TW201105448A - Laser processing equipment capable of controlling laser beam length and strength - Google Patents

Laser processing equipment capable of controlling laser beam length and strength Download PDF

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TW201105448A
TW201105448A TW099119025A TW99119025A TW201105448A TW 201105448 A TW201105448 A TW 201105448A TW 099119025 A TW099119025 A TW 099119025A TW 99119025 A TW99119025 A TW 99119025A TW 201105448 A TW201105448 A TW 201105448A
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laser
laser beam
feedback
processing apparatus
photodetector
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TW099119025A
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TWI395631B (en
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Shang-Oh Kim
Jong-Myong Kim
Sung-Hwan Baek
Sung-Jin Kim
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Ap Systems Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3584—Increasing rugosity, e.g. roughening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • C—CHEMISTRY; METALLURGY
    • C21—METALLURGY OF IRON
    • C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/26—Methods of annealing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thermal Sciences (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

This invention relates to laser processing equipment characterized by comprising: a reaction chamber (10) with a substrate (30) disposed therein and a quartz window (20) disposed thereabove; a laser device (40) disposed at the exterior of the reaction chamber (10) and on top of the quartz window (20) for irradiating curtain-shaped laser beam (41) onto the substrate (30); and light beam isolation means (50) disposed between the laser device (40) and the quartz window (20) to isolate the lateral side of the laser beam (41) and disposed at least at one end of the two ends of the laser beam (41) to allow longitudinal horizontal movement of the laser beam (41). The photodetector of feedback means (60) receives the laser beam (41) reflected by the light beam isolation means (50) and feedbacks to the laser device (40) after measuring its strength, thereby controlling the laser beam strength outputted by the laser device (40). According to the present invention, the length of the laser beam (41) impinged on the substrate (30) is controlled, and the strength of the laser beam (41) can be controlled in real time during implementation.

Description

201105448 六、發明說明： 【發明所屬之技術領域】 本發明有關一種鐳射加工設備，其設備用於採用鐳射 誘導化學氣相沉積或鐳射的多晶矽（Polycrystalline silicon)等的退火，尤其有關一種可控制雷射光束的長度 及強度的鐳射加工設備。 【先前技術】 在製造半導體、FPD及太陽能電池（s〇iarceii)等時， 若在高溫狀態下鍍膜（depositing thin-film)，會因熱化 學反應（Thermochemical react ion)，造成反应器（React〇r) 被污染或產生不必要的化合物等諸多問題。因此，正在採 用鐳射誘導等離子化學氣相沉積等，實現低溫下鍍膜。 另外，隨著基板的大型化，在鍍膜後進行退火 (anneal ing)時’由於很難確保其均勻性，正在不斷推出各 種應對方案。其中的一種就是採用鐳射的退火方法。 圖1是現有鐳射加工設備示意圖。如圖卜反應室（10) 包括反應氣（Reaction gas)流出入口（ 1 la、1 ib)，其頂 部裝有石英窗（20)，而石英窗（20)的上方則裝有鐳射 裝置（40 )。在鐳射裝置（40 )中照射的雷射光束透過石 英窗（20)到達反應室（1〇)内的基板（30)。 圖2是圖1從鐳射裝置（40 )照射的雷射光束（41 ) 形態示意圖。如圖2所示，雷射光束（41 )以簾狀（Curtain) 垂直或小坡度（Gradi ent)狀態照射至基板（3〇 )。基板（3〇 ) 3 201105448 相對雷射光束（41 )面以箭頭方向水平移動，從而實現雷 射光束（41 )照射於基板（3 0 )的前面。圖2 (a)是從上往 下的基板示意圖，圖2(b)是基板的立體圖。 但是’如圖3所示’由於基板（30)包括直接形成元 件的元件領域（32 )和不形成元件的周邊部（31 )，因此 需控制雷射光束（41 )不照射到周邊部（31 )，另外，在 雷射光束（41 )的邊緣（Edge)部分可能會出現衍射現象， 因此應在施工過程中考慮該問題。雖然需要控制雷射光束 (41 )長度’但傳統技術卻不能控制雷射光束（41 )長度， 而且，雖然希望在工程中通過反饋控制雷射光束（41)的 強度’可又沒有適當的手段。 【發明内容】 【需解決的課題】 因此，本發明需解決的課題在於，為提高鐳射加工交 率，提供可控制雷射光束的長度及強度的鐳射加工設備。 【課題解決方法】 本發明有關一種鐳射加工設備，其特徵在於包括：在户 部安裝基板並在上方安裝石英窗的反應室；安裝於上述石 應室的外部，使其位於上述石英窗的頂部，並將簾法 (Curtain)雷射光束照射於上述基板的鐳射裝置；安裝方 上述錯射裝置和上iii石i t + pq Xi 不上述；&央固之間，並隔離上述 側面’為使沿著上述雷射光束的縱向水平移動，在上述售 201105448 射光束的兩端中至少安裝於一端的光束隔離手段。 在上述光束隔離手段的上方空間上再安裝反饋 (feedback)手段，而上述光束隔離手段，對於上述雷射光 束的照射方向傾斜地安裝’並且其上方有反射至上方的反 射面；上述反饋（feedback)手段，將在上述光電探測器 (photodetector)上測量的光束強度反饋（feedback)給上 述鐳射設備，使輸入根據上述光束隔離手段反射的雷射光 束後測量其強度，因此建議控制從上述錯射設備上輸出的 β 射光束強度。 此時，上述光電探測器（ph〇t〇detect〇r)可裝於反饋 (feedback)手段的底部指定部位；而此時未安裝上述光電 探測器（ph〇t〇detector)的上述反饋（feedback)手段的底 部剩餘部分上’建議安裝光束吸收手段。上述光束吸收手 段，可以通過滚扣卩k n „ ^ ·、， 化（knurling)加工上述反饋（feedback) 手段的底部形成。另& , ^ 另外’也可以再包括調整上述光束吸收 φ 手段位置及角度的驅動部。 【效果】 根據本發明，¥ 了以控制入射於基板的雷射光束長度。 另外，施工過程中爲脸 也將可以即時控制雷射光束的強度。 【實施方式】 以下參照附圖，·^ 4 u μ 坪細地說明本發明的優選實施例。如 下實施例，只异氣 /、 〜了理解本發明的内容而提供。若是該領 域的專業人員，貞彳γ J以在本發明的技術性思想上得以更多 201105448 改變。因此，不可將本發明的權利範圍解釋為受限於這些 實施例。 圖4是本發明鐳射加工設備的部分正剖面示意圖；圖 5是圖4沿A-A’方向的部分剖面立體圖。另外，圖6是光 束隔離手段（50)的動靜平面概略圖。 如圖4及圖5 ’光束隔離手段（50 )將設於鐳射裝置 (40)和石英窗（20)之間’並如圖6所示，光束隔離手 段（50)將隔離簾狀（Curtain)雷射光束（41 )的兩端同時， 为別ax於雷射光束（41)的兩端，使能夠以雷射光束（41) 的橫向箭頭方向水平移動。因此，將確定根據光束隔離手 段（50 )以雷射光束的橫向水平移動，並照射於基板（3〇 ) 的雷射光束（41)的有效長度。在這裏，鐳射裝置（4〇) 表示均包括控制鐳射光源及在此出現的雷射光束強度的衰 減器。 光束隔離手段（50)不僅隔離了雷射光束（41)，為 反射至其上方還設有反射面，並按雷射光束（41)的照射 方向傾斜地安裝。此時，如果以反射塗層形成反射面，雷 射光束（41 )添加于反射塗層上時會發生變質或結構變化 的問題’因此’建議使用滑潤地加工處理光束隔離手段（5 〇 ) 材質面的方法製作反射面。 圖4及圖5中’為了明確圖示，只圖示了設於兩端的 光束隔離手段（50)中之一；而省略了反饋（feedback)手 段（60 )的冷媒（Refrigerant)流入口 （ 63a )及冷媒 (Refrigerant)流出口（ 63b)示意圖。 201105448 通過光束隔離手段（50)反射的雷射光束，人 射到安裝於反饋（feedback)手段（60)底部的光電探測器 (photodetector)( 61 )上。圖 7 是反饋（feedback)手段（6〇 ) 底部的底視圖，並大致地顯示了以箭頭A方向向上看的於 構。反饋（feedback)手段（60 )’控制以光電探測器 (photodetector) ( 61 )測量輸入的雷射光束強度後，反饋 (feedback)給鐳射裝置（40)並在鐳射裝置中輸出 的雷射光束強度。 為了防止雷射光束（41 )由於反饋（feedback)手段（6〇) 再次反射後入射於基板（30)方向並對施工造成影塑，在 光電探測器（photodetector) ( 61 )周圍安裝光束吸收手段 (62)。光束吸收手段（62)將光電探測器（ph〇t〇detect〇r) (61 )的周圍加工為凹凸形狀並實現，例如可以滾花加工 或加工為齒輪形狀。另外，也可以通過加工使電探測器 (photodetector)的周圍帶有傾斜部並予以實現。圖？中如 鲁 同上述’用斜線顯示了為了光束吸收的加工部位。圖8是 根據圖7 B-B’線的剖面圖，參照該圖可以看出表面為凹凸 加工的傾斜部，並形成了光束吸收手段（6 2 )。 為了防止由光束吸收手段（6 2 )吸收的雷射光束導致 的反饋（feedback)手段（60)的溫度上升，如圖9所示， 光束吸收手段（62)的上方有冷媒’例如，反饋（feedback) 手段（60)上設置冷媒（Refrigerant)流入（63a)、冷媒 (Refrigerant)流出口（63b)，使N2氣隨著冷媒 (Refrigerant)流路（65)而流。圖 9 中冷媒（Refrigerant) 201105448 流入（65 )顯示為直線型，但實際上為了提高冷卻效果也 可以是彎曲狀態。另外，光束吸收手段（62)的一方延伸 著連接在調整位置及角度的驅動部（7〇 )的連接部（67 )， 從而，可以調整（c方向）並水平位置移動（D&E方向） 光束吸收手段（62)的上下角度。因此，可以按光束隔離 手段（50 )上反射的雷射光束角度和位置入射於光束吸收 手段（62)上。 如上所述，根據本發明可以控制入射於基板（3〇 )的 雷射光束（41)長度；另外，實施輸入雷射光束（41)的 強度後，將其反饋（feedback)給鐳射設備（4〇)，從而使 在雷射光束（41)強度的施工過程中也可即時控制。 【圖式簡單說明】 圖1是現有鐳射加工設備示意圖。 圖2(a)、（b)是圖1的雷射光束（41)形態示意圖。 圖3是現有鐘射加工設備問題示意圖。 圖4是本發明鐳射加工設備的部分正剖面示意圖。 圖5是本發明圖4沿A-A’方向的鐳射加工設備的部分 剖面立體圖。 圖6疋本發明光束隔離手段（5〇)的動靜平面概略圖。 圖7、8及圖9是本發明反饋（&6(11)“1〇手段（6〇)示 意圖。 【主要元件符號說明】 201105448 1 〇:反應室 lla， lib:反應氣（Reaction gas)流出入口 20:石英窗 30:基板 31 :周邊部 3 2 :元件領域 40:激光裝置 41 :激光束 _ 50:光束隔離手段 60:反饋（feedback)手段 61:光電探測器（photodetector) 6 2 :光束吸收手段 63a，63b:冷媒（Refrigerant)流入口201105448 VI. Description of the Invention: [Technical Field] The present invention relates to a laser processing apparatus for annealing by laser induced chemical vapor deposition or laser polycrystalline silicon, in particular, a controllable lightning Laser processing equipment that shoots the length and intensity of the beam. [Prior Art] When manufacturing semiconductors, FPDs, and solar cells (s〇iarceii), if a deposit is thin-filmed at a high temperature, a reactor (React〇) is caused by a thermochemical reaction. r) Many problems such as being contaminated or producing unnecessary compounds. Therefore, laser-induced plasma chemical vapor deposition or the like is being used to achieve coating at a low temperature. In addition, as the size of the substrate increases, when annealing is performed after coating, it is difficult to ensure uniformity, and various countermeasures are being introduced. One of them is the laser annealing method. Figure 1 is a schematic view of a conventional laser processing apparatus. The reaction chamber (10) includes a reaction gas outflow inlet (1 la, 1 ib) with a quartz window (20) on the top and a laser device (40) above the quartz window (20). ). The laser beam irradiated in the laser device (40) passes through the quartz window (20) to the substrate (30) in the reaction chamber (1). Figure 2 is a schematic view showing the form of a laser beam (41) irradiated from the laser device (40) of Figure 1. As shown in Fig. 2, the laser beam (41) is irradiated to the substrate (3〇) in a Curtain vertical or a small gradient state. Substrate (3〇) 3 201105448 The surface of the laser beam (41) is horizontally moved in the direction of the arrow so that the laser beam (41) is irradiated to the front of the substrate (30). Fig. 2(a) is a schematic view of the substrate from the top to the bottom, and Fig. 2(b) is a perspective view of the substrate. However, 'as shown in FIG. 3', since the substrate (30) includes the element region (32) directly forming the element and the peripheral portion (31) where the element is not formed, it is necessary to control the laser beam (41) not to be irradiated to the peripheral portion (31). In addition, diffraction may occur at the edge of the laser beam (41), so this problem should be considered during construction. Although it is necessary to control the length of the laser beam (41), conventional techniques cannot control the length of the laser beam (41), and although it is desirable to control the intensity of the laser beam (41) by feedback in engineering, there is no suitable means. . SUMMARY OF THE INVENTION [Problems to be Solved] Therefore, an object of the present invention is to provide a laser processing apparatus capable of controlling the length and strength of a laser beam in order to improve the laser processing rate. [Problem to Solve the Problem] The present invention relates to a laser processing apparatus characterized by comprising: a reaction chamber in which a substrate is mounted on a household and a quartz window is mounted thereon; and is installed outside the stone chamber so as to be located at the top of the quartz window And a Curtain laser beam is irradiated onto the laser device of the substrate; the above-mentioned misalignment device and the above-mentioned iii stone it + pq Xi are not described above; & Moving along the longitudinal direction of the above-mentioned laser beam, at least one end of the beam of the 201105448 beam is mounted at one end. Further, a feedback means is further disposed on the upper space of the beam isolating means, and the beam isolating means is mounted obliquely to the irradiation direction of the laser beam and has a reflection surface reflected upward thereon; the feedback Means, feeding back the beam intensity measured on the photodetector to the laser device, and measuring the intensity of the laser beam reflected by the beam isolation means, so it is recommended to control the device from the above-mentioned misfire device The intensity of the beta beam output on the top. At this time, the above-mentioned photodetector (ph〇t〇detect〇r) can be installed at a specified portion of the bottom of the feedback means; at this time, the above feedback of the above-mentioned photodetector (ph〇t〇detector) is not installed (feedback) ) means the remaining part of the bottom of the 'recommended installation beam absorption means. The beam absorbing means can be formed by the bottom of the feedback means by the knucking kn kn φ ^ ^ , knurling. The other & , ^ additionally can also include adjusting the position of the beam absorbing means [Effects] According to the present invention, the length of the laser beam incident on the substrate is controlled. In addition, the intensity of the laser beam can be instantly controlled for the face during construction. [Embodiment] BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a detailed description of a preferred embodiment of the present invention. The following embodiments are provided only for understanding the contents of the present invention. If a person skilled in the art, 贞彳γ J The technical idea of the present invention is further changed by 201105448. Therefore, the scope of the invention should not be construed as being limited to the embodiments. Figure 4 is a partial front cross-sectional view of the laser processing apparatus of the present invention; Figure 5 is Figure 4. A partial cross-sectional perspective view along the A-A' direction. In addition, Fig. 6 is a schematic diagram of the dynamic and static plane of the beam isolating means (50). Figure 4 and Figure 5 'beam isolation means (5 0) will be placed between the laser device (40) and the quartz window (20) and as shown in Figure 6, the beam isolation means (50) will isolate both ends of the Curtain laser beam (41) simultaneously, To be horizontally moved in the direction of the lateral arrow of the laser beam (41), so that it is determined that the beam is horizontally moved according to the beam isolating means (50), And the effective length of the laser beam (41) irradiated on the substrate (3 。). Here, the laser device (4 〇) represents an attenuator that controls the laser light source and the intensity of the laser beam appearing there. (50) not only isolating the laser beam (41), but also providing a reflecting surface for reflection thereto, and obliquely mounting in the irradiation direction of the laser beam (41). At this time, if the reflecting surface is formed by the reflective coating, The problem of deterioration or structural change occurs when the laser beam (41) is added to the reflective coating. Therefore, it is recommended to use a method of smooth processing of the beam isolation means (5 〇) material surface to make the reflection surface. Figure 4 and Figure 5. In order to clearly illustrate, only the figure One of the beam isolating means (50) provided at both ends; and a refrigerant flow inlet (63a) and a refrigerant return outlet (63b) of the feedback means (60) are omitted. The laser beam reflected by the beam isolating means (50) is incident on a photodetector (61) mounted on the bottom of the feedback means (60). Figure 7 is a feedback means (6〇) The bottom view of the bottom, and roughly shows the structure looking up in the direction of arrow A. A feedback means (60)' controls the intensity of the input laser beam after the photodetector (61) is measured, and the laser beam intensity is fed back to the laser device (40) and outputted in the laser device. . In order to prevent the laser beam (41) from being reflected again by the feedback means (6〇) and then incident on the substrate (30) and shadowing the construction, a beam absorbing means is installed around the photodetector (61). (62). The beam absorbing means (62) is formed by processing the periphery of the photodetector (61) into a concavo-convex shape, for example, knurling or machining into a gear shape. Alternatively, the periphery of the photodetector may be provided with an inclined portion by machining. Figure? Zhongru Lu and the above's slash show the processing part for beam absorption. Fig. 8 is a cross-sectional view taken along line B-B' of Fig. 7, and with reference to the figure, it can be seen that the surface is an inclined portion which is processed by the unevenness, and a beam absorbing means (62) is formed. In order to prevent the temperature of the feedback means (60) caused by the laser beam absorbed by the beam absorbing means (62) from rising, as shown in Fig. 9, there is a refrigerant above the beam absorbing means (62), for example, feedback ( Feedback) The refrigerant (Refreerant) inflow (63a) and the Refrigerant flow outlet (63b) are provided in the means (60), and the N2 gas flows along the refrigerant flow path (65). In Figure 9, the refrigerant (Refrigerant) 201105448 inflow (65) is shown as a straight line, but it can actually be bent to improve the cooling effect. Further, one of the light beam absorbing means (62) extends the connecting portion (67) of the driving portion (7) connected to the adjustment position and the angle, so that the (c direction) can be adjusted and moved horizontally (D&E direction). The upper and lower angles of the beam absorbing means (62). Therefore, the angle and position of the laser beam reflected on the beam isolating means (50) can be incident on the beam absorbing means (62). As described above, according to the present invention, the length of the laser beam (41) incident on the substrate (3) can be controlled; in addition, after the intensity of the input laser beam (41) is applied, it is fed back to the laser device (4). 〇), so that it can be controlled immediately during the construction of the intensity of the laser beam (41). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a conventional laser processing apparatus. 2(a) and 2(b) are schematic views showing the form of the laser beam (41) of Fig. 1. 3 is a schematic diagram of a problem of a conventional clock processing equipment. Figure 4 is a partial front cross-sectional view showing the laser processing apparatus of the present invention. Figure 5 is a partial cross-sectional perspective view of the laser processing apparatus of Figure 4 taken along the line A-A' of the present invention. Fig. 6 is a schematic diagram showing the dynamic and static planes of the beam isolating means (5〇) of the present invention. Figures 7, 8 and 9 are schematic diagrams of the feedback (&6(11)"1" means (6〇) of the present invention. [Explanation of main component symbols] 201105448 1 〇: Reaction chamber lla, lib: Reaction gas Outflow inlet 20: quartz window 30: substrate 31: peripheral portion 3 2 : component field 40: laser device 41: laser beam _ 50: beam isolation means 60: feedback means 61: photodetector 6 2 : Light beam absorbing means 63a, 63b: Refrigerant flow inlet

Claims (1)

201105448 七、申請專利範圍： 1. -種鐳射加工設備，其特徵在於，包括：在内部安 裝基板並在上方安裝石英窗的反應室；安裝於上述反應室 的外部’使其位於上述石英窗的頂部，並將簾狀（Curtaln) 备射光束照射於上述基板的鐳射裝置；安裝於上述錯射裝 置和上述石英窗之間，並隔離上述雷射光束的側面，為使 沿著上述雷射光束的縱向水平移動’在上述雷射光束的兩 端中至少安裝於一端的光束隔離手段。 2. 如申睛專利範圍第1項所述的鐘射加工設備，其 書 中，在上述光束隔離手段的上方空間上再安裝反饋 (feedback)手段；而上述光束隔離手段，對於上述雷射光 束的照射方向傾斜地安裝，並且其上方有反射上方的反射 面，上述反饋（feedback)手段，將在上述光電探測器 (photodetector)上測量的光束強度反饋（feedback)給上 述鐳射設備，使輸入根據上述光束隔離手段反射的雷射光 束後測量其強度，因此建議控制從上述鐳射設備上輸出的 雷射光束強度。 籲 3. 如申請專利範圍第2項所述的鐳射加工設備，其 中，上述反饋（feedback)手段的底部安裝上述光電探測器 (photodetector);在未安裝上述光電探測器 (photodetector)的上述反饋（feedback)手段底部剩餘部 分安裝光束吸收手段。 4·如申請專利範圍第3項所述的鐳射加工設備，其 中’上述光束吸收手段將未安裝上述光電探測器的上述反 10 201105448 饋（feedback)手段底部剩餘部分加工成凹凸形狀。 5. 如申請專利範圍第4項所述的鐳射加工設備，其 中’加工成上述凹凸形狀，包括滾花加工或鋸齒狀加工。 6, 如申請專利範圍第3或4項所述的鐳射加工設備， 其中’在未安裝上述光電探測器的上述反饋（feedback)手 段底部剩餘部分，將光束吸收手段加工成有傾斜面。 7·如申請專利範圍第3項所述的鐳射加工設備，其 中，為冷卻上述光束吸收手段’在上述反饋（feedback)手 段形成冷卻流路。 中 8.如申請專利範圍第 更多包括調整上述光束 13項所述的鐳射加工設備，其 吸收手段位置及角度的驅動部。201105448 VII. Patent application scope: 1. A laser processing equipment, comprising: a reaction chamber in which a substrate is mounted inside and a quartz window is mounted thereon; and is installed outside the reaction chamber to make it located in the above quartz window a laser device for illuminating the substrate with a Curtaln beam; the laser device is mounted between the misalignment device and the quartz window, and isolating the side surface of the laser beam so as to be along the laser beam The longitudinal movement of the beam is 'a beam isolation means at least one end of the above-mentioned laser beam. 2. The clock processing apparatus according to claim 1, wherein in the book, a feedback means is further mounted on the space above the beam isolating means; and the beam isolating means for the laser beam The illumination direction is obliquely mounted, and there is a reflection surface above the reflection, and the feedback means feeds the beam intensity measured on the photodetector to the laser device, so that the input is according to the above The intensity of the laser beam output from the above-mentioned laser device is controlled by measuring the intensity of the laser beam reflected by the beam isolation means. The laser processing apparatus of claim 2, wherein the photodetector is mounted on a bottom portion of the feedback means; and the feedback of the photodetector is not installed ( Feedback) means the beam absorption means is installed on the remaining part of the bottom of the means. 4. The laser processing apparatus according to claim 3, wherein the beam absorbing means processes the remaining portion of the bottom portion of the feedback means without the photodetector to be formed into a concave-convex shape. 5. The laser processing apparatus according to claim 4, wherein the processing is performed into the uneven shape, including knurling or sawtooth processing. 6. The laser processing apparatus according to claim 3, wherein the beam absorbing means is processed into an inclined surface at a remaining portion of the bottom portion of the feedback means on which the photodetector is not mounted. 7. The laser processing apparatus according to claim 3, wherein the cooling means is formed in the feedback means for cooling the beam absorbing means. 8. In the scope of the patent application, the laser processing apparatus according to the above-mentioned beam of the above-mentioned beam, which absorbs the position and angle of the driving portion, is included.
TW099119025A 2009-06-25 2010-06-11 Laser processing equipment that can control the length and intensity of laser beam TWI395631B (en)

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