TWI372478B - Light-emitting device - Google Patents

Light-emitting device

Info

Publication number
TWI372478B
TWI372478B TW097100674A TW97100674A TWI372478B TW I372478 B TWI372478 B TW I372478B TW 097100674 A TW097100674 A TW 097100674A TW 97100674 A TW97100674 A TW 97100674A TW I372478 B TWI372478 B TW I372478B
Authority
TW
Taiwan
Prior art keywords
light
emitting device
emitting
Prior art date
Application number
TW097100674A
Other languages
English (en)
Other versions
TW200931681A (en
Inventor
Chia Liang Hsu
Chih Chiang Lu
Chien Fu Huang
Chun Yi Wu
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW097100674A priority Critical patent/TWI372478B/zh
Priority to US12/318,552 priority patent/US7973331B2/en
Publication of TW200931681A publication Critical patent/TW200931681A/zh
Priority to US13/174,183 priority patent/US8513699B2/en
Application granted granted Critical
Publication of TWI372478B publication Critical patent/TWI372478B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
TW097100674A 2008-01-08 2008-01-08 Light-emitting device TWI372478B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW097100674A TWI372478B (en) 2008-01-08 2008-01-08 Light-emitting device
US12/318,552 US7973331B2 (en) 2008-01-08 2008-12-31 Light-emitting device
US13/174,183 US8513699B2 (en) 2008-01-08 2011-06-30 Light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097100674A TWI372478B (en) 2008-01-08 2008-01-08 Light-emitting device

Publications (2)

Publication Number Publication Date
TW200931681A TW200931681A (en) 2009-07-16
TWI372478B true TWI372478B (en) 2012-09-11

Family

ID=40843858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097100674A TWI372478B (en) 2008-01-08 2008-01-08 Light-emitting device

Country Status (2)

Country Link
US (2) US7973331B2 (zh)
TW (1) TWI372478B (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI473246B (zh) * 2008-12-30 2015-02-11 Epistar Corp 發光二極體晶粒等級封裝
TWI480962B (zh) 2009-04-09 2015-04-11 Lextar Electronics Corp 發光二極體封裝以及發光二極體晶圓級封裝製程
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102009039890A1 (de) * 2009-09-03 2011-03-10 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Halbleiterkörper, einer Isolationsschicht und einer planaren Leitstruktur und Verfahren zu dessen Herstellung
DE102009047592B4 (de) * 2009-12-07 2019-06-19 Robert Bosch Gmbh Verfahren zur Herstellung eines Siliziumzwischenträgers
CN201725809U (zh) * 2010-03-04 2011-01-26 广州市海林电子科技发展有限公司 一种led器件
US8319247B2 (en) * 2010-03-25 2012-11-27 Koninklijke Philips Electronics N.V. Carrier for a light emitting device
KR101039879B1 (ko) * 2010-04-12 2011-06-09 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8901586B2 (en) * 2010-07-12 2014-12-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
KR101194844B1 (ko) * 2010-11-15 2012-10-25 삼성전자주식회사 발광소자 및 그 제조방법
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
DE102011011378A1 (de) * 2011-02-16 2012-08-16 Osram Opto Semiconductors Gmbh Trägersubstrat und Verfahren zur Herstellung von Halbleiterchips
TWI411136B (zh) * 2011-05-10 2013-10-01 Lextar Electronics Corp 半導體發光結構
CN102231419B (zh) * 2011-06-28 2016-01-13 广州市海林电子科技发展有限公司 Led构装方法及利用该方法构装的led装置
CN102637681B (zh) * 2012-04-28 2014-07-30 厦门市三安光电科技有限公司 垂直式发光器件及其制作方法
WO2013187723A1 (ko) 2012-06-14 2013-12-19 An Sang Jeong 반도체 발광소자 및 이의 제조 방법
CN104508841B (zh) * 2012-07-26 2018-05-22 安相贞 半导体发光器件
CN103840054A (zh) * 2012-11-20 2014-06-04 展晶科技(深圳)有限公司 发光二极管芯片
JP6398222B2 (ja) 2013-02-28 2018-10-03 日亜化学工業株式会社 発光装置およびその製造方法
CN103296173A (zh) * 2013-05-24 2013-09-11 大连德豪光电科技有限公司 具有侧面电极的led芯片及其封装结构
TWI527263B (zh) * 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
CN105299574A (zh) * 2014-08-01 2016-02-03 江苏泰源光电科技有限公司 一种蓝宝石衬底发光二级管太阳灯及其制作工艺
KR101540762B1 (ko) * 2014-12-04 2015-07-31 루미마이크로 주식회사 발광 소자 및 발광 소자 패키지
US11152533B1 (en) * 2018-09-21 2021-10-19 Facebook Technologies, Llc Etchant-accessible carrier substrate for display manufacture
WO2022188859A1 (zh) * 2021-03-12 2022-09-15 京东方科技集团股份有限公司 半导体装置及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
CN2434788Y (zh) 1999-11-09 2001-06-13 洲磊科技股份有限公司 发光二极管装置
TW543128B (en) * 2001-07-12 2003-07-21 Highlink Technology Corp Surface mounted and flip chip type LED package
EP2290715B1 (en) * 2002-08-01 2019-01-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same
US20060124941A1 (en) * 2004-12-13 2006-06-15 Lee Jae S Thin gallium nitride light emitting diode device
WO2006137711A1 (en) * 2005-06-22 2006-12-28 Seoul Opto-Device Co., Ltd. Light emitting device and method of manufacturing the same

Also Published As

Publication number Publication date
US20090173963A1 (en) 2009-07-09
TW200931681A (en) 2009-07-16
US20110254046A1 (en) 2011-10-20
US8513699B2 (en) 2013-08-20
US7973331B2 (en) 2011-07-05

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