JP2012231040A - Temperature calibration apparatus and temperature calibration method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To properly calibrate the temperature of a heat treatment mechanism in a probe device causing a probe to contact with an inspection body with the inspection body adjusted to a predetermined temperature on the heat treatment mechanism and performing electrical characteristic inspection of the inspection body.SOLUTION: A temperature inspection jig 10 of a temperature calibration apparatus has: a processed wafer 70 placed on a placement base; four temperature measuring resistive elements 71 provided on the processed wafer 70 and changing resistance values according to temperature change; and eight contact pads 72 which is provided on the processed wafer 70, electrically connects with the temperature measuring resistive elements 71, and is subject to the contact of a probe during temperature measurement of the processed wafer 70. A control part of the temperature calibration apparatus measures the temperature of the processed wafer 70 on the basis of the resistance values of the temperature measuring resistive elements 71 measured through the contact pads 72 and the probe and adjusts the temperature of the placement base on the basis of the measured temperature of the processed wafer 70.

Description

  The present invention provides a heat treatment mechanism for a probe device that inspects the electrical characteristics of an object to be inspected by bringing the probe into contact with the object to be inspected while the object to be inspected on the heat treatment mechanism is adjusted to a predetermined temperature. And a temperature calibration method using the temperature calibration apparatus. The calibration referred to here means measuring the temperature of the heat treatment mechanism and adjusting the temperature of the heat treatment mechanism to a desired value.

  Inspection of electrical characteristics of devices such as ICs and LSIs formed on a semiconductor wafer (hereinafter referred to as “wafer”) is performed using, for example, a probe device having a probe card and a mounting table for holding the wafer. Is called. The probe card is usually provided with a plurality of probes that are in contact with the electrode pads of the device on the wafer, contactors that support these probes on the lower surface, and a circuit board that is provided on the upper surface side of the contactor and sends an electrical signal for inspection to each probe. Etc. In addition, for example, a heater for adjusting the wafer to a predetermined temperature is provided inside the mounting table. The device on the wafer can be inspected by sending an electrical signal from the circuit board to each probe in a state where the wafer on the mounting table is adjusted to a predetermined temperature and each probe is in contact with each electrode pad of the wafer. Has been done. This is for confirming whether the device operates properly in a predetermined temperature band.

  In order to appropriately inspect the electrical characteristics of such a device, it is necessary to appropriately adjust the temperature of the wafer on the mounting table described above. Therefore, conventionally, it has been proposed to use a probe card including a characteristic measurement probe for inspecting the electrical characteristics of a device and a temperature measurement probe for measuring the temperature of the device. At the time of inspection, the characteristic measurement probe is brought into contact with the wafer, and the temperature measurement probe is brought into contact with the wafer. Then, the temperature of the device is measured while inspecting the electrical characteristics of the device formed on the wafer. And based on this measured temperature, the temperature of a mounting base (heater) is adjusted (patent document 1).

JP 2003-273176 A

  By the way, in recent years, since the pattern of the device has been miniaturized, the electrode pads are miniaturized and the interval between the electrode pads is narrowed. Further, since the wafer itself is also increased in size, the number of electrode pads formed on the wafer is greatly increased. Accordingly, it is necessary to provide a very large number of characteristic measurement probes on the probe card. Under such circumstances, since the surplus space is small in the probe card, it may be difficult in practice to provide a probe for temperature measurement on the probe card as in Patent Document 1 described above.

  In addition, when the method disclosed in Patent Document 1 described above is used, since the inspection of the electrical characteristics of the device and the temperature measurement are performed simultaneously, the inspection time may be long. That is, when the temperature of the mounting table is adjusted based on the temperature measurement result and the device is inspected on the temperature-controlled mounting table, the electrical characteristics of the device are inspected only for the time for adjusting the temperature of the mounting table. It takes a long time to do.

  The present invention has been made in view of the above points, and in a state in which the object to be inspected on the heat treatment mechanism is adjusted to a predetermined temperature, the probe is brought into contact with the object to be inspected and the electrical characteristics of the object to be inspected are determined. An object of the present invention is to appropriately calibrate the temperature of the heat treatment mechanism in a probe apparatus for performing an inspection.

  In order to achieve the above object, the present invention inspects the electrical characteristics of an object to be inspected by bringing the probe into contact with the object to be inspected while adjusting the object to be inspected on the heat treatment mechanism to a predetermined temperature. A temperature calibration device for calibrating the temperature of the heat treatment mechanism with respect to the probe device, the substrate placed on the heat treatment mechanism, and provided on the substrate, the resistance value changing according to the temperature change And a controller that measures the temperature of the substrate based on the resistance value of the resistance temperature detector measured through the probe. The controller may adjust the temperature of the heat treatment mechanism based on the measured temperature of the substrate.

  According to the present invention, first, the probe is brought into contact with the contact pad on the substrate placed on the heat treatment mechanism, and the resistance value of the resistance temperature detector is measured through the contact pad and the probe. Next, based on the measured resistance value of the resistance temperature detector, the temperature of the substrate is measured. The temperature of the heat treatment mechanism can be adjusted based on the measured substrate temperature. Thus, according to the present invention, it is possible to appropriately measure the temperature of the substrate on the heat treatment mechanism and feedback control the temperature of the heat treatment mechanism. Since the temperature of the object to be inspected can be appropriately adjusted by the heat-control mechanism that is feedback-controlled, the electrical characteristics of the object to be inspected can also be appropriately inspected. In such a case, since the temperature of the heat treatment mechanism is adjusted using a substrate different from the object to be inspected for electrical characteristics, the inspection of the object to be inspected and the temperature adjustment of the heat treatment mechanism can be performed in separate steps. it can. Therefore, the inspection time of the object to be inspected can be shortened compared to the conventional case. Moreover, the temperature of the substrate can be measured without changing the configuration of the existing probe device as in the prior art, that is, using the existing probe. For this reason, it is not necessary to provide another probe in the probe apparatus as in the prior art, and the present invention can cope with, for example, recent miniaturization of device patterns.

  A plurality of the resistance temperature detectors may form a Wheatstone bridge circuit, and the control unit may adjust the temperature of the heat treatment mechanism so that the Wheatstone bridge circuit is in an equilibrium state. Note that the Wheatstone bridge circuit is in a balanced state means a state where the potential difference between the midpoints of the Wheatstone bridge circuit becomes zero, that is, a state where the offset voltage of the Wheatstone bridge circuit becomes zero.

  The controller may adjust the temperature of the heat treatment mechanism so that a current value in the Wheatstone bridge circuit becomes a predetermined value.

  A plurality of Wheatstone bridge circuits may be formed, and the controller may adjust the temperature of the heat treatment mechanism so that the current values in the plurality of Wheatstone bridge circuits are equal.

  The controller may adjust the temperature of the heat treatment mechanism by measuring the temperature of the substrate for each predetermined region of the substrate.

  The controller may measure the temperature of the entire substrate and adjust the temperature of the heat treatment mechanism.

  The heat treatment mechanism may be divided into a plurality of regions, and the temperature may be adjustable for each region.

  The temperature calibration device includes a plurality of contact pads provided on the substrate, electrically connected to the resistance temperature detector, and in contact with the probe when measuring the temperature of the substrate. The resistance value may be measured via the contact pad and the probe.

  The contact pad may be disposed at a position where the probe contacts the object to be inspected when inspecting the electrical characteristics of the object to be inspected.

  The contact pad may be arranged at a position where the resistance temperature detector is not affected by a temperature change when the probe contacts.

  According to another aspect of the present invention, there is provided a probe apparatus for inspecting an electrical characteristic of an inspection object by bringing the inspection object on the heat treatment mechanism into a predetermined temperature and bringing the probe into contact with the inspection object. A temperature calibration method for calibrating the temperature of the heat treatment mechanism using a temperature calibration device, wherein the substrate is placed on the heat treatment mechanism, and the resistance value changes according to the temperature change. A first step of measuring a resistance value of the resistance temperature detector via the probe using the temperature calibration device comprising a plurality of resistance temperature detectors, and the measured resistance temperature detector And a second step of measuring the temperature of the substrate based on a resistance value of the body.

  The temperature calibration method may include a third step of adjusting the temperature of the heat treatment mechanism based on the measured temperature of the substrate.

  A plurality of the resistance temperature detectors may form a Wheatstone bridge circuit, and in the third step, the temperature of the heat treatment mechanism may be adjusted so that the Wheatstone bridge circuit is in an equilibrium state.

  In the third step, the temperature of the heat treatment mechanism may be adjusted so that a current value in the Wheatstone bridge circuit becomes a predetermined value.

  A plurality of Wheatstone bridge circuits may be formed, and in the third step, the temperature of the heat treatment mechanism may be adjusted so that the current values in the plurality of Wheatstone bridge circuits are equal.

  The first step, the second step, and the third step may be performed for each predetermined region of the substrate.

  The first step, the second step, and the third step may be performed collectively on the entire substrate.

  The heat treatment mechanism may be partitioned into a plurality of regions, and the temperature can be adjusted for each region. In the third step, the temperature of the heat treatment mechanism may be adjusted for each region.

  The temperature calibration device includes a plurality of contact pads provided on the substrate, electrically connected to the resistance temperature detector, and in contact with the probe when measuring the temperature of the substrate. The probe may be brought into contact with a contact pad on a substrate placed on the heat treatment mechanism, and the resistance value of the resistance temperature detector may be measured via the contact pad and the probe.

  The contact pad may be disposed at a position where the probe contacts the object to be inspected when inspecting the electrical characteristics of the object to be inspected.

  The contact pad may be arranged at a position where the resistance temperature detector is not affected by a temperature change when the probe contacts.

  ADVANTAGE OF THE INVENTION According to this invention, in the probe apparatus which test | inspects the electrical property of to-be-inspected object, the temperature of a heat processing mechanism can be calibrated appropriately.

It is explanatory drawing which shows the outline of a structure of the temperature calibration apparatus concerning this Embodiment, and a probe apparatus. It is a top view which shows the outline of a structure of a mounting base. It is a top view which shows the outline of a structure of a temperature test jig | tool. It is a side view which shows the outline of a structure of a temperature test jig | tool. It is a top view which shows the outline of a structure of the temperature test jig | tool concerning other embodiment. It is explanatory drawing which shows the outline of a structure of a Wheatstone bridge circuit. It is a top view which shows the outline of a structure of the temperature test jig | tool concerning other embodiment. It is explanatory drawing which shows arrangement | positioning of the Wheatstone bridge circuit concerning other embodiment. It is a top view which shows the outline of a structure of the temperature test jig | tool concerning other embodiment. It is a top view which shows the outline of a structure of the temperature test jig | tool concerning other embodiment. It is a side view which shows the outline of a structure of the temperature test jig | tool concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is an explanatory diagram showing an outline of the configuration of a temperature calibration apparatus 1 according to the present embodiment and a probe apparatus 2 to which the temperature calibration apparatus 1 is applied. The temperature calibration device 1 has a temperature inspection jig 10 that is mounted on the mounting table 21 by adjusting the temperature of the mounting table 21 as a heat treatment mechanism to be described later with respect to the probe device 2. In addition, the probe apparatus 2 inspects the electrical characteristics of the devices on the wafer W in a state where the wafer W as the inspection object on the mounting table 21 is adjusted to a predetermined temperature.

  The probe device 2 includes, for example, a probe card 20, a mounting table 21 that holds the temperature inspection jig 10 or the wafer W by suction, a moving mechanism 22 that moves the mounting table 21, a tester 23, and the like.

  The probe card 20 includes, for example, a plurality of probes 30, a probe support plate 31 that supports the probes 30 on the lower surface, and a printed wiring board 32 that is attached to the upper surface side of the probe support plate 31.

  The plurality of probes 30 are arranged corresponding to (opposed to) contact pads 72 described later of the temperature inspection jig 10. Although the probe 30 can take various shapes, in this embodiment, for example, it has a cantilever shape that is cantilevered by the probe support plate 31. The probe 30 is made of, for example, an alloy such as nickel, a Ni—Co alloy, a Ni—Mn alloy, W, Pd, a BeCu alloy, or an Au alloy. Further, the probe 30 may be plated with a noble metal plating material, an alloy of the noble metal plating material, or other metal plating material on the surface of the base material.

  The probe support plate 31 is formed in a square plate shape, for example. The probe support plate 31 is made of a low thermal expansion material such as ceramics.

  The printed wiring board 32 is electrically connected to the tester 23. Inside the printed wiring board 32, wiring through which an electrical signal for inspection from the tester 23 flows is formed, and on the lower surface of the printed wiring board 32, a plurality of terminals 33 of the wiring are formed.

  The mounting table 21 is formed in a substantially disk shape having a horizontal upper surface. A suction port (not shown) for sucking the temperature inspection jig 10 or the wafer W is provided on the upper surface of the mounting table 21. By the suction from the suction port, the temperature inspection jig 10 or the wafer W is sucked and held.

As shown in FIG. 2, the mounting table 21 is divided into a plurality of, for example, four heat treatment regions R ₁ , R ₂ , R ₃ , and R ₄ . The mounting table 21 is divided into four equal parts in a plan view, for example. That is, the heat treatment regions R ₁ , R ₂ , R ₃ , and R ₄ each have a fan shape with a central angle of 90 degrees.

Each of the heat treatment regions R _{1 to} R ₄ of the mounting table 21 has a built-in heater 40 that generates heat when supplied with electricity, and can be heated for each heat treatment region R _{1 to} R ₄ . The amount of heat generated by the heater 40 in each of the heat treatment regions R _{1 to} R ₄ is adjusted by the control unit 100 described later. Controller 100 can adjust the heating value of the heater 40, can control the temperature of each heat treatment region R ₁ to R ₄ to a predetermined temperature.

  The moving mechanism 22 includes, for example, a lifting / lowering driving unit 50 such as a cylinder that lifts the mounting table 21 in the vertical direction, and a horizontal driving unit 51 that moves the lifting / lowering driving unit 50 in two directions orthogonal to the horizontal direction (X direction and Y direction). It has. Thereby, the temperature inspection jig 10 or the wafer W held on the mounting table 21 is three-dimensionally moved, and the contact pads 72 of the temperature inspection jig 10 or the respective electrode pads (not shown) on the wafer W are moved. The specific probe 30 located above can be brought into contact.

  Next, the configuration of the temperature calibration device 1 will be described. The temperature calibration device 1 includes a temperature inspection jig 10 that is placed on a placement table 21 as shown in FIG. The temperature inspection jig 10 has a processing target wafer 70 as a substrate as shown in FIG. The wafer 70 to be processed is made of the same material as the wafer W, for example, silicon, and has the same planar shape as the wafer W. In order to measure an accurate temperature, it is desirable that the processing target wafer 70 is the same as the actual wafer W. However, the present invention is not limited to this, and the shape, material, and the like may be different.

  A plurality of, for example, four resistance thermometers 71, a plurality of, for example, eight contact pads 72, and a wiring 73 that electrically connects the resistance thermometer 71 and the contact pads 72 are formed on the wafer 70 to be processed. Yes. The resistance temperature detector 71, the contact pad 72, and the wiring 73 are collectively formed by performing a photolithography process on the wafer 70 to be processed, for example. When the wafer 70 to be processed is a conductor, the surface may be sufficiently insulated before these elements are formed.

  The resistance temperature detector 71 is a resistor whose resistance value changes with temperature change, and for example, an RTD (Resistance Temperature Detector) or a thermistor is used. The resistance temperature detector 71 is disposed at a temperature measurement point of the wafer 70 to be processed. The arrangement and number of the resistance temperature detectors 71 are not limited to the present embodiment and can be arbitrarily set.

  As shown in FIG. 4, the probe 30 contacts the contact pad 72 when the temperature of the mounting table 21 is adjusted. The contact pad 72 is made of a conductive material such as aluminum. As shown in FIG. 3, two contact pads 72 are provided for one resistance temperature detector 71. That is, the resistance value of the resistance temperature detector 71 is measured by a so-called two-wire connection type. One contact pad 72 functions as a positive electrode, and the other contact pad 72 functions as a negative electrode.

  For example, aluminum is used for the wiring 73 in the same manner as the contact pad 72.

  Moreover, the temperature calibration apparatus 1 has the control part 100 provided in the exterior of the probe apparatus 2, as shown in FIG. The control unit 100 is, for example, a computer, and includes a measurement circuit including, for example, a processor, a memory, an amplifier, a switch, and the like. With this measurement circuit, the control unit 100 can measure the resistance value of the resistance temperature detector 71 and the like. Further, the control unit 100 has a program storage unit (not shown). The program storage unit stores a program for adjusting the temperature of the mounting table 21 (the amount of heat generated by the heater 40) based on the resistance value of the resistance temperature detector 71, for example. The program is recorded on a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), or memory card. Or installed in the control unit 100 from the storage medium. In addition, when the probe device 2 itself has a temperature adjustment mechanism that adjusts the temperature of the mounting table 21, the control unit 100 may control the temperature adjustment mechanism based on the measured temperature. Good. What is necessary is just to respond | correspond suitably according to the function which the probe apparatus 2 has.

  Next, a method for adjusting the temperature of the mounting table 21 of the probe apparatus 2 using the temperature calibration apparatus 1 configured as described above will be described.

First, the temperature inspection jig 10 is carried into the probe device 2 and sucked and held on the mounting table 21. At this time, the heat treatment region R ₁ to R ₄ of the mounting table 21 is adjusted to a predetermined initial temperature by the controller 100. Then, the wafer 70 to be processed of the temperature inspection jig 10 mounted on the mounting table 21 is heated, and the temperature of the wafer 70 to be processed is adjusted.

  Thereafter, the mounting table 21 is moved in the horizontal direction by the moving mechanism 22 and the position of the temperature inspection jig 10 is adjusted. Subsequently, the mounting table 21 rises and the probes 30 of the probe card 20 come into contact with the contact pads 72 of the temperature inspection jig 10. At this time, the probe 30 contacts all the contact pads 72 of the wafer 70 to be processed. Then, the measurement results of the resistance values of all the resistance temperature detectors 71 are output from the contact pad 72 to the control unit 100 via the probe 30.

Next, the control unit 100 measures the temperature of the processing target wafer 70 based on the measured resistance value of the resistance temperature detector 71. In the present embodiment, the temperature of the processing target wafer 70 is collectively measured. At this time, the in-plane distribution of the temperature of the processing target wafer 70 may be visualized by a mapping function of the probe device 2. Then, based on the measured temperature of the processing target wafer 70, the temperature of the mounting table 21 is adjusted so that the temperature of the processing target wafer 70 becomes a predetermined temperature. At this time, the control unit 100 adjusts the temperature of the mounting table 21 for each heat treatment region _R 1 to R _4.

  When the temperature of the mounting table 21 is adjusted as described above, the temperature inspection jig 10 is unloaded from the probe device 2. Thus, the temperature of the mounting table 21 is adjusted.

  If the resistance values of all the temperature measuring resistors 71 (the temperature of the wafer 70 to be processed) cannot be set to a predetermined value by one temperature adjustment, the temperature adjustment is performed a plurality of times. That is, the heat treatment of the wafer 70 to be processed, the measurement of the resistance value of the resistance temperature detector 71, and the temperature adjustment of the mounting table 21 are repeatedly performed, and the wafer 70 to be processed is uniformly heat-treated at a predetermined temperature.

  According to the above embodiment, the resistance value of the resistance temperature detector 71 is measured by bringing the probe 30 into contact with the contact pad 72 on the processing target wafer 70 mounted on the mounting table 21, and further The temperature of the processing wafer 70 can be measured. Then, the temperature of the mounting table 21 can be adjusted based on the measured temperature of the processing target wafer 70. Thus, according to the present embodiment, the temperature of the processing target wafer 70 on the mounting table 21 can be appropriately measured, and the temperature of the mounting table 21 can be feedback controlled. Since the temperature of the wafer W can be appropriately adjusted by the mounting table 21 that is feedback-controlled, it is possible to appropriately inspect the electrical characteristics of the device of the wafer W.

  In this case, since the temperature of the mounting table 21 is adjusted using a wafer 70 to be processed that is different from the wafer W whose electrical characteristics are to be inspected, the inspection of the wafer W and the temperature adjustment of the mounting table 21 are performed in separate steps. It can be carried out. Therefore, the inspection time of the wafer W can be shortened.

  Further, the temperature of the wafer 70 to be processed can be measured without changing the configuration of the existing probe device 2, that is, using the existing probe 30. For this reason, it is not necessary to provide another probe on the probe card 20, and this embodiment can cope with, for example, the recent miniaturization of device patterns.

  Further, the resistance value of the resistance temperature detector 71 on the wafer 70 to be processed is measured at once, and the temperature of the entire wafer 70 to be processed is measured. Therefore, the temperature of the mounting table 21 can be adjusted efficiently.

Further, the mounting table 21 is partitioned into a plurality of heat treatment region _R 1 to R _4, the heater 40 individually to each heat treatment region _R 1 to R ₄ are built. For this reason, the temperature can be adjusted for each of the heat treatment regions R _{1 to} R _4, and the temperature of the mounting table 21 can be adjusted more strictly.

  In the above embodiment, the probe 30 is brought into contact with the contact pad 72 when measuring the resistance value of the resistance temperature detector 71. However, the probe 30 may be brought into direct contact with the temperature sensing resistor 71. .

In the above embodiment, the resistance value of the resistance temperature detector 71 on the wafer 70 to be processed is collectively measured. However, the resistance value of the resistance temperature detector 71 is determined for each predetermined region of the wafer 70 to be processed. You may measure. That is, in the probe apparatus 2, the wafer W on the mounting table 21 is moved with respect to the probe card 20 and measured in the heat treatment regions R _{1 to} R ₄ . In such a case, the resistance value of the resistance temperature detector 71 can be appropriately measured while utilizing the function of the probe device 2.

  In the above embodiment, two contact pads 72 are connected to one resistance temperature detector 71 and the resistance value of the resistance temperature detector 71 is measured by a so-called two-wire connection type. A 4-wire connection type may be used instead of the formula. In such a case, four contact pads 72 are connected to one resistance temperature detector 71. When the four-wire connection type is used, the resistance value of the resistance temperature detector 71 can be measured more accurately.

  In the temperature inspection jig 10 of the above embodiment, a plurality of Wheatstone bridge circuits 110 may be formed on the processing target wafer 70 as shown in FIG. In the present embodiment, the plurality of Wheatstone bridge circuits 110 are arranged in a staggered manner over substantially the entire surface of the wafer 70 to be processed. Each Wheatstone bridge circuit 110 has a configuration in which the above-described four resistance temperature detectors 71 and four contact pads 72 are electrically connected by wiring 73 as shown in FIGS. 5 and 6.

  As shown in FIG. 6, the four contact pads 72 are arranged at the apex portion in the Wheatstone bridge circuit 110. A pair of contact pads 72 a and 72 a provided at both ends of the two resistance temperature detectors 71 and 71 in series are used to apply a voltage to the Wheatstone bridge circuit 110. A pair of contact pads 72b, 72b provided at the midpoint between the two resistance temperature detectors 71, 71 in series are used to measure the voltage between the contact pads 72b, 72b. That is, the contact pads 72 b and 72 b are used to measure the offset voltage in the Wheatstone bridge circuit 110. Note that the arrows in FIG. 6 indicate the current when a voltage is applied to the Wheatstone bridge circuit 110.

In such a case, a predetermined voltage is applied to the contact pads 72 a and 72 a on the wafer to be processed 70 via the probe 30 with respect to the wafer 70 to be heated. Subsequently, a measurement result signal is output from the contact pads 72 b and 72 b to the control unit 100 via the probe 30. Thus, the control unit 100 measures the offset voltage (voltage between the contact pads 72b and 72b) of the Wheatstone bridge circuit 110. And in the control part 100, the temperature of the mounting base 21 is adjusted so that the offset voltage of the some Wheatstone bridge circuit 110 may become zero. That is, the control unit 100 adjusts the temperature of the mounting table 21 for each of the heat treatment regions R _{1 to} R ₄ so that the offset voltage of the plurality of Wheatstone bridge circuits 110 becomes zero.

  In addition, that the offset voltage of the Wheatstone bridge circuit 110 becomes zero means that the resistance values of the four resistance temperature detectors 71 in the Wheatstone bridge circuit 110 are equal. That is, the temperature of the processing target wafer 70 provided with the Wheatstone bridge circuit 110 becomes uniform. Therefore, when the offset voltage of all Wheatstone bridge circuits 110 becomes zero, the temperature becomes uniform throughout the wafer 70 to be processed.

  According to the present embodiment, the temperature of the mounting table 21 so that the Wheatstone bridge circuit 110 formed on the processing target wafer 70 is in an equilibrium state, that is, the offset voltage in the Wheatstone bridge circuit 110 is zero. Is adjusted. In this case, since the offset voltage becomes zero, the resistance values of the four resistance temperature detectors 71 in the Wheatstone bridge circuit 110, that is, the temperatures of the wafers 70 to be processed measured by the resistance temperature detectors 71 become equal. In addition, since the offset voltage in all the Wheatstone bridge circuits 110 on the processing target wafer 70 becomes zero, the temperatures of the processing target wafers 70 in these Wheatstone bridge circuits 110 become equal. Therefore, according to the present embodiment, the temperature of the mounting table 21 can be appropriately adjusted so that the processing target wafer 70 is uniformly heat-treated in the horizontal plane. In other words, the present embodiment is particularly useful when the temperature of the mounting table 21 is adjusted as long as the in-plane uniformity of the temperature of the processing target wafer 70 can be ensured and absolute temperature adjustment is not necessary. In addition, the set output of the heater 40 is originally worthy of trust, but it is common in actual sites that individuals whose output values vary with time. In such a case, it can be considered that the temperature is sufficiently adjusted when the in-plane uniformity is ensured.

  In addition, since the Wheatstone bridge circuit 110 includes the four resistance temperature detectors 71, the temperature at four locations is measured using a conventional method. Then, the temperature of the mounting table 21 is adjusted using these four parameters. On the other hand, according to the present embodiment, the parameter used for adjusting the temperature of the mounting table 12 is only one of the offset voltages of the Wheatstone bridge circuit 110. Thus, according to the present embodiment, since the number of parameters is small, the temperature of the mounting table 21 can be adjusted with simple control. Therefore, the load applied to the heater 40 of the mounting table 21 can be reduced, and the temperature of the mounting table 21 can be adjusted in a short time.

  Furthermore, in the above embodiment, two contact pads 72 (two wirings 73) are provided for one resistance temperature detector 71. On the other hand, in the Wheatstone bridge circuit 110, four contact pads 72 (four wires 73) are provided for the four resistance temperature detectors 71. Therefore, when the Wheatstone bridge circuit 110 is used as in the present embodiment, the number of contact pads 72 and the number of wirings 73 can be reduced.

  In the above embodiment, the offset voltage in the Wheatstone bridge circuit 110 is used as a parameter for adjusting the temperature of the mounting table 21. However, in addition to the offset voltage, the current value in the Wheatstone bridge circuit 110 may be used. Good.

  In such a case, in the probe device 2, after the heat treatment is performed on the temperature inspection jig 10 mounted on the mounting table 21, in addition to the offset voltage of the Wheatstone bridge circuit 110 in the temperature inspection jig 10, the Wheatstone The current value of the bridge circuit 110 is measured. In the control unit 100, the offset voltage of all the Wheatstone bridge circuits 110 becomes zero, the current value of the Wheatstone bridge 71 becomes a predetermined value, and the current values of all the Wheatstone bridge circuits 110 become equal. The temperature of the mounting table 21 is adjusted.

  According to the present embodiment, the resistance values of the resistance temperature detectors 71 in all the Wheatstone bridge circuits 110 on the processing target wafer 70 can be made equal to a predetermined value. Therefore, the temperature of the mounting table 21 can be adjusted so that the processing target wafer 70 is uniformly heat-treated at a predetermined temperature. Even in such a case, since there are two parameters for adjusting the temperature of the mounting table 21, the offset voltage and current value of the Wheatstone bridge circuit 110, it is possible to adjust the temperature of the mounting table 21 with simpler control than before. Can do.

  In the above embodiment, the control unit 100 may record a table (not shown) indicating the relationship between the current value in the Wheatstone bridge circuit 110 and the temperature of the wafer 70 to be processed, for example. In such a case, the control unit 100 measures the temperature of the wafer 70 to be processed using the table based on the measured current value of the Wheatstone bridge circuit 110. Thereby, the absolute temperature of the to-be-processed wafer 70 after heat processing can be grasped | ascertained.

  In the above embodiment, the plurality of Wheatstone bridge circuits 110 are arranged in a staggered pattern on the wafer 70 to be processed. However, the arrangement of the plurality of Wheatstone bridge circuits 110 is not limited to this. For example, as shown in FIG. 7, a plurality of Wheatstone bridge circuits 110 may be arranged in a lattice pattern on the wafer 70 to be processed. Further, for example, a plurality of Wheatstone bridge circuits 110 are continuously arranged as shown in FIG. 8, and the plurality of Wheatstone bridge circuits 110 are meanderingly arranged on the processing target wafer 70 as shown in FIG. Also good. In any case, based on the offset voltage of the Wheatstone bridge circuit 110 or the offset voltage and current value, the temperature of the mounting table 21 can be adjusted so that the wafer 70 to be processed is uniformly heated.

  In the above embodiment, a plurality of Wheatstone bridge circuits 110 are provided on the wafer 70 to be processed. However, for example, as shown in FIG. 10, a circuit 120 in which these Wheatstone bridge circuits 110 are integrated may be formed. Good. The circuit 120 has a configuration in which a plurality of resistance temperature detectors 71 and a plurality of contact pads 72 are arranged in a grid pattern. That is, in the circuit 120, the plurality of resistance temperature detectors 71 are arranged in parallel. In such a case, the pair of contact pads 72 a and 72 a at the apex of the circuit 120 is used to apply a voltage to the circuit 120.

  In such a case, a predetermined voltage is applied to the contact pads 72 a and 72 a on the processing target wafer 70 via the probe 30 with respect to the processing target wafer 70 after the heat treatment. Subsequently, a measurement result signal is output from the other contact pad 72 to the control unit 100 via the probe 30. In this way, the control unit 100 can measure the resistance value of each resistance temperature detector 71 and can adjust the temperature of the mounting table 21 based on the measured resistance value.

  Further, as compared with the case where two contact pads 72 (two wires 73) are provided for one resistance temperature detector 71 as in the above embodiment, the number of contact pads 72 and the number of wires 73 are reduced. The number can be reduced.

  In the above embodiment, the circuit 120 has the plurality of resistance temperature detectors 71 arranged in parallel, but may be arranged in series. Even in such a case, the temperature of the mounting table 21 can be adjusted, and the number of contact pads 72 and the number of wirings 73 can be reduced.

  In the above embodiment, the contact pad 72 is formed in a size necessary and sufficient for the probe 30 to contact. However, instead of the contact pad 72, the contact pad 72 is formed on the processing target wafer 70 as shown in FIG. A contact pad 130 having a versatile size may be provided. Two contact pads 130 are connected to one resistance temperature detector 71. That is, the resistance value of the resistance temperature detector 71 is measured by a so-called two-wire connection type. One contact pad 130 functions as a positive electrode, and the other contact pad 130 functions as a negative electrode.

  For example, the contact pad 130 is provided at a position where the probe 30 actually contacts when the electrical characteristics of the device on the wafer W are inspected. The position where the probe 30 contacts is, for example, a position 2 mm apart from the resistance temperature detector 71 in the horizontal direction, and this arrangement is the same as the positional relationship between the electrically movable part and the pad in an actual device. In such a case, the temperature of the wafer 70 to be processed can be measured in an environment similar to the actual inspection environment for the wafer W, so that the temperature adjustment of the mounting table 21 can be performed in a state closer to the actual condition.

  Further, for example, the contact pad 130 is provided at a position where the resistance thermometer 71 is not affected by the temperature change when the probe 30 contacts the contact pad 130. The position where the probe 30 contacts is set according to the material of the wafer 70 to be processed, the heat treatment temperature, and the like. For example, silicon having a diameter of 300 mm is used for the wafer 70 to be processed, and when the heat treatment temperature of the wafer 70 to be processed is 150 ° C., the probe 30 contacts so that the resistance temperature detector 71 is not affected by the temperature change. The position is a position spaced 20 mm from the resistance temperature detector 71 in the horizontal direction. For this reason, the contact pad 130 extends at least in the range of 20 mm or more from the resistance temperature detector 71. In such a case, when the probe 30 comes into contact with the contact pad 130, the resistance temperature detector 71 is not affected by the temperature change, that is, the temperature of the processing target wafer 70 does not decrease. Therefore, the temperature of the processing target wafer 70 can be accurately measured.

  As described above, according to the present embodiment, since the contact pad 130 is formed with a versatile size, it is possible to appropriately measure the temperature of the processing target wafer 70 corresponding to various conditions. it can. The shape and arrangement of the contact pads 130 are not limited to the example shown in FIG. 11 and can be arbitrarily changed.

In the above embodiment, the mounting table 21 is partitioned into _four heat treatment regions R _{1 to} R ₄ , but the number thereof can be arbitrarily selected. The shape of the heat treatment region _R 1 to R ₄ of the mounting table 21 can be arbitrarily selected.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

1 temperature calibration device 2 probe apparatus 10 temperature test fixture 20 probe card 21 mounting table 30 probe 40 heater 70 to be treated wafer 71 RTD 72 contact pad 100 control unit 110 Wheatstone bridge 130 contact pads R ₁ to R ₄ heat treatment region W wafer

Claims (22)

The temperature of the heat treatment mechanism is calibrated with respect to a probe device that inspects the electrical characteristics of the inspection object by bringing the probe into contact with the inspection object while the inspection object on the heat treatment mechanism is adjusted to a predetermined temperature. A temperature calibration device for
A substrate placed on the heat treatment mechanism;
A plurality of resistance thermometers provided on the substrate, the resistance value of which varies according to a temperature change;
And a controller that measures the temperature of the substrate based on a resistance value of the resistance temperature detector measured through the probe. The temperature calibration apparatus according to claim 1, wherein the control unit adjusts the temperature of the heat treatment mechanism based on the measured temperature of the substrate. A Wheatstone bridge circuit is formed by the plurality of resistance thermometers,
The temperature calibration apparatus according to claim 2, wherein the control unit adjusts the temperature of the heat treatment mechanism so that the Wheatstone bridge circuit is in an equilibrium state. 4. The temperature calibration device according to claim 3, wherein the controller adjusts the temperature of the heat treatment mechanism so that a current value in the Wheatstone bridge circuit becomes a predetermined value. 5. A plurality of the Wheatstone bridge circuits are formed,
5. The temperature calibration apparatus according to claim 3, wherein the controller adjusts the temperature of the heat treatment mechanism so that current values in the plurality of Wheatstone bridge circuits are equal. 6. The temperature calibration apparatus according to claim 2, wherein the control unit adjusts the temperature of the heat treatment mechanism by measuring the temperature of the substrate for each predetermined region of the substrate. . 6. The temperature calibration apparatus according to claim 2, wherein the control unit measures the temperature of the entire substrate and adjusts the temperature of the heat treatment mechanism. 8. The temperature calibration apparatus according to claim 2, wherein the heat treatment mechanism is divided into a plurality of regions, and the temperature can be adjusted for each of the regions. A plurality of contact pads provided on the substrate, electrically connected to the resistance temperature detector, and in contact with the probe during temperature measurement of the substrate;
The temperature calibration device according to claim 1, wherein the resistance value of the resistance temperature detector is measured through the contact pad and the probe. 10. The temperature calibration apparatus according to claim 9, wherein the contact pad is disposed at a position where the probe contacts the object to be inspected when inspecting an electrical characteristic of the object to be inspected. The temperature calibration device according to claim 9, wherein the contact pad is disposed at a position where the resistance thermometer is not affected by a temperature change when the probe contacts. In a state where the inspection object on the heat treatment mechanism is adjusted to a predetermined temperature, for the probe device that inspects the electrical characteristics of the inspection object by bringing the probe into contact with the inspection object, the temperature calibration device is used. A temperature calibration method for calibrating the temperature of a heat treatment mechanism,
A substrate placed on the heat treatment mechanism;
Using the temperature calibration device that is provided on the substrate and includes a plurality of resistance temperature detectors whose resistance values change according to temperature changes,
A first step of measuring a resistance value of the resistance temperature detector via the probe;
And a second step of measuring the temperature of the substrate based on the measured resistance value of the resistance temperature detector. The temperature calibration method according to claim 12, further comprising a third step of adjusting the temperature of the heat treatment mechanism based on the measured temperature of the substrate. A Wheatstone bridge circuit is formed by the plurality of resistance thermometers,
14. The temperature calibration method according to claim 13, wherein, in the third step, the temperature of the heat treatment mechanism is adjusted so that the Wheatstone bridge circuit is in an equilibrium state. 15. The temperature calibration method according to claim 14, wherein, in the third step, the temperature of the heat treatment mechanism is adjusted so that a current value in the Wheatstone bridge circuit becomes a predetermined value. A plurality of the Wheatstone bridge circuits are formed,
The temperature calibration method according to claim 14 or 15, wherein, in the third step, the temperature of the heat treatment mechanism is adjusted so that current values in the plurality of Wheatstone bridge circuits become equal. The temperature calibration method according to claim 13, wherein the first step, the second step, and the third step are performed for each predetermined region of the substrate. The temperature calibration method according to claim 13, wherein the first step, the second step, and the third step are performed collectively on the entire substrate. The heat treatment mechanism is partitioned into a plurality of regions, and the temperature can be adjusted for each region,
The temperature calibration method according to claim 13, wherein, in the third step, the temperature of the heat treatment mechanism is adjusted for each region. The temperature calibration device is provided on the substrate, is electrically connected to the resistance temperature detector, and has a plurality of contact pads that the probe contacts when measuring the temperature of the substrate,
In the first step, the probe is brought into contact with a contact pad on a substrate placed on the heat treatment mechanism, and a resistance value of the resistance temperature detector is measured through the contact pad and the probe. The temperature calibration method according to any one of claims 11 to 19. 21. The temperature calibration method according to claim 20, wherein the contact pad is disposed at a position where the probe contacts the object to be inspected when inspecting the electrical characteristics of the object to be inspected. 21. The temperature calibration method according to claim 20, wherein the contact pad is disposed at a position where the resistance temperature detector is not affected by a temperature change when the probe contacts.

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