TWI371082B - Method for manufacturing elemental device - Google Patents
Method for manufacturing elemental deviceInfo
- Publication number
- TWI371082B TWI371082B TW095137661A TW95137661A TWI371082B TW I371082 B TWI371082 B TW I371082B TW 095137661 A TW095137661 A TW 095137661A TW 95137661 A TW95137661 A TW 95137661A TW I371082 B TWI371082 B TW I371082B
- Authority
- TW
- Taiwan
- Prior art keywords
- elemental device
- manufacturing elemental
- manufacturing
- elemental
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005299666A JP2007109916A (ja) | 2005-10-14 | 2005-10-14 | 素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200725805A TW200725805A (en) | 2007-07-01 |
TWI371082B true TWI371082B (en) | 2012-08-21 |
Family
ID=37942866
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095137661A TWI371082B (en) | 2005-10-14 | 2006-10-13 | Method for manufacturing elemental device |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2007109916A (ko) |
KR (1) | KR20080063339A (ko) |
CN (1) | CN101283443A (ko) |
TW (1) | TWI371082B (ko) |
WO (1) | WO2007043645A1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102034832A (zh) * | 2009-09-28 | 2011-04-27 | 株式会社神户制钢所 | 薄膜晶体管基板及其制造方法以及显示装置 |
JP2011091352A (ja) * | 2009-09-28 | 2011-05-06 | Kobe Steel Ltd | 薄膜トランジスタ基板およびその製造方法並びに表示装置 |
CN110993694B (zh) * | 2019-10-22 | 2023-08-25 | 清华大学 | 自氧化方式制备亚10nm沟道的二维薄膜场效应晶体管 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102151A (ja) * | 1991-10-07 | 1993-04-23 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0618912A (ja) * | 1992-07-03 | 1994-01-28 | Fujitsu Ltd | 液晶表示装置及びその製造方法 |
JP2944336B2 (ja) * | 1992-11-02 | 1999-09-06 | シャープ株式会社 | 配線構造 |
JPH07169966A (ja) * | 1993-12-16 | 1995-07-04 | Sharp Corp | 電子部品及びその製造方法 |
JP4663829B2 (ja) * | 1998-03-31 | 2011-04-06 | 三菱電機株式会社 | 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置 |
JP2001023990A (ja) * | 1999-07-07 | 2001-01-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2003273109A (ja) * | 2002-03-14 | 2003-09-26 | Advanced Display Inc | Al配線用薄膜及びその製造方法並びにこれを用いた液晶表示装置 |
JP3940385B2 (ja) * | 2002-12-19 | 2007-07-04 | 株式会社神戸製鋼所 | 表示デバイスおよびその製法 |
JP2005062802A (ja) * | 2003-07-28 | 2005-03-10 | Advanced Display Inc | 薄膜トランジスタアレイ基板の製法 |
-
2005
- 2005-10-14 JP JP2005299666A patent/JP2007109916A/ja not_active Withdrawn
-
2006
- 2006-10-13 CN CN 200680037806 patent/CN101283443A/zh active Pending
- 2006-10-13 WO PCT/JP2006/320450 patent/WO2007043645A1/ja active Application Filing
- 2006-10-13 KR KR1020087009478A patent/KR20080063339A/ko not_active Application Discontinuation
- 2006-10-13 TW TW095137661A patent/TWI371082B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200725805A (en) | 2007-07-01 |
WO2007043645A1 (ja) | 2007-04-19 |
KR20080063339A (ko) | 2008-07-03 |
JP2007109916A (ja) | 2007-04-26 |
CN101283443A (zh) | 2008-10-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |