TWI381200B - Alignment inspection method and apparatus - Google Patents
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本發明是有關於一種對位檢測方法和對位檢測裝置,且特別是有關於晶片與透光基板的對位檢測方法和對位檢測裝置。The present invention relates to a registration detecting method and a registration detecting device, and more particularly to a alignment detecting method and a registration detecting device for a wafer and a light-transmitting substrate.
在例如平面顯示面板的製造程序中,常需將各種不同的電子元件接合於基板上。以液晶顯示模組為例,液晶顯示模組的組裝包括對液晶顯示面板、驅動電路晶片、軟性電路板與印刷電路板等元件進行接合,並形成電性連接。而當驅動電路晶片設置於液晶顯示面板的玻璃基板上時,通常需進行一對位檢測,以確認驅動電路晶片是否準確地對位於玻璃基板上。In a manufacturing process such as a flat display panel, it is often necessary to bond a variety of different electronic components to a substrate. Taking the liquid crystal display module as an example, the assembly of the liquid crystal display module includes bonding the components such as the liquid crystal display panel, the driving circuit chip, the flexible circuit board, and the printed circuit board, and forming an electrical connection. When the driving circuit chip is disposed on the glass substrate of the liquid crystal display panel, a pair of bit detection is usually required to confirm whether the driving circuit wafer is accurately positioned on the glass substrate.
然而,目前的對位方式係將驅動電路晶片的晶片對準標記對準於玻璃基板上的基板對準標記,再利用異方性導電膜(Anisotropic Conductive Film;ACF)來進行壓合固定。因此,在驅動電路晶片和玻璃基板壓合後,僅能透過玻璃基板來取得基板對準標記的位置,而無法取得晶片對準標記的位置,進而無法比對基板對準標記與晶片對準標記的位置來確認驅動電路晶片是否準確地對位於玻璃基板上。However, the current alignment method is to align the wafer alignment mark of the driving circuit wafer with the substrate alignment mark on the glass substrate, and then press-fix and fix it with an anisotropic conductive film (ACF). Therefore, after the driving circuit wafer and the glass substrate are pressed together, the position of the substrate alignment mark can be obtained only through the glass substrate, and the position of the wafer alignment mark cannot be obtained, and the substrate alignment mark and the wafer alignment mark cannot be compared. The position is to confirm whether the driver circuit wafer is accurately positioned on the glass substrate.
因此本發明之一方面係在於提供一種對位檢測方法和對位檢測裝置,藉以檢測晶片(例如驅動電路晶片)是否準確地對位於透光基板上,或估算晶片與透光基板之間的對位偏移量。Therefore, an aspect of the present invention is to provide a registration detecting method and a registration detecting device for detecting whether a wafer (for example, a driving circuit wafer) is accurately positioned on a light-transmitting substrate, or estimating a pair between the wafer and the light-transmitting substrate. Bit offset.
本發明之另一方面係在於提供一種對位檢測方法和對位 檢測裝置,藉以自動地根據對位檢測結果來調整晶片與透光基板之間的相對位置。Another aspect of the present invention is to provide a registration detection method and alignment The detecting device automatically adjusts the relative position between the wafer and the light-transmitting substrate according to the alignment detection result.
本發明之又一方面係在於提供一種對位檢測方法和對位檢測裝置,藉以在任意過程中進行對位檢測或監測,且不受晶片與透光基板之間的接合層的影響。Yet another aspect of the present invention is to provide a registration detecting method and a registration detecting device for performing alignment detection or monitoring in an arbitrary process without being affected by a bonding layer between a wafer and a light-transmitting substrate.
根據本發明之實施例,本發明之對位檢測方法包含提供至少一晶片,其中晶片具有晶片對準標記;提供透光基板,其中透光基板設有基板對準標記;對位晶片的晶片對準標記於透光基板的基板對準標記上;利用第一檢測單元來穿透過晶片,而擷取晶片對準標記的位置;利用第二檢測單元來穿透過透光基板,而擷取基板對準標記的位置;以及比對晶片對準標記的位置與基板對準標記的位置。According to an embodiment of the present invention, the alignment detecting method of the present invention comprises providing at least one wafer in which the wafer has a wafer alignment mark, a transparent substrate provided, wherein the transparent substrate is provided with a substrate alignment mark, and a wafer pair of the alignment wafer Marking on the substrate alignment mark of the transparent substrate; using the first detecting unit to penetrate the wafer to capture the position of the wafer alignment mark; using the second detecting unit to penetrate the transparent substrate, and picking the substrate pair The position of the quasi-mark; and the position of the aligned wafer alignment mark and the position of the substrate alignment mark.
又,根據本發明之實施例,本發明之對位檢測裝置用以檢測晶片在透光基板上的對位情形,其中晶片具有晶片對準標記,透光基板設有基板對準標記,對位檢測裝置包含第一檢測單元、第二檢測單元及處理單元。第一檢測單元係用以穿透過晶片來擷取晶片對準標記的位置,第二檢測單元係用以穿透過透光基板來擷取基板對準標記的位置,處理單元係用以比對晶片對準標記的位置與基板對準標記的位置。Moreover, according to an embodiment of the present invention, the alignment detecting device of the present invention is configured to detect the alignment of the wafer on the transparent substrate, wherein the wafer has a wafer alignment mark, and the transparent substrate is provided with a substrate alignment mark, and the alignment The detecting device includes a first detecting unit, a second detecting unit, and a processing unit. The first detecting unit is configured to penetrate the wafer to capture the position of the wafer alignment mark, and the second detecting unit is configured to penetrate the transparent substrate to capture the position of the substrate alignment mark, and the processing unit is configured to compare the wafer Align the position of the mark with the position of the substrate alignment mark.
又,根據本發明之實施例,本發明之對位檢測方法係用以檢測晶片在透光基板上的對位情形,其中晶片具有晶片對準標記,透光基板設有基板對準標記,對位檢測方法包含:利用第一檢測單元來穿透過該晶片,而擷取該晶片對準標記的位置;利用第二檢測單元來穿透過透光基板,而擷取基板對準標記的位置;以及比對晶片對準標記的位置與基板對準標記的位置。Moreover, according to an embodiment of the present invention, the alignment detecting method of the present invention is for detecting a alignment of a wafer on a light-transmitting substrate, wherein the wafer has a wafer alignment mark, and the transparent substrate is provided with a substrate alignment mark, The position detecting method comprises: using a first detecting unit to penetrate the wafer to capture the position of the wafer alignment mark; and using the second detecting unit to penetrate the transparent substrate to capture the position of the substrate alignment mark; The position of the wafer alignment mark is aligned with the position of the substrate alignment mark.
又,根據本發明之實施例,本發明之對位檢測方法係用以檢測驅動晶片在顯示面板上的對位情形,其中驅動晶片具有晶片對準標記,顯示面板設有基板對準標記,對位檢測方法包含:利用第一檢測單元來穿透過驅動晶片,而擷取晶片對準標記的位置;利用第二檢測單元來穿透過顯示面板,而擷取基板對準標記的位置;以及比對晶片對準標記的位置與基板對準標記的位置。Moreover, according to an embodiment of the present invention, the alignment detecting method of the present invention is for detecting a positional alignment of a driving wafer on a display panel, wherein the driving wafer has a wafer alignment mark, and the display panel is provided with a substrate alignment mark, The bit detection method comprises: using a first detecting unit to penetrate the driving wafer to capture the position of the wafer alignment mark; using the second detecting unit to penetrate the display panel to capture the position of the substrate alignment mark; and comparing The position of the wafer alignment mark is aligned with the position of the substrate alignment mark.
因此,本發明的對位檢測方法和對位檢測裝置可確實地檢測晶片是否準確地對位於透光基板上,或估算其對位偏移量,並可自動地來調整晶片與透光基板之間的相對位置。且本發明的對位檢測方法和對位檢測裝置可不受晶片與透光基板之間的接合層的影響。Therefore, the alignment detecting method and the alignment detecting device of the present invention can surely detect whether the wafer is accurately positioned on the light-transmitting substrate, or estimate the offset of the alignment, and can automatically adjust the wafer and the transparent substrate. Relative position between. Moreover, the alignment detecting method and the registration detecting device of the present invention are not affected by the bonding layer between the wafer and the light-transmitting substrate.
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,本說明書將特舉出一系列實施例來加以說明。但值得注意的是,此些實施例只是用以說明本發明之實施方式,而非用以限定本發明。The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood. It is to be understood that the embodiments are not intended to limit the invention.
請參照圖1和圖2,圖1係繪示依照本發明之第一實施例之對位檢測裝置的側面示意圖,圖2係繪示依照本發明之第一實施例之晶片與部分透光基板的示意圖。本實施例的對位檢測方法和對位檢測裝置100可應用於晶片210與透光基板220之間的對位檢測,例如可應用於利用玻璃覆晶接合技術(Chip on Glass;COG)中,以檢測晶片是否準確地接合於玻璃基板上。晶片210例如包含矽材料或成份,例如以單晶矽(Single Crystal Silicon)、多晶矽(Poly-silicon)或非晶矽(Amorphous Silicon)為基材的晶片。透光基板220為可允許光線穿透的基板,例如玻璃基板、塑膠基板或可撓性基板。以透光基板220為顯示面板為例,透光基板220例如為液晶顯示裝置的薄膜電晶體(Thin-Film Transistor;TFT)陣列基板,晶片210例如為驅動晶片,其可利用玻璃覆晶接合技術來接合於透光基板220的週邊區域,且需對位於透光基板220上的信號線(未繪示)。1 and FIG. 2, FIG. 1 is a side view showing a alignment detecting device according to a first embodiment of the present invention, and FIG. 2 is a view showing a wafer and a partially transparent substrate according to a first embodiment of the present invention. Schematic diagram. The alignment detecting method and the alignment detecting device 100 of the present embodiment are applicable to the alignment detection between the wafer 210 and the transparent substrate 220, and can be applied, for example, to the use of a chip on glass (COG). To detect whether the wafer is accurately bonded to the glass substrate. The wafer 210 comprises, for example, a germanium material or composition, such as a single crystal germanium (Single Crystal) Silicon), poly-silicon or Amorphous Silicon wafers. The light-transmitting substrate 220 is a substrate that allows light to pass through, such as a glass substrate, a plastic substrate, or a flexible substrate. Taking the transparent substrate 220 as a display panel as an example, the transparent substrate 220 is, for example, a thin film transistor (TFT) array substrate of a liquid crystal display device, and the wafer 210 is, for example, a driving wafer, which can utilize a glass flip chip bonding technology. The bonding is performed on the peripheral region of the transparent substrate 220, and a signal line (not shown) on the transparent substrate 220 is required.
如圖1和圖2所示,本實施例的對位檢測裝置100用以檢測晶片210在透光基板220上的對位情形,其中晶片210具有至少一晶片對準標記211(如圖2中的虛線表示),其形成於晶片210的結合面212(如背面)上,此時,在可見光範圍內,俯視晶片210並無法得知(看到)對準標記211的位置(影像)。透光基板220設有至少一基板對準標記221,基板對準標記221係形成於透光基板220的結合面222上,以對應於晶片對準標記211。如圖2所示,在本實施例中,基板對準標記221例如係形成於透光基板220的週邊區域。As shown in FIG. 1 and FIG. 2, the alignment detecting device 100 of the present embodiment is configured to detect the alignment of the wafer 210 on the transparent substrate 220, wherein the wafer 210 has at least one wafer alignment mark 211 (as shown in FIG. 2). The dotted line is formed on the bonding surface 212 (such as the back surface) of the wafer 210. At this time, in the visible light range, the position (image) of the alignment mark 211 cannot be known (viewed) by looking down on the wafer 210. The transparent substrate 220 is provided with at least one substrate alignment mark 221 formed on the bonding surface 222 of the transparent substrate 220 to correspond to the wafer alignment mark 211. As shown in FIG. 2, in the present embodiment, the substrate alignment mark 221 is formed, for example, in a peripheral region of the light-transmitting substrate 220.
如圖1所示,本實施例的對位檢測裝置100包含第一檢測單元110、第二檢測單元120、處理單元130及對位調整裝置140。當晶片210與透光基板220進行接合前,首先,需對晶片210與透光基板220進行對位,對位檢測裝置100的對位調整裝置140可吸取(或夾持)並定位晶片210於透光基板220上方,此時,晶片對準標記211係面對於基板對準標記221,且對位檢測裝置100可對晶片210與透光基板220之間的對位狀況進行檢測。第一檢測單元110係對應於晶片210來設置,且可穿透過晶片210來擷取晶片對準標記211的位置。As shown in FIG. 1 , the alignment detecting apparatus 100 of the present embodiment includes a first detecting unit 110 , a second detecting unit 120 , a processing unit 130 , and a registration adjusting device 140 . Before the wafer 210 is bonded to the transparent substrate 220, first, the wafer 210 and the transparent substrate 220 are aligned, and the alignment adjusting device 140 of the alignment detecting device 100 can suck (or clamp) and position the wafer 210. Above the transparent substrate 220, at this time, the wafer alignment mark 211 is opposite to the substrate alignment mark 221, and the alignment detecting device 100 can detect the alignment condition between the wafer 210 and the transparent substrate 220. The first detecting unit 110 is disposed corresponding to the wafer 210 and can penetrate the wafer 210 to capture the position of the wafer alignment mark 211.
在本實施例中,第一檢測單元110為紅外線影像擷取單元,例如紅外線電荷耦合元件(Infrared Charge-coupled Device;IR CCD)、紅外線攝影機或紅外線照相機,其可穿透過晶片210來擷取晶片對準標記211的相關影像資料,以取得晶片對準標記211的位置。此時,第一檢測單元110可設有顯微鏡111和紅外線光源112,紅外線光源112係用以提供紅外線光至晶片對準標記211,以產生供顯微鏡111擷取的影像,顯微鏡111係用以傳送和調整紅外線光的行進路徑。In this embodiment, the first detecting unit 110 is an infrared image capturing unit, such as an infrared charge-coupled device (IR CCD), an infrared camera or an infrared camera, which can penetrate the wafer 210 to capture the wafer. The associated image material of the mark 211 is aligned to obtain the position of the wafer alignment mark 211. At this time, the first detecting unit 110 may be provided with a microscope 111 and an infrared light source 112 for supplying infrared light to the wafer alignment mark 211 to generate an image for the microscope 111, and the microscope 111 is for transmitting And adjust the travel path of infrared light.
如圖1所示,第二檢測單元120係對應於透光基板220來設置,且可穿透過透光基板220來擷取基板對準標記221的位置。在本實施例中,第二檢測單元120為影像擷取單元,例如電荷耦合元件(Charge-coupled Device;CCD)、攝影機或照相機,其可穿透過透光基板220來擷取基板對準標記221的相關影像資料,以取得基板對準標記221的位置。此時,第二檢測單元120可設有顯微鏡121和光源122,光源122係用以提供可見光至基板對準標記221,以產生供顯微鏡121擷取的影像,顯微鏡121係用以傳送和調整可見光的行進路徑。As shown in FIG. 1 , the second detecting unit 120 is disposed corresponding to the transparent substrate 220 and can penetrate the transparent substrate 220 to capture the position of the substrate alignment mark 221 . In this embodiment, the second detecting unit 120 is an image capturing unit, such as a charge-coupled device (CCD), a camera or a camera, which can penetrate the transparent substrate 220 to capture the substrate alignment mark 221 Related image data to obtain the position of the substrate alignment mark 221 . At this time, the second detecting unit 120 may be provided with a microscope 121 for providing visible light to the substrate alignment mark 221 to generate an image for the microscope 121, and a light source 122 for transmitting and adjusting visible light. The path of travel.
如圖1所示,處理單元130係電性連接於第一檢測單元110和第二檢測單元120,用以處理第一檢測單元110和第二檢測單元120的檢測結果(資料),並可比對晶片對準標記211的位置與基板對準標記221的位置,以檢測晶片對準標記211是否對準於基板對準標記221,或者可估算晶片對準標記211與基板對準標記221之間的對位偏移量。其中,處理單元130例如為可程式控制器(PLC)、單晶片微處理機(MCU)、中央處理器(CPU)、嵌入式系統、可程式邏輯陣列、電腦或上述任意組合。As shown in FIG. 1, the processing unit 130 is electrically connected to the first detecting unit 110 and the second detecting unit 120 for processing the detection results (data) of the first detecting unit 110 and the second detecting unit 120, and can be compared. The position of the wafer alignment mark 211 and the position of the substrate alignment mark 221 to detect whether the wafer alignment mark 211 is aligned with the substrate alignment mark 221, or between the wafer alignment mark 211 and the substrate alignment mark 221 can be estimated. The offset of the alignment. The processing unit 130 is, for example, a programmable controller (PLC), a single-chip microprocessor (MCU), a central processing unit (CPU), an embedded system, a programmable logic array, a computer, or any combination thereof.
如圖1所示,對位調整裝置140係電性連接於處理單元130,用以根據處理單元130所得到之晶片對準標記211與基板對準標記221的位置比對結果(對位偏移量),來調整晶片210與透光基板220之間的相對位置。在一實施例中,對位調整裝置140例如為機械手臂或夾持機構,用以調整晶片210與透光基板220的位置。As shown in FIG. 1 , the alignment adjusting device 140 is electrically connected to the processing unit 130 for comparing the position of the wafer alignment mark 211 and the substrate alignment mark 221 obtained by the processing unit 130 (alignment offset) The amount of relative position between the wafer 210 and the transparent substrate 220 is adjusted. In one embodiment, the alignment adjustment device 140 is, for example, a robot arm or a clamping mechanism for adjusting the position of the wafer 210 and the transparent substrate 220.
請參照圖3,其繪示依照本發明之第一實施例之對位檢測方法的方法流程圖。當進行本實施例的對位檢測方法時,首先,提供晶片210(步驟301),其中晶片210具有晶片對準標記211。接著,提供透光基板220(步驟302),其中透光基板220設有基板對準標記221。Referring to FIG. 3, a flow chart of a method for aligning a bit according to a first embodiment of the present invention is shown. When the alignment detecting method of the present embodiment is performed, first, the wafer 210 is provided (step 301), in which the wafer 210 has the wafer alignment mark 211. Next, a transparent substrate 220 is provided (step 302), wherein the transparent substrate 220 is provided with a substrate alignment mark 221 .
接著,如圖1和圖3所示,利用第一檢測單元110來穿透過晶片210,而擷取晶片對準標記211的位置(步驟303)。在本實施例中,第一檢測單元110例如紅外線影像擷取單元,晶片210例如具有矽材料或成份,由於紅外線對於矽材料具有穿透性,因而第一檢測單元110可穿透過晶片210來擷取晶片對準標記211的位置。且利用第二檢測單元120來穿透過透光基板220,而擷取基板對準標記221的位置(步驟304)。在本實施例中,第二檢測單元120例如為影像擷取單元,透光基板220例如為玻璃基板,因而第二檢測單元120可穿透過透光基板220來擷取基板對準標記221的位置。Next, as shown in FIGS. 1 and 3, the first detecting unit 110 is used to penetrate the wafer 210, and the position of the wafer alignment mark 211 is taken (step 303). In this embodiment, the first detecting unit 110 is, for example, an infrared image capturing unit, and the wafer 210 has, for example, a germanium material or a component. Since the infrared light is transparent to the germanium material, the first detecting unit 110 can penetrate the wafer 210. The position of the wafer alignment mark 211 is taken. And the second detecting unit 120 is used to penetrate the transparent substrate 220 to capture the position of the substrate alignment mark 221 (step 304). In this embodiment, the second detecting unit 120 is, for example, an image capturing unit, and the transparent substrate 220 is, for example, a glass substrate. Therefore, the second detecting unit 120 can penetrate the transparent substrate 220 to capture the position of the substrate alignment mark 221 . .
如圖1所示,在本實施例中,當晶片210對位於透光基板220上時,第一檢測單元110可設置於晶片210的一側,第二檢測單元120可設置於透光基板220的一側,且第一檢測單元110和第二檢測單元120可同時或依任意順序來分別取得晶片 對準標記211的位置和基板對準標記221的位置。As shown in FIG. 1 , in the embodiment, when the wafer 210 is disposed on the transparent substrate 220 , the first detecting unit 110 may be disposed on one side of the wafer 210 , and the second detecting unit 120 may be disposed on the transparent substrate 220 . One side, and the first detecting unit 110 and the second detecting unit 120 can respectively acquire the wafers simultaneously or in any order. The position of the alignment mark 211 and the position of the substrate alignment mark 221 are aligned.
如圖1和圖3所示,接著,比對晶片對準標記211的位置與基板對準標記221的位置(步驟305)。對位檢測裝置100的處理單元130可根據晶片對準標記211的位置和基板對準標記221的位置來進行比對,以檢測晶片對準標記211是否對準於基板對準標記221,因而可檢測晶片210是否準確地對位於透光基板220上;或者,此步驟306可用以估算晶片對準標記211與基板對準標記221之間的對位偏移量。As shown in FIGS. 1 and 3, next, the position of the wafer alignment mark 211 is aligned with the position of the substrate alignment mark 221 (step 305). The processing unit 130 of the alignment detecting device 100 can perform an alignment according to the position of the wafer alignment mark 211 and the position of the substrate alignment mark 221 to detect whether the wafer alignment mark 211 is aligned with the substrate alignment mark 221, and thus Detecting whether the wafer 210 is accurately positioned on the light-transmissive substrate 220; alternatively, this step 306 can be used to estimate the amount of alignment offset between the wafer alignment mark 211 and the substrate alignment mark 221 .
如圖1和圖3所示,接著,根據晶片對準標記211與基板對準標記221的位置比對結果來調整晶片210與透光基板220之間的相對位置(步驟306),以對位晶片210於透光基板220上。對位檢測裝置100的對位調整裝置140可根據處理單元130的比對結果來調整晶片210與透光基板220之間的相對位置,藉以使晶片210準確地對位於透光基板220上。As shown in FIG. 1 and FIG. 3, next, the relative position between the wafer 210 and the transparent substrate 220 is adjusted according to the position alignment result of the wafer alignment mark 211 and the substrate alignment mark 221 (step 306). The wafer 210 is on the light transmissive substrate 220. The alignment adjusting device 140 of the alignment detecting device 100 can adjust the relative position between the wafer 210 and the transparent substrate 220 according to the comparison result of the processing unit 130, so that the wafer 210 is accurately positioned on the transparent substrate 220.
因此,本實施例的對位檢測方法和對位檢測裝置100可準確地對位晶片210於透光基板220上。Therefore, the alignment detecting method and the alignment detecting device 100 of the present embodiment can accurately align the wafer 210 on the transparent substrate 220.
請參照圖4和圖5,圖4繪示依照本發明之第二實施例之對位檢測裝置在預壓時的側面示意圖,圖5繪示依照本發明之第二實施例之對位檢測裝置以及晶片固定於透光基板上的側面示意圖。在第二實施例中,對位檢測裝置100更包含一預壓頭150,用以預壓(假壓)晶片210於透光基板220上,以初步固定晶片210於透光基板220上。在第二實施例中,對位檢測裝置100可包含一本壓頭(未繪示)以穩固地固定晶片210於透光基板220上。在預壓步驟後,可再進行本壓步驟。或者,亦可藉由本壓步驟來取代預壓步驟,以穩固地固定晶片210於透光 基板220上。在預壓或本壓步驟中,晶片210與透光基板220之間具有接合層230,用以接合晶片210與透光基板220,此接合層230例如為異方性導電膜(ACF)或其他黏著材料。Please refer to FIG. 4 and FIG. 5. FIG. 4 is a schematic side view of the alignment detecting device according to the second embodiment of the present invention, and FIG. 5 illustrates the alignment detecting device according to the second embodiment of the present invention. And a schematic side view of the wafer fixed on the light transmissive substrate. In the second embodiment, the alignment detecting device 100 further includes a pre-pressing head 150 for pre-pressing (false pressing) the wafer 210 on the transparent substrate 220 to initially fix the wafer 210 on the transparent substrate 220. In the second embodiment, the alignment detecting device 100 may include a pressing head (not shown) to firmly fix the wafer 210 on the transparent substrate 220. After the pre-pressing step, the pressure step can be performed again. Alternatively, the pre-pressing step may be replaced by the pressing step to firmly fix the wafer 210 to light. On the substrate 220. In the pre-pressing or pressing step, the bonding layer 230 is disposed between the wafer 210 and the transparent substrate 220 for bonding the wafer 210 and the transparent substrate 220. The bonding layer 230 is, for example, an anisotropic conductive film (ACF) or the like. Adhesive material.
如圖4和圖5所示,在預壓或本壓步驟中,設備不穩定等原因可能導致晶片210與透光基板220之間產生相對位移情形。因此,在預壓或本壓步驟後,對位檢測裝置100可對晶片210與透光基板220之間的對位狀況進行再次檢測,藉以對設備穩定性進行管控,並可及時維修故障產品。此時,可利用第一檢測單元110來穿透過晶片210,而擷取晶片對準標記211的位置(步驟303)。且利用第二檢測單元120來穿透過透光基板220,而擷取基板對準標記221的位置(步驟304)。接著,比對晶片對準標記211的位置與基板對準標記221的位置(步驟305)。因而可確實地檢測晶片210是否地對位於透光基板220上,或估算晶片210與透光基板220之間的對位偏移量。即使晶片210與透光基板220之間具有接合層230,亦可進行檢測。As shown in FIG. 4 and FIG. 5, in the pre-pressing or pressing step, the device may be unstable or the like may cause a relative displacement between the wafer 210 and the transparent substrate 220. Therefore, after the pre-pressing or the pressing step, the alignment detecting device 100 can re-detect the alignment condition between the wafer 210 and the transparent substrate 220, thereby controlling the stability of the device and repairing the faulty product in time. At this time, the first detecting unit 110 can be used to penetrate the wafer 210 to capture the position of the wafer alignment mark 211 (step 303). And the second detecting unit 120 is used to penetrate the transparent substrate 220 to capture the position of the substrate alignment mark 221 (step 304). Next, the position of the wafer alignment mark 211 is aligned with the position of the substrate alignment mark 221 (step 305). Therefore, it is possible to surely detect whether the wafer 210 is located on the light-transmitting substrate 220 or to estimate the amount of alignment offset between the wafer 210 and the light-transmitting substrate 220. Even if the bonding layer 230 is provided between the wafer 210 and the light-transmitting substrate 220, detection can be performed.
由上述説明可以知道,如圖1所示,在第一實施例中,本發明的對位檢測方法和對位檢測裝置100可用以在預壓步驟之前檢測晶片210是否準確地對位於透光基板220上,並可在預壓步驟前調整晶片210與透光基板220之間的相對位置,此時,步驟303、304及305可在預壓步驟前進行。在第二實施例中,本發明的對位檢測方法和對位檢測裝置100亦可用以在預壓或本壓步驟後檢測晶片210是否準確地對位於透光基板220上,而這些檢測數據(檢測結果)經過處理後可以用來對設備穩定性進行管控,同時能及時發現並維修故障產品。此時,步驟303、304及305可在預壓或本壓步驟後進行。As can be seen from the above description, as shown in FIG. 1, in the first embodiment, the alignment detecting method and the alignment detecting device 100 of the present invention can be used to detect whether the wafer 210 is accurately positioned on the light-transmitting substrate before the pre-pressing step. 220, and the relative position between the wafer 210 and the transparent substrate 220 can be adjusted before the pre-pressing step. At this time, steps 303, 304 and 305 can be performed before the pre-pressing step. In the second embodiment, the alignment detecting method and the alignment detecting device 100 of the present invention can also be used to detect whether the wafer 210 is accurately positioned on the transparent substrate 220 after the pre-pressing or pressing step, and the detection data ( The test results can be used to control the stability of the equipment and to find and repair faulty products in time. At this time, steps 303, 304, and 305 can be performed after the pre-pressing or this pressing step.
請參照圖6,其繪示依照本發明之第三實施例之對位檢測裝置的側面示意圖。在第三實施例中,本發明的對位檢測方法和對位檢測裝置100可用以即時監測晶片210與透光基板220的對位情形。此時,對位檢測裝置100更可設有顯示器160,其電性連接於處理單元130。第一檢測單元110和第二檢測單元120可在晶片210與透光基板220的對位過程中分別擷取晶片對準標記211和基板對準標記221的位置資料(例如影像資料),接著,由處理單元130來即時比對和處理(例如重疊)晶片對準標記211和基板對準標記221的位置資料,並顯示於顯示器160上。因此,使用者或相關人員可由對位檢測裝置100的顯示器160來即時監測晶片210與透光基板220的對位情形。此時,步驟303、304、及305可在對位過程中進行。Please refer to FIG. 6, which is a side view of a alignment detecting device according to a third embodiment of the present invention. In the third embodiment, the alignment detecting method and the alignment detecting device 100 of the present invention can be used to instantly monitor the alignment of the wafer 210 and the transparent substrate 220. At this time, the alignment detecting device 100 may further be provided with a display 160 electrically connected to the processing unit 130. The first detecting unit 110 and the second detecting unit 120 can respectively capture position data (for example, image data) of the wafer alignment mark 211 and the substrate alignment mark 221 during the alignment of the wafer 210 and the transparent substrate 220, and then, The positional data of the wafer alignment mark 211 and the substrate alignment mark 221 are immediately aligned and processed (for example, overlapped) by the processing unit 130 and displayed on the display 160. Therefore, the user or the related person can immediately monitor the alignment of the wafer 210 and the transparent substrate 220 by the display 160 of the alignment detecting device 100. At this point, steps 303, 304, and 305 can be performed during the alignment process.
由上述本發明的各個實施例可知,本發明的對位檢測方法和對位檢測裝置可確實地檢測晶片是否準確地對位於透光基板上,或估算晶片與透光基板之間的對位偏移量,並可自動地根據對位檢測結果來調整晶片與透光基板之間的相對位置,以準確地對位晶片於透光基板上。再者,本發明的對位檢測方法和對位檢測裝置可在預壓步驟前後、壓合步驟前後、對位過程中或其他任意過程中進行對位檢測或監測,而不受晶片與透光基板之間的接合層的影響。According to the various embodiments of the present invention, the alignment detecting method and the alignment detecting device of the present invention can surely detect whether the wafer is accurately positioned on the transparent substrate or estimate the alignment between the wafer and the transparent substrate. The shift amount and the relative position between the wafer and the light-transmitting substrate are automatically adjusted according to the alignment detection result to accurately align the wafer on the light-transmitting substrate. Furthermore, the alignment detecting method and the alignment detecting device of the present invention can perform alignment detection or monitoring before and after the pre-pressing step, before and after the pressing step, during the alignment process, or in any other process, without being affected by the wafer and the light transmission. The effect of the bonding layer between the substrates.
雖然本發明已以各個實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。The present invention has been disclosed in the above embodiments, and is not intended to limit the present invention. Any one skilled in the art can make various modifications and retouchings without departing from the spirit and scope of the present invention. The scope of protection is subject to the definition of the scope of the patent application attached.
100‧‧‧對位檢測裝置100‧‧‧ alignment detection device
110‧‧‧第一檢測單元110‧‧‧First detection unit
111‧‧‧顯微鏡111‧‧‧Microscope
112‧‧‧紅外線光源112‧‧‧Infrared source
120‧‧‧第二檢測單元120‧‧‧Second detection unit
121‧‧‧顯微鏡121‧‧‧Microscope
122‧‧‧光源122‧‧‧Light source
130‧‧‧處理單元130‧‧‧Processing unit
140‧‧‧對位調整裝置140‧‧‧ alignment adjustment device
150‧‧‧預壓頭150‧‧‧Preloading head
160‧‧‧顯示器160‧‧‧ display
210‧‧‧晶片210‧‧‧ wafer
211‧‧‧晶片對準標記211‧‧‧ wafer alignment mark
220‧‧‧透光基板220‧‧‧Transparent substrate
221‧‧‧基板對準標記221‧‧‧Substrate alignment mark
212、222‧‧‧結合面212, 222‧‧‧ joint surface
230‧‧‧接合層230‧‧‧ joint layer
301‧‧‧提供晶片301‧‧‧ Providing wafers
302‧‧‧提供透光基板302‧‧‧ Providing a transparent substrate
303‧‧‧利用第一檢測單元來穿透過晶片,而擷取晶片對準標記的位置303‧‧‧Use the first detection unit to penetrate the wafer and pick up the position of the wafer alignment mark
304‧‧‧利用第二檢測單元來穿透過透光基板,而擷取基板對準標記的位置304‧‧‧Using the second detection unit to penetrate the transparent substrate and picking up the position of the substrate alignment mark
305‧‧‧比對晶片對準標記的位置與基板對準標記的位置305‧‧‧ Align the position of the wafer alignment mark with the position of the substrate alignment mark
306‧‧‧調整晶片與透光基板之間的相對位置306‧‧‧Adjust the relative position between the wafer and the transparent substrate
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之詳細說明如下:圖1係繪示依照本發明之第一實施例之對位檢測裝置的側面示意圖。The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; Side view.
圖2係繪示依照本發明之第一實施例之晶片與部分透光基板的示意圖。2 is a schematic view showing a wafer and a partially transparent substrate according to a first embodiment of the present invention.
圖3係繪示依照本發明之第一實施例之對位檢測方法的方法流程圖。3 is a flow chart showing a method of the alignment detecting method according to the first embodiment of the present invention.
圖4係繪示依照本發明之第二實施例之對位檢測裝置在預壓時的側面示意圖。4 is a side elevational view showing the alignment detecting device in a preloading manner according to a second embodiment of the present invention.
圖5係繪示依照本發明之第二實施例之對位檢測裝置以及晶片固定於透光基板上的側面示意圖。FIG. 5 is a side view showing the alignment detecting device and the wafer fixed on the light-transmitting substrate according to the second embodiment of the present invention.
圖6係繪示依照本發明之第三實施例之對位檢測裝置的側面示意圖6 is a side view showing a alignment detecting device according to a third embodiment of the present invention.
100‧‧‧對位檢測裝置100‧‧‧ alignment detection device
110‧‧‧第一檢測單元110‧‧‧First detection unit
111‧‧‧顯微鏡111‧‧‧Microscope
112‧‧‧紅外線光源112‧‧‧Infrared source
120‧‧‧第二檢測單元120‧‧‧Second detection unit
121‧‧‧顯微鏡121‧‧‧Microscope
122‧‧‧光源122‧‧‧Light source
130‧‧‧處理單元130‧‧‧Processing unit
140‧‧‧對位調整裝置140‧‧‧ alignment adjustment device
210‧‧‧晶片210‧‧‧ wafer
220‧‧‧透光基板220‧‧‧Transparent substrate
212、222‧‧‧結合面212, 222‧‧‧ joint surface
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