JP5687249B2 - Heat flux processing by scanning - Google Patents

Description

Field of Invention
[0001] The present invention relates generally to the manufacture of semiconductor devices. More particularly, the present invention is directed to an apparatus and method for thermally treating a substrate by scanning the substrate with a line of radiation.

  [0002] There is always a demand in the integrated circuit (IC) market for larger memory capacities, faster switching speeds, and smaller feature sizes. One of the major steps the industry has taken to address these demands is to batch process multiple substrates, such as silicon wafers, in a large furnace, thus processing a single substrate in a small reaction chamber. It is to switch to.

  [0003] Generally, in such a batch process manufacturing, four basic operations are performed: stratification, patterning, doping and heat treatment. Many of these operations require heating the substrate to an elevated temperature so that various chemical and physical reactions can occur. Of particular interest are heat treatment and stratification, each of which is described below.

  [0004] A heat treatment is an operation in which the substrate is simply heated and cooled to obtain a particular result. During the heat treatment, no additional material is added to or removed from the substrate. Heat treatments such as rapid thermal annealing or annealing usually require a relatively large amount of thermal energy (high temperature) to be applied to the substrate in a short time, and then the substrate is rapidly cooled to terminate the thermal treatment. . The amount of thermal energy transferred to the substrate during such processing is known as the thermal history. The thermal history of a material is a function of temperature and process time span. A low thermal history is desirable in the manufacture of micro ICs that can only be performed at high temperatures when the process time is very short.

  [0005] Currently utilized thermal processing includes, for example, rapid thermal processing (RTP) and impulse (spike) annealing. Although such processes are widely used, current technology is not ideal. Such techniques tend to expose the substrate to high temperatures for extended periods of time, in addition to being too slow to ramp up and down the substrate temperature. These problems become increasingly severe as the size of the substrate increases, the switching speed increases and / or the feature size decreases.

  [0006] Generally, these heat treatments raise the temperature of the substrate under controlled conditions based on a predetermined thermal recipe. These thermal recipes basically consist of the temperature at which the substrate must be heated, the rate of change of temperature, i.e., the temperature ramp-up and ramp-down rates, and the time that the thermal processing system remains at a specific temperature. For example, a thermal recipe may require that the substrate be heated from room temperature to individual temperatures of 1200 ° C. or higher, and that the processing time at each individual temperature be up to 60 seconds or more.

  [0007] Further, to meet certain objectives such as minimizing dopant diffusion in the substrate, the length of time that each substrate is subjected to high temperatures must be limited. To achieve this, it is preferred that the temperature ramp-up and ramp-down rates be high. In other words, it is desirable to be able to adjust the substrate temperature from a low temperature to a high temperature in the shortest possible time and vice versa to minimize thermal history.

  [0008] This requirement for high temperature ramp rates is in the range of 200-400 ° C / s compared to typical temperature ramp-up rates of 5-15 ° C / min for conventional furnaces. It led to the development of some rapid thermal processing (RTP). Typical ramp down rates are in the range of 80-150 ° C / s.

  [0009] FIG. 1 is a graph 100 illustrating the thermal profile of different conventional thermal processes. As is apparent, a typical RTP system thermal profile 102 has a ramp-up rate of 250 ° C./s and a ramp-down rate of 90 ° C./s.

  [0010] A disadvantage of RTP is that it heats the entire substrate, even if the IC device is only on the top few microns of the substrate. This limits how fast the substrate can be heated and cooled. Furthermore, when the entire substrate is at a high temperature, heat can only be dissipated into the surrounding space or structure. As a result, today's state-of-the-art RTP systems struggle to obtain a ramp-up rate of 400 ° C./s and a ramp-down rate of 150 ° C./s.

  [0011] FIG. 1 also shows a thermal profile 104 of the laser annealing process. Laser annealing is used during the manufacture of thin film transistor (TFT) panels. Such a system uses a laser spot to melt and recrystallize the polysilicon. The entire TFT panel is exposed by scanning a laser spot across successive exposure fields on the TFT panel. For substrate applications, a laser pulse is used to illuminate the exposure field for a period of about 20-40 ns, where the exposure field is obtained by raster scanning across the substrate and down the substrate. It is done. As can be seen from the thermal profile 104 for laser annealing, the ramp rate is almost instantaneously billions of degrees per second. However, the laser pulses or flash used for laser annealing are too fast and often do not give enough time to produce sufficient annealing for non-melting processes. Also, devices or structures adjacent to the exposed areas may be exposed to extreme temperatures that cause them to melt, or exposed to temperatures that are too low to cause annealing. In addition, homogenization of the thermal exposure of each part of the substrate is difficult to achieve because different regions absorb at different rates and produce large temperature gradients. This process is too fast for thermal diffusion to the equilibrium temperature, creating a tremendous pattern dependence. As a result, this technique is not suitable for single crystal silicon annealing because different regions on the substrate surface can be heated to significantly different temperatures, resulting in large non-uniformities over short distances.

  [0012] Another heat treatment system currently under development by Canadian Voltech Industries Limited uses flash-assisted spike annealing to provide high thermal energy to the substrate in a short time, and then rapidly cool the region, It attempts to limit heat exposure. The use of this heat treatment system will give spike anneal junction depths up to 1060 ° C, but should improve flash activation to 1100 ° C. Typically, RTP systems typically ramp up to a desired temperature of approximately 1060 ° C. and then begin ramping down immediately after reaching the desired flash temperature. This is done to minimize the amount of diffusion that occurs while still obtaining adequate activation from high temperatures. A thermal profile 106 of such a flash assist spike anneal is also shown in FIG.

  In view of the foregoing, there is a need for an apparatus and method for annealing a substrate with high ramp-up and ramp-down rates. This gives great control to the manufacture of small devices and results in improved performance. In addition, such an apparatus and method must ensure that each point on the substrate has a substantially uniform thermal exposure, thereby reducing pattern dependence and potential defects.

  [0014] Next, focus on stratification, another basic manufacturing operation that usually requires the addition of energy or heat. Stratification uses a variety of techniques to add a thin layer or film to the surface of the substrate, the most widely used being growth and deposition. The added layer functions as a semiconductor, dielectric (insulator) or conductor in the IC device. These layers must meet various requirements such as uniform thickness, smooth and flat surface, uniform composition and particle size, stress free film, purity and integrity. Typical deposition techniques that require additional energy include various CVDs known as chemical vapor deposition (CVD), rapid thermal chemical vapor deposition (RTCVD), and low pressure CVD (LPCVD), to name a few. ) And various other CVDs known as) and atomic layer deposition (ALD).

[0015] CVD is the most widely used technique for physically depositing one or more layers or films, such as silicon nitride (Si ₃ N ₄ ), on a substrate surface. During the CVD process, various gases such as ammonia (NH ₃ ) and dichlorosilane (DCS) containing atoms or molecules required for the final film are injected into the reaction chamber. A chemical reaction between gases is induced with high energy such as heat, light or plasma. The reacted atoms or molecules are deposited on the substrate surface and accumulated so as to form a thin film having a predetermined thickness. Reaction by-products are substantially flushed from the reaction chamber. The deposition rate can be manipulated by controlling the reaction conditions of the supply energy, the amount and ratio of gases present in the reaction chamber, and / or the pressure in the reaction chamber.

  [0016] Reaction energy is generally supplied by heat (conduction or convection), induction RF, radiation, plasma, or ultraviolet energy sources. The temperature is generally in the range from room temperature to 1250 ° C, more typically in the range of 250 ° C to 850 ° C.

  [0017] While current thermal propulsion processes desire to heat the substrate to elevated temperatures, it is also desirable not to expose the substrate to these elevated temperatures significantly longer. In other words, it is desirable to be able to adjust the temperature of the substrate from a low temperature to a high temperature and vice versa, in as short a time as possible, ie having a low thermal history.

  [0018] However, current thermal propulsion processes heat the entire substrate even though only the surface of the substrate need be heated. Heating the entire substrate limits how quickly the substrate can be heated and cooled because the substrate will have a thermal inertia that resists changes in temperature. For example, if the entire substrate becomes hot, the substrate cannot be cooled unless heat is dissipated into the surrounding space or structure.

  [0019] In CVD or LPCVD, various gases are supplied or injected simultaneously into the reaction chamber. However, the gas phase reaction that occurs between the reaction gases can occur at any location within the reaction chamber including the surrounding space around the substrate. Reactions that occur in the surrounding space are undesirable because they can form particles that will be embedded in the membrane. Vapor phase reactions also cause flow-dependent deposition, which can cause significant non-uniformity due to this flow dependency.

  [0020] Recently, ALD has been developed to address the problem of the gas phase reaction in CVD and LPCVD. In ALD, a first gas is injected into a reaction chamber. The first gas atoms or molecules adhere to the surface of the substrate. A purge gas is then injected to flush the first gas from the reaction chamber. Finally, a second gas is injected into the reaction chamber and reacts with the second gas on the surface of the substrate. Since the first and second gases are not present in the reaction chamber at the same time, no gas phase reaction occurs in the surrounding space. This eliminates problems associated with particle formation and flow dependence in the surrounding space. However, the deposition rate of ALD is low, about 1 kg / sec. ALD is also constrained by the same temperature constraints and thermal history issues as CVD.

  [0021] In view of the foregoing, there is a need for an apparatus and method for depositing layers on a substrate that alleviates the gas phase reaction problem. More particularly, such an apparatus and method should heat only the surface of the substrate and provide a high ramp-up and ramp-down rate, ie a low thermal history. Such an apparatus and method also satisfies general and specific parameters such as uniform layer thickness, smooth and flat layer surface, uniform layer composition and particle size, low stress film, purity and integrity. Is preferred.

  [0022] According to one embodiment of the present invention, an apparatus for depositing a layer on a substrate is provided. The apparatus includes a reaction chamber and a gas injector configured to inject at least one gas into the reaction chamber. The apparatus also includes a continuous wave electromagnetic radiation source, a stage in the reaction chamber, and a focusing optical system disposed between the continuous wave electromagnetic radiation source and the stage. The stage is configured to receive a substrate thereon. The converging optics is configured to focus the continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on the top surface of the substrate. The line of continuous wave electromagnetic radiation preferably extends across the width or diameter of the substrate. The apparatus further includes a translation mechanism configured to translate the stage and the line of continuous wave electromagnetic radiation relative to each other.

  [0023] Furthermore, in accordance with the present invention, a method is provided for depositing one or more layers on a substrate. The substrate is first placed in the reaction chamber. One or more gases are introduced into the reaction chamber. A predetermined speed for translating the line of radiation is determined. This predetermined speed is based on a number of factors such as the thermal recipe for processing the substrate, the characteristics of the substrate, the power of the continuous wave electromagnetic radiation, the width of the radiation line, the power density in the radiation line, etc. .

  [0024] Continuous wave electromagnetic radiation is then emitted from the continuous wave radiation source and preferably collimated. The continuous wave electromagnetic radiation is then focused into a line of radiation that extends across the surface of the substrate. The line of radiation is then translated relative to the surface at a constant predetermined speed.

  [0025] In combination with the introduced gas (s) and the heat generated by the radiation, at least one gas reacts to deposit a layer on the surface of the substrate. Undesirable reaction byproducts are then flushed from the reaction chamber. This process is repeated until a layer of a predetermined thickness is formed on the surface of the substrate.

  [0026] According to another embodiment of the present invention, a heat flux processor is provided. The heat flux processing apparatus includes a continuous wave electromagnetic radiation source, a stage, a focusing optical system, and a translation mechanism. The continuous wave electromagnetic radiation source is preferably one or more laser diodes. The stage is configured to receive a substrate thereon. The converging optical system is disposed between the continuous wave electromagnetic radiation source and the stage so as to converge the continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on the upper surface of the substrate. Preferably it is configured. The length of the line of continuous wave electromagnetic radiation preferably extends over the entire width of the substrate. The translation mechanism is preferably configured to translate the stage and the line of continuous wave electromagnetic radiation relative to each other and preferably includes a chuck for securely grasping the substrate.

  [0027] Further provided is a method for heat treating a substrate. Continuous wave radiation is focused to a line of radiation at the top surface of the substrate. The line of radiation is translated relative to the surface at a constant predetermined speed. This allows each point on the substrate to have a substantially homogeneous thermal exposure or thermal history. By controlling the scan speed rather than the lamp power, process control is achieved and the control of the device is simplified. This allows high local heating without causing defects.

[0028] Therefore, the present invention heats only a small portion of the surface of the substrate at a given moment. This alleviates the total radiated power requirement. In fact, an energy density of 150 kW / cm ² can be achieved with only a 5 kW radiation source on a 300 mm substrate since only one of the substrate strings is heated at a time.

  [0029] By heating a small area at a given moment, a ramp rate of millions of degrees per second can be achieved on the substrate with only a few kilowatts of radiated power. In addition, this high ramp rate allows the top surface to be heated from ambient temperature to over 1200 ° C. and allowed to cool back to approximately ambient temperature before the volume temperature of the substrate can be increased.

  [0030] The apparatus and method described above can heat the substrate surface to an appropriate temperature within 1 millisecond. Furthermore, since the radiation lines only give heat to the surface of the substrate, the gas reaction only occurs at the surface. If room temperature reactions are negligible, this allows multiple gases to be injected simultaneously without incurring unwanted gas phase reactions away from the substrate surface. This method can be performed at atmospheric pressure to produce fast decomposition of the reactants, which allows for high deposition rates.

[0031] According to another embodiment of the present invention, there is provided a thermal processing apparatus comprising a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, and a computer system. . The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent to the stage and configured to emit continuous wave electromagnetic radiation along a path toward the substrate. A series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage. The series of lenses is configured to condense continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on the surface of the substrate. This condensation causes the radiation to converge or concentrate on or towards the line of continuous wave electromagnetic radiation. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to each other. A detection module is disposed in the path and configured to detect continuous wave electromagnetic radiation. In a preferred embodiment, the detection module is placed between a series of lenses, more preferably between an extension lens and the remaining lens configured to condense continuous wave electromagnetic radiation. The computer system is coupled to the detection module. Also, in a preferred embodiment, the line of continuous wave electromagnetic radiation has a width of 500 microns or less and a power density of at least 30 kW / cm ² .

  [0032] The detection module preferably includes at least one emitted power detector configured to detect emitted continuous wave electromagnetic radiation emitted from a continuous wave electromagnetic radiation source. The detection module also preferably includes at least one reflected power detector configured to detect reflected continuous wave electromagnetic radiation reflected from the surface. At least one beam splitter is provided to sample a portion of the emitted continuous wave electromagnetic radiation or to sample a portion of the reflected continuous wave electromagnetic radiation. This beam splitter is preferably arranged between the continuous wave electromagnetic radiation module and the stage, more preferably between a series of lenses, more preferably an extension lens and so as to condense the continuous wave electromagnetic radiation. It is arranged between the remaining lenses constructed. In one embodiment, the emitted power detector and reflected power detector detect 810 nm continuous wave electromagnetic radiation. The at least one temperature detector is configured to detect a surface temperature in a line of continuous wave electromagnetic radiation by detecting continuous wave electromagnetic radiation having a wavelength other than 810 nm. A filter is preferably arranged between the temperature detector and the line of continuous wave electromagnetic radiation. This filter is configured to allow only continuous wave electromagnetic radiation having a wavelength other than 810 nm to reach the temperature detector. This filter is configured to allow the optical pyrometer to operate from 900 nm to 2000 nm, in particular 1500 nm.

  [0033] A computer system provides a procedure for determining emitted power emitted to an emitted power detector, a procedure for determining reflected power reflected to the reflected power detector, and a continuous wave electromagnetic radiation source And a procedure for controlling the power to be generated based on the detected, emitted and / or reflected power. The computer system may also include a reflectance procedure for determining the reflectance. The reflectance is proportional to the reflected power divided by the emitted power. The computer system may also include a procedure for determining the temperature of the surface in the line of continuous wave radiation. The temperature is proportional to the absorbed power equal to the emitted power minus the reflected power.

  [0034] The series of lenses preferably includes at least one extension lens disposed between the continuous wave electromagnetic radiation source and the stage. The at least one stretching lens is configured to stretch a beam of continuous wave electromagnetic radiation emitted from a source of continuous wave electromagnetic radiation into a stretched beam of continuous wave electromagnetic radiation. The series of lenses may further include a number of cylindrical lenses arranged in series between the continuous wave electromagnetic radiation source and the stage. These multiple cylindrical lenses are configured to focus the stretched beam of continuous wave electromagnetic radiation onto a line of continuous wave electromagnetic radiation at the surface of the substrate.

  [0035] The continuous wave electromagnetic radiation source comprises multiple sets of opposing laser diode modules, and each of the multiple sets of opposing laser diode modules is preferably controlled separately. It is also preferred that a separate detection module is provided for each set of laser diodes.

  [0036] An interleave synthesizer is preferably disposed between the continuous wave electromagnetic radiation source and the series of lenses. This interleaved synthesizer preferably uses a dielectric stack for enhanced reflection at continuous wave electromagnetic radiation wavelengths. The heat emission signal from the substrate is preferably measured via a series of lenses and an interleaved synthesizer at wavelengths longer than continuous wave electromagnetic radiation. An interleaved synthesizer uses a fill ratio enhancement optical system to reduce the size of a series of lenses.

  [0037] An adjustment mechanism may also be provided to move the continuous wave electromagnetic radiation source and stage toward each other. This allows the computer system to control the adjustment mechanism based on the measurements obtained by the detection module to keep the line of continuous wave radiation focused on the surface. In another embodiment, a reflective surface is provided to redirect the scattered continuous wave radiation back towards the line of continuous wave radiation.

[0038] According to another embodiment of the present invention, a heat treatment method is provided. The surface of the substrate is heated at a predetermined power density for a predetermined time. This allows the surface of the substrate to be heated from ambient temperature (T _A ) to process temperature (T _P ), but the temperature at a given depth from the surface (T _D ) is from ambient temperature to process temperature. It kept below plus half but minus the ambient temperature _{(T D ≦ T a + (} T P -T a) / 2). In a preferred embodiment, the predetermined power density is at least 30 kW / cm ² , the predetermined time length is from 100 microseconds to 100 milliseconds, the ambient temperature is less than about 500 ° C., and the process temperature is about 700 ° C. Higher, the predetermined depth is 10 times the depth, where the depth is the maximum depth of the device structure in silicon.

  [0039] The heat treatment method may also include the step of first coating the surface with a thermal enhancement layer. Scattered continuous wave electromagnetic radiation may also be reflected back toward the line of radiation. The emitted power of continuous wave electromagnetic radiation and the reflected power of continuous wave electromagnetic radiation reflected from the surface may be measured. The reflected power may then be compared with the emitted power. The power supplied to the continuous wave electromagnetic radiation source may be controlled based on such a comparison. In addition, individual measurements of thermal radiation from the substrate may be made at the focal point of the line of continuous wave electromagnetic radiation at a wavelength substantially different from the reflected continuous wave electromagnetic radiation. The temperature may be determined in a line on the surface. Also, the absorptance, reflectance, and emission rate may be determined.

  [0040] Prior to convergence, an optimal orientation of the substrate relative to the scanning direction may be selected. The optimal orientation is determined by ensuring that the scanning direction has minimal overlap with the main slip plane of the substrate. The substrate may also be preheated. Preheating consists of one or more pre-scans with a continuous wave electromagnetic radiation source and is preferably performed using a hot plate.

  [0041] Further in accordance with the present invention, the series of lenses includes at least one extension lens and a plurality of cylindrical lenses. The stretch lens is disposed between the continuous wave electromagnetic radiation source and the stage. The stretch lens is configured to stretch a beam of continuous wave electromagnetic radiation into a stretched beam of continuous wave electromagnetic radiation. The plurality of cylindrical lenses are preferably arranged in series between at least one extension lens and the stage. The plurality of cylindrical lenses are configured to focus the stretched beam of continuous wave electromagnetic radiation onto a line of continuous wave electromagnetic radiation on the surface of the substrate. The at least one extension lens preferably includes two extension lenses, while the plurality of cylindrical lenses have a spherical shape or an aspheric shape. Some of the plurality of cylindrical lenses have a spherical shape, and others do not have to have it. A gas injector may be provided in the vicinity of the plurality of lenses, and the cooling purge gas may be circulated between the plurality of lenses.

  [0042] In addition, an automatic convergence mechanism for the heat treatment apparatus is provided. The automatic focusing mechanism includes a continuous wave electromagnetic radiation module, a stage, at least one photo detector, a translation mechanism, an adjustment mechanism, and a controller. The continuous wave electromagnetic radiation module is configured to focus the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on the surface of the substrate. The stage is configured to receive a substrate thereon. At least one photo detector is coupled to the stage. At least one photo detector is configured to measure the intensity of the continuous wave electromagnetic radiation. The translation mechanism is configured to translate the stage and the continuous wave electromagnetic radiation module relative to each other. The adjustment mechanism is coupled to the stage and is configured to adjust the height, roll and pitch of the stage. Finally, the controller is coupled to a continuous wave electromagnetic radiation module, at least one photo detector, a translation mechanism, and an adjustment mechanism. The at least one photo detector preferably includes three photo detectors embedded in a stage. The three photo detectors and the controller are configured to measure the pitch, roll and height of the stage relative to the continuous wave electromagnetic radiation module.

  [0043] In use, the lines of continuous wave electromagnetic radiation are automatically focused on the surface of the substrate. After the automatic convergence mechanism is provided, a tool substrate through which at least one aperture penetrates is placed on the stage. The at least one aperture is aligned with the at least one photo detector. The at least one aperture is then irradiated with continuous wave electromagnetic radiation from a continuous wave electromagnetic radiation source. The intensity of the continuous wave electromagnetic radiation is then measured in at least one photo detector, and the position of the stage and the continuous wave electromagnetic radiation source are adjusted to each other based on the intensity.

  [0044] The stage and continuous wave electromagnetic radiation source are then translated laterally relative to one another to align another aperture on the tool substrate and another photo detector. Another aperture is then exposed to continuous wave electromagnetic radiation from a continuous wave electromagnetic radiation source. Then, another intensity of continuous wave electromagnetic radiation is sensed at another photo detector. Finally, based on this different intensity, the position of the stage and the continuous wave electromagnetic radiation source are set to each other. These steps are repeated until the stage is in place relative to the continuous wave electromagnetic radiation source.

  [0045] Yet another embodiment provides a method of heat treating a semiconductor substrate. Continuous wave electromagnetic radiation is focused into a line of continuous wave electromagnetic radiation that extends partially across the surface of the semiconductor substrate. The line of continuous wave electromagnetic radiation and the surface are then translated relative to each other at a constant rate. The line of radiation is then shifted along its length by a distance equal to or slightly shorter than that length. Again, the line of continuous wave electromagnetic radiation and the surface are translated relative to each other at a constant rate. This overscan allows each exposure point of the substrate to have a substantially uniform thermal exposure.

[0046] For a better understanding of the features and objects of the present invention, reference will now be made in detail to the accompanying drawings.
It is a graph which shows the thermal profile of various conventional thermal processes. 1 is a schematic side view showing an apparatus for heat-treating a substrate according to an embodiment of the present invention. FIG. 2B is a schematic top view of the substrate and the stage shown in FIG. 2A. FIG. 6 is a schematic side view illustrating another apparatus for heat treating a substrate according to another embodiment of the present invention. 3 is a flowchart of a method for heat treating a substrate. 6 is a graph illustrating the temperature on and through a substrate at a fixed point during a heat treatment according to an embodiment of the present invention. FIG. 6 is a schematic side view illustrating an apparatus for depositing a layer on a substrate according to another embodiment of the present invention. 7 is a flow chart illustrating a method for depositing a layer on a substrate according to the embodiment of the present invention shown in FIG. 7 is a graph showing the results of a Monte Carlo simulation for decomposing silane at 850 ° C. and 740 Torr according to the embodiment of the present invention shown in FIG. 6. FIG. 6 is a side view showing still another apparatus for heat-treating a substrate according to still another embodiment of the present invention. FIG. 9B is a perspective view of the apparatus shown in FIG. 9A. FIG. 6 is a rear view showing still another apparatus for heat-treating a substrate according to still another embodiment of the present invention. FIG. 9B is a schematic side view of the interleave synthesizer shown in FIGS. 9A and 9B. FIG. 9B is a detailed cross-sectional side view of the converging optics and detection module shown in FIGS. 9A and 9B. FIG. 10 is an isometric view showing a prototype of the apparatus shown in FIGS. 9A and 9B. 2 is a flowchart of a method for controlling a thermal process. It is a partial cross section side view of an automatic convergence mechanism. FIG. 14B is a top view of the tool substrate and the stage shown in FIG. 14A along the line 14B-14B ′. 5 is a flow chart illustrating a method for automatically focusing a line of continuous wave electromagnetic radiation on the top surface of a substrate. FIG. 6 is a graph showing measured energy density and distance from the best focus at the aperture. FIG.

  [0067] Corresponding parts are indicated with the same reference numerals throughout the several figures. For ease of reference, the first digit of a reference number generally refers to the drawing number in which the reference number is first shown. For example, 102 can be seen in FIG. 1 and 1341 can be seen in FIG.

  [0068] FIG. 2A is a schematic side view illustrating an apparatus 200 for heat treating a substrate according to an embodiment of the present invention. The heat treatment of the substrate is a thermal process that requires the features of the present invention described below. Examples of such thermal processes include thermal processes used for thermal annealing or chemical vapor deposition (CVD) of substrates, both of which are described throughout the remaining figures.

  [0069] The apparatus 200 comprises a continuous wave electromagnetic radiation module 201, a stage 216 configured to receive a substrate 214, and a translation mechanism 218. The continuous wave electromagnetic radiation module 201 includes a continuous wave electromagnetic radiation source 202 and a converging optical system 220 disposed between the continuous wave electromagnetic radiation source 202 and a stage 216.

  [0070] In a preferred embodiment, the substrate 214 is a single crystal silicon substrate, silicon-on-insulator (SOI), silicon germanium or alloys thereof, glass with a silicon layer used to manufacture thin film transistors (TFTs), or A suitable substrate such as a quartz substrate. However, it is clear that heat flux processing of single crystal silicon substrates is even more difficult than with TFT substrates. This is because single crystal silicon substrates have significantly higher thermal conductivity than TFTs, and the use of single crystal silicon substrates requires tighter control of the thermal process.

  [0071] The continuous wave electromagnetic radiation source 202 may emit electromagnetic radiation such as "continuous wave" or light. By “continuous wave” is meant that the radiation source is configured to emit radiation continuously, ie, radiation that is not a burst, pulse or flash. This is quite different from lasers typically used for laser annealing using burst or flash light.

  [0072] Furthermore, since continuous wave electromagnetic radiation needs to be absorbed at or near the surface of the substrate, the wavelength of the radiation is within a range where the substrate absorbs radiation. In the case of a silicon substrate, the continuous wave electromagnetic radiation preferably has a wavelength of 190 nm to 950 nm. More preferably, it has a wavelength of about 808 nm.

  [0073] Alternatively, high power continuous wave electromagnetic radiation laser sources operating at or near the UV may be used, in which case the wavelengths generated by such continuous wave electromagnetic radiation laser sources are most It is strongly absorbed by the reflective material.

  [0074] In a preferred embodiment, the continuous wave electromagnetic radiation source 202 can emit radiation continuously for at least 15 seconds. In a preferred embodiment, the continuous wave electromagnetic radiation source 202 also comprises a plurality of laser diodes each generating uniform and spatially coherent light of the same wavelength. In yet another preferred embodiment, the power of the laser diode is in the range of 0.5 kW to 50 kW, but is preferably about 5 kW. Suitable laser diodes may be manufactured by Coherent, Inc. of Santa Clara, Calif., Spectra-Physics of California, or Cutting Edge Optronics, Inc. of St. Charles Missley. The preferred laser diode is manufactured by Cutting Edge Optronics, but another suitable laser diode is Spectra Physics' MONSONON which provides 40-480 watts continuous wave power per laser diode module. Trademark) Multibar Module (MBM).

  [0075] The focusing optics 220 preferably includes one or more collimators 206 that collimate the radiation 204 from the continuous wave electromagnetic radiation source 202 into a substantially parallel beam 208. This collimated radiation 208 is then focused by at least one lens 210 onto a line of radiation 222 on the upper surface 224 of the substrate 214.

  [0076] Lens 210 is a suitable lens or series of lenses capable of converging radiation into a line. In a preferred embodiment, lens 210 is a cylindrical lens. Alternatively, the lens 210 may be one or more concave lenses, convex lenses, plane mirrors, concave mirrors, convex mirrors, refractive lenses, diffractive lenses, Fresnel lenses, gradient index lenses, and the like. The convergence optical system 220 will be described in detail below with reference to FIG.

  [0077] The stage 216 is a platform or chuck that can hold the substrate 214 firmly during translation, as described below. In a preferred embodiment, stage 216 includes means for gripping the substrate, such as a friction, gravity, mechanical or electrical system. Suitable gripping means include, for example, mechanical clamps, electrostatic or vacuum chucks, and the like.

  [0078] The apparatus 200 also includes a translation mechanism 218 configured to translate the stage 216 and the line of radiation 222 relative to each other. In one embodiment, translation mechanism 218 is coupled to stage 216 and moves stage 216 relative to continuous wave electromagnetic radiation source 202 and / or focusing optics 220. In another embodiment, translation mechanism 218 is coupled to continuous wave electromagnetic radiation source 202 and / or focusing optics 220 and moves continuous wave electromagnetic radiation source 202 and / or focusing optics 220 relative to stage 216. . In yet another embodiment, the translation mechanism 218 moves both the continuous wave electromagnetic radiation source 202 and / or the focusing optics 220 and the stage 216. Any suitable translation mechanism such as a conveyor system, rack and pinion system, etc. can be used.

  [0079] The translation mechanism 218 is preferably coupled to a controller to control the scanning speed at which the stage 216 and the line of radiation 222 move relative to each other. Further, translation of the stage 216 and the radiation line 222 relative to each other is preferably performed along a path that is perpendicular to the radiation line 222 and parallel to the upper surface 224 of the substrate 214. In a preferred embodiment, the translation mechanism 218 moves at a constant speed. This constant speed is preferably about 2 cm / s for a 35 micron wide line. In another embodiment, the translation of stage 216 and radiation line 222 relative to each other is not along a path perpendicular to radiation line 222.

  [0080] FIG. 2B is a schematic top view of the substrate and stage viewed along line 2B-2B 'of FIG. 2A. In a preferred embodiment, substrate 214 is a circular substrate having a diameter of 200 or 300 mm and a thickness of about 750 microns. Also, in a preferred embodiment, the radiation line 222 extends at least across the entire diameter or width of the substrate 214. Also, the radiation line 222 preferably has a width 228 of 3 to 500 microns. However, in the preferred embodiment, the radiation line 222 has a width 228 of about 35 microns. This width is measured at half the maximum intensity of radiation (also known as full width half maximum (FWHM)). In all embodiments, the length of the line is longer than its width. In the preferred embodiment, the line of radiation 222 traverses the substrate 214 linearly so that it is perpendicular to the direction of travel, i.e., this line is always kept parallel to the fixed line or chord 252 of the substrate. .

[0081] The preferred power density in the radiation line is from 10 kW / cm ² to 200 kW / cm ² , with a nominal range around 60 kW / cm ² . Radiating the entire surface of the substrate at these power densities is not easily achieved, but it is possible to scan across the substrate with a line of radiation having this intensity. For example, in an experiment scanned at 100 cm / s using a line of radiation with a peak power density of 70 kW / cm ² and a width of 400 microns, the ramp-up and ramp-down rates exceed 4 million ° C./s. The surface of the substrate was heated to about 1170 ° C.

  [0082] FIG. 3 is a schematic side view illustrating another apparatus 300 for heat treating a substrate according to another embodiment of the present invention. This embodiment shows another configuration of the converging optical system 320. In this embodiment, the converging optics 320 includes a lens 210 and one or more radiation guides, such as one or more optical fibers 308 and prisms 306. Other radiation guides such as directors, mirrors, diffusers can also be used.

  [0083] Radiation from the continuous wave electromagnetic radiation source 202 is directed to a prism 306 that redirects this radiation to one or more optical fibers 308. The radiation is transmitted through these optical fibers 308 to the lens 210 where it is focused onto the radiation line 222.

  [0084] It will be appreciated that many different combinations of the focusing optics 220 (FIG. 2A) or 320 described above may be used to transmit radiation from a continuous wave electromagnetic radiation source and converge it to a line of radiation. Will. A linear array of laser diodes can also be used as the radiation source. In addition, any suitable means for forming a uniform radiation distribution, such as a radiation diffuser, may be used.

  [0085] FIG. 4 is a flowchart 400 illustrating a method for heat treating the substrate 214 (FIG. 2A). In step 402, the apparatus described above with reference to FIGS. 2 and 3 is provided. Next, at step 404, the controller 226 (FIG. 2A) determines the scan speed at which the radiation line 222 (FIG. 2A) and the substrate move relative to each other. This determination is made based on the thermal recipe for processing the substrate, the characteristics of the substrate, the power of the continuous wave electromagnetic radiation source 202 (FIG. 2A), the width of the radiation line, the power density of the radiation line, and the like.

  [0086] The continuous wave electromagnetic radiation source 202 (FIG. 2A) emits continuous wave radiation 204 (FIG. 2A) at step 406. This radiation 204 is preferably collimated at step 408 into a collimated radiation beam 208 (FIG. 2A). This collimated radiation beam 208 (FIG. 2A) is focused at step 410 to a line of radiation 222 (FIG. 2A). Based on the preferred scanning speed, stage 216 (FIG. 2A) and line of radiation 222 (FIG. 2A) are translated relative to each other by translation mechanism 218 (FIG. 2A) at step 412. This translation is performed along a path that is perpendicular to the line of radiation 222 and parallel to the top surface of the substrate, such that the line of radiation traverses the entire substrate 214. In a preferred embodiment, translation mechanism 218 causes the radiation source and focusing optics to scan at about 2 cm / s relative to the top surface of the substrate.

  [0087] FIG. 5 is a graph 500 illustrating temperature versus time and depth on and through a substrate at a fixed point during a heat treatment performed based on the method described above with reference to FIG. A temperature axis 502 indicates a temperature from 0 to 1400 ° C. at a fixed point. Axis 504 indicates the depth from top surface 224 (FIG. 2B) into substrate 214 (FIG. 2B) at a fixed point. The axis 506 shows the time at a point after the start of scanning in seconds. Assume that the fixed point is located at 508.

  [0088] When the line of radiation 222 (FIG. 2B) scans across the top surface 224 (FIG. 2B) of the substrate 214 (FIG. 2B), it causes the heat or heat generated by it to be received by the line or string on the substrate. Before the line of radiation reaches the fixed point, the temperature of the fixed point is the ambient temperature, as indicated by reference numeral 516, on the top surface at the fixed point and the entire substrate cross section. As soon as the line of radiation reaches a fixed point of 508, the top surface temperature is about 1e6 C / s to a process temperature such as 1200 ° C. (or other desired temperature required for the process), as indicated by reference numeral 510. To ramp up. At the same time, the substrate acts as a heat sink, causing a rapid temperature drop as it moves away from the surface, as indicated by reference numeral 512. For example, as shown in FIG. 5, the temperature is about 200 ° C. at a point 0.04 cm from the upper surface point. Therefore, the heating effect is generally localized only on the top surface. This is very convenient because generally only the region near the top surface 224 (FIG. 2A) of the substrate needs to be heat treated.

  [0089] As the line of radiation moves beyond and beyond the fixed point, the temperature drops rapidly, as indicated by reference numeral 514. This is also because the substrate acts as a heat sink and spreads the heat on the top surface throughout the remaining cold substrate. This is not possible with conventional thermal systems such as RTP that heat the entire substrate simultaneously. This is because the entire substrate is at a high temperature so that heat cannot be easily dissipated to the cold area. Actually, the time scale shown in FIG. 5 cannot be compared with RTP. This is because the superimposed RTP graph becomes a substantially flat plane at 1100 ° C. and extends for about 1 second. One second is 400 times larger than the time period shown in FIG.

[0090] Therefore, unlike conventional processes, the present invention heats the surface of the substrate at a predetermined power density for a predetermined time (about 1 millisecond) so that the surface of the substrate is preferably less than 500 ° C. From the ambient temperature (T _A ) to a process temperature (T _P ) preferably higher than 700 ° C. At the same time, the temperature at a given depth from the surface (T _D ) is kept lower than the ambient temperature plus half of the process temperature minus the ambient temperature, ie, T _D ≦ T _A + (T _P −T _A ) / 2. This predetermined depth is about 10 times that depth, ie 10 times the maximum depth of the device structure in Si. For a typical Si substrate, the maximum depth of the device structure is about 3 microns.

  [0091] This transfer of heat to the majority of the substrate promotes homogeneous heat exposure because there is sufficient time for heat to diffuse from a locally strong heat absorbing region to a weak heat absorbing region. The effect of pattern density is comparable to RTP. However, the time scale is short enough to limit the heat transfer diffusion depth to a few microns rather than a few hundred microns thickness of the substrate as in RTP, thus reducing the total power requirement considerably. The Most of the substrate is not heated significantly, making it an ideal heat sink for temperature ramp down.

[0092] One problem with conventional laser annealing systems is that rapid heating of relatively small areas of the substrate causes stress-related defects. Therefore, experiments were performed to test whether the heat flux treatment of the present invention caused stress related defects in the substrate. The peak stress occurs near the maximum temperature, not the maximum temperature. If the radiation line is reasonably thin and the heating depth is reasonably shallow, the region of maximum thermal gradient can be displaced from the region of maximum temperature to increase the slip window and reduce defects. During this experiment, the sample was scanned at 20 cm / under a line of radiation with a peak power density of 60 kW / cm ² and a width of 400 microns. The present invention can displace the peak thermal gradient from the peak temperature, and can therefore form an ultra shallow junction (USJ) suitable for a 70 nm node with a 1 keV boron implant without incurring misalignment. Only typical implant-related defects were observed.

  [0093] FIG. 6 is a schematic side view illustrating an apparatus 600 for depositing a layer on a substrate according to another embodiment of the invention. The apparatus 600 is similar to the apparatus 200 shown in FIGS. 2A and 2B and the apparatus 300 shown in FIG. Elements that are the same as those shown in FIGS. 2A and 2B have the same reference numbers. Further, the apparatus 600 may be used to perform a deposition process such as CVD, ALD, etc.

  [0094] In addition to the elements described above in connection with FIGS. 2A and 2B, the apparatus 600 shows a reaction chamber 602 that contains a number of elements. At least one injector 604 is used to introduce or inject one or more gases 616 into the reaction chamber 602. The gas injector 604 preferably comprises one or more gas sources 612 (1)-(N), which are fluidly coupled to one or more gas inlets 608 of the gas manifold 606 by a duct 610. The gas injector 604 may be located at any suitable location within the reaction chamber 602. For example, the gas may be injected to the side of the reaction chamber and flow across the surface of the substrate perpendicular to the direction of relative movement between the line of radiation and the surface of the substrate, or the gas may be As shown, it may be implanted from above the substrate.

  [0095] In the embodiment shown in FIG. 6, continuous wave electromagnetic radiation is collimated by a collimator, redirected by a prism 306 towards the substrate, and then converged by a lens 210 into a line. However, it will be apparent that the converging optics 220 may include any suitable converging optics that can focus the lines of energy on the top surface 224 of the substrate 214, as described above. Furthermore, it will be clear that the focusing optics may be arranged outside the chamber, in which case the radiation is passed through the transparent window into the chamber. Further, the chamber and / or gas source may take any suitable shape and / or configuration.

[0096] FIG. 7 is a flowchart 700 illustrating a method for depositing one or more layers on a substrate according to the embodiment of the invention shown in FIG. At 702, the substrate 214 (FIG. 6) is placed in the reaction chamber 602 (FIG. 6). One or more gases 616 (FIG. 6), such as ammonia (NH ₃ ) and dichlorosilane (DCS) containing the atoms or molecules required for layer 614 (FIG. 6), in 704, substrate 224 (FIG. 6). It is introduced into the reaction chamber 602 (FIG. 6) to be accommodated.

  [0097] As described below, a predetermined speed for translating radiation line 222 (FIG. 6) is determined at 706. This predetermined speed is based on a number of factors such as the thermal recipe for processing the substrate, the characteristics of the substrate, the power of the continuous wave electromagnetic radiation, the width of the radiation line, the power density in the radiation line, etc. . In a preferred embodiment, this predetermined speed is about 2 cm / s.

  [0098] Next, at 708, continuous wave electromagnetic radiation is emitted from the continuous wave electromagnetic radiation source 202 (FIG. 6), as described above. Continuous wave electromagnetic radiation is preferably collimated at 710 by a collimator 206 (FIG. 6).

  [0099] The continuous wave electromagnetic radiation is then focused at 712 to a line of radiation 222 (FIG. 6) extending across the top surface 224 of the substrate (FIG. 6). In the preferred embodiment, the line width of radiation 228 (FIG. 6) is about 35 microns wide. The line of radiation is then translated at 714 relative to the surface at the determined constant predetermined speed. This translation is performed by the translation mechanism 218 (FIG. 6) under the control of the controller 226 (FIG. 6).

  [0100] At least one gas 616 reacts with the combination of the introduced gas (es) 616 (Fig. 6) and the heat generated by the radiation lines, and a layer 614 (Fig. 6) is deposited. This reaction may be a chemical reaction between gases, decomposition of one or more gases, and the like. Undesirable reaction byproducts are flushed from the reaction chamber at 716.

  [0101] This process is repeated until a layer 614 (FIG. 6) having a predetermined thickness is formed on the upper surface 224 (FIG. 6) of the substrate 214 (FIG. 6). The predetermined scanning speed is preferably higher than the speed required for the heat flux annealing described above, because many scans are required to construct the film / layer. Typically, each deposited layer is 8 to 10 inches. The required film / layer varies from 20 Å of tunnel oxide used for flash memory to 1500 の for spacer applications. Therefore, preferred scanning speeds are generally in the range of a few cm / s to about 1 m / s. The preferred line width 228 (FIG. 6) is the same as described above.

  [0102] A chemical reaction controls the temperature of the substrate surface by adjusting continuous wave electromagnetic radiation or radiation lines, and controls the amount and / or ratio of gas (s) introduced into the reaction chamber. Furthermore, it is controlled by controlling the pressure in the reaction chamber.

  [0103] The above-described method can heat the substrate surface to an appropriate temperature within 1 millisecond. Furthermore, since the gas near the surface is heated by the radiation, the gas reaction occurs only at or near the surface. Heating is very short as the radiation lines continue to move, so only the gas near the surface reacts. Since the gas away from the surface never gets hot, unwanted gas phase reactions are prevented. This allows multiple gases to be injected simultaneously without incurring an undesired gas phase reaction away from the substrate surface.

  [0104] In a preferred embodiment, the method described above is performed at a pressure from a few Torr up to a pressure above atmospheric pressure, with atmospheric pressure being preferred. FIG. 8 shows the results of the simulation, which shows that sufficient decomposition of the reactants can occur at this pressure on this short time scale. Also, in a preferred embodiment, the temperature of the radiation line depends on the film / layer being deposited, but is generally in the range of 600 to 900 ° C.

  [0105] FIG. 8 is a graph 800 showing the results of a Monte Carlo simulation for decomposing silane at 850 ° C. and 740 Torr according to the embodiment of the present invention shown in FIG. This simulation at low pressure replicates the deterministic model published by Chemtronics 1 (1986) 150 by Meyerson, Scott and Tui, incorporated herein by reference.

[0106] This graph 800 shows that a typical CVD gas, such as dichlorosilane (DCS), decomposes into the molecules necessary to deposit on the substrate surface. Decomposition occurs at a temperature of 740 Torr and 850 ° C., which is approximately atmospheric pressure. The total time at which decomposition occurs at this temperature and pressure is about 6 × 10 ⁻⁴ seconds. This temperature and scan speed can only be achieved with the present invention. This is because conventional methods cannot achieve such a high temperature within such a short time while giving sufficient time for the reaction to occur.

  [0107] The apparatus and method for depositing a layer on a substrate exhibits a number of advantages. For example, the thermal history of the process is low due to the short time spent at high temperatures.

  [0108] Furthermore, since the radiation lines only apply heat to the surface of the substrate, the gas reaction only occurs on the surface. This leads to a reduction in vapor phase transport restrictions. This also causes a drop in the gas phase reaction away from the surface, avoiding the formation of unwanted particles on the substrate surface. Furthermore, this method can be performed at atmospheric pressure, resulting in fast decomposition of reactants such as silane, thereby allowing high deposition rates.

  [0109] FIG. 9A is a side view illustrating yet another apparatus 900 for heat treating a substrate according to yet another embodiment of the present invention. The device 900 is similar to the device 200 shown in FIGS. 2A and 2B, the device 300 shown in FIG. 3, and the device 600 shown in FIG. Elements having similar names are similar, but the differences will be described below.

  [0110] The apparatus 900 includes a continuous wave electromagnetic radiation module 902, a stage 904 configured to receive a substrate 906, and a translation mechanism for moving the stage 904 and the continuous wave electromagnetic radiation module 902 relative to each other (FIG. Not shown). The continuous wave electromagnetic radiation module 902 includes at least one continuous wave electromagnetic radiation source 908 (A + B) and an optical system 910 (A + B) disposed between the continuous wave electromagnetic radiation source 908 (A + B) and the substrate 906. It is preferable to include. As described above, the substrate 906 can be a single crystal silicon substrate, a silicon-on-insulator (SOI), silicon germanium or an alloy thereof, a glass or quartz substrate with a silicon layer used to manufacture thin film transistors (TFTs), A suitable substrate such as.

  [0111] The continuous wave electromagnetic radiation source 908 (A + B) is similar to the continuous wave electromagnetic radiation source 202 described with reference to FIG. 2A. In a preferred embodiment, the continuous wave electromagnetic radiation source 908 (A + B) generates up to 9 kW of radiation, which is focused by the optical system 910 (A + B) into a line of radiation on the substrate surface. Is 30 microns wide and at least 300 mm long. In a preferred embodiment, the continuous wave electromagnetic radiation source 908 (A + B) also includes 15 laser diode modules 908 (A) on one side of the device 900 and 16 laser diode modules 908 on the other side of the device 900. (B) is included. The laser diode module 908 (A) is confused with the laser diode module 908 (B) as shown in FIG. 9B, that is, the radiation emitted from the laser diode module 908 (A) Interdigitate with the radiation emitted from 908 (B). Also, in the preferred embodiment, each set of opposing laser diode modules is electrically coupled to one or more power supplies 916. Alternatively, each single laser diode module or combination of laser diode modules may be energized by one or more power sources. A power supply 916 is electrically coupled to the computer system 914.

  [0112] In a preferred embodiment, as is well understood in the art, a cooling fluid, such as water, is circulated into the continuous wave electromagnetic radiation source 908 (A + B) to keep it cool.

  The optical system 910 (A + B) includes a converging optical system 910 (A) similar to the converging optical system described above, and an interleave combiner 910 (B). The interleave synthesizer 910 (B) is described below with reference to FIG. 10, while the converging optical system 910 (A) is described below with reference to FIG.

  [0114] The apparatus 900 also preferably includes a detection module 912 (A + B + C) coupled to the computer system 914, as described below with reference to FIG.

  [0115] The computer system 914 includes instructions and / or procedures for performing the methods described below with reference to FIG.

  [0116] Figure 9C is a rear view of yet another apparatus 950 for heat treating a substrate 962 according to yet another embodiment of the present invention. In this embodiment, the line of continuous wave electromagnetic radiation does not extend across the entire width of the substrate 962, but rather only extends across a portion of the diameter or width of the substrate. In other words, the line of continuous wave electromagnetic radiation has a length 960 that is less than the diameter or width 968 of the substrate.

  [0117] In use, the line of continuous wave electromagnetic radiation is preferably scanned more than once across the substrate surface. Each successive scan is preferably superimposed on the previously scanned area so that the thermal exposure uniformity along the length of the line is improved. A line shifting mechanism 966 is used to shift the line of continuous wave electromagnetic radiation and the substrate along the length of the line, ie substantially collinear to the length of the line and substantially perpendicular to the scanning direction. Shift to. This superposition averages the thermal exposure of all points on the substrate, similar to the rotational averaging used for RTP.

  [0118] The line shift mechanism 966 preferably translates the continuous wave electromagnetic radiation module (radiation source 954 and lens 956) to translate the line of continuous wave electromagnetic radiation relative to the substrate. Alternatively, stage 964 may be translated relative to the line, or both the line and stage may be translated relative to each other.

  [0119] Further, in such an embodiment, only a small number of laser diode modules 966 are required because the line length 960 of continuous wave electromagnetic radiation only needs to extend across a portion of the diameter or width of the substrate 962. . For example, two laser diode modules may be interleaved between three opposing laser diode modules 966.

  [0120] FIG. 10 is a schematic side view of the interleave combiner 910 (B) shown in FIGS. 9A and 9B. The interleave synthesizer 910 (B) forms part of the optical system 910 (A + B) and is used to improve the fill ratio of emitted continuous wave electromagnetic radiation, as described below. In a preferred embodiment, the interleave synthesizer 910 (B) is an interleaved prism assembly.

  [0121] Further, the preferred embodiment of the apparatus 900 (FIGS. 9A and 9B) includes a microlens (not shown) to collimate the fast axis output of each laser diode module 908 (A) or 908 (B). ing. In this preferred embodiment, the pitch 1002 of each laser diode module is 2.2 mm, while the aperture 1004 of the fast axis collimating microlens is 0.9 mm. The fill ratio is the area exposed to continuous wave electromagnetic radiation divided by the total area of the continuous wave electromagnetic radiation module. Thus, for example, if the lens system provides a beam footprint that is 1 cm long by 900 microns wide, and if the pitch of each laser diode module is 2.2 mm, then the fill ratio is 900 microns / 2.2 mm or 41%, ie, only 41% of the emission area of a continuous wave electromagnetic radiation module actually emits continuous wave electromagnetic radiation, while 59% of the space or area of the surface of the laser module is dark. This dark area is 1 cm long by 1.3 mm wide (2.2-0.9). This results in a substantially empty area where there is no continuous wave electromagnetic radiation.

  [0122] To improve optical performance, the fill ratio is preferably increased by the interleave combiner 910 (B), thus requiring a smaller series of subsequent lenses 910 (A + B) (FIGS. 9A and 9B) And In the preferred embodiment, interleave synthesizer 910 (B) doubles the fill ratio. For example, continuous wave electromagnetic radiation output from the fourth and fifth laser diode modules is interleaved between continuous wave electromagnetic radiation emitted from the second and third laser diode modules, as shown in FIG. Therefore, the power output is a compression of 5 laser diode bars into the space of 3 laser diode bars. This facilitates subsequent beam stretching and convergence, allowing a reasonably high power density to be obtained.

  [0123] In a preferred embodiment, the interleaved synthesizer 910 (B) uses a multilayer dielectric mirror in a suitable optical glass such as BK7 or fused silica to improve reflection at the wavelength of continuous wave electromagnetic radiation. Yes.

  [0124] FIG. 11 is a detailed cross-sectional side view of the converging optical system 910 (A) and the detection module 912 (A + B + C). The purpose of the converging optics 910 (A) is to convert continuous wave electromagnetic radiation emitted from the continuous wave electromagnetic radiation source 908 (A + B) (FIGS. 9A and 9B) into a line of continuous wave radiation on the surface of the substrate 906. To converge. In a preferred embodiment, the converging optics 910 (A) includes a series of seven lenses, designated AG. It is preferable that all the lenses AG are cylindrical lenses having a spherical shape or a planar shape. Such a cylindrical lens having a spherical shape is selected because it is relatively easy to manufacture and cheaper than a cylindrical lens having a non-spherical shape. However, in another embodiment, a small number of non-spherical lenses, or cylindrical lenses having a non-spherical shape, can be replaced with seven cylindrical lenses having the illustrated spherical or planar shape. Furthermore, apart from converging to the line of continuous wave electromagnetic radiation, the overall cylindrical lens significantly reduces optical aberrations.

  [0125] Also, in a preferred embodiment, lens A is an extension lens having an optically substantially flat entrance side and a cylindrical exit side. The stretching lens is used to stretch the continuous wave electromagnetic radiation condensed by the interleave synthesizer 910 (B) (FIGS. 9A and 9B) and then converge by the remaining focusing lenses BG. For example, in a preferred embodiment, the beam of continuous wave electromagnetic radiation is stretched to 20 mm wide and the fast axis divergence is reduced to less than 0.1 °. Narrow line widths can be obtained with reduced divergence. Furthermore, the wide beam allows an acceptable working distance for a numerical aperture of 0.4. When converged by the remaining lenses BG, the resulting beam is approximately 30 microns at the surface of the substrate 906.

  [0126] The last lens G has opposing entrance and exit sides that are optically substantially flat and serves only as a quartz window to separate the wafer environment from the lens environment. This also shifts the focus slightly away from the radiation source.

  [0127] In a preferred embodiment, the distance from the window to the substrate is about 8 mm. Moreover, in preferable embodiment, the lens AG has the following prescription data.

但し、半径及び厚みは、ミリメーターである。「表面」は、レンズの表面を指し、ここで、「ｅｎｔｒｙ」は、レンズの入口面を指し、「ｅｘｉｔ」は、レンズの出口面を指す。材料は、レンズが作られた材料を指す。「Ｘ」、「ＡＸ」及び「ＳＸ」データは、アパーチャーの形状、即ち長方形又は楕円を指し、ここで、「Ｘ」は、特殊なアパーチャーデータを意味し、「Ｓ」は、手前のカラムのアパーチャー半径数が、指定されるのではなく、計算されることを意味し、「Ａ」は、アパーチャー絞り、基本的には、線が通過できねばならない窓を意味する。例えば、レンズＡ（図１１）の入口面「Ａ_{ｅｎｔｒｙ}」は、半径が０ミリメーター、即ち平坦であり、厚みが３ｍｍであり、アパーチャー半径が４ｍｍであり、長方形の形状で、且つＢＫ７ガラスで作られている。前記チャートは、Ｓｉｎｃｌａｉｒ Ｏｐｔｉｃ’ｓ ＯＳＬＯ（登録商標）レイトレーシングソフトウェアを使用して作成されたものである。

However, the radius and thickness are millimeters. “Surface” refers to the surface of the lens, where “entry” refers to the entrance surface of the lens and “exit” refers to the exit surface of the lens. Material refers to the material from which the lens was made. “X”, “AX” and “SX” data refers to the shape of the aperture, ie, a rectangle or ellipse, where “X” means special aperture data and “S” is the previous column. It means that the aperture radius number is calculated rather than specified, and “A” means the aperture stop, basically the window through which the line must pass. For example, the entrance surface “A _entry ” of the lens A (FIG. 11) has a radius of 0 millimeter, that is, flat, a thickness of 3 mm, an aperture radius of 4 mm, a rectangular shape, and BK7 glass. It is made. The chart was created using Sinclair Optic's OSLO® ray tracing software.

  [0128] Lens A-G is preferably held in position in converging optical system 910 (A) by frame 1102. In a preferred embodiment, the frame 1102 is made of machined stainless steel. Also, the frame 1102 is misaligned during use, and this misalignment simply shifts the focal line toward or away from the substrate surface (or moves laterally). Preferably includes some tolerances to ensure a sound system. This focus shift is adjusted by an auto-convergence system, as described below in connection with FIGS. 14A-D. Further, during preferred use, purge gas is pumped to the frame and pumped through the gas injector 1104 to the inter-lens space 1108 to keep the lens cool. The purge gas is preferably nitrogen at room temperature (to avoid condensation on the lens).

  [0129] The detection module 912 (A + B + C) includes at least one reflected power detector 912 (A), at least one emitted power detector 912 (B), and / or at least one beam splitter 912 (C). Is preferred. The emitted power detector 912 (B) is configured to detect a portion of the emitted continuous wave electromagnetic radiation emitted from the continuous wave electromagnetic radiation source 908 (A + B) (FIGS. 9A and 9B), while the reflected power detector 912 (A) is configured to detect a portion of the reflected continuous wave electromagnetic radiation reflected from the surface of the substrate 906. The emitted power detector 912 (B) monitors the output of the continuous wave electromagnetic radiation source, while the reflected power detector 912 (A) reflects, reflectivity, emission rate, energy absorbed by the substrate, and / or the substrate. Used to detect the temperature of The emission power detector 912 (B) and the reflected power detector 912 (A) are suitably manufactured by Hamamatsu.

  [0130] The beam splitter 912 (C) reflects a portion of the emitted continuous wave electromagnetic radiation incident on its first substantially planar surface toward the emitted power detector 912 (B) by emitting continuous wave. It is configured to sample a portion of the electromagnetic radiation. In a preferred embodiment, the second flat surface of beam splitter 912 (C), as opposed to its first flat surface, is used to convert continuous wave electromagnetic radiation reflected from the surface of the substrate into reflected power. Reflected toward the detector 912 (A). The beam splitter is preferably disposed between a continuous wave electromagnetic radiation source 908 (A + B) and a stage 904 (FIGS. 9A and 9B). The beam splitter 912 (C) is preferably covered with an antireflection coating such as MgF. In use, beam splitter 912 (C) reflects or samples less than 1% of continuous wave electromagnetic radiation emitted by continuous wave electromagnetic radiation source 908 (A + B).

  [0131] In use, the ratio of the detected emitted power to the detected reflected power provides a measure of absorption at the substrate. Absorption is where radiant energy is absorbed and converted to other forms of energy, such as heat, and then re-radiated at longer wavelengths based on Planck's law for thermal radiation.

  [0132] In a preferred embodiment, the emitted power detector 912 (B) and the reflected power detector 912 (A) detect 810 nm continuous wave electromagnetic radiation. Also, in a preferred embodiment, at least one detector 912 (A) is configured as a temperature detector for detecting the temperature of the substrate in the line of continuous wave electromagnetic radiation. In order to detect temperature, the temperature detector detects continuous wave electromagnetic radiation at wavelengths other than 810 nm, for example 1500 nm. This is accomplished by placing a filter 1106 between the reflected continuous wave electromagnetic radiation and the detector 912 (A). This filter 1106 allows only continuous wave electromagnetic radiation having a wavelength other than 810 nm to reach the detector 912 (A), which acts as an optical pyrometer, and the detected signal is an emission signal. And is configured to ensure that there is no reflection from the light source. In other words, only reflected radiation has a wavelength other than 810 nm. In a preferred embodiment, the filter is configured to allow optical pyrometer operation from 900 nm to 2000 nm, with 1500 nm being the preferred wavelength. However, this temperature measurement is sensitive to changes in the release rate.

  [0133] The reflected power detector 912 (A) and the emitted power detector 912 (B) also provide stray radiation that may be scattered into the optical system due to the non-zero reflectivity of the lens in the device. A pinhole aperture is preferably included to maximize the detected signal while minimizing acquisition.

  [0134] In a preferred embodiment including 15 and 16 opposing laser diode modules, 15 pairs of reflected power detector 912 (A) and emitted power detector 912 (B) are preferably provided. Every other reflected power detector 912 (A) is preferably configured as a temperature detector, as described above.

  [0135] In another embodiment, a reflector 1110 is disposed between the converging optics 910 (A) and the substrate 906. The reflector 1110 is configured to reflect radiation reflected from the surface of the substrate back to a line of continuous wave electromagnetic radiation. In a preferred embodiment, the reflector 1110 is a cylindrical mirror whose center of curvature is located at the focal point of the lens.

  [0136] FIG. 12 is an isometric view showing the prototype of the apparatus 900 shown in FIGS. 9A and 9B. As is apparent, a substrate such as a semiconductor wafer is placed on the stage 904 in the chamber 1202. A continuous wave electromagnetic radiation module 902 is coupled to the chamber 1202. Further, a translation mechanism such as translation mechanism 218 (FIG. 2) moves stage 904 relative to continuous wave electromagnetic radiation module 902 as indicated by arrow 1206. Several electronic devices, such as computer system 914 (FIGS. 9A and 9B), are housed in housing 1210. The apparatus 900 is preferably coupled to a factory interface 1208 for transferring the substrate 906 to or from the apparatus 900.

  [0137] FIG. 13 is a flowchart of a method 1320 for controlling a thermal process. When the method 1320 is started at step 1322, the substrate is oriented on the stage at step 1323 so that the subsequent scanning direction can optimize the thermal process. This is because different substrate orientations have different mechanical properties and yield strength can be higher in one direction than in another. In general, a notch is provided in the substrate to indicate the direction of crystallization. The surface of the substrate 904 (FIGS. 9A and 9B) is optionally coated with a thermal enhancement layer at step 1324. This thermal enhancement layer is made by providing a material with high absorption properties, for example doped polysilicon or silicon nitride, on the oxide buffer layer and / or a material with antireflection properties Made from. This thermal enhancement layer serves to create insensitivity to the state of the substrate surface. For example, if the surface of the substrate is highly reflective or non-uniform, this thermal enhancement layer helps to maintain a substantially uniform thermal exposure of the substrate.

[0138] The substrate is then irradiated at step 1326 with a line of continuous wave electromagnetic radiation emitted from the continuous wave radiation module 902 (FIGS. 9A and 9B), thereby irradiating the surface of the substrate with a predetermined power density. Heat for a predetermined length of time. The predetermined power density is preferably higher than 30 kW / cm ² (preferably 100 kW / cm ² ), and the predetermined time is preferably 100 microseconds to 100 milliseconds (preferably about 1 millisecond). This heats the surface of the substrate from an ambient temperature below about 500 ° C. to a process temperature above about 700 ° C. The temperature at a given depth from the surface, such as 10 times the maximum depth of the device structure in Si, is kept lower than the ambient temperature plus half of the process temperature minus the ambient temperature.

  [0139] As described above, the line of continuous wave electromagnetic radiation may extend across the entire surface of the substrate or may extend across a portion thereof.

  [0140] In an embodiment having a reflector 1110 (Figure 11), reflected or scattered light directed at the reflector is reflected back toward the line of radiation at step 1328.

  [0141] The emitted power is then measured by the emitted power detector (s) 912 (B) at step 1330 and transmitted to the computer system 914 (FIGS. 9A and 9B). The reflected power is then measured by reflected power detector 912 (A) at step 1332 and transmitted to computer system 914 (FIGS. 9A and 9B). The computer system 914 (FIGS. 9A and 9B) compares the reflected power with the emitted power at step 1334 and controls the power supplied to the continuous wave electromagnetic radiation source accordingly at step 1336. For example, a continuous wave electromagnetic radiation source may heat different substrates differently with the same emitted power. The computer system controls the power of the power supply 916 (FIGS. 9A and 9B), which in turn controls individual laser diode modules, sets of laser diode modules, or all laser diode modules. May be controlled simultaneously. In this way, individual laser diode modules or combinations of laser diode modules (or zones) may be controlled in real time.

  [0142] In another embodiment, an adjustment mechanism (described below with reference to FIGS. 14A-D) adjusts the height of the stage in step 1335 in real time based on the measured emitted and reflected power. can do. Adjusting the height of the stage allows the surface of the substrate to be focused and removed, thereby controlling the power density of the line of continuous wave electromagnetic radiation at the surface of the substrate independently of the total power. be able to.

  [0143] Next, in step 1338, the measured reflected and emitted power may be used to calculate substrate reflectivity, substrate emissivity, energy absorbed by the substrate, and / or substrate temperature. . The reflectance is proportional to the reflected power divided by the emitted power. The heat emission signal from the wafer is optically measured by an optical system and an interleaved synthesizer at wavelengths longer than the continuous wave electromagnetic radiation source.

  [0144] Similarly, temperature is proportional to the absorbed power equal to the radiated power minus the reflected power. The calculated true temperature is derived from the difference between the reflected and emitted power that has undergone detector calibration. The exact method is similar to existing emission rate compensation configurations used for RTP, as is well understood in the art. These calculations are described in U.S. Patent Nos. 6,406,179, 6,226,453, 6,183,130, 6,179,466, 6,179,465, 6, 151,446, 6,086,245, 6,056,433, 6,007,241, 5,938,335, 5,848,842, 5,755 511, 5,660,472, all of which are hereby incorporated by reference.

  [0145] The thermal enhancement layer, if provided, is typically removed at step 1340.

  [0146] Furthermore, in another embodiment, thermal exposure uniformity can be improved by overscanning. Overscan uses lines of radiation that are longer than the width of the substrate. After each scan, the line of radiation is slightly shifted along its length in step 1341, improving the overall thermal uniformity if the slow axis uniformity decreases with time. Shifting the line effectively averages the thermal exposure of the substrate.

  [0147] FIG. 14A is a partial cross-sectional side view of the automatic focusing mechanism 1400, and FIG. 14B is a top view of the tool substrate and stage 1414 shown in FIG. 14A along the line 14B-14B '. The automatic focusing mechanism 1400 is used to focus the line of continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation module 902 onto the top surface of the substrate.

  [0148] Convergence mechanism 1400 preferably includes a number of photodiode sensors 1408 embedded in stage 1414. Each of the photodiode sensors 1408 is electrically coupled to the controller 1404. In the preferred embodiment, five photodiode sensors 1408 are provided, but in general, as described below, the pitch (around the X axis), roll (around the Y axis) and height (on the Z axis). At least three photodiode sensors 1408 must be provided to account for changes in The photodiode sensor 1408 is used during system setup to confirm that the top surface of the tool substrate is at the focal plane of the continuous wave electromagnetic radiation source.

  [0149] In a preferred embodiment, a center photodiode sensor is used to set the height of the stage, and the left and right photodiode sensors of this center photodiode sensor are the tilt or roll of the stage (around the Y axis). Used to substantially eliminate rotation). The leading and trailing photodiode sensors are used to eliminate the stage tip or pitch (rotation about the X axis). The adjustment is based on maximizing the signal of the photodiode sensor.

  [0150] For such confirmation, it is necessary to load the tool substrate 1412 onto the stage 1414 by the substrate loading robot. The tool substrate 1412 has a pinhole aperture 1410 directly above each photodiode sensor 1410. These pinhole apertures are smaller in diameter than the line width and at best are the width of the focal point.

  [0151] The controller 1404 is also coupled to an adjustment mechanism 1402. This adjustment mechanism 1402 raises or lowers the stage 1414 (along the Z axis) and adjusts the pitch as required by the controller to focus the line of continuous wave electromagnetic radiation on the surface of the tool substrate ( Configured around the X axis) or to adjust the roll (around the Y axis).

  [0152] In a preferred embodiment, the adjustment mechanism 1402 comprises at least three rack and pinion drives 1406, each of which is rotatably coupled to the stage at one end of a rack and pinion drive screw. In use, if all three rack and pinion drives 1406 are raised or lowered together, the stage 904 is also raised or lowered. However, if the individual rack and pinion drive 1406 is lowered or raised, the stage pitch and roll can be adjusted. However, it will be apparent that any suitable adjustment mechanism 1402 may be used.

  [0153] The controller 1404 is also coupled to a translation mechanism 218 for moving the continuous wave electromagnetic radiation source 908 (A + B) and the stage 904 relative to each other.

  [0154] FIG. 14C is a flowchart 1420 illustrating a method for automatically converging lines of continuous wave electromagnetic radiation onto the top surface of a substrate. When the method begins at step 1422, a tool substrate 1412 (FIG. 14A) is placed on the stage at step 1424. The continuous wave electromagnetic radiation source 908 (A + B) then provides radiation to a first photodiode sensor 1408 (FIG. 14A), eg, a central photodiode located below the central portion of the tool substrate, at step 1426. . This first photodiode sensor provides a measurement that is used to adjust the absolute height. The first photodiode sensor measures the intensity of continuous wave electromagnetic radiation in step 1428 and transmits this intensity to the controller 1404 (FIG. 14A). The controller then instructs the adjustment mechanism 1402 (FIG. 14A) to adjust the height of the stage at step 1430. This height is adjusted by raising or lowering the stage 904 (FIG. 14A) along the Z axis with an adjustment mechanism until the line of light is at the focal point at the aperture in front of the first photodiode sensor.

  [0155] The controller then commands the translation mechanism in step 1431 to translate the continuous wave electromagnetic radiation module and stage relative to each other so that the next photodiode is aligned with the line of radiation. The next photodiode sensor 1408 (FIG. 14A) is then illuminated in step 1432. The intensity of continuous wave electromagnetic radiation measured at the photodiode sensor is measured at step 1434 and transmitted to the controller 1404 (FIG. 14A). The controller then instructs the adjustment mechanism 1402 to adjust the stage pitch and / or roll by tilting the stage about the X and Y axes, if necessary, in step 1436 so that the line of light is Ensure that this photodiode sensor is in focus. The controller then determines in step 1438 whether the configuration is complete, i.e., whether measurements have been obtained from all photodiode sensors. If this method is not complete (1438-No), the radiation module and stage are translated relative to each other until the next photodiode is aligned with the line of radiation, the next photodiode is illuminated in step 1432, and then This method is repeated until the line of light is in focus at all points along the surface of the substrate. If the method is complete (1438—Yes), the process is complete at step 1440.

  [0156] This process may be iterative. Alternatively, a full scan in the Z direction can be performed on all detectors before adjustment. In this way, the plane of the tool wafer becomes known to the system relative to the focal plane. At this time, the three servos make appropriate adjustments to match the two planes.

  [0157] In a preferred embodiment, after the height has been adjusted, if the stage is tilted or rolled, use the left and right photodiode sensors to focus them at different heights, Eliminate tilt or roll. When the tilt or roll is eliminated, the substrate is moved to the leading edge photodiode sensor and another through focus data set is collected. The pitch or chip is zeroed when the center photodiode sensor and the leading edge photodiode sensor have the same transfocal data at the same height. A trailing edge photodiode sensor is used to confirm that the stage is truly horizontal.

  [0158] FIG. 14D is a graph 1450 showing the measured energy density (normalized signal) 1454 and the height of the stage at the aperture 1410 (FIG. 14A), with zero being the best focus. The transfocal point is shown as 1452. As is apparent, the energy density is highest at 1456 when the line of light is converged to the aperture. Also shown is the spot size, ie, the area where energy is diffused. The spot indicates where the image of the laser diode is in the focal plane. To simplify the analysis, this is the reason why a rotationally symmetric lens is assumed, i.e. a spot is used for the analysis but no line is used. In practice, however, the spots are preferably long lines with a spreading width.

  [0159] Thus, the convergence mechanism 1400 (FIG. 14A) ensures good focus for all substrates. It also allows the thermal recipe to change the line width without having to rely on movable optics, i.e. adjusting the stage height without adjusting the total power output by the continuous wave electromagnetic radiation source By doing so, the power density on the surface of the substrate can be adjusted independently.

  [0160] Furthermore, any of the systems, devices or methods described above may be used for implantation devices or plasma doping (PLAD). The method described above may also be used for back end thermal processes that require the use of a high power continuous wave electromagnetic radiation laser source operating at or near UV. If such a trailing thermal process is copper reflow, the wavelength generated by such a laser source is strongly absorbed by most materials including copper.

  [0161] Furthermore, the apparatus and method described above may be used for isotropic etching and / or ashing, such as etching photoresist from the substrate surface. Such isotropic etching and / or ashing does not require the use of a plasma and therefore does not cause any plasma damage related problems such as those caused by hot electrons.

  [0162] Additionally, the apparatus and method described above may be used for all flat panel anneals. Current laser recrystallization processes raster scan the laser spot across the surface of the flat panel. Recrystallization generally proceeds rapidly and thus speed and overscan become important process control variables. However, using the present invention, recrystallization proceeds from a wide continuous front and large particles are formed due to the low degree of freedom for recrystallization. However, in the present invention, recrystallization occurs only in front of and behind the line of radiation, and scanning speed is an important variable.

  [0163] Furthermore, the apparatus and method described above can be used to improve pn junction leakage by activating across the ac / Si interface, where the amorphous-crystal interface is ac. May be. The problem with current annealing methods is that not all defects at the original ac interface are annealed. These defects are end-of-range (EOR) defects for amorphized implantation. If these defects remain at the junction (depletion region) where the voltage must be sustained, the regular array assumption for silicon will not be complete and leakage will occur. However, in the present invention, the thermal exposure can be made long enough to move the junction deeper than the EOR defect. Pulsed lasers are not well suited to do this because the short pulse length is less than microseconds and no diffusion can occur.

  [0164] The foregoing descriptions of specific embodiments of the present invention are intended to be illustrative and explanatory. These are not exhaustive and are not intended to limit the invention to the precise form disclosed herein. Obviously, many changes and modifications are possible in light of the above-described technology. For example, although one beam splitter has been described to reflect continuous wave electromagnetic radiation toward both the reflected power detector 912 (A) and the emitted power detector 912 (B), more than one beam splitter is used. May be. The principles of the present invention and their practical application are best described so that those skilled in the art can utilize the present invention and various embodiments with various modifications to suit the particular use intended. In order to do so, the embodiment has been selected and described. Furthermore, the order of the steps in the method is not necessarily intended to occur in the sequence. The invention is defined by the claims and their equivalents. Furthermore, the above references are incorporated herein by reference.

DESCRIPTION OF SYMBOLS 200 ... The apparatus which heat-processes a board | substrate, 201 ... Continuous wave electromagnetic radiation module, 202 ... Continuous wave electromagnetic radiation source, 204 ... Radiation, 206 ... Collimator, 208 ... Collimated radiation , 210 ... lens, 216 ... stage, 214 ... substrate, 218 ... translational movement mechanism, 220 ... converging optical system, 222 ... radiation line, 224 ... top surface of substrate 226 ... Controller, 228 ... Line width, 252 ... String, 300 ... Another device for heat-treating the substrate, 306 ... Prism, 308 ... Optical fiber, 320 ... Convergence Optical system, 600... Device for depositing a layer on a substrate, 602... Reaction chamber, 604... Injector, 606... Gas manifold, 608. 610 ... duct, 612 ... gas source, 614 ... layer, 900 ... further apparatus for heat treating the substrate, 902 ... continuous wave electromagnetic radiation module, 904 ... stage, 906 ... Substrate, 908 ... Continuous wave electromagnetic radiation source, 908 (A) ... Laser diode module, 908 (B) ... Laser diode module, 910 ... Optical system, 914 ... Computer System, 916 ... Power supply, 954 ... Radiation source, 956 ... Lens, 962 ... Substrate, 966 ... Line shift mechanism

Claims (9)

A stage configured to receive a substrate;
A continuous wave electromagnetic radiation source disposed adjacent to the stage, the continuous wave electromagnetic radiation source configured to emit continuous wave electromagnetic radiation along a path toward the substrate;
A series of lenses disposed between the continuous wave electromagnetic radiation source and the stage configured to focus the continuous wave electromagnetic radiation onto a line of continuous wave electromagnetic radiation on the upper surface of the substrate. A series of lenses,
A translation mechanism configured to translate the stage and the line of continuous wave electromagnetic radiation relative to each other in the width direction of the line of continuous wave electromagnetic radiation;
An adjustment mechanism configured to move the continuous wave electromagnetic radiation source and the stage toward each other and to adjust the pitch and roll of the stage ;
A detection module disposed in the path and configured to detect continuous wave electromagnetic radiation;
A computer system coupled to the detection module, wherein the adjustment mechanism is controlled based on measurements obtained by the detection module to hold the line of continuous wave electromagnetic radiation at a focal point on the surface. A heat treatment apparatus equipped with a computer system. The heat treatment apparatus according to claim 1, wherein the continuous wave electromagnetic radiation has a line width of 500 microns or less and a power density of 30 kW / cm ² or more. Wherein the detection module is positioned between the series of lenses, a heat treatment apparatus according to claim 1 or 2. The thermal processing apparatus of claim 1, wherein the power density of the continuous wave electromagnetic radiation lines on the upper surface of the substrate is controlled by holding the continuous wave electromagnetic radiation lines at a focal point on the surface. The adjusting mechanism for adjusting the height of the stage, a heat treatment apparatus according to claim 1 or 2. The heat treatment apparatus according to claim 5 , further comprising at least three photosensors embedded in the stage and coupled to the computer system for adjusting the pitch and roll of the stage . A stage configured to receive a substrate;
A continuous wave laser source configured to emit continuous wave laser radiation along a path toward the substrate;
A series of lenses disposed between the laser source and the stage, the series of lenses configured to focus the laser radiation onto a beam of continuous wave laser radiation on the surface of the substrate; ,
A translation mechanism configured to translate the stage and the beam line relative to each other in the width direction of the beam line during heat treatment of the substrate ;
An adjustment mechanism configured to move the stage toward the laser source and configured to adjust the pitch and roll of the stage ;
A first optical detector that receives a portion of radiation emitted from the laser source and propagating along the path;
A second optical detector for receiving radiation emitted from the laser source and reflected from the substrate;
A computer system that receives the signals from the first and second optical detectors and controls the adjustment mechanism to control the convergence of beam lines on the substrate;
The heat processing apparatus provided with. The computer system includes a first discharge power measured by the optical detector, for controlling said adjusting mechanism in response to said second reflective power measured by the optical detector, according to claim 7 Heat treatment equipment. The heat treatment apparatus according to claim 7, comprising at least three photosensors embedded in the stage and coupled to the computer system for adjusting the pitch and roll of the stage.

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