TWI386105B - Display panel - Google Patents

Description

Display panel Field of invention

The invention relates to display panels and in particular to panels for use in organic light emitting diode displays.

Background of the invention

Generally, an organic light emitting diode (OLED) display is a self-luminous display device that displays an image by exciting an illuminable organic material to emit light. The light-emitting element of the organic light-emitting diode display includes an anode (hole injection electrode), a cathode (electron injection electrode), and an organic light-emitting layer inserted therein. When holes and electrons are injected into the luminescent layer, they combine and illuminate when transferred from the excited state to the ground state. The organic light emitting layer may further include one or more electron transport layer (ETL) and hole transport layer (HTL), and an electron injection layer (EIL) and a hole injection layer (HIL) to enhance light emission.

The organic light emitting diode display comprises a plurality of pixels, and each pixel comprises an anode, a cathode and a light emitting layer. The pixels can be arranged in an array and can be driven in the form of a passive array (or a single array) or an active array.

The passive array organic light emitting diode display comprises a plurality of anode lines, a plurality of cathode lines crossing the anode lines, and a plurality of pixels, each of the pixels comprising a light emitting layer. Selecting an anode line and a cathode line causes the pixels at the intersection of the selected signal lines to illuminate.

The active array organic light emitting diode display comprises a plurality of pixels, and each pixel can include a switching transistor, a driving transistor and a storage capacitor, and an anode, a cathode and a light emitting layer. The active array type organic light emitting diode display further includes a plurality of gate lines for transmitting gate signals and a plurality of data lines for transmitting data voltages. The switching transistor is coupled to a gate line and a data line, and the data line corresponds to the gate signal transmission data voltage from the gate line. The driving transistor receives the data voltage from the switching transistor and drives the amount of current required to meet the data voltage. Current from the driving transistor enters the luminescent layer to cause light emission having an intensity depending on the magnitude of the current. The storage capacitor is connected between the data voltage and the supply voltage to maintain the voltage difference. The gray scale of the active array type organic light emitting diode display is achieved by controlling the data voltage to adjust the current driven by the driving transistor. The organic light emitting diode display represents a color by supplying red, green and blue light emitting layers.

In addition, the organic light emitting diode display can be classified into an upper light emitting type and a lower light emitting type display according to the light emitting direction. The upper luminescent organic light emitting diode display comprises a transparent cathode typically made of indium tin oxide (ITO) or indium zinc oxide (IZO), and an opaque anode. Conversely, the lower-emitting organic light-emitting diode display includes an opaque cathode and a transparent anode. The position of the anode and cathode can be varied as needed.

The cathode is supplied at a general voltage via another conductor, and the contact resistance between the cathode and the conductor is high.

Summary of invention

The present invention provides an organic light emitting diode device that reduces the contact resistance between a general electrode and a general voltage line.

Other features of the invention are set forth in this description and will be apparent from the description, or by the practical application of the invention.

The present invention discloses an organic light emitting display panel comprising a plurality of anode electrodes and a cathode electrode supplied at a predetermined voltage, and comprising a first portion facing the anode electrode, receiving a predetermined voltage and having a second portion different from the cross section of the first portion . A plurality of light emitting components are disposed between the anode electrode and the cathode electrode, and a wire transmits a predetermined voltage and contacts the second portion of the cathode electrode.

The invention also discloses a plurality of anode electrodes, a plurality of light-emitting components respectively disposed on the anode electrodes, a metal layer including a first portion disposed on the light-emitting assembly and a second portion separated from the light-emitting assembly, and a connecting metal layer An organic light emitting display panel of one of the wires of the second portion. The wire is disposed under the layer where the light emitting component is located.

The above description and the following detailed description are intended to be illustrative and illustrative,

Simple illustration

The accompanying drawings, which are incorporated in and in the claims

1 is a block diagram of an organic light emitting diode display in accordance with an embodiment of the present invention.

2 is an equivalent circuit diagram of a pixel in an organic light emitting diode display according to an embodiment of the invention.

3 is a plan view showing the structure of a display panel of an organic light emitting diode display according to an embodiment of the present invention.

Figure 4 is a cross-sectional view taken along line IV-IV' of the display panel of Figure 3.

Figure 5 is a layout diagram of the pixels and signal lines on the display panel in Figure 3.

Fig. 6 and Fig. 7 are cross-sectional views of the line segments VI-VI' and VII-VII' taken along the pixel and signal lines in Fig. 5, respectively.

Figure 8 is a structural view of an organic light-emitting element according to an embodiment of the present invention.

Fig. 9, Fig. 11, Fig. 13, Fig. 15, Fig. 17, Fig. 19, Fig. 21, Fig. 23 and Fig. 25 are diagrams 3, 4, and 4 according to an embodiment of the present invention. The layout of the display panel shown in Figure 5, Figure 6, and Figure 7 in the middle of the process.

10A and 10B are cross-sectional views of the line segments XA-XA' and XB-XB' of the display panel of FIG. 9, respectively, and FIG. 10C is the line segment IV-IV' of the display panel of FIG. 3 A cross-sectional view of the steps.

12A and 12B are cross-sectional views of the line segments XIIA-XIIA' and XIIB-XIIB' of the display panel of Fig. 11, respectively, and Fig. 12C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

14A and 14B are cross-sectional views of the line segments XIVA-XIVA' and XIVB-XIVB' of the display panel of Fig. 13, respectively, and Fig. 14C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

16A and 16B are cross-sectional views of the line segments XVIA-XVIA' and XVIB-XVIB' of the display panel of Fig. 15, respectively, and Fig. 16C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

18A and 18B are cross-sectional views of the line segments XVIIIA-XVIIIA' and XVIIIB-XVIIIB' of the display panel of Fig. 17, respectively, and Fig. 18C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

20A and 20B are cross-sectional views of the line segments XXA-XXA' and XXB-XXB' of the display panel of Fig. 19, respectively, and Fig. 20C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

22A and 22B are cross-sectional views of the line segments XXIIA-XXIIA' and XXIIB-XXIIB' of the display panel of Fig. 21, respectively, and Fig. 22C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

Figure 24A and Figure 24B are cross-sectional views of the line segments XXIVA-XXIVA' and XXIVB-XXIVB' of the display panel of Figure 23, respectively, and Figure 24C is the line segment IV-IV' of the display panel of Figure 3 A cross-sectional view of the steps.

Figure 26A and Figure 26B are cross-sectional views of the line segments XXVIA-XXVIA' and XXVIB-XXVIB' of the display panel of Figure 25, respectively, and Figure 26C is the line segment IV-IV' of the display panel of Figure 3 A cross-sectional view of the steps.

Figure 27A and Figure 27B are cross-sectional views of the line segments XXVIA-XXVIA' and XXVIB-XXVIB' along the display panel of Figure 25, respectively, and illustrate the steps below the steps shown in Figures 26A and 26B, and Figure 27C is a cross-sectional view of the display panel of Figure 3 taken along line IV-IV' at this step.

Detailed description of the preferred embodiment

The invention will be fully described with reference to the accompanying drawings, in which However, the invention will be embodied in various forms and should not be construed as being limited to the embodiments herein.

In the drawings, the thickness of layers, films, panels, regions, and the like are exaggerated for clarity. The same numbers are fully referenced to the same elements. It can be understood that when a component such as a layer, film, region or base system is referred to as "another requirement", it can be directly indicated as "other elements" or "interference requirements". In contrast, when a requirement is referred to as “directly on another requirement”, no “interference requirement” is used to indicate.

Now, in accordance with an embodiment of the present invention, a display panel for an organic light emitting diode display and a process thereof will be described with reference to the accompanying drawings.

1 is a block diagram of an organic light emitting diode display according to an embodiment of the invention, and FIG. 2 is an equivalent circuit diagram of a pixel in an organic light emitting diode display according to an embodiment of the invention.

Referring to FIG. 1, an organic light emitting diode display according to an embodiment of the present invention includes a display panel 300 and two drivers including a scan driver 400 and a data driver 500 coupled to the display panel 300.

The display panel 300 includes a plurality of signal lines, and the plurality of pixels PX are connected to the signal lines and substantially arranged in the array.

The signal line includes a plurality of scanning lines G ₁ -G _{n for} transmitting scanning signals and a plurality of data lines sD ₁ -D _{m for} transmitting data signals. Scan lines G ₁ -G _n in essence "column" direction and extend mutually parallel two by two, while the data lines D ₁ -D _m in essence "row" direction extending parallel two by two to each other.

Referring to FIG. 2, for example, each pixel PX is coupled to a scan line G _i and a data line D _j and includes an organic light emitting element LD, a driving transistor Qd, a capacitor Cst, and a switching transistor Qs.

The driving transistor Qd has a control end point connected to the switching transistor Qs, an input end point connected to the driving voltage Vp, and an output end point connected to the light emitting element LD.

The light-emitting element LD has an anode connected to the output end of the driving transistor Qd and a cathode connected to the general voltage Vcom. The general voltage Vcom can be less than the driving voltage Vp and is the bottom voltage. The light-emitting element LD emits light having intensity according to the output current of the driving transistor Qd, and the output current of the driving transistor Qd depends on the voltage between the control end point and the input end point in the driving transistor Qd.

The switching transistor Qs has a control end point connected to the scanning line G _i , an input end point connected to the data line Dj and an output end point connected to the control end point of the driving transistor Qd. The switching transistor Qs transmits a data signal from the data line Dj to the driving transistor Qd corresponding to the scanning signal from the scanning line G _i .

As shown in Fig. 2, the switching transistor Qs is an N-channel field effect transistor (FET), and the driving transistor Qd is a P-channel field effect transistor. However, the types may be interchanged or both N-channel field effect transistors or both P-channel field effect transistors. In this illustration, the connection between the transistors Qs and Qd and the light-emitting element LD can be improved.

The transistors Qs and Qd contain polycrystalline germanium or amorphous germanium.

The capacitor Cst is connected to the control end point and the input end point of the driving transistor Qd. Capacitor Cst is charged and maintains the voltage corresponding to the data signal provided by the drive transistor Qd control terminal.

Referring again to FIG.1, the scan driver 400 system coupled to the scan line display panel 300 of G ₁ -G _n and forming a gate on voltage Von to turn on the switching transistor Qs and the gate-off voltage Voff to turn off the switching transistor sQs thereby generating The signal is scanned to provide to the scan lines sG ₁ -G _n .

The data driver 500 is coupled to the data lines D ₁ -D _{m of the} display panel 300 and provides data signals to the data lines D ₁ -D _m .

The scan driver 400 and the data driver 500 can be used as integrated circuit wafers embedded on the flexible printed circuit (FPC) film of the display panel 300 embedded in the display panel 300 or in a tape and reel package. Alternatively, they can be integrated into the display panel 300.

Now, a display panel for an organic light-emitting diode display according to an embodiment of the present invention has a structure as shown in FIGS. 1 to 2 in detail in FIGS. 3 to 8.

3 is a plan view showing a structure of a display panel for an organic light emitting diode display according to an embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line IV-IV of the display panel of FIG. 3, FIG. Figure 3 is a cross-sectional view of the pixel and signal lines on the display panel in Fig. 3, and Fig. 6 and Fig. 7 are respectively sectional views of the line segments VI-VI' and VII-VII' along the pixel and signal lines in Fig. 5, and Figure 8 is a structural view of an organic light-emitting element according to an embodiment of the present invention.

Referring to FIG. 3, a display panel 300 according to an embodiment of the present invention includes a display area DA (enclosed by a dot-shaped rectangle) and a peripheral area PA disposed outside the display area DA. The display area DA contains a plurality of pixels PX.

The general electrode 270, which is the cathode of the organic light-emitting element LD, is also provided by the display panel 300. The general electrode 270 covers the display area DA and includes a contact portion B disposed in the peripheral area PA to receive a general voltage Vcom. Contact portion B of electrode 270 is typically coupled to a common voltage line 278 that includes a general voltage contact pad 279 to receive a general voltage Vcom from an external device.

Comprising scanning lines G ₁ -G _n and data lines D ₁ -D _n number of the signal line is also provided by the display panel 300. The signal line includes a portion disposed in the display area DA and disposed in the peripheral area to receive an end portion of the signal including the scan signal and the data signal.

The scan driver 400 and the data driver 500 can be disposed outside the display panel 300, disposed on the peripheral area PA, or integrated in the peripheral area PA of the display panel 300 along the pixels and signal lines.

Next, referring to Figs. 3, 4, 5, 6, and 7, the detailed display panel layer structure will be described.

A barrier layer 111 composed of tantalum oxide or tantalum nitride is formed on one of the insulating substrates 110 formed of transparent glass. The barrier layer 111 may have a two-layer structure.

A plurality of semiconductor islands 151a and 151b formed of polycrystalline germanium or amorphous germanium are formed on the barrier film 111. Each of the semiconductor islands 151a and 151b may include a plurality of non-essential regions having N-type or P-type conductive impurities and at least one essential region containing almost no conductive impurities.

Regarding the semiconductor island 151a for switching the thin film transistor (TFT) Qs, the non-essential region includes a first source region 153a, an intermediate region 1535 and an already doped N-type impurity and one of the two separated first The drain region 155a, and the essential region includes a pair of (first) channel regions 154a1 and 154a2 disposed between the non-essential regions 153a, 1535 and 155a.

As for the semiconductor island 151b used as the driving thin film transistor Qd, the non-essential region includes a second source region 153b and a doped P-type impurity and one of the two is separated from the second gate region 155b, and the essential region includes the configuration. A channel region 154b between the second source region 153b and the second drain region 155b. The second source region 153b extends to form the storage electrode region 157.

The non-essential region may further include a plurality of doped regions (not shown) and source and drain regions 153a, 155a, 153b, and 155b disposed between the channel regions 154a1, 154a2, and 154b. The microdoped region can be replaced by a branch region that is free of impurities.

In addition, according to the driving conditions, the non-essential regions 153a and 155a of the first semiconductor island 151a may be doped with P-type impurities, and the non-essential regions 153b and 155b of the second semiconductor island 151b may be doped with N-type impurities. . The conductive impurities include P-type impurities such as boron (B) and gallium (Ga) and N-type impurities such as phosphorus (P) and arsenic (As).

The semiconductor islands 151a and 151b are made of amorphous germanium. There is no impurity region in this illustration, and ohmic contacts may be formed on the semiconductor islands 151a and 151b to enhance the contact property between the semiconductor islands 151a and 151b and the metal layer.

A gate insulating layer 140 composed of hafnium oxide or tantalum nitride is formed on the semiconductor islands 151a and 151b and the barrier film 111.

A plurality of gate conductors including a plurality of gate lines 121 include a plurality of first gate electrodes 124a and second gate electrodes 124b formed on the gate insulating layer 140.

The gate line 121 for transmitting the gate signal substantially extends in the horizontal direction. Each pair of first gate electrodes protrudes upward from the gate line 121 and traverses the first semiconductor island 151a such that it overlaps with the first channel region pair 154a1 and 154a2. Each of the gate lines 121 includes an extended end region having a large area to be coupled to other layers or an external drive circuit. The gate line 121 can be directly connected to the gate drive circuit to generate a gate signal that can be incorporated into the base 110.

The second gate electrode 124b is spaced apart from the gate line 121 and traverses the second semiconductor island 151b such that it overlaps the second channel region 154b. The second gate electrode 124b extends to form a storage electrode 127 overlapping the storage electrode region 157 of the second semiconductor island 151b, thus forming a storage capacitor Cst.

The gate conductors 121 and 124b may be made of a low-impedance material such as aluminum or an aluminum alloy (for example, Al-Nd), silver or a silver alloy, copper or a copper alloy. The gate conductors 121 and 124b may be a multilayer structure including two films having different physical properties. In this illustration, one of the two films can be made of a low-resistance metal such as an aluminum-containing metal, a silver-containing metal, and a copper-containing metal to reduce signal delay or voltage drop in the gate conductors 121 and 124b. The other film may have good physical and chemical properties and materials having excellent electrical contact properties with other materials such as indium tin oxide (ITO) or indium zinc oxide (IZO) such as chromium, molybdenum, molybdenum alloy, tantalum or titanium. Made. An example of the layered structure comprises a lower layer of chromium film and an upper layer of aluminum-bismuth alloy film and a lower layer of aluminum film and an upper layer of molybdenum film.

Further, the side ends of the gate conductors 121 and 124b may be inclined with respect to the surface of the base 110 between 30 and 80 degrees.

A boundary insulating layer 160 is formed on the gate conductors 121 and 124b. The boundary insulating layer 160 is a photosensitive organic material having excellent flat properties, and a low dielectric insulating material such as amorphous germanium formed by plasma assisted chemical vapor deposition (PECVD): C: O and amorphous germanium: O: F or an inorganic material such as tantalum nitride and tantalum oxide.

The boundary insulating layer 160 has a plurality of contact holes 164 that contact the second gate electrode 124b. In addition, the boundary insulating layer 160 and the gate insulating layer 140 have a plurality of contact holes 163a, 163b, 165a, and 165b that are in contact with the source regions 153a and 153b and the drain regions 155a and 155b, respectively.

A plurality of data guiding systems including a plurality of data lines 171, a plurality of driving voltage lines 172, a plurality of first and second drain electrodes 175a and 175b, and a general voltage line 278 are formed on the boundary insulating film 160.

The data line 171 transmitting the data signal extends substantially in the vertical direction and passes through the gate line 121. Each of the data lines 171 includes a plurality of first source electrodes 173a that are connected to the first source regions 153a through the contact holes 163a. Each data line 171 includes an extended end region having a large area to be coupled to other layers or an external drive circuit. The data line 171 can be directly connected to the data drive circuit to generate a data signal that can be incorporated onto the substrate 110.

The driving voltage line 172 that transmits the driving voltage to the driving transistor Qd extends substantially vertically and passes through the gate line 121. Each of the driving voltage lines 172 includes a plurality of second source electrodes 173b connected to the second source regions 153b via the contact holes 163b. The driving voltage lines 172 can be connected to each other.

The first drain electrode 175a is separated from the data line 171 and the driving voltage line 172 is coupled to the first drain region 155a through the contact hole 165a and to the second gate electrode 124b via the contact hole 164.

The second drain electrode 175b is separated from the data line 171 and the driving voltage line 172 is coupled to the second drain region 155b across the contact hole 165b.

The general voltage line 278 includes a general voltage contact pad 279 disposed proximate the upper edge of the substrate 110 as shown in FIG. The general voltage line 278 can be formed on the layer where the gate line 121 is located.

The data conductors 171, 172, 175a, 175b and 278 may be made of a reflective metal comprising chromium, molybdenum, titanium, niobium or alloys thereof. They have a multilayer structure comprising a low-resistance film and an excellent contact film. One of the multi-layer structures exemplifies a two-layer structure consisting of a lower chromium film and an upper aluminum (alloy) film, a two-layer structure composed of a lower molybdenum film and an upper aluminum (alloy) film, and a lower molybdenum film and a middle aluminum film. And a three-layer structure composed of an upper molybdenum film.

For the gate conductors 121 and 124b, the data conductors 171, 172, 175a, 175b and 278 have inclination angle curves corresponding to the substrate from 30 to 80 degrees.

A passivation layer 180 is formed on the data conductors 171, 172, 175a, 175b and 278. The passivation layer 180 is a photosensitive organic material having excellent flat properties, and a low dielectric insulating material such as amorphous germanium formed by plasma assisted chemical vapor deposition (PECVD): C: O and amorphous germanium: O: F or an inorganic material such as tantalum nitride and tantalum oxide.

The passivation layer 180 has a plurality of contact holes 185 and 188 that contact the second drain electrode 175b and the common voltage line 278, respectively. The passivation layer 180 may further include a plurality of contact holes (not shown) contacting the end portions of the data lines 171, and the passivation layer 180 and the boundary insulating layer 160 may have contact currents of the end portions of the plurality of contact gate lines 121. Hole (not shown). When the general voltage line 278 is disposed under the boundary insulating layer 160, the contact hole 188 can penetrate the boundary insulating layer 160.

A plurality of pixel electrodes s190 and a contact assistant 88 may be formed on the passive layer 180.

The pixel electrode 190 can serve as an anode of the light-emitting element LD as shown in FIG. 2, and they can be coupled to the second drain electrode 175b through the contact hole 185. The pixel electrode 190 and the contact assistant 88 may be made of a transparent conductor such as ITO or IZO. However, the pixel electrode 190 may be made of an opaque reflective conductor such as aluminum, silver, calcium, barium, and magnesium.

Contact aid 88 is coupled across contact hole 188 to a common voltage line 278 to cover the exposed portion of general voltage line 278. Contact assist 88 can be ignored, or more than one contact aid can be formed.

A plurality of contact aids or connecting members (not shown) may also be formed on the passive layer 180 such that they are bonded to the exposed end portions of the gate lines 121, the data lines 171, or the general voltage contact pads 279.

A spacer 360 separating the pixels of the organic light emitting diode display is formed on the passive layer 180 and the pixel electrode 190. The spacer 360 surrounds the pixel electrode 190 to define that the opening 365 is filled with the organic luminescent material. The separator 360 has a plurality of contact holes 368 that contact the contact 88 and is made of an organic or inorganic insulating material.

A plurality of light emitting components 370 are formed on the pixel electrode 190 and disposed in the opening 365 defined by the spacer 360. The light-emitting assembly 370 can be made of an organic material that emits red, green, and blue light. The red, green, and blue lighting assemblies 370 are regularly configured.

A general electrode 270 including a lower electrode 271 and an upper electrode 272 are formed on the light-emitting assembly 370 and the spacer 360. The general electrode 270 is provided by a general voltage Vcom.

The lower layer electrode 271 may be made of an insulator such as lithium fluoride or an alkali metal or alkaline earth metal such as barium, calcium or lithium, and the upper layer electrode 272 may be made of a low-resistance metal such as aluminum, silver or an alloy thereof. Contacting the lower layer electrode 271 to the light emitting assembly 370 can have a low work function such that the lower layer electrode 271 causes electrons to be injected into the light emitting assembly 370. The upper layer electrode 272 may be made of a low-impedance material that is oxidized so that the upper layer electrode 272 protects the lower layer electrode 271 and reduces the normal voltage Vcom distortion.

As shown in FIGS. 3 and 4, the upper electrode 272 includes a contact portion B that contacts the contact hole 88 through the contact hole 368, and the lower electrode 271 does not contact the contact assistant 88. This structure reduces the contact resistance between the general electrode 270 and the contact assistant 88 or the general voltage line 278. In detail, a metal having a low work function such as barium or calcium can be easily melted by a little heat, such as a phenomenon generated by the contact portion B, thereby increasing the contact resistance. In addition, an insulator such as lithium fluoride also increases the contact resistance. With the above structure, the upper layer electrode 272 is in contact with the contact assistant 88 but the lower layer electrode 271 is not. Therefore, the contact resistance between the general electrode 270 and the normal voltage line 278 can be reduced.

In the above organic light emitting diode display, a switching transistor Qs includes a first semiconductor island 151a, a first gate electrode 124a connected to the gate line 121, and a first source connected to the data line 171. The electrode 173a and a first drain electrode 175a. In addition, a driving transistor includes a second semiconductor island 151b, a second gate electrode 124b connected to the first drain electrode 175a, and a second drain electrode 175b connected to the pixel electrode 190. Moreover, a storage electrode region 157 connected to the second source region 153b and a storage electrode 127 connected to the second gate electrode 124b form a storage capacitor Cst. The transistors Qs and Qd shown in Figs. 5 to 7 are referred to as "upper gate transistors" because the gate electrodes 124a and 124b are disposed on the semiconductors 151a and 151b.

The organic light emitting device 370 may have a multilayer structure as shown in FIG. The organic light emitting device 370 includes at least one light emitting layer EML, and further includes an auxiliary layer to enhance the light emitting efficiency of the light emitting layer EML. The auxiliary layer may include an electron transport layer ETL and a hole transport layer HTL for enhancing electron and hole balance, and an electron injection layer EIL and a hole injection layer HIL for enhancing electron and hole injection. The electrode 271 under the electrode 270 can be used as the electron injection layer EIL.

Now, a manufacturing display panel technology shown in Figs. 3 to 8 will be described with reference to Figs. 9 to 27C.

Fig. 9, Fig. 11, Fig. 13, Fig. 15, Fig. 17, Fig. 19, Fig. 21, Fig. 23 and Fig. 25 are diagrams of Figs. 3 to 8 according to an embodiment of the present invention. The layout of the display panel in the middle of the process. 10A and 10B are cross-sectional views of the line segments XA-XA' and XB-XB' of the display panel of FIG. 9, respectively, and FIG. 10C is the line segment IV-IV' of the display panel of FIG. 3 A cross-sectional view of the steps. 12A and 12B are cross-sectional views of the line segments XIIA-XIIA' and XIIB-XIIB' of the display panel of Fig. 11, respectively, and Fig. 12C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps. 14A and 14B are cross-sectional views of the line segments XIVA-XIVA' and XIVB-XIVB' of the display panel of Fig. 13, respectively, and Fig. 14C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps. 16A and 16B are cross-sectional views of the line segments XVIA-XVIA' and XVIB-XVIB' of the display panel of Fig. 15, respectively, and Fig. 16C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps. 18A and 18B are cross-sectional views of the line segments XVIIIA-XVIIIA' and XVIIIB-XVIIIB' of the display panel of Fig. 17, respectively, and Fig. 18C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps. 20A and 20B are cross-sectional views of the line segments XXA-XXA' and XXB-XXB' of the display panel of Fig. 19, respectively, and Fig. 20C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps. 22A and 22B are cross-sectional views of the line segments XXIIA-XXIIA' and XXIIB-XXIIB' of the display panel of Fig. 21, respectively, and Fig. 22C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps. Figure 24A and Figure 24B are cross-sectional views of the line segments XXIVA-XXIVA' and XXIVB-XXIVB' of the display panel of Figure 23, respectively, and Figure 24C is the line segment IV-IV' of the display panel of Figure 3 A cross-sectional view of the steps. Figure 26A and Figure 26B are cross-sectional views of the line segments XXVIA-XXVIA' and XXVIB-XXVIB' of the display panel of Figure 25, respectively, and Figure 26C is the line segment IV-IV' of the display panel of Figure 3 A cross-sectional view of the steps. Figure 27A and Figure 27B are cross-sectional views of the line segments XXVIA-XXVIA' and XXVIB-XXVIB' along the display panel of Figure 25, respectively, and illustrate the steps below the steps shown in Figures 26A and 26B, and Figure 27C is a cross-sectional view of the display panel of Figure 3 taken along line IV-IV' at this step.

Referring to FIGS. 9 to 10C, a barrier layer 111 is formed on an insulating substrate 110, and a semiconductor layer made of amorphous germanium can be subjected to low pressure chemical vapor deposition (LPCVD) or plasma assisted chemical vapor phase. A deposition method (PECVD) or sputtering is deposited on the barrier layer 111.

Next, the semiconductor layer may be crystallized into polysilicon and photoetched into pairs of first and second semiconductor islands 151a and 151b. Alternatively, the semiconductor layer can be removed by an amorphous layer.

Referring to FIGS. 11 to 12C, a gate insulating layer 140 and a gate metal layer are substantially deposited on the substrate including the first and second semiconductor islands 151a and 151b, and a first photoresist PR1 is formed thereon. The gate metal layer is etched into a plurality of gate electrodes 124b including the storage electrode 127 and the plurality of gate metal members 120a by etching the mask using the first photoresist PR1. A P-type impurity is introduced into the portion of the second semiconductor island 151b which is not covered by the gate electrode 124b and the gate metal member 120a like the first photoresist PR1 to form a plurality of P-type non-essential regions 153b and 155b. . At this time, the first semiconductor island 151a is covered with the first photoresist PR1 and the gate metal member 120a to avoid impurity incorporation.

Referring to FIGS. 13 to 14C, the first photoresist PR1 is removed and the second photoresist PR2 is formed. The gate metal member 120a is etched into a plurality of gate lines 121 including the gate electrodes 124a by etching the mask using the second photoresist PR2. An N-type impurity is implanted into the portion of the first semiconductor island 151a which is not covered by the gate line 121 and the gate electrode 124b like the second photoresist PR2 to form a plurality of N-type non-essential regions 153a and 155a. At this time, the second semiconductor island 151b is covered with the second photoresist PR2 and impurity incorporation is prevented.

Referring to FIGS. 15 to 16C, an interlayer insulating film 160 is deposited and the boundary insulating film 160 and the gate insulating layer 140 are photoetched to form the same number of contact holes 164 as the plurality of contact gate electrodes 124b. The contact holes 163a, 163b, 165a, and 165b of the non-essential regions 153a, 153b, 155a, and 155b are respectively contacted.

Referring to FIGS. 17 to 18C, a plurality of data conductors including a plurality of data lines 171 and a plurality of driving voltage lines 172, the data line 171 further includes a first source electrode 173a and a plurality of driving voltage lines 172 further include a second The source electrode 173b, the plurality of first and second drain electrodes 175a and 175b, and the general voltage line 278 are formed on the boundary insulating layer 160.

Referring to Figures 19 through 20C, a passivation layer 180 is deposited and photoetched to form a plurality of contact holes 185 and 188 that contact the second drain electrode 175b and the common voltage line 278, respectively.

Referring to FIGS. 21 to 22C, a plurality of pixel electrodes 190 and a contact assistant 88 are formed on the passive layer 180. When the pixel electrodes 190 are made of a reflective opaque material, they are formed as a data metal layer along the data line 171.

Referring to Figures 23 through 24C, an insulating layer is deposited and imaged to form an opening 360 in the pixel electrode 190 and at least one contact hole 368 in the contact auxiliary 88.

Referring to Figures 25 to 26C, a plurality of organic light-emitting components 370 comprising at least one light-emitting layer and further having a plurality of layers are formed in openings 365 which are formed by a photomask formed by deposition or screen printing.

Referring to FIGS. 27A to 27C, the lower layer electrode 271 is formed by a photomask or the like so that the lower layer electrode 271 is not disposed on the contact hole 368.

An upper electrode 272 having a contact portion B disposed on the contact hole 368 is formed on the lower electrode 271 as shown in Figs. 3, 4, 6, and 7. Although not shown, the OLED element can be sealed with a sealing film or a metal closure.

It is apparent to those skilled in the art that various modifications and changes can be made without departing from the spirit and scope of the invention. It is therefore to be understood that the invention is intended to cover the modifications and modifications

88. . . Contact assistance

110. . . Matrix

111. . . Barrier layer

121. . . Gate line

124a. . . Gate electrode

124b. . . Gate electrode

127. . . Storage electrode

140. . . Gate insulation

151a. . . semiconductor

151b. . . semiconductor

153a. . . Source area

153b. . . Source area

155a. . . Bungee area

155b. . . Bungee area

157. . . Storage area

160. . . Boundary insulating film

163a. . . Contact hole

163b. . . Contact hole

164. . . Contact hole

165a. . . Contact hole

165b. . . Contact hole

171. . . Data line

172. . . Drive voltage line

173a. . . Source electrode

173b. . . Source electrode

175a. . . Bipolar electrode

175b. . . Bipolar electrode

180. . . Passive layer

185. . . Contact hole

188. . . Contact hole

190. . . Pixel electrode

270. . . General electrode

271. . . General electrode

272. . . General electrode

278. . . General voltage line

279. . . General voltage line

360. . . Separator

368. . . Contact hole

370. . . Luminous layer

400. . . Scan drive

500. . . Data driver

Cst. . . Storage capacitor

PR1. . . Photoresist

PR2. . . Photoresist

PR3. . . Photoresist

PR4. . . Photoresist

Qs. . . Switching transistor

Qd. . . Drive transistor

1 is a block diagram of an organic light emitting diode display in accordance with an embodiment of the present invention.

2 is an equivalent circuit diagram of a pixel in an organic light emitting diode display according to an embodiment of the invention.

3 is a plan view showing the structure of a display panel of an organic light emitting diode display according to an embodiment of the present invention.

Figure 4 is a cross-sectional view taken along line IV-IV' of the display panel of Figure 3.

Figure 5 is a layout diagram of the pixels and signal lines on the display panel in Figure 3.

Fig. 6 and Fig. 7 are cross-sectional views of the line segments VI-VI' and VII-VII' taken along the pixel and signal lines in Fig. 5, respectively.

Figure 8 is a structural view of an organic light-emitting element according to an embodiment of the present invention.

Fig. 9, Fig. 11, Fig. 13, Fig. 15, Fig. 17, Fig. 19, Fig. 21, Fig. 23 and Fig. 25 are diagrams 3, 4, and 4 according to an embodiment of the present invention. The layout of the display panel shown in Figure 5, Figure 6, and Figure 7 in the middle of the process.

10A and 10B are cross-sectional views of the line segments XA-XA' and XB-XB' of the display panel of FIG. 9, respectively, and FIG. 10C is the line segment IV-IV' of the display panel of FIG. 3 A cross-sectional view of the steps.

12A and 12B are cross-sectional views of the line segments XIIA-XIIA' and XIIB-XIIB' of the display panel of Fig. 11, respectively, and Fig. 12C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

14A and 14B are cross-sectional views of the line segments XIVA-XIVA' and XIVB-XIVB' of the display panel of Fig. 13, respectively, and Fig. 14C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

16A and 16B are cross-sectional views of the line segments XVIA-XVIA' and XVIB-XVIB' of the display panel of Fig. 15, respectively, and Fig. 16C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

18A and 18B are cross-sectional views of the line segments XVIIIA-XVIIIA' and XVIIIB-XVIIIB' of the display panel of Fig. 17, respectively, and Fig. 18C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

20A and 20B are cross-sectional views of the line segments XXA-XXA' and XXB-XXB' of the display panel of Fig. 19, respectively, and Fig. 20C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

22A and 22B are cross-sectional views of the line segments XXIIA-XXIIA' and XXIIB-XXIIB' of the display panel of Fig. 21, respectively, and Fig. 22C is the line segment IV-IV' of the display panel of Fig. 3 A cross-sectional view of the steps.

Figure 24A and Figure 24B are cross-sectional views of the line segments XXIVA-XXIVA' and XXIVB-XXIVB' of the display panel of Figure 23, respectively, and Figure 24C is the line segment IV-IV' of the display panel of Figure 3 A cross-sectional view of the steps.

Figure 26A and Figure 26B are cross-sectional views of the line segments XXVIA-XXVIA' and XXVIB-XXVIB' of the display panel of Figure 25, respectively, and Figure 26C is the line segment IV-IV' of the display panel of Figure 3 A cross-sectional view of the steps.

Figure 27A and Figure 27B are cross-sectional views of the line segments XXVIA-XXVIA' and XXVIB-XXVIB' along the display panel of Figure 25, respectively, and illustrate the steps below the steps shown in Figures 26A and 26B, and Figure 27C is a cross-sectional view of the display panel of Figure 3 taken along line IV-IV' at this step.

88. . . Contact assistance

110. . . Matrix

111. . . Barrier layer

140. . . Gate insulation

160. . . Boundary insulating film

180. . . Passive layer

188. . . Contact hole

270. . . General electric bar

271. . . General electrode

272. . . General electrode

278. . . General voltage line

360. . . Separator

368. . . Contact hole

Claims (15)

A display panel for an organic light emitting display, the panel comprising: a plurality of anode electrodes; a cathode electrode that supplies a predetermined voltage and includes a first portion facing the anode electrode and a second portion receiving a predetermined voltage and having a different cross section than the first portion Configuring a plurality of light emitting components between the anode electrode and the cathode electrode; a wire that transmits a predetermined voltage and contacts the second portion of the cathode electrode; and an insulating layer disposed on the wire and located under the light emitting components, wherein The insulating layer includes a contact hole exposing at least a portion of the wire, wherein the cathode electrode includes a first layer containing an alkali metal or an alkaline earth metal and a second layer containing aluminum or an aluminum alloy, wherein the cathode electrode is The first portion includes the first layer and the second layer, the cathode electrode includes only the second layer in the second portion, and wherein the second layer in the second portion of the cathode electrode is via the contact A hole is connected to the wire. The display panel of claim 1, wherein the first layer contacts the light emitting component and is disposed between the anode electrode and the second layer. A display panel according to item 2 of the patent application, wherein the first layer is separated from the wires. A display panel according to item 1 of the patent application, wherein the first layer has a lower work function than the second layer. A display panel according to item 1 of the patent application, wherein the first layer comprises bismuth, calcium or lithium. The display panel of claim 1, wherein the first layer has lithium fluoride. A display panel as in claim 1 wherein the second layer has a lower resistivity than the first layer. The display panel of claim 1, wherein the first layer is more oxidizable than the second layer. The display panel of claim 1, wherein the wire has a multilayer structure. A display panel for an organic light emitting display, the panel comprising: a plurality of anode electrodes; a plurality of light emitting components respectively disposed on the anode electrode; and a second portion comprising a first portion disposed on the light emitting component and separated from the light emitting component a metal layer; a wire connected to the second portion of the metal layer; and an insulating layer disposed on the wire and under the light emitting component, wherein the wire is disposed on a layer below the layer where the light emitting component is located, wherein the insulating layer The layer is disposed under the cathode electrode and includes a contact hole exposing at least a portion of the wire, Wherein the cathode electrode comprises a first layer comprising an alkali metal or an alkaline earth metal and a second layer comprising aluminum or an aluminum alloy, wherein the cathode electrode comprises the first layer and the second layer in the first portion, the cathode The electrode includes only the second layer in the second portion, and wherein the second layer in the second portion of the cathode electrode is connected to the wire via the contact hole. A display panel according to item 10 of the patent application, further comprising a contact assisting arrangement between the wire and the metal layer. The display panel of claim 11, wherein the anode electrode comprises a transparent material. The display panel of claim 12, wherein the contact assistant and the anode electrode are disposed on the same layer. The display panel of claim 10, further comprising: a scan line; a data line; a switching transistor connected to one of the scan line and the data line; and a driving circuit connected to the switching transistor and an anode electrode a crystal; and a capacitor connected between the terminals of the driving transistor. The display panel of claim 14, wherein the wire comprises the same layer as the scan line and the data line.