TWI368917B - Auto precharge circuit sharing a write auto precharge signal generating unit - Google Patents

Auto precharge circuit sharing a write auto precharge signal generating unit

Info

Publication number
TWI368917B
TWI368917B TW097121074A TW97121074A TWI368917B TW I368917 B TWI368917 B TW I368917B TW 097121074 A TW097121074 A TW 097121074A TW 97121074 A TW97121074 A TW 97121074A TW I368917 B TWI368917 B TW I368917B
Authority
TW
Taiwan
Prior art keywords
auto precharge
generating unit
signal generating
write
circuit sharing
Prior art date
Application number
TW097121074A
Other languages
English (en)
Other versions
TW200908004A (en
Inventor
Han Suk Ko
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200908004A publication Critical patent/TW200908004A/zh
Application granted granted Critical
Publication of TWI368917B publication Critical patent/TWI368917B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/18Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
TW097121074A 2007-08-14 2008-06-06 Auto precharge circuit sharing a write auto precharge signal generating unit TWI368917B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070081811A KR100911185B1 (ko) 2007-08-14 2007-08-14 라이트 오토 프리차지 신호 발생부를 공유하는 오토프리차지 회로

Publications (2)

Publication Number Publication Date
TW200908004A TW200908004A (en) 2009-02-16
TWI368917B true TWI368917B (en) 2012-07-21

Family

ID=40362832

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097121074A TWI368917B (en) 2007-08-14 2008-06-06 Auto precharge circuit sharing a write auto precharge signal generating unit

Country Status (3)

Country Link
US (1) US7710804B2 (zh)
KR (1) KR100911185B1 (zh)
TW (1) TWI368917B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100868251B1 (ko) * 2007-03-22 2008-11-12 주식회사 하이닉스반도체 반도체 메모리장치
KR100924017B1 (ko) * 2008-06-30 2009-10-28 주식회사 하이닉스반도체 오토 프리차지 회로 및 오토 프리차지 방법
TWI423256B (zh) * 2008-10-29 2014-01-11 Etron Technology Inc 資料感測裝置與方法
KR101097463B1 (ko) * 2009-12-11 2011-12-26 주식회사 하이닉스반도체 반도체 메모리 소자 및 그 구동방법
KR101198139B1 (ko) 2010-11-23 2012-11-12 에스케이하이닉스 주식회사 반도체 메모리 장치의 프리차지 신호 발생 회로
US11676651B2 (en) * 2019-10-31 2023-06-13 SK Hynix Inc. Arithmetic devices conducting auto-load operation
US11915125B2 (en) 2019-10-31 2024-02-27 SK Hynix Inc. Arithmetic devices for neural network
US11386947B2 (en) 2019-10-31 2022-07-12 SK Hynix Inc. Arithmetic devices conducting auto-load operation for writing the activation functions

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070036598A (ko) * 2005-09-29 2007-04-03 주식회사 하이닉스반도체 프리차지 제어 장치
US7336551B2 (en) * 2005-11-30 2008-02-26 Intel Corporation Semiconductor memory devices and systems, and methods of using having reduced timers and registers

Also Published As

Publication number Publication date
US20090046527A1 (en) 2009-02-19
US7710804B2 (en) 2010-05-04
TW200908004A (en) 2009-02-16
KR100911185B1 (ko) 2009-08-06
KR20090017222A (ko) 2009-02-18

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees