KR20050008688A - Thermal flux processing by scanning electromagnetic radiation - Google Patents

Abstract

The thermal processing apparatus includes a stage 216, a continuous wave (cw) electromagnetic radiation source 202, a series of lenses 210, a moving mechanism 218, and a controller 226. Stage 216 is configured to receive substrate 214. The cw electromagnetic radiation source 202 is disposed adjacent to the stage 216 and is configured to emit cw electromagnetic radiation along a path towards the substrate 214. The series of lenses 210 is disposed between the cw electromagnetic radiation source 202 and the stage 216 and is configured to focus the cw electromagnetic radiation onto one cw electromagnetic radiation 222 on the surface of the substrate 214. .

Description

Thermal flux processing by scanning of electromagnetic radiation {THERMAL FLUX PROCESSING BY SCANNING ELECTROMAGNETIC RADIATION}

The integrated circuit (IC) market continues to demand greater memory capacity, faster switch speeds, and smaller minimum wiring widths. One of the main steps taken to address this requirement in the art is to change from batch processing of multiple substrates, such as silicon wafers in a large furnace, to single substrate processing in a small reaction chamber.

Typically, this batch processing fabrication is performed with four basic operations: layering, patterning, doping, and heat treatment. Many of these tasks require heating the substrate to a high temperature so that various chemical and physical reactions can occur. Of particular interest are heat treatment and layering, which will be described later respectively.

Heat treatment is the operation in which the substrate is simply heated and cooled to achieve a particular result. No additional material is added to or removed from the substrate during the heat treatment. Heat treatments, such as rapid thermal processing or annealing, generally provide a significant amount of thermal energy (high temperature) to the substrate in a short time, and then require rapid cooling of the substrate to terminate the thermal process. The amount of thermal energy delivered to the substrate during this processing is known as the thermal budget. The thermal burden of the material is a function of temperature and process duration. Low thermal burden is desirable for very small IC fabrication, which can be provided at high temperatures when the process time is very short.

Examples of heat treatments currently in use include rapid thermal processing (RTP) and impulse (spike) annealing. While these processes are used extensively, current technologies are not ideal. These techniques not only expose the substrate to elevated temperatures for long periods of time but also tend to ramp up and ramp down the temperature of the substrate too slowly. These problems are compounded by increasing substrate size, increasing switch speed, and / or decreasing minimum wiring width.

In general, this heat treatment raises the temperature of the substrate under controlled conditions in accordance with certain thermal recipes. These thermal recipes basically comprise the temperature at which the substrate must be processed; Rate of change of temperature, ie the ramp-up and ramp-down ratios of temperature; And the time that the thermal processing system is maintained at a particular temperature. For example, thermal recipes require that the substrate be heated to a different temperature of 1200 ° C. or more from room temperature for 60 seconds or longer processing time at each different temperature.

Moreover, in order to meet certain purposes, such as microdiffusion of dopants in the substrate, the time at which each substrate becomes hot must be limited. To do this, the ramp up and down ratio of temperature is preferably high. In other words, it is desirable to be able to adjust the temperature of the substrate from a low temperature to a high temperature and within the shortest possible time to minimize thermal burden.

This requirement for high temperature ramp rates improves rapid thermal processing (RTP) so that typical temperature ramp up rates range from 200-400 ° C./sec when compared to 5-15 ° C./min in conventional furnaces. Typical ramp-down ratios range from 80-150 ° C./sec.

1 is a graph 100 of thermal profiles of different conventional thermal processes. As shown, the thermal profile 102 of a typical RTP system has a ramp-up rate of 250 ° C./sec and a ramp-down rate of 90 ° C./sec.

The disadvantage of RTP is that RTP heats the entire substrate even though the IC device is only present within the top few microns of the substrate. This limits how quickly the substrate can be heated and cooled. Moreover, when the temperature of the entire substrate is raised, heat can be dispersed into the surrounding space or structure. As a result, today's RTP systems strive to achieve a 400 ° C./sec ramp-up ratio and a 150 ° C./sec ramp-down ratio.

1 also shows a thermal profile 104 of the laser annealing process. Laser annealing is used during the manufacture of thin film transistor (TFT) panels. Such a system uses a laser spot to melt and recrystallize polysilicon. The entire TFT panel is exposed by scanning a laser spot across a continuous exposure field on the panel. In the substrate field, laser pulses are used to illuminate the exposure field for a period of about 20-40 ns, where the exposure field is obtained by rastering down across the substrate. As can be seen from the thermal profile 104 for laser annealing, the ramp rate is nearly instantaneous at billions per second. However, the laser pulses or flashes used for laser annealing are so fast that they do not give the non-melting process enough time for sufficient annealing to occur. In addition, devices or structures following the exposed area may be exposed to extreme temperatures that melt them, or very low temperatures that provide little annealing effect. Moreover, homogenization of the thermal exposure of each part of the substrate is difficult to achieve because different areas absorb at different rates and cause a significant temperature gradient. The process is so fast that thermal diffusion does not equilibrate the temperature, causing severe pattern dependence. As a result, this technique is inadequate for single crystal silicon annealing because different regions on the substrate surface are heated to very different temperatures causing large nonuniformity at short distances.

Another thermal processing system, currently under development by Vortek Industries Ltd. of Canada, uses flash-enabled spike annealing in an attempt to rapidly cool areas that provide high thermal energy to the substrate and limit thermal exposure in a short time. The use of this thermal processing system provides a junction depth of spike annealing at 1060 ° C. but should improve activation to 1100 ° C. with flash. In general, the RTP system generally ramps up to the desired temperature around 1060 ° C. and then begins ramping down shortly after reaching the desired flash temperature. This is done to minimize the amount of diffusion that occurs while achieving proper activation from elevated temperatures. The thermal profile 106 of this flash using spike annealing is also shown in FIG. 1.

In view of the foregoing, there is a need for an apparatus and method for annealing substrates with high ramp-up and ramp-down ratios. This will better control the fabrication of smaller devices resulting in improved performance. Moreover, such an apparatus and method should ensure that all points of the substrate have substantially homogeneous thermal exposure to reduce pattern dependence and potential defects.

Attention is now directed to layering, another basic manufacturing operation that generally requires the addition of energy or heat. Layering uses a variety of techniques to add thin layers or films to the surface of the substrate, the most widely used of which are growth and deposition. The added layers function as semiconductors, dielectrics (insulators), or conductors in IC devices. These layers must meet various requirements such as uniform thickness, flat surface, uniform composition and particle size, film without stress, purity, and integrity. Common deposition techniques that require the addition of energy include, for example, chemical vapor deposition (CVD); Variations of CVD known as rapid thermal chemical vapor deposition (RTCVD); Variations of CVD known as low pressure CVD (LPCVD); And atomic layer deposition (ALD).

CVD is the most widely used technique for physically depositing one or more layers or films such as silicon nitride (Si ₃ N ₄ ) on a substrate surface. During the CVD process, various gases such as ammonia (NH ₃ ) and dichlorosilane (DCS) containing the atoms or molecules required for the final film are injected into the reaction chamber. Chemical reactions between gases are induced by high energy, such as heat, light, or plasma. The reacted atoms or molecules are deposited and accumulated on the substrate surface to form a thin film having a predetermined thickness. The reaction byproduct is substantially flushed from the reaction chamber. The deposition rate is determined by the reaction conditions of the supplied energy; The amount and proportion of gas present in the reaction chamber; And / or by controlling the pressure in the reaction chamber.

Reaction energy is generally supplied by heat (conduction or convection), induced RF, radiation, plasma, or ultraviolet energy sources. The temperature is generally in the range of room temperature to 1250 ° C, more generally in the range of 250 ° C to 850 ° C.

While it is desirable to heat the substrate to high temperatures in current heat driven processes, it is also desirable that the substrate is not exposed to such high temperatures for a long time. That is, it is desirable to control the temperature of the substrate from low temperature to high temperature and within the shortest time possible, ie with low thermal burden.

However, current heat driven processes heat the entire substrate even though only the surface of the substrate needs to be heated. Since the substrate has thermal inertia resistant to temperature changes, heating the entire substrate limits how quickly the substrate can be heated and cooled. For example, if the temperature of the entire substrate is raised, cooling of the substrate can only occur by heat dissipation into the surrounding space or structure.

In CVD and LPCVD, various gases are fed or injected simultaneously into the reaction chamber. However, gas phase reactions that occur between reactant gases may occur at certain locations in the reaction chamber that include the peripheral space around the substrate. Reactions taking place in the surrounding space are undesirable because they can form particles that can be embedded in the film. Gas phase reactions make deposition dependent on flow, and significant nonuniformity can occur due to flow dependence.

More recently, ALDs have been developed that solve the gas phase reaction problems described above with respect to CVD and LPCVD. In ALD, a first gas is injected into the reaction chamber. Atoms or molecules of the first gas attach to the surface of the substrate. A cleaning gas is then injected to flush the first gas from the reaction chamber. Finally, a second gas is injected into the reaction chamber to react with the first gas on the surface of the substrate. When the first and second gases are not simultaneously present in the reaction chamber, no gas phase reaction occurs in the surrounding space. This eliminates the problems associated with particle formation and flow dependence in the surrounding space. However, the deposition rate in ALD is slow, about 1 ms / sec. In addition, ALD is limited by the same temperature limitations and thermal burdens as in CVD.

In view of the foregoing, a need exists for an apparatus and method for depositing a layer on a substrate that reduces gas phase reaction problems. More specifically, such an apparatus and method should heat only the surface of the substrate and provide a high ramp-up and ramp-down ratio, ie low thermal burden. Such devices and methods preferably meet general and special parameters such as uniform layer thickness, flat layer surface, uniform layer composition and particle size, low stress film, purity, and integrity.

The present invention relates generally to semiconductor device fabrication. More specifically, the present invention relates to an apparatus and method for thermally processing a substrate by scanning the substrate with radiation.

DETAILED DESCRIPTION In order to better understand the characteristics and objects of the present invention, reference is made to the following detailed description in conjunction with the accompanying drawings.

1 is a thermal profile graph of a different thermal process of the prior art,

2A is a schematic side view of an apparatus for thermally processing a substrate in accordance with an embodiment of the invention,

FIG. 2B is a schematic plan view of the substrate and stage shown in FIG. 2A;

3 is a schematic side view of another apparatus for thermally processing a substrate in accordance with another embodiment of the present invention;

4 is a flow chart of a method of thermally processing a substrate,

5 is a graph of temperature at a fixed point on and through a substrate during thermal processing in accordance with an embodiment of the invention,

6 is a schematic side view of an apparatus for depositing a layer on a substrate in accordance with another embodiment of the present invention;

7 is a flow chart of a method of depositing a layer on a substrate in accordance with an embodiment of the present invention shown in FIG.

FIG. 8 is a graph of Monte Carlo simulation results for silane decomposition at 850 ° C. and 740 torr according to an embodiment of the invention shown in FIG. 6,

9A is a side view of another apparatus for thermally processing a substrate in accordance with an embodiment of the invention,

FIG. 9B is an oblique view of the device shown in FIG. 9A, FIG.

9C is a rear view of another apparatus for thermally processing a substrate in accordance with another embodiment of the present invention,

FIG. 10 is a schematic side view of the intercleave combiner shown in FIGS. 9A and 9B;

FIG. 11 is a more detailed cross sectional view of the focusing light and detection module shown in FIGS. 9A and 9B;

12 is an isometric view of a prototype of the device shown in FIGS. 9A and 9B,

13 is a flowchart of a method of controlling a thermal process,

14A is a partial cross sectional view of an automated focusing mechanism,

14B is a top view of the tooling substrate and stage shown in FIG. 14A taken along lines 14B-14B,

14C is a flow chart of a method for automatically concentrating continuous wave electromagnetic radiation on a top surface of a substrate,

14D is a graph of measured energy density versus vertical distance from the best focus at the aperture.

Similar reference numerals are used for corresponding members throughout the various views. For ease of reference, the first digit of a predetermined reference number refers to the figure in which the reference number is shown. For example, 102 may be found in FIG. 1, and 1341 may be found in FIG. 13.

In accordance with an embodiment of the present invention there is provided an apparatus for depositing a layer on a substrate. The apparatus includes a reaction chamber and a gas injector configured to inject one or more gases into the reaction chamber. The apparatus also includes a continuous wave electromagnetic radiation source, a stage in the reaction chamber, and focusing optics disposed between the continuous wave electromagnetic radiation source and the stage. The stage is configured to receive a substrate thereon. The focusing light is configured to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into one continuous wave electromagnetic radiation on the upper surface of the substrate. Continuous wave electromagnetic radiation preferably extends across the width or diameter of the substrate. The apparatus also includes a movement mechanism configured to move the stage and the continuous wave electromagnetic radiation with respect to each other.

According to the present invention there is provided a method of depositing one or more layers on a substrate. The substrate is initially located in the reaction chamber. One or more gases enter the reaction chamber. The predetermined rate of radiation movement is determined. This predetermined speed is based on numerous factors such as thermal recipes for processing the substrate, characteristics of the substrate, continuous wave electromagnetic radiation power, width of radiation, power density in radiation, and the like.

Continuous wave electromagnetic radiation is emitted from the continuous wave radiation source and is preferably collimated. Continuous wave electromagnetic radiation is subsequently concentrated into radiation extending across the surface of the substrate. The radiation is moved relative to the surface at a certain constant rate.

The combination of heat generated by the introduced gas and radiation causes one or more gases to react and to deposit a layer on the surface of the substrate. Undesired reaction byproducts are flushed from the reaction chamber. This process is repeated until a layer having a predetermined thickness is formed on the substrate surface.

According to another embodiment of the present invention, a thermal flux processing apparatus is provided. The thermal flux processing apparatus includes a continuous wave electromagnetic radiation source, a stage, focusing light, and a moving mechanism. The continuous wave electromagnetic radiation source is preferably one or more laser diodes. The stage is configured to receive a substrate thereon. The focusing light is preferably disposed between the continuous wave electromagnetic radiation source and the stage and configured to concentrate the continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into one continuous wave electromagnetic radiation on the upper surface of the substrate. The length of the continuous wave electromagnetic radiation preferably extends across the entire width of the substrate. The movement mechanism is configured to move the stage and the continuous wave electromagnetic radiation with respect to each other, and preferably includes a chuck that holds the substrate firmly.

Also provided is a method of thermally processing a substrate. Continuous wave radiation is concentrated in one radiation on the upper surface of the substrate. The radiation is moved relative to the surface at a certain constant rate. This allows all points of the substrate to have a substantially uniform thermal exposure or history. Process control is achieved by adjusting the scan rate rather than the lamp power, simplifying the control of the device. This allows for very local heating without generating a defect.

Therefore, the present invention heats only a small portion of the substrate surface at any given moment. This reduces the total radiated power requirements. In fact, when only one cord of the substrate is heated at a given time, an energy density of 150 kW / cm 2 can be achieved on a 300 mm wafer with only a 5 kW radiation source.

By heating a small area at a given moment, it is possible to achieve a ratio of millions of lamps per second on a substrate with only a few kW of radiant power. In addition, this high ramp rate allows the top surface to be heated above 1200 ° C. from the ambient temperature and cooled to near ambient temperature before the bulk substrate temperature is raised.

The apparatus and method described above can heat the substrate surface to a predetermined significant temperature for up to milliseconds. In addition, since the radiation only heats the surface of the substrate, the reaction of the gases takes place only at the surface. If the reaction at room temperature is negligible, this allows multiple gases to be injected simultaneously without causing undesirable gas phase reactions from the substrate surface. The method can be performed at atmospheric pressure, resulting in faster decomposition of the reactants, allowing for higher deposition rates.

In accordance with another embodiment of the present invention, a thermal processing apparatus is provided that includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a moving mechanism, a detection module, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage and configured to emit continuous wave electromagnetic radiation along a path towards the substrate. A series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage. The series of lenses is configured to concentrate the continuous wave electromagnetic radiation into one continuous wave electromagnetic radiation on the surface of the substrate. This concentration causes the radiation to converge or focus on one continuous wave electromagnetic radiation. The movement mechanism is configured to move the stage and the continuous wave electromagnetic radiation with respect to each other. The detection module is located in the path and is configured to detect continuous wave electromagnetic radiation. In a preferred embodiment, the detection module is located between a series of lenses, more preferably between the magnifying lens and the remaining lenses configured to focus continuous wave electromagnetic radiation. The computer system is coupled to the detection module. Also in a preferred embodiment, the continuous wave electromagnetic radiation has a width of less than 500 microns and a power density of at least 30 kW / cm 2.

The detection module preferably includes one or more emitted power detectors configured to detect continuous wave electromagnetic radiation emitted from the continuous wave electromagnetic radiation source. The detection module also preferably includes one or more reflected power detectors configured to detect continuous wave electromagnetic radiation reflected from the surface. One or more beam splitters are provided for sampling a portion of the emitted continuous wave electromagnetic radiation or for sampling a portion of the reflected continuous wave electromagnetic radiation. The beam splitter is preferably located between the continuous wave electromagnetic radiation module and the stage, more preferably between the series of lenses, more preferably between the magnifying lens and the remaining lenses configured to focus the continuous wave electromagnetic radiation. In one embodiment, the emitted power detector and the reflected power detector detects 810 nm continuous wave electromagnetic radiation. One or more temperature detectors are configured to detect surface temperature in continuous wave electromagnetic radiation by detecting continuous wave electromagnetic radiation at a wavelength different from 810 nm. The filter is preferably arranged between the temperature detector and the continuous wave electromagnetic radiation. The filter is configured such that only continuous wave electromagnetic radiation having a wavelength different from 810 nm reaches the temperature detector. The filter is configured such that the optical pyrometer operates between 900 nm and 2000 nm, preferably at 1500 nm.

The computer system preferably includes determining emitted power emitted by the emitted power detector; Determining reflected power reflected by the reflected power detector; And controlling the power supplied to the continuous wave electromagnetic radiation source based on the detected emission and / or reflected power. The computer system may also include a reflectivity process to determine reflectivity. Reflectivity is proportional to reflected power / emitted power. The computer system may also include a temperature process that determines the temperature of the surface in continuous wave radiation. The temperature is proportional to the absorbed power equal to the emitted power minus the reflected power.

The series of lenses preferably comprises one or more magnifying lenses disposed between the continuous wave electromagnetic radiation source and the stage. The one or more magnifying lenses are configured to magnify the continuous wave electromagnetic radiation beam emitted from the continuous wave electromagnetic radiation source into an enlarged beam of continuous wave electromagnetic radiation. The series of lenses may further comprise multiple cylindrical lenses arranged in a row between the continuous wave electromagnetic radiation source and the stage. The multi-cylindrical lens is configured to focus the magnified lens of continuous wave electromagnetic radiation into continuous wave electromagnetic radiation on the substrate surface.

The continuous wave electromagnetic radiation source comprises multiple sets of opposing laser diode modules, wherein each multiple set of opposing laser diode modules is preferably controlled separately. In addition, a separate detection module is preferably provided for each set of laser diodes.

An interleave combiner is preferably arranged between the continuous wave electromagnetic radiation source and the series of lenses. Interleaved combiners preferably use dielectric stacks for enhanced reflection at continuous wave electromagnetic radiation wavelengths. The heat emission signal from the substrate is preferably measured through a series of lenses as well as interleaved combiners at wavelengths longer than the wavelength of continuous wave electromagnetic radiation. Interleaved combiners use fill ratio enhancing optics to reduce the size of a series of lenses.

An adjustment mechanism may be provided to move the continuous wave electromagnetic radiation source and stage relative to each other. This allows the computer system to control the adjustment mechanism based on the measurements by the detection module to keep the continuous wave radiation focused on the surface. In an alternative embodiment, a reflective surface is provided for redirecting the scattered continuous wave radiation into one continuous wave radiation.

According to another embodiment of the present invention, a thermal processing method is provided. The surface of the substrate is heated to a predetermined power density for a predetermined time. This causes the surface of the substrate to be heated from ambient temperature (T _A ) to process temperature (T _P ), and the temperature (T _D ) at a predetermined depth from the surface is the sum of the ambient temperature and (process temperature-ambient temperature) / 2 Is kept below. That is, T _D ≤ T _A + (T _P -T _A ) / 2. In a preferred embodiment, the predetermined power density is at least 30 kW / cm 2, the predetermined time is between 100 microseconds and 100 milliseconds, the ambient temperature is about 500 ° C. or less, the process temperature is about 700 ° C. or more, and the predetermined depth is 10 times the depth of interest, where the depth of interest is the maximum depth of the device structure in silicon.

The thermal processing method may also include initially coating the surface with a thermal reinforcement layer. In addition, certain scattered continuous wave electromagnetic radiation may be reflected toward the radiation. The emitted power of the continuous wave electromagnetic radiation and the reflected power of the continuous wave electromagnetic radiation reflected from the surface may be measured. The reflected power may be compared to the emitted power. The power supplied to the continuous wave electromagnetic radiation source may be controlled based on this comparison. In addition, heat release from the substrate may be measured separately at the focus of the continuous wave electromagnetic radiation at a wavelength substantially different from the reflected continuous wave electromagnetic radiation. The temperature at the surface may be determined in the radiation. In addition, absorptivity, reflectivity, and emission rate may be determined.

Prior to focusing, an optimal orientation of the substrate relative to the scan direction may be selected. The optimal orientation is determined by identifying the scan direction with the least overlap with the theoretical slip plane of the substrate. The substrate may also be preheated. The preheating consists of one or more prescans with a continuous wave electromagnetic radiation source and is preferably carried out using a hot plate.

In addition, according to the invention a series of lenses comprises one or more magnifying lenses and multiple cylindrical lenses. The magnifying lens is disposed between the continuous wave electromagnetic radiation source and the stage. The magnifying lens is configured to magnify the continuous wave electromagnetic radiation beam into an enlarged beam of continuous wave electromagnetic radiation. Multi-cylindrical lenses are preferably arranged in line between the one or more magnifying lenses and the stage. The multi-cylindrical lens is configured to focus an enlarged beam of continuous wave electromagnetic radiation into one continuous wave electromagnetic radiation on the surface of the substrate. The at least one magnifying lens preferably comprises two magnifying lenses, and the multi-cylindrical lens has a spherical or aspherical shape. Some of the multi-cylindrical lenses may have a spherical shape and others may have a non-spherical shape. A gas injector may be provided near the multiple lenses to circulate the cooling cleaning gas between the multiple lenses.

In addition, an automatic focusing mechanism for the thermal processing apparatus is provided. The automatic focusing mechanism includes a continuous wave electromagnetic radiation module, a stage, one or more photo detectors, a moving mechanism, an adjustment mechanism, and a controller. The continuous wave electromagnetic radiation module is configured to concentrate the continuous wave electromagnetic radiation into one continuous wave electromagnetic radiation on the surface of the substrate. The stage is configured to receive a substrate thereon. One or more photo detectors are coupled to the stage. One or more photo detectors are configured to measure the intensity of the continuous wave electromagnetic radiation. The movement mechanism is configured to move the stage and the continuous wave electromagnetic radiation module with respect to each other. The adjustment mechanism is coupled to the stage and is configured to adjust the height, roll and pitch of the stage. Finally, the controller is coupled to a continuous wave electromagnetic radiation module, one or more photo detectors, a moving mechanism, and a regulating mechanism. One or more photo detectors preferably comprise three photo detectors embedded in the stage. Three photo detectors and controllers are configured to measure the pitch, roll and height of the stage for the continuous wave electromagnetic radiation module.

In use, one continuous wave electromagnetic radiation is automatically concentrated on the surface of the substrate. After the automatic focusing mechanism is provided, a tooling substrate having one or more apertures therethrough is placed on the stage. One or more apertures are aligned with one or more photo detectors. One or more apertures are then radiated from the continuous wave electromagnetic radiation source to have continuous wave electromagnetic radiation. The intensity of the continuous wave electromagnetic radiation is then measured in one or more photo detectors and the positions of the stage and the continuous wave electromagnetic radiation source are adjusted relative to each other based on the intensity.

The stage and continuous wave electromagnetic radiation source are then laterally moved relative to each other to align another aperture in the tooling substrate with another photo detector. Another aperture is exposed to continuous wave electromagnetic radiation from a continuous wave electromagnetic radiation source. Another intensity of the continuous wave electromagnetic radiation is detected in another photo detector. Finally, the positions of the stage and continuous wave electromagnetic radiation source are set relative to each other based on another intensity. These steps are repeated until the stage is in a predetermined position with respect to the continuous wave electromagnetic radiation source.

Yet another embodiment provides a method of thermally processing a semiconductor substrate. Continuous wave electromagnetic radiation is concentrated into one continuous wave electromagnetic radiation that extends partially across the surface of the semiconductor substrate. The continuous wave electromagnetic radiation and the surface are then moved relative to each other at a predetermined constant speed. The radiation is subsequently moved along its length by a distance equal to or slightly smaller than that length. The continuous wave electromagnetic radiation and the surface are moved again with respect to each other at a predetermined constant speed. This overscanning causes all exposed points of the substrate to have substantially homogeneous thermal exposure.

2A is a schematic side view of an apparatus 200 for thermally processing a substrate in accordance with one embodiment of the present invention. Thermally processing a substrate is any thermal process that requires the features of the present invention described below. Embodiments of such thermal processes include thermal annealing or thermal processes of substrates used in chemical vapor deposition (CVD), all of which will be described in the remaining figures.

Apparatus 200 includes a continuous wave electromagnetic radiation module 201, a stage 216 configured to receive a substrate 214 thereon, and a movement mechanism 218. The continuous wave electromagnetic radiation module 201 includes a continuous wave electromagnetic radiation source 202 and a focusing light 220 disposed between the continuous wave electromagnetic radiation source 202 and the stage 216.

In a preferred embodiment, the substrate 214 is a glass or quartz substrate having a silicon layer, used to fabricate thin film transistors (TFTs) or the like; Silicon germanium or alloys thereof; Silicon on insulator (SOI); Any suitable substrate, such as a single crystal silicon substrate. However, since single crystal silicon substrates have much higher thermal conductivity than TFTs and the field of single crystal silicon substrates requires tighter control of the thermal process, thermal flux processing of single crystal silicon substrates will be more difficult than thermal flux processing of TFT substrates. .

The continuous wave electromagnetic radiation source 202 may emit electromagnetic radiation, such as light, or "continuous waves." By "continuous wave" is meant that the radiation source is configured to emit radiation continuously, rather than explosive, pulsed, or flashing radiation. This is quite different from the laser typically used for laser annealing with explosive or flash light.

Moreover, since continuous wave electromagnetic radiation needs to be absorbed at or near the surface of the substrate, the radiation has a wavelength within the range in which the substrate absorbs radiation. For silicon substrates, the continuous wave electromagnetic radiation preferably has a wavelength in the range from 190 nm to 950 nm. More preferably, the continuous wave electromagnetic radiation has a wavelength of about 808 nm.

Alternatively, a high power continuous wave electromagnetic radiation laser source operating at or near UV may be used, wherein the wavelength generated by this continuous wave electromagnetic radiation laser source is strongly absorbed by the reflective material.

In a preferred embodiment, the continuous wave electromagnetic radiation source 202 may continuously emit radiation for at least 15 seconds. Further, in a preferred embodiment, the continuous wave electromagnetic radiation source 202 comprises multiple laser diodes, each of which generates uniform and spaced interfering light at the same wavelength. In another preferred embodiment, the power of the laser diode is in the range of 0.5 kW to 50 kW, preferably about 5 kW. Suitable laser diodes include Coherent Inc. of Santa Clara, California; Spectra-Physics, California; Or St. Manufactured by Cutting Edge Optronics of Charles Missouri. Another suitable laser diode is Spectra Physics' MONSOON® Multi Bar Module (MBM), which provides 40-80 watts of continuous wave power per laser diode module, but the preferred laser diode is manufactured by Cutting Edge Optronics.

The focusing light 220 preferably includes one or more collimators 206 that collate the radiation 204 from the continuous wave electromagnetic radiation source 202 into a substantially parallel beam 208. This collimated radiation 208 is then concentrated by one or more lenses 210 to one radiation 222 at the top surface 224 of the substrate 214.

Lens 210 is any suitable lens, or series of lenses, that can focus radiation into one radiation. In a preferred embodiment, the lens 210 is a cylindrical lens. Alternatively, lens 210 may be one or more concave lenses, convex lenses, flat mirrors, concave mirrors, convex mirrors, refractive lenses, diffractive lenses, Fresnel lenses, gradient index lenses, and the like. The focusing light 220 is described in more detail below with respect to FIG. 11.

Stage 216 is any platform or chuck that can hold substrate 214 firmly during movement, as described below. In a preferred embodiment, the stage 216 includes means for gripping the substrate, such as a frictional, gravity, mechanical, or electrical system. Examples of suitable gripping means include mechanical clamps, electrostatic chucks or vacuum chucks and the like.

The apparatus 200 also includes a movement mechanism 218 configured to move the stage 216 and the radiation 222 relative to each other. In one embodiment, the moving mechanism 218 is coupled to the stage 216 to move the stage 216 relative to the continuous wave electromagnetic radiation source 202 and / or focusing light 220. In yet another embodiment, the moving mechanism 218 may be configured to move the continuous wave electromagnetic radiation source 202 and / or focusing light 220 relative to the stage 216 to the continuous wave electromagnetic radiation source 202 and / or focusing light ( 220). In another embodiment, the movement mechanism 218 moves both the continuous wave electromagnetic radiation source 202 and / or focusing light 220, and the stage 216. Any suitable movement mechanism may be used, such as conveyor systems, rack and pinion systems, and the like.

The movement mechanism 218 is preferably coupled to the controller to control the scan speed at which the stage 216 and the radiation 222 move relative to each other. In addition, the movement of the stage 216 and the radiation 222 relative to each other preferably follows a path perpendicular to the radiation 222 and parallel to the upper surface 224 of the substrate 214. In a preferred embodiment, the movement mechanism 218 moves at a constant speed. Preferably, this constant speed is about 2 cm / sec for a 35 micron wide line. In another embodiment, the movement of the stage 216 and the radiation 222 relative to each other does not follow a path perpendicular to the radiation 222.

FIG. 2B is a schematic plan view of the substrate and stage taken along line 2B-2B in FIG. 2A. In a preferred embodiment, the substrate 214 is a circular substrate having a diameter of 200 or 300 mm and a thickness of about 750 microns. Also in a preferred embodiment, the radiation 222 has a length that extends at least across the entire diameter or width of the substrate 214. The radiation 222 also preferably has a width 228 in the range of 3 to 500 microns. However, in a preferred embodiment, the radiation 222 has a width 228 of about 35 microns. The width is measured at half the maximum intensity of radiation (FWHM). In all embodiments, the length of the radiation is longer than its width. In a preferred embodiment, the radiation 222 linearly crosses the substrate 214 so that the radiation is perpendicular to the direction of travel, ie the radiation is always parallel to the fixed line or cord 252 of the substrate.

Preferred power densities in radiation range from 10 kW / cm 2 to 200 kW / cm 2 with a nominal range around 60 kW / cm 2. Radiating the entire surface of the substrate at this power density cannot be easily accomplished, but can scan radiation with this intensity across the substrate. For example, experiments using 400 micron wide radiation with a peak power density of 70 kW / cm 2 scan at 100 cm / sec with ramp-up and ramp-down ratios exceeding 4 million ° C./sec and the surface of the substrate Is heated to about 1170 ° C.

3 is a schematic side view of another apparatus 300 for thermally processing a substrate in accordance with another embodiment of the present invention. The embodiment shows another arrangement of focusing light 320. In this embodiment, the focusing light 320 includes a lens 210 and one or more radiation guides, such as one or more optical fibers 308 and prisms 306. Other radiation guides such as waveguides, mirrors, or diffusers may also be used.

Radiation from the continuous wave electromagnetic radiation source 202 is directed to a prism 306 that redirects radiation to one or more optical fibers 308. The radiation is sent through the optical fiber 308 to the lens 210, where the radiation is concentrated in one radiation 222.

It will be appreciated that many different combinations of the focusing light 220 (FIG. 2A or 320) described above may be used to send radiation from a continuous wave electromagnetic radiation source and concentrate it into one radiation. Also, laser diodes in a straight array can be used as the radiation source. In addition, any suitable means of generating a uniform radiation distribution, such as a radiation diffuser, may be used.

4 is a flowchart 400 of a method of thermally processing a substrate 214 (FIG. 2A). The apparatus described in connection with FIGS. 2 and 3 is provided at step 402. The controller 226 (FIG. 2A) then determines the scan rate at which the radiation 222 (FIG. 2A) and the substrate will move relative to each other in step 404. The crystal may comprise a thermal recipe for processing a substrate; Substrate properties; Power of the continuous wave electromagnetic radiation source 202 (FIG. 2A); Width of radiation; Based on power density in radiation and the like.

The continuous wave electromagnetic radiation source 202 (FIG. 2A) emits a continuous radiation wave 204 (FIG. 2A) at step 406. The radiation 204 is preferably collimated with a radiation beam 208 (FIG. 2A) collimated in step 408. The collimated radiation beam 208 (FIG. 2A) is concentrated in one radiation 222 (FIG. 2A). According to the predetermined scan rate, the stage 216 (FIG. 2A) and the radiation 222 (FIG. 2A) are moved relative to each other by the moving mechanism 218 (FIG. 2A) in step 412. This movement occurs along a path perpendicular to the radiation 222 and parallel to the top surface of the substrate, such that radiation crosses the entire substrate 214. In a preferred embodiment, the moving mechanism 218 scans the radiation source and focusing light over the top surface of the substrate at about 2 cm / sec.

FIG. 5 is a graph 500 of temperature versus time and depth at a fixed point on and through a substrate during thermal processing performed according to the method described above with respect to FIG. 4. Temperature axis 502 represents a temperature in the range of 0-1400 ° C. at a fixed point. Axis 504 represents the depth from top surface 224 (FIG. 2B) into substrate 214 (FIG. 2B) at a fixed point. Axis 506 represents the time in seconds at a point after the start of the scan. It is assumed that the fixed point is located at 508.

When radiation 222 (FIG. 2B) scans across the top surface 224 (FIG. 2B) of the substrate 214 (FIG. 2B), the radiation exposes radiation or code on the substrate to the heat generated by the radiation. Before the radiation reaches a fixed point, the temperature at the fixed point is the ambient temperature through the cross section of the substrate at the fixed point and at the top surface, as indicated by reference numeral 516. As soon as the radiation reaches a fixed point at 508, the temperature at the top surface ramps up to a process temperature such as 1200 ° C. (or any temperature required for the process) at about 1 e6 C / s as shown at 510. At the same time, the substrate acts as a heat sink which causes a sharp drop in temperature from the surface as indicated by reference numeral 512. For example, the temperature is about 200 ° C. at 0.04 cm from the point on the top surface as shown in FIG. 5. Therefore, the heating effect is generally localized only on the upper surface. This is generally very advantageous because only the region near the top surface 224 (FIG. 2A) of the substrate requires thermal processing.

Because the radiation passes up and away from a fixed point, the temperature drops sharply, as shown at 514. This is because the substrate acts as a heat sink that diffuses heat from the top surface through the remainder of the lower temperature substrate. This is not possible in a conventional thermal system such as RTP, which heats the entire substrate simultaneously, since the entire substrate cannot dissipate heat to lower temperature regions at elevated temperatures. In fact, since the superimposed RTP graph results in a nearly flat surface at 1100 ° C. extending for about 1 second, it cannot be compared with RTP at the time scale shown in FIG. 5. One second is 400 times larger than the time shown in FIG.

Therefore, unlike the prior art process, the present invention heats the surface of the substrate at a predetermined power density for a predetermined time (about 1 millisecond) so that the surface of the substrate is preferably from an ambient temperature of 500 ° C. or less, preferably 700 ° C. or more. Heated to process temperature. At the same time, the temperature T _D at a predetermined depth from the surface is kept below the sum of the ambient temperature and (process temperature-ambient temperature) / 2. That is, T _D ≤ T _A + (T _P -T _A ) / 2. This predetermined depth is 10 times the depth of interest, ie 10 times the maximum width of the device structure of Si. In a typical Si substrate, the maximum width of the device structure is about 3 microns.

This heat transfer to the substrate bulk improves uniform heat exposure since heat has enough time to diffuse from the locally strong heat absorbing region to the low heat absorbing region. Also, the pattern density effect is comparable with RTP. However, the time scale is short enough to limit the diffusion depth of heat transfer to several microns as opposed to a few hundred micron thick substrate as in the case of RTP, significantly reducing the overall required power. The substrate bulk is not heated much, providing an ideal heat sink for temperature ramp down.

A concern of conventional laser annealing systems relates to stress related defects caused by rapid heating of very small areas of the substrate. Therefore, it was tested whether the thermal flux processing of the present invention caused certain stress related defects in the substrate. Peak stress occurs at the maximum temperature gradient, not at the maximum temperature. If the radiation is adequately narrow and the heating width is adequately shallow, it is possible to replace the highest thermal gradient region from the region of highest temperature, thereby increasing the slip window and reducing defects. During the experiment, samples were scanned at 20 cm / sec under 400 micron wide radiation with a peak power density of 60 kW / cm 2. The present invention can replace the peak thermal gradient from the peak temperature, allowing the formation of a suitable Ultra Shallow Junction (USJ) for 70 nm nodes with 1 keV boron implants without introducing any dislocations. Only general implant related defects were observed.

6 is a schematic side view of an apparatus 600 for depositing a layer on a substrate in accordance with another embodiment of the present invention. The device 600 is similar to the device 200 shown in FIGS. 2A and 2B and the device 300 shown in FIG. 3. Components having the same reference numerals are as shown in Figs. 2A and 2B. In addition, the apparatus 600 may be used to perform a deposition process, such as CVD, ALD, or the like.

In addition to the components described above in connection with FIGS. 2A and 2B, the apparatus 600 shows a reaction chamber 602 in which many components are accommodated. One or more injectors 604 are used to introduce or inject one or more gases 616 into the reaction chamber 602. Gas injector 604 preferably includes one or more gas sources 612 (1) -612 (N) fluidly coupled to one or more gas inlets 608 in the gas manifold 606 by a duct 610. do. The gas injector 604 may be located at an appropriate location in the reaction chamber 602. For example, gas may be injected at the side of the reaction chamber and flow across the surface of the substrate perpendicular to the direction of mutual movement between the radiation and the surface of the substrate, or may be injected from above the substrate as shown.

In the embodiment shown in FIG. 6, the continuous wave electromagnetic radiation is collimated by the collimator, redirected towards the substrate by the prism 306 and concentrated into the radiation by the lens 210. However, it should be appreciated that the focusing light 220 may include any suitable focusing light capable of focusing energy rays on the top surface 224 of the substrate 214 as described above. It should also be appreciated that focusing light may be located outside the chamber such that radiation may pass through the transparent window into the chamber. In addition, the chamber and / or gas source may have any suitable form and / or structure.

FIG. 7 is a flowchart 700 of a method of depositing one or more layers on a substrate in accordance with the embodiment of the present invention shown in FIG. 6. The substrate 214 (FIG. 6) is located in the reaction chamber 602 (FIG. 6) at step 702. One or more gases 616 (FIG. 6), such as ammonia (NH ₃ ) and dichlorosilane (DCS), containing the required atoms or molecules in layer 614 include substrate 214 (FIG. 6) in step 704. Flows into the reaction chamber 602 (FIG. 6).

The predetermined velocity for the movement of the radiation 222 (FIG. 6) is determined in step 706 as described below. The predetermined speed is based on many factors such as thermal processing for processing the substrate, characteristics of the substrate, power of continuous wave electromagnetic radiation, width of radiation, power density in radiation, and the like. In a preferred embodiment, the predetermined speed is about 2 cm / sec.

The continuous wave electromagnetic radiation is then emitted from the continuous wave electromagnetic radiation source 202 (FIG. 6) in step 708, as described above. The continuous wave electromagnetic radiation is preferably collimated by the collimator 206 (FIG. 6) in step 710.

Continuous wave electromagnetic radiation is subsequently concentrated at step 712 into one radiation 222 (FIG. 6) that extends across the top surface 224 (FIG. 6) of the substrate. In a preferred embodiment, the width 228 of FIG. 6 is about 35 microns. The radiation is then moved relative to the surface at the predetermined constant speed determined above in step 714. The movement is performed by the movement mechanism 218 (FIG. 6) under the control of the controller 226 (FIG. 6).

The combination of the introduced gas 616 (FIG. 6) and the heat generated by the radiation reacts with one or more gases 616 to deposit a layer 614 (FIG. 6) on the surface of the substrate. The reaction may be a chemical reaction between gases, decomposition of one or more gases, and the like. Undesired reaction byproducts are flushed from the reaction chamber in step 716.

The process is repeated until a layer 614 (FIG. 6) with a predetermined thickness is formed on the top surface 224 (FIG. 6) of the substrate 214 (FIG. 6). Since multiple scans are required to form the film / layer, the desired scan rate is preferably faster than the rate required for thermal flux annealing described above. Generally, each deposited layer is in the range of 8-10 Angstroms. The required film / layer varies from 20 angstroms for tunnel oxide used in flash memory to 1500 angstroms for spacer applications. Therefore, preferred scan speeds generally range from a few cm / sec to about 1 m / sec. Preferred radiation width 228 (FIG. 6) is the same as described above.

Chemical reactions include the temperature of a substrate surface by controlling continuous wave electromagnetic radiation or radiation; The amount and / or ratio of gas entering the reaction chamber; And by controlling the pressure in the reaction chamber.

The method described above can heat the substrate surface to significant temperatures for less than one millisecond. In addition, since the gas in the immediate vicinity of the surface is heated by radiation, the reaction of the gases takes place only at or near the surface. The heating is very simple because the radiation continues to move and only the gas which is just near the surface reacts. Since the gas off the surface does not become high temperature, undesirable gas phase reactions are prevented. This allows multiple gases to be injected simultaneously without leaving the substrate surface and causing undesirable gas phase reactions.

In a preferred embodiment, the process described above is carried out at pressures of several torr or more, with atmospheric pressure being preferred. 8 shows simulation results showing that sufficient decomposition of the reactants can occur at this pressure on a short time scale. In addition, in the preferred embodiment the temperature of radiation depends on the film / layer deposited, but is generally in the range of 600 to 900 ° C.

FIG. 8 is a graph 800 of Monte Carlo simulation results for silane decomposition at 850 ° C. and 740 torr in accordance with an embodiment of the invention shown in FIG. 6. This simulation at lower pressures mimics the deterministic model published in Meyerson, Scott and Tsui, Chemtronics 1 (1986) 150, referenced herein.

Graph 800 shows that silane, such as dichlorosilane (DCS), which is generally a CVD gas, decomposes into the molecules required for deposition on the substrate surface. Decomposition takes place at temperatures near 740 torr and 850 ° C., almost atmospheric pressure. The total time for decomposition to occur at this temperature and pressure is about 6 x 10 ^-4 seconds. Since the prior art methods cannot achieve this high temperature within such a short time and must provide sufficient time for the reaction to occur, the temperature and scan rate can only be provided by the present invention.

The apparatus and method described above for depositing a layer on a substrate has many advantages. For example, the thermal burden on the process is small because of the short time spent at elevated temperatures.

In addition, since the radiation applies heat only to the surface of the substrate, the reaction of the gases occurs only at the surface. This causes a reduction in gas phase movement limitation. This also causes a reduction in off-gassing gas phase reactions, which prevents undesirable particle formation on the substrate surface. In addition, the process can be carried out at atmospheric pressure, resulting in rapid decomposition of reactants such as silanes, thereby enabling high deposition rates.

9A is a side view of another apparatus 900 for thermally processing a substrate in accordance with another embodiment of the present invention. Device 900 is similar to device 200 shown in FIGS. 2A and 2B, device 300 shown in FIG. 3, and device 600 shown in FIG. 6. Similar parts are similar except for some differences described below.

Apparatus 900 includes a continuous wave electromagnetic radiation module 902, a stage 904 configured to receive a substrate 906 thereon, and a movement mechanism for moving the stage 904 and continuous wave electromagnetic radiation module 902 relative to each other. Not shown). The continuous wave electromagnetic radiation module 902 preferably includes light 910 disposed between one or more continuous wave electromagnetic radiation sources 908 (A + B) and the substrate 906 and continuous wave electromagnetic radiation sources 908 (A + B). A + B)). As mentioned above, the substrate 906 may be any substrate, such as a glass or quartz substrate having a silicon layer thereon used to fabricate a thin film transistor (TFT), silicon germanium or an alloy thereof, silicon on insulator (SOI), a single crystal silicon substrate, or the like. It is a suitable substrate.

The continuous wave electromagnetic radiation source 908 (A + B) is similar to the continuous wave electromagnetic radiation source 202 described in connection with FIG. 2A. In a preferred embodiment, the continuous wave electromagnetic radiation source 908 (A + B) is comprised of a substrate having a width of 30 microns and a length of at least 300 mm that is no greater than 9 kW of radiation concentrated by a light 910 (A + B) into one radiation. On the surface. Also in a preferred embodiment, the continuous wave electromagnetic radiation source 908 (A + B) comprises 15 laser diode modules 908 (A) on one side of the device 900 and 16 lasers on the other side of the device 900. Diode module 908 (B). The laser diode modules 908 (A) are arranged staggered with respect to the laser diode module 908 (B) as shown in FIG. 9B, that is, the radiation emitted from the laser diode module 908 (A) is laser diode module. Interlocked with radiation emitted from 908 (B). Also in a preferred embodiment, each set of opposing laser diode modules is electrically connected to one or more power sources 916. Alternatively, each single laser diode module, or combination of laser diode modules, may be operated on one or more power sources. The power source 916 is electrically connected to the computer system 914.

In a preferred embodiment, a cooling fluid such as water is circulated within the continuous wave electromagnetic radiation source to cool the continuous wave electromagnetic radiation source 908 (A + B) as is known in the art.

Light 910 (A + B) includes a focusing light 910 (A) and an interleaved combiner 910B similar to the focusing light described above. The interleaved combiner 910 (B) is described below with respect to FIG. 10, and the focusing light 910 (A) is described below with respect to FIG. 11.

Apparatus 900 also preferably includes detection module 912 (A + B + C) coupled to computer system 914 as described below in connection with FIG.

Computer system 914 includes instructions and / or procedures to perform the methods described below in connection with FIG. 13.

9C is a back view of another apparatus 950 for thermally processing substrate 962 in accordance with another embodiment of the present invention. In this embodiment, the continuous wave electromagnetic radiation does not extend across the entire width of the substrate 962, but rather only partially extends across the diameter or width of the substrate. That is, the continuous wave electromagnetic radiation has a length 960 smaller than the diameter or width 968 of the substrate.

In use, the continuous wave electromagnetic radiation preferably forms one or more scans across the substrate surface. Each successive scan preferably overlaps an already scanned area, improving thermal exposure uniformity along the length of the radiation. The radiation movement mechanism 966 is used to move the continuous wave electromagnetic radiation and the substrate along the length of the radiation relative to each other, ie substantially collinear with the length of the radiation and substantially perpendicular to the scan direction. This overlap averages the thermal exposures of all points on the substrate in a manner similar to the rotary averaging used in RTP.

The radiation movement mechanism 966 preferably moves the continuous wave electromagnetic radiation module (the radiation source 954 and the lens 956) to move the continuous wave electromagnetic radiation to the substrate. Alternatively, stage 964 may be moved relative to radiation, or the radiation and stage may be moved relative to each other.

In addition, this embodiment requires a smaller laser diode module 966 because the length 960 of continuous wave electromagnetic radiation only partially scans across the diameter or width of the substrate 962. For example, two laser diode modules may be interleaved between three opposing laser diode modules 966.

FIG. 10 is a schematic side view of the interleaved combiner 910 (B) shown in FIGS. 9A and 9B. The interleaved combiner 910 (B) is used to form part of the light 910 (A + B) and to improve the fill ratio of the emitted continuous wave electromagnetic radiation as described below. In a preferred embodiment, the interleaved combiner 910 (B) is an interleaving prism assembly.

In addition, the preferred embodiment of the apparatus 900 (FIGS. 9A and 9B) includes a microlens (not shown) that collates the rapid on-axis output of each laser diode module 908 (A) and 908 (B). . In this preferred embodiment, the pitch 1002 of each laser diode module is 2.2 mm, and the aperture 1004 of the fast emerging collimating micro lens is 0.9 mm. The fill ratio is the area exposed to continuous wave electromagnetic radiation divided into the entire area of the continuous wave electromagnetic radiation module. Thus, for example, if the lens system provides a beam footprint of 1 cm in length and 900 microns in width and the pitch of each laser diode module is 2.2 mm, the fill ratio is 900 microns / 2.2 mm or 41%, i.e. only continuous wave electromagnetic radiation. 41% of the emitting area of the module actually emits continuous wave electromagnetic radiation and 59% of the space or area on the laser module surface is dark. The dark areas are 1 cm long and 1.3 mm (2.2-0.9) wide. This results in an empty area where substantially no continuous wave electromagnetic radiation is present.

To improve the optical performance, the fill is increased by the interleaved combiner 910 (B), requiring a smaller subsequent series of lenses 910 (A + B), FIGS. 9A and 9B. In a preferred embodiment, the interleaved combiner 910 (B) doubles the fill ratio. For example, continuous wave electromagnetic radiation output from the fourth and fifth laser diode modules is interleaved between continuous wave electromagnetic radiation emitted from the second and third laser diode modules as shown in FIG. 10. Thus, the power output is the output of five laser diode bars compressed in the area of three laser diode bars. This facilitates subsequent beam expansion and focusing so that a moderately high power density can be achieved.

In a preferred embodiment the interleaved combiner 910 (B) uses a multilayer dielectric mirror on a suitable optical glass such as BK7 or fused silica for enhanced reflection at continuous wave electromagnetic radiation wavelengths.

11 is a more detailed cross sectional view of the focusing light 910 (A) and detection module 912 (A + B + C). The purpose of the focusing light 910 (A) is to concentrate the continuous wave electromagnetic radiation emitted from the continuous wave electromagnetic radiation source 908 (A + B), FIGS. 9A and 9B into one continuous wave radiation on the surface of the substrate 906. It is to let. In a preferred embodiment, the focusing light 910 (A) comprises a series of seven lenses labeled A-G. All lenses A-G are preferably cylindrical lenses having a spherical or Plano type. Cylindrical lenses with this spherical shape are selected because of their ease of manufacture and low cost compared to cylindrical lenses with aspherical shape. However, in alternative embodiments a less aspherical lens or a cylindrical lens with aspherical shape may be substituted for the seven cylindrical lenses with spherical or plano type shown. Moreover, in addition to focusing continuous wave electromagnetic radiation, the entire cylindrical lens significantly reduces certain optical aberrations.

Also in a preferred embodiment, the lens A is an magnifying lens having a substantially optically inlet side and a cylindrical outlet side. The magnifying lens is used to inflate the continuous wave electromagnetic radiation concentrated by the interleaved combiner 910 (B), FIGS. 9A and 9B for subsequent focusing by the remaining focusing lens B-G. For example, in a preferred embodiment, the continuous wave electromagnetic radiation beam is expanded to 20 mm wide and the rapid axis convergence is reduced to less than 0.1 degrees. Narrower radiation widths can be achieved due to reduced convergence. In addition, a wider beam can achieve an acceptable operating distance for an aperture of 0.4. When focused by the remaining lens B-G, the final beam is about 30 microns wide at the surface of the substrate 906.

The final lens G preferably has substantially opposite and optically flat inlet and outlet sides and serves only as a quartz window for isolating the wafer environment from the lens environment. It also moves the focus somewhat out of the radiation source.

In a preferred embodiment, the distance from the window to the substrate is about 8 mm. Also in a preferred embodiment, the lens A-G has the following prescribed data.

Inlet beam radius = 2.750000; Field angle = 0.250000; Principal wavelength = 810 nm, where radius and thickness are in millimeters.

surface Radius thickness Aperture radius material Source 0.000000 1.0000e + 20 4.3634e + 17 air A _entrance 0.000000 3.000000 4.000000 X BK7 A _exit 7.000000 28.000000 3.000000 X air B _entrance 0.000000 5.000000 12.500000 X BK7 B _exit -23.000000 0.000000 12.500000 X air C _entrance 74.100000 5.000000 12.500000 AX BK7 _Exit C 0.000000 0.000000 12.500000 X air D _entrance 41.000000 5.000000 12.500000 X BK7 D _exit 119.000000 0.000000 12.5000000 X air E _entrance 26.500000 5.000000 10.000000 X BK7 E _exit 44.500000 0.000000 10.000000 X air F _entrance 12.000000 5.000000 8.000000 X BK7 F _exit 22.800000 3.000000 8.000000 X air G _inlet 0.000000 4.000000 10.000000 X quartz G _exit 0.000000 0.000000 3.284151 SX air Board 0.000000 8.420000 0.114272 S

"Surface" refers to the surface of the lens, "inlet" refers to the entrance surface of the lens and "outlet" refers to the exit surface of the lens. Material refers to the material from which the lens is made. "X", "AX" and "SX" data refers to the shape of an aperture that is rectangular or elliptical, where "X" refers to specific aperture data, and "S" refers to the upper in the calculated column rather than specified "A" means aperture stop, basically a window through which a line must pass. For example, the entrance surface "AENTRY" of the lens A (Fig. 11) has a radius of 0 mm, i.e., a flat, 3 mm thick, 4 mm aperture aperture, a rectangular shape and is made of BK7 glass. The chart was formed using Sinclair Optic's OSLO line tracing software.

Lens A-G is preferably held in position within focusing light 910 (A) by frame 1102. In a preferred embodiment, the frame 1102 is made of machined stainless steel. The frame 1102 also preferably does not allow the robust system to align the lens in use, where a certain misalignment is desired to ensure that the focus line only moves (or laterally) the focus line towards or away from the substrate surface. Include tolerances. This shift of focus is controlled by an automated focusing system as described below with respect to FIGS. 14A-14D. In addition, during preferred use, cleaning gas is pumped into the frame and flows through the gas injector 1104 into the space 1108 between the lenses to cool the lens. This cleaning gas is preferably nitrogen at room temperature (to prevent condensation forming on the lens).

Detection module 912 (A + B + C) preferably includes one or more reflected power detectors 912 (A), one or more emitted power detectors 912 (B), and / or one or more beam splitters 912. (C)). The emitted power detector 912 (B) is configured to detect a portion of the continuous wave electromagnetic radiation emitted from the continuous wave electromagnetic radiation source 908 (A + B), FIGS. 9A and 9B, and the reflected power detector 912 ( A)) is configured to detect a portion of the continuous wave electromagnetic radiation reflected from the surface of the substrate 906. The emitted power detector 912 (B) monitors the output of the continuous wave electromagnetic radiation source, and the reflected power detector 912 (A) monitors the energy absorbed by the substrate, the emission rate, the reflectance, and / or the temperature of the substrate. Used to detect. Suitable emitted power detector 912 (B) and reflected power detector 912 (A) are manufactured by Hamamatsu.

Beam splitter 912 (C) is a portion of the continuous wave electromagnetic radiation emitted by reflecting a portion of the emitted continuous wave electromagnetic radiation that is incident on the substantially flat first surface of the beam splitter toward emitted power detector 912 (B). It is configured to sample. In a preferred embodiment, the planar second surface of the beam splitter 912 (C) opposite the first planar surface is used to reflect the continuous wave electromagnetic radiation reflected from the surface of the substrate to the reflected power detector 912 (A). do. The beam splitter is preferably disposed between the continuous wave electromagnetic radiation source 908 (A + B) and the stage 904 (FIGS. 9A and 9B). Beam splitter 912 (C) is also preferably coated with an antireflective coating such as MgF. In use, beam splitter 912 (C) reflects or samples up to 1% of the continuous wave electromagnetic radiation emitted by continuous wave electromagnetic radiation source 908 (A + B).

In use, the ratio of detected emission power to detected reflected power provides an absorption measure at the substrate. Absorption is the process by which radiant energy is absorbed in accordance with Plank's Law for thermal radiation, converted to other forms of energy such as heat, and re-radiated at longer wavelengths.

In a preferred embodiment, the emitted power detector 912 (B) and the reflected power detector 912 (A) detect 810 nm continuous wave electromagnetic radiation. Also in a preferred embodiment, one or more detectors 912 (A) are configured as temperature detectors for detecting temperature on the substrate in continuous wave electromagnetic radiation. To detect the temperature, the temperature detector detects continuous wave electromagnetic radiation of a wavelength different from 810 nm, such as 1500 nm. This is accomplished by placing the filter 1106 between the reflected continuous wave electromagnetic radiation and the detector 912 (A). The filter 1106 is configured to allow continuous wave electromagnetic radiation having a wavelength different from 810 nm to reach the detector 912 (A) to act as an optical pyrometer and to ensure that the detected signal is an emission signal rather than a reflection from the light source. . That is, only the reflected radiation has a wavelength different from 810 nm. In a preferred embodiment, the filter is configured to allow operation of the optical pyrometer in the wavelength range from 900 nm to 2000 nm, preferably 1500 nm. However, these temperature measurements are sensitive to changes in emission rate.

Reflected power detector 912 (A) and emitted power detector 912 (B) also preferably maximize the detected signal and may be scattered in the light due to the non-zero reflectance of the lens in the device. A pinhole aperture is included to minimize the collection of stray radiation.

In a preferred embodiment comprising 15 and 16 opposing laser diode modules, 15 pairs of reflected power detector 912 (A) and emitted power detector 912 (B) are preferably provided. All other reflected power detectors 912 (A) are preferably configured as temperature detectors as described above.

Alternative embodiments also include a reflector 1110 positioned between the focusing light 910 (A) and the substrate 906. The reflector 1110 is configured to reflect the radiation reflected from the substrate surface into continuous wave electromagnetic radiation. In a preferred embodiment the reflector 1110 is a cylindrical mirror having a center of curvature at the focus of the lens.

12 is an isometric view of a prototype of the device 900 shown in FIGS. 9A and 9B. As shown, a substrate, such as a semiconductor wafer, is located on stage 904 in chamber 1202. The continuous wave electromagnetic radiation module 902 is coupled to the chamber 1202. In addition, a movement mechanism such as movement mechanism 218 (FIG. 2) moves stage 904 relative to the continuous wave electromagnetic radiation module 902 as indicated by arrow 1206. A portion of an electronic device, such as computer system 914 (FIGS. 9A and 9B), is included in housing 1210. Device 900 is preferably coupled to factory interface 1208 to move substrate 906 into and out of device 900.

13 is a flowchart of a method 1320 for controlling thermal processing. If the method 1320 begins as a step 1322, the substrate is oriented onto the stage in step 1323, so that subsequent scans will optimize the thermal process. As substrates of different orientations had different mechanical properties and yield strength was greater in one direction than in the other, it was performed as above. Generally, a notch is provided on the substrate to indicate the crystal direction. The surface of the substrate 904 (FIGS. 9A and 9B) may optionally be coated with a thermal reinforcement layer in step 1324. The thermal reinforcement layer is made from a material having high absorption properties, such as doped polysilicon or silicon nitride, on a buffer layer of oxide, and / or a material having antireflection properties. The thermal reinforcement layer helps to form insensitivity to substrate surface conditions. For example, if the surface of the substrate is very reflective or non-uniform, the thermal enhancement layer helps to maintain a substantially uniform thermal exposure of the substrate.

The substrate is then irradiated with continuous wave electromagnetic radiation emitted from the continuous wave radiation module 902 (FIGS. 9A and 9B) in step 1326 to heat the surface of the substrate for a predetermined time at a predetermined power density. The predetermined power density is preferably at least 30 kW / cm 2 (preferably 100 kW / cm 2) and the predetermined time is preferably in the range of 100 microseconds to 100 milliseconds (preferably about 1 millisecond). This heats the surface of the substrate to a process temperature of about 700 ° C. or more from an ambient temperature of about 500 ° C. or less. At a given depth from the surface, such as 10 times the maximum width of the device structure in Si, the temperature is kept less than the sum of the ambient temperature and (process temperature-ambient temperature) / 2.

As mentioned above, continuous wave electromagnetic radiation may extend across or partially across the entire surface of the substrate.

In an embodiment with a reflector 1110 (FIG. 11), any reflected or scattered light directed to the reflector is reflected towards radiation at step 1328.

The released power is measured by the power detector 912 (B) emitted in step 1330 and transmitted to the computer system 914 (FIGS. 9A and 9B). The reflected power is measured by the reflected power detector 912 (A) in step 1332 and transmitted to the computer system 914 (FIGS. 9A and 9B). Computer system 914 (FIGS. 9A and 9B) compares the reflected power with the emitted power at step 1334 and controls the power supplied to the continuous wave electromagnetic radiation source accordingly at step 1336. For example, continuous wave electromagnetic radiation sources may heat different substrates differently with the same emission power. The computer system may control the power of the power source 916 (FIGS. 9A and 9B) and may alternately control individual laser diode modules, a set of laser diode modules, or all laser diode modules simultaneously. In this way, individual laser diode modules, or combinations of laser diode modules, may be controlled in real time.

In an alternate embodiment, an adjustment mechanism (described below in connection with FIGS. 14A-14D) based on the measured emission power and the reflected power may adjust the height of the stage in real time in step 1335. Adjusting the stage height causes the surface of the substrate to be in and out of focus, thereby controlling the power density of continuous wave electromagnetic radiation on the substrate surface independently from the total power.

The measured reflected and emitted power may be used to calculate the reflectance of the substrate, the release rate of the substrate, the energy absorbed by the substrate, and / or the temperature of the substrate in step 1338. Reflectance is proportional to the reflected power divided by the emitted power. The heat emission signal from the wafer is measured via light and optionally an interleaved combiner at wavelengths longer than the wavelength of the continuous wave electromagnetic radiation source.

Similarly, the temperature is proportional to the absorbed power equal to the emitted power minus the reflected power. The calculated actual temperature is derived from the difference in reflected and emitted power through the detector's calibration. The exact method is similar to existing emission rate correction schemes used for RTP as is known in the art. All such calculations are described in US Pat. No. 6,406,179; 6,226,453; 6,183,130; 6,179,466; 6,179,465; 6,151,446; 6,086,245; 6,056,433; 6,007,241; 5,938,335; 5,848,842; 5,755,511; 5,660,472.

If a heat strengthening layer is provided, it is generally removed at step 1340.

Moreover, in alternative embodiments, thermal exposure uniformity can be improved by over-scanning. Over-scanning uses radiation that is longer than the width of the substrate. After each scan, the radiation is moved slightly along its length in step 1341 so that the overall thermal uniformity is improved if the slow on-axis uniformity degrades with time. Movement of radiation effectively averages the thermal exposure of the substrate.

14A is a partial cross-sectional view of an automated focusing mechanism 1400, and FIG. 14B is a top view of the tooling substrate and stage 1414 taken along line 14B-14B 'shown in FIG. 14A. The automated focusing mechanism 1400 is used to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation module 902 on the upper surface of the substrate.

Focusing mechanism 1400 preferably includes multiple photodiode sensors 1408 embedded in stage 1414. Each photodiode sensor 1408 is electrically coupled to a controller 1404. In a preferred embodiment, five photodiode sensors 1408 are provided, but in order to account for variations in pitch (around X axis), rolls (around Y axis), and a height (around X axis), as generally described below. There must be at least one photodiode sensor 1408. Photodiode sensor 1408 is used during setup of the system to confirm that the upper surface of the tooling substrate is in the focus plane of the continuous wave electromagnetic radiation source.

In a preferred embodiment, a center photodiode sensor is used to set the height, and photodiode sensors on the left and right side of the center photodiode sensor are used to substantially eliminate any tilt or roll (rotation around the Y axis) of the stage. Used. Leading and distal photodiode sensors are used to remove any tip or pitch (rotation around the X axis) of the stage. Adjustment work is based on maximizing the signal of the photodiode sensor.

This confirmation requires a tooling substrate 1412 mounted on the stage 1414 by the substrate mounting robot. The tooling substrate 1412 has a pinhole aperture 1410 directly above each photodiode sensor 1410. The pinhole aperture even has a diameter smaller than the width of the radiation at the best focus.

Controller 1404 is also coupled to regulating mechanism 1402. The adjustment mechanism 1402 raises or lowers the stage 1414 (along the Z axis), adjusts the pitch (around the X axis), as required by the controller to focus continuous wave electromagnetic radiation on the surface of the tooling substrate. , Or to adjust the roll (around the Y axis).

In a preferred embodiment, the adjustment mechanism 1402 includes three or more racks and pinion drives 1406, each of which is rotatably coupled to the stage at one end of the screws of the rack and pinion drive. In use, if all three racks and pinion drives 1406 are raised or lowered together, the stage 904 is raised or lowered. However, the pitch and roll of the stage can be adjusted if the individual rack and pinion drive 1406 are lowered or raised. However, it should be appreciated that any suitable adjustment mechanism 1402 may be used.

The controller 1404 is also coupled to the moving mechanism 218 to move the continuous wave electromagnetic radiation source 908 (A + B) and the stage 904 relative to each other.

14C is a flow chart 1420 of a method for automatically concentrating continuous wave electromagnetic radiation onto a top surface of a substrate. If the method begins at step 1422, a tooling substrate 1412 (FIG. 14A) is positioned on the stage at step 1424. The continuous wave electromagnetic radiation source 908 (A + B) emits a first photodiode sensor 1408 (FIG. 14A), such as a central photodiode, located below the center of the tooling substrate at step 1426. The first photodiode sensor provides a measurement used for absolute height adjustment. The first photodiode sensor measures the intensity of the continuous wave electromagnetic radiation at step 1428 and transmits the intensity to the controller 1404 (FIG. 14A). The controller directs the adjustment mechanism 1402 (FIG. 14A) to adjust the height of the stage at step 1430. FIG. The height is adjusted along the Z axis by the rising or falling of the stage 904 (FIG. 14A) by the adjusting mechanism until the light line is concentrated at the aperture in front of the first photodiode sensor.

The controller then directs the movement mechanism to move the continuous wave electromagnetic radiation module and stage relative to each other at step 1431, so that the next photodiode is aligned with the radiation. The next photodiode sensor 1408 (FIG. 14A) is irradiated at step 1432. The intensity of the continuous wave electromagnetic radiation measured at the photodiode sensor is measured at step 1434 and transmitted to the controller 1404 (FIG. 14A). The controller may adjust the adjustment mechanism 1402 to adjust the pitch and / or roll of the stage by tilting the stage around the X and Y axes as needed to ensure that light lines are concentrated at the photodiode sensor in step 1434. Instruct. The controller then determines in step 1438 whether the setup has been completed, i.e. the measurements have been taken from all photodiode sensors. If the method is not complete (1438-No), the radiation module and stage are moved relative to each other until the next photodiode is aligned with the photodiode and radiation irradiated in step 1432, the method wherein the light lines Repeat until concentrated at all points along the surface. Once the method is complete (1438-Yes), the method is completed in step 1440.

The method may be iterative. Alternatively, a complete scan in the Z direction may be performed for all detectors before adjustment. In this way, the plane of the tooling wafer relative to the focus plane is known to the system. At this time, the three servos properly adjust the two planes to coincide.

In a preferred embodiment, after the height is adjusted, the tilt or roll is removed using the left and right photodiode sensors, and if the stage is tilted or rolled, it will be in and out of focus at different heights. Once the tilt or roll is removed, the substrate is moved to the leading edge photo diode sensor and another through focus data set is collected. It becomes zero when the center photodiode sensor and the leading edge photodiode sensor have the same through focus at the same height. The end edge photodiode sensor is used to confirm that the stage is at the actual level.

FIG. 14D is a graph 1450 of the measured energy density 1454 (normalized signal) versus the height of the stage, with 0 at the best focus in aperture 1410 (FIG. 14A). Through focus is shown at 1452. As shown, the energy density is highest at 1456 when the light lines are concentrated at the aperture. Also shown is the focal size, ie the area where the energy is distributed. A spot is a shape in which the image of the laser diode is in the focus plane. To simplify the analysis, a rotatable symmetrical lens is assumed, that is why spots rather than lines are used for the analysis. In practical use, however, the spot is preferably a long line with a spreading width.

Thus, the focusing mechanism 1400 (FIG. 14A) ensures good focus for all substrates. It also allows the line width to be varied without having to appeal to movable light, i.e. the power density at the substrate surface can be adjusted independently by adjusting the height of the stage without adjusting the total power output by the continuous wave electromagnetic radiation source. Can be.

Moreover, the system, apparatus, or method described above may be used with an implanter or plasma doping (PLAD). The method described above may also be used for a back end thermal process requiring the use of a high power continuous wave electromagnetic radiation laser source operating in or near the UV. If this back end thermal process is copper reflow, the wavelength generated by this laser source is strongly absorbed by the best material, including copper.

In addition, the apparatus and method described above may be used for isotropic etching and / or ashing, such as etching of photoresist from a substrate surface. This isotropic etching and / or ashing does not require the use of a plasma and does not have plasma damage problems such as those caused by hot electrons.

In addition, the apparatus and method described above may be used for all flat panel annealing. Current laser recrystallization processes raster laser spots across the surface of a flat panel. Recrystallization generally proceeds radially, making speed and overscanning an important process control variable. However, using the present invention, recrystallization proceeds from a wide and continuous front, resulting in the formation of larger grain sizes due to the reduced degrees of freedom for recrystallization. However, in the present invention, recrystallization occurs in front of and behind the radiation, making the scan speed an important variable.

The apparatus and method described above may also be used to activate past the a-c / Si interface to improve p-n junction leakage, where a-c is an amorphous-crystalline interface. A problem associated with current annealing methods is that not all faults are annealed at the initial a-c interface. These defects are end-of-range (EOR) defects for amorphous implants. If these defects remain in the junction region (depletion region) where the voltage is maintained, the normal array assumption for silicon is less complete and leakage will occur. In the present invention, however, the thermal exposure can be formed long enough to move the junction region deeper beyond the EOR defect. Pulsed lasers are not suitable for doing this because diffusion cannot occur due to short pulse lengths of microseconds or less.

The foregoing descriptions of specific embodiments of the present invention are provided for purposes of illustration and description. They are not intended to be exhaustive or to limit the invention to the forms disclosed. Obviously many modifications and variations are possible in light of the above teaching. For example, although one beam splitter has been disclosed for reflecting continuous wave electromagnetic radiation toward reflected power detector 912 (A) and emitted power detector 912 (B), one or more beam splitters may be used. . Having described the principles and practical applications of the present invention, embodiments are selected and disclosed in order to enable those skilled in the art to best utilize the present invention and various embodiments with various modifications as are suited to the particular use envisioned. Moreover, the order of steps in the method need not occur in a set process. The scope of the invention is defined by the following claims and their equivalents. In addition, certain citations are incorporated herein by reference.

Claims (138)

As a thermal processing device, A stage configured to receive a substrate thereon; A continuous wave electromagnetic radiation source disposed adjacent the stage; A series of lenses disposed between the continuous wave electromagnetic radiation source and the stage; And A movement mechanism configured to move the stage and the one continuous wave electromagnetic radiation with respect to each other, The continuous wave electromagnetic radiation source is configured to emit continuous wave electromagnetic radiation along a path towards the substrate, The series of lenses is configured to focus the continuous wave electromagnetic radiation onto one continuous wave electromagnetic radiation on a surface of the substrate, Thermal processing unit. The method of claim 1, Further comprising a detection module located within the path, The detection module is configured to detect continuous wave electromagnetic radiation, Thermal processing unit. The method of claim 2, Further comprising a computer system coupled to the detection module, Thermal processing unit. The method of claim 2, The detection module is disposed between the series of lenses, Thermal processing unit. The method of claim 2, The detection module comprises one or more emitted power detectors configured to detect continuous wave electromagnetic radiation emitted from the continuous wave electromagnetic radiation source; Thermal processing unit. The method of claim 2, The detection module comprises one or more reflected power detectors configured to detect continuous wave electromagnetic radiation reflected from the surface; Thermal processing unit. The method of claim 1, Further comprising an enlarged lens disposed between said continuous wave electromagnetic radiation source and said series of lenses, Thermal processing unit. The method of claim 7, wherein Further comprising a detection module disposed between the magnifying lens and the series of lenses, Thermal processing unit. The method of claim 1, The width of the one continuous wave electromagnetic radiation is 500 microns or less, Thermal processing unit. The method of claim 1, The one continuous wave electromagnetic radiation has a power density of at least 30 kW / cm 2, Thermal processing unit. The method of claim 1, The detection module, One or more emitted power detectors configured to detect continuous wave electromagnetic radiation emitted from the continuous wave electromagnetic radiation source; And One or more reflected power detectors configured to detect continuous wave electromagnetic radiation reflected from the surface, Thermal processing unit. The method of claim 11, wherein One or more beam splitters for sampling a portion of the emitted continuous wave electromagnetic radiation, Thermal processing unit. The method of claim 12, The at least one beam splitter is disposed between the continuous wave electromagnetic radiation module and the stage, Thermal processing unit. The method of claim 11, wherein One or more beam splitters for sampling a portion of the reflected continuous wave electromagnetic radiation, Thermal processing unit. The method of claim 11, wherein One or more beam splitters for sampling the emitted continuous wave electromagnetic radiation and a portion of the reflected continuous wave electromagnetic radiation; Thermal processing unit. The method of claim 11, wherein The one or more emitted power detectors and the one or more reflected power detectors detect 810 nm continuous wave electromagnetic radiation; Thermal processing unit. The method of claim 11, wherein The detection module further comprises one or more temperature detectors configured to detect the temperature of the surface in the one continuous wave electromagnetic radiation, Thermal processing unit. The method of claim 17, The one or more temperature detectors detect continuous wave electromagnetic radiation of a wavelength different from 810 nm, Thermal processing unit. The method of claim 18, A filter disposed between the temperature detector and the continuous wave electromagnetic radiation, The filter is configured such that only continuous wave electromagnetic radiation having a wavelength different from 810 nm reaches the temperature detector, Thermal processing unit. The method of claim 19, The filter is configured to allow optical pyrometer operation in the range of 900 nm to 2000 nm. Thermal processing unit. The method of claim 19, The filter is configured to allow optical pyrometer operation at 1500 nm, Thermal processing unit. The method of claim 11, wherein Further comprising a computer system coupled to the detection module, Determining emitted power emitted by the one or more emitted power detectors; Determining reflected power reflected by the one or more reflected power detectors; And Controlling the power supplied to the continuous wave electromagnetic radiation source based on the emitted power and the reflected power; Thermal processing unit. The method of claim 22, The computer system includes a reflectance process for determining reflectance, The reflectance is proportional to the reflected power divided by the reflected power, Thermal processing unit. The method of claim 22, The computer system further comprises a temperature process for determining the temperature of the surface in the one continuous wave radiation, The temperature is proportional to the absorbed power equal to the emitted power minus the reflected power, Thermal processing unit. The method of claim 1, The series of lenses further comprises one or more magnification lenses disposed between the continuous wave electromagnetic radiation source and the stage, The at least one magnifying lens is configured to enlarge the continuous wave electromagnetic radiation beam emitted from the continuous wave electromagnetic radiation source into an enlarged continuous wave electromagnetic radiation beam, Thermal processing unit. The method of claim 1, The series of lenses further comprises multiple cylindrical lenses arranged in a row between the continuous wave electromagnetic radiation source and the stage, The multi-cylindrical lens is configured to focus the continuous wave electromagnetic radiation into the one continuous wave electromagnetic radiation, Thermal processing unit. The method of claim 1, The continuous wave electromagnetic radiation source comprises multiple sets of opposing laser diode modules, Thermal processing unit. The method of claim 27, Each of said multiple sets of opposing laser diode modules is controlled separately, Thermal processing unit. The method of claim 27, Further comprising a separate detection module for each set of laser diodes, Thermal processing unit. The method of claim 1, Further comprising an interleaved combiner disposed between the continuous wave electromagnetic radiation source and the series of lenses, Thermal processing unit. The method of claim 30, The interleaved combiner uses a dielectric stack for enhanced reflection at continuous wave electromagnetic radiation wavelengths, Thermal processing unit. The method of claim 30, The thermal emission signal from the substrate is measured through the interleaved combiner as well as the series of lenses at wavelengths longer than the wavelength of the continuous wave electromagnetic radiation, Thermal processing unit. The method of claim 30, The interleaved combiner uses fill ratio enhancement light to reduce the size of the series of lenses, Thermal processing unit. The method of claim 1, Further comprising an adjustment mechanism configured to move the continuous wave electromagnetic radiation source and the stage relative to each other, Thermal processing unit. The method of claim 34, wherein A detection module located within the path and configured to detect continuous wave electromagnetic radiation, and a computer system coupled to the detection module, The computer system controls the adjustment mechanism based on measurements by the detection module to maintain the one continuous wave radiation focused on the substrate, Thermal processing unit. The method of claim 1, Further comprising at least one reflective surface for redirecting the scattered continuous wave radiation towards the one continuous wave radiation, Thermal processing unit. The method of claim 1, Coupling the thermal processing device to an ion implanter or plasma doping (PLAD), Thermal processing unit. While maintaining the temperature T _D at a predetermined depth from the surface of the substrate below the sum of the ambient temperature and the (process temperature-ambient temperature) / 2 [T _D ≤ T _A + (T _P -T _A ) / 2] Heating the surface of the substrate at a predetermined power density for a predetermined time such that the surface of the substrate is heated from the ambient temperature T _A to the process temperature T _P , Thermal processing method. The method of claim 38, The predetermined power density is 30 kW / cm 2 or more, Thermal processing method. The method of claim 38, The predetermined time is in the range of 100 microseconds to 100 milliseconds, Thermal processing method. The method of claim 38, The ambient temperature is about 500 ° C. or less, Thermal processing method. The method of claim 38, The process temperature is at least about 700 ° C., Thermal processing method. The method of claim 38, The predetermined depth is ten times the depth of interest, Thermal processing method. The method of claim 43, The depth of interest is the maximum depth of the device structure in silicon, Thermal processing method. The method of claim 38, Initially coating the surface with a heat reinforcing layer, Thermal processing method. The method of claim 38, Said heating step comprises concentrating continuous wave electromagnetic radiation from a continuous wave electromagnetic radiation source into one radiation extending across the surface of said substrate, Thermal processing method. The method of claim 46, Moving the one continuous wave electromagnetic radiation at a constant predetermined rate relative to the surface such that all points of the substrate have substantially the same thermal exposure, Thermal processing method. The method of claim 46, Reflecting all of the scattered continuous wave electromagnetic radiation towards the one radiation, Thermal processing method. The method of claim 46, Measuring the emitted power of the continuous wave electromagnetic radiation used to heat the surface; Thermal processing method. The method of claim 49, Measuring the reflected power of continuous wave electromagnetic radiation reflected from the surface, Thermal processing method. 51. The method of claim 50 wherein Further comparing the reflected power with the emitted power; Thermal processing method. The method of claim 51, wherein Controlling the power supplied to the continuous wave electromagnetic radiation source based on the comparing step; Thermal processing method. The method of claim 46, Separately measuring thermal emission from the substrate at the focus of the continuous wave electromagnetic radiation at a wavelength substantially different from the reflected continuous wave electromagnetic radiation, Thermal processing method. The method of claim 46, Determining the temperature of the surface at the one radiation; Thermal processing method. The method of claim 46, Determining a property of the substrate selected from the group consisting of absorbance, reflectance, and emission rate, Thermal processing method. The method of claim 46, Selecting an optimal orientation of the substrate relative to the scan direction prior to the concentrating step, The optimal orientation is determined by ensuring a scan direction having a minimum overlap with the principle slip plane of the substrate, Thermal processing method. The method of claim 46, Further comprising the step of preheating the substrate, Thermal processing method. The method of claim 57, The preheating step consists of one or more prescans by the continuous wave electromagnetic radiation source, Thermal processing method. The method of claim 57, The preheating step uses a hot plate, Thermal processing method. As a thermal processing device, A continuous wave electromagnetic radiation source configured to emit a continuous wave electromagnetic radiation beam; A stage configured to receive a substrate thereon; At least one magnifying lens disposed between the continuous wave electromagnetic radiation source and the stage; Multiple cylindrical lenses arranged in a row between the one or more magnification lenses and the stage; And A movement mechanism configured to move the stage and the continuous wave electromagnetic radiation beam relative to each other, The at least one magnifying lens is configured to enlarge the continuous wave electromagnetic radiation beam with an enlarged continuous wave electromagnetic radiation beam, The multi-cylindrical lens is configured to focus the extended continuous wave electromagnetic radiation beam into one continuous wave electromagnetic radiation on the surface of the substrate, Thermal processing unit. The method of claim 60, Wherein said at least one magnifying lens comprises two magnifying lenses, Thermal processing unit. The method of claim 60, The multi-cylindrical lens has a spherical shape, Thermal processing unit. The method of claim 60, The multi-cylindrical lens has an aspherical shape, Thermal processing unit. The method of claim 60, Part of the multi-cylindrical lens has a spherical shape and the other part has a different shape, Thermal processing unit. The method of claim 60, Further comprising a gas injector around the multiple cylindrical lens to circulate a cooling cleaning gas between the multiple lenses, Thermal processing unit. The method of claim 60, The continuous wave electromagnetic radiation source emits continuous wave electromagnetic radiation having a power density of at least 30 kW / cm 2 at the best focus, Thermal processing unit. An automatic focusing mechanism for a thermal processing device, A continuous wave electromagnetic radiation module configured to focus the continuous wave electromagnetic radiation into one continuous wave electromagnetic radiation on a surface of the substrate; A stage configured to receive a substrate thereon; One or more photo detectors coupled to the stage; A movement mechanism configured to move the stage and the continuous wave electromagnetic radiation module relative to each other; An adjustment mechanism coupled to the stage; And A controller coupled to the continuous wave electromagnetic radiation module, the one or more photo detectors, the movement mechanism, and the adjustment mechanism, The at least one photo detector is configured to measure the intensity of the continuous wave electromagnetic radiation, The adjustment mechanism is configured to adjust the height, roll and pitch of the stage, Auto focusing mechanism. The method of claim 67 wherein The at least one photo detector comprises three photo detectors embedded in the stage, Auto focusing mechanism. The method of claim 67 wherein The one or more photo detectors and the controller are configured to measure the pitch, roll, and height of the stage relative to the continuous wave electromagnetic radiation module, Auto focusing mechanism. The method of claim 67 wherein The continuous wave electromagnetic radiation module; Continuous wave electromagnetic radiation source; And A light disposed between the continuous wave electromagnetic radiation source and the stage, the light configured to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into the one radiation; Auto focusing mechanism. A method of automatically focusing one continuous wave electromagnetic radiation on a surface of a substrate, Providing a continuous wave electromagnetic radiation source; Providing a stage with one or more photo detectors coupled; Positioning a tooling substrate having at least one aperture through the stage; Radiating the one or more apertures with continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source; Measuring the intensity of the continuous wave electromagnetic radiation at the one or more photo detectors; And Adjusting the position of the stage and the continuous wave electromagnetic radiation with each other based on the intensity, The at least one photo detector is configured to measure the intensity of the continuous wave electromagnetic radiation, The at least one aperture aligned with the at least one photo detector, Automatic focusing method of one continuous wave electromagnetic radiation. The method of claim 71 wherein The adjusting step adjusts the height, pitch, or roll with respect to each other of the stage and the continuous wave electromagnetic radiation source, Automatic focusing method of one continuous wave electromagnetic radiation. The method of claim 71 wherein Moving the stage and the continuous wave electromagnetic radiation source laterally relative to each other to align another aperture and another aperture in the tooling substrate; Exposing the another aperture to continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source; Sensing another intensity of the continuous wave electromagnetic radiation at the another photo detector; And Setting the position of the stage and the continuous wave electromagnetic radiation source relative to each other based on the another intensity, Automatic focusing method of one continuous wave electromagnetic radiation. The method of claim 73, wherein Repeating the moving, exposing, sensing, and setting steps until the stage is at a predetermined position with respect to the continuous wave electromagnetic radiation source. Automatic focusing method of one continuous wave electromagnetic radiation. A method of thermally processing a semiconductor substrate, Concentrating the continuous wave electromagnetic radiation into one continuous wave electromagnetic radiation that extends partially across the surface of the semiconductor substrate; Moving the one continuous wave electromagnetic radiation and the surface at a constant predetermined speed relative to each other; Moving the one radiation slightly along its length; And Moving said one continuous wave electromagnetic radiation and said surface at said constant speed relative to one another such that all exposed points of said semiconductor substrate have substantially uniform thermal exposure, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein The concentration step, While maintaining the temperature T _D at a predetermined depth from the surface of the substrate below the sum of the ambient temperature and the (process temperature-ambient temperature) / 2 [T _D ≤ T _A + (T _P -T _A ) / 2] Heating the surface at a predetermined power density for a predetermined time such that the surface of the substrate is heated from ambient temperature T _A to process temperature T _P , A method of thermally processing a semiconductor substrate. 77. The method of claim 76, The predetermined power density is 30 kW / cm 2 or more, A method of thermally processing a semiconductor substrate. 77. The method of claim 76, The predetermined time is in the range of 100 microseconds to 100 milliseconds, A method of thermally processing a semiconductor substrate. 77. The method of claim 76, The ambient temperature is about 500 ° C. or less, A method of thermally processing a semiconductor substrate. 77. The method of claim 76, The process temperature is at least about 700 ° C., A method of thermally processing a semiconductor substrate. 77. The method of claim 76, The predetermined depth is ten times the depth of interest, A method of thermally processing a semiconductor substrate. 82. The method of claim 81 wherein The depth of interest is the maximum depth of the device structure in silicon, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Wherein the width of one continuous wave electromagnetic radiation is less than 500 microns, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Initially coating the substrate with a thermal reinforcement layer, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Further reflecting back all scattered continuous wave electromagnetic radiation towards the one radiation, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Further comprising measuring the emitted power of the continuous wave electromagnetic radiation, A method of thermally processing a semiconductor substrate. 87. The method of claim 86, Measuring the reflected power of the continuous wave electromagnetic radiation reflected from the surface, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Separately measuring thermal emission from said substrate at the focus of said one continuous wave electromagnetic radiation at a wavelength substantially different from reflected continuous wave electromagnetic radiation, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Determining the temperature of the surface at the one radiation; A method of thermally processing a semiconductor substrate. 88. The method of claim 87, Further comprising comparing the reflected power with the emitted power; A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Controlling the power supplied to the continuous wave electromagnetic radiation source; A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Determining a property of the substrate selected from the group consisting of absorbance, reflectance, and emission rate, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Selecting an optimal orientation of the substrate relative to the scan direction prior to the concentrating step, The optimal orientation is determined by ensuring a scan direction having a minimum overlap with the principle slip plane of the substrate, A method of thermally processing a semiconductor substrate. 76. The method of claim 75 wherein Further comprising the step of preheating the substrate, A method of thermally processing a semiconductor substrate. 95. The method of claim 94, The preheating step consists of one or more prescans by the continuous wave electromagnetic radiation source, A method of thermally processing a semiconductor substrate. 95. The method of claim 94, The preheating step uses a hot plate, A method of thermally processing a semiconductor substrate. An apparatus for depositing a layer on a substrate, Reaction chamber; A gas injector configured to inject one or more gases into the reaction chamber; Continuous wave electromagnetic radiation source; A stage in the reaction chamber and configured to receive a substrate thereon; Light disposed between the continuous wave electromagnetic radiation source and the stage, the light configured to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into one continuous wave electromagnetic radiation on a surface of the substrate; And A movement mechanism configured to move the stage and the one continuous wave electromagnetic radiation with respect to each other, The length of the one continuous wave electromagnetic radiation extends across the substrate, A device for depositing a layer on a substrate. 97. The method of claim 97, Wherein the one continuous wave electromagnetic radiation extends entirely across the width of the substrate, A device for depositing a layer on a substrate. 97. The method of claim 97, The continuous wave electromagnetic radiation source is one or more lasers, A device for depositing a layer on a substrate. 97. The method of claim 97, The continuous wave electromagnetic radiation source is one or more laser diodes, A device for depositing a layer on a substrate. 97. The method of claim 97, The continuous wave electromagnetic radiation source has a power in the range of 0.5 kW to 50 kW, A device for depositing a layer on a substrate. 97. The method of claim 97, The continuous wave electromagnetic radiation source has a power of about 5 kW, A device for depositing a layer on a substrate. 97. The method of claim 97, Wherein the one radiation has a power density in the range of 10 kW / cm 2 to 200 kW / cm 2, A device for depositing a layer on a substrate. 97. The method of claim 97, The stage includes means for firmly holding the substrate; A device for depositing a layer on a substrate. 97. The method of claim 97, The light comprises one or more collimators and one or more lenses configured to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into one continuous wave electromagnetic radiation at the top surface of the substrate, A device for depositing a layer on a substrate. 97. The method of claim 97, The light comprises one or more cylindrical lenses configured to focus continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source into one continuous wave electromagnetic radiation at the top surface of the substrate; A device for depositing a layer on a substrate. 97. The method of claim 97, The light may be cylindrical lenses, collimators, optical fibers, waveguides, diffusers, diffractive lenses, Fresnel lenses, concave lenses, convex lenses, flat mirrors, concave mirrors, convex mirrors, refractive lenses, gradient index lenses, and these Selected from the group consisting of one or more combinations of A device for depositing a layer on a substrate. 97. The method of claim 97, And a controller for controlling the speed of the movement mechanism. A device for depositing a layer on a substrate. 97. The method of claim 97, The moving mechanism moves the stage and the one continuous wave electromagnetic radiation at a constant speed relative to each other, A device for depositing a layer on a substrate. 97. The method of claim 97, The movement mechanism is coupled to the stage, A device for depositing a layer on a substrate. 97. The method of claim 97, The movement mechanism is coupled to the light, A device for depositing a layer on a substrate. 97. The method of claim 97, The movement mechanism is coupled to the light and the continuous wave electromagnetic radiation source, A device for depositing a layer on a substrate. 97. The method of claim 97, The moving mechanism moves the stage and the one continuous wave electromagnetic radiation with respect to each other in a direction substantially perpendicular to the one radiation, A device for depositing a layer on a substrate. 97. The method of claim 97, The substrate is selected from the group consisting of a single crystal silicon substrate, silicon on insulator (SOI), silicon germanium, an alloy of silicon germanium, glass, and quartz, A device for depositing a layer on a substrate. 97. The method of claim 97, Said one radiation having a width of about 3 to 500 microns, A device for depositing a layer on a substrate. 97. The method of claim 97, The device has a temperature ramp-up ratio of at least 1 × 10 ⁶ ° C / sec, A device for depositing a layer on a substrate. 97. The method of claim 97, The device has a temperature ramp-down ratio of at least 1 × 10 ⁶ ° C / sec, A device for depositing a layer on a substrate. 97. The method of claim 97, The continuous wave electromagnetic radiation from the continuous wave electromagnetic radiation source has a wavelength in the range of 190 nm to 950 nm, A device for depositing a layer on a substrate. A method of depositing a layer on a substrate, Positioning the substrate in the reaction chamber; Introducing at least one gas into the reaction chamber; Concentrating continuous wave electromagnetic radiation into one radiation extending across the surface of the substrate; And Moving the one radiation at a constant predetermined rate relative to the surface such that the one or more gases react with a combination of heat generated by the radiation and the one or more gases to deposit a layer on the surface of the substrate. Included, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Prior to the concentrating step, select from the group consisting of a thermal recipe for processing the substrate, the characteristics of the substrate, the power of the continuous wave electromagnetic radiation, the width of one radiation, the power density at the one radiation, and combinations thereof Determining the constant predetermined speed based on a factor of being; A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Before the concentrating step, emitting the continuous wave electromagnetic radiation from the one or more laser diodes, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Before the concentrating step, emitting the continuous wave electromagnetic radiation, The continuous wave electromagnetic radiation is uniform coherent radiation having a single wavelength, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Before the concentrating step, emitting the continuous wave electromagnetic radiation, The continuous wave electromagnetic radiation is not pulsed or flashed, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Prior to said concentrating step, comprising collating said continuous wave electromagnetic radiation, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Further comprising repeating the inflow, concentrating, and moving steps to form the layer having a predetermined thickness, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Further comprising controlling the temperature of the continuous wave electromagnetic radiation, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Controlling the amount of said one or more gases entering said reaction chamber, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Controlling the pressure in the reaction chamber, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein The introducing step comprises injecting multiple gases into the reaction chamber, A method of depositing a layer on a substrate. 119. The method of claim 119 wherein Controlling the ratio of the multiple gases entering the reaction chamber, A method of depositing a layer on a substrate. A method of thermally processing a substrate, Focusing continuous wave electromagnetic radiation into one radiation extending across the entire surface of the substrate; And Moving the one radiation at a constant predetermined rate relative to the surface such that all points of the substrate have substantially uniform thermal exposure, A method of thermally processing a substrate. The method of claim 131, wherein Prior to the concentrating step, select from the group consisting of a thermal recipe for processing the substrate, the characteristics of the substrate, the power of the continuous wave electromagnetic radiation, the width of one radiation, the power density at the one radiation, and combinations thereof Determining the constant predetermined speed based on a factor of being; A method of thermally processing a substrate. The method of claim 131, wherein Before the concentrating step, emitting the continuous wave electromagnetic radiation from the one or more laser diodes, A method of thermally processing a substrate. The method of claim 131, wherein Before the concentrating step, emitting the continuous wave electromagnetic radiation, The continuous wave electromagnetic radiation is uniform coherent radiation having a single wavelength, A method of thermally processing a substrate. The method of claim 131, wherein Before the concentrating step, emitting the continuous wave electromagnetic radiation, The continuous wave electromagnetic radiation is not pulsed or flashed, A method of thermally processing a substrate. The method of claim 131, wherein Prior to said concentrating step, comprising collating said continuous wave electromagnetic radiation, A method of thermally processing a substrate. The method of claim 131, wherein The substrate is selected from the group consisting of a single crystal silicon substrate, silicon on insulator (SOI), silicon germanium, an alloy of silicon germanium, glass, and quartz, A method of thermally processing a substrate. Scanning the upper surface of the substrate with a single continuous wave electromagnetic radiation at a constant predetermined rate such that all points of the substrate have substantially uniform thermal exposure, A method of thermally processing a substrate.