TWI385781B - Lead frame - Google Patents
Lead frame Download PDFInfo
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- TWI385781B TWI385781B TW097102444A TW97102444A TWI385781B TW I385781 B TWI385781 B TW I385781B TW 097102444 A TW097102444 A TW 097102444A TW 97102444 A TW97102444 A TW 97102444A TW I385781 B TWI385781 B TW I385781B
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- Prior art keywords
- lead frame
- base
- insulating body
- light
- insulative housing
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Led Device Packages (AREA)
Description
本發明係關於一種可承載多個發光晶片的導線架,且特別是有關於一種可阻止外界水氣滲入其內與發光晶片接觸之導線架。The present invention relates to a lead frame that can carry a plurality of light-emitting wafers, and more particularly to a lead frame that prevents external moisture from penetrating into contact with the light-emitting wafer.
近年來,由於發光二極體(Light Emitting Diode,LED)具有體積短小以及單一熱量低的優勢,LED的相關應用越來越多。目前LED的主流應用在於電子產品的背光照明,例如:手機、筆記型電腦以及電視。這些電子產品一般所需要的背光是白光,白光LED的製作方式為目前LED產業的重要議題之一。目前而言,白光LED的製作方式大致可分為激發螢光粉出光或是利用三原色LED(紅、藍、綠)混光。激發螢光粉出光的方式大致可分為藍光LED搭配黃色螢光粉、藍光LED搭配紅色及綠色螢光粉或是紫外光LED搭配三原色螢光粉。一般而言,RGB三色LED混光有著色彩飽和度較高以及發光亮度較高的優點,因此普遍應用於高階電子產品中。In recent years, LEDs have become more and more popular in applications due to their short size and low heat. At present, the mainstream application of LED is the backlighting of electronic products, such as mobile phones, notebook computers and televisions. The backlights that these electronic products generally require are white light, and the production of white LEDs is one of the important topics in the LED industry. At present, the production method of white LEDs can be roughly divided into excitation of phosphor powder or use of three primary color LEDs (red, blue, green). The way to stimulate the fluorescent powder to light out can be roughly divided into blue LED with yellow fluorescent powder, blue LED with red and green fluorescent powder or ultraviolet LED with three primary fluorescent powder. In general, RGB three-color LED mixed light has the advantages of high color saturation and high luminance, so it is widely used in high-end electronic products.
另外,目前在照明市場上,LED有逐漸取代傳統照明燈具之趨勢,諸如車用頭燈、探照燈、以及室內照明等。由於上述照明市場必須要有足夠的光強度,才能夠遠距離的辨識物體,因此,目前市面上已逐漸開發有高亮度照明之發光裝置。如圖一所示,即為為目前市面上既有之高亮度照明之發光裝置。In addition, in the lighting market, LEDs have gradually replaced traditional lighting fixtures, such as automotive headlights, searchlights, and indoor lighting. Since the above lighting market must have sufficient light intensity to be able to identify objects at a distance, a light-emitting device with high-intensity illumination has been gradually developed on the market. As shown in Figure 1, it is a light-emitting device that is currently available on the market with high-brightness illumination.
由於具有高亮度發光能力的發光裝置1,不管是利用激發螢光出光方式或是RGB三色LED混光方式,都需要設置多個發光二極體12於導線架10上,在實際應用上可能高達數十個甚至一百個或更多的發光二極體12,本處僅以設置複數個發光二極體12加以說明之。因此,基座102必須形成較大之面積,讓多個發光二極體12得以同時排列於該基座102上方,並使多個發光二極體12所產生之熱能得以透過基座102進行熱能傳遞,進而將其向外排出。而為了解決散熱問題,故需於基座102之底部貼合有一散熱構件14,以使熱量得以透過基座102傳遞至散熱構件14上。進而,透過散熱構件14與空氣產生熱交換而達到快速散熱的效果。Since the light-emitting device 1 having high-brightness light-emitting capability, whether by using the excitation fluorescent light-emitting method or the RGB three-color LED light mixing method, a plurality of light-emitting diodes 12 are required to be disposed on the lead frame 10, which may be practically applied. Up to tens or even one hundred or more light-emitting diodes 12 are described herein only by providing a plurality of light-emitting diodes 12. Therefore, the pedestal 102 must form a large area, so that the plurality of illuminating diodes 12 are simultaneously arranged above the susceptor 102, and the thermal energy generated by the plurality of illuminating diodes 12 can be transmitted through the susceptor 102 for thermal energy. Pass and then expel it outward. In order to solve the heat dissipation problem, a heat dissipating member 14 is attached to the bottom of the base 102 so that heat can be transmitted to the heat dissipating member 14 through the base 102. Further, the heat radiating member 14 exchanges heat with the air to achieve rapid heat dissipation.
但是,承載多個發光二極體12的導線架10,為了提供具有較大散熱面積之基座102,需將基座102製成平板狀,再於基座102上方成型有絕緣本體100,且基座102之面積大於絕緣本體100。而絕緣本體100於基座102上成型時,為了不致產生脫落,因此在基座102上設有複數個通孔1024,使絕緣本體100能透過通孔1024與基座102互相固接。而基座102為了與散熱構件14結合,因此基座102上必須設置有鎖固孔1026,以使基座102得以透過該鎖固元件16(如圖一所示之螺絲)被鎖固於散熱構件14上。However, in order to provide the susceptor 10 having a plurality of illuminating diodes 12, in order to provide the susceptor 102 having a large heat dissipating area, the pedestal 102 is formed into a flat shape, and the insulating body 100 is formed over the susceptor 102, and The area of the susceptor 102 is larger than the insulative housing 100. When the insulative housing 100 is formed on the base 102, a plurality of through holes 1024 are formed in the base 102 so that the insulative housing 100 can be fixed to the base 102 through the through holes 1024. In order to be coupled with the heat dissipating member 14, the base 102 must be provided with a locking hole 1026 so that the base 102 can be locked to the heat through the locking component 16 (screw as shown in FIG. 1). On member 14.
前述結構,絕緣本體100僅透過通孔1024與基座102結合。但絕緣本體100係以射出成型方式結合於基座102上,故其絕緣本體100與該基座102間形成有一水平之貼合面,但由於絕緣本體100利用射出成型技術於基座102上成形時,由於絕緣本體100與基座102係為兩種不同材質之材料所構成,因此,絕緣本體100無法有效緊密的貼合於該基座102上,故需透過通孔1024達到絕緣本體100與基座102之結合。In the foregoing structure, the insulative housing 100 is coupled to the base 102 only through the through hole 1024. However, the insulative housing 100 is bonded to the base 102 by injection molding. Therefore, a horizontal bonding surface is formed between the insulative housing 100 and the base 102. However, the insulative housing 100 is formed on the base 102 by injection molding. The insulative housing 100 and the base 102 are made of two different materials. Therefore, the insulative housing 100 cannot be effectively and closely attached to the base 102. Therefore, the insulative housing 100 is required to pass through the through hole 1024. The combination of the bases 102.
惟,由於該絕緣本體100以射出成形方式結合於該基座102上時,因射出成形必須經過冷卻收縮的過程,因此容易造成絕緣本體100的變形,造成絕緣本體100與基座102間之貼合面無法密合地相接觸,而於絕緣本體100與該基座102間之貼合面產生縫隙,致使水氣夾帶於空氣中,經由該未密合之貼合面所產生之縫隙進入絕緣本體100與基座102所產生之固晶區域中,而產生水氣滲入的問題,造成固晶區域內部之發光二極體12的損壞。再者,基座102係透過鎖固元件16與散熱構件14結合,因此,在鎖固的過程中,亦容易因為鎖固力道不平均造成基座102的翹曲變形,使絕緣本體100與基座102間產生縫隙,或是增大其縫隙,造成水氣滲入的情形加劇,嚴重影響發光裝置1之效能,更容易造成發光二極體12的失效,而縮短其使用壽命。However, since the insulative housing 100 is bonded to the base 102 by injection molding, the injection molding must undergo a process of cooling and shrinking, so that the deformation of the insulative housing 100 is easily caused, resulting in a sticker between the insulative housing 100 and the base 102. The mating surface cannot be in close contact with each other, and a gap is formed between the insulative surface of the insulative housing 100 and the base 102, so that the water vapor is entrained in the air, and the gap generated by the unadhesive bonding surface enters the insulation. In the solid crystal region generated by the body 100 and the susceptor 102, a problem of moisture infiltration occurs, causing damage to the light-emitting diode 12 inside the solid crystal region. In addition, the pedestal 102 is coupled to the heat dissipating member 14 through the locking component 16 . Therefore, during the locking process, the warping deformation of the susceptor 102 is also easily caused by the unevenness of the locking force, so that the insulating body 100 and the base are The gap between the seats 102 is increased, or the gap is increased, which causes the infiltration of water and gas to be intensified, which seriously affects the performance of the light-emitting device 1, and is more likely to cause failure of the light-emitting diode 12 and shorten its service life.
爰是,如何提供一種具有絕佳散熱效果,且能有效防止水氣滲入,進而延長使用壽命之高亮度發光裝置專用之導線架,即為本發明中所欲解決之問題。Therefore, how to provide a lead frame for a high-intensity light-emitting device that has an excellent heat dissipation effect and can effectively prevent moisture from penetrating and thereby prolonging the service life is a problem to be solved in the present invention.
本發明之一範疇在於提供一種具有絕佳散熱效果,且能有效防止水氣滲入,進而延長使用壽命之高亮度發光裝置專用之導線架。One aspect of the present invention is to provide a lead frame for a high-intensity light-emitting device that has an excellent heat dissipation effect and can effectively prevent moisture from penetrating and thereby prolonging the service life.
為達上述範疇,根據本發明之第一具體實施例,本發明之導線架包含有基座、絕緣本體以及支架。基座包含上端面及下端面,上端面更包含有第一表面及第二表面。其絕緣本體部份地包覆基座並同時與第一表面構成固晶區域,以藉由該固晶區域承載該複數發光晶片。定義第一表面係一高度參考面且下端面低於第一表面。第一表面與第二表面有一高度差。支架部份地被絕緣本體包覆,且包含與該等發光晶片電性連接之第一連接部及與電路電性連接之第二連接部。To achieve the above, according to a first embodiment of the present invention, the lead frame of the present invention comprises a base, an insulative body and a bracket. The base includes an upper end surface and a lower end surface, and the upper end surface further includes a first surface and a second surface. The insulating body partially covers the pedestal and simultaneously forms a solid crystal region with the first surface to carry the plurality of luminescent wafers by the solid crystal region. The first surface is defined as a height reference plane and the lower end surface is lower than the first surface. The first surface has a height difference from the second surface. The bracket is partially covered by the insulative housing and includes a first connecting portion electrically connected to the light emitting chips and a second connecting portion electrically connected to the circuit.
藉以透過該第一表面與該第二表面所形成之高低落差,以達到有效阻止水氣滲入發光裝置之效果。The effect of effectively preventing moisture from penetrating into the light-emitting device is achieved by the height difference formed by the first surface and the second surface.
此外,根據本發明第二具體實施例,基座之上端面進一步包含第三表面,第三表面、第一表面以及第二表面兩兩之間皆有一高度差。第三表面設於第一表面及第二表面之間。Further, according to the second embodiment of the present invention, the upper end surface of the base further includes a third surface, and the third surface, the first surface, and the second surface have a height difference therebetween. The third surface is disposed between the first surface and the second surface.
又根據本發明第三具體實施例,基座之上端面進一步包含第四表面,第四表面、第三表面、第一表面以及第二表面兩兩之間皆有一高度差。第三表面與第四表面相鄰地設於第一表面及第二表面之間。According to a third embodiment of the present invention, the upper end surface of the base further includes a fourth surface, and the fourth surface, the third surface, the first surface, and the second surface have a height difference therebetween. The third surface is disposed adjacent to the fourth surface between the first surface and the second surface.
藉以,根據上述多個具體實施例,本發明之導線架之基座利用之間形成有高度落差的多個表面,以使絕緣本體與該基座間形成有更為複雜之接觸面積,令其水氣從絕緣本體與基座之間的縫隙滲入後,除可延長水氣滲入路徑之長度亦可改變水氣之流動方向,以增加水氣滲入之困難度,進而有效避免水氣滲入到固晶區域與發光晶片接觸,以防止發光二極體失效或縮短其使用壽命。Therefore, according to the above specific embodiments, the pedestal of the lead frame of the present invention utilizes a plurality of surfaces formed with a height difference therebetween to form a more complicated contact area between the insulating body and the pedestal, so that the water is After the gas penetrates from the gap between the insulating body and the pedestal, the length of the water gas infiltration path can be extended to change the flow direction of the water gas to increase the difficulty of water gas infiltration, thereby effectively preventing water and gas from penetrating into the solid crystal. The area is in contact with the illuminating wafer to prevent the illuminating diode from failing or shortening its service life.
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.
本發明之導線架主要應用於具有高亮度照明的發光裝置上,因此需承載多數個發光晶片,其可承載數十個或一百個以上。實際上,發光晶片可為發光二極體、雷射二極體或其他半導體發光結構。The lead frame of the present invention is mainly applied to a light-emitting device having high-intensity illumination, and therefore needs to carry a plurality of light-emitting chips, which can carry tens or more than one hundred. In fact, the luminescent wafer can be a light emitting diode, a laser diode or other semiconductor light emitting structure.
相較於先前技術之導線架10(如圖一所示),本發明之導線架之基座包含多個之間具有高度差的表面以阻止水氣滲入發光裝置內。如圖二B中的導線架20所示,基座202之上端面2020包含第一表面20200以及低於第一表面20200之第二表面20202,致使該第一表面20200與該第二表面20202形成有一高低落差。另外,需補充說明的是,為了讓所有實施例都能具有明確的高度及正負方向定義,因此將基座之第一表面定義為一高度參考面,且將基座之下端面定義低於第一表面。In contrast to prior art leadframe 10 (shown in Figure 1), the pedestal of the leadframe of the present invention includes a plurality of surfaces having a height difference therebetween to prevent moisture from penetrating into the illuminating device. As shown in the lead frame 20 of FIG. 2B, the upper end surface 2020 of the susceptor 202 includes a first surface 20200 and a second surface 20202 lower than the first surface 20200, such that the first surface 20200 and the second surface 20202 are formed. There is a high and low drop. In addition, it should be added that in order to make all embodiments have a clear height and positive and negative direction definition, the first surface of the pedestal is defined as a height reference plane, and the lower end surface of the pedestal is defined lower than the first a surface.
當夾帶於空氣中的水氣經由絕緣本體200與基座202之間的縫隙滲入到第二表面20202後,水氣之滲入路徑會遇到由具有高度差的相近表面所形成的轉折處,轉折處可阻擋水氣的滲入甚至讓水氣反向流動。並且,水氣需克服該高度差才能滲入到第一表面20200,相對地延長了水氣欲與發光二極體4接觸所需滲入的路徑長度。再者,由於該第一表面20200與該第二表面20202間形成有一高度落差,致使該絕緣本體200成型於該基座202上時,其絕緣本體200會將該高低落差處填滿,並包覆於第一表面20200之周圍,而令該絕緣本體200與該第一表面20200之周緣形成較佳的緊密貼合效果,進而避免水氣滲入第一表面20200中。進而,本發明之導線架20達到阻擋外界水氣滲入固晶區域20204與發光二極體4接觸的目的。When the water entrained in the air penetrates into the second surface 20202 through the gap between the insulative housing 200 and the base 202, the infiltration path of the water vapor encounters a turning point formed by a similar surface having a height difference, turning It can block the infiltration of moisture and even the reverse flow of water. Moreover, the water gas needs to overcome the height difference to penetrate into the first surface 20200, and relatively lengthens the path length of the water gas to be infiltrated into contact with the light-emitting diode 4. Moreover, since the height difference is formed between the first surface 20200 and the second surface 20202, when the insulating body 200 is formed on the base 202, the insulating body 200 fills the height difference and is packaged. Covering the periphery of the first surface 20200, the insulating body 200 forms a better close fit with the periphery of the first surface 20200, thereby preventing moisture from penetrating into the first surface 20200. Further, the lead frame 20 of the present invention achieves the purpose of blocking the penetration of external moisture into the solid crystal region 20204 and contacting the light-emitting diode 4.
再者,基座之上端面可包含更多之間具有高度差的表面,如圖三A中的導線架21及圖四中的導線架22所示。相較於圖二B中的基座202,圖三A及圖三B中的基座212之上端面2120進一步包含第三表面21204,第三表面21204皆高於第一表面21200及第二表面21202。相較於圖三A中的基座212,圖四中的基座222之上端面2220進一步包含第四表面22206,第四表面皆低於第一表面22200及第二表面22202。藉此,絕緣本體及基座之間的接觸面具有更多能阻擋水氣滲入的轉折處,且相對地延長了水氣從外界到固晶區域的滲入路徑。另外,絕緣本體藉由填滿多個轉折處(亦即,高低落差處)更能緊密地貼合於基座,以阻止外界水氣滲入導線架內。Furthermore, the upper end surface of the pedestal may include more surfaces having a height difference therebetween, as shown by the lead frame 21 in FIG. 3A and the lead frame 22 in FIG. The upper end surface 2120 of the susceptor 212 in FIG. 3A and FIG. 3B further includes a third surface 21204, which is higher than the first surface 21200 and the second surface, as compared with the pedestal 202 in FIG. 21202. Compared with the pedestal 212 in FIG. 3A, the upper end surface 2220 of the pedestal 222 in FIG. 4 further includes a fourth surface 22206, and the fourth surface is lower than the first surface 22200 and the second surface 22202. Thereby, the contact surface between the insulating body and the pedestal has more turning points capable of blocking the penetration of moisture, and relatively prolongs the infiltration path of moisture from the outside to the solid crystal region. In addition, the insulating body can be more closely attached to the pedestal by filling a plurality of turning points (that is, at the height difference) to prevent external moisture from penetrating into the lead frame.
另外,如圖二D所示的導線架20之基板202與絕緣本體202之尺寸大致相同,因此絕緣本體200及基座202(如圖二C所示)皆需開一鎖固孔,讓螺絲可鎖入該鎖固孔,將導線架20鎖固於散熱構件5上(如圖二D所示)。但是,本發明之導線架不限於此,如圖五所示之導線架23之基座232之尺寸小於絕緣本體230,因此只需在絕緣本體230上開一鎖固孔,螺絲可不穿過基板232而鎖入散熱構件。由於絕緣本體230能吸收部份鎖固力道,且基板232並未直接受力(未被螺絲穿過),所以導線架23被鎖固於散熱構件5上時,基板232較不容易翹屈變形,進而不會產生或加大絕緣本體230與基板232之間的縫隙,更能阻止水氣滲入導線架23內。In addition, the substrate 202 of the lead frame 20 shown in FIG. 2D is substantially the same size as the insulative housing 202. Therefore, the insulating body 200 and the base 202 (as shown in FIG. 2C) need to be opened with a locking hole for the screw. The locking hole can be locked, and the lead frame 20 is locked on the heat dissipating member 5 (as shown in FIG. 2D). However, the lead frame of the present invention is not limited thereto, and the base 232 of the lead frame 23 shown in FIG. 5 is smaller in size than the insulating body 230, so that only a locking hole is required to be opened on the insulating body 230, and the screw does not pass through the substrate. 232 and locked into the heat dissipating member. Since the insulative housing 230 can absorb a part of the locking force, and the substrate 232 is not directly stressed (not through the screw), when the lead frame 23 is locked on the heat dissipating member 5, the substrate 232 is less likely to be warped and deformed. Therefore, the gap between the insulating body 230 and the substrate 232 is not generated or increased, and the moisture is prevented from penetrating into the lead frame 23.
由於射出成型的絕緣本體會冷卻收縮或是基座受鎖固力道會翹曲變形,而在基座與絕緣本體之間產生縫隙。若絕緣本體與基座之間的接合力越大,產生的縫隙就會相對地越小。欲將絕緣本體與基座緊密地相接合,除了間接地利用螺絲的鎖固力道之外,還可從增加絕緣本體與基座之間接合力的方向著手。可以在基座上設置多個通孔,如圖二B及圖二C所示之包含多個通孔2024的基座202,還可以在基座四周設置凹槽,如圖六A及圖六B所示之基座242。絕緣本體240於射出成型時填滿凹槽2424,進而增加絕緣本體240與基座242之間的縱向接合力(如圖六A所示之箭頭方向)。Since the injection molded insulating body is cooled or contracted or the base is locked by the locking force, a gap is formed between the base and the insulating body. If the bonding force between the insulating body and the pedestal is larger, the resulting gap will be relatively smaller. In order to tightly engage the insulating body and the base, in addition to indirectly utilizing the locking force of the screw, the direction of the joining force between the insulating body and the base can be increased. A plurality of through holes may be disposed on the base, as shown in FIG. 2B and FIG. 2C, the base 202 including the plurality of through holes 2024, and a groove may be disposed around the base, as shown in FIG. 6A and FIG. Base 242 shown in B. The insulative housing 240 fills the recess 2424 during injection molding, thereby increasing the longitudinal engagement force between the insulative housing 240 and the base 242 (as indicated by the arrow direction in FIG. 6A).
於阻擋水氣滲入的目的之外,本發明的導線架於結構及材料方面還可有其他的變化以更快地散發或導引發光二極體所產生的熱量。當然,下述之導線架之基座仍然包含之間具有高度差的多個表面以達到阻止水氣滲入的主要目的。In addition to the purpose of blocking moisture infiltration, the leadframe of the present invention may have other variations in structure and materials to more quickly dissipate or direct the heat generated by the LED. Of course, the base of the lead frame described below still contains a plurality of surfaces having a height difference therebetween to achieve the main purpose of preventing moisture from penetrating.
為了快速地散去高亮度照明發光裝置所產生的熱量,導線架之基座可使用導熱係數較高的材料製成。一般而言,基座之材料為鋁或銅,導線架的基座理論上全部用導熱係數較高的銅製成即可,但是銅的成本較鋁昂貴。因此,實際作法是把兩個不同材料製成的部份組合為基座,如圖五A及圖五B之基座252所示,基座252包含第一子基座2520及第二子基座2522。第一子基座2520之材料為銅,第二子基座2522之材料為鋁。尺寸較小且銅製之第一子基座2520用以承載多個發光二極體,以快速導去熱量。尺寸較大且鋁製之第二子基座2522可容納第一子基座2520,除了幫助散去第一子基座2520傳導來的熱量之外,面積較大的第二子基座2522還可增加與散熱構件的熱交換量以快速散去熱量。進而,基座252兼顧了散熱速率承製造成本的要求。In order to quickly dissipate the heat generated by the high-intensity illumination device, the base of the lead frame can be made of a material having a high thermal conductivity. Generally, the material of the pedestal is aluminum or copper, and the pedestal of the lead frame is theoretically all made of copper having a higher thermal conductivity, but the cost of copper is more expensive than aluminum. Therefore, the actual method is to combine two parts made of different materials into a base, as shown in the base 252 of FIG. 5A and FIG. 5B, the base 252 includes a first sub-base 2520 and a second sub-base. Block 2522. The material of the first sub-mount 2520 is copper, and the material of the second sub-base 2522 is aluminum. The first sub-base 2520 of small size and copper is used to carry a plurality of light-emitting diodes to quickly conduct heat. The second sub-base 2522 of larger size and aluminum can accommodate the first sub-mount 2520. In addition to helping to dissipate the heat conducted by the first sub-mount 2520, the second sub-base 2522 having a larger area is further The amount of heat exchange with the heat dissipating member can be increased to dissipate heat quickly. Further, the susceptor 252 takes into consideration the heat dissipation rate and the manufacturing cost.
除了上述利用高導熱係數材料的方法之外,還可以利用增大散熱面積的方法增加散熱速率,如圖八A至圖八C所示。圖八A中的導線架26之基座262包含散熱板2624,散熱板2624對稱地向外突出於絕緣本體260。舉例而言,圖八B中的散熱板2624向外突出於絕緣本體260兩側,圖六C中的散熱板2624向外突出於絕緣本體260四周。突出於絕緣本體260的散熱板2624除了可增加散熱面積之外,多個導線架26之間還可以互相連接各自的散熱板2624以平均分散熱量,避免熱量過於集中。In addition to the above method using a high thermal conductivity material, the heat dissipation rate can be increased by increasing the heat dissipation area, as shown in FIGS. 8A to 8C. The base 262 of the leadframe 26 in FIG. 8A includes a heat sink 2624 that protrudes symmetrically outwardly from the insulative housing 260. For example, the heat dissipation plate 2624 in FIG. 8B protrudes outward from the two sides of the insulative housing 260, and the heat dissipation plate 2624 in FIG. 6C protrudes outwardly around the insulative housing 260. The heat dissipation plate 2624 protruding from the insulative housing 260 can not only increase the heat dissipation area, but also interconnect the respective heat dissipation plates 2624 between the plurality of lead frames 26 to disperse heat evenly, thereby avoiding excessive concentration of heat.
另外,增加散熱速率的方法還可如圖九所示之基座272突出於絕緣本體270之下緣。散熱構件6包含相配於基座272突出部分的內凹空間,進而增加基座272與散熱構件6之間的接觸面積以增加散熱效率。當然,本發明不限於此,基座也可包含一內凹空間與散熱構件的外突部份相嵌。In addition, the method of increasing the heat dissipation rate may also protrude from the lower edge of the insulative housing 270 as shown in FIG. The heat dissipating member 6 includes a concave space that is matched with the protruding portion of the susceptor 272, thereby increasing the contact area between the susceptor 272 and the heat dissipating member 6 to increase heat dissipation efficiency. Of course, the present invention is not limited thereto, and the pedestal may also include a concave space embedded in the protruding portion of the heat dissipating member.
另外,本發明之導線架還可有其他變化以適用於不同用途上,例如:與電路的連接方式、與發光二極體的連接方式以及外觀呈現。當然,下述之導線架之基座仍然包含之間具有高度差的多個表面以達到阻止水氣滲入的主要目的。In addition, the lead frame of the present invention may have other variations to suit different applications, such as the manner of connection to the circuit, the manner of connection to the light emitting diode, and the appearance. Of course, the base of the lead frame described below still contains a plurality of surfaces having a height difference therebetween to achieve the main purpose of preventing moisture from penetrating.
於導線架與電路的連接方式上,圖二B中的導線架20之支架204埋入於絕緣本體200內,除了露出第一連接部2040與發光二極體4電性連接之外,只露出第二連接部2042透過接線電性連接至與外部電路,以提供發光二極體4電源。當然,支架之設置方法不限於此,支架可突出於絕緣本體,如圖十A至圖十C所示。視電路板與支架的實際焊接情況,突出於絕緣本體且與電路板相連接之第二連接部可保持平直或是彎曲以利於焊接。舉例來說,若導線架28嵌入於電路板(虛線所示)之凹陷區域,如圖十A及圖十B所示,支架284之第二連接部2842可保持平直以貼近電路板。若導線架28直接置放於電路板(虛線所示)上,如圖十C所示,第二連接部2842需折彎以貼近電路板。藉此,過錫爐時,電路板上的錫膏可輕易地黏附於第二連接部2842。The bracket 204 of the lead frame 20 in FIG. 2B is embedded in the insulative housing 200 except that the first connecting portion 2040 is electrically connected to the LED 4, and is exposed only in the manner of connecting the lead frame and the circuit. The second connecting portion 2042 is electrically connected to the external circuit through the wiring to provide the power of the light emitting diode 4. Of course, the method of setting the bracket is not limited thereto, and the bracket may protrude from the insulating body, as shown in FIG. 10A to FIG. Depending on the actual soldering of the board and the bracket, the second connection protruding from the insulative housing and connected to the board can remain flat or curved to facilitate soldering. For example, if the leadframe 28 is embedded in a recessed area of the circuit board (shown in phantom), as shown in FIGS. 10A and 10B, the second connecting portion 2842 of the bracket 284 can remain flat to be close to the circuit board. If the lead frame 28 is placed directly on the circuit board (shown in dashed lines), as shown in FIG. 10C, the second connecting portion 2842 needs to be bent to be close to the circuit board. Thereby, the solder paste on the circuit board can be easily adhered to the second connection portion 2842 when the tin furnace is passed.
於導線架之支架與發光二極體的連接方式上,以圖二A中排成陣列的其中一列發光二極體4為例,如圖二B所示的支架240之第一連接部2040只電性連接至該列發光二極體4中最靠近第一連接部2040的發光二極體4,其他發光二極體4之間只以接線互相電性連接。若該列發光二極體4其中之一發光二極體4損壞失效,該列發光二極體4皆無法發光。因此,如圖十一所示之支架294包含多個第一連接部2940,每個第一連接部2940皆與第二連接部2942相連接。每一個第一連接部2940係一長條狀,可電性連接一列發光二極體7中每一個發光二極體7,因此該列其中一個發光二極體7損壞失效,不會影響到其他發光二極體7運作。For example, in the connection manner of the bracket of the lead frame and the LED, one row of the LEDs 4 arranged in an array in FIG. 2A is taken as an example, and the first connecting portion 2040 of the bracket 240 shown in FIG. The light-emitting diodes 4 closest to the first connecting portion 2040 are electrically connected to the light-emitting diodes 4, and the other light-emitting diodes 4 are electrically connected to each other only by wires. If one of the light-emitting diodes 4 of the column of LEDs 4 fails, the column of LEDs 4 cannot emit light. Therefore, the bracket 294 shown in FIG. 11 includes a plurality of first connecting portions 2940, and each of the first connecting portions 2940 is connected to the second connecting portion 2942. Each of the first connecting portions 2940 is elongated and electrically connected to each of the LEDs 7 of the column of the LEDs. Therefore, one of the LEDs 7 in the column is damaged and does not affect other components. The light-emitting diode 7 operates.
於外觀呈現上,由於發光二極體的尺寸相較於一般燈管或燈泡所需的發光元件小很多,因此承載發光二極體的導線架可輕易地依實際應用或製造需求而改變外觀呈現,如圖十二及圖十三所示。圖十二中的基座302呈一圓形,圖十三中的基座312呈一橢圓形,且絕緣本體310呈一圓形。當然,基座302、基座312以及絕緣本體310之外觀不限於此,還可為三角形或其他多邊形。In appearance, since the size of the light-emitting diode is much smaller than that of a general lamp or a light bulb, the lead frame carrying the light-emitting diode can be easily changed according to actual application or manufacturing requirements. , as shown in Figure 12 and Figure 13. The base 302 in FIG. 12 has a circular shape, and the base 312 in FIG. 13 has an elliptical shape, and the insulative housing 310 has a circular shape. Of course, the appearance of the base 302, the base 312, and the insulative housing 310 is not limited thereto, and may be a triangle or other polygon.
需補充說明的是,上述多個實施例所描繪之基座與支架皆為分離,亦即,熱電分離式導線架。但是,本發明之導線架不限於此,基座也可與其中一側的支架一體成形,亦即,熱電共體式導線架。It should be noted that the susceptor and the bracket depicted in the above various embodiments are separated, that is, the thermoelectric separation type lead frame. However, the lead frame of the present invention is not limited thereto, and the base may be integrally formed with one of the brackets, that is, the thermoelectric type lead frame.
相較於先前技術,本發明之導線架之基座利用之間形成有高度落差的多個表面,以使絕緣本體與該基座間形成有更為複雜之接觸面積,令其水氣從絕緣本體與基座之間的縫隙滲入後,除可延長水氣滲入路徑之長度亦可改變水氣之流動方向,以增加水氣滲入之困難度,進而有效避免水氣滲入到固晶區域與發光晶片接觸,以防止發光二極體失效或縮短其使用壽命。再者,本發明之導線架之基座除了設置通孔或凹槽之外,還可利用鎖固元件,以增加基座與絕緣本體之間的接合力,進而減小絕緣本體與基座之間的縫隙,因此可減少水氣滲入量。另外,本發明之導線架可具有突出於絕緣本體之散熱板以及使用不同材料所製成之基板,以增加散熱效率。綜上所述,本發明之導線架具有絕佳散熱效果,且能有效防止水氣滲入,進而延長高亮度發光裝置的使用壽命。Compared with the prior art, the base of the lead frame of the present invention utilizes a plurality of surfaces formed with a height drop therebetween to form a more complicated contact area between the insulating body and the base, so that the water vapor is from the insulating body. After infiltrating into the gap between the base and the base, the length of the water infiltration path can be extended to change the flow direction of the water vapor to increase the difficulty of infiltration of water and gas, thereby effectively preventing the infiltration of water and gas into the solid crystal region and the light emitting wafer. Contact to prevent the LED from failing or shortening its service life. Furthermore, in addition to the through hole or the recess, the base of the lead frame of the present invention can utilize a locking component to increase the bonding force between the base and the insulating body, thereby reducing the insulating body and the base. The gap between them can reduce the amount of moisture infiltration. In addition, the lead frame of the present invention may have a heat sink protruding from the insulating body and a substrate made of a different material to increase heat dissipation efficiency. In summary, the lead frame of the present invention has an excellent heat dissipation effect, and can effectively prevent moisture from infiltrating, thereby prolonging the service life of the high-intensity light-emitting device.
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the
1...發光裝置1. . . Illuminating device
10、20、21、22、23、26、28...導線架10, 20, 21, 22, 23, 26, 28. . . Lead frame
100、200、230、240、260、270、280、310...絕緣本體100, 200, 230, 240, 260, 270, 280, 310. . . Insulating body
102、202、212、222、232、242、252、262、272、302、312...基座102, 202, 212, 222, 232, 242, 252, 262, 272, 302, 312. . . Pedestal
12、4、7...發光二極體12, 4, 7. . . Light-emitting diode
14、5、6...散熱構件14, 5, 6. . . Heat sink
16...鎖固構件16. . . Locking member
204、284、294...支架204, 284, 294. . . support
2022...下端面2022. . . Lower end
2020、2120、2220...上端面2020, 2120, 2220. . . Upper end
1026...鎖固孔1026. . . Locking hole
1024、2024...通孔1024, 2024. . . Through hole
2424...凹槽2424. . . Groove
2624...散熱板2624. . . Radiating plate
2520...第一子基座2520. . . First sub-base
2522...第二子基座2522. . . Second sub-base
21204...第三表面21204. . . Third surface
22206...第四表面22206. . . Fourth surface
20204...固晶區域20204. . . Solid crystal region
2040、2940...第一連接部2040, 2940. . . First connection
2042、2842、2942...第二連接部2042, 2842, 2942. . . Second connection
20200、21200、22200...第一表面20200, 21200, 22200. . . First surface
20202、21202、22202...第二表面20202, 21202, 22202. . . Second surface
圖一係繪示先前技術之導線架之示意圖。Figure 1 is a schematic view showing a lead frame of the prior art.
圖二A係繪示根據本發明第一具體實施例之導線架之示意圖。Figure 2A is a schematic view of a lead frame according to a first embodiment of the present invention.
圖二B係繪示圖二A中的導線架沿A-A線之剖面圖。Figure 2B is a cross-sectional view of the lead frame of Figure 2A taken along line A-A.
圖二C係繪示圖二A中的基座與支架之示意圖。Figure 2C is a schematic view of the base and the bracket of Figure 2A.
圖二D係繪示圖二A中的導線架與散熱片貼合之示意圖。Figure 2D is a schematic view showing the bonding of the lead frame and the heat sink in Figure 2A.
圖三A係繪示根據本發明第二具體實施例之導線架之示意圖。Figure 3A is a schematic view of a lead frame according to a second embodiment of the present invention.
圖三B係繪示圖三A中的基座之示意圖。Figure 3B is a schematic view of the susceptor in Figure 3A.
圖四係繪示根據本發明第三具體實施例之導線架之示意圖。Figure 4 is a schematic view showing a lead frame according to a third embodiment of the present invention.
圖五係繪示根據本發明第四具體實施例之導線架之示意圖。Figure 5 is a schematic view showing a lead frame according to a fourth embodiment of the present invention.
圖六A係繪示根據本發明第五具體實施例之導線架之示意圖。Figure 6A is a schematic view showing a lead frame according to a fifth embodiment of the present invention.
圖六B係繪示圖六A中的基座之示意圖。Figure 6B is a schematic view of the susceptor of Figure 6A.
圖七A係繪示根據本發明第六具體實施例之導線架之示意圖。Figure 7A is a schematic view showing a lead frame according to a sixth embodiment of the present invention.
圖七B係繪示圖七A中的第一子基座與第二子基座之示意圖。Figure 7B is a schematic view showing the first sub-base and the second sub-base in Figure 7A.
圖八A係繪示根據本發明第七具體實施例之導線架之示意圖。Figure 8A is a schematic view showing a lead frame according to a seventh embodiment of the present invention.
圖八B係繪示對應圖八A中的導線架之立體圖。Figure 8B is a perspective view corresponding to the lead frame of Figure 8A.
圖八C係繪示對應圖八A中的導線架之另一立體圖。FIG. 8C is another perspective view corresponding to the lead frame in FIG. 8A.
圖九係繪示根據本發明第八具體實施例之導線架之示意圖。Figure 9 is a schematic view showing a lead frame according to an eighth embodiment of the present invention.
圖十A係繪示根據本發明第九具體實施例之導線架之示意圖。Figure 10A is a schematic view showing a lead frame according to a ninth embodiment of the present invention.
圖十B係繪示圖十A中的導線架沿A-A線之剖面圖。Figure 10B is a cross-sectional view of the lead frame taken along line A-A of Figure 10A.
圖十C係繪示圖十B之導線架包含折彎支架之示意圖。Figure 10C is a schematic view showing the lead frame of Figure 10B including a bent bracket.
圖十一係繪示根據本發明第十具體實施例之導線架之示意圖。Figure 11 is a schematic view showing a lead frame according to a tenth embodiment of the present invention.
圖十二係繪示根據本發明第十一具體實施例之基座之示意圖。Figure 12 is a schematic view showing a susceptor according to an eleventh embodiment of the present invention.
圖十三係繪示根據本發明第十二具體實施例之導線架之示意圖。Figure 13 is a schematic view showing a lead frame according to a twelfth embodiment of the present invention.
4...發光二極體4. . . Light-emitting diode
20...導線架20. . . Lead frame
200...絕緣本體200. . . Insulating body
202...基座202. . . Pedestal
204...支架204. . . support
2020...上端面2020. . . Upper end
2022...下端面2022. . . Lower end
2024...通孔2024. . . Through hole
20204...固晶區域20204. . . Solid crystal region
2040...第一連接部2040. . . First connection
2042...第二連接部2042. . . Second connection
20200...第一表面20200. . . First surface
20202...第二表面20202. . . Second surface
Claims (10)
Priority Applications (1)
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TW097102444A TWI385781B (en) | 2008-01-23 | 2008-01-23 | Lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW097102444A TWI385781B (en) | 2008-01-23 | 2008-01-23 | Lead frame |
Publications (2)
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TW200933871A TW200933871A (en) | 2009-08-01 |
TWI385781B true TWI385781B (en) | 2013-02-11 |
Family
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Family Applications (1)
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TW097102444A TWI385781B (en) | 2008-01-23 | 2008-01-23 | Lead frame |
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TW201128763A (en) * | 2010-02-11 | 2011-08-16 | Gem Weltronics Twn Corp | Multilayer array type light-emitting diode |
TW201128764A (en) * | 2010-02-11 | 2011-08-16 | Gem Weltronics Twn Corp | Method for packaging multilayer array-type light-emitting diode |
TWI449226B (en) * | 2011-05-20 | 2014-08-11 | Unistars | Thermal structure for led device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200534452A (en) * | 2004-04-15 | 2005-10-16 | Advanced Semiconductor Eng | Semiconductor package with heat spreader |
TW200614553A (en) * | 2004-09-10 | 2006-05-01 | Seoul Semiconductor Co Ltd | Light emitting diode package having multiple molding resins |
TW200735414A (en) * | 2005-06-10 | 2007-09-16 | Cree Inc | Power lamp package |
-
2008
- 2008-01-23 TW TW097102444A patent/TWI385781B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200534452A (en) * | 2004-04-15 | 2005-10-16 | Advanced Semiconductor Eng | Semiconductor package with heat spreader |
TW200614553A (en) * | 2004-09-10 | 2006-05-01 | Seoul Semiconductor Co Ltd | Light emitting diode package having multiple molding resins |
TW200735414A (en) * | 2005-06-10 | 2007-09-16 | Cree Inc | Power lamp package |
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