CN101928932A - The laser process equipment of may command laser beam length and intensity - Google Patents
The laser process equipment of may command laser beam length and intensity Download PDFInfo
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- CN101928932A CN101928932A CN2010101968859A CN201010196885A CN101928932A CN 101928932 A CN101928932 A CN 101928932A CN 2010101968859 A CN2010101968859 A CN 2010101968859A CN 201010196885 A CN201010196885 A CN 201010196885A CN 101928932 A CN101928932 A CN 101928932A
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010453 quartz Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 238000009434 installation Methods 0.000 claims abstract description 3
- 238000010521 absorption reaction Methods 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract 1
- 239000003507 refrigerant Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004941 influx Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
- B23K26/3584—Increasing rugosity, e.g. roughening
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
- B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Semiconductors (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention relates to a kind of laser process equipment, possess: the reaction chamber that quartz window also is installed up at inner installation base plate; Be installed on the outside of reaction chamber, be located at the top of quartz window, and with curtain shape laser beam irradiation in the laser aid of substrate; Be installed between laser aid and the quartz window, and the side of isolation laser bundle, move for making, and in the two ends of laser beam, be installed on the light beam isolating means of an end at least along the vertical equity of laser beam.The photodetector of feedback means is accepted by light beam isolating means laser light reflected bundle, and feeds back to laser aid after measuring its intensity, thus the laser beam intensity of control laser aid output.According to the present invention, may command is incident in the laser beam length of substrate, and can also control intensity of laser beam in implementation process in real time.
Description
Technical field
The present invention relates to a kind of laser process equipment, its equipment is used to adopt the annealing of polysilicon (Polycrystalline silicon) of induced with laser chemical vapour deposition or laser etc., relates in particular to a kind of laser process equipment of length and intensity of may command laser beam.
Background technology
When making semi-conductor, FPD and solar cell (solar cell) etc., if plated film (depositing thin-film) under the condition of high temperature, can be because of thermal chemical reaction (Thermochemical reaction), cause reactor (Reactor) contaminated or produce unnecessary problems such as compound.Therefore, adopt induced with laser PCVD etc., realizing plated film under the low temperature.
In addition, when, behind plated film, annealing (annealing) along with the maximization of substrate,, constantly releasing various counte-rplan owing to be difficult to guarantee its homogeneity.Wherein a kind of is exactly the method for annealing that adopts laser.
Fig. 1 is existing laser process equipment synoptic diagram.As Fig. 1, reaction chamber (10) possesses reaction gas (Reactiongas) and flows out inlet (11a, 11b), and quartz window (20) is equipped with at its top, and laser aid (40) then is equipped with in the top of quartz window (20).The laser beam of irradiation sees through the substrate (30) in quartz window (20) the arrival reaction chamber (10) in laser aid (40).
Fig. 2 is laser beam (41) the form synoptic diagram of Fig. 1 from laser aid (40) irradiation.As shown in Figure 2, vertical or light grade (Gradient) state exposes to substrate (30) to laser beam (41) with curtain shape (Curtain).Substrate (30) laser beam (41) face relatively moves horizontally with the direction of arrow, thereby realizes that laser beam (41) shines in the front of substrate (30).Fig. 2 (a) is a substrate synoptic diagram from top to bottom, and Fig. 2 (b) is the oblique drawing of substrate.
But, as shown in Figure 3, because substrate (30) comprises the element field (32) of direct formation element and does not form the periphery (31) of element, therefore need control laser beam (41) not shine periphery (31), in addition, diffraction phenomena may appear in part at the edge of laser beam (41) (Edge), therefore should consider this problem in construction process.Though need control laser beam (41) length, conventional art can not be controlled laser beam (41) length, and, though wish in engineering, to pass through the intensity of feedback control laser beam (41), can there are not suitable means again.
Summary of the invention
[needing the problem of solution]
Therefore, the problem that the present invention need solve is, for improving laser processing efficient, provides the laser process equipment of the length and the intensity of may command laser beam.
[problem solution]
The present invention relates to a kind of laser process equipment, it is characterized in that, possess: the reaction chamber that quartz window also is installed up at inner installation base plate; Be installed on the outside of above-mentioned reaction chamber, be located at the top of above-mentioned quartz window, and with curtain shape (Curtain) laser beam irradiation in the laser aid of aforesaid substrate; Be installed between above-mentioned laser aid and the above-mentioned quartz window, and isolate the side of above-mentioned laser beam, move, in the two ends of above-mentioned laser beam, be installed on the light beam isolating means of an end at least for making along the vertical equity of above-mentioned laser beam.
Feedback (feedback) means are installed again, and above-mentioned light beam isolating means is installed obliquely for the direction of illumination of above-mentioned laser beam on the superjacent air space of above-mentioned light beam isolating means, and its top there is the plane of reflection that reflexes to the top; Above-mentioned feedback (feedback) means, to go up the beam intensity feedback of measuring (feedback) at above-mentioned photodetector (photodetector) and give above-mentioned laser equipment, measure its intensity after making input according to above-mentioned light beam isolating means laser light reflected bundle, therefore the laser beam intensity of exporting from above-mentioned laser equipment is controlled in suggestion.
At this moment, above-mentioned photodetector (photodetector) can be loaded on the bottom appointed part of feedback (feedback) means; And do not install this moment on the bottom remainder of above-mentioned feedback (feedback) means of above-mentioned photodetector (photodetector), the beam absorption means are installed in suggestion.Above-mentioned beam absorption means can form by the bottom that annular knurl (knurling) process above-mentioned feedback (feedback) means.In addition, also can possess the driving part of adjusting above-mentioned beam absorption means position and angle again.
[effect]
According to the present invention, can control the laser beam length that is incident in substrate.In addition, also can control intensity of laser beam in real time in the construction process.
Description of drawings
Fig. 1 is existing laser process equipment synoptic diagram.
Fig. 2 is laser beam (41) the form synoptic diagram of Fig. 1.
Fig. 3 is existing laser process equipment problem synoptic diagram.
Fig. 4 is the part normal section synoptic diagram of laser process equipment of the present invention.
Fig. 5 is the partial cross section oblique drawing of Fig. 4 of the present invention along the laser process equipment of A-A ' direction.
Fig. 6 is the sound plane sketch chart of light beam isolating means of the present invention (50).
Fig. 7,8 and Fig. 9 be that the present invention feeds back (feedback) means (60) synoptic diagram.
The nomenclature of＜accompanying drawing major portion 〉
10: reaction chamber 11a, 11b: reaction gas (Reaction gas) flows out inlet
20: quartz window 30: substrate
31: periphery 32: the element field
40: laser aid 41: laser beam
50: light beam isolating means 60: feedback (feedback) means
61: photodetector (photodetector) 62: beam absorption means
63a, 63b: refrigerant (Refrigerant) influx
Embodiment
Following with reference to accompanying drawing, explain the preferred embodiments of the present invention.Following embodiment just provides in order to understand content of the present invention.If the professional in this field then can be in technical more changes that are able to inwardly of the present invention.Therefore, interest field of the present invention can not be interpreted as being subject to these embodiment.
Fig. 4 is the part normal section synoptic diagram of laser process equipment of the present invention; Fig. 5 is the partial cross section oblique drawing of Fig. 4 along A-A ' direction.In addition, Fig. 6 is the sound plane sketch chart of light beam isolating means (50).
As Fig. 4 and Fig. 5, light beam isolating means (50) will be located between laser aid (40) and the quartz window (20), and as shown in Figure 6, light beam isolating means (50) will be isolated the two ends while of curtain shape (Curtain) laser beam (41), be located at the two ends of laser beam (41) respectively, allow to move horizontally with the lateral arrows direction of laser beam (41).Therefore, will determine to move, and shine in the useful length of the laser beam (41) of substrate (30) according to the transverse horizontal of light beam isolating means (50) with laser beam.Here, laser aid (40) expression includes the control LASER Light Source and at the losser of the laser beam intensity of this appearance.
Light beam isolating means (50) has not only been isolated laser beam (41), also is provided with plane of reflection for reflexing to its top, and installs obliquely by the direction of illumination of laser beam (41).At this moment, if form plane of reflection with reflectance coating, the problem of rotten or structural changes can take place in laser beam (41) when making an addition on the reflectance coating, and therefore, suggestion uses the method for lubricious ground processing treatment light beam isolating means (50) material face to make plane of reflection.
Among Fig. 4 and Fig. 5,, one of only illustrate in the light beam isolating means (50) of being located at two ends for clear and definite diagram; And refrigerant (Refrigerant) influx (63a) and refrigerant (Refrigerant) spout (63b) synoptic diagram of feedback (feedback) means (60) have been omitted.
By light beam isolating means (50) laser light reflected bundle (41), incide on the photodetector (photodetector) (61) that is installed on feedback (feedback) means (60) bottom.Fig. 7 is the fish-eye view of feedback (feedback) means (60) bottom, and has generally shown the structure that looks up with the arrow A direction.After feedback (feedback) means (60), control were measured the laser beam intensity of input with photodetector (photodetector) (61), feedback (feedback) was given the laser beam intensity of laser aid (40) and output in laser aid (40).
In order to prevent laser beam (41), beam absorption means (62) are installed on every side at photodetector (photodetector) (61) because feedback (feedback) means (60) are incident in substrate (30) direction after reflecting once more and construction is impacted.Beam absorption means (62) will photodetector (photodetector) (61) around be processed as concaveconvex shape and realize, for example can annular knurl processing or be processed as gear shape.In addition, also can by processing make electric explorer (photodetector) around have rake and be achieved.As above-mentioned, shown working position among Fig. 7 for beam absorption with oblique line.Fig. 8 is the sectional view according to Fig. 7 B-B ' line, with reference to this figure as can be seen the surface be the rake of concavo-convex processing, and formed beam absorption means (62).
For the temperature of feedback (feedback) means (60) that prevent to be caused by the laser beam that beam absorption means (62) absorb rises, as shown in Figure 9, there is refrigerant the top of beam absorption means (62), for example, refrigerant (Refrigerant) is set on feedback (feedback) means (60) flows into (63a), refrigerant (Refrigerant) spout (63b), N2 gas is flowed along with refrigerant (Refrigerant) stream (65).Refrigerant among Fig. 9 (Refrigerant) flows into (65) and is shown as linear pattern, but also can be case of bending in order to improve cooling performance in fact.In addition, a side of beam absorption means (62) is extending the connection section (67) that is connected the driving part (70) of adjusting position and angle, thereby, can adjust the last lower angle that (C direction) and level attitude move (D and E direction) beam absorption means (62).Therefore, can be incident on the beam absorption means (62) by last laser light reflected bundle angle of light beam isolating means (50) and position.
As mentioned above, can control laser beam (41) length that is incident in substrate (30) according to the present invention; In addition, after the intensity of enforcement input laser beam (41), give laser equipment (40), also can control in real time thereby make in the construction process of laser beam (41) intensity with its feedback (feedback).
Claims (8)
1. a laser process equipment is characterized in that possessing: the reaction chamber that quartz window also is installed up at inner installation base plate; Be installed on the outside of above-mentioned reaction chamber, be located at the top of above-mentioned quartz window, and with curtain shape laser beam irradiation in the laser aid of aforesaid substrate; Be installed between above-mentioned laser aid and the above-mentioned quartz window, and isolate the side of above-mentioned laser beam, move, in the two ends of above-mentioned laser beam, be installed on the light beam isolating means of an end at least for making along the vertical equity of above-mentioned laser beam.
2. laser process equipment according to claim 1 is characterized in that, feedback means is installed on the superjacent air space of above-mentioned light beam isolating means again; And above-mentioned light beam isolating means is installed obliquely for the direction of illumination of above-mentioned laser beam, and there is the plane of reflection of reflection top its top; Above-mentioned feedback means, the beam intensity that to measure on above-mentioned photodetector feeds back to above-mentioned laser equipment, measure its intensity after making input according to above-mentioned light beam isolating means laser light reflected bundle, therefore the laser beam intensity of exporting from above-mentioned laser equipment is controlled in suggestion.
3. laser process equipment according to claim 2 is characterized in that above-mentioned photodetector is installed in the bottom of above-mentioned feedback means; At the above-mentioned feedback means bottom remainder that above-mentioned photodetector is not installed the beam absorption means are installed.
4. laser process equipment according to claim 3 is characterized in that, the above-mentioned feedback means bottom remainder that above-mentioned beam absorption means will not installed above-mentioned photodetector is processed into concaveconvex shape.
5. laser process equipment according to claim 4 is characterized in that, is processed into above-mentioned concaveconvex shape, comprises annular knurl processing or spination processing.
6. according to claim 3 or 4 described laser process equipments, it is characterized in that,, the beam absorption means have been processed into the scarp in that the above-mentioned feedback means bottom remainder of above-mentioned photodetector is not installed.
7. laser process equipment according to claim 3 is characterized in that, for cooling off above-mentioned beam absorption means, forms cooling flowing path at above-mentioned feedback means.
8. laser process equipment according to claim 3 is characterized in that, the driving parts that possess above-mentioned beam absorption means position of adjustment and angle more.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0057079 | 2009-06-25 | ||
| KR1020090057079A KR101089624B1 (en) | 2009-06-25 | 2009-06-25 | Laser processing apparatus which can control length and intensity of laser beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101928932A true CN101928932A (en) | 2010-12-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101968859A Pending CN101928932A (en) | 2009-06-25 | 2010-06-10 | The laser process equipment of may command laser beam length and intensity |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101089624B1 (en) |
| CN (1) | CN101928932A (en) |
| TW (1) | TWI395631B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752278A (en) * | 2013-12-27 | 2015-07-01 | Ap系统股份有限公司 | Apparatus for irradiating light |
| CN107150181A (en) * | 2016-03-03 | 2017-09-12 | Ap系统股份有限公司 | Quasi-molecule laser annealing process laser beam adjustment module |
| CN113227443A (en) * | 2018-10-31 | 2021-08-06 | 马克斯·普朗克科学促进学会 | Coating apparatus, process chamber and method of coating a substrate and substrate coated with at least one material layer |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101510772B1 (en) * | 2013-12-27 | 2015-04-10 | 에이피시스템 주식회사 | Apparatus for irradiating light |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1564312A (en) * | 2004-03-18 | 2005-01-12 | 友达光电股份有限公司 | Laser annealing appts. and its tech |
| CN1886872A (en) * | 2003-11-26 | 2006-12-27 | Tcz股份有限公司 | Laser thin film poly-silicon annealing system |
| KR100780291B1 (en) * | 2006-11-06 | 2007-11-29 | 코닉시스템 주식회사 | Laser annealing device |
-
2009
- 2009-06-25 KR KR1020090057079A patent/KR101089624B1/en active IP Right Grant
-
2010
- 2010-06-10 CN CN2010101968859A patent/CN101928932A/en active Pending
- 2010-06-11 TW TW099119025A patent/TWI395631B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1886872A (en) * | 2003-11-26 | 2006-12-27 | Tcz股份有限公司 | Laser thin film poly-silicon annealing system |
| CN1564312A (en) * | 2004-03-18 | 2005-01-12 | 友达光电股份有限公司 | Laser annealing appts. and its tech |
| KR100780291B1 (en) * | 2006-11-06 | 2007-11-29 | 코닉시스템 주식회사 | Laser annealing device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752278A (en) * | 2013-12-27 | 2015-07-01 | Ap系统股份有限公司 | Apparatus for irradiating light |
| CN104752278B (en) * | 2013-12-27 | 2017-10-03 | Ap系统股份有限公司 | Light irradiating device |
| CN107150181A (en) * | 2016-03-03 | 2017-09-12 | Ap系统股份有限公司 | Quasi-molecule laser annealing process laser beam adjustment module |
| CN107150181B (en) * | 2016-03-03 | 2021-11-26 | Ap系统股份有限公司 | Laser beam adjusting module for excimer laser annealing process |
| CN113227443A (en) * | 2018-10-31 | 2021-08-06 | 马克斯·普朗克科学促进学会 | Coating apparatus, process chamber and method of coating a substrate and substrate coated with at least one material layer |
| CN113227443B (en) * | 2018-10-31 | 2024-03-15 | 马克斯·普朗克科学促进学会 | Coating device, process chamber and method for coating a substrate, and substrate coated with at least one material layer |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100138509A (en) | 2010-12-31 |
| KR101089624B1 (en) | 2011-12-06 |
| TW201105448A (en) | 2011-02-16 |
| TWI395631B (en) | 2013-05-11 |
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