JP2012182297A - Lead frame for led, led module, and manufacturing method thereof - Google Patents

Lead frame for led, led module, and manufacturing method thereof Download PDF

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JP2012182297A
JP2012182297A JP2011043997A JP2011043997A JP2012182297A JP 2012182297 A JP2012182297 A JP 2012182297A JP 2011043997 A JP2011043997 A JP 2011043997A JP 2011043997 A JP2011043997 A JP 2011043997A JP 2012182297 A JP2012182297 A JP 2012182297A
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lead
led
pad
lead frame
led chips
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Masashi Sawadaishi
将士 澤田石
Susumu Maniwa
進 馬庭
Junko Toda
順子 戸田
Takayuki Fukada
隆之 深田
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Toppan Inc
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Toppan Printing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame for an LED capable of increasing the number of LED chips to be mounted per unit area.SOLUTION: An LED module 1 includes lead frames in which a plurality of pad parts 6b arranged in a direction orthogonal to a pad base part and a plurality of lead parts 7b arranged in a direction orthogonal to a lead base are arranged alternately and in a non-contact manner, facing each other. A reflector 10 is molded by filling a filled resin between the pad parts 6b and the lead parts 7b and formed by the filled resin so as to enclose the plurality of the pad parts and the plurality of the lead parts. A plurality of LED chips 4 are connected in parallel by mounting them on the respective pad parts 6b in the longitudinal direction and connecting a metal wire which supplies electric power to the respective LED chips 4 to the lead parts 7b. The plurality of LED chips 4 and the metal wire in the reflector 10 are sealed by filling a transparent sealing resin.

Description

本発明は、LEDチップ(Light Emitting Diode)を搭載するLED用リードフレームとLED用リードフレーム基板、そしてLED用リードフレームを備えたLEDモジュール及びその製造方法に関する。   The present invention relates to an LED lead frame on which an LED chip (Light Emitting Diode) is mounted, an LED lead frame substrate, an LED module including the LED lead frame, and a manufacturing method thereof.

一般的に、ウエハープロセスで製造される半導体集積回路(LSI、IC)や発光ダイオード(LED:Light Emitting Diode)等の電子素子は、厚みが1mm以下で大きさも1cm程度以下と小さく、また電力を供給して電気信号を入出力するための微細な端子を備え、端子数は数十から数千に至る場合もある。 In general, an electronic element such as a semiconductor integrated circuit (LSI, IC) or a light emitting diode (LED) manufactured by a wafer process has a thickness of 1 mm or less and a size of about 1 cm 2 or less, and power. In some cases, the number of terminals may be from several tens to several thousand.

従って、これらの電子素子は、電子素子に形成された端子と同じピッチの端子を一方の面に有し、簡単で強固に外部装置に接続できる程度にまで拡大されたピッチの端子を他方の面に備える特別な基板に搭載して使用に供される。外部との電気接続は、この特別の基板の他方の面に形成された拡大されたピッチを有する端子を介してなされる。   Therefore, these electronic elements have terminals on one surface with terminals having the same pitch as the terminals formed on the electronic elements, and terminals on the other surface with pitches expanded to such an extent that they can be easily and firmly connected to an external device. It is mounted on a special board to prepare for use. Electrical connection to the outside is made through terminals having an enlarged pitch formed on the other surface of this special substrate.

ここで本発明に関する電子素子としてのLEDチップやSiダイオードは、例えば電力を印加するだけの、端子を2個有する2端子型の電子素子であり、端子数が数百にも及ぶLSIやICに較べると端子数は少なく、当該電子素子(LEDやSiダイオード)を搭載する基板のサイズの問題を度外視すれば微細配線形成に伴う困難はほとんどない。
従って、2端子のLEDチップを搭載する特別な基板としては、LSIやIC用に開発されたセラミック基板、プリント基板、リードフレーム等をほとんどそのままの形で利用することができる。
Here, the LED chip or the Si diode as the electronic element according to the present invention is, for example, a two-terminal type electronic element having only two terminals to which power is applied, and is suitable for LSIs and ICs having hundreds of terminals. In comparison, the number of terminals is small, and if the problem of the size of the substrate on which the electronic element (LED or Si diode) is mounted is not taken into consideration, there is almost no difficulty in forming fine wiring.
Therefore, as a special substrate on which a two-terminal LED chip is mounted, a ceramic substrate, printed circuit board, lead frame, or the like developed for LSI or IC can be used almost as it is.

セラミック基板は電気特性は良好であり、熱膨張率が低く信頼性も優秀であるが、価格が高いという欠点がある。また、セラミックは、熱伝導性が樹脂よりは勝るが金属よりは劣るので、LEDチップに生じた熱を放散するために、一定の厚みの金属からなる放熱板をLEDチップに接する形で備える必要があるため、薄くて軽くすることが難しいという問題もある。LEDチップを液晶表示装置のバックライトとして使用する場合には、薄く、更に望ましくは軽くすることが特に重要な因子である。  A ceramic substrate has good electrical characteristics, a low coefficient of thermal expansion and excellent reliability, but has a drawback of high price. In addition, ceramic has better thermal conductivity than resin but is inferior to metal. Therefore, in order to dissipate heat generated in the LED chip, it is necessary to provide a heat sink made of metal with a certain thickness in contact with the LED chip. There is also a problem that it is difficult to make it thin and light. When the LED chip is used as a backlight of a liquid crystal display device, it is a particularly important factor to make it thin and more preferably light.

また、2端子のLEDチップを搭載する電子素子搭載用の基板として、プリント基板を用いた場合には、プリント基板の基材であるエポキシ樹脂やガラスエポキシ樹脂が、セラミックや金属に較べると熱抵抗が高いという問題があり、それを解消するため、基板の内層にCu(銅)、あるいはAl(アルミ)等の金属板を挿入したプリント基板を採用せざるを得ない。
また、LEDチップから発せられた光を光源として効率よく利用するため、LEDチップから発せられた光を反射させ、その反射光を利用することも有るが、高光反射率を確保するために、LEDチップの背部の基板表面に光反射性のセラミックインクを塗布する工程を必要とし、いずれの処理も高価格化を伴うものである。
In addition, when a printed circuit board is used as a board for mounting an electronic element on which a two-terminal LED chip is mounted, the epoxy resin or glass epoxy resin that is the base material of the printed circuit board has a thermal resistance as compared with ceramic or metal. In order to solve this problem, a printed board in which a metal plate such as Cu (copper) or Al (aluminum) is inserted into the inner layer of the board must be employed.
In addition, in order to efficiently use the light emitted from the LED chip as a light source, the light emitted from the LED chip may be reflected and the reflected light may be used, but in order to ensure high light reflectance, the LED A process of applying a light-reflective ceramic ink to the substrate surface at the back of the chip is required, and both processes are expensive.

これに対し、電子素子搭載用に用いられるリードフレームは、多端子の電子素子の搭載には向かないが、板状の鉄−ニッケル等の合金薄板、銅−ニッケル−錫等の合金薄板からなるリードフレーム用金属材料を、塩化第二鉄等のエッチャントを用いてエッチング加工するか、金型による打ち抜き加工によって製造することが可能なため極めて廉価に得ることが出来る。  On the other hand, a lead frame used for mounting an electronic element is not suitable for mounting a multi-terminal electronic element, but is composed of a plate-shaped alloy thin plate such as iron-nickel or an alloy thin plate such as copper-nickel-tin. Since the lead frame metal material can be manufactured by etching using an etchant such as ferric chloride or by punching with a mold, it can be obtained at a very low cost.

一個のLEDチップを搭載するためのリードフレームとしては、計3個のアイランドを備えたものが知られている。このリードフレームは、LEDチップが搭載される主表面としてのパッド部(アイランド部)と、LEDチップと電気的接続をとるための、相互に電気的に絶縁されてパッド部(アイランド部)とも電気的に絶縁された二つのリード用アイランドとの計3個のアイランドを備えるものである。
また、一個のLEDチップを搭載するためのリードフレームとして、計2個のアイランドを備えたものも知られている。すなわち、パッド部と一方のリード用アイランドとを共通にした共通アイランドと、他方のリード用アイランドとの計2個のアイランドを備えるものである。
As a lead frame for mounting one LED chip, one having a total of three islands is known. The lead frame has a pad portion (island portion) as a main surface on which the LED chip is mounted, and is electrically insulated from the pad portion (island portion) for electrical connection with the LED chip. It comprises a total of three islands with two electrically isolated lead islands.
Further, a lead frame for mounting one LED chip is also known which has a total of two islands. That is, a total of two islands are provided: a common island in which the pad portion and one lead island are shared, and the other lead island.

図7に示すLEDモジュール40は、2個のアイランドを有するリードフレーム41を使用した一例の断面図である。リードフレーム41のパッド部41aには、その主表面側にLEDチップ44が搭載され、その裏面はLEDチップ44から発生するジュール熱を外部に放散させる。なお、裏面には放熱効率を高めるための放熱板が装着されていてもよい。また、下記特許文献1〜4には、LED等の電子素子を担持体へ搭載する技術、蓄熱を防止するための放熱技術が記載されている。
LEDチップ44は、LEDチップ搭載部と一体となった一方の電極であるパッド部41a上に固定され且つ金属ワイヤー45により電気的に接続されており、他方の電極となるリード用アイランド41bとは別の金属ワイヤー45で電気的に接続されている。
The LED module 40 shown in FIG. 7 is a cross-sectional view of an example using a lead frame 41 having two islands. The LED chip 44 is mounted on the main surface side of the pad portion 41a of the lead frame 41, and the back surface of the lead frame 41 dissipates Joule heat generated from the LED chip 44 to the outside. In addition, the heat sink for improving heat dissipation efficiency may be attached to the back surface. Patent Documents 1 to 4 below describe a technique for mounting an electronic element such as an LED on a carrier, and a heat dissipation technique for preventing heat storage.
The LED chip 44 is fixed on the pad portion 41a, which is one electrode integrated with the LED chip mounting portion, and is electrically connected by a metal wire 45. What is the lead island 41b that is the other electrode? It is electrically connected by another metal wire 45.

また、LEDチップ44を囲んで傾斜する樹脂を有するリフレクター43がリードフレーム41の上に形成され、リフレクター43の内部はLEDチップ44と金属ワイヤー45を覆うように封止樹脂46が充填されている。リフレクター43の内側には金属膜などからなる反射膜48が形成されることもある。リードフレーム41を構成する二つのアイランド41a、41bは、短絡しないようにスリット42により分離され充填用絶縁樹脂49が充填されている。
リードフレーム41は、図7から理解できるように、金属部分だけに着目すれば互いに絶縁された複数の板状の金属片からなるアイランド41a、41bで構成されている。
In addition, a reflector 43 having an inclined resin surrounding the LED chip 44 is formed on the lead frame 41, and the inside of the reflector 43 is filled with a sealing resin 46 so as to cover the LED chip 44 and the metal wire 45. . A reflective film 48 made of a metal film or the like may be formed inside the reflector 43. The two islands 41a and 41b constituting the lead frame 41 are separated by a slit 42 and filled with a filling insulating resin 49 so as not to be short-circuited.
As can be understood from FIG. 7, the lead frame 41 is configured by islands 41 a and 41 b made of a plurality of plate-shaped metal pieces that are insulated from each other when attention is paid only to the metal portion.

ところで、LEDチップ44は単体で使用される以外に、発光量(発光密度)を増やしたり、発光色の調整のために複数のLEDチップを平面的に近接して複数並べて使用したい場合がある。特に、液晶表示装置用のバックライトとしては、光強度が強くなるように複数個のLEDチップを面状に配列して備えた、軽くて薄い光源が特に求められている。
LEDチップを照明光源として用いたLED電球では、40〜50個のLEDチップ(素子)を同時に点灯させることで白熱電球等と置き換えることができ、しかもこれら白熱電球等と比較して消費電力を著しく低減できて省エネ効果が高いことが知られている。
By the way, in addition to the LED chip 44 being used alone, there are cases where it is desired to increase the amount of light emission (light emission density) or to arrange a plurality of LED chips close to each other in order to adjust the emission color. In particular, as a backlight for a liquid crystal display device, a light and thin light source having a plurality of LED chips arranged in a planar shape so as to increase the light intensity is particularly required.
An LED bulb using an LED chip as an illumination light source can be replaced with an incandescent bulb by simultaneously lighting 40 to 50 LED chips (elements), and the power consumption is significantly higher than that of the incandescent bulb. It is known that the energy saving effect can be reduced.

特開2003−347600号公報JP 2003-347600 A 特開2004−172160号公報JP 2004-172160 A 特開2007−220925号公報JP 2007-220925 A 特開2003−8071号公報JP 2003-8071 A

しかしながら、従来、LED電球を製造する場合、例えば図8に示すように単体のリードフレーム41を多数個連接し、各リードフレーム41上に1または2個のLEDチップ44を実装したものを用いている。LEDチップ44を複数個密集させる場合には、通常は図7に示したような個別に樹脂充填と封止加工がされたLEDモジュール40、或いはさらにケーシング加工を施した1個のLEDモジュール40を縦横に複数個配列させて、図8に示すように一体化する構成を採用することがほとんどであった。   However, conventionally, when manufacturing an LED bulb, for example, as shown in FIG. 8, a plurality of single lead frames 41 are connected, and one or two LED chips 44 are mounted on each lead frame 41. Yes. When a plurality of LED chips 44 are densely packed, usually, an LED module 40 individually filled with resin and sealed as shown in FIG. 7 or a single LED module 40 further subjected to casing processing is used. In most cases, a configuration in which a plurality of elements are arranged vertically and horizontally and integrated as shown in FIG.

また、図8に示すLED電球用のリードフレームは、1つの基板に図7に示すような1つ(または2つ)のLEDモジュール40を実装したリードフレーム41となるため、リードフレーム41の裏面で複数のリードフレーム41同士をはんだ付けすることで複数のLEDチップ44の電球を接続した構造を採用せざるを得なかった。
この場合、発光に資するLEDチップ44の個数が複数のリードフレーム41の占有面積に対して少なくて嵩張るにも関わらず、発光密度が低いという問題がある。
8 is a lead frame 41 in which one (or two) LED modules 40 as shown in FIG. 7 are mounted on one substrate, and therefore the back surface of the lead frame 41. Thus, a structure in which the light bulbs of the plurality of LED chips 44 are connected by soldering the plurality of lead frames 41 to each other has to be adopted.
In this case, although the number of LED chips 44 contributing to light emission is small and bulky with respect to the occupied area of the plurality of lead frames 41, there is a problem that the light emission density is low.

本発明は、上述したような問題点に鑑みてなされたもので、単位面積当たりのLEDチップの搭載数を多くできるLED用リードフレーム及びLED用リードフレーム基板、LEDモジュール及びその製造方法を提供することである。   The present invention has been made in view of the above-described problems, and provides an LED lead frame, an LED lead frame substrate, an LED module, and a method for manufacturing the same that can increase the number of LED chips mounted per unit area. That is.

本発明によるLEDリードフレームは、パッド基部に対して交差する方向に延びて所定間隔で配列されたLEDチップ搭載用の1または複数のパッド部と、リード基部に対して交差する方向に延びて所定間隔で配列された1または複数のリード部とが、非接触で互い違いに配列されてなることを特徴とする。
本発明によるLED用リードフレームによれば、LEDチップを搭載するためのパッド部と金属ワイヤー等の電気的接続部材によってLEDチップに電力を供給するためのリード部とを並べて配設することで、複数のLEDチップと各LEDチップに電力を供給するための電気的接続部材をパッド部とリード部を介して並列に接続することができるから、リードフレームにパッド部とリード部の数に応じてLEDチップと電気的接続部材を多数並列に配列して集積することができる。
The LED lead frame according to the present invention extends in a direction intersecting with the pad base and extends in a direction intersecting with the lead base and one or a plurality of pad portions for mounting LED chips arranged at a predetermined interval. One or a plurality of lead portions arranged at intervals are alternately arranged in a non-contact manner.
According to the lead frame for LED according to the present invention, by arranging the pad portion for mounting the LED chip and the lead portion for supplying power to the LED chip by an electrical connection member such as a metal wire, Since a plurality of LED chips and an electrical connection member for supplying power to each LED chip can be connected in parallel via the pad portion and the lead portion, the lead frame can be connected in accordance with the number of the pad portion and the lead portion. Many LED chips and electrical connection members can be arranged in parallel and integrated.

本発明によるLEDモジュールは、パッド基部に対して交差する方向に延びて所定間隔で配列された1または複数のパッド部と、リード基部に対して交差する方向に延びて所定間隔で配列された1または複数のリード部とが、非接触で互い違いに配列されたリードフレームと、パッド部の延在方向に搭載された複数のLEDチップと、これらのLEDチップに電力を供給するためにリード部にそれぞれ電気的に接続された電気的接続部材と、パッド部及びリード部の間の開口部分に充填して連結すると共に複数のLEDチップ及び電気的接続部材を囲むようにリフレクターを形成した第一の樹脂と、リフレクターで囲われた複数のLEDチップ及び電気的接続部材を封止する第二の樹脂と、を備えたことを特徴とする。
本発明によるLEDモジュールによれば、パッド部とリード部が非接触で互い違いに配列され、各パッド部に複数のLEDチップを搭載すると共に各LEDチップに電力を供給する電気的接続部材をリード部に接続できるため、パッド部とリード部の延在方向に多数のLEDチップと金属ワイヤー等の電気的接続部材を密集させてそれぞれ搭載できて、リードフレームの各パッド上に複数のLEDチップを集積して実装できる。
The LED module according to the present invention extends in a direction intersecting the pad base and arranged at a predetermined interval, and 1 extends in a direction intersecting the lead base and arranged at a predetermined interval. Alternatively, a lead frame in which a plurality of lead portions are alternately arranged in a non-contact manner, a plurality of LED chips mounted in the extending direction of the pad portion, and a lead portion for supplying power to these LED chips A first electrical connection member that is electrically connected to each other and is filled and connected to an opening between the pad portion and the lead portion, and a reflector is formed so as to surround the plurality of LED chips and the electrical connection member. A resin and a second resin that seals the plurality of LED chips and the electrical connection member surrounded by the reflector are provided.
According to the LED module of the present invention, the pad portions and the lead portions are alternately arranged in a non-contact manner, and a plurality of LED chips are mounted on each pad portion, and an electrical connection member that supplies power to each LED chip is provided as the lead portion. It is possible to connect multiple LED chips and electrical connection members such as metal wires in the extending direction of the pad part and the lead part, respectively, and integrate a plurality of LED chips on each pad of the lead frame. Can be implemented.

また、パッド部に搭載された複数のLEDチップは電気的接続部材によって並列に接続されていることが好ましい。
パッド部とリード部に並列に接続された複数のLEDチップのいずれかに故障が生じたとしても他のLEDチップは遮断されることなく駆動可能であり、光源として継続して使用できる。
Moreover, it is preferable that the several LED chip mounted in the pad part is connected in parallel by the electrical connection member.
Even if a failure occurs in any of the plurality of LED chips connected in parallel to the pad portion and the lead portion, the other LED chips can be driven without being cut off and can be continuously used as a light source.

また、LEDチップはLED電球であることが好ましい。
本発明に係るLEDモジュールによれば、リードフレームの各パッド部に複数のLEDチップを集積して実装できるため、LEDチップをLED電球として高密度で発光でき、小型で高輝度の光源を得られる。そのため、例えば液晶表示装置のバックライトとして用いる等、各種用途の光源として使用できる。
The LED chip is preferably an LED bulb.
According to the LED module of the present invention, since a plurality of LED chips can be integrated and mounted on each pad portion of the lead frame, the LED chip can be used as an LED bulb to emit light at high density, and a small, high-brightness light source can be obtained. . Therefore, it can be used as a light source for various purposes, for example, as a backlight of a liquid crystal display device.

また、本発明によるLED用リードフレーム基板は、複数のLED用リードフレームが多面付けされていて互いに連結されてなることを特徴とする。
本発明によれば、パッド部とリード部を互い違いに配列させた裁断単体のリードフレームを形成できると共に、裁断単体からなる複数のリードフレームをタイバー等によって互いに連結して集積され多面付けされたリードフレーム基板を形成でき、これをタイバー等の連結部分でダイシングすることで複数のリードフレームを効率よく製造できる。
Also, the LED lead frame substrate according to the present invention is characterized in that a plurality of LED lead frames are attached to each other and connected to each other.
According to the present invention, it is possible to form a single lead frame in which the pad portions and the lead portions are alternately arranged, and a plurality of lead frames composed of the single cut portions are connected to each other by a tie bar or the like to be integrated and multifaceted. A frame substrate can be formed, and a plurality of lead frames can be efficiently manufactured by dicing this with a connecting portion such as a tie bar.

本発明によるLEDモジュールの製造方法は、パッド基部に対して交差する方向に延びて所定間隔で配列された1または複数のパッド部と、リード基部に対して交差する方向に延びて所定間隔で配列された1または複数のリード部とが、非接触で互い違いに配列されたリードフレームを形成する工程と、第一の樹脂によってリードフレームの開口部分を充填すると共にリフレクターを形成する工程と、1または複数のパッド部にそれぞれ複数のLEDチップを搭載すると共にこれらLEDチップに電力を供給するために電気的接続部材をリード部にそれぞれ電気的に接続する工程と、複数のLEDチップと電気的接続部材を第二の樹脂でモールドする工程とを備えたことを特徴とする。
本発明によるLEDモジュールの製造方法によれば、銅板等の金属板をエッチング等によって、1または複数のパッド部と1または複数のリード部が非接触で互い違いに配列されたLED用リードフレームを形成し、各パッド部に複数のLEDチップを集積して搭載すると共にリード部と電気的接続部材で電気的に接続することができるから、1または複数のパッド部とリード部の組合せによって多数のLEDチップを並列に且つ密集した状態で集積できる。
An LED module manufacturing method according to the present invention includes one or a plurality of pad portions extending in a direction intersecting with a pad base and arranged at a predetermined interval, and extending in a direction intersecting with the lead base and arranged at a predetermined interval. Forming a lead frame in which the one or more lead portions are arranged in a non-contact and staggered manner, filling the opening portion of the lead frame with a first resin and forming a reflector; A step of mounting a plurality of LED chips on a plurality of pad portions and electrically connecting an electrical connection member to each lead portion in order to supply power to the LED chips; a plurality of LED chips and an electrical connection member; And a step of molding with a second resin.
According to the LED module manufacturing method of the present invention, an LED lead frame in which one or more pad portions and one or more lead portions are alternately arranged in a non-contact manner is formed by etching a metal plate such as a copper plate. In addition, since a plurality of LED chips can be integrated and mounted on each pad portion and electrically connected by a lead portion and an electrical connection member, a large number of LEDs can be obtained by combining one or a plurality of pad portions and lead portions. Chips can be integrated in parallel and densely.

上述のように、本発明に係るLED用リードフレーム及びLEDモジュールによれば、
1または複数のパッド部とリード部が非接触で互い違いに配列され、パッド部にLEDチップを搭載すると共にLEDチップに電力を供給するために電気的接続部材をリード部に接続するため、狭い面積内に多数のLEDチップと電気的接続部材を密集させて配列させることができる。そのため、LED用リードフレーム上の単位面積当たりのLEDチップの搭載数を多く設置できて集積化して実装できる。
また、本発明に係るLEDモジュールによれば、リードフレームのパッド部に多数のLEDチップを集積して実装できるため、LEDチップをLED電球として集積状態で発光できるため、小型で高輝度の光源を得られる。
As described above, according to the LED lead frame and the LED module according to the present invention,
One or a plurality of pad portions and lead portions are alternately arranged in a non-contact manner, and an LED chip is mounted on the pad portion and an electrical connection member is connected to the lead portion to supply power to the LED chip, so that the area is small. A large number of LED chips and electrical connection members can be densely arranged inside. Therefore, a large number of LED chips can be installed per unit area on the LED lead frame and can be integrated and mounted.
In addition, according to the LED module of the present invention, since a large number of LED chips can be integrated and mounted on the pad portion of the lead frame, the LED chip can emit light in an integrated state as an LED bulb. can get.

また、本発明によるLEDモジュールの製造方法によれば、1または複数のパッド部とリード部が非接触で互い違いに配列されたリードフレームを形成し、パッド部に複数のLEDチップを集積して搭載すると共にリード部と電気的接続部材で電気的に接続することができるから、多数のLEDチップを密集した状態で実装できる。   In addition, according to the LED module manufacturing method of the present invention, a lead frame in which one or a plurality of pad portions and lead portions are alternately arranged in a non-contact manner is formed, and a plurality of LED chips are integrated and mounted on the pad portions. In addition, since the lead portion and the electrical connection member can be electrically connected, a large number of LED chips can be mounted in a dense state.

また、本発明によるLED用リードフレーム基板によれば、複数のリードフレームを多面付けすることで多連のLED用リードフレームを同時に製造することができ、その後にダイシングによって分離できるため、LEDモジュールの製造効率がよい。   Further, according to the LED lead frame substrate of the present invention, a plurality of LED lead frames can be simultaneously manufactured by attaching a plurality of lead frames, and then separated by dicing. Manufacturing efficiency is good.

本発明の実施形態によるLEDモジュールの平面図である。It is a top view of the LED module by embodiment of this invention. 図1に示すLEDモジュールのA−A線要部拡大断面図である。It is an AA line principal part expanded sectional view of the LED module shown in FIG. 略櫛歯状のパッド部材とリード部材とを互い違いに組み合わせたリードフレームの平面図である。It is a top view of the lead frame which combined the substantially comb-tooth-shaped pad member and the lead member alternately. 複数のリードフレームを集積して形成したリードフレーム基板の全体図である。1 is an overall view of a lead frame substrate formed by integrating a plurality of lead frames. FIG. 図1に示すLEDモジュールをリードフレーム基板に多面付けした状態を示す平面図である。FIG. 2 is a plan view showing a state in which the LED module shown in FIG. 実施形態によるLEDモジュールの製造工程を示す要部断面図であり、(a)は基板をエッチングしたパッド部とリード部からなるリードフレームを示す図、(b)は充填樹脂によってパッド部とリード部を連結すると共にリフレクターを形成した図、(c)はパッド部にLEDチップを搭載して金属ワイヤーでリード部に接続した状態を示す図、(d)はリフレクター内に透明封止樹脂を充填してLEDチップを封止したLEDモジュールを示す図である。It is principal part sectional drawing which shows the manufacturing process of the LED module by embodiment, (a) is a figure which shows the lead frame which consists of the pad part and lead part which etched the board | substrate, (b) is a pad part and lead part by filling resin. (C) is a diagram showing a state in which an LED chip is mounted on the pad portion and connected to the lead portion with a metal wire, and (d) is a case where a transparent sealing resin is filled in the reflector. It is a figure which shows the LED module which sealed the LED chip. 図8に示す従来のLEDモジュールのB−B線要部縦断面図である。It is a BB line principal part longitudinal cross-sectional view of the conventional LED module shown in FIG. 図7に示すLEDモジュールを複数接続した平面図である。FIG. 8 is a plan view in which a plurality of LED modules shown in FIG. 7 are connected.

以下、本発明の実施形態によるLED用リードフレームとLEDモジュールについて図面を参照して詳細に説明する。
図1及び図2に示すLEDモジュール1は、LED発光素子用リードフレーム(以下、単にリードフレームと称する)2と、リードフレーム2の上面に樹脂モールドした第一の樹脂としての絶縁性の充填樹脂3と、リードフレーム2上に搭載されたLEDチップ4とを備えている。LEDチップ4はこの実施形態では例えばLED電球を構成する。
Hereinafter, LED lead frames and LED modules according to embodiments of the present invention will be described in detail with reference to the drawings.
An LED module 1 shown in FIGS. 1 and 2 includes an LED light emitting element lead frame (hereinafter simply referred to as a lead frame) 2 and an insulating filling resin as a first resin molded on the upper surface of the lead frame 2. 3 and an LED chip 4 mounted on the lead frame 2. In this embodiment, the LED chip 4 constitutes an LED bulb, for example.

リードフレーム2は、図3に示すように、略櫛形を形成したパッド部材6と略櫛形を形成したリード部材7とが対向して配設されて構成されている。パッド部材6は例えば幅広のパッド基部6aに対して略直交する方向にLEDチップ4を搭載するための例えば短冊状のパッド部6bが所定間隔で複数配列されて櫛形に一体形成されている。リード部材7は例えば幅広のリード基部7aに対して略直交する方向に例えば短冊状のパッド部7bが所定間隔で複数配列されて櫛形に一体形成されている。
リードフレーム2は、板状の金属板、例えば鉄−ニッケル等の合金薄板、或いは銅−ニッケル−錫等の合金薄板からなっている。リードフレーム2は、この金属合金製の板状の基材を例えば第二塩化鉄等のエッチャントを用いてエッチングすることにより形成される。或いは、金型による打ち抜き加工で製造してもよい。
As shown in FIG. 3, the lead frame 2 includes a pad member 6 having a substantially comb shape and a lead member 7 having a substantially comb shape. For example, a plurality of strip-shaped pad portions 6b for mounting the LED chip 4 in a direction substantially orthogonal to the wide pad base portion 6a are arranged at a predetermined interval and are integrally formed in a comb shape. In the lead member 7, for example, a plurality of strip-like pad portions 7b are arranged at a predetermined interval in a direction substantially orthogonal to the wide lead base portion 7a and are integrally formed in a comb shape.
The lead frame 2 is made of a plate-shaped metal plate, for example, an alloy thin plate such as iron-nickel or an alloy thin plate such as copper-nickel-tin. The lead frame 2 is formed by etching the metal alloy plate-like base material using an etchant such as ferric chloride. Or you may manufacture by the punching process by a metal mold | die.

リードフレーム2は、図3に示すようにパッド部材6のパッド部6bとリード部材7のリード部7bとが対向して互いに非接触で互い違いに噛み合うように配設されている。そして、各パッド部6bには複数のLEDチップ4が搭載可能とされている。
また、リードフレーム2のパッド部材6とリード部材7は充填樹脂3がパッド部6bとリード部7bとの間の開口に充填されて樹脂モールドされて一体化されている。しかも、充填樹脂3にはリードフレーム2に搭載される複数のLEDチップ4を囲うように例えば略四角枠形状をなす土手を形成してリフレクター10が形成されている。このリフレクター10で囲われた凹部はキャビティ11を構成し、その内面は外側に傾斜する反射面を構成する。
As shown in FIG. 3, the lead frame 2 is disposed so that the pad portion 6 b of the pad member 6 and the lead portion 7 b of the lead member 7 face each other and engage with each other in a non-contact manner. A plurality of LED chips 4 can be mounted on each pad portion 6b.
Further, the pad member 6 and the lead member 7 of the lead frame 2 are integrated by filling the resin 3 into the opening between the pad portion 6b and the lead portion 7b, resin molding, and integration. Moreover, a reflector 10 is formed on the filling resin 3 by forming a bank having, for example, a substantially square frame shape so as to surround the plurality of LED chips 4 mounted on the lead frame 2. The concave portion surrounded by the reflector 10 constitutes a cavity 11, and the inner surface thereof constitutes a reflecting surface that is inclined outward.

図1及び図2に示すように、キャビティ11内に配設されたリードフレーム2のパッド部6bとリード部7bは互いに略平行に交互に配列されており、電極部を構成する部分にめっき処理がなされている。各パッド部6bには、LEDチップ4がその長手方向に沿って所定間隔で複数搭載されており、パッド部6bに隣接するリード部7bには各LEDチップ4に電力を供給する電気的接続部材として金属ワイヤー12が電気的に接続されている。
また、LEDチップ4は例えば絶縁部材を介してパッド部6bに搭載され、LEDチップ4に電力を供給する別の金属ワイヤー13によってパッド部6bに電気的に接続されている。或いはLEDチップ3は金属ワイヤー13を設けることなく導電部材を介してパッド部6bに導通状態で搭載されることで、パッド部6bから直接LEDチップ4に電力を供給するようにしてもよい。
As shown in FIGS. 1 and 2, the pad portions 6b and the lead portions 7b of the lead frame 2 disposed in the cavity 11 are alternately arranged substantially in parallel with each other, and a plating process is performed on a portion constituting the electrode portion. Has been made. A plurality of LED chips 4 are mounted on each pad portion 6b at a predetermined interval along the longitudinal direction thereof, and an electrical connection member that supplies power to each LED chip 4 on a lead portion 7b adjacent to the pad portion 6b. The metal wire 12 is electrically connected.
The LED chip 4 is mounted on the pad portion 6b via an insulating member, for example, and is electrically connected to the pad portion 6b by another metal wire 13 that supplies power to the LED chip 4. Alternatively, the LED chip 3 may be directly connected to the LED chip 4 from the pad portion 6b by being mounted on the pad portion 6b through the conductive member without providing the metal wire 13.

そして、1本のパッド部6bに所定間隔で搭載された複数のLEDチップ4は金属ワイヤー12を介して隣接するリード部7bに電気的に接続されることで、これら複数のLEDチップ4は電気的に並列に接続された状態になる。
そのため、本実施形態によるLEDモジュール1によれば、図1に示すように例えば各5本のパッド部6bとリード部7bとの間では、多数のLEDチップ4はそれぞれ並列に接続された状態となる。これにより、単一のリードフレーム2の複数のパッド部6bに例えば40〜50個のLEDチップ4が集積化されてLED電球として搭載されている。
The plurality of LED chips 4 mounted on one pad portion 6b at a predetermined interval are electrically connected to the adjacent lead portions 7b via the metal wires 12, so that the plurality of LED chips 4 are electrically connected. Are connected in parallel.
Therefore, according to the LED module 1 according to the present embodiment, as shown in FIG. 1, for example, between each of the five pad portions 6 b and the lead portions 7 b, a large number of LED chips 4 are connected in parallel. Become. Accordingly, for example, 40 to 50 LED chips 4 are integrated on the plurality of pad portions 6b of the single lead frame 2 and mounted as LED bulbs.

なお、パッド部6bは、図2に示すように、表面(上面)がLEDチップ4を搭載するための搭載面Aとされており、搭載面Aの反対側の裏面(下面)はパッド部放熱面Bとされている。パッド部放熱面Bは、LEDチップ4から発生する駆動熱やLEDチップ4の周囲環境条件から熱を放散させる放熱部とされている。
リード部7bは、パッド部6bと同様の厚みを有しており、リード部7bの表面(上面)が、LEDチップ4に電気的に接続される接続面Cとされ、接続面Cの反対側の裏面(下面)が、リード部7bにおいて発生する熱を放熱する放熱部として機能するリード部放熱面Dとされている。
As shown in FIG. 2, the pad portion 6b has a front surface (upper surface) as a mounting surface A for mounting the LED chip 4, and a back surface (lower surface) opposite to the mounting surface A is a pad portion heat dissipation. It is set as the surface B. The pad portion heat radiation surface B is a heat radiation portion that dissipates heat from driving heat generated from the LED chip 4 and ambient environment conditions of the LED chip 4.
The lead portion 7b has the same thickness as the pad portion 6b, and the surface (upper surface) of the lead portion 7b is a connection surface C that is electrically connected to the LED chip 4, and is opposite to the connection surface C. The back surface (lower surface) of the lead portion is a lead portion heat radiating surface D that functions as a heat radiating portion that radiates heat generated in the lead portion 7b.

例えば、パッド部6bの搭載面Aとリード部7bの接続面Cとは、同一の板状基材から形成されるため、特段の加工を行わない限り同一平面とされている。同様に、パッド部6bのパッド部放熱面B及びリード部7bのリード部放熱面Dも同一平面とされている。
また、パッド部6bに実装されるLEDチップ4に対してリード部7bの接続面Cはワイヤーボンディングやチップボンディングによって接続されており、本実施形態では、例えば金線等からなる金属ワイヤー12を介して電気的に接続されている。
なお、パッド部6bとリード部7bの接続面(表面)へのメッキは、銀メッキ、金メッキ、パラジウムメッキ等の中から用途に合わせて自由に選択することができる。また、このように接続面にメッキをするのに先立って、接続面に対して熱拡散性に優れたニッケルメッキ等の下地メッキを行なってもよい。
For example, since the mounting surface A of the pad portion 6b and the connection surface C of the lead portion 7b are formed from the same plate-like base material, they are the same plane unless special processing is performed. Similarly, the pad portion heat radiating surface B of the pad portion 6b and the lead portion heat radiating surface D of the lead portion 7b are also coplanar.
Further, the connection surface C of the lead portion 7b is connected to the LED chip 4 mounted on the pad portion 6b by wire bonding or chip bonding. In the present embodiment, for example, via a metal wire 12 made of a gold wire or the like. Are electrically connected.
The plating on the connection surface (front surface) of the pad portion 6b and the lead portion 7b can be freely selected from silver plating, gold plating, palladium plating and the like according to the application. In addition, prior to plating the connection surface in this manner, base plating such as nickel plating having excellent thermal diffusibility may be performed on the connection surface.

そして、LEDモジュール1では、キャビティ5の略逆四角錐台形状の凹部内には第二の樹脂として透明封止樹脂15が充填され、この透明封止樹脂15によって40〜50個のLEDチップ4及び金属ワイヤー12、13が封止されている。透明封止樹脂15は高光透過率(透過率90〜95%以上)を有する樹脂である。   In the LED module 1, a transparent sealing resin 15 is filled as a second resin in the substantially inverted truncated pyramid-shaped recess of the cavity 5, and 40 to 50 LED chips 4 are filled with the transparent sealing resin 15. And the metal wires 12 and 13 are sealed. The transparent sealing resin 15 is a resin having a high light transmittance (transmittance of 90 to 95% or more).

次に、図4は断裁単位として図3に示すリードフレーム2を多面付けした多連リードフレームの構成例を模式的に示す図である。図4に示す多連リードフレーム基板17は断裁単位のリードフレーム2が縦横方向に3枚×3枚ずつ配列され、それぞれタイバー18を介して互いに連結されている。各リードフレーム2は例えばパッド部材6のパッド基部6aとリード部材7のリード基部7aとの間でタイバー18によって連結されている。
そして、多連リードフレーム基板17は一括して加工処理が行われ、図5に示すように、多連のLEDモジュール1が複数形成されることになる。このようにして得られた多連のLEDモジュール19についてタイバー18でダイシングを行うことで個別のLEDモジュール1が得られる。
Next, FIG. 4 is a diagram schematically showing a configuration example of a multiple lead frame in which the lead frame 2 shown in FIG. In the multiple lead frame substrate 17 shown in FIG. 4, 3 × 3 pieces of lead frames 2 in a cutting unit are arranged in the vertical and horizontal directions, and are connected to each other through tie bars 18. Each lead frame 2 is connected by, for example, a tie bar 18 between the pad base 6 a of the pad member 6 and the lead base 7 a of the lead member 7.
The multiple lead frame substrate 17 is processed in a lump, and a plurality of multiple LED modules 1 are formed as shown in FIG. Individual LED modules 1 can be obtained by dicing the multiple LED modules 19 obtained in this way with a tie bar 18.

次に、本実施形態によるLEDモジュール1の製造方法について図6により説明する。
まずは、Fe−Ni等の合金薄膜またはCu−Ni−Sn等の金属合金製の板状をなすリードフレーム用金属材料を用意する。この金属材料の上面と裏面にフォトレジスト(感光性樹脂)を塗布してレジスト層を形成し、所定のパターン露光用フォトマスクを用いてフォトレジスト層にパターンを露光し、次いで、現像、必要に応じて硬膜処理をする。
これにより、金属材料の上面にパッド部材6とリード部材7を形成する部分を残してフォトレジストが現像除去されたレジストパターンが形成される。
Next, the manufacturing method of the LED module 1 according to the present embodiment will be described with reference to FIG.
First, a metal material for a lead frame having a plate shape made of an alloy thin film such as Fe—Ni or a metal alloy such as Cu—Ni—Sn is prepared. Photoresist (photosensitive resin) is applied to the top and back surfaces of this metal material to form a resist layer, the pattern is exposed to the photoresist layer using a predetermined pattern exposure photomask, and then developed and necessary. The dura is processed accordingly.
As a result, a resist pattern is formed in which the photoresist is developed and removed, leaving portions where the pad member 6 and the lead member 7 are formed on the upper surface of the metal material.

次に、レジストパターンが形成された金属材料の上面に、フォトレジスト非形成部を塩化第二鉄等のエッチャントを用いてエッチング加工処理(ハーフエッチング処理)を行なう。これにより、パッド部材6及びリード部材7となるべき部分の間には、範囲の狭いレジストパターンが配置されていることにより、比較的深度の小さいエッチング部分が形成される。これにより、金属材料の上面に凹凸形状が形成される。裏面にも同様に凹凸形状が形成される。
そして、金属材料は略櫛状のパッド部材6とリード部材7とが、パッド基部6aの複数のパッド部6bとリード基部7aの複数のリード部7bとを互い違いに非接触で配列させた図3に示す形状となる。これをパッド部6bとリード基部7aの長手方向に直交する方向の断面で見ると図6(a)に示す構成になる。
Next, an etching process (half-etching process) is performed on the upper surface of the metal material on which the resist pattern is formed using an etchant such as ferric chloride. Thus, an etching portion having a relatively small depth is formed between the portions to be the pad member 6 and the lead member 7 by disposing a resist pattern having a narrow range. Thereby, an uneven shape is formed on the upper surface of the metal material. An uneven shape is similarly formed on the back surface.
The metal material is composed of a substantially comb-shaped pad member 6 and a lead member 7 in which a plurality of pad portions 6b of the pad base portion 6a and a plurality of lead portions 7b of the lead base portion 7a are alternately arranged in a non-contact manner. The shape shown in FIG. When this is seen in a cross section in a direction orthogonal to the longitudinal direction of the pad portion 6b and the lead base portion 7a, the configuration shown in FIG.

次に、トランスファーモールド成形もしくは射出成形によりパッド部材6とリード部材7の間の開口に絶縁性の充填樹脂3を充填して固定すると共に、その周囲に充填樹脂3によってリフレクター10を成形する。これにより、図6(b)に示すように、リードフレーム2の複数のパッド部6bとリード部7bの上面の周囲を充填樹脂3によって内面凹部が略逆四角錐台形状で内面に上方に向けて反射面を拡径させた土手状のキャビティ11を有するリフレクター10が形成される。     Next, the insulating filling resin 3 is filled and fixed in the opening between the pad member 6 and the lead member 7 by transfer molding or injection molding, and the reflector 10 is molded around the filling resin 3. As a result, as shown in FIG. 6 (b), the inner surface of the plurality of pad portions 6b of the lead frame 2 and the periphery of the upper surface of the lead portion 7b is filled with the resin 3 so that the inner surface concave portion has a substantially inverted truncated pyramid shape and faces upward on the inner surface Thus, the reflector 10 having the bank-like cavity 11 whose reflection surface is enlarged in diameter is formed.

そして、キャビティ11の反射面で囲まれた領域内に露出するリードフレーム2の複数のパッド部6bの搭載面Aとリード部7bの接続面Cに、耐熱拡散性に優れたNiめっき等の下地めっきを行い、その後に、銀めっき、金めっき、パラジウムめっき等を行う。ここで、LEDモジュール1を外部基板に搭載、接続するために、パッド部6bのパッド部放熱面B及びリード部7bのリード部放熱面Dにも銀めっき、金めっき、パラジウムめっき等を行ってもよい。   Then, the mounting surface A of the plurality of pad portions 6b of the lead frame 2 exposed in the region surrounded by the reflective surface of the cavity 11 and the connection surface C of the lead portions 7b are ground such as Ni plating having excellent heat diffusion properties. Plating is performed, followed by silver plating, gold plating, palladium plating, or the like. Here, in order to mount and connect the LED module 1 to the external substrate, the pad part heat radiation surface B of the pad part 6b and the lead part heat radiation surface D of the lead part 7b are also subjected to silver plating, gold plating, palladium plating or the like. Also good.

次に、図6(c)において、リードフレーム2における1のパッド部6bの搭載面AにLEDチップ4をパッド部6bの長手方向に所定間隔で絶縁部材を介して搭載し、各LEDチップ4と隣接するリード部7bの接続面Cとを金属ワイヤー12を用いてワイヤーボンディングする。また、LEDチップ4とパッド部6bの搭載面A上の電極面にも金属ワイヤー13を用いて電気的に接続する。こうしてLEDチップ4及び金属ワイヤー12,13の装着を複数列のパッド部6b及びリード部7bについて順次行う。
次に、図6(d)に示すように、透明封止樹脂15をキャビティ11内に充填して満たし、リードフレーム2の表面のパッド部6b及びリード部7bにおける複数のLEDチップ4及び金属ワイヤー12,13を封止する。
このようにして、図1に示すLEDモジュール1が完成する。
Next, in FIG. 6C, the LED chips 4 are mounted on the mounting surface A of the one pad portion 6b in the lead frame 2 via insulating members at predetermined intervals in the longitudinal direction of the pad portion 6b. And the connecting surface C of the adjacent lead portion 7 b are wire-bonded using a metal wire 12. In addition, the LED chip 4 and the electrode surface on the mounting surface A of the pad portion 6 b are also electrically connected using the metal wire 13. In this way, the LED chip 4 and the metal wires 12 and 13 are sequentially attached to the plurality of rows of pad portions 6b and lead portions 7b.
Next, as shown in FIG. 6 (d), the transparent sealing resin 15 is filled in the cavity 11 and filled, and the plurality of LED chips 4 and metal wires in the pad portion 6 b and the lead portion 7 b on the surface of the lead frame 2 are filled. 12 and 13 are sealed.
In this way, the LED module 1 shown in FIG. 1 is completed.

上述のように、本実施形態によるリードフレーム2及びLEDモジュール1によれば、リードフレーム2について複数のLEDチップ4を搭載するためのパッド部6bと各LEDチップ4を電気的に接続するためのリード部7bとを交互にそれぞれ櫛形に形成することで、1つのリードフレーム2及びLEDモジュール1で例えば40〜50個の多数のLEDチップ4をリフレクター10内に集積して実装することができる。
そのため、従来のリードフレームやLEDモジュールのように1つまたは2つのLEDチップ毎にリフレクター10で囲って形成したものと比較して、比較的小さい面積で多数のLEDチップ4を高集積化して実装できる。そして、LEDチップ4をLED電球として用いた場合に多数の光源を高密度に集積させて高輝度の光源を製造でき、例えば液晶表示装置のバックライトとして用いることができて小さい面積で高輝度が得られる。
As described above, according to the lead frame 2 and the LED module 1 according to the present embodiment, the pad portion 6b for mounting the plurality of LED chips 4 on the lead frame 2 and each LED chip 4 are electrically connected. By forming the lead portions 7b alternately in a comb shape, for example, a large number of 40 to 50 LED chips 4 can be integrated and mounted in the reflector 10 with one lead frame 2 and LED module 1.
For this reason, a large number of LED chips 4 are integrated in a relatively small area and mounted in a relatively small area as compared with a conventional lead frame or LED module in which one or two LED chips are surrounded by a reflector 10. it can. When the LED chip 4 is used as an LED bulb, a high-luminance light source can be manufactured by integrating a large number of light sources at a high density. For example, the LED chip 4 can be used as a backlight of a liquid crystal display device and has a high luminance with a small area. can get.

また、本実施形態によるリードフレーム2及びLEDモジュール1によれば、略櫛型のパッド部材6及びリード部材7を対向させて櫛の歯に相当する複数のパッド部6bとリード部7bを互い違いに組み合わせたことで、それぞれのパッド部6bとリード部7bに多数のLEDチップ4を並列に接続して駆動することができる。そのため、並列に接続した複数のLEDチップ4のいずれかに故障が生じたとしても他のLEDチップ4は遮断されることなく駆動可能であり、継続して使用できる。   Further, according to the lead frame 2 and the LED module 1 according to the present embodiment, the substantially comb-shaped pad member 6 and the lead member 7 are opposed to each other, and the plurality of pad portions 6b and the lead portions 7b corresponding to comb teeth are alternately arranged. By combining them, it is possible to drive a large number of LED chips 4 connected in parallel to the respective pad portions 6b and lead portions 7b. Therefore, even if a failure occurs in any of the plurality of LED chips 4 connected in parallel, the other LED chips 4 can be driven without being cut off and can be used continuously.

また、エッチング技術によって1枚の銅板等の金属板から、櫛形のパッド部材6とリード部材7を互いに噛み合わせてなるリードフレーム2を形成できると共に、断裁単体からなる複数のリードフレーム2をタイバー18によって互いに連結して集積され多面付けされた多連リードフレーム基板17を形成できる。そして、これをタイバー18部分でダイシングすることで複数のリードフレーム2を効率よく製造できる。
また、多面付けされた複数のリードフレーム2についてそれぞれ充填樹脂3でパッド部6bとリード部7bを連結すると共にリフレクタ−10を形成して、その内側に多数のLEDチップ4を実装することで、多連のLEDモジュール17を製造することができ、その後にダイシングによって分離できるため、LEDモジュール1の製造効率がよい。
Further, the lead frame 2 formed by engaging the comb-shaped pad member 6 and the lead member 7 with each other can be formed from a single metal plate such as a copper plate by an etching technique. Thus, the multi-leaded multiple lead frame substrate 17 connected to each other can be formed. A plurality of lead frames 2 can be efficiently manufactured by dicing this at the tie bar 18 portion.
In addition, by connecting the pad portion 6b and the lead portion 7b with the filling resin 3 for each of the multiple lead frames 2 that are multifaceted, and forming the reflector 10 and mounting a large number of LED chips 4 inside thereof, Since multiple LED modules 17 can be manufactured and then separated by dicing, the manufacturing efficiency of the LED module 1 is good.

なお、本発明は上述の実施形態によるリードフレーム2、LEDパッケージ1及びその製造方法に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更が可能である。
例えば、上述の実施形態によるリードフレーム2はパッド部6bとリード部7bをそれぞれ複数形成したが、1本ずつでもよい。この場合でも1本のパッド部6bの長手方向に複数のLEDチップ4を搭載できる。
また、LEDパッケージ1の製造方法では、充填樹脂3でリードフレーム2を固定した後、パッド部6bとリード部7bをめっき(後めっき)したが、これに代えて、充填樹脂3でリードフレーム2を固定する前にパッド部6bとリード部7bをめっき(先めっき)してもよい。
The present invention is not limited to the lead frame 2, the LED package 1 and the manufacturing method thereof according to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.
For example, the lead frame 2 according to the above-described embodiment has a plurality of pad portions 6b and a plurality of lead portions 7b. Even in this case, a plurality of LED chips 4 can be mounted in the longitudinal direction of one pad portion 6b.
In the manufacturing method of the LED package 1, after the lead frame 2 is fixed with the filling resin 3, the pad portion 6 b and the lead portion 7 b are plated (post-plating). Instead, the lead frame 2 is filled with the filling resin 3. The pad portion 6b and the lead portion 7b may be plated (pre-plating) before fixing.

また、上述の実施形態によるLEDモジュール1では、リードフレーム2が略四角形状であるために、充填樹脂3で形成するリフレクター10を内面が略四角錐台形状をなす略四角形枠状に形成したが、リフレクター10の形状は円形など適宜形状のものを採用できる。   In the LED module 1 according to the above-described embodiment, since the lead frame 2 has a substantially square shape, the reflector 10 formed of the filling resin 3 is formed in a substantially rectangular frame shape whose inner surface forms a substantially quadrangular frustum shape. The shape of the reflector 10 can be an appropriate shape such as a circle.

1 LEDモジュール
2 リードフレーム
3 充填樹脂
4 LEDチップ
6 パッド部材
6b パッド部
7 リード部材
7b リード部
10 リフレクター
11 キャビティ
12、13 金属ワイヤー
15 透明封止樹脂
17 多連リードフレーム基板
18 タイバー
19 多連のLEDモジュール
DESCRIPTION OF SYMBOLS 1 LED module 2 Lead frame 3 Filling resin 4 LED chip 6 Pad member 6b Pad part 7 Lead member 7b Lead part 10 Reflector 11 Cavity 12, 13 Metal wire 15 Transparent sealing resin 17 Multiple lead frame substrate 18 Tie bar 19 Multiple LED module

Claims (6)

パッド基部に対して交差する方向に延びて所定間隔で配列されたLEDチップ搭載用の1または複数のパッド部と、リード基部に対して交差する方向に延びて所定間隔で配列された1または複数のリード部とが、非接触で互い違いに配列されてなることを特徴とするLED用リードフレーム。   One or a plurality of pad portions for mounting an LED chip extending in a direction intersecting the pad base and arranged at a predetermined interval, and one or a plurality of pad portions extending in a direction intersecting the lead base and arranged at a predetermined interval A lead frame for LED, wherein the lead portions of the LED are alternately arranged in a non-contact manner. パッド基部に対して交差する方向に延びて所定間隔で配列された1または複数のパッド部と、リード基部に対して交差する方向に延びて所定間隔で配列された1または複数のリード部とが、非接触で互い違いに配列されたリードフレームと、
前記パッド部の延在方向に搭載された複数のLEDチップと、
これらのLEDチップに電力を供給するためにリード部にそれぞれ電気的に接続された電気的接続部材と、
前記パッド部及びリード部の間の開口部分に充填して連結すると共に前記複数のLEDチップ及び電気的接続部材を囲むようにリフレクターを形成した第一の樹脂と、
前記リフレクターで囲われた前記複数のLEDチップ及び電気的接続部材を封止する第二の樹脂と、を備えたことを特徴とするLEDモジュール。
One or a plurality of pad portions extending in a direction intersecting the pad base and arranged at a predetermined interval, and one or a plurality of lead portions extending in a direction intersecting the lead base and arranged at a predetermined interval Leadframes arranged in a non-contact and staggered fashion,
A plurality of LED chips mounted in the extending direction of the pad portion;
In order to supply power to these LED chips, electrical connection members electrically connected to the lead portions,
A first resin in which an opening between the pad portion and the lead portion is filled and connected and a reflector is formed so as to surround the plurality of LED chips and the electrical connection member;
An LED module comprising: the plurality of LED chips surrounded by the reflector; and a second resin that seals the electrical connection member.
前記パッド部に搭載された複数のLEDチップは並列に接続されている請求項2に記載されたLEDモジュール。   The LED module according to claim 2, wherein the plurality of LED chips mounted on the pad portion are connected in parallel. 前記LEDチップはLED電球である請求項2または3に記載されたLEDモジュール。   The LED module according to claim 2, wherein the LED chip is an LED bulb. 請求項1に記載された複数の前記LED用リードフレームが多面付けされていて互いに連結されてなることを特徴とするLED用リードフレーム基板。   The LED lead frame substrate according to claim 1, wherein the LED lead frames are multi-faced and connected to each other. パッド基部に対して交差する方向に延びて所定間隔で配列された1または複数のパッド部と、リード基部に対して交差する方向に延びて所定間隔で配列された1または複数のリード部とが、非接触で互い違いに配列されたリードフレームを形成する工程と、
第一の樹脂によって前記リードフレームの開口部分を充填すると共にリフレクターを形成する工程と、
前記1または複数のパッド部にそれぞれ複数のLEDチップを搭載すると共に該LEDチップに電力を供給するために電気的接続部材を前記リード部にそれぞれ電気的に接続する工程と、
前記複数のLEDチップと電気的接続部材を第二の樹脂でモールドする工程と
を備えたことを特徴とするLEDモジュールの製造方法。
One or a plurality of pad portions extending in a direction intersecting the pad base and arranged at a predetermined interval, and one or a plurality of lead portions extending in a direction intersecting the lead base and arranged at a predetermined interval Forming lead frames arranged in a staggered manner in a non-contact manner;
Filling the opening portion of the lead frame with a first resin and forming a reflector;
A step of mounting a plurality of LED chips on each of the one or a plurality of pad portions and electrically connecting an electrical connection member to the lead portions in order to supply power to the LED chips;
And a step of molding the plurality of LED chips and the electrical connection member with a second resin.
JP2011043997A 2011-03-01 2011-03-01 Lead frame for led, led module, and manufacturing method thereof Withdrawn JP2012182297A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101937196B1 (en) * 2017-08-08 2019-01-14 재경전광산업 주식회사 Led module, led module array for led bulb and manufacturing method thereof
JP2020021784A (en) * 2018-07-31 2020-02-06 E&E Japan株式会社 Led and manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101937196B1 (en) * 2017-08-08 2019-01-14 재경전광산업 주식회사 Led module, led module array for led bulb and manufacturing method thereof
JP2020021784A (en) * 2018-07-31 2020-02-06 E&E Japan株式会社 Led and manufacturing method

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