TW201128763A - Multilayer array type light-emitting diode - Google Patents

Multilayer array type light-emitting diode Download PDF

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Publication number
TW201128763A
TW201128763A TW99104396A TW99104396A TW201128763A TW 201128763 A TW201128763 A TW 201128763A TW 99104396 A TW99104396 A TW 99104396A TW 99104396 A TW99104396 A TW 99104396A TW 201128763 A TW201128763 A TW 201128763A
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Taiwan
Prior art keywords
light
emitting diode
array type
layer
emitting
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TW99104396A
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Chinese (zh)
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TWI427758B (en
Inventor
zhong-fu Hu
Yong-Fu Wu
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Gem Weltronics Twn Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires

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  • Led Device Packages (AREA)

Abstract

A multilayer array type light-emitting diode is provided. It includes a substrate, a package module, a wire rack and a mask. The substrate is disposed on a bottom of the package structure, wherein the package module is used to combine the substrate and the wire rack together. Multiple light emitting diodes are disposed in an array form on the substrate. The substrate is made of metallic material. The light-emitting diodes and the wire rack are electrically connected together. The mask and the package module are sealed together. When the light-emitting diodes are driven by the power supply, the heat generated by the light-emitting diodes can be absorbed by the substrate and then directly discharged. The array type light-emitting diode can flexibly adjust the array density according to different locations. The present invention has a simple structure, easy manufacturing process, and can significantly reduce manufacturing costs and time.

Description

201128763 六、發明說明: 【發明所屬之技術領域】 本發明係有關-種多層式陣列型發光二極體之封裝結 構,尤其是—種結構精簡且製造容易,可大幅減少製造i本 及製造時間之封裝結構。 【先前技術】201128763 VI. Description of the Invention: [Technical Field] The present invention relates to a package structure of a multilayer array type light-emitting diode, in particular, a structure is simple and easy to manufacture, and the manufacturing time and manufacturing time can be greatly reduced. The package structure. [Prior Art]

按,LED的發光原理是利用半導體固有特性,它不同於以 往的白熾燈管的放電、發熱發光顧,而是將電流順向流入 半導體的PN接面時便會發出光線,所以LED被稱為冷光源 (col(^ light)。由於LED系具有高耐久性、壽命長、輕巧、 耗電量低且不含水銀等有害物料之優點,故可廣泛應用於 照明設備產業巾,且其通細LED _封裝方式應用在電子 看板、交通號志等領域。 習知之LED 裝陣列系包括複數個LED,且每一個led择 而 之 =具有安m雜上,域由-封裝膠體包i 曰曰片及部份導線架,使導線架之金屬引腳露出封膠體之外 作為對外接點;在組裝成LED陣列時,其系將複數個 =引腳安裝至-印刷電路板之金屬聯機上,以藉此使該等 ED相互電性連接。但此種LED封裝陣_艮於該㈣結構 身之封裝尺寸,導致體積無法限縮;且因每一 led之散熱 途徑习僅能透過金屬引腳而已’散熱效果有限。 習知另有—種LED封裝_系將複數個㈣晶 進行封裝。詳言之,在印刷電路板上設有與 a曰标互對應之金屬聯機層,將該等⑽晶片直接 印刷電路板上,並與該金屬聯機層形成電性連接;最 201128763 即可完成 後再利用—封裝賴包覆印刷電路板上之各元件, 一 LED封裝陣列。According to the principle of LED illumination, it is different from the inherent characteristics of semiconductors. It is different from the discharge and heat generation of incandescent lamps in the past. Instead, it will emit light when the current flows in the PN junction of the semiconductor, so the LED is called Cold light source (col(^ light). Because LED has high durability, long life, light weight, low power consumption and no harmful materials such as mercury, it can be widely used in lighting equipment industrial towel, and its fine The LED _ package method is applied in the fields of electronic signage, traffic signs, etc. The conventional LED package array includes a plurality of LEDs, and each of the LEDs is selected to have an ampere, and the domain is encapsulated by a package. And a part of the lead frame, so that the metal pin of the lead frame is exposed outside the sealing body as an external contact; when assembled into an LED array, the plurality of = pins are mounted on the metal of the printed circuit board to Thereby, the EDs are electrically connected to each other. However, such an LED package array 艮 艮 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该'heat radiation It is also known that the LED package _ is to package a plurality of (four) crystals. In detail, a metal interconnection layer corresponding to the a 曰 mark is provided on the printed circuit board, and the (10) wafer is directly printed on the circuit. The board is electrically connected to the metal wiring layer; the most used 201128763 can be reused and packaged - the package covers the components on the printed circuit board, an LED package array.

用/祕Π敏缺點為作為LED基板用的印刷電路板使 ^足’因電路板上之線路圖案已被定形,若依據每 :應用場所訂製婦合之電路板,亦使得成本提高且耗時號 ’並且印刷電路板散紐果有限,因此續外加散熱裝置 幫助散熱’連帶使得成本增加’也使得結構更為龐大,因此 業界需要-種結構輕薄短小,但製造料且兼具有使用上彈 性之-種多層式陣卿發光二鋪之封裝結構。 【發明内容】 本發明的主要目的在於提供一種多層式陣列型發光二極 體丄該多層式陣列型發光二極體之係為多層式結構,其結構 精簡且製造料’因此可大幅減少製造成本及製造時間,其 中基板之材質為金屬材質’因此基板具有金顧異之熱傳導 性,可有效排散發光二極體之熱能。 本發明的另一目的在於提供一種多層式陣列型發光二極 體,該發光二極體晶粒以陣列方式配置於基板上,如此可依 據應用場合來調絲發^二極體晶粒之密集度,又該發光二 極體晶粒藉由導線與導線架形成雜連接,如此即使數顆發 光二極體晶粒損壞,亦不影響對整體發光亮度及效率。 本發明具體之技術手段包含有一基板,該基板至少具有 一出光區及兩導線架容置槽,該出光區係為該基板之中間區 塊,該兩導線架容置槽係相連於該出光區之前後側區塊,沿 該兩導線架容置槽下方板體之外側底緣處形成有兩呈間隔設 置之凹槽,而相鄰於該出光區之左、右側邊區塊設置有至少 201128763 一第一固定孔及至少一穿孔,該第一固定孔之内壁面形成有 • 一凸緣;一封裝模塊,其係以一射出成型方式形成於該基板 -周圍,該封裝模塊高於該出光區之表面之部份定義成一上封 裝模塊,該上封裝模塊底面之前後兩側向下形成有兩凸板, 該兩凸板之配置位置及形狀相對應於該導線架容置槽,該兩 凸板之長度至少大於該導線架容置槽之最長長度,該兩凸板 超出於該導線架容置槽之部份並向下延設有一第一凸部,該 第二凸部底端向内平行延設有兩突塊,該兩突塊之配置位置 • 及形狀相對應於該兩凹槽,該上封裝模塊底面在相對應於該 第-固定孔處皆形成有—第二凸部,該第二凸部對應於該凸 緣之位置則形成有一凹緣,又該上封裝模塊具有一頂面、一 第-内壁面及i定面’該頂面位於該上封裝概最外側之 頂4上’該第-内壁面係垂直於該頂面及該固定面,該第一 •内壁面之底邊係水平連接於該固定面,該固定面並設有__後 合^;-導線架’該導線架係被封設於該凸板内,該導線架 最靠近該出光區-側之部份為—内連接區,稱線架最遠離 # 於°亥出光區側之部份為一外連接區,該内連接區及該外連 接區之間設有至少—第二卡合槽及至少—第二固定孔,該第 二卡合槽無第二固定孔皆包埋於該封賴塊内,該内連接 區之上方及該外連接區整體外露於該封裝模塊,該外連接區 $有複數連接孔,該外連接區至少須超出該基板之周緣;一 -體該罩體可罩蓋於該封裝模塊上以保護包覆將該發光單 2女1體之底周緣向外延設有一延伸座,該延伸座之底面 二本嵌合部相對應於該嵌合槽;—發光單元, 設置於該出光區之表面,該發光單元包含有複 X 一極體曰曰粒’該等發光二極體晶粒與該兩導線架藉複 201128763 數導線構成-電性連接;-保護層,該保護層係包覆該等發 光二極體晶粒,·以及至少光層,該螢光層位於該保護層 上方。 【實施方式】 以下配合圖示及元件符號對本發明之實施方式做更詳細 的說明,俾使熟習該項技藝者在研讀本說明書後能據以實施。 一參閱第-®,本發明之多層式陣列型發光二極體之外觀 示思圖,參閱第一圖,本發明之多層式陣列型發光二極體之 部份構件之分解示意圖,參閱第三圖,本伽之多層式陣列 型發光二極體之俯意圖。本發明係有關—種多層式陣 型發光二極體,其包含有—基板卜—封裝模塊3、兩導線架 5及-罩體1〇,該基板1至少具有一出光區u及兩導線架容 置槽13該出光區11係為該基板1之中間區塊,該出光區 11之環周邊設有-第-卡合縫19,該兩導線架容置槽13係 相連於該出光區11之前後側區塊,該兩導線架容置槽13下 方板體之外緣底侧處形成有兩呈間隔設置之凹槽131,該兩 凹槽131概呈-長方型或其他適#形狀,而相鄰於該出光區 11之左、右側邊區塊設置有至少一第一固定孔15及至少一 穿孔17 ’該第-固定孔15之内壁面形成有—凸緣151,或者 亦了如本實%方式所示,在左、右側邊之區塊各設置有一個 第固疋孔15及兩個穿孔17,兩穿孔17可設置於第一固 疋孔15之兩側或該基板1之端角處。其中該基板1之材質可 以疋一銅、鋁、銅合金、鋁合金或其他適當金屬材。該基板 1之表面可進一步電鍍一導熱反光層(圖面未顯示),該導熱 反光廣之材質可以是-鎳、—把一白金、—銀、一白金合 201128763 金或其他適當材質。 參_三圖’本發明之紐、封賴塊及輕之斷面示 思圖’參閱第四圖,第四圖為第一圖之斷面示意圖。該封裝 模塊3係以—射出成型方式形成於該基板1顺,以使該^ 裝模塊3緊固地與$基板丨相結合,該縣模塊5之材質為 -環氧樹脂(Epoxy)或其他適當㈣,該封裝模塊3高於該 出光區11上表面之部份定義成一上封裝模塊31,要注意的 是’該上封賴塊31只是為了方便贿本實财式所定義 φ 來’並非獨立於該封裝模塊3的構件。 該上封裝模塊31底面之前後兩側向下形成有兩凸板 311,該兩凸板311之配置位置及形狀相對應於該導線架容置 # I3,該兩凸板311之長度至少大於該導線架容置槽U之 最長長度,該兩凸板311超出於該導線架容置槽13之部份並 ..向下延設有-第-凸部3111,該第一凸部3111底端向内平 行延設有兩突塊3111a,該兩突塊犯化之配置位置及形狀 相對應於該兩凹槽131 ’該上封錢塊31底面在相對應於該 φ 第一固定孔15處皆形成有—第二凸部33,該第二凸部33在 對應於該凸緣151之位置則形成有一凹緣Mi。 請再參閱第四圖,該凸板311内包埋有該導線架5,該導 線架5最靠近該出光區11 一侧之部份為一内連接區,該導線 架5最遠離機出光區U -側之部份為—外連接區,該外連 接區至少騎出該基板1之職,料連接區並設有複數連 接孔53 ’該内連接區及該外連接區之間設有至少一第二固定 孔51及至少-第二卡合縫51a,或如本實施方式可在該第二 固定孔51兩側各設置有該第二卡合縫51a,並設置有三個第 二固定孔51及兩連接孔53 ’因此該第二目定孔51與該第二 201128763 卡合縫51a會包埋於該封裝模塊3内,而該内連接區之上方 及该外連接區整體不包埋於該封裝模塊3,該導線架5之上 表面至少不低於或平行於該出光區u之表面。要注意的是, 上述該第二固定孔51與兩連接孔53之配置數量及位置係視 實際需求而定,在此僅是說明用的實例而已,並非用以限制 本發明的範圍。第六圖為導線架之另一實施結構。 參閱第三圖及第四圖所示,該封裝模塊3在射出成型時, 就會把基板1之第一*^合縫19、凹槽131、第一固定孔15 • 及導線架容置槽丨3都填滿,因此封裝模塊3之突塊3111a 與兩凹槽131以及該凸緣151與該凹緣331會互相卡合,同 時該封裝模塊3之封裝材料3也填滿了該導線架5之第二卡 合縫51 a及該第二固定孔51之空心部分,藉使得該封裝模塊 3與該基板1及該導線架5緊密地結合成一體。其中該第一 •卡合縫19及該第二卡合縫51a之斷面形狀可以是V型或其他 適當形狀。 ' 該上封裝模塊31具有一頂面33、一第一内壁面331及一 馨 固定面3311,該頂面33位於該上封裝模塊31最外側之頂部 上,該第一内壁面331係垂直於該頂面33及該固定面3311, 該第一内壁面331之底邊係水平連接於該固定面3311,該固 定面3311並設有一罩體嵌合槽3311a,該罩體嵌合槽33Ua 之斷面呈V型、凹型、ϋ型或其他適當形狀。 參閱第五圖,本發明之多層式陣列型發光二極體之俯面 不意圖,並配合第三圖所示。該出光區u之上表面並設置有 -發光單it 7 ’該發光單元7設置於該出光區u之表面,該 發光單元7包含有複數發光二極體晶粒71,該等發光二極體 晶粒71與該兩導線架藉複數導線w構成一電性連接以形成 201128763 ;電路,其中鮮發光二極體晶粒71細㈣ 當排列方式配置於該出光區u之上,欢 /、他乙 71 I*且古绍絡仅咳®。 光一才亟體晶粒 71上具有-絕緣保縣8,該絕緣保護層8 二,71 ’該絕緣保護層8之材質為-卿 材貝,該絕緣保遵層8上具有至少—榮光層9,該榮光層8 之材質為一碟光劑或其他適當材質。 曰The disadvantage of using/secret sensitive is that the printed circuit board used as the LED substrate can be shaped because the circuit pattern on the circuit board has been shaped, and if the circuit board is customized according to the application site, the cost is increased and consumed. The time code 'and the printed circuit board has a limited number of scatterers, so the addition of a heat sink to help dissipate the heat to 'crow the cost increases' also makes the structure even larger. Therefore, the industry needs a light and short structure, but it has both materials and use. Elasticity - a multi-layered array of LED light-emitting two-package structure. SUMMARY OF THE INVENTION The main object of the present invention is to provide a multi-layer array type light-emitting diode, which is a multi-layer structure, which has a compact structure and manufactures materials, thereby greatly reducing manufacturing costs. And the manufacturing time, wherein the material of the substrate is made of metal material. Therefore, the substrate has a thermal conductivity of gold, which can effectively dissipate the heat energy of the light-emitting diode. Another object of the present invention is to provide a multi-layer array type light-emitting diode, wherein the light-emitting diode crystal grains are arranged on the substrate in an array manner, so that the density of the diodes can be adjusted according to the application. Moreover, the light-emitting diode die is connected to the lead frame by wires, so that even if several light-emitting diodes are damaged, the brightness and efficiency of the overall light-emitting are not affected. The specific technical means of the present invention comprises a substrate having at least one light-emitting area and two lead frame receiving grooves, wherein the light-emitting area is an intermediate block of the substrate, and the two lead frame receiving grooves are connected to the light-emitting area. In the front rear side block, two spaced-apart grooves are formed along the outer bottom edge of the lower plate body of the two lead frame receiving grooves, and the left and right side blocks adjacent to the light exiting area are provided with at least 201128763. a first fixing hole and at least one through hole, wherein the inner wall surface of the first fixing hole is formed with a flange; a package module is formed in an injection molding manner around the substrate, and the package module is higher than the light exiting area A part of the surface is defined as an upper package module, and two convex plates are formed on the front and rear sides of the bottom surface of the upper package module, and the positions and shapes of the two convex plates are corresponding to the lead frame receiving grooves, and the two convex portions The length of the plate is at least greater than the longest length of the lead frame receiving groove, and the two convex plates extend beyond the portion of the lead frame receiving groove and extend downwardly with a first convex portion, and the bottom end of the second convex portion is inward Parallel extension a second protrusion is formed on the bottom surface of the upper package module corresponding to the first fixing hole, and the second protrusion corresponds to the two recesses. a recessed edge is formed at the position of the flange, and the upper package module has a top surface, a first inner wall surface and an i-shaped surface. The top surface is located on the top 4 of the outermost package of the upper package. The inner wall surface is perpendicular to the top surface and the fixing surface, and the bottom edge of the first inner wall surface is horizontally connected to the fixing surface, and the fixing surface is provided with a __ rear joint; the lead frame is the lead frame The portion of the lead frame closest to the light exiting region-side is an inner connecting region, and the portion of the wire rack that is farthest from the side of the light exiting region is an outer connecting region. Between the inner connecting portion and the outer connecting portion, at least a second engaging groove and at least a second fixing hole are disposed, and the second engaging groove is not embedded in the sealing block. The upper part of the connection area and the outer connection area are entirely exposed to the package module, and the outer connection area has a plurality of connection holes, and the outer connection area is The outer cover of the extending base is provided on the bottom of the bottom of the base of the light-emitting unit 2 The light-emitting unit is disposed on the surface of the light-emitting area, and the light-emitting unit includes a plurality of X-pole particles and the light-emitting diode chips and the two lead frames. By means of the 201128763 number of wires forming an electrical connection; a protective layer covering the light-emitting diode grains, and at least a light layer, the phosphor layer being located above the protective layer. [Embodiment] The embodiments of the present invention will be described in more detail below with reference to the drawings and the reference numerals, and can be implemented by those skilled in the art after studying this specification. Referring to the first--, the appearance of the multilayer array type light-emitting diode of the present invention, referring to the first figure, an exploded view of a part of the multi-layer array type light-emitting diode of the present invention, see the third Fig., the intention of the multi-layer array type light-emitting diode of Benga. The invention relates to a multi-layer array type light-emitting diode, which comprises a substrate-package module 3, two lead frames 5 and a cover body 1 . The substrate 1 has at least one light-emitting area u and two lead frames. The light-emitting area 11 is the middle block of the substrate 1. The ring-shaped periphery of the light-emitting area 11 is provided with a first-to-engagement slot 19, and the two lead frame receiving grooves 13 are connected to the light-emitting area 11. In the front and rear side blocks, two spaced-apart grooves 131 are formed at the bottom side of the outer edge of the plate body below the two lead frame receiving grooves 13, and the two grooves 131 are generally rectangular-shaped or other suitable shapes. The left and right side blocks adjacent to the light exiting area 11 are provided with at least one first fixing hole 15 and at least one through hole 17'. The inner wall surface of the first fixing hole 15 is formed with a flange 151, or As shown in the real % mode, each of the blocks on the left and right sides is provided with a first fixing hole 15 and two through holes 17, and the two through holes 17 may be disposed on both sides of the first fixing hole 15 or at the end of the substrate 1. Corner. The material of the substrate 1 may be a copper, aluminum, copper alloy, aluminum alloy or other suitable metal material. The surface of the substrate 1 may be further plated with a thermal reflective layer (not shown), and the material of the thermally conductive reflective material may be - nickel, - a platinum, silver, a white gold, 201128763 gold or other suitable material. Refer to the fourth figure, and the fourth figure is a schematic cross-sectional view of the first figure. The package module 3 is formed on the substrate 1 in an injection molding manner, so that the package module 3 is firmly combined with the substrate ,. The material of the county module 5 is epoxy resin (Epoxy) or the like. Appropriately (4), the portion of the package module 3 higher than the upper surface of the light exiting area 11 is defined as an upper package module 31. It should be noted that 'the upper block 31 is only for the convenience of bribes defined by the real money formula' Independent of the components of the package module 3. Two convex plates 311 are formed on the front and rear sides of the bottom surface of the upper package module 31. The positions and shapes of the two convex plates 311 are corresponding to the lead frame receiving #I3, and the length of the two convex plates 311 is at least larger than the length. The longest length of the lead frame accommodating groove U, the two convex plates 311 are beyond the portion of the lead frame receiving groove 13 and the lower portion is provided with a - convex portion 3111, and the bottom end of the first convex portion 3111 Two protrusions 3111a are arranged in parallel inwardly, and the positions and shapes of the two protrusions are corresponding to the two grooves 131'. The bottom surface of the upper sealing block 31 corresponds to the first fixing hole 15 of the φ. A second convex portion 33 is formed, and the second convex portion 33 is formed with a concave edge Mi at a position corresponding to the flange 151. Referring to the fourth figure, the lead frame 311 is embedded in the lead frame 311. The portion of the lead frame 5 closest to the side of the light exiting area 11 is an inner connecting area, and the lead frame 5 is farthest from the machine exit area. The U-side portion is an outer connection region, and the outer connection region rides at least the position of the substrate 1, and the material connection region is provided with a plurality of connection holes 53'. The inner connection region and the outer connection region are provided with at least a second fixing hole 51 and at least a second fastening hole 51a, or two second fastening holes 51a are respectively disposed on both sides of the second fixing hole 51, and three second fixing holes are provided. 51 and the two connecting holes 53 ′′, the second positioning hole 51 and the second 201128763 engaging slit 51 a are embedded in the package module 3 , and the upper part of the inner connecting area and the outer connecting area are not embedded as a whole. In the package module 3, the upper surface of the lead frame 5 is at least not lower than or parallel to the surface of the light exiting region u. It should be noted that the number and position of the second fixing hole 51 and the two connecting holes 53 are determined according to actual needs, and are merely illustrative examples and are not intended to limit the scope of the present invention. The sixth figure shows another implementation structure of the lead frame. Referring to the third and fourth figures, when the package module 3 is injection molded, the first joint 19 of the substrate 1, the groove 131, the first fixing hole 15 and the lead frame receiving groove are arranged. The 丨3 is filled, so that the protrusion 3111a of the package module 3 and the two grooves 131 and the flange 151 and the concave edge 331 are engaged with each other, and the packaging material 3 of the package module 3 also fills the lead frame. The second engaging seam 51 a and the hollow portion of the second fixing hole 51 are such that the package module 3 is tightly integrated with the substrate 1 and the lead frame 5 . The cross-sectional shape of the first engaging seam 19 and the second engaging slit 51a may be V-shaped or other suitable shape. The upper package module 31 has a top surface 33, a first inner wall surface 331 and a sweetening surface 3311. The top surface 33 is located on the outermost top of the upper package module 31. The first inner wall surface 331 is perpendicular to The top surface 33 and the fixing surface 3311, the bottom edge of the first inner wall surface 331 is horizontally connected to the fixing surface 3311, and the fixing surface 3311 is provided with a cover fitting groove 3311a, and the cover fitting groove 33Ua The section is V-shaped, concave, ϋ-shaped or other suitable shape. Referring to the fifth drawing, the planar surface of the multilayer array type light-emitting diode of the present invention is not intended to be used in conjunction with the third figure. The light-emitting unit 7 is disposed on the surface of the light-emitting area u and is provided with a light-emitting unit 7 that is disposed on the surface of the light-emitting area u. The light-emitting unit 7 includes a plurality of light-emitting diode crystal grains 71, and the light-emitting diodes The die 71 and the two lead frames are electrically connected by a plurality of wires w to form a 201128763 circuit, wherein the fresh light emitting diode die 71 is fine (4) when arranged in an arrangement above the light exiting region u, B 71 I* and Gu Shaoluo only cough®. The light-incorporating body 101 has an insulating-insulated Baoxian 8, and the insulating protective layer 8 is second, 71'. The insulating protective layer 8 is made of - Qingyuanbei, and the insulating layer 8 has at least a glory layer 9 The material of the glory layer 8 is a dish of light or other suitable material.曰

該罩體10以射出成形方式直接與該封裝模塊 護包容該發光單元7哪體1G之底周緣向外延設有-延^ 座101 ’;該延伸座m之底面設有一嵌合部1〇11,該嵌合部 1011之没置位置相對應於該罩體嵌合槽33lia,該延伸座⑻ t長度至少不小於該上封裝模塊31之該第一内壁面331 。、長度。其中鮮體10之材f為—娜材纽具有可透光 罩體10之該嵌合部咖對準於該罩體嵌合槽嶋 ^可相互結合,血麵伸座⑻端綱時緊密面合於該 内壁面33卜使彳于該罩體1Q翻地岐於該封裝模塊3 該兩導線架5之連接孔53可分別引接電源導線(圖面未 顯不)’當施加一偏麼時’該等發光二極體晶粒71則受電源 ,動發光該等發光—極體晶粒71以陣觸列方式之發光方 式具有高亮度之發光·,#絲光線穿螢光層9產生 有混光之效果。 以上所述者僅為用以轉本發明之較佳實施例,並非企 ^據以對本發義任何形式上之_,是以,凡有在相同之 精神下所作有關本發明之任何修飾或變更,皆仍應包括 在本發明意圖保護之範疇。 201128763 【圖式簡單說明】 觀 第一圖為顯示本發明之多層式陣列型發光二極 示意圖。 題之外 件之 第-圖本發明之多層請卿發光二極體之部 分解示意圖。 ”孬 第三圖為顯示本發明之基板、封裝模塊及罩體之斷面示 意圖。 第四圖為第一圖之斷面示意圖。The cover body 10 is directly provided with the extension module 101' of the base portion of the body 1G of the light-emitting unit 7 in an injection molding manner; a fitting portion 1〇11 is provided on the bottom surface of the extension seat m. The position of the fitting portion 1011 is corresponding to the cover fitting groove 33lia, and the length of the extending seat (8) t is at least not less than the first inner wall surface 331 of the upper package module 31. ,length. The material f of the fresh body 10 is that the fitting part of the permeable member body 10 is aligned with the fitting groove 该 of the cover body, and the blood surface is extended (8). And the connection hole 53 of the two lead frames 5 of the package module 3 can be respectively connected to the power supply wire (the surface is not shown) when the inner wall surface 33 is turned over. The light-emitting diode crystal grains 71 are subjected to a power source, and the light-emitting elements of the light-emitting diodes 71 have a high-luminance light emission in a manner of illuminating the matrix, and the light-emitting layer 9 is generated. The effect of mixing light. The above description is only for the preferred embodiment of the present invention, and is not intended to be in any form of the present invention, and any modifications or changes relating to the present invention are made in the same spirit. All should still be included in the scope of the intention of the present invention. 201128763 [Simple description of the diagram] The first diagram is a schematic diagram showing the multilayer array type light-emitting diode of the present invention. The first part of the present invention is a schematic diagram of the decomposition of the multi-layered light-emitting diode of the present invention. The third drawing is a cross-sectional view showing the substrate, the package module and the cover of the present invention. The fourth figure is a schematic sectional view of the first figure.

第五圖為顯示本發明之多層式陣列型發光二極體之俯面 示意圖。 第六圖為顯示本發明之多層式陣列型發光二極體之導線 架另一實施結構。 【主要元件符號說明】 1基板 11出光區 13導線架容置槽 131凹槽 15第一固定孔 151凸緣 17穿孔 19第—合槽 3封裝模塊 31上封裝模塊 311凸板 3111第一凸部 201128763 3111a兩突塊 33第二凸部 331凹緣 33頂面 331第一内壁面 3311固定面 3311a罩體嵌合槽 5導線架 51第二固定孔 51a第二卡合槽 53連接孔 10罩體 101延伸座 1011延伸座嵌合部 3311a罩體嵌合槽Fig. 5 is a schematic view showing the top surface of the multilayer array type light-emitting diode of the present invention. Fig. 6 is a view showing another embodiment of the lead frame of the multilayer array type light-emitting diode of the present invention. [Main component symbol description] 1 substrate 11 light-emitting area 13 lead frame accommodating groove 131 recess 15 first fixing hole 151 flange 17 through-hole 19 first-slot 3 package module 31 package module 311 convex plate 3111 first convex portion 201128763 3111a two protrusions 33 second convex portion 331 concave edge 33 top surface 331 first inner wall surface 3311 fixing surface 3311a cover fitting groove 5 lead frame 51 second fixing hole 51a second engaging groove 53 connecting hole 10 cover 101 extension seat 1011 extension seat fitting portion 3311a cover body fitting groove

Claims (1)

201128763 .七、申請專利範圍: 1. 一種多層式陣列型發光二極體,係包含·· 了基板’該基板至少具有—出光區及兩導_容置槽,該出光區 ^為該基板之巾㈣塊’該兩導線架容置槽係相連於該出光區之 則後側區塊’該兩導線架容置槽下方板體之外緣底m形成有兩 呈間隔設置之凹槽,而相鄰於該出光區之左、右側邊區塊設置有 至少-第定孔及至少—穿孔,該第—固定孔之内壁面形成有 一凸緣; •:封,模塊,其係以一射出成型方式形成於該基板周圍,該封裝 ^塊向於該出光區之表面之部份定義成—上封賴塊,該上封裝 模塊底面之前後兩側向下形成有兩凸板,該兩凸板之配置位置及 形,相對應於該導線架容置槽,該兩凸板之長度至少大於該導線 架I置槽之最長長度,該兩凸板超出於該導線架容置槽之部份並 向下延叹有一第一凸部,該第一凸部底端向内平行延設有兩突 塊’該兩突塊之配置位置及形狀相對應於該兩凹槽,該上封襄模 塊底面在相對應於該第一固定孔處皆形成有一第二凸部,該第二 #凸部對應於該凸緣之位置_成有—凹緣,又該上封裝模塊具有 -頂面…第-内壁面及―固定面,該頂面位於該上封裝模塊最 外側之頂部上’該第—内壁面健直於該頂面及該固定面,該第 -内壁面之底邊係水平連接⑽固定面,該固定面並設有一嵌合 槽; :導線架’該導_魏包埋_凸_,料雜最靠近該出 光區-侧之部份為-魄接區,該導線架最遠離於該出光區一側 之伤為外連接區,§亥内連接區及該夕卜連接區之間設有至少一 第二卡合槽及至少-第二固定孔,該第二卡合槽與該第二固定孔 12 201128763 、皆包埋機封裝模塊内’該内連接區之上方及該外連接區整體外 露於該封麵塊’料連接區至賴超崎基板之周緣; -罩體’料财罩該雌觀切賴包鶴該發光單 兀2罩體之底周緣向外延設有一延伸座,該延伸座之底面設有 一嵌合部,該嵌合部相對應於該嵌合槽; ^光早7C ’該魏單元係設置於該出光區之表面,該發光單元 複數發^鐘晶粒,轉發光二極體晶粒與該兩導線架 藉複數導線構成一電性連接; 參、,緣保漢層’該絕緣保護層係包覆該等發光二極體晶粒;以及 至少一螢光層,該螢光層位於該絕緣保護層上方。 依據申明專利範圍第1項所述之一種多層式陣列型發光二極 體,其中該兩凹槽呈一長方型。 依據申叫專利範圍第1項所述之一種多層式陣列型發光二極 艟其中该基板之材質可以是一鋼、一鋁、一銅合金斌一鋁合金 之至少其中之一。 Φ 4_依據申請專利範圍第1項所述之一種多層式陣列型發光二極 體,其中該出光區之周邊係設有—第一__合槽。 5.依據申請專利範圍第4項所述之一種多層式陣列型發光二極 體,其中該第一卡合槽之斷面係呈一V型、一凹型或一U型之至 少其中之—。 6·依據申請專利範圍第1項所述之一種多層式陣列型發光二極 體其中該第二卡合槽之斷面係呈一v型、一凹型或一u型之至 少其中之一。 1 13 201128763 7. 依據申請專利細第丨項所述之—财層式陣卿發光二極 體,其中該基板之表面進一步設有一導熱反光層,該導熱反光層 之材質至少包含有-鎳、―纪一白金、—銀或—白金合金之至 少其中之一。 8. 依據申吻專利範圍第1項戶斤述之一種多層式陣列型發光二極 體,其中該外連接區設有複數連接孔。 9. 依據申請專利範圍第i項所狀一種多層式陣列型發光二極 體,其中該罩體嵌合槽之斷面呈一 V型、一凹型或一 1]型之至少 鲁.其中之一。 10·依據申請專利範圍第1項所述之-種多層式陣列型發光二極 體’其中該延伸座間之長度至少不小於該上封裝模塊之該第一内 壁面間的長度。 U·依據申4專利範圍第1項所述之—種多層式陣列型發光二極 一 ’、中該專發光一極體晶粒係以陣列排列配置於該出光區之表 面。 • 12.依據申請專利範圍第1項所述之-種多層式陣列型發光二極 體其中該絕緣保護層之材質為一矽膠。 依據申„月專利範圍第i項所述之一種多層式陣列型發光二極 體’其中騎光層之材質為—磷絲卜 =·依據申請專利範圍第丨項所述之—種多層式陣列型發光二極 體,其中該罩體之材質為一石夕膠。 依據申請專利範圍第1項所述之-種多層式P車列型發光二極 體’其中該罩體具有可透光性。 16.依據申請專利範圍第1項所述之-種多層式陣列型發光二極 201128763 體之,其中該封裝模塊之材質為一環氧樹脂。201128763. Seven, the scope of application for patents: 1. A multi-layer array type light-emitting diode, comprising: a substrate 'the substrate has at least a light-emitting area and two-conducting-receiving grooves, and the light-emitting area is the substrate a towel (four) block, wherein the two lead frame receiving groove is connected to the rear side block of the light exiting area, and the bottom edge of the outer edge of the plate body of the two lead frame receiving groove is formed with two spaced grooves, and The left and right side blocks adjacent to the light exiting area are provided with at least a predetermined hole and at least a perforation, and an inner wall surface of the first fixing hole is formed with a flange; • a sealing module, which is formed in an injection molding manner Formed around the substrate, the portion of the package block facing the surface of the light exiting region is defined as an upper sealing block, and two convex plates are formed on the front and rear sides of the bottom surface of the upper package module, and the two convex plates are formed Configuring a position and a shape corresponding to the lead frame receiving groove, wherein the length of the two convex plates is at least greater than the longest length of the lead frame I, and the two convex plates are beyond a portion of the lead frame receiving groove and The lower sigh has a first convex portion, and the bottom end of the first convex portion The two protrusions are disposed in parallel with each other, and the two protrusions are disposed corresponding to the two grooves. The bottom surface of the upper sealing module is formed with a second protrusion corresponding to the first fixing hole. The second # convex portion corresponds to the position of the flange _ forming a concave edge, and the upper package module has a top surface ... an inner wall surface and a "fixing surface", the top surface is located at the outermost side of the upper package module The top surface of the first inner wall is directly connected to the top surface and the fixing surface, and the bottom edge of the first inner wall surface is horizontally connected (10) to the fixing surface, and the fixing surface is provided with a fitting groove; Wei-embedded_convex_, the part of the material closest to the light-emitting area-side is a splicing area, and the damage of the lead frame farthest from the side of the light-emitting area is an outer connecting area, the inner connecting area and the At least one second engaging groove and at least a second fixing hole are disposed between the connecting areas, and the second engaging hole and the second fixing hole 12 201128763 are both embedded in the package module The upper portion and the outer connecting region are entirely exposed on the periphery of the cover block 'material connection area to the Lai Chaosaki substrate; - a cover of the cover of the cover of the cover of the light-emitting unit 2, the outer periphery of the cover of the light-emitting unit 2 is provided with an extension seat, and the bottom surface of the extension seat is provided with a fitting portion corresponding to the a mating slot; ^ 光早 7C 'the Wei unit is disposed on the surface of the light exiting region, the light emitting unit is plurally made of a clock crystal, and the light emitting diode die and the two lead frames are electrically connected by a plurality of wires The insulating layer protects the light-emitting diode crystal grains; and at least one phosphor layer, the phosphor layer is located above the insulating protective layer. A multilayer array type light emitting diode according to claim 1, wherein the two grooves have a rectangular shape. The multi-layer array type light-emitting diode according to claim 1, wherein the material of the substrate may be at least one of a steel, an aluminum, and a copper alloy. Φ 4_ The multi-layer array type light-emitting diode according to claim 1, wherein the periphery of the light-emitting region is provided with a first-slot. 5. A multilayer array type light-emitting diode according to claim 4, wherein the first engaging groove has a cross section of at least one of a V shape, a concave shape and a U shape. The multi-layer array type light-emitting diode according to claim 1, wherein the second engaging groove has a cross section of at least one of a v-shape, a concave shape and a u-type. 1 13 201128763 7. The material of the substrate is further provided with a thermally conductive reflective layer, wherein the material of the thermally reflective layer comprises at least nickel-nickel, according to the patent application specification. - at least one of Jiyi Platinum, - Silver or - Platinum Alloy. 8. A multi-layer array type light-emitting diode according to the first aspect of the patent application scope, wherein the outer connecting region is provided with a plurality of connecting holes. 9. A multi-layer array type light-emitting diode according to the scope of claim 1, wherein the cover fitting groove has a V-shaped, a concave or a 1] type. . 10. The multi-layer array type light-emitting diode according to claim 1, wherein the length between the extensions is at least not less than the length between the first inner wall surfaces of the upper package module. U. The multi-layer array type light-emitting diodes according to the first aspect of claim 4, wherein the specific light-emitting diodes are arranged in an array on the surface of the light-emitting region. 12. The multi-layer array type light-emitting diode according to claim 1, wherein the insulating protective layer is made of a silicone. A multi-layer array type light-emitting diode according to item ith of the patent application scope of the invention, wherein the material of the riding layer is - phosphorus wire = a multi-layer array according to the scope of the patent application The type of the light-emitting diode, wherein the cover is made of a light-transmissive material. The multi-layer P-type light-emitting diode according to the first aspect of the invention. 16. The multilayer array type light emitting diode 201128763 according to claim 1, wherein the package module is made of an epoxy resin. L I 15L I 15
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