九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種四 關於-種具溫度控制功能之四::=特別是有 【先前技術】 :先進石夕晶科技之中，晶圓 :，圓中之電子元件(例如，_)之二表= 低件之性能表現下降以及造居 低k仅介電層與焊料凸 外，、4之#壞。此外，除了機構應力 因此響晶圓中之電子元件之性能表現。 —應力及溫度效應對晶圓中之 表現所造成的影響必須被且滩彡± r ^ 被具肢4寸性化，以利校正電子元 件之“表現。目前傳統之校正系統大多僅以微應力計 二一ens〇r)來量測晶圓中之電子元件在受到機 搆應力％之電阻、電流及電壓等電特性變化。 微應力計主要是利用P型矽或η型矽之電阻、電冷 電:性變化正比於外加應力之特質所製成之： 應力感測凡件。更具體而言，微應力計所佔之面積極小， f可利㈣體電路f程在—般晶片或㈣表面上大 量製=，並且不需昂貴之量測設備即能以非破壞性之方 式去實地量測電子元件内部之應力分佈。在此，量測過 =係由晶片或晶圓表面上之微應力計測得電特性變化 里’並據以推异出電子元件内部之應力分佈。 0503-A33664TWF/hawd〇ng 5 1379070 第1圖係顯示一種採用微應力計進行四點彎曲校正 之習知架構之示意圖。一晶圓10是由兩支點12所承載， • 以及複數個微應力計（未顯示）是被製作於晶圓10之表面 . 上。藉由逐次對晶圓10之兩端施以負載14，並量測微應 力計之電特性值，晶圓10之電特性變化與應力之間的關 係即可被獲得。 請參閱第2圖，一種習知之四點彎曲校正系統1主 要包括有一底座30、一第一支撐架24、一第二支撐架25、 % 一第一負載施加裝置31、一第二負載施加裝置32、一電 子元件特性分析量測儀（例如，一 HP4156儀器）40及兩探 針28。底座30具有複數個定位孔33，以供安裝第一支 撐架24、第二支撐架25、第一負載施加裝置31及第二 負載施加裝置32。第一負載施加裝簟31及第二負載施加 裝置32分別含有複數個負載配重36。第一支撐架24及 第二支撐架25可提供支撐一晶圓20。晶圓20之表面上 製作有複數個微應力計22。微應力計22之表面乃引伸出 ^ 複數個電路接點（未顯示）。在四點彎曲校正系統1之校正 過程中，可依次調整負載配重36之數量以及第一支撐架 24、第二支撐架25、第一負載施加裝置31及第二負載施 加裝置32位於底座30上之位置，以對晶圓20施加不同 負載。同時，以兩探針28接觸某一微應力計22之電路 接點，以量測其電特性值的變化。在此，經由電子元件 特性分析量測儀40之分析，晶圓20上對應於某一微應 力計22位置處之電子元件之電特性變化與應力之間的關 0503-A33664TWF/hawdong 6 ^79070 係即可被獲得。 值得注意的是，由於晶圓2〇等半導體材料之電特性 值亦會因環境溫度變化而不同，故僅在室溫狀態下利用 探針28及微應力計22來量測晶圓20中之電子元件之電 特性變化與應力之間的關係便會不完整。然而，由於電 子元件特性分析量測儀4〇連同探針28之體積通常都很 龐大，故整個四點彎曲校正系統丨無法被置入一般的恆 =箱中來進行校正運作。倘若專為四點彎曲校正系統i 叹计製作一大體積之恆溫箱，則整個校正成本又會大幅 有鐘於此，本發明之目 功能之四點彎曲校正系統， 在電特性校正上之完整性。 的是要提供一種具溫度控制 其可有效提升一半導體構件 【發明内容】 上述之基t上抓用如下所詳述之特徵以為了要解決 件之電特性變化量盥 里以千等骽構 座；-第…加 間的關係，並且包括-底 第支撐木’係以移動 -弟二支撐架，係以移動：又置：繼之上’ 且係相對於該第一支擇牟甘^ °又底座之上，並 二支撐架係承載一半導體構；中：該第：支禮架及該第 成型於該半導體構件之上·— 以及至少一微應力計係 係用以加熱該半導體構 …衣置，連接於該底座， —電源供應器，電性連接於 ong 〇503-A33664TWF/hawdl 7 該加熱裝置；一第一查 置於該底座之上，並且置’係以移動之方式設 第二負載施加裝置，係』 件，用以對該半導體二絲;:該=體構 虹旦巾丨丨/至· 。刀貝戰，电子兀件特 斤里湏J儀，以及兩探針， 析量測儀，並且以可分離之方；=二“子元件特性分 之該微應力計。 離之方式抵接於該半導體構件上 正4 : 據本發明之具溫度控制功能之四點彎曲校 今：产〜；包括-温度感測器及-溫度控制器，其令， ===接:該溫度控制器，並且係抵接 源供應器。 m心係電性連接於該電 第-=發：:=具有複數個定位孔，以及該 第二査哉> μ弟一支撐罙、該第一負載施加裝置及該 之；裳置係以可分離之方式定位於該等定位孔 懂，明之上述目的、特徵和優點能更明顯易 文特舉較佳實施例並配合所附圖式做詳細說明。 【實施方式】 j配合圖式說明本發明之較佳實施例。 彎曲校正：：3圖’本貫施例之具溫度控制功能之四點 二、、· 主要包括有一底座110' —第一支禮架 0503*A33664TWF/hawd〇ng 1379070 L21、一第二支禮架122、一加熱裝置130、一電源供應 ^ 140 '皿度感測器150、—溫度控制器160、一第— 負載施加裝置17卜一第二負載施加裝置172、一電子元 件特性分析量測儀18〇及兩探針19〇。 底座110具有複數個定位孔111。 第支撐架121 以移動之方式設置於底座11〇之 ===來說’第—切架121乃是藉由其兩支柱 a p刀離之方式定位於底i 11〇之定位孔⑴之 中’因而可達成以移動之方式設置於底座ιι〇之上 白〇 c 卜，第，撐架122是以移動之方式設置於底座110之 i ^且弟—支稽架122是相對於第—支撐帛121。更詳 細的來說，第二支撐架122 更汗 分齙彳古4 疋祁由其兩又柱122a以可 座U〇之定位孔111之中，因而可 動之方式設置於底座u。之上的目的。此外， 第—支樓架121及第二支撐架m乃 二導體構件(例如，一咖^ ㈣力4 Μ疋成型於半導體構件w之上。 田加熱=直13〇是連接於底座11〇，並且加熱裝 W(之下表面)’其可以熱輕射之方式 木了牛導體構件W進行加熱。 供電=!ί:Γ是電性連接於加熱裝置130,其可提 使加熱裝置-進行加熱作用。 疋笔性連接於溫度控制器160,並且 〇503-A33664TWF/hawd〇ng 溫度感測器150是抵接於半導 測器150可用來感測半導體 在此，皿度感 千¥紅構件W之溫度，並將所咸測 到之溫度訊號傳送至溫度控制1 16〇之中。 ^ 推诚皿度控心16G疋電性連接於電源供應器14〇,並可 根據溫度感測器150所傳逆 八 器⑷對加熱裝置13/之;^出度訊編制⑽供應 110之^負載t加一裝置171是以移動之方式設置於底座 件施加^ 171是抵接於半導體構 =(之上表面），以對㈣體構件W施加負載。更詳細 ==負載施加裝置171具有兩支柱171a及複數 個負載配重171b，第一g4壯„„ x L 乐員载鈀加裝置Π1乃是藉由其兩 又在心以可分離之方式^位於底座no之定位孔lu 之中’因而可達成以移動之方式設置於底座ιι〇之上的 目的。 第二負載施加裝置172是以移動之方式設置於底座 110之上’並且第二負載施加裝i 172亦是抵接於半導體 構件W(之上表面），以對該半導體構件％施加負載。更 詳細的來說，第二㈣施加裝置172具有兩支柱1723及 禝數個負載配重172bH載施加裝置172乃是藉由 其兩支柱172a以可分離之方式定位於底i㈣之定位孔 111之中，目而可達成以移動之方式設置於底請之上 的目的。此外，在本實施例之中，第一支撐架i2i及第 二支撐架122乃是介於第—負載施加裝置171與第二負 载施加裝置172之間，如此即可達成對半導體構件w進 0503 - A33 664TWF/ha wd ong 10 行四點彎曲之作用。 (例如，=;9:儀是二連 方式=r_:上之:==可分離之 ‘導體構件能:四二曲校正系統1⑼對半 可以八幻 裝置172位於底座110上之位置 別被調整’以及第—負载施加裝置叫 :P之數量及第二負載施加裝置172之負載配重172b 機^ 依次破調整，以對半導體構件w施加不同的 '搆…力。在另一方面，電源供應器140可輸送電力至 …裝且130 ’以使加熱裝置13〇加熱半導體構件w。 此，一操作者可經由溫度控制器16〇來設定半導體構 件W上所欲達成之溫度’並藉由溫度感測器15〇所感測 到之溫度來控制電源供應器刚對加熱裝置130之電力 輸出。接#，操作者可以兩探針190抵接於半導體構件 w上之任一微應力計M(之電路接點）。此時，經由電子 元件特性分析量測儀〗80之分析，在一特定溫度下，半 導體構件W上對應於某一微應力計Μ位置處之電子元件 之電特性變化與應力之間的關係即可被獲得。 如上所述，在依序對半導體構件W施加不同的機構 應力以及在半導體構件W處於不同的溫度條件下，以兩 探針190分別量測所有微應力計μ之電特性值的變化， 0503-A33664TWF/hawdong 11 1379070 則半導體構件W上對應於所有微應力計Μ位置處之電子 元件之電特性變化與應力之間的關係即可被完整獲得。 .綜上所述，利用本發明所揭露之具溫度控制功能之 四點彎曲校正系統，一半導體構件在電特性校正上之完 整性可以被有效提升。 雖然本發明已以較佳·實施例揭露於上，然其並非用 以限定本發明，.任何熟習此項技藝者，在不脫離本發明 之精神和範圍.内，當可作些許之更動與潤飾，.因此本發 • 明之保護範圍當視後附之申請專利範圍所界定者為準。 0503-A33664TWF/hawdong 12 ^/y〇7〇 【圖式簡單說明】 之習轉⑽應料奸㈣f曲校正 分解ΐ意2—種s知之13 ”曲校μ統之立肆 第3圖係.顯示本發明之具溫 校正系統之立體分解示意0。 心以四點彎曲Nine, the invention description: [Technical field of the invention] The present invention relates to a four-type temperature control function of the fourth:: = especially [previous technology]: advanced Shi Xijing technology, wafer: The second component of the electronic component (for example, _) in the circle = the performance of the lower part is degraded and the low-k is only the dielectric layer and the solder bump, and the #4 is bad. In addition, in addition to the mechanical stress, the performance of the electronic components in the wafer is affected. - The effects of stress and temperature effects on the performance of the wafer must be 4 inches in order to correct the "performance of electronic components. Currently, most conventional correction systems only use micro stress. Measure the electrical properties of the electronic components in the wafer under the stress of the mechanism, such as resistance, current and voltage. The micro-stress meter mainly uses the resistance of P-type η or η-type 、, electric cooling Electricity: Sexual changes are made in proportion to the stress of external stress: stress sensing parts. More specifically, the surface of the micro-stress meter is small, f-profit (four) body circuit f-processed wafer or (four) surface The mass system is used, and the stress distribution inside the electronic component can be measured in a non-destructive manner without expensive measuring equipment. Here, the measurement is based on the micro stress on the surface of the wafer or wafer. Measure the change in electrical characteristics and to derive the stress distribution inside the electronic component. 0503-A33664TWF/hawd〇ng 5 1379070 Figure 1 shows a schematic diagram of a conventional architecture for four-point bending correction using a micro-stress meter. a wafer 10 is made up of Two fulcrums 12 are carried, and a plurality of micro-stress meters (not shown) are fabricated on the surface of the wafer 10. By applying a load 14 to both ends of the wafer 10 one by one, and measuring the micro-stress meter The electrical characteristic value, the relationship between the electrical characteristic change of the wafer 10 and the stress can be obtained. Referring to FIG. 2, a conventional four-point bending correction system 1 mainly includes a base 30 and a first support frame 24. a second support frame 25, a first load application device 31, a second load application device 32, an electronic component characteristic analysis meter (for example, an HP4156 instrument) 40, and two probes 28. The base 30 has a plurality of positioning holes 33 for mounting the first support frame 24, the second support frame 25, the first load applying device 31 and the second load applying device 32. The first load applying device 31 and the second load applying device 32 respectively A plurality of load weights 36 are included. The first support frame 24 and the second support frame 25 can support a wafer 20. The surface of the wafer 20 is formed with a plurality of micro-stress gauges 22. The surface of the micro-stress gauge 22 is extended. Output ^ multiple circuit contacts (not shown) During the calibration of the four-point bending correction system 1, the number of load weights 36 can be sequentially adjusted and the first support frame 24, the second support frame 25, the first load application device 31, and the second load application device 32 are located on the base. At a position on 30, a different load is applied to the wafer 20. At the same time, the two probes 28 are in contact with the circuit contacts of a micro-stress gauge 22 to measure changes in electrical property values. Here, via electronic component characteristics The analysis of the analytical meter 40 can be obtained on the wafer 20 corresponding to the change in electrical characteristics of the electronic component at the position of a micro-stress gauge 22 and the stress 0503-A33664TWF/hawdong 6 ^79070. It is worth noting that since the electrical property values of semiconductor materials such as wafers 2 are also different due to changes in ambient temperature, the probes 28 and the micro-stress gauges 22 are used to measure the wafers 20 only at room temperature. The relationship between the change in electrical characteristics of electronic components and stress is incomplete. However, since the volume of the electronic component characteristic measuring instrument 4〇 together with the probe 28 is usually very large, the entire four-point bending correction system cannot be placed in a normal constant box to perform the correcting operation. If a large volume of thermostat is specially designed for the four-point bending correction system i, the entire calibration cost will be greatly reduced. The four-point bending correction system of the present invention is complete in electrical characteristic correction. Sex. It is necessary to provide a temperature control which can effectively enhance a semiconductor component. [Summary of the Invention] The above-mentioned base t is characterized by the following detailed description in order to solve the electrical characteristic variation of the component. ;- the first ... plus the relationship between the two, and including - the bottom support wood 'to move - brother two support frame, to move: set: follow the above 'and the system relative to the first choice ^ ° Further on the base, and the two support frames carry a semiconductor structure; the: the first: the banquet and the first molding on the semiconductor member - and at least one micro-stress system for heating the semiconductor structure... a garment, connected to the base, a power supply, electrically connected to the ong 〇 503-A33664TWF/hawdl 7 the heating device; a first check placed on the base, and the set is set to move by A two-load application device is used for the semiconductor second wire; the body structure is a rainbow frame 丨丨/to. Knife and shell war, electronic 特 特 湏 仪 仪 仪 仪 仪 以及 以及 以及 以及 两 两 两 两 两 两 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪 仪The semiconductor component is positive 4: according to the present invention, the four-point bending of the temperature control function: production ~; including - temperature sensor and - temperature controller, which makes, === connection: the temperature controller, And abutting the source supplier. The m-core is electrically connected to the electric first-=fat::= has a plurality of positioning holes, and the second detecting unit>the first supporting device, the first load applying device And the present invention is positioned in a detachable manner in the positioning holes. It is obvious that the above objects, features and advantages can be more clearly described in the preferred embodiment and described in detail with reference to the drawings. MODES OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described with reference to the drawings. Bending correction: 3Fig. 4:2 of the temperature control function of the present embodiment, mainly including a base 110' - the first shelf 0503*A33664TWF/hawd〇ng 1379070 L21, a second shelf 122, a heating device 13 0, a power supply ^ 140 'sense sensor 150, - temperature controller 160, a first - load application device 17 a second load application device 172, an electronic component characteristic analysis measuring instrument 18 and two probes The base 110 has a plurality of positioning holes 111. The first support frame 121 is disposed on the base 11 in a moving manner. === The first cutting frame 121 is separated by a two-pillar ap knife. It is located in the positioning hole (1) of the bottom surface 11', so that it can be disposed on the base ι 〇 〇 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The parent-support frame 122 is opposite to the first support frame 121. In more detail, the second support frame 122 is more sweaty and has a positioning hole 111 which can be seated by the two-column 122a. In addition, the movable frame is disposed on the base u. In addition, the first support frame 121 and the second support frame m are two conductor members (for example, a ceramic device) is formed on the semiconductor member. Above w. Field heating = straight 13 〇 is connected to the base 11 〇, and heating W (lower surface)' The electric conductor member W can be heated in a hot light manner. Power supply =! ί: Γ is electrically connected to the heating device 130, which can improve the heating device - for heating. 疋 pen is connected to the temperature controller 160 And the 〇503-A33664TWF/hawd〇ng temperature sensor 150 is abutted on the semi-conductor 150 and can be used to sense the temperature of the semiconductor here, and the salt is measured. The temperature signal is transmitted to the temperature control 1 16 。. ^ The twentieth degree control core 16G is electrically connected to the power supply 14 〇, and can be connected to the heating device 13/ according to the temperature sensor 150. The output of the signal is added to the base member. The application 171 is abutted on the semiconductor structure (the upper surface) to apply to the (four) body member W. load. More in detail==The load applying device 171 has two pillars 171a and a plurality of load weights 171b, and the first g4 is a shovel-loading device Π1, which is located in a detachable manner by the two In the positioning hole lu of the base no, it can be achieved by moving it on the pedestal. The second load applying means 172 is disposed on the base 110 in a moving manner' and the second load applying means i 172 is also abutted on the semiconductor member W (upper surface) to apply a load to the semiconductor member %. In more detail, the second (four) applying device 172 has two pillars 1723 and a plurality of load weights 172bH. The loading device 172 is detachably positioned by the two pillars 172a at the positioning holes 111 of the bottom i (4). In the meantime, it is possible to achieve the purpose of setting it on the bottom of the mobile. In addition, in the present embodiment, the first support frame i2i and the second support frame 122 are interposed between the first load applying device 171 and the second load applying device 172, so that the semiconductor member w can be made into the 0503. - A33 664TWF/ha wd ong 10 lines of four-point bending. (For example, =; 9: the instrument is a two-connection method = r_: on: == separable 'conductor member can: four or two correction system 1 (9) half can be eight magic device 172 on the base 110 position is not adjusted 'And the first load applying means: the number of P and the load weight 172b of the second load applying means 172 are sequentially adjusted to apply different 'forces' to the semiconductor member w. On the other hand, the power supply The device 140 can deliver power to the device 130' to cause the heating device 13 to heat the semiconductor member w. Thus, an operator can set the temperature to be achieved on the semiconductor member W via the temperature controller 16' and by temperature The temperature sensed by the sensor 15 is used to control the power output of the power supply just to the heating device 130. The operator can contact the two probes 190 against any of the micro-stress meters M on the semiconductor member w. Circuit contact). At this time, through the analysis of the electronic component characteristic analysis meter 80, the electrical characteristic change and stress of the electronic component corresponding to a micro-stress gauge position on the semiconductor member W at a specific temperature The relationship between Obtaining, as described above, sequentially applying different mechanical stresses to the semiconductor member W and measuring the changes in the electrical characteristic values of all the micro-stress gauges μ by the two probes 190 under different temperature conditions of the semiconductor member W, 0503-A33664TWF/hawdong 11 1379070 The relationship between the electrical characteristic change and the stress of the electronic component corresponding to all the micro-stress gauges on the semiconductor component W can be completely obtained. In summary, the present invention is utilized. The four-point bending correction system with temperature control function is disclosed, and the integrity of a semiconductor component in electrical property correction can be effectively improved. Although the invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. In addition, any person skilled in the art can make some changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention is defined by the scope of the appended patent application. 0503-A33664TWF/hawdong 12 ^/y〇7〇 [Simple description of the schema] The practice of turning (10) should be raped (four) f-correction decomposition ΐ meaning 2 - kind of s know 13 "曲校μ FIG 3 based on vertical store display with perspective correction system of the present invention the temperature of the core is bent to 0. a schematic exploded four
主要元件符號說明】 1〜四點彎曲校正系統； 12〜支點； 22、Μ〜微應力計； 25、122〜第二支撐架； 30、110〜底座； 10、20〜晶圓； 14〜負载； 24、121〜第—支撐架，· 28、190〜探針； 31、 171〜第一負載施加襞置； 32、 172〜弟一負載施加裝置；Main component symbol description] 1 ~ four point bending correction system; 12 ~ fulcrum; 22, Μ ~ micro stress meter; 25, 122 ~ second support frame; 30, 110 ~ base; 10, 20 ~ wafer; 24, 121~--support frame, · 28, 190~ probe; 31, 171~ first load application device; 32, 172~ brother-load application device;
33、 111〜定位孔； 36、171b、172b〜負载配重； 40、180〜電子元件特性分析量測儀； 100〜具溫度控制功能之四點彎曲校正系統. 121a、122a、171a、172a〜支柱； 130~加熱裝置； 150〜溫度感測器； W〜半導體構件。 MO〜電源供應器； 160〜溫度控制器； 0503-A33664TWF/Iiawdong J333, 111~ positioning hole; 36, 171b, 172b~ load weight; 40, 180~ electronic component characteristic analysis measuring instrument; 100~ four-point bending correction system with temperature control function. 121a, 122a, 171a, 172a~ Pillar; 130~ heating device; 150~ temperature sensor; W~ semiconductor component. MO ~ power supply; 160 ~ temperature controller; 0503-A33664TWF / Iiawdong J3