TWI371701B - Mask data generation method, mask fabrication method, exposure method, device fabrication method, and storage medium - Google Patents

Mask data generation method, mask fabrication method, exposure method, device fabrication method, and storage medium

Info

Publication number
TWI371701B
TWI371701B TW097133456A TW97133456A TWI371701B TW I371701 B TWI371701 B TW I371701B TW 097133456 A TW097133456 A TW 097133456A TW 97133456 A TW97133456 A TW 97133456A TW I371701 B TWI371701 B TW I371701B
Authority
TW
Taiwan
Prior art keywords
mask
fabrication method
storage medium
data generation
exposure
Prior art date
Application number
TW097133456A
Other languages
English (en)
Chinese (zh)
Other versions
TW200931290A (en
Inventor
Miyoko Kawashima
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200931290A publication Critical patent/TW200931290A/zh
Application granted granted Critical
Publication of TWI371701B publication Critical patent/TWI371701B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
TW097133456A 2007-09-19 2008-09-01 Mask data generation method, mask fabrication method, exposure method, device fabrication method, and storage medium TWI371701B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007242911 2007-09-19
JP2008041489A JP2009093138A (ja) 2007-09-19 2008-02-22 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム

Publications (2)

Publication Number Publication Date
TW200931290A TW200931290A (en) 2009-07-16
TWI371701B true TWI371701B (en) 2012-09-01

Family

ID=40665153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097133456A TWI371701B (en) 2007-09-19 2008-09-01 Mask data generation method, mask fabrication method, exposure method, device fabrication method, and storage medium

Country Status (4)

Country Link
JP (2) JP2009093138A (enrdf_load_stackoverflow)
KR (1) KR101001219B1 (enrdf_load_stackoverflow)
DE (1) DE602008005223D1 (enrdf_load_stackoverflow)
TW (1) TWI371701B (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5665398B2 (ja) * 2009-08-10 2015-02-04 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5279745B2 (ja) * 2010-02-24 2013-09-04 株式会社東芝 マスクレイアウト作成方法、マスクレイアウト作成装置、リソグラフィ用マスクの製造方法、半導体装置の製造方法、およびコンピュータが実行可能なプログラム
JP5603685B2 (ja) * 2010-07-08 2014-10-08 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5627394B2 (ja) 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP6039910B2 (ja) 2012-03-15 2016-12-07 キヤノン株式会社 生成方法、プログラム及び情報処理装置
JP5677356B2 (ja) 2012-04-04 2015-02-25 キヤノン株式会社 マスクパターンの生成方法
JP5656905B2 (ja) 2012-04-06 2015-01-21 キヤノン株式会社 決定方法、プログラム及び情報処理装置
CN105051611B (zh) 2013-03-14 2017-04-12 Asml荷兰有限公司 图案形成装置、在衬底上生成标记的方法以及器件制造方法
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置
JP6307367B2 (ja) 2014-06-26 2018-04-04 株式会社ニューフレアテクノロジー マスク検査装置、マスク評価方法及びマスク評価システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3576791B2 (ja) * 1998-03-16 2004-10-13 株式会社東芝 マスクパターン設計方法
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
US7594199B2 (en) * 2003-01-14 2009-09-22 Asml Masktools B.V. Method of optical proximity correction design for contact hole mask
JP4101770B2 (ja) * 2003-01-14 2008-06-18 エーエスエムエル マスクツールズ ビー．ブイ． ディープ・サブ波長の光リソグラフィのためのレチクル・パターンに光近接フィーチャを提供する方法および装置
JP4563746B2 (ja) * 2003-06-30 2010-10-13 エーエスエムエル マスクツールズ ビー．ブイ． イメージ・フィールド・マップを利用して補助フィーチャを生成するための、方法、プログラム製品及び装置
TW200519526A (en) * 2003-09-05 2005-06-16 Asml Masktools Bv Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
SG125970A1 (en) * 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7620930B2 (en) * 2004-08-24 2009-11-17 Asml Masktools B.V. Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
JP5235322B2 (ja) * 2006-07-12 2013-07-10 キヤノン株式会社 原版データ作成方法及び原版データ作成プログラム

Also Published As

Publication number Publication date
JP5188644B2 (ja) 2013-04-24
JP2013011898A (ja) 2013-01-17
KR101001219B1 (ko) 2010-12-15
DE602008005223D1 (de) 2011-04-14
KR20090030216A (ko) 2009-03-24
TW200931290A (en) 2009-07-16
JP2009093138A (ja) 2009-04-30

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