TWI370555B - Light-emitting diode and method for manufacturing the same - Google Patents

Light-emitting diode and method for manufacturing the same

Info

Publication number
TWI370555B
TWI370555B TW095150027A TW95150027A TWI370555B TW I370555 B TWI370555 B TW I370555B TW 095150027 A TW095150027 A TW 095150027A TW 95150027 A TW95150027 A TW 95150027A TW I370555 B TWI370555 B TW I370555B
Authority
TW
Taiwan
Prior art keywords
manufacturing
light
same
emitting diode
diode
Prior art date
Application number
TW095150027A
Other languages
English (en)
Other versions
TW200828626A (en
Inventor
Shih Chang Shei
Schang Jing Hon
Shihchen Wei
Juhyuh Su
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW095150027A priority Critical patent/TWI370555B/zh
Priority to US11/627,013 priority patent/US7675077B2/en
Priority to JP2007107011A priority patent/JP5055640B2/ja
Publication of TW200828626A publication Critical patent/TW200828626A/zh
Application granted granted Critical
Publication of TWI370555B publication Critical patent/TWI370555B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
TW095150027A 2006-12-29 2006-12-29 Light-emitting diode and method for manufacturing the same TWI370555B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095150027A TWI370555B (en) 2006-12-29 2006-12-29 Light-emitting diode and method for manufacturing the same
US11/627,013 US7675077B2 (en) 2006-12-29 2007-01-25 Light-emitting diode and method for manufacturing the same
JP2007107011A JP5055640B2 (ja) 2006-12-29 2007-04-16 発光ダイオード及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095150027A TWI370555B (en) 2006-12-29 2006-12-29 Light-emitting diode and method for manufacturing the same

Publications (2)

Publication Number Publication Date
TW200828626A TW200828626A (en) 2008-07-01
TWI370555B true TWI370555B (en) 2012-08-11

Family

ID=39582556

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095150027A TWI370555B (en) 2006-12-29 2006-12-29 Light-emitting diode and method for manufacturing the same

Country Status (3)

Country Link
US (1) US7675077B2 (zh)
JP (1) JP5055640B2 (zh)
TW (1) TWI370555B (zh)

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* Cited by examiner, † Cited by third party
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US8067687B2 (en) 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
US20060162768A1 (en) 2002-05-21 2006-07-27 Wanlass Mark W Low bandgap, monolithic, multi-bandgap, optoelectronic devices
US8772628B2 (en) 2004-12-30 2014-07-08 Alliance For Sustainable Energy, Llc High performance, high bandgap, lattice-mismatched, GaInP solar cells
TWI331411B (en) * 2006-12-29 2010-10-01 Epistar Corp High efficiency light-emitting diode and method for manufacturing the same
DE102007020291A1 (de) * 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Kontaktstruktur für einen derartigen Chip
KR101438812B1 (ko) * 2008-01-16 2014-09-05 엘지이노텍 주식회사 반사 구조물 및 이를 구비하는 발광 장치
KR101064082B1 (ko) * 2009-01-21 2011-09-08 엘지이노텍 주식회사 발광 소자
US20110073887A1 (en) * 2009-09-25 2011-03-31 Alliance For Sustainable Energy, Llc Optoelectronic devices having a direct-band-gap base and an indirect-band-gap emitter
US9136436B2 (en) 2010-02-09 2015-09-15 Epistar Corporation Optoelectronic device and the manufacturing method thereof
TWI762930B (zh) * 2010-02-09 2022-05-01 晶元光電股份有限公司 光電元件
US9006774B2 (en) 2010-02-09 2015-04-14 Epistar Corporation Optoelectronic device and the manufacturing method thereof
US10205059B2 (en) 2010-02-09 2019-02-12 Epistar Corporation Optoelectronic device and the manufacturing method thereof
US9640728B2 (en) 2010-02-09 2017-05-02 Epistar Corporation Optoelectronic device and the manufacturing method thereof
KR101182920B1 (ko) 2010-07-05 2012-09-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
EP2628183A4 (en) 2010-10-12 2014-04-02 Alliance Sustainable Energy III-V BAND WEAPONS IMPORTANT FOR OPTOELECTRONIC COMPONENTS OF HIGH EFFICIENCY
KR101791157B1 (ko) * 2011-03-25 2017-10-30 서울반도체 주식회사 발광 다이오드 패키지 및 조명 장치
KR101216940B1 (ko) 2011-03-25 2012-12-31 서울반도체 주식회사 발광 다이오드 칩
US9064980B2 (en) 2011-08-25 2015-06-23 Palo Alto Research Center Incorporated Devices having removed aluminum nitride sections
EP2600389B1 (en) * 2011-11-29 2020-01-15 IMEC vzw Method for bonding semiconductor substrates
CN102769079B (zh) * 2012-07-16 2015-02-25 南通玺运贸易有限公司 P型、n型半导体出光垂直传导发光二极管的制造方法
JP5398892B2 (ja) * 2012-09-14 2014-01-29 株式会社東芝 半導体発光素子
US9590131B2 (en) 2013-03-27 2017-03-07 Alliance For Sustainable Energy, Llc Systems and methods for advanced ultra-high-performance InP solar cells
JP2014204095A (ja) 2013-04-10 2014-10-27 信越半導体株式会社 半導体発光素子及びその製造方法
US10804438B2 (en) * 2017-10-18 2020-10-13 Rohm Co., Ltd. Semiconductor light-emitting device
CN112614921A (zh) * 2020-12-31 2021-04-06 深圳第三代半导体研究院 一种发光二极管及其制造方法

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US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
DE19629920B4 (de) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Licht-emittierende Diode mit einem nicht-absorbierenden verteilten Braggreflektor
US6015719A (en) * 1997-10-24 2000-01-18 Hewlett-Packard Company Transparent substrate light emitting diodes with directed light output
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
US6869820B2 (en) * 2002-01-30 2005-03-22 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
TW577178B (en) 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
US6716654B2 (en) * 2002-03-12 2004-04-06 Opto Tech Corporation Light-emitting diode with enhanced brightness and method for fabricating the same
JP4174581B2 (ja) * 2002-10-23 2008-11-05 信越半導体株式会社 発光素子の製造方法
JP4620340B2 (ja) * 2002-10-23 2011-01-26 信越半導体株式会社 発光素子及びその製造方法
JP4108439B2 (ja) * 2002-10-23 2008-06-25 信越半導体株式会社 発光素子の製造方法及び発光素子
TWI230473B (en) * 2003-03-10 2005-04-01 Sanken Electric Co Ltd Semiconductor light emitting device and manufacturing method thereof
JP3951300B2 (ja) * 2003-07-23 2007-08-01 信越半導体株式会社 発光素子及び発光素子の製造方法
FR2859312B1 (fr) * 2003-09-02 2006-02-17 Soitec Silicon On Insulator Scellement metallique multifonction
KR100586949B1 (ko) * 2004-01-19 2006-06-07 삼성전기주식회사 플립칩용 질화물 반도체 발광소자
KR100634503B1 (ko) * 2004-03-12 2006-10-16 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
JP2005277218A (ja) * 2004-03-25 2005-10-06 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
KR100576870B1 (ko) * 2004-08-11 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP4814503B2 (ja) * 2004-09-14 2011-11-16 スタンレー電気株式会社 半導体素子とその製造方法、及び電子部品ユニット
KR100631981B1 (ko) * 2005-04-07 2006-10-11 삼성전기주식회사 수직구조 ３족 질화물 발광 소자 및 그 제조 방법
US7335924B2 (en) * 2005-07-12 2008-02-26 Visual Photonics Epitaxy Co., Ltd. High-brightness light emitting diode having reflective layer
TWI331411B (en) * 2006-12-29 2010-10-01 Epistar Corp High efficiency light-emitting diode and method for manufacturing the same

Also Published As

Publication number Publication date
JP5055640B2 (ja) 2012-10-24
TW200828626A (en) 2008-07-01
JP2008166678A (ja) 2008-07-17
US20080157107A1 (en) 2008-07-03
US7675077B2 (en) 2010-03-09

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