TWI394014B - Peripheral exposure device - Google Patents

Peripheral exposure device Download PDF

Info

Publication number
TWI394014B
TWI394014B TW095108061A TW95108061A TWI394014B TW I394014 B TWI394014 B TW I394014B TW 095108061 A TW095108061 A TW 095108061A TW 95108061 A TW95108061 A TW 95108061A TW I394014 B TWI394014 B TW I394014B
Authority
TW
Taiwan
Prior art keywords
light
peripheral exposure
exposure
emitting diode
peripheral
Prior art date
Application number
TW095108061A
Other languages
Chinese (zh)
Other versions
TW200643652A (en
Inventor
Masanori Tao
Hiroki Tanikawa
Takeshi Tsuneyoshi
Original Assignee
Toray Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Eng Co Ltd filed Critical Toray Eng Co Ltd
Publication of TW200643652A publication Critical patent/TW200643652A/en
Application granted granted Critical
Publication of TWI394014B publication Critical patent/TWI394014B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature

Description

周邊曝光裝置Peripheral exposure device

本發明係有關用以將液晶用玻璃基板、半導體晶圓、感光膜等曝光對象物之周邊特定位置進行曝光之周邊曝光裝置。The present invention relates to a peripheral exposure apparatus for exposing a specific position around an exposure target such as a glass substrate for a liquid crystal, a semiconductor wafer, or a photosensitive film.

自以往係提供用以將液晶用玻璃基板、半導體晶圓、感光膜等曝光對象物之周邊特定位置進行曝光之周邊曝光裝置,並供實用。Conventionally, a peripheral exposure device for exposing a specific position around an exposure target such as a glass substrate for a liquid crystal, a semiconductor wafer, or a photosensitive film has been provided.

於液晶顯示面板或半導體晶圓等基板形成布線圖案時,首先於基板全面塗佈抗蝕劑,藉由光微影法圖案化成所需形狀而製作布線圖案;通常以在基板周邊部製作寬度數mm程度之帶狀留白之方式,決定掩模圖案之曝光位置。When forming a wiring pattern on a substrate such as a liquid crystal display panel or a semiconductor wafer, first, a resist is entirely applied to the substrate, and a wiring pattern is formed by patterning into a desired shape by photolithography; usually, it is formed on the peripheral portion of the substrate. The manner in which the width of the strip is a few mm in width determines the exposure position of the mask pattern.

因此,若於光微影步驟使用正型抗蝕劑,顯影處理後,會於基板周邊部呈帶狀地殘留未曝光之抗蝕劑。此殘留抗蝕劑不僅不需要,而且於後續之製造步驟中會成為微塵,因此作為生產量降低之要因而成為重大問題。因此,須將基板周邊部不需要之抗蝕劑區域進行曝光、顯影而除去。Therefore, if a positive resist is used in the photolithography step, the unexposed resist remains in a strip shape at the peripheral portion of the substrate after the development treatment. This residual resist is not only unnecessary, but also becomes fine dust in the subsequent manufacturing steps, and thus becomes a major problem as the production amount is lowered. Therefore, it is necessary to expose and develop the resist region which is not required in the peripheral portion of the substrate.

考慮此問題,自以往作為方形基板之周邊曝光裝置,據知有例如日本特開平11-154639號公報、日本特開平5-190448號公報所記載之裝置。In view of the above, an apparatus disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei.

於日本特開平11-154639號公報、日本特開平5-190448號公報所記載之裝置中,將基板周邊部之一處曝光時,作為1個光源係使用1盞放電燈,於其內部具備反射鏡、透鏡群、波長遮蔽濾光器,一面將自該處放射之光照射於基板周邊部,一面使基板或光源移動,藉此可使基板周邊部曝光。此外,藉由空冷達成光源之冷卻,自該處產生之暖氣則以送風機進行排氣。In the device described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The mirror, the lens group, and the wavelength shielding filter expose the peripheral portion of the substrate by irradiating the light emitted from the portion to the peripheral portion of the substrate while moving the substrate or the light source. In addition, the cooling of the light source is achieved by air cooling, and the heating generated therefrom is exhausted by the blower.

於日本特開平11-154639號公報、日本特開平5-190448號公報所記載之裝置中,由於作為1個光源係使用1盞放電燈,因此發生以下問題點。In the device described in Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei.

由於放電燈之待機時間及暖機時間長,因此不進行周邊曝光時,仍須始終將放電燈點燈,放電燈之使用壽命縮短,耗電會必要以上地變多,伴隨於放電燈之交換變得頻繁,作業性亦惡化。Due to the long standby time and warm-up time of the discharge lamp, the discharge lamp must always be lit when the peripheral exposure is not performed, and the service life of the discharge lamp is shortened, and the power consumption will be increased more and more, accompanied by the exchange of the discharge lamp. It becomes frequent and the workability deteriorates.

由於放電燈之發熱量多,因此冷卻需要龐大之送風機。Since the discharge lamp generates a large amount of heat, a large blower is required for cooling.

由於放電燈之內部使用水銀,因此放電燈破損時,對作業人員之健康危害甚大,或處理廢棄之放電燈時,環境負擔甚大。Since the inside of the discharge lamp uses mercury, the damage of the discharge lamp is very harmful to the health of the worker, or the environmental burden is very large when the discharge lamp is disposed of.

由於放電燈為大型構造,與其相關之部分之裝置亦不得不變得大型。Since the discharge lamp has a large structure, the device associated with it has to be made large.

放電燈之輸出光之波長分布帶廣,無關於感光之波長帶亦發光,因此浪費之耗電變多。The output light of the discharge lamp has a wide wavelength distribution, and the wavelength band of the photosensitive light is also illuminated, so that the waste of power consumption is increased.

由於在放電燈中,電能量之大部分轉換成熱能量,因此浪費之耗電變多。Since most of the electric energy is converted into thermal energy in the discharge lamp, the wasted power consumption is increased.

由於放電燈之輸出光含紅外線,因此對基板不僅進行曝光,亦造成熱影響。Since the output light of the discharge lamp contains infrared rays, the substrate is not only exposed but also thermally affected.

由於放電燈之使用壽命短,因此必須頻繁地進行交換。Since the life of the discharge lamp is short, it is necessary to exchange frequently.

由於放電燈之輸出光之波長分布帶廣,照射無關於感光之波長帶之光,因此對基板造成光學負載,為了防止其而必須設置濾光器,以便使不需要之波長帶之光不會照射於照射部分。Since the wavelength distribution of the output light of the discharge lamp is wide, the light of the wavelength band of the photosensitive light is irradiated, so that the optical load is applied to the substrate, and in order to prevent it, a filter must be provided so that the light of the unnecessary wavelength band is not Irradiation to the illuminated portion.

本發明係有鑑於上述問題點所實現,其目的在於提供一種周邊曝光裝置,其係可實現小型化、簡單化,並且可大幅降低對曝光對象物所造成之不良影響,而且不伴隨浪費之耗電而可將曝光對象物之周邊區域進行曝光。The present invention has been made in view of the above problems, and an object thereof is to provide a peripheral exposure apparatus which can be reduced in size and simplification, and can greatly reduce adverse effects on an object to be exposed without causing waste. The peripheral region of the object to be exposed can be exposed to electricity.

本發明之周邊曝光裝置係對應於曝光對象物之周邊特定位置,配置包含放射紫外線之發光二極體之周邊曝光用光源而成。In the peripheral exposure apparatus of the present invention, a peripheral exposure light source including a light-emitting diode that emits ultraviolet rays is disposed in accordance with a specific position around the exposure target.

於此,周邊曝光用光源亦可包含以保持特定相對關係之狀態排列之複數發光二極體,或包含排列成矩陣狀之複數發光二極體。此外,周邊曝光用光源亦可將自發光二極體放射之光,直接照射於曝光對象物之周邊特定位置。Herein, the peripheral exposure light source may include a plurality of light emitting diodes arranged in a state of maintaining a specific relative relationship, or a plurality of light emitting diodes arranged in a matrix. Further, the peripheral exposure light source may directly illuminate the light emitted from the light-emitting diode to a specific position around the exposure target.

並且,亦可進而包含:冷卻水產生裝置,其係供給將發光二極體冷卻之冷卻水;水溫檢測裝置,其係檢測發光二極體剛冷卻後之冷卻水溫度;及水溫控制裝置,其係以將發光二極體剛冷卻後之冷卻水溫度保持於特定溫度之方式,控制冷卻水產生裝置。Furthermore, the method further includes: a cooling water generating device that supplies cooling water for cooling the light emitting diode; a water temperature detecting device that detects a temperature of the cooling water immediately after cooling of the light emitting diode; and a water temperature control device The cooling water generating device is controlled such that the temperature of the cooling water immediately after cooling of the light-emitting diode is maintained at a specific temperature.

並且,進而包含:通電控制裝置,其係應答於被指示將曝光對象物之周邊特定位置曝光,而於發光二極體通電,應答於被指示不將曝光對象物之周邊特定位置曝光,而阻止對發光二極體通電。Furthermore, the present invention further includes an energization control device that is configured to expose a specific position around the exposure target, and to energize the light-emitting diode, and to prevent exposure of a specific position around the exposure target in response to being instructed to be exposed. The light-emitting diode is energized.

若為本發明之周邊曝光裝置,由於對應於曝光對象物之周邊特定位置,配置包含放射紫外線之發光二極體之周邊曝光用光源而成,因此可實現小型化、簡單化,並且大幅降低對曝光對象物所造成之不良影響,而且不伴隨浪費之耗電而可將曝光對象物之周邊區域曝光。According to the peripheral exposure apparatus of the present invention, since the peripheral exposure light source including the light-emitting diode that emits ultraviolet rays is disposed corresponding to a specific position around the exposure target object, it is possible to achieve downsizing and simplification, and to greatly reduce the The peripheral object of the object to be exposed can be exposed without being adversely affected by the exposure of the object.

於周邊曝光用光源包含以保持特定相對關係之狀態排列之複數發光二極體之情況,可不使用特別機構而實現光強度之平準化。於周邊曝光用光源包含排列成矩陣狀之複數發光二極體之情況,增長在曝光對象物照射光之時間,可增加賦予曝光對象物之光能量。於周邊曝光用光源將自發光二極體放射之光,直接照射於曝光對象物之周邊特定位置之情況,可實現小型化、簡單化。In the case where the peripheral light source includes a plurality of light-emitting diodes arranged in a state in which a specific relative relationship is maintained, the leveling of the light intensity can be achieved without using a special mechanism. In the case where the peripheral light source includes a plurality of light-emitting diodes arranged in a matrix, the light energy applied to the object to be exposed can be increased while the exposure target is irradiated with light. In the peripheral exposure light source, the light emitted from the light-emitting diode is directly irradiated to a specific position around the exposure target, thereby achieving downsizing and simplification.

此外,於進而包含冷卻水產生裝置、水溫檢測裝置及水溫控制裝置之情況,可將發光二極體之溫度大致保持於一定,可使曝光品質安定;其中該冷卻水產生裝置係供給將發光二極體冷卻之冷卻水,該水溫檢測裝置係檢測發光二極體剛冷卻後之冷卻水溫度,而該水溫控制裝置係以將發光二極體剛冷卻後之冷卻水溫度保持於特定溫度之方式,控制冷卻水產生裝置。Further, in the case where the cooling water generating device, the water temperature detecting device, and the water temperature control device are further included, the temperature of the light emitting diode can be kept substantially constant, and the exposure quality can be stabilized; wherein the cooling water generating device is supplied a cooling water cooled by the light-emitting diode, wherein the water temperature detecting device detects the temperature of the cooling water immediately after cooling of the light-emitting diode, and the water temperature control device maintains the temperature of the cooling water immediately after cooling the light-emitting diode The cooling water generating device is controlled in a manner of a specific temperature.

並且,於進而包含通電控制裝置之情況,可阻止不必要之耗電,並且延長發光二極體之使用壽命;其中該通電控制裝置係應答於被指示將曝光對象物之周邊特定位置曝光,而於發光二極體通電,應答於被指示不將曝光對象物之周邊特定位置曝光,而阻止對發光二極體通電。Moreover, in the case of further including the power-on control device, unnecessary power consumption can be prevented, and the life of the light-emitting diode can be prolonged; wherein the power-on control device is in response to being instructed to expose a specific position around the exposure object, and The light-emitting diode is energized, and the light-emitting diode is prevented from being energized in response to being instructed not to expose a specific position around the exposure object.

本發明可發揮實現小型化、簡單化,並且大幅降低對曝光對象物所造成之不良影響,而且不伴隨浪費之耗電而可將曝光對象物之周邊區域曝光之特有效果。The present invention can achieve a special effect of miniaturization and simplification, and greatly reducing the adverse effects on the object to be exposed, and exposing the peripheral region of the object to be exposed without wasted power consumption.

此外,藉由僅於曝光時點燈,可延長發光二極體之使用壽命,使耗電維持於必要之最小限度,提升發光二極體交換等之作業性。In addition, by lighting only during exposure, the service life of the light-emitting diode can be extended, power consumption can be maintained to a minimum necessary, and workability such as light-emitting diode exchange can be improved.

由於可減少發光二極體之發熱量,因此能以小型之冷卻器進行冷卻。Since the amount of heat generated by the light-emitting diode can be reduced, it can be cooled by a small cooler.

由於發光二極體不使用水銀,因此可消除作業人員之健康受害及環境負擔。Since the light-emitting diode does not use mercury, it can eliminate the health hazard and environmental burden of the workers.

由於發光二極體為小型輕量,因此可實現裝置之小型化。Since the light-emitting diode is small and lightweight, the device can be miniaturized.

由於發光二極體之波長分布帶窄,因此可僅以有關於感光(曝光)之波長帶進行照射,可防止浪費之耗電。Since the wavelength distribution band of the light-emitting diode is narrow, it is possible to irradiate only with a wavelength band relating to light exposure (exposure), thereby preventing wasted power consumption.

由於發光二極體之發光效率高,因此可抑制產生熱能量,進而抑制耗電。Since the light-emitting diode has high luminous efficiency, it is possible to suppress generation of thermal energy and further suppress power consumption.

由於發光二極體之輸出光不含紅外線,因此對被處理體不會賦予熱負載。Since the output light of the light-emitting diode does not contain infrared rays, no heat load is applied to the object to be processed.

由於發光二極體之使用壽命長,可延長交換週期,減少交換作業次數。Due to the long service life of the LED, the exchange period can be extended and the number of exchange operations can be reduced.

由於發光二極體之輸出光之波長分布帶窄,可僅照射有關於感光(曝光)之波長帶,可消除對被處理物之光學應力,而且無需遮蔽不必要之波長帶之濾光器,可簡化構成。Since the wavelength distribution of the output light of the light-emitting diode is narrow, only the wavelength band for the photosensitive (exposure) can be irradiated, the optical stress on the object to be processed can be eliminated, and the filter of unnecessary wavelength band is not required to be shielded. The composition can be simplified.

以下,參考附圖詳細說明本發明之周邊曝光裝置之實施型態。Hereinafter, an embodiment of the peripheral exposure apparatus of the present invention will be described in detail with reference to the accompanying drawings.

圖1係概略性地表示本發明之周邊曝光裝置之一實施型態之立體圖。Fig. 1 is a perspective view schematically showing an embodiment of a peripheral exposure apparatus of the present invention.

此周邊曝光裝置係適用於液晶面板之周邊曝光。This peripheral exposure device is suitable for peripheral exposure of a liquid crystal panel.

此周邊曝光裝置具有:XY平台2,其係支撐塗佈有抗蝕劑之基板1;旋轉台3,其係支撐XY平台2;周邊曝光用光源4,其係進行對基板1之周邊曝光;滑塊5,其係保持周邊曝光用光源4;照度計6,其係檢測周邊曝光用光源4之輸出光強度;直流電源7,其係對周邊曝光用光源4供給驅動電流;及溫度控制機構8,其係控制周邊曝光用光源4之溫度。The peripheral exposure device has an XY stage 2 supporting a substrate 1 coated with a resist, a rotating table 3 supporting the XY stage 2, and a peripheral exposure light source 4 for performing exposure to the periphery of the substrate 1; a slider 5 for holding a peripheral light source 4; an illuminometer 6 for detecting an output light intensity of the peripheral exposure light source 4; a DC power source 7 for supplying a driving current to the peripheral exposure light source 4; and a temperature control mechanism 8. It controls the temperature of the peripheral exposure light source 4.

作為基板1,可例示玻璃基板、其他材質製之基板、半導體晶圓、薄膜等。此外,可採用各種形狀者。As the substrate 1 , a glass substrate, a substrate made of another material, a semiconductor wafer, a film, or the like can be exemplified. In addition, various shapes can be employed.

XY平台2係使基板1二次元地移動。旋轉台3係與XY平台2一同使基板1旋轉。The XY stage 2 moves the substrate 1 twice. The turntable 3 rotates the substrate 1 together with the XY stage 2.

周邊曝光用光源4係包含放射紫外線之發光二極體(UV-LED)4a以作為發光源,並且包含托架4b及遮光罩4c(參考圖2)等。遮光罩4c係例如圖2所示,具有矩形之窗孔,使UV-LED4a之基板1之照射區成為矩形狀,可提高曝光區之尺寸精度。圖3係表示於未使用遮光罩之情況,曝光區成為圓形。因此,藉由與圖3進行對比,可知於圖2之情況可提高曝光區之尺寸精度。The peripheral exposure light source 4 includes a light-emitting diode (UV-LED) 4a that emits ultraviolet rays as a light-emitting source, and includes a bracket 4b, a light shield 4c (refer to FIG. 2), and the like. The hood 4c has a rectangular window opening as shown in FIG. 2, and the irradiation area of the substrate 1 of the UV-LED 4a is rectangular, and the dimensional accuracy of the exposure area can be improved. Fig. 3 shows the case where the exposure area is circular when the hood is not used. Therefore, by comparing with FIG. 3, it can be seen that the dimensional accuracy of the exposure region can be improved in the case of FIG.

滑塊5係使周邊曝光用光源4,往正交於XY平台2所造成之基板1往特定方向之移動方向之方向來回移動。The slider 5 moves the peripheral exposure light source 4 back and forth in a direction orthogonal to the moving direction of the substrate 1 caused by the XY stage 2 in a specific direction.

照度計6係於滑塊5所造成之周邊曝光用光源4之移動限度位置,接收周邊曝光用光源4之輸出光,並將強度檢測信號供給至直流電源7。The illuminance meter 6 receives the output light of the peripheral exposure light source 4 at the position of the movement limit of the peripheral exposure light source 4 caused by the slider 5, and supplies the intensity detection signal to the DC power supply 7.

直流電源7係以獲得特定輸出光強度之方式,對周邊曝光用光源4供給驅動電壓或電流。宜控制驅動電壓或電流,以便使UV-LED4a僅於曝光時發光,或因應於需要使曝光條件變化。而且,為了進行此控制,宜於具備輸入功能、記憶功能、比較運算功能、動作指令功能等之控制裝置(電腦、可程式邏輯陣列等),預先登錄驅動電壓或電流來作為種類別之資料。The DC power source 7 supplies a driving voltage or current to the peripheral exposure light source 4 in such a manner as to obtain a specific output light intensity. It is preferable to control the driving voltage or current so that the UV-LED 4a emits light only upon exposure, or changes in exposure conditions as needed. Further, in order to perform such control, it is preferable to have a control device (a computer, a programmable logic array, or the like) having an input function, a memory function, a comparison operation function, an operation command function, and the like, and register a drive voltage or a current as a type of data in advance.

此外,宜藉由照度計6,定期地測定輸出光強度,將輸出光強度測定值供給至控制裝置,使其運算適當之UV-LED4a之照射狀態,於UV-LED4a經時劣化之情況,仍可實現安定之曝光品質。Further, it is preferable that the output light intensity is periodically measured by the illuminometer 6, and the output light intensity measurement value is supplied to the control device to calculate the irradiation state of the appropriate UV-LED 4a, and the UV-LED 4a is deteriorated over time. Achieve stable exposure quality.

溫度控制機構8係具有:冷卻器8a,其係用以產生冷卻水;冷卻水流路8b,其係用以將冷卻水供給至托架4b而將UV-LED4a冷卻,並再度送回冷卻器8a;閥8c、流量計8d、水壓計8e及,其係設置於冷卻水流路8b之特定位置;及水溫感測器8f。而且,水溫感測器8f係設置於很接近托架4b之下游側,將溫度檢測信號供給至冷卻器8a而控制冷卻器8a之動作。The temperature control mechanism 8 has a cooler 8a for generating cooling water, and a cooling water flow path 8b for supplying cooling water to the bracket 4b to cool the UV-LED 4a and return it to the cooler 8a again. The valve 8c, the flow meter 8d, the water pressure gauge 8e, and the like are disposed at a specific position of the cooling water flow path 8b; and the water temperature sensor 8f. Further, the water temperature sensor 8f is disposed on the downstream side of the bracket 4b, and supplies a temperature detection signal to the cooler 8a to control the operation of the cooler 8a.

此外,基板1之搬入、搬出係藉由未圖示之基板移送裝載機械人、梭式搬送移載機構、輥式輸送帶等進行,或藉由作業人員之手動作業來進行。In addition, the loading and unloading of the substrate 1 is performed by a substrate transfer loading robot (not shown), a shuttle transfer mechanism, a roller conveyor, or the like, or by manual operation by an operator.

並且,宜設置未圖示之L字狀定位導軌,或僅接觸L字上之3點之銷型導軌,於供給至XY平台2之基板1之位置偏差之情況,可將基板1按壓於該導軌而定位。Further, it is preferable to provide an L-shaped positioning guide rail (not shown) or a pin-shaped guide rail that contacts only three points on the L-shape, and the substrate 1 can be pressed against the position of the substrate 1 supplied to the XY stage 2. Positioned by the rails.

上述構成之周邊曝光裝置之作用如下。The peripheral exposure device of the above configuration functions as follows.

若搬入塗佈有抗蝕劑之基板1,驅動XY平台2、旋轉台3而進行定位,藉由滑塊5而使其正對應曝光之周邊位置,將周邊曝光裝置4定位,從而結束周邊曝光之準備。When the substrate 1 coated with the resist is carried, the XY stage 2 and the rotating table 3 are driven to be positioned, and the slider 5 is positioned to correspond to the peripheral position of the exposure, and the peripheral exposure device 4 is positioned to end the peripheral exposure. Preparation.

其後,藉由XY平台2使基板1往一方向移動,並且藉由直流電源7使周邊曝光用光源4動作,藉此可沿著基板1之一邊將周邊部不需要之抗蝕劑曝光。Thereafter, the substrate 1 is moved in one direction by the XY stage 2, and the peripheral exposure light source 4 is operated by the DC power source 7, whereby the resist which is unnecessary in the peripheral portion can be exposed along one side of the substrate 1.

其次,藉由使XY平台2、旋轉台3動作,並且使滑塊5動作,可使其正對其他邊應曝光之周邊位置而將周邊曝光用光源4定位,並沿著基板1之該當邊而將周邊部不需要之抗蝕劑曝光。Next, by operating the XY stage 2 and the rotating table 3 and operating the slider 5, the peripheral exposure light source 4 can be positioned adjacent to the peripheral position where the other side should be exposed, and along the side of the substrate 1. The exposed resist is exposed at the periphery.

同樣地,可沿著基板1之所有邊,將周邊部不需要之抗蝕劑曝光。Similarly, the unnecessary resist of the peripheral portion can be exposed along all sides of the substrate 1.

若進行以上處理,可進行矩形基板1之4邊全部之周邊曝光,而可僅將任一邊進行曝光;此外,除了周邊部之曝光以外,亦可對基板內部進行曝光。於其他裝置組入本功能之情況等,亦有所有邊均不曝光之情況。By performing the above processing, all of the four sides of the rectangular substrate 1 can be exposed, and only one side can be exposed; in addition to the exposure of the peripheral portion, the inside of the substrate can be exposed. In the case where other devices are incorporated into this function, there are cases where all sides are not exposed.

亦可預先於想曝光之形狀全面,或於分割該形狀之形狀內配置周邊曝光用光源4,於使平台靜止之狀態下,照射並曝光必要時間。It is also possible to arrange the peripheral exposure light source 4 in a shape that is intended to be exposed in advance or to divide the shape, and to irradiate and expose the necessary time in a state where the stage is stationary.

此外,亦可正當對不需要之抗蝕劑部之曝光中,使XY平台2、旋轉台3及滑塊5動作,於曝光端面配合具有凹凸之形狀而進行周邊曝光。Further, in the exposure of the unnecessary resist portion, the XY stage 2, the rotary table 3, and the slider 5 may be operated, and the exposure end surface may be formed in a shape having irregularities to perform peripheral exposure.

圖4係概略性表示本發明之周邊曝光裝置之其他實施型態之立體圖。Fig. 4 is a perspective view schematically showing another embodiment of the peripheral exposure apparatus of the present invention.

此周邊曝光裝置係適用於半導體晶圓之周邊曝光。This peripheral exposure device is suitable for peripheral exposure of semiconductor wafers.

此周邊曝光裝置與圖1之周邊曝光裝置之相異點僅為:省略XY平台2之點;取代L字狀定位導軌或L字上僅3點接觸之銷型導軌而設置端面檢測裝置9之點;及取代矩形而將遮光罩4c之窗孔形狀設定為狹縫狀之點。The peripheral exposure device differs from the peripheral exposure device of FIG. 1 only in that: the point of the XY stage 2 is omitted; instead of the L-shaped positioning guide or the pin-shaped guide rail with only 3 points of contact on the L-shape, the end surface detecting device 9 is provided. Point; and the shape of the window of the hood 4c is set to a slit shape instead of the rectangle.

因此,若為此實施型態,藉由一面使圓形基板1旋轉,一面照射來自周邊曝光用光源4之光,可達成周邊曝光。Therefore, in this embodiment, by irradiating the circular substrate 1 while rotating the light from the peripheral exposure light source 4, peripheral exposure can be achieved.

於上述各實施型態中,藉由使周邊曝光用光源4靜止並移動基板1,而達成周邊曝光,但藉由使基板1靜止而移動周邊曝光用光源4,亦可達成周邊曝光。In the above embodiments, the peripheral exposure is achieved by causing the peripheral exposure light source 4 to be stationary and moving the substrate 1. However, by moving the peripheral exposure light source 4 while the substrate 1 is stationary, peripheral exposure can be achieved.

此外,亦可採用複數周邊曝光用光源4。Further, a plurality of peripheral light sources 4 may be employed.

於上述各實施型態中,將支撐基板1之面設為平坦面,但可採用突設複數支撐用銷而支撐基板1之構成,此外,基板1為方形之情況,亦可拿持基板1之一側部,以水平狀態或垂直狀態保持基板1。In each of the above embodiments, the surface of the support substrate 1 is a flat surface. However, the substrate 1 may be supported by protruding a plurality of support pins. Further, when the substrate 1 is square, the substrate 1 may be held. One of the sides holds the substrate 1 in a horizontal state or a vertical state.

並且,於上述各實施型態中,可控制直流電源7而使UV-LED4a開啟(ON)/關閉(OFF),於此情況,可根據開啟時間及關閉時間,如圖5所示斷續地達成曝光。Further, in each of the above embodiments, the DC power source 7 can be controlled to turn the UV-LED 4a ON/OFF. In this case, the ON time and the OFF time can be intermittently shown in FIG. Achieve exposure.

於上述各實施型態中,將3個UV-LED4a排列成直線狀,但亦可排列不同數目之UV-LED4a。此外,亦可將UV-LED4a排列為複數列、複數行(參考圖6、圖7)。圖6所示之周邊曝光用光源4係將UV-LED4a排列為棋盤格狀,圖7所示之周邊曝光用光源4係將UV-LED4a排列成交叉格子狀。In each of the above embodiments, the three UV-LEDs 4a are arranged in a straight line, but a different number of UV-LEDs 4a may be arranged. Further, the UV-LEDs 4a may be arranged in a plurality of columns and a plurality of rows (refer to FIGS. 6 and 7). The peripheral exposure light source 4 shown in Fig. 6 arranges the UV-LEDs 4a in a checkerboard pattern, and the peripheral exposure light source 4 shown in Fig. 7 arranges the UV-LEDs 4a in a crossed lattice shape.

於此等情況中,可增長光照射於基板1之時間,增加賦予基板1之光能量(參考圖8,其中圖8表示將UV-LED4a排列成3列2行之棋盤格狀之情況之照度分布)。In such a case, the time at which the light is irradiated onto the substrate 1 can be increased, and the light energy imparted to the substrate 1 is increased (refer to FIG. 8, wherein FIG. 8 shows the illuminance in the case where the UV-LEDs 4a are arranged in a checkerboard pattern of three columns and two rows. distributed).

此外,藉由適當設定相鄰之UV-LED4a彼此之間隔,能擴大可曝光面積。Further, the exposure area can be enlarged by appropriately setting the interval between adjacent UV-LEDs 4a.

進一步說明此點。Further explain this point.

使塗佈於基板1上之抗蝕劑完全感光,以實現周邊曝光時,抗蝕劑感度(mJ/cm2 )、UV-LED之照度(mW/cm2 )、曝光速度(mm/sec)及照射區寬度(mm)之4個參數係有關。The resist applied on the substrate 1 is completely sensitized to achieve resist sensitivity (mJ/cm 2 ), UV-LED illuminance (mW/cm 2 ), and exposure speed (mm/sec) when peripheral exposure is achieved. The four parameters of the width of the irradiation zone (mm) are related.

於此,抗蝕劑感度(mJ/cm2 )係表示,對塗佈於基板1之抗蝕劑賦予多少程度之光能量會感光之值。Here, the resist sensitivity (mJ/cm 2 ) is a value indicating how much light energy is applied to the resist applied to the substrate 1 .

UV-LED之照度(mW/cm2 )係自UV-LED照射之光(抗蝕劑會感光之波長帶之光)在基板表面之每單位面積之光能量之量。The illuminance of the UV-LED (mW/cm 2 ) is the amount of light energy per unit area on the surface of the substrate from the light irradiated by the UV-LED (the light of the wavelength band in which the resist is photosensitive).

曝光速度(mm/sec)係UV-LED通過基板上之速度。The exposure speed (mm/sec) is the speed at which the UV-LED passes through the substrate.

照射區寬度(mm)係照射光所照射之基板上之區域之寬度(通過方向之尺寸)。The width (mm) of the irradiation zone is the width (the size of the passing direction) of the region on the substrate irradiated by the irradiation light.

而且,為了將基板1之周邊部正確地曝光而達成周邊曝光,必須符合以下條件。Further, in order to accurately expose the peripheral portion of the substrate 1 to achieve peripheral exposure, the following conditions must be met.

照射區寬度(mm)/{抗蝕劑感度(mJ/cm2 )/UV-LED之照度(mW/cm2 )}≧曝光速度(mm/sec)。Irradiation zone width (mm) / {resist sensitivity (mJ / cm 2 ) / UV-LED illuminance (mW / cm 2 )} ≧ exposure speed (mm / sec).

然而,通常從使用條件會先決定「UV-LED之照度」以外之參數。因此,以符合上述條件式之方式決定UV-LED之照度即可。如圖9所示,自UV-LED放射之光係成為中心照度最高之正規分布狀。此外,於圖9及以下之圖中,數字1~5表示照度,抗蝕劑正確地感光之照度則設定為3以上。However, it is usually determined from the conditions of use that the parameters other than the "illuminance of the UV-LED" are determined first. Therefore, the illuminance of the UV-LED can be determined in a manner consistent with the above conditional expression. As shown in Fig. 9, the light system radiated from the UV-LED has a normal distribution with the highest central illumination. Further, in Fig. 9 and the following figures, numerals 1 to 5 indicate illuminance, and the illuminance of the resist which is correctly photosensitive is set to 3 or more.

因此,於各個UV-LED之照射未有重疊之情況,如圖9所示,所有UV-LED之照度分布均完全不變。Therefore, in the case where the irradiation of the respective UV-LEDs does not overlap, as shown in FIG. 9, the illuminance distribution of all the UV-LEDs is completely unchanged.

若以照度1之部分重疊之方式,設定UV-LED彼此之相對位置,兩UV-LED間之最低照度成為2(參考圖10)。但以此照度2,無法使抗蝕劑正確地感光。If the relative positions of the UV-LEDs are set in such a manner that the illuminances 1 overlap, the minimum illuminance between the two UV-LEDs becomes 2 (refer to FIG. 10). However, with this illuminance 2, the resist cannot be properly sensitized.

若以照度1之部分及照度2之部分重疊之方式,設定UV-LED彼此之相對位置,兩UV-LED間之最低照度成為3(參考圖11)。因此,於兩UV-LED間之全範圍可使抗蝕劑正確地感光。亦即,與圖9比較可達成照度之大幅平準化。If the relative positions of the UV-LEDs are set such that the illuminance 1 and the illuminance 2 overlap, the minimum illuminance between the two UV-LEDs is 3 (refer to FIG. 11). Therefore, the resist is correctly sensitized over the entire range between the two UV-LEDs. That is, a large level of illuminance can be achieved as compared with FIG.

1...基板1. . . Substrate

2...XY平台2. . . XY platform

3...旋轉台3. . . Rotary table

4...周邊曝光用光源4. . . Peripheral exposure light source

4a...發光二極體(UV-LED)4a. . . Light-emitting diode (UV-LED)

4b...托架4b. . . bracket

4c...遮光罩4c. . . Hood

5...滑塊5. . . Slider

6...照度計6. . . Illuminometer

7...直流電源7. . . DC power supply

8...溫度控制機構8. . . Temperature control mechanism

8a...冷卻器8a. . . Cooler

8b...冷卻水流路8b. . . Cooling water flow path

8c...閥8c. . . valve

8d...流量計8d. . . Flow meter

8e...水壓計8e. . . Water pressure gauge

8f...水溫感測器8f. . . Water temperature sensor

圖1係概略地表示本發明之周邊曝光裝置之一實施型態之立體圖。Fig. 1 is a perspective view schematically showing an embodiment of a peripheral exposure apparatus of the present invention.

圖2係表示遮光罩與照射區之關係之概略立體圖。Fig. 2 is a schematic perspective view showing the relationship between the hood and the irradiation zone.

圖3係表示遮光罩不存在之情況之照射區之概略立體圖。Fig. 3 is a schematic perspective view showing an irradiation area in a case where the hood is not present.

圖4係概略地表示本發明之周邊曝光裝置之其他實施型態之立體圖。Fig. 4 is a perspective view schematically showing another embodiment of the peripheral exposure apparatus of the present invention.

圖5係概略地表示斷續曝光之一例之立體圖。Fig. 5 is a perspective view schematically showing an example of intermittent exposure.

圖6係表示將UV-LED排列為4列4行之棋盤格狀之周邊曝光用光源之概略圖。Fig. 6 is a schematic view showing a light source for peripheral exposure in which a UV-LED is arranged in a checkerboard pattern of four columns and four rows.

圖7係表示將UV-LED排列為交叉格子狀之周邊曝光用光源之概略圖。Fig. 7 is a schematic view showing a light source for peripheral exposure in which UV-LEDs are arranged in a crossed lattice shape.

圖8係表示將UV-LED排列為3列2行之棋盤格狀之周邊曝光用光源之照度分布之概略圖。Fig. 8 is a schematic view showing an illuminance distribution of a peripheral exposure light source in which a UV-LED is arranged in a checkerboard pattern of three columns and two rows.

圖9係表示2個UV-LED所形成之照度分布之概略圖。Fig. 9 is a schematic view showing an illuminance distribution formed by two UV-LEDs.

圖10係表示重疊2個UV-LED之照射範圍之最外緣部之狀態之照度分布之概略圖。Fig. 10 is a schematic view showing an illuminance distribution in a state in which the outermost edge portion of the irradiation range of two UV-LEDs is superimposed.

圖11係表示以2個UV-LED間之照度成為可感光之照度之方式,設定兩UV-LED之間隔之狀態之照度分度之概略圖。Fig. 11 is a schematic view showing an illuminance index in a state in which the interval between the two UV-LEDs is set such that the illuminance between the two UV-LEDs becomes sensible.

1...基板1. . . Substrate

2...XY平台2. . . XY platform

3...旋轉台3. . . Rotary table

4...周邊曝光用光源4. . . Peripheral exposure light source

4a...發光二極體(UV-LED)4a. . . Light-emitting diode (UV-LED)

4b...托架4b. . . bracket

5...滑塊5. . . Slider

6...照度計6. . . Illuminometer

7...直流電源7. . . DC power supply

8...溫度控制機構8. . . Temperature control mechanism

8a...冷卻器8a. . . Cooler

8b...冷卻水流路8b. . . Cooling water flow path

8c...閥8c. . . valve

8d...流量計8d. . . Flow meter

8e...水壓計8e. . . Water pressure gauge

8f...水溫感測器8f. . . Water temperature sensor

Claims (5)

一種周邊曝光裝置,其特徵在於:於曝光對象物(1)之周邊特定位置,將周邊曝光用光源(4)經由規定照射區之遮光罩(4c)對應地配置;其中前述周邊曝光用光源(4)係包含複數之發光二極體(4a),該等發光二極體係在朝前述曝光對象物表面之照射區中低照度部份彼此有重疊而保持滿足抗蝕劑正確地感光之照度以上之特定相對關係之狀態下,排列於托架(4b)之一面上。 A peripheral exposure apparatus characterized in that a peripheral exposure light source (4) is correspondingly disposed via a hood (4c) of a predetermined irradiation area at a specific position around the exposure target (1); wherein the peripheral exposure light source ( 4) comprising a plurality of light-emitting diodes (4a) which overlap with each other in a low-illuminance portion in an irradiation region toward the surface of the object to be exposed to maintain an illuminance which satisfies the correct sensitivity of the resist In a state of a specific relative relationship, it is arranged on one side of the bracket (4b). 如請求項1之周邊曝光裝置,其中周邊曝光用光源(4)係包含:排列成矩陣狀之複數發光二極體(4a)。 The peripheral exposure device of claim 1, wherein the peripheral exposure light source (4) comprises: a plurality of light-emitting diodes (4a) arranged in a matrix. 如請求項1或2之周邊曝光裝置,其中進而包含:冷卻水產生裝置(8a),其係供給將發光二極體(4a)冷卻之冷卻水;水溫檢測裝置(8f),其係檢測發光二極體剛冷卻後之冷卻水溫度;及水溫控制裝置,其係以將發光二極體剛冷卻後之冷卻水溫度保持於特定溫度之方式,控制冷卻水產生裝置(8a)。 The peripheral exposure apparatus of claim 1 or 2, further comprising: a cooling water generating device (8a) for supplying cooling water for cooling the light emitting diode (4a); and a water temperature detecting device (8f) for detecting The temperature of the cooling water immediately after cooling of the light-emitting diode; and the water temperature control device control the cooling water generating device (8a) such that the temperature of the cooling water immediately after cooling of the light-emitting diode is maintained at a specific temperature. 如請求項1或2之周邊曝光裝置,其中周邊曝光用光源(4)係將從發光二極體(4a)放射之光經由前述遮光罩(4c)之矩形之窗孔直接照射於曝光對象物之周邊特定位置。 The peripheral exposure device according to claim 1 or 2, wherein the peripheral exposure light source (4) directly illuminates the light emitted from the light-emitting diode (4a) through the rectangular aperture of the hood (4c) to the exposure object Specific location around. 如請求項1或2之周邊曝光裝置,其中進而包含:通電控制裝置,其係應答於被指示將曝光對象物(1)之周邊特定位置曝光,而於發光二極體(4a)通電,應答於被指示不將曝光對象物(1)之周邊特定位置曝光,而阻止對發光二極體(4a)通電。A peripheral exposure apparatus according to claim 1 or 2, further comprising: an energization control means responsive to being instructed to expose a specific position around the exposure target (1), and energizing the light-emitting diode (4a) to respond It is instructed not to expose a specific position around the exposure target (1), and to prevent energization of the light-emitting diode (4a).
TW095108061A 2005-03-28 2006-03-10 Peripheral exposure device TWI394014B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005090736A JP4495019B2 (en) 2005-03-28 2005-03-28 Peripheral exposure equipment

Publications (2)

Publication Number Publication Date
TW200643652A TW200643652A (en) 2006-12-16
TWI394014B true TWI394014B (en) 2013-04-21

Family

ID=37030280

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108061A TWI394014B (en) 2005-03-28 2006-03-10 Peripheral exposure device

Country Status (4)

Country Link
JP (1) JP4495019B2 (en)
KR (1) KR101217290B1 (en)
CN (1) CN1841204B (en)
TW (1) TWI394014B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4491445B2 (en) * 2005-11-04 2010-06-30 株式会社オーク製作所 Peripheral exposure apparatus and method
JP2008129558A (en) * 2006-11-27 2008-06-05 Keio Gijuku Curved surface manufacturing method using light source array as exposure light source
JP4937808B2 (en) * 2007-03-26 2012-05-23 フェニックス電機株式会社 Light source device and exposure apparatus using the same
KR101037466B1 (en) * 2008-11-21 2011-05-26 삼성전기주식회사 Simplified exposure apparatus
WO2010096896A1 (en) * 2009-02-24 2010-09-02 Exfo Photonic Solutions Inc. System, method and portable controller for programming and calibration of a plurality of light source units for photo-reactive/curing applications
JP5485570B2 (en) * 2009-03-23 2014-05-07 リンテック株式会社 Light irradiation apparatus and light irradiation method
JP2013122470A (en) * 2010-03-31 2013-06-20 Toray Eng Co Ltd Peripheral exposure device and peripheral exposure method
JP5470236B2 (en) * 2010-12-22 2014-04-16 東京エレクトロン株式会社 Local exposure method and local exposure apparatus
US20120194622A1 (en) * 2011-01-31 2012-08-02 Camtek Ltd. Ultra violet light emitting diode curing of uv reactive ink
JP5325907B2 (en) * 2011-02-22 2013-10-23 東京エレクトロン株式会社 Local exposure equipment
JP5451798B2 (en) * 2011-03-15 2014-03-26 東京エレクトロン株式会社 Local exposure method and local exposure apparatus
CN103615704B (en) * 2013-12-17 2015-06-03 四川聚能核技术工程有限公司 Matrix type LED light source of exposure machine
CN107544165A (en) * 2017-09-25 2018-01-05 京东方科技集团股份有限公司 A kind of vacuum aligns abutted equipment and its to cassette method
CN108628110B (en) * 2018-05-07 2020-08-21 北京弘浩千瑞科技有限公司 Direct-writing silk screen edge sealing plate making machine and edge sealing method
JP7178240B2 (en) * 2018-11-14 2022-11-25 東京エレクトロン株式会社 Light irradiation device
CN114935853B (en) * 2022-06-30 2023-12-29 苏州华星光电技术有限公司 Backlight module, preparation method thereof and display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154639A (en) * 1997-11-20 1999-06-08 Orc Mfg Co Ltd Peripheral aligner and method therefor
JP2004274011A (en) * 2003-01-16 2004-09-30 Nikon Corp Illumination light source device, illuminating device, exposure device and exposure method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05190448A (en) * 1992-01-16 1993-07-30 Nikon Corp Wafer edge exposer
JP2000299272A (en) * 1999-04-14 2000-10-24 Nikon Corp Peripheral aligner and exposing method
CN2574075Y (en) * 2002-10-14 2003-09-17 志圣科技(广州)有限公司 Cooling device for exposure apparatus
JP2004342633A (en) * 2003-05-13 2004-12-02 Nikon Corp Aligner, lighting device, and aligning method
JP2005303033A (en) * 2004-04-13 2005-10-27 Y E Data Inc Light source of exposure device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154639A (en) * 1997-11-20 1999-06-08 Orc Mfg Co Ltd Peripheral aligner and method therefor
JP2004274011A (en) * 2003-01-16 2004-09-30 Nikon Corp Illumination light source device, illuminating device, exposure device and exposure method

Also Published As

Publication number Publication date
JP4495019B2 (en) 2010-06-30
KR20060104925A (en) 2006-10-09
CN1841204B (en) 2011-12-28
CN1841204A (en) 2006-10-04
TW200643652A (en) 2006-12-16
JP2006278389A (en) 2006-10-12
KR101217290B1 (en) 2012-12-31

Similar Documents

Publication Publication Date Title
TWI394014B (en) Peripheral exposure device
TWI603163B (en) Exposure apparatus, method of forming resist pattern, and storage medium
TWI421647B (en) Exposure device, exposure beam irradiation method and production method of a panel substrate for display
TWI491999B (en) Local site exposure apparatus and local site exposure method and strage medium
TW201837980A (en) Optical processing apparatus, coating/development apparatus, optical processing method, and storage medium
JP5035272B2 (en) Light irradiation device
JP2009147346A (en) Exposure apparatus, exposure method and device manufacturing method
TWI820009B (en) Optical processing equipment and substrate processing equipment
KR100508284B1 (en) Peripheral exposure apparatus
TWI706226B (en) Exposure device, substrate processing apparatus, exposure method of substrate and substrate processing method
JP2003173029A (en) Exposure device and exposure method
JP6985803B2 (en) Exposure equipment, substrate processing equipment, substrate exposure method and substrate processing method
TWI414903B (en) Proximity exposure device, its exposure beam forming method and manufacturing method of a display panel substrate
TW201937544A (en) Substrate processing device, substrate processing method, and storage medium
JP6768561B2 (en) Exposure equipment, substrate processing equipment, substrate exposure method and substrate processing method
JP3340720B2 (en) Peripheral exposure equipment
JP7008466B2 (en) UV irradiation device and UV irradiation method
JP6809188B2 (en) Light irradiation device
KR101058718B1 (en) Exposure equipment
JP2011095718A (en) Proximity exposure apparatus and proximity exposure method of the same
JP2012173512A (en) Proximity exposure apparatus and proximity exposure method therefor
WO2011125420A1 (en) Periphery exposure apparatus and periphery exposure method
JP2011237596A (en) Exposure apparatus, exposure method, and manufacturing method of display panel substrate
JP2011054608A (en) Proximity scan aligner and method of controlling the same
TW202343147A (en) Auxiliary exposure device, exposure method, and memory medium