule laser annealing and ion doping technique) " (IEEETransaction on Electron Devices (IEEE electronic device journal) of people such as M.Furuta, Vol.40, No.14 (1993) pp.1964-69); And people such as Y.Sun " Excimer laser annealing process for polisilicon TFT AMLCDapplication (being used for the quasi-molecule laser annealing technology that multi-crystal TFT AMLCD uses) " (Record of 1994 Int.Disp.Res.Conf. (1994)), the disclosure of their each pieces is incorporated herein as quoting.Yet Kim is open and advise that only using XeF to pass the substrate radiation forms the clear bottom grid.

Known use has imaging passage intermediary image, that formed by lens in a row, every angular range that the passage imaging is limited wherein, wherein the superposition of part picture is finished by the space superposition (superpositioning) in the imaging plane, this require positive imaging and only with the superposition of next adjacent part, to avoid off-axis aberration (off-axis aberration).mstnews 2/03，http://www.suss-microoptics.com/downloads/Publication/Miniaturization_of_Imaging_Systems.pdf

Known use fly lens carries out the intensity redistribution of excimer pulsed laser beam, " Cyllindrical fly ' s eye lens for intensity redistribution of an excimer laser beam (the cylinder fly lens that is used for the intensity redistribution of excimer pulsed laser beam) " (Applied Optics as people such as Y.Ozaki, Vol.28, Issue 1 (in January, 1989) is p.106) and " A fly ' s eye condenser system for uniform illumination (the fly's eye concentrator systems that is used for uniform irradiation) " (Proc.of SPIE of people such as B.Crowther, International Optical Design Conference 2002, Vol. (2002) are discussed in pp.4832-35).

Summary of the invention

The surface of the work heating means and the equipment of a kind of high-energy, high-repetition-rate are disclosed, described surface of the work heating means and equipment can comprise: pulse XeF laser, described pulse XeF laser are operated in 4000Hz or are higher than 4000Hz and produce the laser output light pulse light beam in the about central wavelength of 351nm; Optical system, described optical system with described laser output light pulse light beam narrow on the short-axis direction of described laser output light pulse light beam less than 20 μ m, and with described laser output light pulse beam spread, on the long axis direction of described light beam, to form the workpiece that covers described major axis scope; Described optical system comprises the field stop between described laser instrument and described workpiece; Described workpiece comprises wants heated layer; Wherein said optical system focuses on field stop place with the magnifying power of enough keeping following intensity distributions with described laser output light pulse light beam, be that described intensity distributions has enough steep side, can on too high strength level 2, do not stop beam distribution keeping enough steep beam distribution on the workpiece to allow field stop.Described equipment also comprises when described laser output light pulse the beam Propagation high-average power in the described laser output light pulse light beam and the arc aligning gear of line in the minor axis optical module during to described workpiece.The arc aligning gear of described line comprises a plurality of weak cylinders that intersect.Described system can comprise the refraction and reflection projection system.Because laser diffraction and dispersing, described live width is less than how much restrictions.Described system can projection nominal XeF spectrum adjacent peak, improve overall depth of focus with the centre wavelength of the separation by each adjacent peak separately, described adjacent peak has different focal planes on described workpiece.Described system can be included in the field stop optical module and the arc aligning gear of line in the workpiece projection optics assembly, the arc aligning gear of line compensation line on described field stop plane in the described field stop optical module is arc, and the arc aligning gear of the line compensation line on described workpiece planarization in the described workpiece projection optics assembly is arc.

According to an aspect of the present invention, the surface of the work heating arrangements of a kind of high-energy, high-repetition-rate is provided, comprise: the pulse XeF laser, described pulse XeF laser is operated in 4000Hz or is higher than 4000Hz, and produces the laser output light pulse light beam in the central wavelength of about 351nm; Optical system, described optical system with described laser output light pulse light beam narrow on the short-axis direction of described laser output light pulse light beam less than 20 μ m, and with described laser output light pulse beam spread, on the long axis direction of described light beam, to form the workpiece coverage of described major axis; Described optical system comprises the field stop between described laser instrument and described workpiece; Described workpiece comprises wants heated layer; Wherein said optical system focuses on field stop place with the magnifying power of enough keeping following intensity distributions with described laser output light pulse light beam, be that described intensity distributions has enough steep side, can not stop described beam distribution at too high strength level to allow described field stop on workpiece, to keep enough steep beam distribution.

According to one embodiment of the invention, described surface of the work heating arrangements also comprises: in the described laser output light pulse light beam, and the high-average power when described laser output light pulse light beam is transferred to described workpiece.

According to another embodiment of the invention, described surface of the work heating arrangements also comprises: the minor axis optical module, described minor axis optical module comprises the arc aligning gear of line.Wherein, the arc aligning gear of described line comprises a plurality of weak cross column.

According to another embodiment of the invention, wherein, described optical system comprises the refraction and reflection projection system.

According to another embodiment of the invention, wherein, the adjacent peak of described optical system projection nominal XeF spectrum improves overall depth of focus with the centre wavelength of the separation by each adjacent peak separately, and described adjacent peak has different focal planes on described workpiece.

Brief Description Of Drawings

Fig. 1 illustrates the optical layout of expression optical system many aspects according to the many aspects of embodiment of the present invention;

Fig. 2 illustrates another view of the optical system of Fig. 1;

Fig. 3 illustrates and is used for not only amplifying light beam but also making up 30 at possible the lens of long axis direction extensible beam at short-axis direction;

Fig. 4 illustrates the embodiment of lens subassembly, and the light beam homogenization of carrying out on the major axis beam homogenizer is described;

Fig. 5 illustrates beam intensity;

Fig. 6 schematically shows illustrative pulse laser output beam generation system;

Fig. 7 schematically, partly illustrates system according to the many aspects of embodiment of the present invention;

Fig. 8 schematically shows the many aspects of embodiment of the present invention;

Fig. 9 schematically shows the many aspects of embodiment of the present invention;

Figure 10 a and Figure 10 b illustrate beam intensity;

Figure 11 illustrates beam intensity;

Figure 12 A and 12B illustrate beam intensity;

Figure 13 illustrates optical texture according to the many aspects of embodiment of the present invention.

The specific embodiment

The applicant has proposed to have the directed SLS system of the simple optical device that is used for crystallization and activation, described directed SLS system produces or can produce the crystal grain (grain) that prolongs Workpiece length in essence, causes the mobility (mobility) of 200-400 and the handling capacity of 35 (sheet) per hour.To the system that the applicant proposed, every maintenance expense is cheap more about 37% than JWS ELA system, and compares with the JWS system and to have energy or the insensitive process allowance of focus (margin).

For chip size is 370 * 470, applicant's proposition utilizes the ability of the part of light beam, described ability is for covering the workpiece sheet that comprises substrate with 365 * 0.02mm or littler elongated thin-beam in single pass, and with the elongated thin-beam of 730 * 0.02mm with the laser repetition rate of 4000Hz at least, for example 90% overlapping, the scanning step pitch of 0.002mm for example, the sweep length single sweep operation of 470mm covers 730 * 920 workpiece sheet, in preceding a kind of situation, can carry out every (sheet) 23500 crystallization irradiations (shot), crystallization time is 59 seconds, for every 43 seconds loses time, have 173, the irradiation of 200 wastes, and 35.38 handling capacity altogether 408 per hour just, 200 irradiations and actuation time of 102 seconds, and in a kind of situation in back, utilize similar data (except that for example 80% overlapping) use the whole 730mm width of single sweep operation emulsion sheet, cause 460,000 crystallization irradiation, 115 seconds crystallization time, to altogether 469,959 irradiations have the irradiation of 9,959 wastes, and 22.74 handling capacity per hour.In each case, even under the so low relatively speed of 4000Hz, about 45% raising is arranged than prior art also according to the accessible handling capacity of the many aspects of embodiment of the present invention.

Referring now to Fig. 6, schematically show illustrative pulse laser output beam generation system 160 according to the many aspects of embodiment of the present invention.System 160 can comprise oscillator laser system 162 and amplifier laser system 164.Pulse laser output beam generation system 160 can be configured to master oscillator, power amplifier system, wherein as known in the art, come that line is carried out in the output pulse 180 of oscilator system and narrow with for example line module (line narrowing module) or the line bag (line narrowing package) that narrows that narrows, or the pulse laser output beam to produce system 160 can be the power oscillator that does not wherein use line to narrow.For this application aims, the oscillator laser instrument of two kinds of forms can both be used, and is that master oscillator (MO) or power oscillator (PO) all are called as master oscillator (MO).As shown in Figure 6, MO can comprise unsteady resonator (resonator), described resonator comprises recessed speculum 170 and convex reflector 172, speculum 170 and 172 exemplarily is shown to be harmonized to from the axle oscillation form, thereby produces output beam 180 by the electrical discharge of 176 on the negative electrode 174 in the gas discharge chamber of oscillator laser system 162 and anode.

Output beam 180 is approximately 50mJ, and because the configuration of the unsteady resonator in oscillator chamber 162, it at least on an axle (for example on the trunnion axis) have low relatively divergence.This light beam 180 is reflexed in the gas discharge chamber of amplifier laser system 164 by the near completely reflecting mirror in the transfer optics 182, described amplifier laser system 164 can comprise that for example the applicant's assignee is with those power oscillators of XLA range of models sale as well-known repeatedly by (multi-pass) power oscillator in the MOPA laser system field.By the discharge between negative electrode in the gas discharge chamber of amplifier laser system 164 174 and the anode 176, the intensity of light beam 180 is exaggerated in amplifier laser system 164, to produce pulse laser output beam 190, described amplifier laser system 164 is timed to the due in of light beam 180.

Should be appreciated that laser system 164 can be for example to have once from what axle passed through repeatedly to pass through amplifier system.In addition, amplifier laser system 164 also can be an oscilator system, for example also is configured to the oscilator system in unsteady resonator chamber (cavity) or stabilizing cavity chamber, thereby amplifies input beam 180 as power oscillator in the resonator laser cavity.

Referring now to Fig. 7, system schematically, partly is shown according to the many aspects of embodiment of the present invention.Workpiece 130 can comprise a-Si 140 thin layers, described thin layer can scan with elongated thin-beam, described thin-beam for example with the direction of scanning direction quadrature on be approximately 365mm-730mm long (being that long enough is to cover workpiece 130 length that expectation covers on this yardstick), and have and for example do not want some processed border, shown in the embodiment of Fig. 7.Scanning on the scanning direction can be carried out as follows: according to the size of light beam 120, each pulse of pulse output laser beam covers a crystallization zone (for example 365mm * 5-20 μ m) with a step pitch (pitch), wherein said step pitch is used for guaranteeing that the lap in continuous crystallization zone is arrived by described light beam radiation in each pulse, except situation as discussed below, pulse can be skipped in the situation of described exception, for example intentionally to stop crystallization on some desired length, following new crystalline growth can begin in follow-up pulse.

For example, have the live width of 5 μ m, can select the step pitch of 3 μ m, then will provide and account for the overlapping of impulse line wide 40% greatly in the step pitch of pulse and interpulse described 3 μ m for each pulse on the scanning direction.

At the needed general 1J/cm of SLS on workpiece ²Energy density and the light beam of 730mm * 0.01mm, this will need 73nJ, and the transfer rate (transmission rate) of hypothesis from the laser instrument to the workbench be 705, then need 100mJ from laser instrument at least.The scanning step pitch of the light beam repetitive rate of 4KHz and for example 2 μ m/ pulses needs the workbench sweep speed of 2 μ m*4KHz=8mm/s.

Many aspects according to embodiment of the present invention, spatial beam intensity distributions (intensity profile) should be maintained sharp-pointed as much as possible, side (side wall) gradient that promptly distributes is: for the pulse width (FWHM) of 10 μ m, the side is from being less than .2 μ m between the intensity of about intensity to 90% of 10%, promptly gradient approximately＞9.If wherein beam distribution is steep inadequately,, then may there be the situation that crystallization area overall width changes on short lateral growth distance and the scanning direction because the energy density fluctuation causes crystallization zone (area) fluctuation.

Fig. 7 illustrates and may have such occasion, do not handle whole length of workpiece or width, for example before or after the crystallization zone of scanning at first, and after the crystallization zone of scanning in the end, or the edge beyond the longitudinal extent of the light beam that generally is orthogonal to the scanning direction, deliberately stay border 142 and do not handle in workpiece end.Use here, the four corner of term workpiece is meant, the scope of the expectation area coverage of workpiece for crystallization for example, with whether really to handle whole work-piece itself irrelevant, thereby many aspects for example according to the present invention form the crystallization of expecting with elongated thin-beam in desired workpiece part upper edge length and width in single pass.

Referring now to Fig. 8 and 9, beam Propagation useful according to the present invention and beam treatment system 200 are shown according to the many aspects of embodiment of the present invention.Described system can receive (take) pulse laser output beam 190, and by beam Propagation unit 208 and beam treatment unit 220 it is transferred to for example workpiece on workbench 204.Beam Propagation unit 208 can comprise beam stability metering module 206, and metering module 206 can be located and sensing by measuring beam, and beam energy, and controls for the revolving mirror (turning mirror) 210 among the BDU 208 provides active feedback.

Described system can comprise attenuator (attenuator) 202, and described attenuator 202 is operated in the FEEDBACK CONTROL, with for example about 5%-50% of light beam 190 decay, is used for the dosage control at workpiece 130 places on workbench 205.Attenuator 202 can comprise cooling unit 204.System 200 can also have beam stability metering module (" SMM ") 206 and beam stability control module 210 (" BSC ") 210.The output of BDU 208 is received by beam treatment module 220.

In the light path of light beam 190, beam attenuator 230 can also be arranged, can described attenuator 230 be inserted or withdraw the light path of light beam 190 in BDU 210 by handling solenoid (operatingsolenoid) 232.For example, beam attenuator 230 can be used to that at most decay is about 99% with light beam, measures with lower light beam power level in the downstream allowing.Handle the beam splitter 242 that solenoid 244 inserts by using by beam splitter in the light path of light beam 190, original beam distribution measurer (profiler) can be used to measure (profile) beam distribution near laser system 160.

Beam splitter 246 can be used to make the fraction of light beam 190 to redirect among the SMM206, just enters the beam treatment module at light beam 190 and puts before 220, in SMM 206 light beam 190 is measured.SMM can locate, point to (angle) and energy by monitoring light beam, and provide information about these parameters to BSC and/or master controller 208, described master controller comprises the computer processor of for example having programmed, and described computer processor of having programmed also can pass through network link (for example RS-422) and keep communicating by letter with energy-probe/controller 270 with laser system 160, BSC 210 and workpiece profile (workpiece profile).BSC can keep direct communication with laser instrument and attenuator, control and decay control to be used to carrying out outside laser instrument output energy, and BSC can also have to the output of pulse length monitor 260.

Before light beam 190 enters beam treatment module 220, by using, for example use the service aid of video camera (the camera of powermeter) measuring beam of power meter can manually be inserted in the light path of light beam 190 by the beam splitter 256 in the light path that can manually operated manipulation solenoid 254 be inserted into light beam 190.

System can also have nitrogen cleaning module (nitrogen purge module) 272, and described nitrogen cleaning module 272 can be used for purifying one or more in BDU 208 beam path, beam treatment module 220 and the workbench 205.

Safety sensor 274 can with N ₂Magnetic valve comes together to purify beam treatment module and/or workbench 205.

Shutter 248 can be placed on the light path of light beam 190, enters beam treatment module 220 to prevent light beam 190.

Under the situation that does not have active light beam stabilisation (for example FEEDBACK CONTROL in the rotation border 210 among the BDU 208), the beam-pointing drift may be very big, for example up to 100 to 200 μ rad.Yet, have under the situation of Stabilization Control, depart to be retained as the target that for example reaches about ± 25 μ rad, this can be independent of the influence of laser load cycle (duty cycle) and realize.Under the situation that does not have light beam parameters (for example pointing to and angle) active feedback control, may take place to depart from relatively fast, for example point to and depart from, this to small part be because load cycle changes, promptly reach about 200 μ rad, wherein for example have between (burst) ± change of 50 μ rad in burst.Should be appreciated that system 200 in operation can provide: with beam distribution and the metering and the control that provide in the form of the power of laser instrument outlet, the active beam drift (angle and location) that uses stabilisation metering module (SMM) to carry out is proofreaied and correct, be used for keeping the energy sensor feedback that whole light beam transmission, beam treatment and light beam utilize the energy stability of process, the profile that on the substrate on the workbench, carries out monitoring; Be used to optimize the light beam on the substrate on the workbench and be input to the distributed monitoring feedback of beam Propagation Optical devices; And from workbench and the energy watch-dog the SMM be input to the power monitoring feedback of laser instrument.

System can be with such parameter work: the active length of 920mm at least for example, if necessary, and live width resolution ratio＜0.05 μ m, folk prescription is to repeatability＜± 0.25 μ m, accuracy＜± 1 μ m, and～autofocus system of 20 μ m.

Many aspects according to embodiment of the present invention, SMM is used for that measuring beam points to and the location, and the controller (not shown) of having programmed among the BSC calculates beam-pointing and location rub-out signal separately, follows described rub-out signal and is used for controlling such as the such project of laser energy output, laser flip flop and attenuator 202 by master controller 280.As shown in Table I, for N.A. fixing on the workpiece, the reduction (reduction) that is produced in the system that is equal to changes.

Table I

Reduction

Parameter	5x	10x	20x
				The NA workpiece	0.170	0.170	0.170
Back focal length	100mm	100mm	100mm
				The NA mask	0.034	0.0170	0.0085
Minor axis efl	100mm	200mm	400mm
				The minor axis step pitch	700μm	700μm	700μm
The live width mask	110μm	220μm	440μm
				Live width geo.	22μm	22μm	22μm
Live width diff.	24μm	24μm	24μm
				Element number	～10	～10	～10
Length	～1700mm	～2200mm	～3200mm
				Mask size (energy density)	150mm×100μm (700mJ/cm 2)	150mm×200μm (350mJ/cm 2)	150mm×400μm (175mJ/cm 2)

According to many aspects of the present invention, caused knot (bowtie) effect, promptly in vertical end development of the light beam on the long axis direction of light beam of the beam spread on the short-axis direction of light beam.For the light beam of 5-20 μ m on the minor axis, in the end of light beam (for example ± 182.5mm place), for example 20 μ m increase for about 40 μ m between the 60 μ m.For live width on short-axis direction is the light beam of 400 μ m, and such beam spread is negligible.But according to the many aspects of embodiment of the present invention, this is unacceptable at about 2x to the growth of the light beam between the 12x (the light beam live width that depends on light beam major axis center).The breach LSF (splitLSF) that can have less line arc (line bow) effect.The light beam vertically performance of end worsens in several modes, comprises the live width growth on the major axis, the forfeiture of major axis uniformity (uniformity) and the forfeiture that overall efficiency (integrated efficiency) is gone up on mask (mask) plane (plane).According to the many aspects of embodiment of the present invention, this will make dosage, stability and the handling capacity at major axis uniformity, line end place exceed standard in elongated thin-beam ELA system.

This line is arc to be produced by two kinds of factors at least, and described two kinds of factors comprise the interaction (being that major axis generates and the interaction between the short-axis focusing on the mask plane) of skew ray between geometrical length and the light beam major and minor axis.The applicant proposes the arc influence of line by using synthetic " potato chips (potato chip) " lens to reduce not expect, described " potato chips " lens use weak (low-power) intersection cylindrical lens of output place that for example is positioned at minor axis thing Optical devices (field optic) differently to reflect described light beam according to the distance to the major axis center.It is believed that, other cause the arc factor of line is gradient in the unit of the gradient (obliquity) of minor axis reduction lens (reduction lens) and minor axis array, it is believed that these factors are correctable, or can reduce the influence of these factors at least with the opposite effect by the vignetting on the focus of minor axis (vignetting).

Heterogeneity also may be because the result of the caused speckle of interference (speckle) that light beam coherence (coherence) causes, the laser of more highly dispersing for not being subjected to the influence of this speckle and coherency issues does not just have such problem.Reduction (reduction) is the interference effect that can reach with Distributed Delay equipment (for example He Cheng " potato chips " lens).Distributed Delay equipment is known, and shown in " _ _ " (Application Optics, 1997), its disclosed content is included among this paper by reference as P.Dainesi.

The applicant proposes a kind of system, and wherein light beam is of a size of for example 365mm * 5-20 μ m on the workpiece, and the visual field is for example 18mm, and energy density is 400-1000mJ/cm under the situation of pulse stretching not having ², energy density is＞600mJ/cm under the pulse stretching situation ², and described system has the ability that operates to about 755 load cycle.In addition, system expection for example can have the reduction magnification between 0.13 the N.A. and 20 to 5, DOF＞± 10 μ m under 2.0 μ m L/S figures wherein, attenuator transmissivity (transmittance) is between 10% to 100%, and attenuator stability＜0.5% under the manual mode of operation.The present invention can also use and be of a size of for example 5 or 6 inches, the thickness mask as 120mil, manually or automatically (optionally) aims at, x, y, z axle moving range (travel) are 1160mm * 400mm * 1mm, resolution ratio is x=0.1 μ m, y=0.02 μ m, z=0.5 μ m, in whole moving range＜± 1.0 precision, and high to the about translational speed of 500mm/s.Also expection has 1.0 ° θ stroke (theta travel).Also expection has the pulse energy of 77mJ/ pulse at least, at least the repetitive rate of 4KHz, the power of 300W, the about 351nm of output wavelength, use the bimodal of XeF at about 351 places, the either side about 351 uses the secondary peak of XeF, the about 29 ± 5ns of pulse width (FWHM), for example two pulse spacings be approximately 100ns or 〉=the pulse width is 30ns during 200ns (FWHM), the gas life-span is about 40 * 10 ⁶Individual pulse or more.

In order to simplify the sampling of light beam, preferred linear polarization.The width of light beam that enters first homogenizer (homogenizer) is contemplated to 30mm * 30mm, wherein light beam is near restricted diffraction on the short-axis direction of light beam, for example in order to obtain 10 μ m light beams on the workpiece, and because the beam stability of the spatial coherence that the damage (spoiling) on the minor axis causes and ± 2% satisfies for example 15% uniformity target on 150mJ.

At sweep length 0.01mm, sweep length 730mm, overlapping on the sweep length direction is under the situation of 75%-80% of live width, expection beam Propagation unit transmission percentage (transmission percentage) be 72.30% and pulse stretcher burst transmissions percentage be 65.36%.This can reach with the least energy with 154mJ for example, the laser instrument that power is 618w.

Expection depth of focus＞100 μ m (± 50 μ m), image field curvature (image field curvature)＜20 μ m (± 10 μ m), on major axis light beam homogeneity (homogeneity)＜10% (± 5%) and＜5% (± 2.5%), light beam steepness (steepness)＜10 μ m (10%-90%).Should be appreciated that applicant in operation has solved performance-relevant two key issues with suitable SLS with elongated thin-beam, for example horizontal light beam is dispersed, and this problem is to be 0.15mrad@1/e with for example target ²Low-power intersect cylindrical lens and be used for that low divergence incipient beam of light from laser instrument solves, this be convenient to reach needed on substrate the spot size of 10 to 20 m, and the horizontal light beam sensing of keeping horizontal gradient＜10 m (i.e. 50 μ rad), described horizontal light beam points to by for example carry out the active optical beam manipulation fast in BDU and reaches.

Figure 10 A illustrates the many aspects according to embodiment of the present invention, be transferred to the embodiment of the intensity distributions on the short-axis direction of light beam on mask plane, it is 0.02 μ m that this embodiment illustrates from 10% to 90% side gradient, and the light beam live width is about 130 μ m FWHM.Figure 1B illustrates light beam by field stop slit (mask) finishing/cut-out, has about 100 μ m FWHM and from 10% to 90% side gradient is the light beam of 0.01 μ m to form in the mask source.Figure 11 illustrates the pulsed light beam width of imaging on the workpiece minor axis, and it for example has at 90% place＜width of 20 μ m, the gradient of Δ I/ Δ x＜7 μ m, and Δ I＜5%.

Figure 12 A illustrates the embodiment with light beam that knot shape lateral beam width disperses, and Figure 12 B illustrates the described light beam that is removed of dispersing according to the many aspects of embodiment of the present invention.

Figure 13 illustrates according to the many aspects of embodiment of the present invention and comprises that the knot shape disperses the optical system of calibrating optical parts (element).

According to many aspects of the present invention, XeF is a kind of suitable laser system, because the centre wavelength about 351nm remains in the low-down zone at the reflectivity of silicon for setted wavelength, and thereupon for this wavelength absorptivity very high, yet absorptivity drops to such level apace for the wavelength of being longer than this wavelength greatly, and promptly the required energy that is transferred to workpiece is difficult to reach under this level.In addition, 351nm is in the scope of DUV, optical element damage factor can expensively satisfy more easily and in this scope, yet, particularly under so high pulse recurrence rate, drop to lower nominal wavelength (for example for KrF 248), may cause optical damage to avoid satisfying of factor to want much much more difficult and expensive.

The applicant also has realized that the benefit of placing the way of minor axis Optical devices in the optical train between laser instrument and workpiece, before the major axis Optical devices.

According to many aspects of the present invention, the live width LW on the minor axis _Vert=p _vf _s[(f ₁+ f ₂)-α, wherein p _vBe the width of independent cylindrical lens on minor axis that for example forms every passage in the homogenizer, α is the distance between first group of lens forming along the such cylindrical lens on the optical path and the second group of lens, f _sRelevant with the focus optics of minor axis homogenizer.LW on workpiece is LW _Wp(RED ") multiply by LW to equal degree of reduction _VertLWIFF+244 λ (f/ slit aperture)=244 λ (F _Short/ p _vIn addition, the LW of mask _DIFFBe substantially equal to RED (LW _DIFF).Live width divergence LW _DIFFBe substantially equal to the f of system _S1Multiply by the minor axis divergence θ of laser beam _sThe f of the system of each passage _S1=(f ₁/ f ₂) * f _{Minor axis}* RED for example 50/45 multiply by 100mm and multiply by 1/5X, so LW _DIV=20mm * 0.0001 or 2 μ m roughly.Tandem lens f ₁And f ₂Be look in the distance with collimating effect.For some control constant equation, for example J=RED LW _V+ LW _DIFF=LW _DIV, J can be at some system restrictions (p for example _vAnd f _s) and be minimized.Divergence θ _S1Equal the θ of laser instrument _{Minor axis}Multiply by (the W of laser instrument _L/ W _SThese work in laser divergence or coherence any or both throw into question always.Do not satisfy α＜f ₁+ f ₂, then in adjacency channel, may crosstalk (cross talk), this causes the band (strip) in the image on the workpiece for example.In addition, can adjust f ₁And f ₂Control the uniformity and the side gradient (sidewall slope) of field stop place, and uniformity and the side gradient of controlling the workpiece place thus.Edge blurry on the lateral vertical side (blur) is the function of geometrical aberration and laser divergence.

According to many aspects of the present invention, the applicant proposes to provide elongate light beam to workpiece, and the live width of hundreds of μ m forms contrast in described elongate light beam and this area.Still according to the many aspects of embodiment of the present invention, the applicant proposes major axis array cover is got up.

According to many aspects of the present invention, the surface of the work heating arrangements of high-energy, high-repetition-rate is provided, described mechanism comprises: pulse XeF laser, described pulse XeF laser are operated in 4000Hz or are higher than 4000Hz and produce the laser output light pulse light beam in the about central wavelength of 351nm; Optical system, described optical system with described laser output light pulse light beam narrow on the minor axis of laser output light pulse light beam less than 20 μ m, and with described laser output light pulse beam spread, to form the workpiece that covers described major axis scope on the long axis direction of light beam, described scope is 370mm or 930mm; Described optical system comprises the field stop between laser instrument and workpiece; Described workpiece comprises wants heated layer; Wherein said optical system focuses on field stop place with the magnifying power of enough keeping following intensity distributions with the laser output light pulse light beam, described intensity distributions has enough steep side, to allow field stop can on too high strength level, not stop beam distribution keeping enough steep beam distribution on the workpiece, for example finishing or cut off beam distribution on about 5-10% strength level, with in this area at the FWHM place or opposite on FWHM.

Claims (6)

1. the surface of the work heating arrangements of a high-energy, high-repetition-rate comprises:

The pulse XeF laser, described pulse XeF laser is operated in 4000Hz or is higher than 4000Hz, and produces the laser output light pulse light beam in the central wavelength of about 351nm;

Optical system, described optical system with described laser output light pulse light beam narrow on the short-axis direction of described laser output light pulse light beam less than 20 μ m, and with described laser output light pulse beam spread, on the long axis direction of described light beam, to form the workpiece coverage of described major axis;

Described optical system comprises the field stop between described laser instrument and described workpiece;

Described workpiece comprises wants heated layer;

Wherein said optical system focuses on field stop place with the magnifying power of enough keeping following intensity distributions with described laser output light pulse light beam, be that described intensity distributions has enough steep side, can not stop described beam distribution at too high strength level to allow described field stop on workpiece, to keep enough steep beam distribution.

2. surface of the work heating arrangements as claimed in claim 1 also comprises:

In the described laser output light pulse light beam, the high-average power when described laser output light pulse light beam is transferred to described workpiece.

3. surface of the work heating arrangements as claimed in claim 1 also comprises:

The minor axis optical module, described minor axis optical module comprises the arc aligning gear of line.

4. surface of the work heating arrangements as claimed in claim 3, wherein:

The arc aligning gear of described line comprises a plurality of weak cross column.

5. surface of the work heating arrangements as claimed in claim 1, wherein:

Described optical system comprises the refraction and reflection projection system.

6. surface of the work heating arrangements as claimed in claim 1, wherein:

The adjacent peak of described optical system projection nominal XeF spectrum improves overall depth of focus with the centre wavelength of the separation by each adjacent peak separately, and described adjacent peak has different focal planes on described workpiece.

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